CN104576615B - panel device and detection method thereof - Google Patents
panel device and detection method thereof Download PDFInfo
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- CN104576615B CN104576615B CN201510004609.0A CN201510004609A CN104576615B CN 104576615 B CN104576615 B CN 104576615B CN 201510004609 A CN201510004609 A CN 201510004609A CN 104576615 B CN104576615 B CN 104576615B
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- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 238000005259 measurement Methods 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000012545 processing Methods 0.000 claims description 15
- 238000013507 mapping Methods 0.000 claims description 3
- 230000012447 hatching Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000010410 layer Substances 0.000 description 12
- 239000002346 layers by function Substances 0.000 description 12
- 238000013461 design Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 6
- 235000012364 Peperomia pellucida Nutrition 0.000 description 2
- 240000007711 Peperomia pellucida Species 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Abstract
The invention discloses a panel device and a detection method thereof. The second substrate is assembled with the first substrate in a face-to-face manner. The first measuring structure is arranged on one of the first substrate and the second substrate and is provided with N measuring openings, wherein N is a positive integer. The second measuring structure is arranged on one of the first substrate and the second substrate and is provided with N measuring patterns. The area of each measuring pattern correspondingly covers one of the measuring openings. The width of each measuring pattern in a selected measuring direction is not less than the width of one corresponding measuring opening, wherein the first measuring structure and the second measuring structure are composed of different film layers. The first measurement structure and the second measurement structure of the invention can be used for accurately judging whether the panel device has process alignment deviation.
Description
Technical field
The invention relates to a kind of face equipment and its detection method, and in particular to one kind by two substrate in batch
Vertical face equipment and its detection method.
Background technology
With the development of information technology and manufacture of semiconductor ability, various product on the market is in reaction rate, processing effect
All constantly lifting to make qualification rate and fabrication error by quite rigorous requirement in the conditions such as energy, display quality.With aobvious
Show for panel, display panel is typically to be formed by two or more than two substrate in batch are vertical, and it makes for this thereon
There are different components.During two or more substrate in batch are stood in together, if the error in contraposition is excessive, final production will be made
Product can not meet the demand in market.Therefore, when group founds multiple substrates, it is desirable to have appropriate method detects that contraposition is inclined with means
Move and whether exceed tolerable limit.In addition, when making different elements on substrate, the manufacturing process of different elements is not necessarily same
Step, therefore the error in contraposition may also be produced, this kind of error also tends to need to be required within certain degree to meet
The demand in market.
The content of the invention
The present invention provides a kind of face equipment there is provided measuring structure for correctly detecting the degree of contraposition skew.
The present invention provides a kind of detection method of face equipment, can detect whether contraposition skew exceeds really and allow model
Enclose.
The face equipment of the present invention includes a first substrate, a second substrate, one first measuring structure and one second amount
Geodesic structure.Second substrate is vertical with face-to-face mode group with first substrate.First measuring structure is configured at first substrate and the second base
In plate one of which, and opening is measured with N number of, wherein N is positive integer.Second measuring structure is configured at first substrate and second
In substrate one of which, and with N number of measurement pattern.Each area for measuring pattern accordingly covered one of measure and opened
Mouthful.Each width for measuring pattern is not less than corresponding one of width for measuring opening in a selected measurement direction, wherein
First measuring structure is made up of from the second measuring structure different film layers.
In one embodiment of this invention, the width of above-mentioned i-th of measurement pattern is Xi, the width of i-th of measurement opening
Yi, Xi-Yi=Wi >=0.The width of j-th of measurement pattern is Xj, the width Yj of j-th of measurement opening, Xj-Yj=Wj >=0.i
1~N is respectively with j, i is not equal to j, and Wi is not equal to Wj.
In one embodiment of this invention, above-mentioned N number of width for measuring pattern is inconsistent.
In one embodiment of this invention, above-mentioned N number of width for measuring opening is inconsistent.
In one embodiment of this invention, each pattern that measures has same shape but with corresponding one of opening that measures
Various sizes of profile.
In one embodiment of this invention, above-mentioned profile is polygon, and polygonal at least while falling in corresponding amount
In the area of mapping case.
In one embodiment of this invention, at least one to measure opening not completely obscured and formed by corresponding measurement pattern
One gap.
In one embodiment of this invention, the first measuring structure and the second measuring structure are located at first substrate and second respectively
On substrate.
In one embodiment of this invention, each width for measuring pattern is more than corresponding one of width for measuring opening
And it is overlapping with the first measuring structure to form an overlapping area.Each pattern that measures has a mark.Difference measures what pattern was constituted
Overlapping area it is different from each other and also it is different measure pattern mark it is different from each other.
A kind of detection method of face equipment of the present invention, including judge whether there is measurement opening in being put in above-mentioned panel not
By it is corresponding measurement pattern area it is completely obscured and formed a gap, if, then it represents that face equipment exist a processing procedure contraposition
Skew.
In one embodiment of this invention, i-th measurement pattern width be Xi, i-th measure opening width Yi,
Xi-Yi=Wi >=0, and j-th measurement pattern width be Xj, j-th measure opening width Yj, Xj-Yj=Wj >=0, i with
J is respectively 1~N, and j is not equal to i, and Wj is not equal to Wi.I-th of measurement opening does not measure pattern by i-th and not filled up, j-th of amount
Survey opening to be filled up by j-th of measurement pattern, then processing procedure of the first substrate with second substrate in selected measurement direction, which is aligned, offsets
For (Wi)/2 to (Wj)/2.
