TWI547918B - Panel device and detecting method thereof - Google Patents

Description

Panel device and detection method thereof

The present invention relates to a panel device and a method for detecting the same, and more particularly to a panel device formed by two substrates and a detecting method thereof.

With the development of information technology and semiconductor process capabilities, various types of products on the market have been continuously improved in terms of reaction rate, processing efficiency, display quality and other conditions, resulting in very stringent requirements for production yield and production error. In the case of a display panel, the display panel is usually formed by two or more substrates, which are provided with different members on the substrate. In the process of grouping two or more substrates together, if the error in the alignment is too large, the final product will not meet the market demand. Therefore, when assembling a plurality of substrates, it is necessary to have appropriate methods and means to detect whether the alignment offset exceeds a tolerable limit. In addition, when different components are fabricated on the substrate, the manufacturing process of the different components is not necessarily synchronized, so that errors in alignment may also occur, and such errors often need to be required to meet the needs of the market to a certain extent.

The present invention provides a panel apparatus that provides a measurement structure for correctly detecting the degree of alignment offset.

The present invention provides a method of detecting a panel device, which can surely detect whether the alignment offset is outside the allowable range.

The panel device of the present invention includes a first substrate, a second substrate, a first measurement structure, and a second measurement structure. The second substrate and the first substrate are assembled in a face-to-face manner. The first measurement structure is disposed on one of the first substrate and the second substrate and has N measurement openings, where N is a positive integer. The second measuring structure is disposed on one of the first substrate and the second substrate and has N measurement patterns. The area of each measurement pattern correspondingly shields one of the measurement openings. The width of each measurement pattern in a selected measurement direction is not less than the width of one of the corresponding measurement openings, wherein the first measurement structure and the second measurement structure are composed of different film layers.

In an embodiment of the invention, the width of the ith measurement pattern is Xi, and the width of the ith measurement opening is Yi, and Xi-Yi=Wi 0. The width of the jth measurement pattern is Xj, and the width of the jth measurement opening is Yj, Xj-Yj=Wj 0. i and j are each 1~N, i is not equal to j, and Wi is not equal to Wj.

In an embodiment of the invention, the widths of the N measurement patterns are inconsistent.

In an embodiment of the invention, the widths of the N measurement openings are inconsistent.

In an embodiment of the invention, each measurement pattern and one of the corresponding ones The measurement openings have contours of the same shape but different sizes.

In an embodiment of the invention, the contour is a polygon, and at least one side of the polygon falls within an area of the corresponding measurement pattern.

In an embodiment of the invention, the at least one measurement opening is not completely shielded by the corresponding measurement pattern to form a gap.

In an embodiment of the invention, the first measurement structure and the second measurement structure are respectively located on the first substrate and the second substrate.

In an embodiment of the invention, the width of each of the measurement patterns is greater than the width of the corresponding one of the measurement openings to overlap the first measurement structure to form an overlap area. Each measurement pattern has a mark. The overlapping areas formed by the different measurement patterns are different from each other and the marks of the different measurement patterns are different from each other.

A method for detecting a panel device according to the present invention includes determining whether a measurement opening in the panel is completely shielded from the area of the corresponding measurement pattern to form a gap, and if so, indicating that the panel device has a process alignment bias shift.

In an embodiment of the invention, the width of the i-th measurement pattern is Xi, and the width of the i-th measurement opening is Yi, and Xi-Yi=Wi 0, and the width of the jth measurement pattern is Xj, the width of the jth measurement opening Yj, Xj-Yj=Wj 0, i and j are each 1~N, j is not equal to i, and Wj is not equal to Wi. The i-th measurement opening is not filled by the ith measurement pattern, and the j-th measurement opening is filled by the j-th measurement pattern, and the process pair of the first substrate and the second substrate in the selected measurement direction The bit offset is (Wi)/2 to (Wj)/2.

In an embodiment of the invention, the width of each measurement pattern is greater than the width of the corresponding one of the measurement openings to overlap the first measurement structure to form an overlapping surface. And the overlapping areas formed by different measurement patterns are mutually. Each of the measurement patterns of the different panel devices has a mark, and the marks of the different measurement patterns are different from each other. The detecting method of the panel device includes determining the degree of the process alignment offset according to the mark on the measurement pattern corresponding to the gap.

Based on the above, the panel device of the embodiment of the present invention has a first measurement structure and a second measurement structure composed of different film layers, wherein the measurement openings of the first measurement structure respectively correspond to the measurement of the second quantity structure. The pattern and the size of each measurement pattern are not smaller than the size of the corresponding measurement opening. In this way, the first measurement structure and the second measurement structure can be used to accurately determine whether the panel device has a process alignment offset.

The above described features and advantages of the invention will be apparent from the following description.

