CN104576615A - Panel device and detection method thereof - Google Patents
Panel device and detection method thereof Download PDFInfo
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- CN104576615A CN104576615A CN201510004609.0A CN201510004609A CN104576615A CN 104576615 A CN104576615 A CN 104576615A CN 201510004609 A CN201510004609 A CN 201510004609A CN 104576615 A CN104576615 A CN 104576615A
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- 238000001514 detection method Methods 0.000 title claims abstract description 16
- 238000005259 measurement Methods 0.000 claims abstract description 162
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000012545 processing Methods 0.000 claims description 14
- 238000010586 diagram Methods 0.000 description 22
- 230000012447 hatching Effects 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000002346 layers by function Substances 0.000 description 12
- 238000013461 design Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 6
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Abstract
The invention discloses a panel device and a detection method thereof. The second substrate is assembled with the first substrate in a face-to-face manner. The first measuring structure is arranged on one of the first substrate and the second substrate and is provided with N measuring openings, wherein N is a positive integer. The second measuring structure is arranged on one of the first substrate and the second substrate and is provided with N measuring patterns. The area of each measuring pattern correspondingly covers one of the measuring openings. The width of each measuring pattern in a selected measuring direction is not less than the width of one corresponding measuring opening, wherein the first measuring structure and the second measuring structure are composed of different film layers. The first measurement structure and the second measurement structure of the invention can be used for accurately judging whether the panel device has process alignment deviation.
Description
Technical field
The invention relates to a kind of face equipment and detection method thereof, and relate to a kind of face equipment of being stood by two substrate in batch and detection method thereof especially.
Background technology
Along with the development of information technology and manufacture of semiconductor ability, various product on the market all constantly promotes and makes to make qualification rate and fabrication error is subject to quite rigorous requirement in the conditions such as reaction rate, treatment efficiency, display quality.With display floater, display floater is normally by two or plural substrate in batch is vertical to be formed, and it is manufactured with different components for this thereon.Two or more substrate in batch is stood in process together, if the error in contraposition is excessive, by the demand making final products cannot meet market.Therefore, when organizing vertical multiple substrate, need suitable method and means offset whether exceed tolerable limit to detect contraposition.In addition, when substrate makes different elements, the manufacturing process of different elements is not necessarily synchronous, and therefore also may produce the error in contraposition, this kind of error also often needs to be required within certain degree to meet the demand in market.
Summary of the invention
The invention provides a kind of face equipment, providing measuring structure for correctly detecting the degree that contraposition offsets.
The invention provides a kind of detection method of face equipment, really can detect whether contraposition skew exceeds permissible range.
Face equipment of the present invention comprises a first substrate, a second substrate, one first measuring structure and one second measuring structure.Second substrate and first substrate stand with face-to-face mode group.First measuring structure is configured at first substrate and second substrate wherein in one, and has N number of measurement opening, and wherein N is positive integer.Second measuring structure is configured at first substrate and second substrate wherein in one, and has N number of measurement pattern.The area of each measurement pattern covered one of them accordingly and measured opening.In a selected measurement direction, each width measuring pattern is not less than the width that corresponding one of them measures opening, and wherein the first measuring structure is made up of different rete from the second measuring structure.
In one embodiment of this invention, above-mentioned i-th width measuring pattern is Xi, the width Yi of i-th measurement opening, Xi-Yi=Wi >=0.The width that jth measures pattern is Xj, and jth measures the width Yj of opening, Xj-Yj=Wj >=0.I and j is that 1 ~ N, i are not equal to j separately, and Wi is not equal to Wj.
In one embodiment of this invention, the width of above-mentioned N number of measurement pattern is inconsistent.
In one embodiment of this invention, the width of above-mentioned N number of measurement opening is inconsistent.
In one embodiment of this invention, each pattern and corresponding one of them of measuring measures the profile that opening has same shape but different size.
In one embodiment of this invention, above-mentioned profile is polygon, and in the polygonal area at least dropping on corresponding measurement pattern.
In one embodiment of this invention, at least one measurement opening is not covered completely by the measurement pattern of correspondence and forms a gap.
In one embodiment of this invention, the first measuring structure and the second measuring structure lay respectively on first substrate and second substrate.
In one embodiment of this invention, each width measuring pattern is greater than corresponding one of them and measures the width of opening and overlapping with the first measuring structure to form an overlapping area.Each measurement pattern has a mark.The overlapping area mark different from each other and different measurement pattern that different measurement pattern is formed is different from each other.
The detection method of a kind of face equipment of the present invention, comprises and judges whether above-mentioned panel has measurement opening do not covered completely by the area of the measurement pattern of correspondence and form a gap in mid-, and if so, then presentation surface panel assembly exists a processing procedure contraposition skew.
