WO2022199192A1

WO2022199192A1 - Coa type array substrate and measurement method therefor, and liquid crystal display panel

Info

Publication number: WO2022199192A1
Application number: PCT/CN2021/143429
Authority: WO
Inventors: 彭备; 余思慧
Original assignee: 滁州惠科光电科技有限公司; 惠科股份有限公司
Priority date: 2021-03-23
Filing date: 2021-12-30
Publication date: 2022-09-29
Also published as: CN113031359A; CN113031359B

Abstract

A COA type array substrate (31) and a measurement method therefor, and a liquid crystal display panel. The COA type array substrate (31) comprises a base substrate (310). The COA type array substrate (31) further comprises: a display area (10) and a peripheral area (20) surrounding the display area (10); the peripheral area (20) comprises multiple measurement areas (21); on the base substrate (310), each measurement area (21) comprises multiple auxiliary measurement pattern layers (400) arranged in an array; an auxiliary measurement through hole (410) is formed at the middle portion of each of the auxiliary measurement pattern layers (400); in the measurement areas (21), multiple color resist units (3300) are also provided on the side of the auxiliary measurement pattern layers (400) away from the base substrate (310) in the thickness direction of the base substrate (310); and a thin film transistor layer (320) is removed from the COA type array substrate (31), and only the auxiliary measurement pattern layers (400) of which middle portions are provided with the auxiliary measurement through holes (410) are provided as references for measuring the color resist units (3300), such that measurement accuracy can be improved by reducing interference.

Description

COA type array substrate and its measurement method, liquid crystal display panel

This application requires a Chinese patent application with the application number of 202110306326.7 and the application name of "COA-type array substrate and its measurement method, liquid crystal display panel", which was submitted to the Patent Office of the State Intellectual Property Office of the People's Republic of China on March 23, 2021. Priority, the entire contents of which are incorporated herein by reference.

technical field

The present application belongs to the field of display technology, and in particular relates to a COA type array substrate, a measurement method thereof, and a liquid crystal display panel.

Background technique

Most of the liquid crystal display devices on the existing market are backlight type liquid crystal display devices, which include a liquid crystal display panel and a backlight module. The liquid crystal display panel is usually composed of an array substrate (thin film transistor, TFT), a color filter substrate (CF), a liquid crystal (LC) disposed between the array substrate and the color filter substrate, and a sealant (sealant). )composition.

Since this kind of structure often causes the problem of poor alignment between the color filter substrate and the array substrate, it is proposed in the prior art to set the color filter layer in the color filter substrate on the array substrate, and the formed array substrate is called COA (COA). color filter on array) type array substrate.

In order to meet the requirements of customers, it is necessary to monitor the display area in the COA type array substrate. In the prior art, the display area is completely imitated, and the same thin film transistor layer and color filter layer are prepared in the peripheral area surrounding the display area. However, during the measurement, the data of the color filter layer cannot be accurately obtained due to the interference of various structures of the thin film transistor layer. Therefore, a new solution that can improve the accuracy is urgently needed.

technical problem

The embodiments of the present application provide a COA-type array substrate, a measurement method thereof, and a liquid crystal display panel. In the measurement area, by removing the thin film transistor layer, only an auxiliary measurement pattern layer with auxiliary measurement through holes in the middle is provided as the measurement The reference for the color resist unit, which can improve measurement accuracy by reducing interference.

technical solutions

In a first aspect, a COA-type array substrate is provided, comprising: a base substrate, the COA-type array substrate further comprising: a display area and a peripheral area surrounding the display area, the peripheral area including a plurality of measurement areas; On the base substrate, each measurement area includes a plurality of auxiliary measurement pattern layers arranged in an array, and an auxiliary measurement through hole is opened in the middle of each auxiliary measurement pattern layer; along the thickness direction of the base substrate, at A side of the auxiliary measurement pattern layer away from the base substrate, and a plurality of color resistance units are also arranged in the measurement area; wherein, on the plane where the base substrate is located, the projection center of the color resistance units It is coincident with the projection center of the corresponding auxiliary measurement pattern layer and the projection center of the auxiliary measurement through hole in the auxiliary measurement pattern layer, and the projection size of the color resistance unit is larger than the auxiliary measurement through hole. Projection size.

In the COA type array substrate provided by the embodiment of the present application, in the measurement area, by removing the thin film transistor layer, an auxiliary measurement pattern layer with auxiliary measurement through holes in the middle is only provided between the color resistance unit and the base substrate, as the measurement The reference object of the physical characteristics of the color resistance unit, so that the interference of the thin film transistor layer to the color resistance unit can be reduced, and the measurement accuracy of the color resistance unit can be improved.

With reference to the first aspect, as a possible implementation manner, the color resistance unit is provided on the side of the auxiliary measurement pattern layer located in the odd-numbered or even-numbered columns away from the base substrate; The color resistance unit is disposed on the side of the auxiliary measurement pattern layer in the row or even row that is far away from the base substrate; One side of the base substrate is provided with the color resistance unit; or, on the side of the auxiliary measurement pattern layer located in odd rows and even columns and even rows and odd columns away from the base substrate, a color resistance unit is provided. Describe the color resistance unit. In this implementation manner, since the density between the color resist units is reduced, the mutual interference between the color resist units is reduced, and the accuracy of detecting the opposite sides of the auxiliary measurement pattern layer extending along the column direction is improved.

With reference to the first aspect, as a possible implementation manner, the auxiliary measurement pattern layer includes a first auxiliary measurement pattern layer and a second auxiliary measurement pattern layer; the first auxiliary measurement pattern layer is located away from the base substrate. The auxiliary measurement pattern layer of the color resistance unit is provided on one side of the base plate, and the second auxiliary measurement pattern layer is the auxiliary measurement pattern layer without the color resistance unit on the side away from the base substrate; along the row direction , the length of the first auxiliary measurement pattern layer is greater than or equal to the length of the second auxiliary measurement pattern layer, and the length of the first auxiliary measurement pattern layer is greater than or equal to the length of the color resistance unit; along the column direction, The length of the first auxiliary measurement pattern layer is greater than or equal to the length of the color resist unit. In this implementation manner, by reducing the size of the second auxiliary measurement pattern layer along the row direction, the size of the measurement area along the row direction is reduced, and the area occupied by the measurement area is saved. In addition, along the row direction, by making the length of the first auxiliary measurement pattern layer to be greater than or equal to the length of the color resistance unit, the color resistance units laid on the two first auxiliary measurement pattern layers arranged in the row direction can be prevented from overlapping each other. . In this implementation manner, along the column direction, by making the length of the first auxiliary measurement pattern layer greater than or equal to the length of the color resistance unit, it is possible to avoid the color resistance laid on the two first auxiliary measurement pattern layers arranged along the column direction. Units overlap each other.