100, 100', 200, 300, 300', 400, 800‧‧‧ panel devices

110, 210, 310, 410‧‧‧ first substrate

120, 220, 320, 420‧‧‧ second substrate

130, 230, 330, 430, 530‧‧‧ first measurement structure

132, 132i, 132j, 232, 332, 332i, 332j, 432, 432i, 432j, 532‧‧

140, 240, 340, 440, 540‧‧‧ second measurement structure

142, 142i, 142j, 242, 242A, 342, 342i, 342j, 442, 442i, 442j, 542‧‧ ‧ measurement pattern

542A‧‧‧ mark

810‧‧‧ first functional layer

812‧‧‧Lighting matrix

820‧‧‧Second functional layer

822‧‧‧ signal shielded cable

824, G, G1, G2‧‧‧ gap

A‧‧‧Overlapping area

Ai, Aj‧‧‧ overlap width

D1‧‧ Direction

DL‧‧‧ signal line

E‧‧‧ area

F1, F2, R‧‧‧ distance

I-I, II-II, III-III, IV-IV, V-V, VI-VI, VII-VII, VIII-VIII‧‧‧

PE‧‧‧ pixel electrode

S1‧‧‧ first side

S2‧‧‧ second side

Xi, Xj, Yi, Yj‧‧‧Width

1A is a partial top plan view of a panel device according to an embodiment of the invention.

1B is a cross-sectional view of the panel device of FIG. 1A taken along line I-I.

1C and 1D show schematic views of panel devices in which process errors occur during assembly.

2A is a top plan view of a set of detection pairs of a panel device according to an embodiment of the invention.

2B is a schematic cross-sectional view taken along line II-II of FIG. 2A.

3A is a set of detection pairs when the panel device of FIG. 2A has a registration offset The top view is schematic.

3B is a schematic cross-sectional view taken along line III-III of FIG. 3A.

4A is a top plan view showing one of the detection pairs when the panel device of FIG. 2A has a registration offset.

4B is a schematic cross-sectional view taken along line IV-IV of FIG. 4A.

FIG. 5A is a partial top plan view of a panel device according to another embodiment of the present invention.

Fig. 5B is a schematic cross-sectional view taken along line V-V of Fig. 5A.

Fig. 5C is a schematic view of a panel device in which a process error occurs during fabrication.

Fig. 5D is a schematic cross-sectional view taken along line V-V of Fig. 5C.

6A is a partial top plan view of a panel device according to an embodiment of the invention.

6B is a cross-sectional view of the panel device of FIG. 6A taken along line VI-VI.

7A is a top plan view of a first measurement structure and a second measurement structure in a panel device according to an embodiment of the invention.

FIG. 7B is a partially enlarged schematic view of the measurement pattern 542 in the area E of FIG. 7A.

8A is a top plan view of a first substrate of a panel device of an embodiment.

8B is a top plan view of a second substrate of the panel device of an embodiment.

8C is a cross-sectional view taken along line VII-VII after the two substrate assemblies of FIGS. 8A and 8B are assembled into a panel device.

8D is a schematic cross-sectional view taken along line VIII-VIII after the two substrates of FIGS. 8A and 8B are assembled.

1A is a partial top plan view of a panel device according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view of the panel device of FIG. 1A taken along line I-I. Referring to FIG. 1A and FIG. 1B simultaneously, the panel device 100 includes a first substrate 110, a second substrate 120, a first measurement structure 130, and a second measurement structure 140. The second substrate 120 and the first substrate 110 are assembled in a face-to-face manner, and thus the outlines of the first substrate 110 and the second substrate 120 are indicated by the same rectangular frame in FIG. 1A. The first measurement structure 130 is disposed on the first substrate 110 and has N measurement openings 132, where N is a positive integer. The second measurement structure 140 is disposed on the second substrate 120 and has N measurement patterns 142. As can be seen from FIG. 1A, the area of each measurement pattern 142 correspondingly shields one of the measurement openings 132. In addition, the first measurement structure 130 and the second measurement structure 140 are respectively formed on the first substrate 110 and the second substrate 120, and the two are composed of different film layers. However, in other embodiments, the first measurement structure 130 and the second measurement structure 140 can be selectively fabricated on the first substrate 110 or the second substrate 120, but the two are still different films. Layer composition.

In the present embodiment, the number of measurement openings 132 is the same as the number of measurement patterns 142, and the measurement openings 132 correspond to the measurement patterns 142 one-to-one to form a measurement group. In the case of FIG. 1A and FIG. 1B, the above N is 5. In addition, the i-th measurement pattern 142i corresponds to the i-th measurement opening 132i, and the j-th measurement pattern 142j corresponds to the j-th measurement opening 132j, where i and j are each 1~N, and i does not Equal to j. At the same time, the first measurement structure 130 and the second measurement structure 140 are both made of a light-shielding material, such as a light-shielding resin, a metal, a photoresist or a combination thereof. Therefore, each measurement opening 132 is transparent, and the area of each measurement opening 132 is Both of FIG. 1A are shaded by a corresponding measurement pattern 142.