In one embodiment of this invention, each width for measuring pattern is more than corresponding one of width for measuring opening
And it is overlapping with the first measuring structure to form an overlapping area, and different those overlapping areas for measuring pattern composition are each other.
Each measurement pattern of different panels device has a mark, and the mark that difference measures pattern is different from each other.The inspection of face equipment
Survey method includes the degree that processing procedure contraposition skew is judged according to the mark on the measurement pattern corresponding to gap.
There is the first measuring structure for being made up of different film layers and the based on above-mentioned, in the face equipment of the embodiment of the present invention
Two measuring structures, wherein the measurement opening of the first measuring structure corresponds respectively to the measurement pattern and each measurement figure of the second amount structure
The size of case is not less than the corresponding size for measuring opening.Consequently, it is possible to which the first measuring structure can be used with the second measuring structure
Accurately to judge that face equipment aligns skew with the presence or absence of processing procedure.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Brief description of the drawings
Figure 1A is the local upper schematic diagram of the face equipment of one embodiment of the invention.
Figure 1B is diagrammatic cross-section of Figure 1A face equipment along hatching line I-I.
Fig. 1 C and Fig. 1 D represent the schematic diagram that the face equipment of fabrication errors occurs during group is vertical.
Fig. 2A for one embodiment of the invention face equipment one of which detection to upper schematic diagram.
Fig. 2 B are Fig. 2A hatching line II-II diagrammatic cross-section.
Fig. 3 A for Fig. 2A face equipment exist contraposition skew when one of which detection to upper schematic diagram.
Fig. 3 B are Fig. 3 A hatching line III-III diagrammatic cross-section.
Fig. 4 A for Fig. 2A face equipment exist contraposition skew when one of which detection to upper schematic diagram.
Fig. 4 B are Fig. 4 A hatching line IV-IV diagrammatic cross-section.
Fig. 5 A are the local upper schematic diagram of the face equipment of another embodiment of the present invention.
Fig. 5 B are Fig. 5 A hatching line V-V diagrammatic cross-section.
Fig. 5 C are the schematic diagram for the face equipment that fabrication errors occur in manufacturing process.
Fig. 5 D are Fig. 5 C hatching line V-V diagrammatic cross-section.
Fig. 6 A are the local upper schematic diagram of the face equipment of one embodiment of the invention.
Fig. 6 B are diagrammatic cross-section of Fig. 6 A face equipment along hatching line VI-VI.
Fig. 7 A are that the first measuring structure in the face equipment of one embodiment of the invention and the upper of the second measuring structure regard signal
Figure.
Fig. 7 B are the close-up schematic view for measuring pattern 542 in region E in Fig. 7 A.
Fig. 8 A are the upper schematic diagram of the first substrate of the face equipment of an embodiment.
Fig. 8 B are the upper schematic diagram of the second substrate of the face equipment of an embodiment.
Two substrate in batch that Fig. 8 C are Fig. 8 A and Fig. 8 B are stood into after face equipment, are illustrated along hatching line VII-VII section
Figure.
After two substrate in batch that Fig. 8 D are Fig. 8 A and Fig. 8 B are stood, along hatching line VIII-VIII diagrammatic cross-section.
Wherein, reference
100、100’、200、300、300’、400、800：Face equipment
110、210、310、410：First substrate
120、220、320、420：Second substrate
130、230、330、430、530：First measuring structure
132、132i、132j、232、332、332i、332j、432、432i、432j、532：Measure opening
140、240、340、440、540：Second measuring structure
142、142i、142j、242、242A、342、342i、342j、442、442i、442j、542：Measure pattern
542A：Mark
810：First functional layer
812：Shading matrix
820：Second functional layer
822：Signal shielding line
824、G、G1、G2：Gap
A：Overlapping area
Ai、Aj：Overlapping widths
D1：Direction
DL：Signal wire
E：Region
F1、F2、R：Distance
I-I、II-II、III-III、IV-IV、V-V、VI-VI、VII-VII、VIII-VIII：Hatching line
PE：Pixel electrode
S1：First side
S2：Second side
Xi、Xj、Yi、Yj：Width
Embodiment
Technical solution of the present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings, to be further understood that
The purpose of the present invention, scheme and effect, but it is not intended as the limitation of scope of the appended claims of the present invention.
Figure 1A is the local upper schematic diagram of the face equipment of one embodiment of the invention, and Figure 1B is Figure 1A face equipment
Along hatching line I-I diagrammatic cross-section.Referring to Figure 1A and Figure 1B, face equipment 100 includes first substrate 110, the second base
Plate 120, the first measuring structure 130 and the second measuring structure 140.Second substrate 120 is with first substrate 110 in face-to-face mode
Group is vertical, therefore represents the profile of first substrate 110 and second substrate 120 in Figure 1A with identical rectangle frame.First measuring structure
130 are configured on first substrate 110, and measure opening 132 with N number of, and wherein N is positive integer.Second measuring structure 140 is configured
In on second substrate 120, and with N number of measurement pattern 142.From Figure 1A, each area for measuring pattern 142 accordingly covers
It is firmly one of to measure opening 132.In addition, the first measuring structure 130 and the second measuring structure 140 due to being made in first respectively
On substrate 110 and second substrate 120, both are made up of different film layers.But, in other examples, the first measuring structure
130 and second measuring structure 140 may be selected equally be made on first substrate 110 or be equally made on second substrate 120,
But both are still made up of different film layers.
