CN104609416A - Carrier used for graphene growth and method for preparing graphene - Google Patents
Carrier used for graphene growth and method for preparing graphene Download PDFInfo
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- CN104609416A CN104609416A CN201510083393.1A CN201510083393A CN104609416A CN 104609416 A CN104609416 A CN 104609416A CN 201510083393 A CN201510083393 A CN 201510083393A CN 104609416 A CN104609416 A CN 104609416A
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Abstract
The invention relates to a carrier used for graphene growth and a method for preparing graphene. The carrier comprises a cubic framework, wherein a bottom baffle is arranged on the lower end of the cubic framework, inner sides of two opposite sides of the cubic framework are respectively provided with a side baffle, two faces, facing each other, of the two side baffles are respectively provided with a plurality of uniformly distributed side baffle grooves, the side baffle grooves on the two side baffles are in one-to-one correspondence respectively, top edges of the two sides, provided with the two side baffles, of the cubic framework are respectively provided with a plurality of fixing grooves, the top end of the cubic framework is provided with a plurality of crosswise quartz pushrods, a carbon-carbon composite material thin slab is arranged between every two adjacent crosswise quartz pushrods, and two sides of each carbon-carbon composite material thin slab are respectively arranged in the side baffle grooves of the two side baffles. A growing substrate is laid on each carbon-carbon composite material thin slab, longitudinal quartz pushrods sequentially penetrate through the carbon-carbon composite material thin slabs and the growing substrates, the growing substrates are placed on the carrier and are effectively prevented from adhesion, and the processing productivity of a furnace is enhanced.
Description
Technical field
The present invention relates to technical field of graphene preparation, particularly relate to a kind of carrier for graphene growth and prepare the method for Graphene.
Background technology
In graphene film industrialization, the furnace tube device of graphene growth many employings semiconductor industry, some growth substrate causes soft without hardness because thickness is thin, the carrying carrier of semiconductor industry furnace tube device cannot carry, and under high temperature, some growth substrate can soften the adhesion easily caused between some growth substrate and some growth substrate.The carrier of semiconductor industry boiler tube is all adopt to lift patten's design, and depend on hardness and the thickness of silicon chip self, silicon wafer thickness is 2mm to 6mm, and whole silicon chip quality is hard, can not be curling.The tinsel thickness of graphene growth is between 25um to 80um, tinsel hardness is relatively little, soft, easy rolling, boiler tube carrier is made to support tinsel, easily there is inter-adhesive phenomenon in tinsel growth substrate, affect the preparation of Graphene, cause the waste of material simultaneously in the process preparing Graphene.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of tinsel growth substrate of avoiding and in the process preparing Graphene, occurs the carrier for graphene growth of adhesion phenomenon and prepare the method for Graphene.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of carrier for graphene growth, comprise cube frame, the bottom of described cube frame is provided with bottom baffle, the inner side of two sides that described cube frame is relative is equipped with side shield, two described side shields mutually towards one side on be equipped with the side block board slot of some even arrangements, described side block board slot on two described side shields one_to_one corresponding respectively, the top margin being provided with two sides of described side shield at described cube frame is equipped with some pickup grooves, the top of described cube frame is provided with some horizontal quartz pushrods, the two ends of described horizontal quartz pushrod are located in two described pickup grooves not on ipsilateral top margin respectively, carbon-carbon composite thin plate is provided with between adjacent two described horizontal quartz pushrods, the dual-side of described carbon-carbon composite thin plate is located in the side block board slot of two side shields respectively.
The invention has the beneficial effects as follows: growth substrate is laid on carbon-carbon composite thin plate, by longitudinal quartz pushrod successively through after carbon-carbon composite thin plate and growth substrate, growth substrate is placed on carrier, described longitudinal quartz pushrod is made to be placed in the locating slot of described horizontal quartz pushrod, two sides of described growth substrate are placed in the described side block board slot on two described side shields respectively, by cell wall, next door is carried out to growth substrate, effectively prevent growth substrate adhesion, save space and weight, promote body of heater processing production capacity, without other instruments, carrier overall weight can be alleviated, pickup groove be arrange to position horizontal quartz pushrod well, horizontal quartz pushrod is avoided to move on the top of cube frame.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the upper surface of described carbon-carbon composite thin plate is provided with some horizontally disposed longitudinal quartz pushrods, and described longitudinal quartz pushrod is vertical with described horizontal quartz pushrod to be arranged.
