CN203513283U - Bracket for preparing graphene - Google Patents
Bracket for preparing graphene Download PDFInfo
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- CN203513283U CN203513283U CN201320561051.2U CN201320561051U CN203513283U CN 203513283 U CN203513283 U CN 203513283U CN 201320561051 U CN201320561051 U CN 201320561051U CN 203513283 U CN203513283 U CN 203513283U
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- rod
- fagging
- graphene
- baffle plate
- substrate
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Abstract
The utility model relates to a bracket for preparing graphene. The bracket is characterized by comprising a plurality of base rods which are arranged in parallel or symmetrically; a plurality of support plates which are evenly arranged are fixed on the base rods; a baffle is arranged at each of the two ends of the base rods; the support plates are arranged between the baffles; reinforced rods are fixed on the baffles and the two sides of the support plates; the reinforced rods are arranged at 1/5-1/2 height positons of the baffles; the bottom surfaces of the base rods are in circular arc shapes, and the bottoms at the two ends of the base rods are in reversed circular bead shapes; the inclined angles between the support plates and the base rods are 30-90 degrees. The bracket for preparing the graphene is simple in structure, convenient to manufacture, lower in manufacturing cost and convenient to operate, the problem that a metal base is easily folded in the existing technology can be solved, the product quality is greatly improved, and the economic benefit is improved.
Description
Technical field
The utility model relates to Graphene field, especially a kind of Graphene support of preparing.
Background technology
Graphene is that Novoselov and the Geim of 2004 Nian Man Chester universities finds, it has the excellent properties of the each side such as good physics, chemistry, electricity, mechanics, at numerous areas such as new forms of energy, novel material and electronic devices and components, has a wide range of applications.Graphene is current preparation method mainly contain: (1) microcomputer stripping method, this method can only the few Graphene of production quantity, mainly rests on laboratory level.(2) epitaxial method, this method main drawback its large-scale application that has been cost is higher and silicon chip is less limitation of size.(3) oxidation reduction process, the Graphene defect that the method is produced is more.(4) solvent stripping method, the method is main is that shortcoming is low its commercial applications that limits of production efficiency.(5) chemical Vapor deposition process (CVD), the Graphene crystalline structure that this method is produced is relatively complete, and quality is higher, can be used for transparency electrode, Flat panel touch display screen etc.The principle of chemical Vapor deposition process is that carbon containing precursor and catalytic specie are imported in a reaction chamber chemical reaction occurs with gaseous form, and in substrate, deposits a kind of material.Base material prepared by Graphene is generally various metals, comprises Copper Foil, nickel foil, platinum foil etc., wherein due to the Graphene quality of Copper Foil low price and growth better and the number of plies more easy to control be the only choosing of Graphene large-scale industrial production.
Conventionally adopt Copper Foil as substrate grown, to prepare in the process of Graphene, the general inside that adopts curling mode to be positioned over circular silica tube of Copper Foil, the shortcoming of this placement at present is mainly: 1) circular silica tube is subject to the restriction of equipment heating space, conventionally the Graphene comparatively small amt of preparation, can not be satisfied with the user demand of industrial mass; 2) Copper Foil intensity under Graphene depositing temperature is very low, extremely soft, when area is larger, can issues and give birth to the distortion of hanging down at Gravitative Loads, and subsequent technique is impacted; 3), when Copper Foil is positioned in this class arc of silica tube, after Graphene has deposited, Copper Foil takes out to set level process from arc and also can produce micro-wrinkle.
Utility model content
The technical problems to be solved in the utility model is: for the special stand of small area Graphene mass industrialized production in a kind of can realization is provided, simple in structure, easy to process, the Graphene of small area in growth that can be a large amount of, production efficiency is high, and quality is good, and cost is lower.