In the present embodiment, measure opening 132 number with measure pattern 142 number it is identical, and measure opening 132 and
Measure the man-to-man correspondence of pattern 142 and constitute a measurement group.For Figure 1A and Figure 1B, above-mentioned N is 5.In addition, i-th
Measure pattern 142i and measure opening 132i corresponding to i-th, and measure pattern 142j for j-th and correspond to j-th of measurement opening
132j, wherein i and j are respectively 1~N, and i is not equal to j.Meanwhile, the first measuring structure 130 and the second measuring structure 140 are all
Made by shading material, shading material is, for example, shading resin, metal, photoresistance or its combination.Therefore, it is each to measure opening 132
All light-permeables, the and each area of measurement opening 132 can be covered by corresponding one measurement pattern 142 in figure ia.
In a selected measurement direction, such as, parallel on hatching line I-I direction D1, each width for measuring pattern 142 is not small
In corresponding one of width for measuring opening 132.For example, measuring pattern 142i i-th has width Xi, i-th
Measuring opening 132i has width Yi, and Xi-Yi=Wi >=0.Similarly, j-th of measurement pattern 142j has width Xj, jth
The individual opening 132j that measures has width Yj, and Xj-Yj=Wj >=0.In addition, in the present embodiment, all measurement openings 132 have
There is identical size, but measure pattern 142 has different sizes respectively.In other words, Xi is equal to Xj, and Yi is not equal to Yj, because
This Wi is not equal to Wj.
In figure ia, each pattern 142 that measures has same shape different chis from corresponding one of opening 132 that measures
Very little profile.In Figure 1A and Figure 1B, this profile is polygon, and all sides of polygon all fall in corresponding measurement pattern 142
Area in or be overlapped in measure pattern 142 profile.Specifically, pattern 142i position is measured with measuring opening 132i
Position it is aligned with each other, therefore measure the pattern 142i overlapping widths Ai that side is overlapped in the first measuring structure 130 wherein be
(Wi)/2.Similarly, the position and measurement opening 132j position for measuring pattern 142j are aligned with each other, therefore measure pattern 142j
The overlapping widths Aj that side is overlapped in the first measuring structure 130 wherein is (Wj)/2.Meanwhile, each pattern 142 that measures is overlapped in
The overlapping area or overlapping widths of first measuring structure 132 are also different.Such design can be for detecting the first base
The degree of the fabrication errors occurred during 120 groups of plate 110 and second substrate are vertical.
For example, Fig. 1 C and Fig. 1 D represent the schematic diagram that the face equipment of fabrication errors occurs during group is vertical.Figure
If contraposition skew, possible pie graph 1C and Fig. 1 D structure occur during contraposition for 1A and Figure 1B face equipment 100.
Specifically, in Fig. 1 C and Fig. 1 D, the component that face equipment 100 ' has is same as the component of face equipment 100, but component
Between relative position be different from face equipment 100.
Here, five measure opening 132 be designed and sized to identical, and five measurement patterns 142 are designed and sized to that
This is different, if wherein these measurement openings 132 are sequentially numbered by the first side S1 to the second side S2, first measurement pattern
142 size to the 5th measurement pattern 142 be designed and sized to gradually increase, and first measurement pattern 142 size can
To be same as a size for measuring opening 132.
First substrate 110 there occurs the contraposition skew parallel to direction D1 with second substrate 120 during group is vertical, will
So that at least one measure opening 132 not by it is corresponding measurement pattern 142 it is completely obscured and formed a clearance G.In the present embodiment
In, first measurement opening 132 is completely obscured all not by corresponding measurement pattern 142 with second measurement opening 132, and distinguishes
Clearance G 1 and clearance G 2 are defined, and the 3rd to the 5th measures opening 132 all completely by corresponding measurement pattern 142 institute
Masking.Now, polygonal at least one side for measuring opening 132 will fall outside the area of corresponding measurement pattern 142.
From Fig. 1 D, second measures pattern 142i and has width Xi, and second measures opening 132i and have width Yi,
And Xi-Yi=Wi >=0.Similarly, the 3rd measurement pattern 142j has width Xj, and the 3rd measures opening 132j and have width
Yj, and Xj-Yj=Wj >=0.Second measures and is formed with clearance G 2 between opening 132i and corresponding measurement pattern 142i, and the
Three measure opening 132j and are still covered completely by corresponding measurement pattern 134j.Therefore, first substrate 110 and second substrate 120
Processing procedure skew in selected measurement direction (i.e. direction D1) be able to should fall in (Wi)/2 to (Wj)/2.