Further, described side block board slot is the bar-shaped trough be obliquely installed.
Further, described side shield angle of groove inclination degree is 15 degree to 25 degree.
The beneficial effect of above-mentioned further scheme is adopted to be: the isolation that described side block board slot and described bottom baffle groove adopt the bar-shaped trough vertically arranging or be obliquely installed all can realize growth substrate.
Further, described carbon-carbon composite thin plate is evenly provided with some locating slots, described longitudinal quartz pushrod is placed in the locating slot of described carbon-carbon composite thin plate.
The beneficial effect of above-mentioned further scheme is adopted to be: longitudinal quartz pushrod can be avoided to move on horizontal quartz pushrod by locating slot.
Further, the separation between adjacent two described side block board slots is 4.5mm to 6.0mm.
Further, the groove depth of described side block board slot is 25mm to 55mm.
Further, the material of described cube frame is quartz.
Prepare a method for Graphene, the method prepares Graphene by using above-mentioned carrier, comprises the following steps:
Step one, punches in the position that the top of the growth substrate cut is corresponding with described longitudinal quartz pushrod;
Step 2, described growth substrate is laid on described carbon-carbon composite thin plate, described longitudinal quartz pushrod is placed on described carbon-carbon composite thin plate, in the same described side block board slot that the both sides of described growth substrate are placed on two of described carbon-carbon composite thin plate on two described side shields respectively after the fixed orifices of described longitudinal quartz pushrod through the top of described growth substrate;
Step 3, is positioned over the carrier being mounted with growth substrate in graphene growth device, makes carrier be provided with one of side shield facing to the inlet mouth of graphene growth device, adopts chemical vapor deposition graphene film;
Step 4, after graphene growth completes, takes out carrier, described growth substrate is taken off from carrier, must grow the growth substrate having Graphene from graphene growth device.
The beneficial effect of above-mentioned further scheme is adopted to be: by longitudinal quartz pushrod through after growth substrate, growth substrate is placed on carrier, in the described pickup groove that the two ends of described horizontal quartz pushrod are located on the top margin of two different sides respectively, longitudinal quartz pushrod is placed on described horizontal quartz pushrod, two sides of described growth substrate are placed in the described side block board slot on two described side shields respectively, by cell wall, next door is carried out to growth substrate, effectively prevent growth substrate from sticking together in the process preparing Graphene, save space and weight, promote body of heater processing production capacity, without other instruments, carrier overall weight can be alleviated.
Further, in growth substrate described in described step one, the quantity in hole is two or more, and identical with the quantity of described longitudinal quartz pushrod.
The beneficial effect of above-mentioned further scheme is adopted to be: can be effectively fixing to growth substrate by two or more holes.
Further, the top of adjacent in described step 2 described growth substrate is isolated by described horizontal quartz pushrod.
Further, the described growth substrate in described step one is Copper Foil.
Further, the aperture in the hole in growth substrate described in described step one is 3mm to 7mm.
Further, the pitch-row in the hole in growth substrate described in described step one is 60mm to 80mm.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of carbon-carbon composite thin plate of the present invention;
Fig. 3 is the structural representation of growth substrate of the present invention;
Fig. 4 is that the present invention uses schematic diagram;
In accompanying drawing, the list of parts representated by each label is as follows:
1, cube frame, 2, bottom baffle, 3, side shield, 4, side block board slot, 5, pickup groove, 6, horizontal quartz pushrod, 7, carbon-carbon composite thin plate, 8, locating slot, 9, fixed orifices, 10, longitudinal quartz pushrod, 11, growth substrate.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As Fig. 1, Fig. 2, shown in Fig. 3, the present invention includes cube frame 1, the bottom of described cube frame 1 is provided with bottom baffle 2, the inner side of two sides that described cube frame 1 is relative is equipped with side shield 3, two described side shields 3 mutually towards one side on be equipped with some side block board slots 4 of evenly arrangement, described side block board slot 4 on two described side shields 3 one_to_one corresponding respectively, the top margin being provided with two sides of described side shield 3 at described cube frame 1 is equipped with some pickup grooves 5, the top of described cube frame 1 is provided with horizontal quartz pushrod 6, the two ends of described horizontal quartz pushrod 6 are located in two described pickup grooves 5 not on ipsilateral top margin respectively, carbon-carbon composite thin plate 7 is provided with between adjacent two described horizontal quartz pushrods 6, the dual-side of described carbon-carbon composite thin plate 7 is located in the side block board slot 4 of two side shields 3 respectively.