In one embodiment of this invention, i-th width measuring pattern is Xi, the width Yi of i-th measurement opening, Xi-Yi=Wi >=0, and the width that jth measures pattern is Xj, jth measures the width Yj of opening, Xj-Yj=Wj >=0, i and j is that 1 ~ N, j are not equal to i separately, and Wj is not equal to Wi.I-th measures opening and is not filled up by i-th measurement pattern, and jth measures opening and filled up by a jth measurement pattern, then the processing procedure contraposition in selected measurement direction of first substrate and second substrate offsets as (Wi)/2 are to (Wj)/2.
In one embodiment of this invention, each width measuring pattern is greater than corresponding one of them and measures the width of opening and overlapping with the first measuring structure to form an overlapping area, and different those overlapping areas measuring pattern formation each other.Each measurement pattern of different panels device has a mark, and the mark of different measurement pattern is different from each other.This detection method of face equipment comprises according to the mark on the measurement pattern corresponding to gap to judge the degree that processing procedure contraposition offsets.
Based on above-mentioned, have the first measuring structure and the second measuring structure that are made up of different rete in the face equipment of the embodiment of the present invention, wherein the measurement opening of the first measuring structure corresponds respectively to the measurement pattern of the second amount structure and each size measuring pattern is not less than the size of corresponding measurement opening.Thus, the first measuring structure and the second measuring structure can be used for judging whether face equipment exists processing procedure contraposition and offset accurately.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Accompanying drawing explanation
Figure 1A is the local upper schematic diagram of the face equipment of one embodiment of the invention.
Figure 1B is the generalized section of face equipment along hatching line I-I of Figure 1A.
Fig. 1 C and Fig. 1 D represents and is organizing the schematic diagram that the face equipment of fabrication errors occurs in vertical process.
Fig. 2 A be the face equipment of one embodiment of the invention wherein one group detect right upper schematic diagram.
Fig. 2 B is the generalized section of the hatching line II-II of Fig. 2 A.
Fig. 3 A be the face equipment of Fig. 2 A when there is contraposition skew wherein one group detect right upper schematic diagram.
Fig. 3 B is the generalized section of the hatching line III-III of Fig. 3 A.
Fig. 4 A be the face equipment of Fig. 2 A when there is contraposition skew wherein one group detect right upper schematic diagram.
Fig. 4 B is the generalized section of the hatching line IV-IV of Fig. 4 A.
Fig. 5 A is the local upper schematic diagram of the face equipment of another embodiment of the present invention.
Fig. 5 B is the generalized section of the hatching line V-V of Fig. 5 A.
Fig. 5 C is the schematic diagram of the face equipment that fabrication errors occurs in manufacturing process.
Fig. 5 D is the generalized section of the hatching line V-V of Fig. 5 C.
Fig. 6 A is the local upper schematic diagram of the face equipment of one embodiment of the invention.
Fig. 6 B is the generalized section of face equipment along hatching line VI-VI of Fig. 6 A.
Fig. 7 A is the upper schematic diagram of the first measuring structure and the second measuring structure in the face equipment of one embodiment of the invention.
Fig. 7 B is the close-up schematic view of the measurement pattern 542 in Fig. 7 A in the E of region.
Fig. 8 A is the upper schematic diagram of the first substrate of the face equipment of an embodiment.
Fig. 8 B is the upper schematic diagram of the second substrate of the face equipment of an embodiment.
Fig. 8 C is after Fig. 8 A founds into face equipment with two substrate in batch of Fig. 8 B, along the generalized section of hatching line VII-VII.
Fig. 8 D is after two substrate in batch of Fig. 8 A and Fig. 8 B are stood, along the generalized section of hatching line VIII-VIII.
Wherein, Reference numeral
100,100 ', 200,300,300 ', 400,800: face equipment
110,210,310,410: first substrate
120,220,320,420: second substrate
130,230,330,430,530: the first measuring structures
132,132i, 132j, 232,332,332i, 332j, 432,432i, 432j, 532: measure opening
140,240,340,440,540: the second measuring structures
142,142i, 142j, 242,242A, 342,342i, 342j, 442,442i, 442j, 542: measure pattern
542A: mark
810: the first functional layers
812: shading matrix
820: the second functional layers
822: signal shielding line
824, G, G1, G2: gap
A: overlapping area
Ai, Aj: overlapping widths
D1: direction
DL: holding wire
E: region
F1, F2, R: distance
I-I, II-II, III-III, IV-IV, V-V, VI-VI, VII-VII, VIII-VIII: hatching line
PE: pixel electrode
S1: the first side
S2: the second side
Xi, Xj, Yi, Yj: width
Embodiment
Below in conjunction with the drawings and specific embodiments, technical solution of the present invention is described in detail, further to understand object of the present invention, scheme and effect, but not as the restriction of claims protection range of the present invention.