In a selected measurement direction, such as direction D1 parallel to the line II, the width of each measurement pattern 142 is not less than the width of one of the corresponding measurement openings 132. For example, the i-th measurement pattern 142i has a width Xi, the i-th measurement opening 132i has a width Yi, and Xi-Yi=Wi 0. Similarly, the jth measurement pattern 142j has a width Xj, the jth measurement opening 132j has a width Yj, and Xj-Yj=Wj 0. In addition, in the present embodiment, all of the measurement openings 132 have the same size, but the measurement patterns 142 have different sizes, respectively. In other words, Xi is equal to Xj, and Yi is not equal to Yj, so Wi is not equal to Wj.

In FIG. 1A, each of the measurement patterns 142 has the same shape but a different size profile as the corresponding one of the measurement openings 132. In FIGS. 1A and 1B, the contour is a polygon, and all sides of the polygon fall within the area of the corresponding measurement pattern 142 or overlap the contour of the measurement pattern 142. Specifically, the position of the measurement pattern 142i and the position of the measurement opening 132i are aligned with each other, and thus the overlap width Ai of the measurement pattern 142i on one side of the first measurement structure 130 is (Wi)/2. Likewise, the position of the measurement pattern 142j and the position of the measurement opening 132j are aligned with each other, and thus the overlap width Aj of the measurement pattern 142j overlapping one side of the first measurement structure 130 on one side is (Wj)/2. At the same time, the overlap area or overlap width of each measurement pattern 142 overlapping the first measurement structure 132 is also different. Such a design can be used to detect the extent of process error that occurs during the assembly of the first substrate 110 and the second substrate 120.

For example, FIGS. 1C and 1D show schematic diagrams of panel devices in which process errors occur during assembly. The panel device 100 of FIG. 1A and FIG. 1B is in the right The alignment offset occurs during the bit process, which may constitute the structure of FIG. 1C and FIG. 1D. Specifically, in Fig. 1C and Fig. 1D, the panel device 100' has the same members as those of the panel device 100, but the relative positions between the members are different from those of the panel device 100.

Here, the five measurement openings 132 are sized to be the same, and the five measurement patterns 142 are sized differently from each other, wherein the measurement openings 132 are sequentially numbered from the first side S1 to the second side S2. The size of the first measurement pattern 142 to the size of the fifth measurement pattern 142 is designed to be gradually increased, and the size of the first measurement pattern 142 may be the same as the size of one measurement opening 132.

The alignment of the first substrate 110 and the second substrate 120 parallel to the direction D1 occurs during the assembly, so that the at least one measurement opening 132 is not completely shielded by the corresponding measurement pattern 142 to form a gap G. In this embodiment, the first measurement opening 132 and the second measurement opening 132 are not completely shielded by the corresponding measurement pattern 142, and the gap G1 and the gap G2 are respectively defined, and the third to fifth are respectively defined. Each of the measurement openings 132 is completely obscured by the corresponding measurement pattern 142. At this time, at least one side of the measurement opening 132 of the polygon will fall outside the area of the corresponding measurement pattern 142.

As can be seen from FIG. 1D, the second measurement pattern 142i has a width Xi, the second measurement opening 132i has a width Yi, and Xi-Yi=Wi 0. Similarly, the third measurement pattern 142j has a width Xj, the third measurement opening 132j has a width Yj, and Xj-Yj=Wj 0. A gap G2 is formed between the second measurement opening 132i and the corresponding measurement pattern 142i, and the third measurement opening 132j is still completely shielded by the corresponding measurement pattern 134j. Therefore, the process offset of the first substrate 110 and the second substrate 120 in the selected measurement direction (ie, the direction D1) should fall between (Wi)/2 and (Wj)/2.

Specifically, assuming that the first substrate 110 and the second substrate 120 are accurately assembled, the first measurement structure 130 and the second measurement structure 140 are intended to exhibit the relative positions of FIGS. 1A and 1B. That is, when the process error (alignment offset) does not occur, the center of the contour of the measurement pattern 142i projected to the first substrate 110 and the center of the contour of the corresponding measurement opening 132i projected to the first substrate 110 may be mutually coincide. When the alignment offset occurs in the direction D1 (as shown in FIGS. 1C and 1D), the alignment offset exceeds (Wi)/2, and the measurement opening 132i is not completely obscured by the measurement pattern 142i. Similarly, if the registration offset exceeds (Wj)/2, the measurement opening 132j is not completely obscured by the measurement pattern 142j. Therefore, it is known that the measurement opening 132i is not completely covered by the measurement pattern 142i, and the measurement opening 132j is still completely covered by the measurement pattern 142j, the first substrate 110 and the second substrate 120 are in the direction D1. The process offset (alignment offset) should fall between (Wi)/2 and (Wj)/2.