The upper surface of described horizontal quartz pushrod 6 is provided with some horizontally disposed longitudinal quartz pushrods 10, described longitudinal quartz pushrod 10 is vertical with described horizontal quartz pushrod 6 to be arranged, the top of described carbon-carbon composite thin plate is equipped with the fixed orifices corresponding with described longitudinal quartz pushrod 10, and described longitudinal quartz pushrod 10 is through described fixed orifices.The bar-shaped trough of described side block board slot 4 for being obliquely installed.The angle of inclination of described side block board slot 4 is 15 degree to 25 degree.Described carbon-carbon composite thin plate 7 is evenly provided with some locating slots 8, and described longitudinal quartz pushrod 10 is placed in the locating slot 8 of described carbon-carbon composite thin plate 7.Separation between adjacent two described side block board slots 4 is 4.5mm to 6.0mm.The groove depth of described side block board slot 4 is 25mm to 55mm.
Prepare a method for Graphene, the method prepares Graphene by using above-mentioned carrier, comprises the following steps:
Step one, fixed orifices 9 is beaten in the position that the top of the growth substrate 11 cut is corresponding with described longitudinal quartz pushrod 10;
Step 2, described growth substrate 11 is laid on described carbon-carbon composite thin plate 7, after the fixed orifices 9 of described longitudinal quartz pushrod 10 through the top of described growth substrate 11, described longitudinal quartz pushrod 10 is placed on described carbon-carbon composite thin plate 7, in the same described side block board slot 4 that the both sides of described growth substrate 11 are placed on two of described carbon-carbon composite thin plate 7 on two described side shields 3 respectively, as shown in Figure 4;
Step 3, is positioned over the carrier being mounted with growth substrate 11 in graphene growth device, makes carrier be provided with one of side shield 3 facing to the inlet mouth of graphene growth device, adopts chemical vapor deposition graphene film;
Step 4, after graphene growth completes, takes out carrier from graphene growth device, described growth substrate 11 is taken off from carrier, must grow the growth substrate 11 having Graphene.
The top of described growth substrate 11 adjacent in described step 2 is isolated by described horizontal quartz pushrod 6.Growth substrate 11 described in described step one is beaten the quantity of fixed orifices 9 for two or more, and identical with the quantity of described longitudinal quartz pushrod 10.Described growth substrate 11 in described step one is Copper Foil, and fixed orifices 9 footpath of the fixed orifices 9 in growth substrate 11 described in described step one is 3mm to 7mm, and the fixed orifices 9 of the fixed orifices 9 in growth substrate 11 described in described step one is apart from being 60mm to 80mm.
Growth substrate 11 is laid on carbon-carbon composite thin plate 7 by the present invention, by longitudinal quartz pushrod 10 successively through after carbon-carbon composite thin plate 7 and growth substrate 11, growth substrate 11 is placed on carrier, described longitudinal quartz pushrod 10 is made to be placed in the described locating slot 8 of described horizontal quartz pushrod 6, two sides of described growth substrate 11 are placed in the described side block board slot 4 on two described side shields 3 respectively, by cell wall, next door is carried out to growth substrate 11, effectively prevent growth substrate 11 adhesion, save space and weight, promote body of heater processing production capacity, without other instruments, carrier overall weight can be alleviated, pickup groove 5 be arrange to position horizontal quartz pushrod 6 well, horizontal quartz pushrod 6 is avoided to move on the top of cube frame 1.Described side block board slot 4 adopts the equal isolation that can realize growth substrate 11 of the bar-shaped trough be obliquely installed.Longitudinal quartz pushrod 10 can be avoided to move on horizontal quartz pushrod 6 by locating slot 8.Can be effectively fixing to growth substrate 11 by two or more fixed orificess 9.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the carrier for graphene growth, it is characterized in that, comprise cube frame (1), the bottom of described cube frame (1) is provided with bottom baffle (2), the inner side of two sides that described cube frame (1) is relative is equipped with side shield (3), two described side shields (3) mutually towards one side on be equipped with the side block board slot (4) of some even arrangements, described side block board slot (4) on two described side shields (3) one_to_one corresponding respectively, the top margin being provided with two sides of described side shield (3) at described cube frame (1) is equipped with some pickup grooves (5), the top of described cube frame (1) is provided with some horizontal quartz pushrods (6), the two ends of described horizontal quartz pushrod (6) are located in two described pickup grooves (5) not on ipsilateral top margin respectively, carbon-carbon composite thin plate (7) is provided with between adjacent two described horizontal quartz pushrods (6), the dual-side of described carbon-carbon composite thin plate is located in the side block board slot (4) of two side shields (3) respectively.