In combination with the first aspect, as a possible implementation manner, each color resistance unit is also provided with two alignment through holes with the same structure; the two alignment through holes are located between the color resistance unit and the corresponding The overlapping area of the auxiliary measurement pattern layer is measured, and the two alignment through holes are respectively arranged on opposite sides of the color resist unit. In this implementation manner, the two alignment through holes not only play the role of air outlet and buffer, but also play the role of alignment.

With reference to the first aspect, as a possible implementation manner, the center lines corresponding to the two alignment through holes respectively coincide with the center lines of the color resistance unit. In this implementation, the offset of the color resistance unit can be estimated according to the offset of the bit via.

With reference to the first aspect, as a possible implementation manner, the display area includes a plurality of sub-pixel areas arranged in an array; on the plane where the base substrate is located, the projected size of the auxiliary measurement through hole is smaller than or is equal to the projected size of the sub-pixel area. In this implementation manner, in order to avoid light leakage, the projected size of the auxiliary measurement through hole is smaller than or equal to the projected size of the sub-pixel area.

With reference to the first aspect, as a possible implementation manner, the multiple auxiliary measurement pattern layers are integrally formed by the first metal layer.

With reference to the first aspect, as a possible implementation manner, the color resistance unit is one of a red color resistance unit, a green color resistance unit, and a blue color resistance unit.

With reference to the first aspect, as a possible implementation manner, the projected size of the auxiliary measurement pattern layer on the plane where the base substrate is located is larger than the projected size of the auxiliary measurement through hole on the plane where the base substrate is located. Projection size.

With reference to the first aspect, as a possible implementation manner, a plurality of the auxiliary measurement pattern layers are integrally formed by the first metal layer.

With reference to the first aspect, as a possible implementation manner, the material of the first metal layer includes copper.

With reference to the first aspect, as a possible implementation manner, the projected shape of the alignment through hole on the plane where the base substrate is located is any one of a rectangle, a square, and a circle.

With reference to the first aspect, as a possible implementation manner, along the column direction, the length of the second auxiliary measurement pattern layer is greater than or equal to the length of the color resistance unit.

A second aspect provides a method for measuring a COA-type array substrate, which is applied to a measuring device, the method comprising: a measurement area of the COA-type array substrate according to any one of the first aspect and the implementation manner of the first aspect , determine the position of the auxiliary measurement through hole; according to the position of the auxiliary measurement through hole, for each edge of the auxiliary measurement through hole, determine the target edge parallel to the edge and the closest The edge is used as the edge of the corresponding color resist unit; according to the edge of the color resist unit, the length along the row direction and the length along the column direction of the color resist unit are determined.

In the measurement method of the COA type array substrate provided by the embodiment of the present application, since the thin film transistor layer is removed in the measurement area of the COA type array substrate, only an auxiliary measurement channel is provided in the middle between the color resistance unit and the base substrate. The auxiliary measurement pattern layer of the hole is used as a reference for measuring the physical properties of the color resistance unit, which eliminates the interference of the thin film transistor layer on the measurement of the color resistance unit, thereby improving the measurement accuracy of the color resistance unit.

With reference to the second aspect, as a possible implementation manner, the method further includes:

According to the position of the auxiliary measurement through hole, the size along the row direction and the size along the column direction of the alignment through hole on the color resist unit is determined.

In a third aspect, a measurement device is provided, comprising: a processor;

The processor executes the computer program stored in the memory to implement the method for measuring the COA type array substrate according to any one of the second aspect and the implementation manner of the second aspect.

In a fourth aspect, a computer-readable storage medium is provided, comprising: the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, any one of the second aspect and the second aspect is implemented. The measuring method of the COA type array substrate.

A fifth aspect provides a liquid crystal display panel, comprising the COA-type array substrate and the opposite substrate as described in any one of the first aspect and the implementation manner of the first aspect, and the COA-type array substrate and the the liquid crystal layer between the opposing substrates.

A sixth aspect provides a liquid crystal display device, the liquid crystal display panel according to any one of the first aspect and the implementation manner of the first aspect, and a driving device for driving the liquid crystal display panel.

beneficial effect

In the COA-type array substrate and its measurement method, the liquid crystal display panel and the liquid crystal display device provided by the embodiments of the present application, in the measurement area, by removing the thin film transistor layer, an auxiliary opening is only provided in the middle between the color resistance unit and the base substrate. The auxiliary measurement pattern layer of the through hole is measured as a reference for measuring the physical properties of the color resistance unit, thereby reducing the interference of the thin film transistor layer on the color resistance unit and improving the measurement accuracy of the color resistance unit.

Description of drawings

In order to explain the technical solutions of the embodiments of the present application more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. For those of ordinary skill, other drawings can also be obtained from these drawings without any creative effort.

1 is a schematic structural diagram of a liquid crystal display device provided in the prior art;

2 is a schematic structural diagram of another liquid crystal display device provided in the prior art;

3 is a schematic cross-sectional view of the COA-type array substrate in FIG. 2;

FIG. 4 is a schematic top view of the COA type array substrate in FIG. 2;

Fig. 5 is the structural representation of a measurement area in the peripheral area;

Fig. 6 is the structural representation in the area P in Fig. 5;

Figure 7 is a schematic cross-sectional view along the AA' direction in Figure 6;

Figure 8 is a schematic cross-sectional view along the BB' direction in Figure 7;

9 is a schematic structural diagram of a measurement area provided by an embodiment of the present application;

10 is a schematic structural diagram of another measurement area provided by an embodiment of the present application;

11 is a schematic structural diagram of another measurement area provided by an embodiment of the present application;

12 is a schematic structural diagram of another measurement area provided by an embodiment of the present application;

Figure 13 is a schematic cross-sectional view along the CC' direction in Figure 12;

14 is a schematic structural diagram of another measurement area provided by an embodiment of the present application;

FIG. 15 is a schematic flowchart of a method for measuring a COA array substrate provided in an embodiment of the present application.

Reference number:

1-frame; 2-cover; 3-liquid crystal display module; 4-backlight module; 5-circuit board; 10-display area; 110-sub-pixel area; 20-peripheral area; 21-measurement area; 30- 31-array substrate; 32-opposing substrate; 33-liquid crystal layer; 34-upper polarizing layer; 35-lower polarizing layer; 310-substrate substrate; 320-thin film transistor layer; 321-gate electrode; 322 - gate insulating layer; 323 - active layer; 324 - source electrode; 325 - drain electrode; 326 - passivation layer; 327 - data line; 328 - scan line; 3201 - first metal layer; 3202 - second metal layer; 330-color filter layer; 3300-color resist unit; 331-red color resist unit; 332-green color resist unit; 333-blue color resist unit; 340-transparent conductive layer; 400- auxiliary measurement pattern layer; 401 - the first auxiliary measurement pattern layer; 402 - the second auxiliary layer pattern layer; 410 - auxiliary measurement through holes; 420 - alignment through holes.