Figure 1A is the local upper schematic diagram of the face equipment of one embodiment of the invention, and Figure 1B is the generalized section of face equipment along hatching line I-I of Figure 1A.Referring to Figure 1A and Figure 1B, face equipment 100 comprises first substrate 110, second substrate 120, first measuring structure 130 and the second measuring structure 140.Second substrate 120 and first substrate 110 stand with face-to-face mode group, therefore represent the profile of first substrate 110 and second substrate 120 in Figure 1A with identical rectangle frame.First measuring structure 130 is configured on first substrate 110, and has N number of measurement opening 132, and wherein N is positive integer.Second measuring structure 140 is configured on second substrate 120, and has N number of measurement pattern 142.From Figure 1A, each area measuring pattern 142 covered one of them accordingly and measured opening 132.In addition, the first measuring structure 130 and the second measuring structure 140 are owing to being made in first substrate 110 respectively with on second substrate 120, and both are made up of different rete.But, in other examples, the first measuring structure 130 and the second measuring structure 140 can be selected be made on first substrate 110 or be made in equally on second substrate 120 equally, but both are still made up of different rete.
In the present embodiment, the number measuring opening 132 is identical with measuring the number of pattern 142, and measures opening 132 and to measure pattern 142 man-to-man corresponding and form a measurement group.With Figure 1A and Figure 1B, above-mentioned N is 5.In addition, i-th measures pattern 142i and corresponds to i-th measurement opening 132i, and a jth measurement pattern 142j measures opening 132j corresponding to jth, and wherein i and j is 1 ~ N separately, and i is not equal to j.Meanwhile, the first measuring structure 130 and the second measuring structure 140 are all made by shading material, and shading material is such as shading resin, metal, photoresistance or its combination.Therefore, each measurement opening 132 light-permeable, and the area of each measurement opening 132 can be covered by of a correspondence measurement pattern 142 in figure ia.
In a selected measurement direction, such as, be parallel on the direction D1 of hatching line I-I, each width measuring pattern 142 is not less than the width that corresponding one of them measures opening 132.For example, i-th measures pattern 142i and has width Xi, and i-th measures opening 132i and have width Yi, and Xi-Yi=Wi >=0.Similarly, jth measures pattern 142j and has width Xj, and jth measures opening 132j and has width Yj, and Xj-Yj=Wj >=0.In addition, in the present embodiment, all measurement openings 132 have identical size, but measurement pattern 142 has different size respectively.In other words, Xi equals Xj, and Yi is not equal to Yj, and therefore Wi is not equal to Wj.
In figure ia, each pattern 142 and corresponding one of them of measuring measures the profile that opening 132 has same shape but different size.In Figure 1A and Figure 1B, this profile is polygon, and all limits of polygon all drop on corresponding measurement pattern 142 area in or be overlapped in the profile measuring pattern 142.Specifically, the position measuring pattern 142i is aligned with each other with the position measuring opening 132i, therefore measures pattern 142i and is overlapped in the overlapping widths Ai of the first measuring structure 130 for (Wi)/2 in side wherein.Similarly, the position measuring pattern 142j is aligned with each other with the position measuring opening 132j, therefore measures pattern 142j and is overlapped in the overlapping widths Aj of the first measuring structure 130 for (Wj)/2 in side wherein.Meanwhile, each measure pattern 142 be overlapped in the overlapping area of the first measuring structure 132 or overlapping widths also different.Such design can be used for detecting the degree that first substrate 110 and second substrate 120 groups found the fabrication errors occurred in process.
For example, Fig. 1 C and Fig. 1 D represents and is organizing the schematic diagram that the face equipment of fabrication errors occurs in vertical process.If there is contraposition skew in the face equipment of Figure 1A and Figure 1B 100 in contraposition process, then the structure of possibility pie graph 1C and Fig. 1 D.Specifically, in Fig. 1 C and Fig. 1 D, the component that face equipment 100 ' has is same as the component of face equipment 100, but the relative position between component is different from face equipment 100.
At this, being designed and sized to of five measurement openings 132 is identical, and being designed and sized to of five measurement patterns 142 is different from each other, if wherein these are measured opening 132 sequentially to be numbered by the first S1 to the second side, side S2, then first size measuring pattern 142 increases gradually to the 5th being designed and sized to of pattern 142 of measurement, and first size measuring pattern 142 can be same as the size that measures opening 132.
First substrate 110 and second substrate 120 there occurs the contraposition being parallel to direction D1 in vertical process and offset organize, form a clearance G by making at least one measurement opening 132 do not covered completely by the measurement pattern 142 of correspondence.In the present embodiment, first measures opening 132 and measures opening 132 all do not covered completely by corresponding measurement pattern 142 with second, and define clearance G 1 and clearance G 2 respectively, and the 3rd to the 5th measure opening 132 all completely cover by the measurement pattern 142 of correspondence.Now, polygonal measurement opening 132 at least one side by drop on corresponding measurement pattern 142 area outside.
From Fig. 1 D, second measures pattern 142i and has width Xi, and second measures opening 132i and have width Yi, and Xi-Yi=Wi >=0.Similarly, the 3rd measures pattern 142j and has width Xj, and the 3rd measures opening 132j and have width Yj, and Xj-Yj=Wj >=0.Be formed with clearance G 2 between second measurement opening 132i and corresponding measurement pattern 142i, and the 3rd measurement opening 132j is still covered by the measurement pattern 134j of correspondence completely.Therefore, first substrate 110 and the processing procedure of second substrate 120 in selected measurement direction (i.e. direction D1) offset and should drop on (Wi)/2 to (Wj)/2.
