CN104540581B - 机械地流体化的硅沉积系统和方法 - Google Patents

机械地流体化的硅沉积系统和方法 Download PDF

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CN104540581B
CN104540581B CN201380036496.1A CN201380036496A CN104540581B CN 104540581 B CN104540581 B CN 104540581B CN 201380036496 A CN201380036496 A CN 201380036496A CN 104540581 B CN104540581 B CN 104540581B
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chemical species
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room
bed
fluidized
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CN104540581A (zh
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马克·W·达瑟尔
大卫·A·布雷斯勒
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
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    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/0015—Feeding of the particles in the reactor; Evacuation of the particles out of the reactor
    • B01J8/003—Feeding of the particles in the reactor; Evacuation of the particles out of the reactor in a downward flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J8/1836—Heating and cooling the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/26—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with two or more fluidised beds, e.g. reactor and regeneration installations
    • B01J8/28—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with two or more fluidised beds, e.g. reactor and regeneration installations the one above the other
    • B01J8/30—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with two or more fluidised beds, e.g. reactor and regeneration installations the one above the other the edge of a lower bed projecting beyond the edge of the superjacent bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/40—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed subjected to vibrations or pulsations
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    • C01—INORGANIC CHEMISTRY
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    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/45589—Movable means, e.g. fans
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • B01J2208/00017—Controlling the temperature
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    • B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
    • B01J2208/00176—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles outside the reactor
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    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J2208/00761—Discharging
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Glanulating (AREA)
  • Chemical Vapour Deposition (AREA)
CN201380036496.1A 2012-05-25 2013-05-09 机械地流体化的硅沉积系统和方法 Expired - Fee Related CN104540581B (zh)

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US13/481,548 US8871153B2 (en) 2012-05-25 2012-05-25 Mechanically fluidized silicon deposition systems and methods
US13/481,548 2012-05-25
PCT/US2013/040398 WO2013176902A1 (en) 2012-05-25 2013-05-09 Mechanically fluidized silicon deposition systems and methods

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US (2) US8871153B2 (enExample)
EP (1) EP2855006A4 (enExample)
JP (1) JP2015523199A (enExample)
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EA (1) EA201492201A1 (enExample)
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US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
KR101436409B1 (ko) * 2013-01-11 2014-09-01 후성정공 주식회사 나노복합소재 제조용 복합 가스 제조장치
KR101559204B1 (ko) * 2013-09-16 2015-10-13 대진대학교 산학협력단 원자층 증착기술을 이용한 코어-쉘 구조의 나노 입자 코팅장치
WO2016105507A1 (en) * 2014-12-23 2016-06-30 Sitec Gmbh Mechanically fluidized deposition systems and methods
CA2972658A1 (en) * 2014-12-30 2016-07-07 Sitec Gmbh Crystal production systems and methods
US20170096224A1 (en) * 2015-10-06 2017-04-06 Itamar Marom Vehicle seat sleeping device
WO2017066129A1 (en) 2015-10-12 2017-04-20 Applied Quantum Energies, Llc Methods and apparatuses for treating agricultural matter
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JP6813824B2 (ja) * 2016-02-05 2021-01-13 国立大学法人山形大学 酸化物薄膜形成方法及び酸化物薄膜形成装置
CN105568254B (zh) * 2016-02-24 2018-10-30 清华大学 一种用于流化床化学气相沉积反应器的气体入口设备
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US20190062914A1 (en) 2017-08-24 2019-02-28 Forge Nano, Inc. Manufacturing processes to synthesize, functionalize, surface treat and/or encapsulate powders, and applications thereof
KR102607682B1 (ko) * 2021-04-05 2023-11-30 엔티엠 주식회사 전지용 전극제 표면처리 공정 시스템
KR20230014469A (ko) * 2021-07-21 2023-01-30 주식회사 소로나 파우더 코팅 방법 및 장치

Citations (2)

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