The realization, functional characteristics and advantages of the purpose of the present application will be further described with reference to the accompanying drawings in conjunction with the embodiments.

Embodiments of the present invention

It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.

The embodiments of the present application provide a liquid crystal display device, and the liquid crystal display device can be various electronic devices or the liquid crystal display device can be applied to various electronic devices.

For example, the electronic device may be a variety of different types of electronic devices, such as a smart phone, a tablet computer, an electronic reader, a car computer, a navigator, a digital camera, a smart TV, and a smart wearable device. The liquid crystal display device provided by the embodiments of the present application has a very wide application prospect.

In the prior art, most of the liquid crystal display devices are backlight type liquid crystal display devices, and FIG. 1 shows a schematic structural diagram of a backlight type liquid crystal display device. As shown in FIG. 1 , the main structure of the liquid crystal display device includes a frame 1 , a cover plate 2 , a liquid crystal display module 3 , a backlight module 4 , a circuit board 5 and other electronic accessories including a camera. The liquid crystal display module 3 includes a liquid crystal display panel 30 , an upper polarizing layer 34 disposed on the side of the liquid crystal display panel 30 close to the cover plate 2 , and a lower polarizing layer 35 disposed on the side of the liquid crystal display panel close to the backlight module 4 . The liquid crystal display panel 30 includes an array substrate 31, an opposite substrate 32, a liquid crystal layer 33 disposed between the array substrate 31 and the opposite substrate 32, and the array substrate 31 and the opposite substrate 32 are assembled together by a sealant , so that the liquid crystal layer 33 is limited in the area surrounded by the frame sealant. Wherein, the color filter layer 330 is usually disposed on the opposite substrate 32, and the opposite substrate 32 is referred to as a color filter substrate.

It should be understood that the color filter layer 330 is used to filter the white light emitted from the array substrate 31 into light of different colors. The color filter layer 330 generally includes three primary color resist units arranged in an array, for example, the three primary color resist units include a red color resist unit, a green color resist unit and a blue color resist unit. The red color resist unit can filter the white light emitted from the array substrate 31 into red light, the green color resist unit can filter the white light emitted from the array substrate 31 into green light, and the blue color resist unit can filter the white light emitted from the array substrate 31 into green light. Blu-ray. Of course, the color filter layer 330 may also include other color resist units, and the embodiment of the present application uses three primary color resist units as an example for description.

As shown in FIG. 1 , taking the U-shaped longitudinal section of the frame 1 as an example, the liquid crystal display module 3 , the backlight module 4 , the circuit board 5 and other electronic accessories including cameras are arranged in the frame 1 , and the backlight module 4 Below the liquid crystal display module 3 , the circuit board 5 is located between the backlight module 4 and the frame 1 , and the cover plate 2 is located on the side of the liquid crystal display module 3 away from the backlight module 4 . The cover plate 2 may be, for example, transparent glass.

It should be understood that the display principle of the liquid crystal display device in FIG. 1 is as follows: the backlight module 4 emits white light, passes through the lower polarizing layer 35 to form white polarized light with a specific polarization direction, enters the array substrate 31 , and is adjusted by the liquid crystal layer 33 . The polarized light of red, green and blue is formed by filtering through the color filter layer 330 on the color filter substrate. When the polarization direction of the three-primary color polarized light is perpendicular to the polarization direction of the upper polarizing layer 34, the three-primary color polarized light cannot pass through the upper polarizing layer 34, and no light exits at this time; When the polarization directions of the layers 34 are parallel, the polarized light of the three primary colors can pass through the upper polarizing layer 34, and the light intensity of the outgoing light is the strongest at this time. It should be understood that since the liquid crystal molecules have optical rotatory properties to polarized light, the specific arrangement direction of the liquid crystal molecules can change the polarization direction of the polarized light passing through the liquid crystal layer. When the control of the electric field rotates, the polarized light of the three primary colors will pass through or not pass through the upper polarizing layer 34 regularly, and finally form a color image.

Based on the liquid crystal display device shown in FIG. 1 , in FIG. 1 , the propagation sequence of the optical path is as follows: the backlight module 4 emits light and passes through the lower polarizing layer 35 , the array substrate 31 , the liquid crystal layer 33 , the color filter substrate, and the upper polarizing layer in sequence. 34. The cover plate 2 is ejected.

The structure and display principle of the existing liquid crystal display device are described in detail above. However, when preparing the liquid crystal display panel 30 in the liquid crystal display device with this structure, the color filter substrate and the array substrate 31 need to be prepared separately, and then When the boxes are assembled again, the problem of poor alignment between the color filter substrate and the array substrate 31 often occurs, thereby causing problems such as pixel light leakage or low aperture ratio.

In order to solve the above problems, another liquid crystal display device is proposed in the prior art.

FIG. 2 shows a schematic structural diagram of another liquid crystal display device. As shown in FIG. 2 , in the liquid crystal display device, the liquid crystal display panel 30 prepares the color filter layer 330 on the array substrate 31 . At this time, the array substrate 31 can be called a COA-type array substrate, because there is no alignment problem when the COA-type array substrate 31 and the opposite substrate 32 are assembled, so it is possible to reduce the time required for the assembly process during the preparation of the liquid crystal display panel 30. Difficulty, to avoid errors when aligning boxes. The other structures are the same as those of the liquid crystal display device shown in FIG. 1 , and are not repeated here.

It should be understood that the display principle of the liquid crystal display device in FIG. 2 is as follows: the backlight module 4 emits white light, passes through the lower polarizing layer to form white polarized light in a specific direction, enters the COA-type array substrate 31, and passes through the color on the COA-type array substrate. The filter layer 330 filters the polarized light of three primary colors of red, green and blue, and then is adjusted by the liquid crystal layer 33 to regularly transmit or not transmit through the upper polarizing layer 34 to finally form a color image.

Based on the structure of the liquid crystal display device shown in FIG. 2 , in FIG. 2 , the propagation sequence of the optical path is as follows: the backlight module 4 emits light, and passes through the lower polarizing layer 34 , the COA array substrate 31 , the liquid crystal layer 33 , and the opposite substrate in sequence. 32. The upper polarizing layer 34, the exit cover plate 2.

The structure and display principle of the liquid crystal display device including the COA type array substrate 31 are described in detail above. The structure of the COA-type array substrate 31 will be described in detail below with reference to FIGS. 3 to 8 .

FIG. 3 shows a schematic cross-sectional view of the COA-type array substrate 31 in FIG. 2 . FIG. 4 shows a schematic top view of the COA-type array substrate 31 in FIG. 2 .

