CN104518055A - 发光二极管组件及制造方法 - Google Patents

发光二极管组件及制造方法 Download PDF

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Publication number
CN104518055A
CN104518055A CN201410507456.7A CN201410507456A CN104518055A CN 104518055 A CN104518055 A CN 104518055A CN 201410507456 A CN201410507456 A CN 201410507456A CN 104518055 A CN104518055 A CN 104518055A
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led chip
carrier
led
manufacture method
supporting body
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CN201410507456.7A
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CN104518055B (zh
Inventor
郑子淇
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Epistar Corp
Interlight Optotech Corp
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Huga Optotech Inc
Interlight Optotech Corp
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Priority to CN201811167740.9A priority Critical patent/CN109268709A/zh
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    • H—ELECTRICITY
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
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  • Led Device Packages (AREA)

Abstract

本发明公开一种发光二极管组件及制造方法，其制造方法包含有：提供一第一载具，其上置放有多个LED芯片；提供一第二载具；使第二载具与多个LED芯片相连；以及，使多个LED芯片与第一载具相分离但仍与第二载具相接。

Description

发光二极管组件及制造方法
技术领域
发明涉及发光二极管(light emitting diode；LED)组件的制作方法。
背景技术
目前生活上已经可以看到各式各样LED商品的应用，例如交通号志、机车尾灯、汽车头灯、路灯、电脑指示灯、手电筒、LED背光源等。这些商品除芯片制作工艺外，几乎都必须再经过封装程序。
图1显示传统LED组件的一整个流程。首先提供一蓝宝石基板10。接着，运用外延、薄膜、光刻、蚀刻等半导体制作工艺方法，在蓝宝石基板10上形成多个LED芯片(chip)，如同晶片(wafer)12所示。每个LED芯片中可能有一个或是多个LED单元，每个LED单元有一发光层。在发光层中，因电子空穴重结合(recombine)而发光。每个晶片12会先经过晶片允收测试(wafer acceptance test；WAT)再将合格的晶片12则进行切割，以独立出一个个的LED芯片(chip)。LED芯片也泛称LED管芯(die)。每一个LED芯片也会经过检测，依据其光电特性，像是顺向电压(forward voltage)、主波长(dominant wavelength)、发光强度(luminous intensity)等，加以分类。同一类的LED芯片被选取出来后放置于一暂时承载膜，而这个暂时承载膜可以是蓝膜(blue tape)、卷带等具有一可供芯片黏着于上的表面上。图1中的暂时承载膜B1、B2、B3上分别放置三种不同规格的LED芯片。LED封装业者则采购带有LED芯片的暂时承载膜，经过适当的封装，产生LED组件。举例来说，图1中的LED组件14中就有LED芯片16、散热基座18、焊线(bonding wire)20、封装硅胶(silicone)22、以及透镜(lens)24。
然而，将暂时承载膜上的LED芯片一个一个的取下，固着在一LED产品的基座中的制作工艺往往非常耗时。
发明内容
为解决现有技术存在的问题，本发明的实施例公开一种发光二极管组件的制造方法，包含有：提供一第一载具，其上置放有多个LED芯片；提供一第二载具；使第二载具与多个LED芯片相连；以及，使多个LED芯片与第一载具相分离，但仍与第二载具相接。