The dimensional relationship between each measurement pattern 142 of the present embodiment and the corresponding measurement opening 132 is known, so that a gap G can be formed between the measurement pattern 142 and the measurement opening 132 of each measurement pair. It is determined whether the registration offset is greater than the known amount. In addition, the dimensional relationship between the different measurement patterns 142 and the corresponding measurement openings 132 is also different from each other, and thus the degree of the alignment offset can be determined by observing the position of the gap G. In FIG. 1C and FIG. 1D , each measurement opening 132 and the corresponding measurement pattern 142 are defined as a measurement pair, and the embodiment is provided with a first measurement pair to a fifth measurement pair. When the panel device 100' is manufactured, it is possible to first set the amount of error that each measurement pair is intended to represent. For example, the first measurement pair is set to react 1 micron The error amount, the second measurement pair is set to reflect the error amount of 2 micrometers, the third measurement pair is set to reflect the error amount of 3 micrometers, and the fourth measurement pair is set to reflect the error of 4 micrometers. The amount, and the fifth measure pair is set to reflect the amount of error of 5 microns. In the panel device 100', a gap G is formed between the measurement opening 132i of the third measurement pair and the measurement pattern 142i, and the measurement opening 132j of the fourth measurement pair is still completely shielded by the measurement pattern 142j, so It is determined that the registration offset value of the panel device 100' falls between 3 micrometers and 4 micrometers. In this way, the degree of registration offset can be easily judged by the panel device 100' which is completed. When the offset of the alignment is greater than the acceptable specification, it can be considered for repair or scrap. The above numerical values are merely illustrative of how the degree of registration offset is discriminated by the measurement pair, and it is not intended to indicate the size of the measurement pattern 142 and the measurement opening 132.

In the above panel device 100 and panel device 100', the first measurement structure 130 and the second measurement structure 140 may be fabricated by a suitable process to form a desired profile, wherein the process for forming a predetermined profile substantially includes micro Shadow etching process, printing process, etc. In general, the contour and size of the fabricated structure may not be 100% consistent with the predetermined design, which will result in the actual pair when the alignment of the measurement pair described in FIG. 1C and FIG. 1D is determined to have a registration offset. The bit offset is not the same as the preset. In general, when the measurement determines that a registration offset occurs, if the actual alignment offset is less than the preset, a stricter criterion can be provided. However, when the measurement determines that there is a registration offset, if the actual alignment offset is greater than the preset, the judgment criteria will become more relaxed and may not correctly grasp whether the product conforms to the specification.

2A is a top view of a set of detection pairs of a panel device according to an embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along line II-II of FIG. 2A. Referring to FIG. 2A and FIG. 2B simultaneously, the detection pair in the panel device 200 of the present embodiment includes a first measurement structure 230 and a second measurement structure 240 disposed between the first substrate 210 and the second substrate 220, wherein The first measurement structure 230 is disposed on the first substrate 210 and the second measurement structure 240 is disposed on the second substrate 220. The first metrology structure 230 has a measurement opening 232 and the second metrology structure 240 includes a metrology pattern 242. In the present embodiment, the measurement pattern 242 is intended to be made to have a size as shown by the measurement pattern 242A indicated by a broken line. From this, it can be seen that this embodiment describes an aspect in which the actually manufactured size is smaller than a predetermined size.

FIG. 3A is a top view of a set of detection pairs when the panel device of FIG. 2A has a misalignment, and FIG. 3B is a cross-sectional view of the line III-III of FIG. 3A. As can be seen from FIG. 3A and FIG. 3B, if the process accuracy is quite accurate, the second measurement structure 240 has a measurement pattern 242A. At this time, after the alignment offset between the first substrate 210 and the second substrate 220 in the direction D1 exceeds the distance F1, a gap is formed between the measurement opening 232 and the measurement pattern 242. Therefore, when the panel device 200 is detected, when it is observed that a gap is formed in the measurement pair of the group, it can be determined that the degree of the registration offset is greater than the distance F1.

4A is a top view of a set of detection pairs when the panel device of FIG. 2A has a misalignment, and FIG. 4B is a cross-sectional view of the line IV-IV of FIG. 4A. 4A and 4B, the actual size of the measurement pattern 242 is smaller than the size of the measurement pattern 242A to be produced. In such a case, the first substrate 210 and the second After the alignment offset between the substrates 220 in the direction D1 exceeds the distance F2, a gap is formed between the measurement opening 232 and the measurement pattern 242A.