Specifically, suppose that first substrate 110 and second substrate 120 are organized immediately accurately, the first measuring structure 130 and the predetermined relative position that will present Figure 1A and Figure 1B of the second measuring structure 140.That is, when fabrication errors (contraposition skew) does not occur, the center that measurement pattern 142i is projected to the profile of first substrate 110 can coincide with one another with the center that corresponding measurement opening 132i is projected to the profile of first substrate 110.During the contraposition skew occurred in the direction di (as Fig. 1 C and 1D), contraposition side-play amount exceedes (Wi)/2, then measure opening 132i and fully would not be measured pattern 142i and covered.Similarly, contraposition side-play amount exceedes (Wj)/2, then measure opening 132j and fully would not be measured pattern 142j and covered.Therefore, fully be not measured pattern 142i by measurement opening 132i covered, and measuring opening 132j, to be still fully measured the situation that pattern 142j covers known, first substrate 110 and second substrate 120 processing procedure in the direction di offset (contraposition offsets) and should drop on (Wi)/2 to (Wj)/2.
Each measurement pattern 142 of the present embodiment is known with the size relationship of corresponding measurement opening 132, therefore by the right measurement pattern 142 of each measurement and can measure between opening 132 whether form clearance G to judge whether contraposition side-play amount is greater than this known quantity.In addition, different measurement pattern 142 is also different from each other with the size relationship of corresponding measurement opening 132, therefore can judge the degree of contraposition side-play amount by the position observing clearance G.With Fig. 1 C and Fig. 1 D, each measurement opening 132 and corresponding measurement pattern 142 are defined as a measurement right, then the present embodiment is provided with the first measurement to right to the 5th measurement.When making face equipment 100 ', each measurement first can be set to the predetermined margin of error that will represent.Such as, first measures being set as the margin of error of reacting 1 micron, second measures being set as the margin of error of reacting 2 microns, 3rd measures being set as the margin of error of reacting 3 microns, 4th measures being set as the margin of error of reacting 4 microns, and the 5th measures being set as the margin of error of reacting 5 microns.In face equipment 100', clearance G is formed between the 3rd right measurement opening 132i of measurement and measurement pattern 142i, and the 4th measures right measurement opening 132j and be still measured pattern 142j and cover completely, therefore can judge out that the contraposition deviant of face equipment 100 ' drops between 3 microns to 4 microns.Thus, the face equipment 100 ' that can have been stood by group easily interpretation goes out contraposition degrees of offset.Can consider when contraposition degrees of offset is greater than the specification that can hold to carry out repairing or scrapping.Above-mentioned numerical value be only illustrate how by measurement to determining contraposition degrees of offset, have no intent to represent that measuring pattern 142 needs as limit with the size measuring opening 132.
At above-mentioned face equipment 100 with face equipment 100 ', first measuring structure 130 and the second measuring structure 140 can make to form required profile by suitable processing procedure, and the processing procedure that wherein can form predetermined profile roughly comprises micro image etching procedure, printing process etc.In general, the profile of the structure completed and size not necessarily can absolutely be fit to predetermined design, this by the measurement caused described by Fig. 1 C and Fig. 1 D to judged contraposition offset occur time, actual contraposition degrees of offset is not inconsistent with presetting.In general, measure when having judged that contraposition skew occurs, if actual contraposition degrees of offset is less than preset, then can provide comparatively strict criterion.But, measure when having judged that contraposition skew occurs, if actual contraposition degrees of offset is greater than preset, then criterion will become comparatively loose and possibly correctly cannot grasp product and whether meet specification.
Fig. 2 A be the face equipment of one embodiment of the invention wherein one group detect right upper schematic diagram, and Fig. 2 B is the generalized section of the hatching line II-II of Fig. 2 A.Referring to Fig. 2 A and Fig. 2 B, detection in the face equipment 200 of the present embodiment is to comprising the first measuring structure 230 and the second measuring structure 240 be configured between first substrate 210 and second substrate 220, and wherein the first measuring structure 230 is configured on first substrate 210 that second measuring structure 240 is configured on second substrate 220.First measuring structure 230 has measurement opening 232, and the second measuring structure 240 comprises measurement pattern 242.In the present embodiment, shown in the measurement pattern 242A that the predetermined size that will make of measurement pattern 242 should represent as dotted line.It can thus be appreciated that the present embodiment describes the little aspect of the more predetermined size of actual fabrication size out.
Fig. 3 A be the face equipment of Fig. 2 A when there is contraposition skew wherein one group detect right upper schematic diagram, and Fig. 3 B is the generalized section of the hatching line III-III of Fig. 3 A.From Fig. 3 A and Fig. 3 B, if processing procedure precision is quite accurate, the second measuring structure 240 has measurement pattern 242A.Now, after contraposition side-play amount in the direction di exceedes distance F1 between first substrate 210 and second substrate 220, measure opening 232 and measure between pattern 242 and will form gap.Therefore, during detection faces panel assembly 200, observing this group and measure centering when being formed with gap, can being judged as that degree that contraposition offsets is for being greater than distance F1.