Specifically, it is assumed that first substrate 110 and second substrate 120 are accurately organized immediately, the first measuring structure 130 and the
Two measuring structures 140 are predetermined will to be presented Figure 1A and Figure 1B relative position.That is, not occurring fabrication errors, (contraposition is inclined
Move) when, measurement pattern 142i is projected to the center of the profile of first substrate 110 and the corresponding opening 132i that measures and projected to first
The center of the profile of substrate 110 can coincide with one another.During the contraposition skew occurred in the direction di (such as Fig. 1 C and 1D), contraposition skew
Amount exceedes (Wi)/2, then measurement opening 132i would not fully be measured pattern 142i and be covered.Similarly, offset is aligned
More than (Wj)/2, then measure opening 132j and would not fully be measured pattern 142j and covered.Therefore, by measuring opening 132i
It is not measured pattern 142i fully to be covered, and measures opening 132j and be still fully measured the situation that pattern 142j is covered
Understand, the processing procedure skew (contraposition is offset) of first substrate 110 and second substrate 120 in the direction di be able to should fall (Wi)/2 to
(Wj)/2。
Each measurement pattern 142 of the present embodiment is known with the corresponding size relationship for measuring opening 132, therefore can
With by it is each measure to measurement pattern 142 and measure opening 132 between whether form clearance G judge contraposition offset whether
More than the known quantity.In addition, different measurement patterns 142 are also different from each other with the corresponding size relationship for measuring opening 132,
Therefore it can judge to align the degree of offset by the position of observation clearance G.For Fig. 1 C and Fig. 1 D, each is measured
Opening 132 is defined as a measurement pair with the corresponding pattern 142 that measures, then the present embodiment is provided with the first measurement to the 5th measurement
It is right.When making face equipment 100 ', each measure to making a reservation for the margin of error to be represented can be first set.For example, the first measurement pair
It is set as reacting 1 micron of the margin of error, second measures the margin of error to being set as reacting 2 microns, the 3rd measurement pair
It is set as reacting 3 microns of the margin of error, the 4th measures the margin of error to being set as reacting 4 microns, and the 5th measures
The margin of error to being set as reacting 5 microns.In face equipment 100', the 3rd measure to measurement opening 132i with measure scheme
Be formed with clearance G between case 142i, and the 4th measure to measurement opening 132j to be still measured pattern 142j completely obscured, therefore
It can be determined that out that the contraposition deviant of face equipment 100 ' falls between 3 microns to 4 microns.Consequently, it is possible to can be vertical by group
Interpretation goes out to align degrees of offset the face equipment 100 ' of completion easily.When aligning degrees of offset and being more than the specification that can be held i.e.
It is contemplated that being repaired or being scrapped.How above-mentioned numerical value is merely illustrative of by measuring to determining contraposition degrees of offset, and
It is not intended to represent that measure pattern 142 needs as limit with measuring the size of opening 132.
In above-mentioned face equipment 100 and face equipment 100 ', the first measuring structure 130 and the second measuring structure 140 can
To be made by suitable processing procedure to form required profile, wherein the processing procedure that can form predetermined profile generally comprises lithographic
Etch process, printing process etc..In general, the profile of the structure completed not necessarily can absolutely coincide with size
In predetermined design, this will cause the measurement described by Fig. 1 C and Fig. 1 D to judging to have during contraposition skew generation, actual
Contraposition degrees of offset is not inconsistent with presetting.In general, measure to judging to have during contraposition skew generation, if actual contraposition is inclined
Shifting degree, which is less than, to be preset, then can provide more strict criterion.But, measure to judging to have contraposition skew hair
When raw, preset if actual contraposition degrees of offset is more than, criterion will become more loose and possibly can not correctly slap
Hold whether product meets specification.
Fig. 2A for one embodiment of the invention face equipment one of which detection to upper schematic diagram, and Fig. 2 B for figure
2A hatching line II-II diagrammatic cross-section.Referring to Fig. 2A and Fig. 2 B, the detection in the face equipment 200 of the present embodiment
To the first measuring structure 230 and the second measuring structure 240 including being configured between first substrate 210 and second substrate 220, its
In the first measuring structure 230 be configured on first substrate 210 and the second measuring structure 240 is configured on second substrate 220.First
Measuring structure 230, which has, measures opening 232, and the second measuring structure 240 includes measuring pattern 242.In the present embodiment, measure
Pattern 242 makes a reservation for shown in the measurement pattern 242A that the size to be made should be represented such as dotted line.It follows that the present embodiment description is real
The small aspect of the more predetermined size of size that border makes.
When there is contraposition skew for Fig. 2A face equipment in Fig. 3 A one of which detection to upper schematic diagram, and Fig. 3 B are
Fig. 3 A hatching line III-III diagrammatic cross-section.From Fig. 3 A and Fig. 3 B, if processing procedure precision is quite accurate, second measures
Structure 240, which has, measures pattern 242A.Now, the contraposition skew between first substrate 210 and second substrate 220 in the direction di
Amount exceedes after F1, and gap will be formed between opening 232 and measurement pattern 242 by measuring.Therefore, detection panel device
When 200, it was observed that when the measurement centering of this group is formed with gap, it can be determined that the degree for being contraposition skew is more than apart from F1.
When there is contraposition skew for Fig. 2A face equipment in Fig. 4 A one of which detection to upper schematic diagram, and Fig. 4 B are
Fig. 4 A hatching line IV-IV diagrammatic cross-section.From Fig. 4 A and Fig. 4 B, the actual size for measuring pattern 242 is less than predetermined want
The size for measuring pattern 242A of making.It that case, in direction D1 between first substrate 210 and second substrate 220
On contraposition offset exceed after F2, gap will be formed between pattern 242A by measuring opening 232 and measuring.