As shown in FIG. 3 , the COA type array substrate 31 includes a base substrate 310 , a thin film transistor (TFT) layer 320 , a color filter layer 330 and a transparent conductive layer 340 which are stacked in sequence. As shown in FIG. 4 , in the schematic top view, the COA-type array substrate 31 includes the display area 10 and the peripheral area 20 . FIG. 4 takes the peripheral area 20 surrounding the display area 10 as an example for illustration.

When the COA array substrate 31 shown in FIG. 3 is arranged in the liquid crystal display device shown in FIG. That is to say, the base substrate 310 is provided on the lower polarizing layer 35 , the thin film transistor layer 320 is provided on the base substrate 310 , the color filter layer 330 is provided on the thin film transistor layer 320 , and the transparent conductive layer is provided on the color filter layer 330 layer 340 , and then the liquid crystal layer 33 is formed on the transparent conductive layer 340 .

It should be understood that in the display area 10, the transparent conductive layer 340 generally includes a pixel electrode and a common electrode for driving the liquid crystal in the liquid crystal layer 33 to rotate. The color filter layer 330 located under the transparent conductive layer 340 is the same as the description of the color filter layer 330 in FIG. 1 , and will not be repeated here.

In order to display the thin film transistor layer 320 under the color filter layer 330 , it is necessary to control and adjust the driving voltages on the pixel electrodes corresponding to the liquid crystals at different positions in the display area 10 to form different display brightness. Therefore, as shown in FIG. 4 , the thin film transistor layer 320 is generally provided with a plurality of scan lines 328 extending in the row direction (the x direction shown in FIG. 4 ) and a plurality of scanning lines 328 extending in the column direction (as shown in FIG. 4) extending data line 327. The x-direction and the y-direction are perpendicular to each other, and both the x-direction and the y-direction are parallel to the plane where the base substrate 310 is located.

In addition, in the display area 10, the thin film transistor layer 320 further includes a sub-pixel area 110 defined by a plurality of scan lines 328 and a plurality of data lines 327 intersecting each other, and each sub-pixel area 110 is distributed with one TFT. Along the thickness direction of the base substrate 310, each TFT includes a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode. FIG. 4 takes a plurality of rectangular sub-pixel regions 110 arranged in an array as an example for illustration. At this time, the sub-pixel regions 110 arranged in a row along the row direction are called a row of sub-pixel regions 110, and the sub-pixel regions 110 arranged in a row along the column direction are referred to as a row of sub-pixel regions 110. The region 110 is referred to as a column of sub-pixel regions 110 .

Based on this, if each scan line 328 is connected to the gate electrodes 321 of a plurality of TFTs in a row of sub-pixel regions 110, and each data line 327 is connected to the source electrodes of a plurality of TFTs in a column of sub-pixel regions 110, And the drain of each TFT is connected to the corresponding pixel electrode through the via holes distributed in the color filter layer as an example, then the scan line 328 can transmit to the gates of the multiple TFTs in the sub-pixel region 110 of a corresponding row. The scan signal controls to turn on or off a plurality of TFTs in the corresponding row, and the data line 327 can transmit data signals to the source electrodes of the TFTs in the sub-pixel area 110 of a corresponding column when the TFTs are turned on, for providing the corresponding pixel electrodes different drive voltages.

With reference to FIGS. 3 and 4 , it should be understood that during the manufacturing process of the structure of the above-mentioned thin film transistor, the thin film transistor layer 320 generally includes a first metal layer 3201, a gate insulating layer 322, an active layer 323, a second metal layer 3201, a gate insulating layer 322, an active layer 323, a second metal layer 320, and a second metal layer 320. Metal layer 3202 and passivation layer 326 . The first metal layer 3201 is disposed on the side close to the base substrate 310 , and the passivation layer 326 is disposed on the side close to the color filter layer 330 . The first metal layer 3201 includes a plurality of scan lines 327 and gate electrodes 321 for forming TFTs; the second metal layer 3202 includes a plurality of data lines 328 and source electrodes 324 and drain electrodes 325 for forming TFTs. Here, FIG. 3 is only used to illustrate the upper and lower positional relationship between each layer, and the laying shape of each layer is set as required.

As shown in FIG. 4 , the peripheral area 20 is used for wiring, and a scan driving circuit for providing scan signals for the scan lines 327 can also be arranged in the peripheral area 20 . In addition, in order to prepare the COA type array substrate 31 to meet the requirements of customers, after the preparation of the color filter layer 330 and before the preparation of the transparent conductive layer 340, the optical characteristics of the COA type array substrate 31 (for example, the output The color, brightness, etc. of the incident light) and physical characteristics (such as the corresponding sizes of the three primary color resist units in the color filter layer 330, the spacing between adjacent ones, etc.) are effectively monitored to prevent abnormalities.

In the prior art, in order to monitor the display area 10 in the COA type array substrate 31 , in the manufacturing process, a plurality of measurement areas 21 are prepared in the peripheral area 20 completely imitating the design in the display area 10 . That is, in each measurement area 21, the same scan lines 327, data lines 328, TFTs, color filter layers 330, and the like as in the display area 10 are prepared.

FIG. 5 shows a schematic structural diagram of a measurement area 21 in the peripheral area 20 .

As shown in FIG. 5 , in the measurement area 21, exemplarily, in the design of the display area 10, a plurality of scan lines 327 extending along the row direction x are arranged in the thin film transistor layer 320, and a plurality of scanning lines 327 extending along the column direction y are arranged in the thin film transistor layer 320. The data lines 328 , the plurality of scan lines 327 and the plurality of data lines 328 intersect each other to define two rows and six columns of sub-pixel regions 110 , and one TFT (not shown in FIG. 5 ) is distributed in each sub-pixel region 110 .

A corresponding color resistance unit 3300 is provided on the side of the TFT in each sub-pixel region 110 away from the base substrate 310 , and the color resistance unit 3300 may be a red color resistance unit 331 , a green color resistance unit 332 or a blue color resistance unit 333 . Wherein, along the row direction, the three primary color resist units 3300 are repeatedly arranged, and along the column direction, the color resist units 3300 in the same column have the same color. Along the thickness direction of the array substrate 31 , the projection of the color resist unit 3300 overlaps with the projection of the corresponding sub-pixel area.

On this basis, usually in order to prevent light leakage, the color resist units 3300 laid on the thin film transistor layer 320 are designed such that: taking the color resist unit 3300 as a rectangle as an example, the size of each color resist unit 3300 is larger than the corresponding sub-pixel The size of the area 110 is determined, and the projection center of the color resist unit 3300 and the sub-pixel area 110 are coincident, so that the color-resist unit 3300 intersects with the scan line 327, the data line 328, and the sub-pixel area 110 that define the corresponding sub-pixel area 110. The middle TFT structures will all overlap.