Fig. 4 A be the face equipment of Fig. 2 A when there is contraposition skew wherein one group detect right upper schematic diagram, and Fig. 4 B is the generalized section of the hatching line IV-IV of Fig. 4 A.From Fig. 4 A and Fig. 4 B, the actual size measuring pattern 242 is less than the size of the predetermined measurement pattern 242A that will make.Under such a condition, after contraposition side-play amount in the direction di exceedes distance F2 between first substrate 210 and second substrate 220, measure opening 232 and measure between pattern 242A and will form gap.
From Fig. 2 B, Fig. 3 B and Fig. 4 B, distance F1 is greater than distance F2.Therefore, when manufacturing process causes the size measuring pattern 242 to be less than the size of predetermined design, first substrate 210 and second substrate 220 groups contraposition immediately offset and are less than distance F1, and this measures just can being differentiated out.That is, although the measurement of the present embodiment is used to predetermined the degree that expression contraposition skew arrives distance F1, under practical situation, measures opening 232 and can reflect less error degree with measurement pattern 242.Thus, the design of the first measuring structure 230 and the second measuring structure 240 provides the degree that stricter standard offsets to determine contraposition.In other words, if when interpretation goes out contraposition skew, actual contraposition side-play amount is less than and presets, then make error degree be over-evaluated, this contributes to guaranteeing that the quality of product is all in permissible scope.Therefore, the measurement of the present embodiment is to reducing the probability of defective item by detecting.
First measuring structure and the second measuring structure are made on first substrate and second substrate by above-described embodiment respectively, but the present invention is not as limit.Fig. 5 A is the local upper schematic diagram of the face equipment of another embodiment of the present invention, and Fig. 5 B is the generalized section of the hatching line V-V of Fig. 5 A.Referring to Fig. 5 A and Fig. 5 B, face equipment 300 comprises first substrate 310, second substrate 320, first measuring structure 330 and the second measuring structure 340.Second substrate 320 and first substrate 310 stand with face-to-face mode group, therefore represent the profile of first substrate 310 and second substrate 320 in Fig. 5 A with identical rectangle frame.First measuring structure 330 is configured on first substrate 310, and has N number of measurement opening 332, and wherein N is positive integer.Second measuring structure configuration 340 on second substrate 320, and has N number of measurement pattern 342.From Fig. 5 A, each area measuring pattern 342 covered that one of them measures opening 332 accordingly and to form a measurement right.In addition, the first measuring structure 330 and the second measuring structure 340 are all made on second substrate 320, and both are made up of different rete.
Specifically, in a selected measurement direction, such as, be parallel on the direction D1 of hatching line V-V, each width measuring pattern 342 is not less than the width that corresponding one of them measures opening 332.For example, i-th measures pattern 342i and has width Xi, and i-th measures opening 332i and have width Yi, and Xi-Yi=Wi >=0.Similarly, jth measures pattern 342j and has width Xj, and jth measures opening 332j and has width Yj, and Xj-Yj=Wj >=0.In addition, in the present embodiment, all measurement openings 332 have identical size, but measurement pattern 342 has different size respectively.Therefore, from Fig. 5 B, Xi equals Xj, and Yi is not equal to Yj, and therefore Wi is not equal to Wj.In addition, the position measuring pattern 342i is aligned with each other with the position measuring opening 332i, makes to measure pattern 342i and is overlapped in the overlapping widths Ai of the first measuring structure 330 for (Wi)/2 in side wherein.Similarly, the position measuring pattern 342j is aligned with each other with the position measuring opening 332j, makes to measure pattern 342j and is overlapped in the overlapping widths Aj of the first measuring structure 330 for (Wj)/2 in side wherein.
Fig. 5 C is the schematic diagram of the face equipment that fabrication errors occurs in manufacturing process, and Fig. 5 D is the generalized section of the hatching line V-V of Fig. 5 C.Please refer to Fig. 5 C and Fig. 5 D, face equipment 300 ' offsets the rear structure had for contraposition occurs face equipment 300 in manufacturing process.In the present embodiment, the first measuring structure 330 is made by different retes from the second measuring structure 340, and therefore under contraposition skew, having at least one to measure opening 332 can not be covered completely by the measurement pattern 342 of correspondence.From Fig. 5 C and Fig. 5 D, two contraposition openings 342 of the leftmost side completely crested and be formed with clearance G between bit patterns 342 with corresponding in drawing.
At this, being designed and sized to of five measurement openings 332 is identical, and being designed and sized to of five measurement patterns 342 is different from each other, if wherein these are measured opening 132 sequentially to be numbered by the first S1 to the second side, side S2, then first size measuring pattern 342 increases gradually to the 5th being designed and sized to of pattern 342 of measurement, and first size measuring pattern 342 can be same as the size that measures opening 332.