From Fig. 2 B, Fig. 3 B and Fig. 4 B, it is more than apart from F1 apart from F2.Therefore, when manufacturing process causes to measure pattern 242
Size when being less than the size of predetermined design, the contraposition skew of 220 groups of first substrate 210 and second substrate immediately is less than distance
F1, this is measured to can just be judged to not come out.Although that is, the measurement pair of the present embodiment is predetermined to be used to indicate that contraposition is inclined
Move on to up to the degree apart from F1, but under practical situation, smaller error journey can be reflected by measuring opening 232 with measuring pattern 242
Degree.Consequently, it is possible to which the design of the first measuring structure 230 and the second measuring structure 240 provides tightened up standard to determine pair
The degree of position skew.In other words, if interpretation goes out contraposition skew, actual contraposition offset, which is less than, to be preset, then to miss
Poor degree is overestimated, and this helps to ensure the quality of product all in permissible scope.Therefore, the measurement pair of the present embodiment can
To reduce probability of the defective work by detection.
First measuring structure and the second measuring structure are made on first substrate and second substrate by above-described embodiment respectively,
But the present invention is not limited.Fig. 5 A are the local upper schematic diagram of the face equipment of another embodiment of the present invention, and Fig. 5 B
For Fig. 5 A hatching line V-V diagrammatic cross-section.Referring to Fig. 5 A and Fig. 5 B, face equipment 300 include first substrate 310,
Second substrate 320, the first measuring structure 330 and the second measuring structure 340.Second substrate 320 and first substrate 310 with face of
Face mode group is stood, therefore represents the profile of first substrate 310 and second substrate 320 in Fig. 5 A with identical rectangle frame.First amount
Geodesic structure 330 is configured on first substrate 310, and measures opening 332 with N number of, and wherein N is positive integer.Second measuring structure
Configuration 340 is on second substrate 320, and with N number of measurement pattern 342.From Fig. 5 A, each area pair for measuring pattern 342
Cover one of measurement opening 332 with answering and constitute a measurement pair.In addition, the first measuring structure 330 and second is measured
Structure 340 is all made on second substrate 320, and both are made up of different film layers.
Specifically, in a selected measurement direction, such as, parallel on hatching line V-V direction D1, pattern 342 is respectively measured
Width is not less than corresponding one of width for measuring opening 332.For example, i-th of measurement pattern 342i has width
Xi, i-th of measurement opening 332i has width Yi, and Xi-Yi=Wi >=0.Similarly, j-th of measurement pattern 342j has width
Xj is spent, j-th of measurement opening 332j has width Yj, and Xj-Yj=Wj >=0.In addition, in the present embodiment, all measurements
Opening 332 is of the same size, but measure pattern 342 has different sizes respectively.Therefore, it is equal to from Fig. 5 B, Xi
Xj, and Yi is not equal to Yj, therefore Wi is not equal to Wj.In addition, measure pattern 342i position with measure opening 332i position that
This alignment so that it is (Wi)/2 to measure the pattern 342i overlapping widths Ai that side is overlapped in the first measuring structure 330 wherein.Together
Sample, it is aligned with each other with the position that measures opening 332j to measure pattern 342j position so that measurement pattern 342j wherein one
The overlapping widths Aj for stressing to be laminated on the first measuring structure 330 is (Wj)/2.
Is the schematic diagram of the face equipment of fabrication errors occurs in manufacturing process for Fig. 5 C, and Fig. 5 D are Fig. 5 C hatching line V-
V diagrammatic cross-section.Fig. 5 C and Fig. 5 D are refer to, face equipment 300 ' is that face equipment 300 is aligned in manufacturing process
The structure having after skew.In the present embodiment, the first measuring structure 330 from the second measuring structure 340 by different film layers
Make, therefore under contraposition skew, at least one measures opening 332 and will not completely hidden by corresponding measurement pattern 342
Cover.In Fig. 5 C and Fig. 5 D, drawing two of leftmost side contraposition openings 342 it is completely shielded and with corresponding to bitmap
Clearance G is formed between case 342.
Here, five measure opening 332 be designed and sized to identical, and five measurement patterns 342 are designed and sized to that
This is different, if wherein these measurement openings 132 are sequentially numbered by the first side S1 to the second side S2, first measurement pattern
342 size to the 5th measurement pattern 342 be designed and sized to gradually increase, and first measurement pattern 342 size can
To be same as a size for measuring opening 332.
From Fig. 5 D, second measures and is formed with clearance G between opening 332i and corresponding measurement pattern 342i, and the
Three measure opening 332j and are still covered completely by corresponding measurement pattern 334j.Therefore, first substrate 110 and second substrate 120
Processing procedure skew in selected measurement direction (i.e. direction D1) be able to should fall in (Wi)/2 to (Wj)/2.By the distribution feelings of clearance G
Shape can just determine the degree of the contraposition skew of the first measuring structure 330 and the second measuring structure 340 on processing procedure.
All to measure opening, with identical size, measuring pattern, there are above-described embodiment different sizes to illustrate, but this hair
It is bright to be not limited.Fig. 6 A are the local upper schematic diagram of the face equipment of one embodiment of the invention, and Fig. 6 B are Fig. 6 A face
Diagrammatic cross-section of the panel assembly along hatching line VI-VI.Referring to Fig. 6 A and Fig. 6 B, face equipment 400 includes first substrate
410th, second substrate 420, the first measuring structure 430 and the second measuring structure 440.Second substrate 420 and first substrate 410 with
Face-to-face mode group is stood, therefore represents the profile of first substrate 410 and second substrate 420 in Fig. 6 A with identical rectangle frame.The
One measuring structure 430 is configured on first substrate 410, and measures opening 432 with N number of, and wherein N is positive integer.Second measures
Structure configuration 440 is on second substrate 420, and with N number of measurement pattern 442.From Fig. 6 A, each face for measuring pattern 442
Product accordingly covered one of measurement opening 432.In addition, the first measuring structure 430 and the second measuring structure 440 are due to dividing
It is not made on first substrate 410 and second substrate 420.