At this time, when measuring the physical properties in the measurement area 21, for example, when measuring the length and width of a color resistance unit 3300, the existing equipment will not only be affected by the adjacent color resistance units 3300 around the color resistance unit 3300. edge interference (for example, abnormal situations such as skew, overlap, etc.), and will also be interfered by the scan lines 327 and data lines 328 that cross and define the corresponding sub-pixel area 110 below, and even by the interference of the TFT structure, resulting in the device determining The measurement results are usually not real data, so it is impossible to accurately determine whether the color filter layer is normal or not, which affects the production yield.

FIG. 6 is a schematic view of the structure in the region P in FIG. 5 , FIG. 7 is a schematic cross-sectional view along the AA' direction in FIG. 6 , and FIG. 8 is a schematic cross-sectional view along the BB' direction in FIG. 6 .

As shown in FIG. 5 and FIG. 6 , the color resist unit 3300 is the first green color resist unit G1 as an example for illustration. Compared with the first green color resist unit G1 , there are distributed on the left side of the first green color resist unit G1 . In the first red color resistance unit R1, a first blue color resistance unit B1 is distributed on the right side of the first green color resistance unit G1, a second green color resistance unit G2 is distributed in the same column in the upper row, and a second green color resistance unit G2 is distributed in the same column in the next row. The third green color resist unit G3.

5, 6, 7 and 8, for example, when measuring the length of the first green color resistance unit G1 along the row direction x, the device needs to collect the edge g1 extending along the column direction of the first green color resistance unit G1 and the position of the edge g1', and then determine the distance between the edge g1 and the edge g1', that is, the length of the first green color resistance unit G1 along the x direction. However, when collecting the edge g1, the device may collect the edge of the first red color resistance unit R1 on the left side of g1, or the two edges of the data line 327 on the left side of the corresponding sub-pixel area 110, or Corresponding to the edge of the gate of the TFT in the sub-pixel region 110 . As shown in FIG. 7, it is even possible to capture the edges of the passivation layer 326. Similarly, when collecting the edge g1', it may also be interfered by multiple edges, so that the real edge of the first green color resistance unit G1 cannot be collected, and thus it is impossible to accurately determine the row direction x of the first green color resistance unit G1. length. Similarly, the length of the first green color resistance unit G1 along the column direction y cannot be accurately measured.

In addition, as shown in FIG. 5 and FIG. 6 , a through hole PAS is also provided in the area where each color resist unit does not overlap with the corresponding sub-pixel area 110 (for example, the area overlapped with the scan line), and the through hole PAS starts from To the role of gas, buffer (buffer). In the prior art, when the measuring device measures the length of the through hole PAS of the first green color resistance unit G1 along the y direction, it is limited by the accuracy of the device, and by the edge of the lower scan line 328 and the length of the first green color resistance unit G1. The interference of the edge g1″ and the edge of the third green color resistance unit G3 may even be limited by the interference of the active layer of the TFT, the source and drain edges, etc., so that the pass-through on the first green color resistance unit G1 cannot be obtained. The length of the hole PAS along the y-direction. In addition, since the actual shape of the through hole PAS is usually irregular, not a perfect circle or a square, so even if the length of the through hole PAS on the first green color resist unit G1 along the y direction is obtained, it cannot reflect the length of the through hole PAS. reality.

Therefore, in the measurement area, a new structural design solution is required to solve the problem of inaccurate measurement and improve the measurement accuracy of the color filter layer.

In view of this, the present application provides a COA-type array substrate. In the measurement area of the COA-type array substrate, by removing the thin film transistor layer, an auxiliary measurement channel is only provided in the middle between the color resistance unit and the base substrate. The auxiliary measurement pattern layer of the hole is used as a reference for measuring the physical properties of the color resist unit, which can reduce the interference of the thin film transistor layer on the color resist unit, improve the measurement accuracy of the color resist unit, and then improve the physical properties of the color filter layer. measurement accuracy.

The structure of the COA-type array substrate provided in the embodiments of the present application will be described in detail below with reference to FIGS. 9 to 14 . 9 to 12 and FIG. 14 are schematic structural diagrams of the measurement area 21 in the COA type array substrate provided by the embodiments of the present application. FIG. 13 is a schematic cross-sectional view of the measurement area 21 shown in FIG. 12 along the CC' direction.

The COA-type array substrate provided in this embodiment of the present application includes a base substrate 310 .

Taking the structure shown in FIG. 4 as an example, the COA type array substrate further includes a display area 10 and a peripheral area 20 surrounding the display area 10 , and the peripheral area 20 includes a plurality of measurement areas 21 .

Taking the display area 10 as a rectangle as an example, with reference to FIG. 4 , relative to the display area 10 , the measurement areas 21 may be distributed on at least one of the left side, the right side, the upper side or the lower side of the display area 10 . There may be a plurality of measurement areas 21 distributed on each side, and the number of measurement areas 21 distributed on each side may be different, and the size and shape of each measurement area 21 may also be different. For example, the shape of the measurement area 21 may be is square.

On the base substrate 310 , each measurement area 21 further includes a plurality of auxiliary measurement pattern layers 400 arranged in an array, and an auxiliary measurement through hole 410 is opened in the middle of each auxiliary measurement pattern layer 400 .

It should be understood that the plurality of auxiliary measurement pattern layers 400 arranged in an array are arranged in multiple rows and columns on the base substrate 310 . The size and shape of the auxiliary measurement pattern layer 400 can be set and changed as required, which is not limited in this embodiment of the present application. The size and shape of the auxiliary measurement through hole 410 can also be set and changed as required, which is not limited in this embodiment of the present application.

In addition, since an auxiliary measurement through hole 410 needs to be opened in the middle of each auxiliary measurement pattern layer 400 , on the plane where the base substrate 310 is located, the projected size of the auxiliary measurement pattern layer 400 is larger than that of the auxiliary measurement through hole 410 projection size.

Optionally, as a possible implementation manner, the plurality of auxiliary measurement pattern layers 400 are integrally formed by the first metal layer.

It should be understood that the plurality of auxiliary measurement pattern layers 400 may be prepared by using the first metal layer used for preparing the scan lines and the gate of the TFT in the display area 10 , wherein the material of the first metal layer may be copper. Certainly, the material of the first metal layer may also include other materials, which are not limited in this embodiment of the present application.

Along the thickness direction of the base substrate 310 , on the side of the auxiliary measurement pattern layer 400 away from the base substrate 310 , the measurement area 21 is further provided with a plurality of color resistance units 3300 .

As shown in FIG. 13 , along the thickness direction of the base substrate 310 , an auxiliary measurement pattern layer 400 is laid on the base substrate 310 , and a color resistance unit 3300 is laid on the auxiliary measurement pattern layer 400 .

Optionally, the color resistance unit is one of a red color resistance unit, a green color resistance unit, and a blue color resistance unit.

It should be understood that a red color resistance unit, a green color resistance unit, and a blue color resistance unit are laid on the side of the auxiliary measurement pattern layer 400 away from the base substrate substrate 310 as required. The size of the primary color resist unit is exactly the same.