2B, 3B and 4B, the distance F1 is greater than the distance F2. Therefore, when the manufacturing process causes the size of the measurement pattern 242 to be smaller than the size of the predetermined design, the alignment offset when the first substrate 210 and the second substrate 220 are assembled is less than the distance F1, and the measurement pair can be discriminated. . That is to say, although the measurement pair of the present embodiment is intended to indicate the extent to which the registration offset reaches the distance F1, in practice, the measurement opening 232 and the measurement pattern 242 may reflect a smaller degree of error. As such, the design of the first metrology structure 230 and the second metrology structure 240 provides a more stringent standard to determine the degree of alignment offset. In other words, if the actual registration offset is less than the preset when the alignment offset is read, the degree of error is overestimated, which helps to ensure that the quality of the product is within an allowable range. Therefore, the measurement pair of the embodiment can reduce the probability of the defective product passing the detection.

In the above embodiment, the first measurement structure and the second measurement structure are respectively fabricated on the first substrate and the second substrate, but the invention is not limited thereto. 5A is a partial top plan view of a panel device according to another embodiment of the present invention, and FIG. 5B is a cross-sectional view taken along line V-V of FIG. 5A. Referring to FIG. 5A and FIG. 5B simultaneously, the panel device 300 includes a first substrate 310, a second substrate 320, a first measurement structure 330, and a second measurement structure 340. The second substrate 320 and the first substrate 310 are assembled in a face-to-face manner, and thus the outlines of the first substrate 310 and the second substrate 320 are indicated by the same rectangular frame in FIG. 5A. The first measurement structure 330 is disposed on the first substrate 310 and has N measurement openings 332, where N is a positive integer. The second measurement structure configuration 340 is on the second substrate 320, and has N measurement patterns 342. As can be seen from FIG. 5A, the area of each measurement pattern 342 correspondingly shields one of the measurement openings 332 to form a measurement pair. In addition, the first measurement structure 330 and the second measurement structure 340 are both formed on the second substrate 320, and the two are composed of different film layers.

Specifically, the width of each of the measurement patterns 342 is not smaller than the width of the corresponding one of the measurement openings 332 in a selected measurement direction, for example, a direction D1 parallel to the line VV. For example, the i-th measurement pattern 342i has a width Xi, the i-th measurement opening 332i has a width Yi, and Xi-Yi=Wi 0. Similarly, the jth measurement pattern 342j has a width Xj, the jth measurement opening 332j has a width Yj, and Xj-Yj=Wj 0. In addition, in the present embodiment, all of the measurement openings 332 have the same size, but the measurement patterns 342 have different sizes, respectively. Therefore, as can be seen from FIG. 5B, Xi is equal to Xj, and Yi is not equal to Yj, so Wi is not equal to Wj. In addition, the position of the measurement pattern 342i and the position of the measurement opening 332i are aligned with each other such that the overlap width Ai of the measurement pattern 342i overlapping on the one side of the first measurement structure 330 is (Wi)/2. Likewise, the position of the measurement pattern 342j and the position of the measurement opening 332j are aligned with each other such that the overlap width Aj of the measurement pattern 342j overlapping one side of the first measurement structure 330 on one side is (Wj)/2.

5C is a schematic view of a panel device in which a process error occurs during fabrication, and FIG. 5D is a cross-sectional view taken along line V-V of FIG. 5C. Referring to Fig. 5C and Fig. 5D, the panel device 300' has a structure in which the panel device 300 has a misalignment during the manufacturing process. In this embodiment, the first measurement structure 330 and the second measurement structure 340 are made of different film layers, so at least one of the alignment offsets The measurement openings 332 will not be completely obscured by the corresponding measurement pattern 342. As can be seen from FIG. 5C and FIG. 5D, the leftmost two alignment openings 342 in the drawing are not completely shielded and a gap G is formed between the corresponding alignment patterns 342.

Here, the five measurement openings 332 are sized to be the same, and the five measurement patterns 342 are sized differently from each other, wherein the measurement openings 132 are sequentially numbered from the first side S1 to the second side S2. The size of the first measurement pattern 342 to the size of the fifth measurement pattern 342 is designed to be gradually increased, and the size of the first measurement pattern 342 may be the same as the size of one measurement opening 332.

As can be seen from FIG. 5D, a gap G is formed between the second measurement opening 332i and the corresponding measurement pattern 342i, and the third measurement opening 332j is still completely obscured by the corresponding measurement pattern 334j. Therefore, the process offset of the first substrate 110 and the second substrate 120 in the selected measurement direction (ie, the direction D1) should fall between (Wi)/2 and (Wj)/2. The degree of the alignment offset of the first measurement structure 330 and the second measurement structure 340 on the process can be discriminated by the distribution of the gap G.