In the present embodiment, measure opening 432 number with measure pattern 442 number it is identical, and measure opening 432 and
Measure the man-to-man correspondence of pattern 442 and constitute a measurement pair.Specifically, the present embodiment is different from Figure 1A and Figure 1B reality
Apply example part and be that in the present embodiment, all measurement patterns 442 are of the same size, but measure opening 432 and distinguish
With different sizes.In a selected measurement direction, such as direction D1, each width for measuring pattern 442 not less than it is corresponding its
In one measure opening 432 width.For example, i-th of measurement pattern 442i has width Xi, i-th of measurement opening
432i has width Yi, and Xi-Yi=Wi >=0.Similarly, j-th of measurement pattern 442j has width Xj, and j-th of measurement is opened
Mouth 432j has width Yj, and Xj-Yj=Wj >=0.For the present embodiment, width Xi is equal to width Xj, and width Yi is small
In width Yj, so Wi is not equal to Wj, but it is not limited.In other embodiments, whether it is equal to without restriction width Xi
Width Xj, also need not limit whether width Yi is equal to width Yj.When Wi is not equal to Wj, the measurement opening 432 of different measurement groups with
Measuring pattern 442 can be for judging fabrication errors degree.Here, the judgement of fabrication errors degree is referred to foregoing implementation
The explanation of example, is not repeated separately.
Fig. 7 A are that the first measuring structure in the face equipment of one embodiment of the invention and the upper of the second measuring structure regard signal
Figure, and Fig. 7 B are the close-up schematic view of the measurement pattern 542 in region E in Fig. 7 A.It refer to Fig. 7, the first measuring structure
530 have multiple measurement openings 532, and the second measuring structure 540 includes multiple measurement patterns 542.Each measure opening 532 with
The corresponding relativeness for measuring pattern 542 is referred to the explanation of previous embodiment with size design, does not repeat separately herein.
That is, measuring opening 532 can be same as measuring opening 132 and measurement figure with measuring the size of pattern 542 with position relationship
Case 142, it is same as measuring opening 232 and measures pattern 242, is same as measuring opening 332 and pattern 342 or is same as with measurement
Opening 432 is measured with measuring pattern 442.
In the present embodiment, each pattern 542 that measures has mark 542A, wherein mark 542A can be word, numeral,
Symbol or its combination.Mark 542A can be by formation is open in each measurement pattern 542 or thinning area defines and.Separately
Outside, as shown in Figure 7, each width for measuring pattern 542 is equal to or more than corresponding one of width for measuring opening 532.
Therefore, each pattern 542 and area that the first measuring structure 530 is watched by top view (Fig. 7) of measuring can be overlapping to form one
Overlapping area A.Meanwhile, measure pattern 542 size it is different from each other so that difference measure patterns 542 constitute overlapping area A that
This is different.Here, the different mark 542A measured on pattern 542 are different from each other.
Specifically, the mark 542A of the present embodiment for numeral 0~4, wherein these not isolabeling 542A be used for represent not
Same contraposition degrees of offset.For example, in the design of the present embodiment, mark 542A for 0 measurement pattern 542 have with it is corresponding
The identical area of measurement opening 532.Meanwhile, mark 542A has than corresponding measurement opening for 1~3 measurement pattern 542
532 bigger areas, and the mark 542A more big then corresponding size for measuring pattern 542 of numeral is bigger.Therefore, detected
When, there is gap as long as observing by the measurement pattern 542 corresponding to which mark 542A, so that it may know contraposition degrees of offset.
For example, when mark 542A is is formed with gap between 0 measurement pattern 542 and corresponding measurement opening 532,
Represent that the value of contraposition skew is more than 0.Carry out detection operation when, if set error permissible range need be less than mark 542A as
The error degree that 3 measurement pattern 540 is reacted, then mark 542 for 2 measurement pattern 542 with it is corresponding measure be open 532 it
Between be formed with gap, and mark 542 for 3 measurement pattern 542 and it is corresponding measure very close to each other between opening 532 when, can be with
This product is allowed to pass through detection.In addition, mark 542 is is formed between 3 measurement pattern 542 and corresponding measurement opening 532 between
Then this product can not pass through detection to gap.Setting for above-mentioned mark 542A can apply the measurement knot of each foregoing embodiment
Among structure, to help quick interpretation testing result.
Fig. 8 A are the upper schematic diagram of the first substrate of the face equipment of an embodiment, and Fig. 8 B are the panel of an embodiment
The upper schematic diagram of the second substrate of device.Being made referring to Fig. 8 A and Fig. 8 B, on first substrate 110 has the first functional layer
810 and first measuring structure 130 and on second substrate 120 make have the second functional layer 820 and the second measuring structure 140.Fig. 8 C
For Fig. 8 A and Fig. 8 B substrate in batch found into face equipment after, along hatching line VII-VII diagrammatic cross-section, and Fig. 8 D be Fig. 8 A with
After Fig. 8 B substrate in batch is vertical, along hatching line VIII-VIII diagrammatic cross-section.From Fig. 8 C and Fig. 8 D, first substrate 110 with
120 groups of second substrate is vertical to may make up face equipment 800, wherein the first functional layer 810 and the first measuring structure 130 are same film
Layer, and an at least component for the second functional layer 820 is identical film layer with the second measuring structure 140.Using applied to display panel as
Example, the first functional layer 810 can be the shading matrix in chromatic filter layer, and the second functional layer 820 can be active member battle array
Row, but be not limited.