Wherein, on the plane where the base substrate 310 is located, the projection center of the color resist unit 3300 coincides with the projection center of the corresponding auxiliary measurement pattern layer 400 and the projection center of the auxiliary measurement through hole in the auxiliary measurement pattern layer 400, and the color The projected size of the resistance unit 3300 is larger than the projected size of the auxiliary measurement through hole.

With reference to FIGS. 9 to 13 , taking the shape of the color resistance unit 3300 , the auxiliary measurement pattern layer 400 , and the auxiliary measurement through hole 410 all rectangular as an example, on the basis that the auxiliary measurement pattern layer 400 has the auxiliary measurement through hole 410 , When the auxiliary measurement pattern layer 400 coincides with the projection center of the auxiliary measurement through hole 410 , it means that the auxiliary measurement through hole 410 is located at the center of the auxiliary measurement pattern layer 400 .

On this basis, when the projection center of the color resistance unit 3300 coincides with the projection center of the auxiliary measurement through hole 410, and the projected size of the color resistance unit 3300 is larger than the projection size of the auxiliary measurement through hole 410, the color resistance unit 3300 is in the auxiliary measurement through hole 410. The four peripheries of the hole 410 and the auxiliary measurement pattern layer 400 all form overlapping areas, and the overlapping areas formed with the auxiliary measurement pattern layer 400 on the opposite sides of the auxiliary measurement through hole 410 should have the same size.

In this way, when measuring the size of the color resist unit 3300 , the measuring device can first determine the positions of the four closed sides of the auxiliary measurement through hole 410 , and then move from the center of the auxiliary measurement through hole 410 to the surroundings to determine the distance from the auxiliary measurement through hole 410 respectively. The nearest edge of the edge can be used as the four edges of the color resistance unit 3300 . Compared with the prior art, since the thin film transistor layer 320 laid between the color resistance unit 3300 and the base substrate 310 is eliminated, a lot of interference is reduced, and the auxiliary measurement is performed only by setting the auxiliary measurement through hole 410, so that the measurement color resistance can be improved. Accuracy at cell size.

In the COA type array substrate provided by the embodiment of the present application, in the measurement area, by removing the thin film transistor layer, and only providing an auxiliary measurement pattern layer with auxiliary measurement through holes in the middle between the color resistance unit and the base substrate, As a reference for measuring the physical properties of the color resist unit, the interference of the thin film transistor layer on the color resist unit can be reduced, and the measurement accuracy of the color resist unit can be improved.

Optionally, as a possible implementation manner, a color resistance unit 3300 is provided on the side of the auxiliary measurement pattern layer 400 located in the odd-numbered or even-numbered columns away from the base substrate 310 .

Alternatively, as another possible implementation manner, a color resistance unit 3300 is provided on the side of the auxiliary measurement pattern layer located in the odd-numbered or even-numbered rows away from the base substrate 310 .

As shown in FIG. 9 and FIG. 10 , when the color resistance unit 3300 is provided only on the side of the auxiliary measurement pattern layers 400 in odd columns that are far away from the base substrate 310 , since the auxiliary measurement pattern layers 400 in the even columns are far away from the base substrate 310 The color resist unit 3300 is not provided on one side of the , so a gap is formed between the auxiliary measurement pattern layers 400 in every two columns, thereby reducing the density of the color resist unit 3300 in the row direction. The mutual interference between the color resist units 3300 is avoided, and the accuracy of detecting the opposite sides of the auxiliary measurement pattern layer 400 extending along the column direction is improved.

Similarly, only in odd columns, or only in odd rows, or only in even rows, on the side of the auxiliary measurement pattern layer 400 away from the base substrate 310, the color resistance unit 3300 is provided, which can correspondingly improve the detection color resistance. The accuracy of the physical characteristics of the unit 3300.

Optionally, as a possible implementation manner, a color resistance unit is provided on the side of the auxiliary measurement pattern layer 400 located in odd rows and odd columns and even rows and even columns away from the base substrate 310 .

Optionally, as another possible implementation manner, a color resistance unit is provided on the side of the auxiliary measurement pattern layer 400 located in odd rows and even columns and even rows and odd columns away from the base substrate 310 .

As shown in FIG. 11 and FIG. 12 , when the color resist unit 3300 is disposed on the side of the auxiliary measurement pattern layer 400 in odd rows and even columns and even rows and odd columns away from the base substrate 310, due to the odd rows and odd columns and even rows The color resistance unit 3300 is not provided on the side of the auxiliary measurement pattern layer 400 of the even-numbered columns away from the base substrate 310, so for an auxiliary measurement pattern layer 400 provided with the color resistance unit 3300, the auxiliary measurement pattern layer 400 at the adjacent positions of the upper, lower, left, and right edges The color resistance unit 3300 is not provided on the side of the measurement pattern layer 400 away from the base substrate 310, and a certain gap is formed. Therefore, the density of the color resistance unit 3300 is reduced in both the row direction and the column direction. In the prior art, the mutual interference between the color resist units 3300 is reduced, and the accuracy of detecting the physical characteristics of the color resist units 3300 can be improved.

Optionally, as a possible implementation manner, the auxiliary measurement pattern layer 400 includes a first auxiliary measurement pattern layer 401 and a second auxiliary measurement pattern layer 402 .

The first auxiliary measurement pattern layer 401 is an auxiliary measurement pattern layer provided with the color resistance unit 3300 on the side away from the base substrate 310 , and the second auxiliary measurement pattern layer 402 is a side away from the base substrate 310 without the color resistance unit 3300 provided. Auxiliary measurement pattern layer.

Along the row direction, the length of the first auxiliary measurement pattern layer 401 is greater than or equal to the length of the second auxiliary measurement pattern layer 402 , and the length of the first auxiliary measurement pattern layer 401 is greater than or equal to the length of the color resist unit 3300 .

It should be understood that since the color resistance unit 3300 is not disposed on the side of the second auxiliary measurement pattern layer 402 away from the base substrate 310, the area size of the color resistance unit 3300 does not affect the laying of the color resistance unit 3300. Therefore, the second auxiliary measurement pattern layer 402 is arranged along the line The length of the direction may be greater than, equal to or less than the length of the color resist unit 3300 , which may be specifically set as required, which is not limited in this embodiment of the present application.

Based on this, compared with the prior art, the size of the second auxiliary measurement pattern layer 402 in the row direction can be reduced, thereby reducing the size of the measurement area 21 in the row direction and saving the area occupied by the measurement area 21 .

It should be understood that, in order to avoid the two first auxiliary measurement pattern layers 401 arranged in the row direction, the color resist units 3300 laid on the side away from the base substrate 310 overlap each other, thus, in the row direction, the first auxiliary measurement pattern layer The length of 401 may be greater than or equal to the length of the color resist unit 3300 .