The utility model solves the technical scheme that its technical problem adopts: a kind of Graphene support of preparing, comprise some substrate rods, parallel or symmetric offset spread between described substrate rod, on described substrate rod, be fixed with some evenly distributed faggings, described fagging is between baffle plate, and described baffle plate and fagging both sides are fixed with and strengthen rod, described enhancing rod is positioned at baffle plate 1/5-1/2 At The Height, substrate rod bottom surface is circular arc, and bottom, two ends rounding, is the setting of 30-90 degree between described fagging and substrate rod.During use, metal base can be placed on fagging surface growth, the smooth corrugationless of metal substrate surface after growth, and quality product is better.
For the ease of picking and placeing, described substrate rod two ends are respectively equipped with baffle plate, and described fagging is between baffle plate.Described baffle plate and fagging both sides are fixed with and strengthen rod, and described enhancing rod is positioned at baffle plate 1/5-1/2 At The Height, to improve the Rigidity and strength of this support.The excellent diameter of described enhancing is 5-15mm.
Described substrate rod, baffle plate, enhancing rod and fagging material are a kind of in quartz, corundum, graphite, silicon carbide, silicon nitride, and the support intensity that such material makes is high, easy to make.
In order to improve the steadiness of this support, described substrate rod is two or two above parallel or symmetric offset spread, and baffle plate and fagging are fixed on substrate rod, and the fixing rod that strengthens in baffle plate and fagging both sides is to improve stability.
Described substrate rod diameter is 10-30mm, and substrate rod bottom surface is circular arc, and bottom, two ends rounding, is convenient at quartzy in-pipe.
Placement growth substrate for as far as possible many, is arranged in parallel between described fagging, and the vertical spacing between fagging is 10-30mm, is the setting of 30-90 degree between fagging and substrate rod.
Described fagging welds or assigns on substrate rod by slot, easy installation and removal, and fixation, is convenient to processing.
Described fagging thickness is 0.1-2mm.
The beneficial effects of the utility model are: it is simple with supporting structure that the utility model is prepared Graphene, easy to make, cost of manufacture is lower, and convenient operation, the large batch of suitability for industrialized production of Graphene of small area in can realizing, solve the lower problem of current Graphene output, metal base is placed in fagging surface growth, and the smooth corrugationless of metal substrate surface has solved the problem of the easy fold of metal base in current technique, the quality that has greatly improved product, has improved economic benefit.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is further illustrated.
Fig. 1 is that the utility model is prepared the perspective view of a preferred embodiment of support for Graphene;
Fig. 2 is the left view of Fig. 1;
In figure: 1. fagging, 2. baffle plate, 3. strengthens rod, 4. substrate rod.
Embodiment
By reference to the accompanying drawings the utility model is described in further detail now.These accompanying drawings are the schematic diagram of simplification, basic structure of the present utility model is only described in a schematic way, so it only show the formation relevant with the utility model.
As shown in Figure 1 and Figure 2, a kind of Graphene support of preparing, comprises some substrate rods 4, and parallel or symmetric offset spread between described substrate rod 4 is fixed with some evenly distributed faggings 1 on described substrate rod 4.During use, metal base can be placed on fagging 1 surface growth, the smooth corrugationless of metal substrate surface after growth, and quality product is better.
For the ease of picking and placeing, described substrate rod 4 two ends are respectively equipped with baffle plate 2, and described fagging 1 is between baffle plate 2.Described baffle plate 2 and fagging 1 both sides are fixed with and strengthen rod 3, and described enhancing rod is positioned at baffle plate 1/5-1/2 At The Height, strengthens excellent 3 diameters and is preferably 5-15mm.
Described substrate rod 4, baffle plate 2, to strengthen rod 3 and fagging 1 material be a kind of in quartz, corundum, graphite, silicon carbide, silicon nitride, and the support intensity that such material makes is high, easy to make.
In order to improve the steadiness of this support, described substrate rod 4 is two or two above parallel or symmetric offset spread, is convenient to fixed dam 2 and fagging 1.Substrate rod 4 diameters are 10-30mm, and substrate rod 4 bottom surfaces, two ends are circular arc, bottom, two ends rounding, and intensity is high, is convenient to shift carrying.
