CN104539251B - 低噪声低压差分信号发送器 - Google Patents
低噪声低压差分信号发送器 Download PDFInfo
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CN201410831527.9A CN104539251B (zh) | 2014-12-23 | 2014-12-23 | 低噪声低压差分信号发送器 |
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CN104539251A CN104539251A (zh) | 2015-04-22 |
CN104539251B true CN104539251B (zh) | 2017-05-10 |
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Families Citing this family (3)
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CN105702748B (zh) * | 2016-03-04 | 2017-08-04 | 中国科学院微电子研究所 | 一种硅基像素探测器电路及其形成方法 |
CN107370467B (zh) * | 2017-07-22 | 2020-06-09 | 上海军陶电源设备有限公司 | 一种用于dc-dc转换器的限流误差放大器电路 |
CN114153263B (zh) * | 2021-11-30 | 2023-01-24 | 杭州海康威视数字技术股份有限公司 | 低电压差分信号lvds发送器、芯片、lvds接口、终端设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101339443A (zh) * | 2008-08-08 | 2009-01-07 | 武汉大学 | 宽输出电流范围低压差线性稳压器 |
CN101931375A (zh) * | 2010-08-26 | 2010-12-29 | 成都芯源系统有限公司 | 具有高电源抑制比的放大电路 |
CN101958692A (zh) * | 2010-10-19 | 2011-01-26 | 杭州电子科技大学 | 一种低压轨至轨运算放大电路 |
CN102590649A (zh) * | 2011-09-28 | 2012-07-18 | 上海久创电气自动化设备有限公司 | 低压检测系统及方法 |
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JP4458457B2 (ja) * | 2003-07-04 | 2010-04-28 | 株式会社リコー | 半導体装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101339443A (zh) * | 2008-08-08 | 2009-01-07 | 武汉大学 | 宽输出电流范围低压差线性稳压器 |
CN101931375A (zh) * | 2010-08-26 | 2010-12-29 | 成都芯源系统有限公司 | 具有高电源抑制比的放大电路 |
CN101958692A (zh) * | 2010-10-19 | 2011-01-26 | 杭州电子科技大学 | 一种低压轨至轨运算放大电路 |
CN102590649A (zh) * | 2011-09-28 | 2012-07-18 | 上海久创电气自动化设备有限公司 | 低压检测系统及方法 |
Non-Patent Citations (1)
Title |
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0.5μm CMOS 622Mb.s-1 LVDS驱动器芯片设计;牛晓康等;《电子与封装》;20070228;第7卷(第2期);第27-29页 * |
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Denomination of invention: Low-noise low-voltage differential signal transmitter Effective date of registration: 20180420 Granted publication date: 20170510 Pledgee: Wick International Holding Co., Ltd. Pledgor: Brite Semiconductor (Shanghai) Corporation Registration number: 2018310000019 |
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Date of cancellation: 20190416 Granted publication date: 20170510 Pledgee: Wick International Holding Co., Ltd. Pledgor: Brite Semiconductor (Shanghai) Corporation Registration number: 2018310000019 |
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Address after: Room 409, building 1, 88 Chenhui Road, Kingdee Software Park, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee after: Canxin semiconductor (Shanghai) Co.,Ltd. Address before: Room 409, building 1, 88 Chenhui Road, Kingdee Software Park, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee before: BRITE SEMICONDUCTOR (SHANGHAI) Corp. |