From Fig. 5 D, be formed with clearance G between second measurement opening 332i and corresponding measurement pattern 342i, and the 3rd measurement opening 332j is still covered by the measurement pattern 334j of correspondence completely.Therefore, first substrate 110 and the processing procedure of second substrate 120 in selected measurement direction (i.e. direction D1) offset and should drop on (Wi)/2 to (Wj)/2.Distribution scenario by clearance G just can determine the degree that the first measuring structure 330 and the second contraposition of measuring structure 340 on processing procedure offset.
Above-described embodiment all has same size and measures pattern have different size to illustrate to measure opening, but the present invention is not as limit.Fig. 6 A is the local upper schematic diagram of the face equipment of one embodiment of the invention, and Fig. 6 B is the generalized section of face equipment along hatching line VI-VI of Fig. 6 A.Referring to Fig. 6 A and Fig. 6 B, face equipment 400 comprises first substrate 410, second substrate 420, first measuring structure 430 and the second measuring structure 440.Second substrate 420 and first substrate 410 stand with face-to-face mode group, therefore represent the profile of first substrate 410 and second substrate 420 in Fig. 6 A with identical rectangle frame.First measuring structure 430 is configured on first substrate 410, and has N number of measurement opening 432, and wherein N is positive integer.Second measuring structure configuration 440 on second substrate 420, and has N number of measurement pattern 442.From Fig. 6 A, each area measuring pattern 442 covered one of them accordingly and measured opening 432.In addition, the first measuring structure 430 and the second measuring structure 440 are owing to being made in first substrate 410 respectively with on second substrate 420.
In the present embodiment, the number measuring opening 432 is identical with measuring the number of pattern 442, and measure opening 432 with measure pattern 442 man-to-man corresponding and form one measure right.Specifically, the embodiment part that the present embodiment is different from Figure 1A and Figure 1B is, in the present embodiment, all measurement patterns 442 have identical size, but measurement opening 432 has different size respectively.In a selected measurement direction, such as, on direction D1, each width measuring pattern 442 is not less than the width that corresponding one of them measures opening 432.For example, i-th measures pattern 442i and has width Xi, and i-th measures opening 432i and have width Yi, and Xi-Yi=Wi >=0.Similarly, jth measures pattern 442j and has width Xj, and jth measures opening 432j and has width Yj, and Xj-Yj=Wj >=0.With the present embodiment, width Xi is equal to width Xj, and width Yi is less than width Yj, so Wi is not equal to Wj, but not as limit.In other embodiments, width Xi need not be limited and whether be equal to width Xj, also need not limit width Yi and whether equal width Yj.When Wi is not equal to Wj, the measurement opening 432 of different measurement group just can be used for judging fabrication errors degree with measurement pattern 442.At this, the judgement of fabrication errors degree with reference to the explanation of previous embodiment, separately can not repeat.
Fig. 7 A is the upper schematic diagram of the first measuring structure and the second measuring structure in the face equipment of one embodiment of the invention, and Fig. 7 B is the close-up schematic view of the measurement pattern 542 in Fig. 7 A in the E of region.Please refer to Fig. 7, the first measuring structure 530 has multiple measurement opening 532, and the second measuring structure 540 comprises multiple measurement pattern 542.Each measures the relativeness of opening 532 and corresponding measurement pattern 542 and size design with reference to the explanation of previous embodiment, separately can not repeat herein.That is, measure opening 532 and the size measuring pattern 542 and position relationship can be same as and measure opening 132 and measure pattern 142, be same as and measure opening 232 and measure pattern 242, be same as to measure opening 332 and measurement pattern 342 or be same as and measure opening 432 and measurement pattern 442.
In the present embodiment, each measurement pattern 542 has mark 542A, and wherein marking 542A can be word, numeral, symbol or its combination.Mark 542A can by forming opening or thinning district defines out in each measurement pattern 542.In addition, as shown in Figure 7, each width measuring pattern 542 equals or is greater than the width that corresponding one of them measures opening 532.Therefore, each measurement pattern 542 can be overlapping to form an overlapping area A with the area that the first measuring structure 530 is watched by top view (Fig. 7).Meanwhile, the size measuring pattern 542 is different from each other, and the overlapping area A that different measurement pattern 542 is formed is different from each other.At this, the different mark 542A measured on pattern 542 is different from each other.
Specifically, the mark 542A of the present embodiment is numeral 0 ~ 4, wherein these not isolabeling 542A be used for representing different contraposition degrees of offset.For example, in the design of the present embodiment, mark 542A be 0 measurement pattern 542 there is the area identical with corresponding measurement opening 532.Meanwhile, mark 542A be 1 ~ 3 measurement pattern 542 there is the area larger than the measurement opening 532 of correspondence, and the size of measurement pattern 542 of the larger then correspondence of the numeral of mark 542A is larger.Therefore, when detecting, as long as observe, the measurement pattern 542 of which mark corresponding to 542A is other exists gap, just can know contraposition degrees of offset.
