CN104576404B - 一种制作半导体底板的方法及系统 - Google Patents

一种制作半导体底板的方法及系统 Download PDF

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Publication number
CN104576404B
CN104576404B CN201410452718.4A CN201410452718A CN104576404B CN 104576404 B CN104576404 B CN 104576404B CN 201410452718 A CN201410452718 A CN 201410452718A CN 104576404 B CN104576404 B CN 104576404B
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CN
China
Prior art keywords
substrate
semiconductor particles
semiconductor
support member
sealing material
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Expired - Fee Related
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CN201410452718.4A
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English (en)
Chinese (zh)
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CN104576404A (zh
Inventor
道格拉斯·迪卡尔
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Diftek Lasers Inc
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Diftek Lasers Inc
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Publication of CN104576404A publication Critical patent/CN104576404A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Wire Bonding (AREA)
  • Laminated Bodies (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201410452718.4A 2013-09-05 2014-09-05 一种制作半导体底板的方法及系统 Expired - Fee Related CN104576404B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/019131 2013-09-05
US14/019,131 US9209019B2 (en) 2013-09-05 2013-09-05 Method and system for manufacturing a semi-conducting backplane

Publications (2)

Publication Number Publication Date
CN104576404A CN104576404A (zh) 2015-04-29
CN104576404B true CN104576404B (zh) 2019-08-09

Family

ID=51492169

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410452718.4A Expired - Fee Related CN104576404B (zh) 2013-09-05 2014-09-05 一种制作半导体底板的方法及系统

Country Status (4)

Country Link
US (1) US9209019B2 (https=)
EP (1) EP2846354B1 (https=)
JP (1) JP6362480B2 (https=)
CN (1) CN104576404B (https=)

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US9601329B2 (en) * 2014-06-04 2017-03-21 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
US10446629B2 (en) 2011-10-14 2019-10-15 Diftek Lasers, Inc. Electronic device and method of making thereof
US9859348B2 (en) 2011-10-14 2018-01-02 Diftek Lasers, Inc. Electronic device and method of making thereof
US20160257117A1 (en) * 2013-10-28 2016-09-08 Hewlett-Packard Development Company, L.P. Encapsulating a Bonded Wire with Low Profile Encapsulation
US9818903B2 (en) 2014-04-30 2017-11-14 Sunpower Corporation Bonds for solar cell metallization
EP2953158A3 (en) * 2014-06-04 2016-02-17 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
US9843024B2 (en) * 2014-12-03 2017-12-12 Universal Display Corporation Methods for fabricating OLEDs
EP3244453A1 (en) * 2015-10-09 2017-11-15 Diftek Lasers, Inc. An electronic device and method of making thereof
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
US10199255B2 (en) * 2016-03-10 2019-02-05 Infineon Technologioes AG Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck
WO2018094073A2 (en) * 2016-11-16 2018-05-24 Tokyo Electron Limited Methods of sub-resolution substrate patterning
DE102017213065B3 (de) * 2017-04-13 2018-07-05 Christian-Albrechts-Universität Zu Kiel Verfahren zur Herstellung von plankonvexen Linsenelementen und zur Herstellung eines gehäusten Bauelements auf Waferebene

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US4872607A (en) * 1988-02-04 1989-10-10 Texas Instruments Incorporated Method of bonding semiconductor material to an aluminum foil

Also Published As

Publication number Publication date
US20150064883A1 (en) 2015-03-05
EP2846354A2 (en) 2015-03-11
CN104576404A (zh) 2015-04-29
JP2015053481A (ja) 2015-03-19
JP6362480B2 (ja) 2018-07-25
EP2846354A3 (en) 2015-08-12
US9209019B2 (en) 2015-12-08
EP2846354B1 (en) 2019-05-22
HK1207207A1 (en) 2016-01-22

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