The above embodiments are all described by measuring that the openings have the same size and the measurement patterns have different sizes, but the invention is not limited thereto. 6A is a partial top plan view of a panel device according to an embodiment of the present invention, and FIG. 6B is a cross-sectional view of the panel device of FIG. 6A taken along line VI-VI. Referring to FIG. 6A and FIG. 6B simultaneously, the panel device 400 includes a first substrate 410, a second substrate 420, a first measurement structure 430, and a second measurement structure 440. The second substrate 420 and the first substrate 410 are assembled in a face-to-face manner, and thus the outlines of the first substrate 410 and the second substrate 420 are represented by the same rectangular frame in FIG. 6A. The first measurement structure 430 is disposed on the first substrate 410 and has N measurements. Opening 432, where N is a positive integer. The second measurement structure configuration 440 is on the second substrate 420 and has N measurement patterns 442. As can be seen from FIG. 6A, the area of each measurement pattern 442 correspondingly shields one of the measurement openings 432. In addition, the first measurement structure 430 and the second measurement structure 440 are respectively fabricated on the first substrate 410 and the second substrate 420.

In the present embodiment, the number of measurement openings 432 is the same as the number of measurement patterns 442, and the measurement openings 432 correspond to the measurement patterns 442 in a one-to-one correspondence to form a measurement pair. Specifically, the present embodiment is different from the embodiment of FIGS. 1A and 1B in that, in the present embodiment, all of the measurement patterns 442 have the same size, but the measurement openings 432 have different sizes, respectively. In a selected measurement direction, such as direction D1, the width of each measurement pattern 442 is not less than the width of one of the corresponding measurement openings 432. For example, the ith measurement pattern 442i has a width Xi, the ith measurement opening 432i has a width Yi, and Xi-Yi=Wi 0. Similarly, the jth measurement pattern 442j has a width Xj, the jth measurement opening 432j has a width Yj, and Xj-Yj=Wj 0. In the present embodiment, the width Xi is equal to the width Xj, and the width Yi is smaller than the width Yj, so Wi is not equal to Wj, but is not limited thereto. In other embodiments, it is not necessary to define whether the width Xi is equal to the width Xj, nor is it necessary to define whether the width Yi is equal to the width Yj. When Wi is not equal to Wj, the measurement opening 432 and the measurement pattern 442 of the different measurement groups can be used to determine the degree of process error. Here, the judgment of the degree of the process error can be referred to the description of the foregoing embodiment, and will not be further described.

7A is a top plan view of a first measurement structure and a second measurement structure in a panel device according to an embodiment of the present invention, and FIG. 7B is a measurement in a region E in FIG. 7A. A partially enlarged schematic view of the pattern 542. Referring to FIG. 7 , the first measurement structure 530 has a plurality of measurement openings 532 , and the second measurement structure 540 includes a plurality of measurement patterns 542 . For the relative relationship and size design of each measurement opening 532 and the corresponding measurement pattern 542, reference may be made to the description of the foregoing embodiment, and details are not described herein. That is, the size and positional relationship of the measurement opening 532 and the measurement pattern 542 may be the same as the measurement opening 132 and the measurement pattern 142, the same as the measurement opening 232 and the measurement pattern 242, and the same as the measurement opening 332. The measurement pattern 342 is the same as the measurement opening 432 and the measurement pattern 442.

In the present embodiment, each measurement pattern 542 has a mark 542A, where the mark 542A can be a word, a number, a symbol, or a combination thereof. The mark 542A can be defined by forming an opening or a thinned area in each of the measurement patterns 542. In addition, as can be seen from FIG. 7, the width of each measurement pattern 542 is equal to or greater than the width of one of the corresponding measurement openings 532. Therefore, the area of each of the measurement patterns 542 and the first measurement structure 530 viewed by the top view (FIG. 7) may overlap to form an overlap area A. At the same time, the sizes of the measurement patterns 542 are different from each other such that the overlapping areas A formed by the different measurement patterns 542 are different from each other. Here, the marks 542A on the different measurement patterns 542 are different from each other.

Specifically, the mark 542A of the present embodiment is a number 0 to 4, wherein these different marks 542A are used to indicate different degrees of alignment offset. For example, in the design of the present embodiment, the measurement pattern 542 having the mark 542A of 0 has the same area as the corresponding measurement opening 532. Meanwhile, the measurement pattern 542 having the mark 542A of 1 to 3 has a larger area than the corresponding measurement opening 532, and the larger the number of the mark 542A is The size of the measurement pattern 542 should be larger. Therefore, when detecting, it is possible to know the degree of the registration offset by observing which gap is present next to the measurement pattern 542 corresponding to the mark 542A.