For example, mark 542A is when being formed with gap between the measurement pattern 542 of 0 and corresponding measurement opening 532, represents that the value of contraposition skew is greater than 0.When carrying out detection operation, the error degree that the measurement pattern 540 that is 3 reacts if specification error permissible range needs to be less than mark 542A, then marking 542 is be formed with gap between the measurement pattern 542 of 2 and corresponding measurement opening 532, and mark 542 when being very close to each other between the measurement pattern 542 of 3 and corresponding measurement opening 532, this product can be allowed by detecting.In addition, marking 542 is be formed with gap between the measurement pattern 542 of 3 and corresponding measurement opening 532 then this product cannot by detecting.Arranging of above-mentioned mark 542A can in the middle of the measuring structure of each embodiment of application of aforementioned, to help quick interpretation testing result.
Fig. 8 A is the upper schematic diagram of the first substrate of the face equipment of an embodiment, and Fig. 8 B is the upper schematic diagram of the second substrate of the face equipment of an embodiment.Referring to Fig. 8 A and Fig. 8 B, first substrate 110 be manufactured with the first functional layer 810 and the first measuring structure 130 and second substrate 120 be manufactured with the second functional layer 820 and the second measuring structure 140.Fig. 8 C is after Fig. 8 A founds into face equipment with the substrate in batch of Fig. 8 B, and along the generalized section of hatching line VII-VII, and Fig. 8 D is after to be the substrate in batch of Fig. 8 A and Fig. 8 B vertical, along the generalized section of hatching line VIII-VIII.From Fig. 8 C and Fig. 8 D, first substrate 110 can form face equipment 800 with second substrate 120 groups is vertical, wherein the first functional layer 810 is identical rete with the first measuring structure 130, and at least one component of the second functional layer 820 is identical rete with the second measuring structure 140.To be applied to display floater, the first functional layer 810 can be the shading matrix in chromatic filter layer, and the second functional layer 820 can be active cell array, but not as limit.
When face equipment 800 is display floater, the second functional layer 820 that second substrate 120 is arranged such as comprises pixel electrode PE, holding wire DL and signal shielding line 822, but not as limit, wherein the second functional layer 820 can also include scan line, active member, storage capacitor structure etc. and directly not be illustrated in component in figure.At this, the region between adjacent two pixel electrode PE cannot normally show, and needs to cover with shading matrix 812 and signal shielding line 822.In general, the size of shading matrix 812 at least needs to cover the gap 824 between adjacent two bars shielding conductors 822.Therefore, the width of shading matrix 812 is set as that the width being not less than gap 824 occurs to avoid light leak condition usually.With the present embodiment, the width one that the width of shading matrix 812 exceeds gap 824 apart from R to guarantee that gap 824 is completely obscured.
May be there is contraposition in the middle of the process stood and offset in first substrate 110 and second substrate 120 organize, this makes distance R reduce, and even allows gap 824 come out.Once come out in gap 824, then light leak condition will occur, and this makes the quality of display floater bad.Therefore, face equipment 800 is provided with the first measuring structure 130 and the second measuring structure 140 in Fig. 8 D, particularly, second measuring structure 140 makes with the identical rete of signal shielding line 822 of the second functional layer 820, detects whether the degree of the vertical contraposition skew of group exceeds permissible scope with efficient.First measuring structure 130 and the second measuring structure 140 are used for judging that the method for contraposition degrees of offset can with reference to the explanation of previous embodiment.In addition, the first measuring structure 130 in Fig. 8 A to Fig. 8 D and the second measuring structure 140 can be replaced by first and second measuring structure of any one in previous embodiment.
In the present embodiment, if the width making signal shielding line 822 in the process of the second functional layer 820 is less than the size of predetermined design, then distance R can reduce, and what this made that the permissible contraposition degrees of offset of face equipment 800 also can be corresponding reduces.Now, according to the associated description of Fig. 2 A, 2B, 3A, 3B, 4A, 4B, the size of the second measuring structure 240 also can allow along with reducing and measure pattern 242 and just reflected contraposition skew when contraposition degrees of offset is less than the degree preset and occur, and this contributes to correct judging whether contraposition degrees of offset exceedes allowable range.
In sum, the measuring structure that different rete is formed is designed to have different overlapping area (or overlapping widths) by the present invention in face equipment.When organizing vertical two substrates or when making the rete of two different patterns, between measuring structure, form the generation that gap can reflect contraposition skew.In addition, measuring structure can form multiple measurement group, and different measurement group is designed to react different contraposition degrees of offset.Therefore, as long as why pick out measurement group existing for gap during detection, just efficiently can learn whether contraposition degrees of offset exceeds allowable range.In at least one embodiment, when the scantling after single film pattern is less than predetermined design, the contraposition degrees of offset that measurement group is reacted also reduces thereupon, the situation reflecting actual contraposition skew that therefore can be comparatively loyal.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the present invention, but these change accordingly and are out of shape the protection range that all should belong to the claim appended by the present invention.