When face equipment 800 is display panel, the second functional layer 820 set on second substrate 120 is for example including picture
Plain electrode PE, signal wire DL and signal shielding line 822, but be not limited, wherein the second functional layer 820 can also include
Scan line, active member, storage capacitor structure etc. are not illustrated in the component in figure directly.Here, two neighboring pixel electrode PE
Between region can not be normally carried out display, and need covered with shading matrix 812 and signal shielding line 822.It is general next
Say, the size of shading matrix 812 at least needs to cover the gap 824 between adjacent two bars shielding line 822.Therefore, hide
The width of light matrix 812 is typically set at the width not less than gap 824 to avoid light leak condition.With the present embodiment
Speech, the width of shading matrix 812 is beyond the width one in gap 824 apart from R to ensure that gap 824 is completely obscured.
With second substrate 120 contraposition skew may occur among the vertical process of group for first substrate 110, and this causes apart from R
Reduction, or even allow gap 824 to be exposed.Once gap 824 is exposed, then light leak condition will occur, and this makes display surface
The quality of plate is bad.Therefore, face equipment 800 is provided with the first measuring structure 130 and the second measuring structure 140 in Fig. 8 D,
Particularly, the second measuring structure 140 makes with the identical film layer of signal shielding line 822 of the second functional layer 820, with efficient inspection
Whether the degree for measuring the vertical contraposition skew of group exceeds permissible scope.First measuring structure 130 is used with the second measuring structure 140
To judge that the method for aligning degrees of offset is referred to the explanation of previous embodiment.In addition, first in Fig. 8 A to Fig. 8 D measures
Structure 130 and the second measuring structure 140 first and second measuring structure of any one can replace in previous embodiment.
In the present embodiment, make a reservation for during making the second functional layer 820 if the width of signal shielding line 822 is less than
The size of design, then can reduce apart from R, and this causes the permissible contraposition degrees of offset of face equipment 800 corresponding also to reduce.
Now, according to Fig. 2A, 2B, 3A, 3B, 4A, 4B associated description, the size of the second measuring structure 240 can also allow with diminution
Measure pattern 242 and contraposition skew is just reflected when aligning degrees of offset less than degree set in advance, this contributes to
It is correct to judge whether contraposition degrees of offset exceedes allowable range.
In summary, the measuring structure that the present invention is constituted different film layers in face equipment is designed as having not negative lap
Area (or overlapping widths).When group founds two substrates or when making the film layer of two different patterns, between measuring structure
The generation of contraposition skew can be reflected by forming gap.In addition, measuring structure may be constructed multiple measurement groups, different measurement groups are set
It is calculated as reacting different contraposition degrees of offset.Therefore, as long as why identifying measurement group present in gap during detection, it is possible to
It is efficient to learn whether contraposition degrees of offset exceeds allowable range.In an at least embodiment, single film patternization it
When scantling afterwards is less than predetermined design, the contraposition degrees of offset that measurement group is reacted also reduces therewith, therefore can be more
The loyal situation for reflecting actual contraposition skew.
Certainly, the present invention can also have other various embodiments, ripe in the case of without departing substantially from spirit of the invention and its essence
Various corresponding changes and deformation, but these corresponding changes and change ought can be made according to the present invention by knowing those skilled in the art
Shape should all belong to the protection domain of appended claims of the invention.
Claims (11)
1. a kind of face equipment, it is characterised in that including：
One first substrate；
One second substrate, it is vertical with face-to-face mode group with the first substrate；
One first measuring structure, is configured in the first substrate and the second substrate one of which, and measures opening with N number of,
Wherein N is positive integer；And
One second measuring structure, is configured in the first substrate and the second substrate one of which, and with N number of measurement pattern,
Respectively the area of the measurement pattern, which was accordingly covered, one of measures opening and each measurement figure in a selected measurement direction
The width of case is not less than corresponding one of width for measuring opening, and wherein first measuring structure is tied with second measurement
Structure is made up of different film layers；
Wherein, the width of i-th of measurement pattern is Xi, the width Yi for measuring opening i-th, Xi-Yi=Wi >=0, and j-th of amount
The width of mapping case is Xj, and the width Yj, Xj-Yj=Wj >=0, i and j of j-th of measurement opening are respectively 1~N, and i is not equal to j,
And Wi is not equal to Wj.
2. face equipment as claimed in claim 1, it is characterised in that N number of width for measuring pattern is inconsistent.
3. face equipment as claimed in claim 1, it is characterised in that N number of width for measuring opening is inconsistent.
4. face equipment as claimed in claim 1, it is characterised in that the respectively measurement pattern and corresponding one of measurement
Opening has same shape various sizes of profile.
5. face equipment as claimed in claim 4, it is characterised in that the profile is polygon, and this polygonal at least one
While falling in the area of the corresponding measurement pattern.