2. a kind of carrier for graphene growth according to claim 1, it is characterized in that, the upper surface of described carbon-carbon composite thin plate (7) is provided with some horizontally disposed longitudinal quartz pushrods (10), and described longitudinal quartz pushrod (10) is vertical with described horizontal quartz pushrod (6) to be arranged.
3. a kind of carrier for graphene growth according to claim 2, is characterized in that, the bar-shaped trough of described side block board slot (4) for being obliquely installed.
4. a kind of carrier for graphene growth according to claim 3, is characterized in that, the angle of inclination of described side block board slot (4) is 15 degree to 25 degree.
5. a kind of carrier for graphene growth according to Claims 2 or 3, is characterized in that, the separation between adjacent two described side block board slots is 4.5mm to 6.0mm.
6. a kind of carrier for graphene growth according to Claims 2 or 3, its feature exists, and the groove depth of described side block board slot is 25mm to 55mm.
7. a kind of carrier for graphene growth according to claim 1 and 2, it is characterized in that, described carbon-carbon composite thin plate (7) is evenly provided with some locating slots (8), and described longitudinal quartz pushrod (10) is placed in the described locating slot (8) of described carbon-carbon composite thin plate (7).
8. prepare a method for Graphene, it is characterized in that, the method prepares Graphene by using the carrier described in any one of claim 1-7, comprises the following steps:
Step one, fixed orifices (9) is beaten in the position that the top of the growth substrate cut (11) is corresponding with described longitudinal quartz pushrod (10);
Step 2, described growth substrate (11) is laid on described carbon-carbon composite thin plate (7), described longitudinal quartz pushrod (10) is placed on described carbon-carbon composite thin plate (7) through after the fixed orifices (9) on the top of described growth substrate (11) by described longitudinal quartz pushrod (10), in the same described side block board slot (4) that the both sides of described growth substrate (11) are placed on two of described carbon-carbon composite thin plate (7) on two described side shields (3) respectively;
Step 3, the carrier being mounted with growth substrate (11) is positioned in graphene growth device, make carrier be provided with one of side shield (3) facing to the inlet mouth of graphene growth device, adopt chemical vapor deposition graphene film;
Step 4, after graphene growth completes, takes out carrier from graphene growth device, described growth substrate (11) is taken off from carrier, must grow the growth substrate (11) having Graphene.
9. a kind of carrier for graphene growth according to claim 8, it is characterized in that, the quantity in the upper hole of growth substrate described in described step one (11) is two or more, and identical with the quantity of described longitudinal quartz pushrod (10).
10. a kind of carrier for graphene growth according to claim 8, it is characterized in that, the top of described growth substrate (11) adjacent in described step 2 is isolated by described horizontal quartz pushrod (6) and described carbon-carbon composite thin plate (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510083393.1A CN104609416B (en) | 2015-02-15 | 2015-02-15 | Carrier used for graphene growth and method for preparing graphene |
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| CN201510083393.1A CN104609416B (en) | 2015-02-15 | 2015-02-15 | Carrier used for graphene growth and method for preparing graphene |
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| CN104609416A true CN104609416A (en) | 2015-05-13 |
| CN104609416B CN104609416B (en) | 2017-01-18 |
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Cited By (2)
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| CN105668559A (en) * | 2016-01-29 | 2016-06-15 | 中国科学院重庆绿色智能技术研究院 | Method for preparing graphene films on multiple substrates in batch |
| KR102575637B1 (en) * | 2022-06-29 | 2023-09-06 | (주)테라시스 | Graphite sheet and manufacturing method thereof |
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| KR102575637B1 (en) * | 2022-06-29 | 2023-09-06 | (주)테라시스 | Graphite sheet and manufacturing method thereof |
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| CN104609416B (en) | 2017-01-18 |
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