Claims (12)
1. a face equipment, is characterized in that, comprising:
One first substrate;
One second substrate, stands with face-to-face mode group with this first substrate;
One first measuring structure, be configured at this first substrate and this second substrate wherein in one, and have N number of measurement opening, wherein N is positive integer; And
One second measuring structure, be configured at this first substrate and this second substrate wherein in one, and there is N number of measurement pattern, respectively the area of this measurement pattern covered one of them accordingly and measured opening and the width being not less than this corresponding one of them measurement opening at a width selecting respectively this measurement pattern in measurement direction, and wherein this first measuring structure is made up of different rete from this second measuring structure.
2. face equipment as claimed in claim 1, it is characterized in that, i-th width measuring pattern is Xi, the width Yi of i-th measurement opening, Xi-Yi=Wi >=0, and the width that jth measures pattern is Xj, jth measures the width Yj of opening, Xj-Yj=Wj >=0, and i and j is 1 ~ N separately, i is not equal to j, and Wi is not equal to Wj.
3. face equipment as claimed in claim 2, it is characterized in that, the width of this N number of measurement pattern is inconsistent.
4. face equipment as claimed in claim 2, it is characterized in that, the width of this N number of measurement opening is inconsistent.
5. face equipment as claimed in claim 1, is characterized in that, respectively this measurement pattern and corresponding this one of them measure the profile that opening has same shape but different size.
6. face equipment as claimed in claim 5, it is characterized in that, this profile is polygon, and in this polygonal area at least dropping on this corresponding measurement pattern.
7. the face equipment as described in any one of claim 1 to 6, is characterized in that, at least one measures opening and is not covered completely by the measurement pattern of correspondence and form a gap.
8. the face equipment as described in any one of claim 1 to 6, is characterized in that, this first measuring structure and this second measuring structure lay respectively on this first substrate and this second substrate.
9. the face equipment as described in any one of claim 1 to 6, it is characterized in that, respectively the width of this measurement pattern is greater than corresponding this one of them measures the width of opening and overlapping with this first measuring structure to form an overlapping area, respectively this measurement pattern has a mark, and those overlapping areas those marks different from each other and different measurement pattern that different measurement pattern is formed are different from each other.
10. a detection method for face equipment, is characterized in that, comprising:
Face equipment as described in any one of claim 1 to 9 is provided; And
Judge whether that measuring opening is not covered completely by the area of the measurement pattern of correspondence and form a gap, if so, then represent that this face equipment exists a processing procedure contraposition skew.
The detection method of 11. face equipments as claimed in claim 10, it is characterized in that, i-th width measuring pattern is Xi, the width Yi of i-th measurement opening, Xi-Yi=Wi >=0, and the width that jth measures pattern is Xj, jth measures the width Yj of opening, Xj-Yj=Wj >=0, i and j is 1 ~ N separately, j is not equal to i, and Wj is not equal to Wi, this i-th measures opening and is not filled up by this i-th measurement pattern, this jth measures opening and is filled up by this jth measurement pattern, then this first substrate and this second substrate this processing procedure in this selected measurement direction offset and drop on (Wi)/2 to (Wj)/2.
The detection method of 12. face equipments as claimed in claim 10, it is characterized in that, respectively this measurement pattern of this face equipment has a mark, respectively the width of this measurement pattern is equal to or greater than corresponding this one of them measures the width of opening and overlapping with this first measuring structure to form an overlapping area, those overlapping areas mark different from each other and different measurement pattern that different measurement pattern is formed is different from each other, and this detection method of this face equipment comprises according to this mark on this measurement pattern corresponding to this gap to judge the degree that this processing procedure contraposition offsets.
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| TW103141391A TWI547918B (en) | 2014-11-28 | 2014-11-28 | Panel device and detecting method thereof |
| TW103141391 | 2014-11-28 |
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| CN104835837A (en) * | 2015-06-05 | 2015-08-12 | 杭州士兰微电子股份有限公司 | High voltage semiconductor device and manufacture method thereof |
| CN105206601A (en) * | 2015-10-19 | 2015-12-30 | 京东方科技集团股份有限公司 | Test component unit, array substrate, display panel, display device and method for manufacturing test component unit |
| WO2017118073A1 (en) * | 2016-01-05 | 2017-07-13 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, and display apparatus |
| WO2022199192A1 (en) * | 2021-03-23 | 2022-09-29 | 滁州惠科光电科技有限公司 | Coa type array substrate and measurement method therefor, and liquid crystal display panel |
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| CN105206601A (en) * | 2015-10-19 | 2015-12-30 | 京东方科技集团股份有限公司 | Test component unit, array substrate, display panel, display device and method for manufacturing test component unit |
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| WO2017118073A1 (en) * | 2016-01-05 | 2017-07-13 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, and display apparatus |
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| WO2022199192A1 (en) * | 2021-03-23 | 2022-09-29 | 滁州惠科光电科技有限公司 | Coa type array substrate and measurement method therefor, and liquid crystal display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI547918B (en) | 2016-09-01 |
| TW201619938A (en) | 2016-06-01 |
| CN104576615B (en) | 2017-08-15 |
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