6. the face equipment as described in any one of claim 1 to 5, it is characterised in that at least one measures opening and not corresponded to
Measurement pattern it is completely obscured and formed a gap.
7. the face equipment as described in any one of claim 1 to 5, it is characterised in that first measuring structure and second amount
Geodesic structure is located on the first substrate and the second substrate respectively.
8. the face equipment as described in any one of claim 1 to 5, it is characterised in that respectively the width of the measurement pattern is more than pair
One of width for measuring opening for answering and overlapping with first measuring structure to form an overlapping area, each measurement figure
Case have one mark, difference measure patterns constitute those overlapping areas it is different from each other and also it is different measure pattern those mark
It is different from each other.
9. a kind of detection method of face equipment, it is characterised in that including：
Face equipment as described in any one of claim 1 to 8 is provided；And
Determine whether measure opening not by it is corresponding measurement pattern area it is completely obscured and formed a gap, if so, then table
Show that the face equipment has a processing procedure and aligns skew.
10. the detection method of face equipment as claimed in claim 9, it is characterised in that the width of i-th of measurement pattern is
Xi, the width Yi of i-th of measurement opening, Xi-Yi=Wi >=0, and the width of j-th of measurement pattern is Xj, j-th of measurement is open
Width Yj, Xj-Yj=Wj >=0, i and j be respectively 1~N, j is not equal to i, and Wj is not equal to Wi, this i-th measure opening not
Measure pattern by this i-th to fill up, measure opening this j-th and measure pattern by this j-th and fill up, then the first substrate with this
Processing procedure skew of two substrates in the selected measurement direction falls in (Wi)/2 to (Wj)/2.
11. the detection method of face equipment as claimed in claim 9, it is characterised in that respectively measurement figure of the face equipment
Case has a mark, respectively the width of the measurement pattern be equal to or more than corresponding one of width for measuring opening and with this
First measuring structure is overlapping to form an overlapping area, and it is different from each other and not that difference measures those overlapping areas that patterns constitute
The mark of same amount mapping case is different from each other, and the detection method of the face equipment is included according to the measurement corresponding to the gap
The mark on pattern judges the degree of processing procedure contraposition skew.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103141391 | 2014-11-28 | ||
| TW103141391A TWI547918B (en) | 2014-11-28 | 2014-11-28 | Panel device and detecting method thereof |
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| Publication Number | Publication Date |
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| CN104576615A CN104576615A (en) | 2015-04-29 |
| CN104576615B true CN104576615B (en) | 2017-08-15 |
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| TW (1) | TWI547918B (en) |
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| CN104835837B (en) * | 2015-06-05 | 2017-07-28 | 杭州士兰微电子股份有限公司 | High-voltage semi-conductor device and its manufacture method |
| CN105206601B (en) | 2015-10-19 | 2019-03-12 | 京东方科技集团股份有限公司 | Test element unit, array substrate, display panel, display device and the method for manufacturing test element unit |
| CN105632959B (en) * | 2016-01-05 | 2019-01-22 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof and display device |
| CN113031359B (en) * | 2021-03-23 | 2022-08-23 | 滁州惠科光电科技有限公司 | COA type array substrate, measuring method thereof and liquid crystal display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1161519A (en) * | 1995-11-06 | 1997-10-08 | 索尼公司 | Liquid crystal display device and mfg. method thereof |
| CN1844845A (en) * | 2006-03-20 | 2006-10-11 | 友达光电股份有限公司 | Alignment detection structure and alignment offset detection method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4248835B2 (en) * | 2002-04-15 | 2009-04-02 | シャープ株式会社 | Substrate for liquid crystal display device and liquid crystal display device including the same |
| US7102155B2 (en) * | 2003-09-04 | 2006-09-05 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
| CN101002293A (en) * | 2004-08-25 | 2007-07-18 | 株式会社东芝 | Image display device and its manufacturing method |
| JP4992967B2 (en) * | 2007-03-15 | 2012-08-08 | 富士通株式会社 | Display panel, multilayer display element and manufacturing method thereof |
| TWI352828B (en) * | 2007-03-30 | 2011-11-21 | Au Optronics Corp | Method for forming color filter device |
| DE102011078927B4 (en) * | 2010-07-12 | 2019-01-31 | Carl Zeiss Sms Ltd. | Method for correcting errors of a photolithographic mask |
| TWI453500B (en) * | 2011-08-16 | 2014-09-21 | Chunghwa Picture Tubes Ltd | Liquid crystal test cell and manufacturing method thereof |
| EP2940515B1 (en) * | 2012-12-27 | 2017-05-31 | Toppan Printing Co., Ltd. | Liquid crystal display device |
| CN105026962B (en) * | 2013-01-25 | 2018-05-04 | 凸版印刷株式会社 | The manufacture method of filter substrate, liquid crystal display device and filter substrate |
-
2014
- 2014-11-28 TW TW103141391A patent/TWI547918B/en not_active IP Right Cessation
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2015
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1161519A (en) * | 1995-11-06 | 1997-10-08 | 索尼公司 | Liquid crystal display device and mfg. method thereof |
| CN1844845A (en) * | 2006-03-20 | 2006-10-11 | 友达光电股份有限公司 | Alignment detection structure and alignment offset detection method |
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| TWI547918B (en) | 2016-09-01 |
| CN104576615A (en) | 2015-04-29 |
| TW201619938A (en) | 2016-06-01 |
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