For example, when a gap is formed between the measurement pattern 542 having the mark 542A of 0 and the corresponding measurement opening 532, the magnitude of the registration offset is greater than zero. When the detection operation is performed, if the set error tolerance range needs to be smaller than the error degree reflected by the measurement pattern 540 having the mark 542A being 3, a gap is formed between the measurement pattern 542 having the mark 542 of 2 and the corresponding measurement opening 532. When there is no gap between the measurement pattern 542 having the mark 542 of 3 and the corresponding measurement opening 532, the product can be passed through the detection. In addition, if a gap is formed between the measurement pattern 542 having the mark 542 of 3 and the corresponding measurement opening 532, the product cannot pass the detection. The above-described setting of the mark 542A can be applied to the measurement structure of each of the foregoing embodiments to facilitate quick interpretation of the detection result.

8A is a top plan view of a first substrate of a panel device according to an embodiment, and FIG. 8B is a top view of a second substrate of the panel device of the embodiment. Referring to FIG. 8A and FIG. 8B , a first functional layer 810 and a first measurement structure 130 are formed on the first substrate 110 , and a second functional layer 820 and a second measurement structure 140 are formed on the second substrate 120 . 8C is a cross-sectional view taken along line VII-VII of the substrate assembly of FIGS. 8A and 8B, and FIG. 8D is a cross-sectional view taken along line VIII-VIII after the substrate of FIGS. 8A and 8B is assembled. As shown in FIG. 8C and FIG. 8D, the first substrate 110 and the second substrate 120 may be assembled to form the panel device 800, wherein the first functional layer 810 and the first measurement structure 130 are the same film layer, and the second function. At least one component of layer 820 is the same film layer as second measurement structure 140. For example, the first functional layer 810 may be a light shielding matrix in a color filter layer, and the second functional layer 820 may be an active device array, but not limited thereto.

When the panel device 800 is a display panel, the second functional layer 820 disposed on the second substrate 120 includes, for example, a pixel electrode PE, a signal line DL, and a signal shielding line 822, but not limited thereto, wherein the second functional layer 820 Components that are not directly depicted in the figures, such as scan lines, active components, storage capacitor structures, etc., may also be included. Here, the area between the adjacent two pixel electrodes PE cannot be normally displayed, but needs to be shielded by the light shielding matrix 812 and the signal shielding line 822. In general, the size of the shading matrix 812 needs to cover at least the gap 824 between adjacent two signal shielding lines 822. Therefore, the width of the shading matrix 812 is typically set to be no less than the width of the gap 824 to avoid light leakage situations. In the present embodiment, the width of the shading matrix 812 exceeds the width of the gap 824 by a distance R to ensure that the gap 824 is completely obscured.

The alignment of the first substrate 110 and the second substrate 120 during the assembly process may occur, which causes the distance R to be reduced, even exposing the gap 824. Once the gap 824 is exposed, light leakage will occur, which may result in poor quality of the display panel. Therefore, the panel device 800 is provided with the first measurement structure 130 and the second measurement structure 140 in FIG. 8D. In particular, the second measurement structure 140 is formed by the same film layer as the signal shielding line 822 of the second functional layer 820. It is effective to detect whether the degree of the alignment offset is out of the allowable range. The method for determining the degree of alignment offset by the first measurement structure 130 and the second measurement structure 140 can be referred to the description of the foregoing embodiment. In addition, the first measurement structure 130 and the second measurement node in FIGS. 8A to 8D The structure 140 can be replaced by the first and second measurement structures of any of the preceding embodiments.

In this embodiment, if the width of the signal shielding line 822 is smaller than the predetermined design size during the process of fabricating the second functional layer 820, the distance R may be reduced, which makes the degree of alignment offset that the panel device 800 can tolerate. The reduction. At this time, according to the related description of FIGS. 2A, 2B, 3A, 3B, 4A, 4B, the size of the second measurement structure 240 also decreases, and the degree of deviation of the measurement pattern 242 is less than a predetermined degree. It is reflected that a registration offset occurs, which helps to correctly determine whether the offset of the alignment exceeds the allowable range.

In summary, the present invention designs a measuring structure composed of different film layers in the panel device to have different overlapping areas (or overlapping widths). When two substrates are assembled or two different patterns of the film are formed, a gap is formed between the measurement structures to reflect the occurrence of the alignment offset. In addition, the measurement structure can constitute a plurality of measurement groups, and the different measurement groups are designed to reflect different alignment offset degrees. Therefore, as long as the measurement group in which the gap exists is detected during the detection, it is possible to efficiently know whether the degree of the registration offset exceeds the allowable range. In at least one embodiment, when the size of the component after patterning of the single film layer is smaller than the predetermined design, the degree of alignment offset of the measurement group is also reduced, so that the actual alignment offset can be faithfully reflected. situation.