Optionally, as shown in FIG. 14 , along the column direction, the length of the first auxiliary measurement pattern layer 401 is greater than or equal to the length of the color resistance unit 3300 .

It should be understood that, in order to avoid the two first auxiliary measurement pattern layers 401 arranged in the column direction, the color resistance units 3300 laid on the side away from the base substrate 310 overlap each other, and thus, in the column direction, the first auxiliary measurement pattern layer The length of 401 may be greater than or equal to the length of the color resist unit 3300 .

In addition, along the column direction, the length of the second auxiliary measurement pattern layer 402 is greater than or equal to the length of the color resist unit 3300, and in order to facilitate the use of the first metal layer to form an integral body, the length of the first auxiliary measurement pattern layer 401 and the second auxiliary measurement The lengths of the pattern layers 402 may be equal.

Optionally, as a possible implementation manner, each color resist unit 3300 is further provided with two alignment through holes 420 with the same structure. The two alignment through holes 420 not only play the role of air outlet and buffer, but also play the role of alignment.

The two alignment vias 420 are located in the overlapping area of the color resist unit 3300 and the corresponding auxiliary measurement pattern layer 400 , and the two alignment vias 420 are respectively disposed on opposite sides of the color resist unit 3300 .

Wherein, on the plane where the base substrate 310 is located, the projected shape of the alignment through hole 420 can be a rectangle, a square, a circle, etc., or other special-shaped structures, which can be set as required. The size of the alignment through hole 420 can also be set as required.

It should be understood that since the auxiliary measurement through hole 410 is provided in the middle of the auxiliary measurement pattern layer 400, the overlapping area formed by the color resistance unit 3300 and the corresponding auxiliary measurement pattern layer 400 is: the outer edge is the same as the color resistance unit 3300 edge, and the inner A box-shaped area with the same edge as the edge of the auxiliary measurement via 410 .

Exemplarily, the two alignment vias 420 may be located on opposite sides of the color resist unit 3300 . Taking the color resist unit 3300 as a rectangle as an example, the two alignment vias 420 may be located on the short sides of the color resist unit 3300 . The opposite sides (as shown in FIG. 12 ) can also be arranged on opposite sides of the long side of the color resistance unit 3300 .

Based on this, relative to the auxiliary measurement through holes 410, the two alignment through holes 420 are respectively disposed in the area outside the short side of the color resistance unit 3300 that overlaps with the auxiliary measurement pattern layer 400, or the two alignment through holes are respectively disposed in the area of the auxiliary measurement pattern layer 400. In the area outside the long side of the color resist unit 3300 that overlaps with the auxiliary measurement pattern layer 400 .

It should be understood that, since the distribution density of the color resistance unit 3300 is reduced, and the auxiliary measurement through holes 410 are provided as reference objects for measurement, the measurement device can measure the length of the alignment through holes 420 along the row direction x and the length along the column direction y The length, compared with the prior art, can improve the measurement accuracy of the alignment through hole 420 .

Optionally, as a possible implementation manner, the center lines corresponding to the two alignment through holes 420 respectively coincide with the center lines of the color resistance unit.

It should be understood that when the two alignment vias 420 can be located on opposite sides of the short side (extending in the row direction) of the color resist unit 3300, the centerline of the two alignment vias 420 extending in the column direction and the color resist unit respectively The centerlines of the 3300 extending in the column direction are all coincident.

When the two alignment vias 420 can be located on opposite sides of the long side of the color resist unit 3300 (extending along the column direction), the centerlines of the two alignment vias 420 extending in the row direction and the color resist unit 3300 along the row The midlines extending in the direction are coincident.

It should be understood that, based on the position of the alignment through hole 420 , it can be determined whether the color resistance unit 3300 is abnormal by referring to the position of the alignment through hole 420 . For example, if the two alignment holes 420 are found not in the preset positions during the detection process (assuming the preset positions are: on opposite sides of the short side of the color resistance unit 3300 and the center of the alignment holes 420 is in the color resistance unit 3300 ) (the center line along the column direction), the positions of the two alignment through holes 420 are shifted from the preset positions. Therefore, it can be determined that the color resist unit 3300 provided with the alignment holes 420 is abnormal. The offset of the color resistance unit 3300 can be estimated according to the offset of the alignment via 420 .

Optionally, as a possible implementation manner, the display area 10 includes a plurality of sub-pixel areas 110 arranged in an array. On the plane where the base substrate 310 is located, the projected size of the auxiliary measurement through hole 410 is smaller than or equal to the sub-pixel area. The projected size of zone 110.

It should be understood that the auxiliary measurement through hole 410 is only used as a reference for measuring the color resistance unit 3300 and the alignment through hole 420 on the color resistance unit 3300. In addition, in order to avoid light leakage, the projected size of the auxiliary measurement through hole 410 should be smaller than or equal to the projected size of the sub-pixel area 110 .

The structure of the COA-type array substrate provided by the embodiments of the present application has been described above, and the following describes the measurement method of the COA-type array substrate based on the COA-type array substrate. FIG. 15 is a schematic flowchart of a method for measuring a COA array substrate according to an embodiment of the present application.

As shown in FIG. 15 , the measurement method 100 includes the following S110 to S130.

S110. The measuring device determines the position of the auxiliary measuring through hole in the measuring area of the COA-type array substrate provided in the embodiment of the present application.

S120. The measuring device determines, according to the position of the auxiliary measuring through hole, for each edge of the auxiliary measuring through hole, a target edge that is parallel to and closest to the edge, and uses the target edge as the edge of the corresponding color resistance unit.

Wherein, the center position of the auxiliary measurement through hole can be determined first, and the center position of the auxiliary measurement through hole can be diffused around, and then the target edge corresponding to each edge of the auxiliary measurement through hole can be searched separately.

S130. The measuring device determines the length of the color resist unit along the row direction and the length along the column direction according to the edge of the color resist unit.

Optionally, as a possible implementation manner, the method further includes:

The measuring device determines the size along the row direction and the size along the column direction of the alignment through hole on the color resist unit according to the position of the auxiliary measuring through hole.

It should be understood that, since the interference of the thin film transistor layer on the measurement of the color resistance unit is eliminated, the measurement accuracy of the position via holes on the color resistance unit can be improved.

Embodiments of the present application further provide a measurement device, including: a processor;

The processor executes the computer program stored in the memory to implement the method for measuring the COA type array substrate as described in the embodiments of the present application.

The beneficial effects of the measuring device provided by the embodiments of the present application are the same as those of the above-mentioned measuring method for the COA type array substrate, which will not be repeated here.

Embodiments of the present application further provide a computer-readable storage medium, where a computer program is stored in the computer-readable storage medium, and when the computer is executed by a processor, the method for measuring a COA-type array substrate provided by the embodiments of the present application is implemented.

