CN102505112A - Device and method for sticking graphene film - Google Patents
Device and method for sticking graphene film Download PDFInfo
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- CN102505112A CN102505112A CN2011104430560A CN201110443056A CN102505112A CN 102505112 A CN102505112 A CN 102505112A CN 2011104430560 A CN2011104430560 A CN 2011104430560A CN 201110443056 A CN201110443056 A CN 201110443056A CN 102505112 A CN102505112 A CN 102505112A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000007788 liquid Substances 0.000 claims abstract description 39
- 210000005056 cell body Anatomy 0.000 claims description 57
- 239000012530 fluid Substances 0.000 claims description 25
- 230000001105 regulatory effect Effects 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 abstract 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 14
- 239000004926 polymethyl methacrylate Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 239000011889 copper foil Substances 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 4
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009997 thermal pre-treatment Methods 0.000 description 2
- 230000005492 condensed matter physics Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011104430560A CN102505112B (en) | 2011-12-26 | 2011-12-26 | Device and method for sticking graphene film |
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CN2011104430560A CN102505112B (en) | 2011-12-26 | 2011-12-26 | Device and method for sticking graphene film |
Publications (2)
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CN102505112A true CN102505112A (en) | 2012-06-20 |
CN102505112B CN102505112B (en) | 2013-12-11 |
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CN2011104430560A Active CN102505112B (en) | 2011-12-26 | 2011-12-26 | Device and method for sticking graphene film |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104029431A (en) * | 2014-06-23 | 2014-09-10 | 南开大学 | Preparation method of twist angle-controllable multilayer graphene structure |
CN104485385A (en) * | 2014-11-21 | 2015-04-01 | 广西智通节能环保科技有限公司 | Preparation method for transparent graphene membrane electrode of solar cell |
CN104485422A (en) * | 2014-11-21 | 2015-04-01 | 广西智通节能环保科技有限公司 | Single-layer solar battery and preparing method of single-layer solar battery |
CN104609416A (en) * | 2015-02-15 | 2015-05-13 | 重庆墨希科技有限公司 | Carrier used for graphene growth and method for preparing graphene |
CN106927068A (en) * | 2017-01-13 | 2017-07-07 | 北京卫星制造厂 | A kind of Graphene film Rapid Implementation device and process |
TWI600611B (en) * | 2014-01-29 | 2017-10-01 | 奈創國際控股有限公司 | Apparatus and method for formatting graphene film, and graphene film structure |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0556517A1 (en) * | 1991-12-26 | 1993-08-25 | General Electric Company | Diamond films |
CN101844935A (en) * | 2010-05-31 | 2010-09-29 | 江西赛维Ldk太阳能高科技有限公司 | Crucible coating layer for polycrystal silicon or single crystal silicon and preparation method thereof |
CN101894679A (en) * | 2009-05-20 | 2010-11-24 | 中国科学院金属研究所 | Method for preparing graphene-based flexible super capacitor and electrode material thereof |
JP2011171615A (en) * | 2010-02-22 | 2011-09-01 | Oki Semiconductor Co Ltd | Method of manufacturing semiconductor device |
CN202558930U (en) * | 2011-12-26 | 2012-11-28 | 宋勃 | Device for sticking thin film and (on) substrate |
-
2011
- 2011-12-26 CN CN2011104430560A patent/CN102505112B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0556517A1 (en) * | 1991-12-26 | 1993-08-25 | General Electric Company | Diamond films |
CN101894679A (en) * | 2009-05-20 | 2010-11-24 | 中国科学院金属研究所 | Method for preparing graphene-based flexible super capacitor and electrode material thereof |
JP2011171615A (en) * | 2010-02-22 | 2011-09-01 | Oki Semiconductor Co Ltd | Method of manufacturing semiconductor device |
CN101844935A (en) * | 2010-05-31 | 2010-09-29 | 江西赛维Ldk太阳能高科技有限公司 | Crucible coating layer for polycrystal silicon or single crystal silicon and preparation method thereof |
CN202558930U (en) * | 2011-12-26 | 2012-11-28 | 宋勃 | Device for sticking thin film and (on) substrate |
Non-Patent Citations (2)
Title |
---|
《Acta Physico-Chimica Sinica》 20111130 YANG Xiao-Wei.et.al "Improved Graphene Film by Reducing Restacking for Lithium Ion Battery Applications" Page2583-2586 1-10 第27卷, 第11期 * |
YANG XIAO-WEI.ET.AL: ""Improved Graphene Film by Reducing Restacking for Lithium Ion Battery Applications"", 《ACTA PHYSICO-CHIMICA SINICA》 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI600611B (en) * | 2014-01-29 | 2017-10-01 | 奈創國際控股有限公司 | Apparatus and method for formatting graphene film, and graphene film structure |
CN104029431A (en) * | 2014-06-23 | 2014-09-10 | 南开大学 | Preparation method of twist angle-controllable multilayer graphene structure |
CN104029431B (en) * | 2014-06-23 | 2018-06-19 | 南开大学 | The controllable multi-layer graphene structure preparation method of distortion angle |
CN104485385A (en) * | 2014-11-21 | 2015-04-01 | 广西智通节能环保科技有限公司 | Preparation method for transparent graphene membrane electrode of solar cell |
CN104485422A (en) * | 2014-11-21 | 2015-04-01 | 广西智通节能环保科技有限公司 | Single-layer solar battery and preparing method of single-layer solar battery |
CN104609416A (en) * | 2015-02-15 | 2015-05-13 | 重庆墨希科技有限公司 | Carrier used for graphene growth and method for preparing graphene |
CN104609416B (en) * | 2015-02-15 | 2017-01-18 | 重庆墨希科技有限公司 | Carrier used for graphene growth and method for preparing graphene |
CN106927068A (en) * | 2017-01-13 | 2017-07-07 | 北京卫星制造厂 | A kind of Graphene film Rapid Implementation device and process |
CN106927068B (en) * | 2017-01-13 | 2019-06-18 | 北京卫星制造厂 | A kind of graphene film Rapid Implementation device and process |
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Publication number | Publication date |
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CN102505112B (en) | 2013-12-11 |
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Address after: 213149 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Patentee after: 2D CARBON (CHANGZHOU) TECH Inc.,Ltd. Address before: 213149 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Patentee before: 2D CARBON (CHANGZHOU) TECH Co.,Ltd. |
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