100‧‧‧ Panel device

110‧‧‧First substrate

120‧‧‧second substrate

130‧‧‧First measurement structure

132‧‧‧Measurement opening

142‧‧‧Measurement pattern

D1‧‧ Direction

I-I‧‧‧ cut line

Claims (11)

A panel device includes: a first substrate; a second substrate disposed in a face-to-face manner with the first substrate; a first measurement structure disposed on one of the first substrate and the second substrate, and Having N measurement openings, wherein N is a positive integer; and a second measurement structure disposed on one of the first substrate and the second substrate, and having N measurement patterns, each of the measurement patterns The area correspondingly shields one of the measurement openings and the width of each of the measurement patterns in a selected measurement direction is not less than a width of the corresponding one of the measurement openings, wherein the first measurement structure and the second The measuring structure is composed of different film layers, wherein the width of the i-th measuring pattern is Xi, and the width of the i-th measuring opening is Yi, Xi-Yi=Wi 0, and the width of the jth measurement pattern is Xj, the width of the jth measurement opening Yj, Xj-Yj=Wj 0, i and j are each 1~N, i is not equal to j, and Wi is not equal to Wj. The panel device of claim 1, wherein the widths of the N measurement patterns are inconsistent. The panel device of claim 1, wherein the widths of the N measurement openings are inconsistent. The panel device of claim 1, wherein each of the measurement patterns has a contour of the same shape but a different size from the corresponding one of the measurement openings. The panel device of claim 4, wherein the contour is a polygon, and at least one side of the polygon falls within a corresponding area of the measurement pattern. A panel device includes: a first substrate; a second substrate disposed in a face-to-face manner with the first substrate; a first measurement structure disposed on one of the first substrate and the second substrate, and Having N measurement openings, wherein N is a positive integer; and a second measurement structure disposed on one of the first substrate and the second substrate, and having N measurement patterns, each of the measurement patterns The area correspondingly shields one of the measurement openings and the width of each of the measurement patterns in a selected measurement direction is not less than a width of the corresponding one of the measurement openings, wherein the first measurement structure and the second The measurement structure is composed of different film layers, wherein at least one of the measurement openings is not completely shielded by the corresponding measurement pattern to form a gap. A panel device includes: a first substrate; a second substrate disposed in a face-to-face manner with the first substrate; a first measurement structure disposed on one of the first substrate and the second substrate, and Having N measurement openings, wherein N is a positive integer; and a second measurement structure disposed on one of the first substrate and the second substrate, and having N measurement patterns, each of the measurement patterns The area correspondingly shields one of the measurement openings and the width of each of the measurement patterns in a selected measurement direction is not less than a width of the corresponding one of the measurement openings, wherein the first measurement structure and the The second measuring structure is composed of different film layers, wherein the first measuring structure and the second measuring structure are respectively located on the first substrate and the second substrate. A panel device includes: a first substrate; a second substrate disposed in a face-to-face manner with the first substrate; a first measurement structure disposed on one of the first substrate and the second substrate, and Having N measurement openings, wherein N is a positive integer; and a second measurement structure disposed on one of the first substrate and the second substrate, and having N measurement patterns, each of the measurement patterns The area correspondingly shields one of the measurement openings and the width of each of the measurement patterns in a selected measurement direction is not less than a width of the corresponding one of the measurement openings, wherein the first measurement structure and the second The measuring structure is composed of different film layers, wherein each of the measuring patterns has a width larger than a width of the corresponding one of the measuring openings and overlaps with the first measuring structure to form an overlapping area, and each of the measuring patterns has a The marks, the overlapping areas formed by the different measurement patterns are different from each other and the marks of the different measurement patterns are different from each other. A method of detecting a panel device, comprising: providing a panel device according to any one of claims 1 to 8; and determining whether a measurement opening is completely shielded from an area of the corresponding measurement pattern to form a gap If yes, it means that there is a process alignment offset of the panel device. The method for detecting a panel device according to claim 9, wherein the width of the i-th measurement pattern is Xi, and the width of the i-th measurement opening is Yi, Xi-Yi=Wi 0, and the width of the jth measurement pattern is Xj, the width of the jth measurement opening Yj, Xj-Yj=Wj 0, i and j are each 1 to N, j is not equal to i, and Wj is not equal to Wi, the ith measurement opening is not filled by the ith measurement pattern, and the jth measurement opening is The process offset of the first substrate and the second substrate in the selected measurement direction falls between (Wi)/2 and (Wj)/2. The method for detecting a panel device according to claim 9, wherein each of the measurement patterns of the panel device has a mark, and the width of each of the measurement patterns is equal to or greater than a width of the corresponding one of the measurement openings. And overlapping with the first measuring structure to form an overlapping area, the overlapping areas formed by the different measuring patterns are different from each other and the markings of the different measuring patterns are different from each other, and the detecting method of the panel device comprises: according to the gap Corresponding to the mark on the measurement pattern to determine the extent of the process offset.