The computer-readable storage medium provided by the embodiment of the present application has the same beneficial effects as the above-mentioned method for measuring a COA-type array substrate, and details are not described herein again.

Embodiments of the present application further provide a liquid crystal display panel, comprising: the COA-type array substrate and the opposite substrate as described in the embodiments of the present application, and a liquid crystal layer disposed between the COA-type array substrate and the opposite substrate.

The liquid crystal display panel provided by the embodiments of the present application may further include other structures, and for details, reference may be made to the partial description of FIG. 2 above.

The beneficial effects of the liquid crystal display panel provided by the embodiments of the present application are the same as the beneficial effects of the above-mentioned COA type array substrate, and are not repeated here.

Embodiments of the present application further provide a liquid crystal display device, including: the liquid crystal display panel described in the embodiments of the present application and a driving device for driving the liquid crystal display panel.

The liquid crystal display device provided in the embodiments of the present application may further include other structures, and for details, reference may be made to the above description of FIG. 2 .

The beneficial effects of the liquid crystal display device provided by the embodiments of the present application are the same as the beneficial effects of the above-mentioned COA type array substrate, which will not be repeated here.

The above are only specific embodiments of the present application, but the protection scope of the present application is not limited to Yuci. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present application. should be covered within the scope of protection of this application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

A COA type array substrate (31), comprising a base substrate (310), the COA type array substrate (31) further comprising: a display area (10) and a peripheral area ( 20), the peripheral area (20) includes a plurality of measurement areas (21);

On the base substrate (310), each measurement area (21) includes a plurality of auxiliary measurement pattern layers (400) arranged in an array, and an auxiliary measurement through hole is opened in the middle of each auxiliary measurement pattern layer (400). (410);

Along the thickness direction of the base substrate (310), on the side of the auxiliary measurement pattern layer (400) away from the base substrate (310), the measurement area (21) is further provided with a plurality of color resistors unit(3300);

Wherein, on the plane where the base substrate (310) is located, the projection center of the color resist unit (3300) and the corresponding projection center of the auxiliary measurement pattern layer (400), the auxiliary measurement pattern layer ( The projection centers of the auxiliary measuring through holes (410) in 400) are all coincident, and the projected size of the color resistance unit (3300) is larger than the projected size of the auxiliary measuring through holes (410).
The COA type array substrate (31) according to claim 1, wherein,

The color resistance unit (3300) is provided on the side of the auxiliary measurement pattern layer (400) located in the odd-numbered or even-numbered columns away from the base substrate (310); or,

The color resistance unit (3300) is disposed on the side of the auxiliary measurement pattern layer (400) located in the odd-numbered or even-numbered rows away from the base substrate (310); or,

The color resist unit (3300) is disposed on the side of the auxiliary measurement pattern layer (400) located in odd rows and odd columns and even rows and even columns away from the base substrate (310); or,

The color resist unit (3300) is disposed on the side of the auxiliary measurement pattern layer (400) located in odd rows and even columns and even rows and odd columns away from the base substrate (310).
The COA type array substrate (31) according to claim 2, wherein the auxiliary measurement pattern layer (400) comprises a first auxiliary measurement pattern layer (401) and a second auxiliary measurement pattern layer (402);

The first auxiliary measurement pattern layer (401) is the auxiliary measurement pattern layer (400) provided with a color resistance unit (3300) on a side away from the base substrate (310), and the second auxiliary measurement pattern The layer (402) is the auxiliary measurement pattern layer (400) on which the color resistance unit (3300) is not disposed on the side away from the base substrate (310);

Along the row direction, the length of the first auxiliary measurement pattern layer (401) is greater than or equal to the length of the second auxiliary measurement pattern layer (402), and the length of the first auxiliary measurement pattern layer (401) is greater than or equal to The length of the color resistance unit (3300); along the column direction, the length of the first auxiliary measurement pattern layer (401) is greater than or equal to the length of the color resistance unit (3300).
The COA type array substrate (31) according to claim 1 or 2, wherein each color resist unit (3300) is further provided with two alignment through holes (420) with the same structure;

The two alignment through holes (420) are located in the overlapping area of the color resist unit (3300) and the corresponding auxiliary measurement pattern layer (400), and the two alignment through holes (420) are respectively arranged in Opposite sides of the color resist unit (3300).
The COA-type array substrate (31) according to claim 4, wherein the center lines corresponding to the two alignment through holes (420) respectively coincide with the center lines of the color resistance unit (3300).
The COA-type array substrate (31) according to claim 1, wherein the display area (10) comprises a plurality of sub-pixel areas (110) arranged in an array;

On the plane where the base substrate (310) is located, the projected size of the auxiliary measurement through hole (410) is smaller than or equal to the projected size of the sub-pixel region (110).
The COA type array substrate (31) according to claim 1, wherein the projected size of the auxiliary measurement pattern layer (400) on the plane where the base substrate (310) is located is larger than the auxiliary measurement through hole ( 410) the projected dimension on the plane where the base substrate (310) is located.
The COA type array substrate (31) according to claim 1, wherein a plurality of the auxiliary measurement pattern layers (400) are integrally formed by a first metal layer (3201).
The COA type array substrate (31) according to claim 8, wherein the material of the first metal layer (3201) comprises copper.
The COA type array substrate (31) according to claim 1, wherein the color resist unit (3300) is one of a red color resist unit (331), a green color resist unit (332), and a blue color resist unit (333). a kind of.
The COA type array substrate (31) according to claim 4, wherein the projected shape of the alignment through hole (420) on the plane where the base substrate (310) is located is a rectangle, a square or a circle any of the .
The COA type array substrate (31) according to claim 3, wherein, along the column direction, the length of the second auxiliary measurement pattern layer (402) is greater than or equal to the length of the color resist unit (3300).
A method for measuring a COA-type array substrate (31), which is applied to a measuring device, the method comprising:

In the measurement area (21) of the COA-type array substrate (31) according to any one of claims 1-12, the position of the auxiliary measurement through hole (410) is determined;

According to the position of the auxiliary measurement through hole (410), for each edge of the auxiliary measurement through hole (410), determine the target edge that is parallel to the edge and has the closest distance, and uses the target edge as the corresponding The edge of the color resistance unit (3300);

According to the edge of the color resist unit (3300), the length of the color resist unit (3300) along the row direction and the length along the column direction are determined.
The measurement method according to claim 13, wherein the method further comprises:

According to the position of the auxiliary measurement through hole (410), the dimension along the row direction and the dimension along the column direction of the alignment through hole (420) on the color resist unit (3300) are determined.
A liquid crystal display panel (30), comprising the COA-type array substrate (31) and the opposite substrate (32) according to any one of claims 1-12, and the COA-type array substrate (31) disposed on the COA-type array substrate (31) ) and the liquid crystal layer (33) between the opposite substrate (32).