In order to improve better the growth result of metal substrate surface, between described fagging 1, be arranged in parallel, the vertical spacing that fagging is 1 is 10-30mm, is the setting of 30-90 degree between fagging 1 and substrate rod 4.Described fagging 1 thickness is 0.1-2mm, and the quantity of fagging 1 is preferably 30-60 sheet, weld or assign on substrate rod 4 by slot, and easy installation and removal, fixation, is convenient to processing.
Compared with prior art, it is simple with supporting structure that the utility model is prepared Graphene, easy to make, and cost of manufacture is lower, and convenient operation, the large batch of suitability for industrialized production of the Graphene of small area in can realizing, solves the lower problem of current Graphene output, and metal base is placed in fagging 1 surface growth, the smooth corrugationless of metal substrate surface, solve the problem of the easy fold of metal base in current technique, greatly improved the quality of product, improved economic benefit.
The above-mentioned foundation desirable embodiment of the present utility model of take is enlightenment, and by above-mentioned description, relevant staff can, within not departing from the scope of this utility model technological thought, carry out various change and modification completely.The technical scope of this utility model is not limited to the content on specification sheets, must determine its technical scope according to claim scope.
Claims (4)
1. prepare Graphene support for one kind, it is characterized in that: comprise some substrate rods, parallel or symmetric offset spread between described substrate rod, is fixed with some evenly distributed faggings on described substrate rod, described substrate rod two ends are respectively equipped with baffle plate, described fagging is between baffle plate, described baffle plate and fagging both sides are fixed with and strengthen rod, and described enhancing rod is positioned at baffle plate 1/5-1/2 At The Height, and substrate rod bottom surface is circular arc, bottom, two ends rounding, is the setting of 30-90 degree between described fagging and substrate rod.
2. the Graphene support of preparing as claimed in claim 1, is characterized in that: a kind of in quartz, corundum, graphite, silicon carbide, silicon nitride of described substrate rod, baffle plate, enhancing rod and fagging material.
3. the Graphene support of preparing as claimed in claim 1, is characterized in that: described substrate rod is two or two above parallel or symmetric offset spread.
4. the Graphene support of preparing as claimed in claim 1, is characterized in that: described fagging welds or assigns on substrate rod by slot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320561051.2U CN203513283U (en) | 2013-09-10 | 2013-09-10 | Bracket for preparing graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320561051.2U CN203513283U (en) | 2013-09-10 | 2013-09-10 | Bracket for preparing graphene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203513283U true CN203513283U (en) | 2014-04-02 |
Family
ID=50372242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320561051.2U Expired - Lifetime CN203513283U (en) | 2013-09-10 | 2013-09-10 | Bracket for preparing graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203513283U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104477893A (en) * | 2014-12-12 | 2015-04-01 | 中国科学院重庆绿色智能技术研究院 | Clamp for preparing graphene in double type manner and method for preparing graphene |
| CN104609416A (en) * | 2015-02-15 | 2015-05-13 | 重庆墨希科技有限公司 | Carrier used for graphene growth and method for preparing graphene |
-
2013
- 2013-09-10 CN CN201320561051.2U patent/CN203513283U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104477893A (en) * | 2014-12-12 | 2015-04-01 | 中国科学院重庆绿色智能技术研究院 | Clamp for preparing graphene in double type manner and method for preparing graphene |
| CN104609416A (en) * | 2015-02-15 | 2015-05-13 | 重庆墨希科技有限公司 | Carrier used for graphene growth and method for preparing graphene |
| CN104609416B (en) * | 2015-02-15 | 2017-01-18 | 重庆墨希科技有限公司 | Carrier used for graphene growth and method for preparing graphene |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: CHANGZHOU 2D CARBON TECHNOLOGY CO., LTD. Free format text: FORMER NAME: 2D CARBON (CHANGZHOU) TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 213149 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Patentee after: 2D CARBON (CHANGZHOU) TECH Inc.,Ltd. Address before: 213149 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Patentee before: 2D CARBON (CHANGZHOU) TECH Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20140402 |
|
| CX01 | Expiry of patent term |