附图说明
图1为传统LED组件的制作流程的示意图；
图2为本发明一实施例的一种LED组件的制造方法的示意图；
图3为本发明一实施例的一暂时承载膜的示意图；
图4为本发明另一实施例的一透明承载体的示意图；
图5A与图5B为本发明一实施例中黏贴前的透明承载体以及暂时承载膜的示意图；
图6为本发明一实施例中黏贴后的透明承载体以及暂时承载膜的示意图；
图7为本发明一实施例中一暂时承载膜与LED芯片相分离的示意图；
图8为本发明一实施例中切割完成后，具有区域C1的一LED组件的示意图；
图9为本发明一实施例中黏贴前的一透明承载体以及一暂时承载膜的示意图；
图10为本发明一实施例中黏贴起的透明承载体以及一暂时承载膜的示意图；
图11为本发明一实施例中一暂时承载膜与LED芯片相分离的示意图；
图12为本发明一实施例中焊线形成于LED芯片上的示意图。
符号说明
10 蓝宝石基板
12 晶片
14 LED组件
16 LED芯片
18 散热基座
20 焊线
22 封装硅胶
24 透镜
102、104、106、108、110、112、114、116、118 步骤
120 LED芯片
130 沟槽
132 各向异性导电膜(异方导电膜)
134 粘着层
136 焊线
138 导电电极板
B1、B2、B3 暂时承载膜
BB1 暂时承载膜
C1、C2、C3、C4、C5、C6、C7、C8 区域
CC 透明承载体
G1、G2、G3、G4 族群
PC 印刷电路
具体实施方式
图2为依据本发明的一种LED组件的制造方法。步骤102对具有芯片的晶片12进行晶片允收测试(wafer acceptance test，WAT)，来确定其是否合乎规格。步骤104对合格的晶片12进行切割，以独立出一个个的LED芯片(chip)。步骤106对每一个LED芯片检测，依据其光电特性，像是顺向电压(forward voltage)、主波长(dominant wavelength)、发光强度(luminousintensity)等，加以分类，并将同一类的LED芯片则放置于一暂时承载膜上，这个暂时承载膜上可以是蓝膜(blue tape)。图3显示依据本发明所实施的一暂时承载膜BB1，其上黏着有属于同一类别的LED芯片120。依据位置，暂时承载膜BB1的LED芯片120大致可以分成4个族群G1、G2、G3、G4。每个族群中所有的LED芯片120的所在位置构成了一图案，而每个族群的图案大致都一样，如同图3所示。
图2中的步骤108提供一透明承载体，作为一载具的例子，其中透明承载体是相对于LED芯片所发出的光为透明的材料，例如蓝宝石、玻璃或者透明碳化硅片。步骤110在透明承载体上形成一印刷电路。图4显示依据一实施例中的一透明承载体CC，其上形成有印刷电路PC。透明承载体CC上也形成有数个沟槽130，方便之后裁切。沟槽130大致定义了八个区域C1～C8，每个区域中具有相同图案的一印刷电路PC，如同图4所示。
图2中的步骤112在印刷电路PC上形成一各向异性导电膜(anisotropicconductive film；ACF)。
图5A显示还没有黏贴在一起前的透明承载体CC以及暂时承载膜BB1的示意图。如同图5A所示，族群G1中的LED芯片120之后将会贴附在透明承载体CC的区域C1内；而族群G2中的LED芯片120将会贴附在透明承载体CC的区域C2内；以此类推。图5B显示LED芯片120粘着于暂时承载膜BB1上，且透明承载体CC上有印刷电路PC以及各向异性导电膜132。图5B中，LED芯片120还没有与透明承载体CC相接。
图2中的步骤114将暂时承载膜BB1上的LED芯片120，粘着于透明承载体CC上，如同图6所示。在图6中，LED芯片120附着于暂时承载膜BB1，而LED芯片120通过各向异性导电膜132附着于透明承载体CC上。
图2中的步骤116使暂时承载膜BB1与LED芯片120相分离，如同图7所示。举例来说，可以直接或升温后再撕开暂时承载膜BB1，其中升温的方式可以通过同时烘烤暂时承载膜BB1、LED芯片12与透明承载体CC或者仅于暂时承载膜BB1相对于LED芯片12的一侧加温，都能使暂时承载膜BB1与LED芯片120相分离。在图7中，暂时承载膜BB1与LED芯片120相分离，而LED芯片则保留在透明承载体CC上，被各向异性导电膜132所固着。
图3中暂时承载膜BB1有四个族群G1～G4的LED芯片120，分别固着于透明承载体CC中的八个区域中的四个区域(C1～C4)中。在另一实施例中，可以再将另一张与暂时承载膜BB1相同具有多个LED芯片120的暂时承载膜固着于透明承载体CC中的其他四个区域(C5～C8)中。
图2中的步骤118可以沿着沟槽130分割透明承载体CC，将八个区域(C1～C8)分别独立出来，成为8个LED组件。图8显示切割完成后，具有区域C1的一LED组件140。如同图8所示，LED组件140具有透明承载体CC中区域C1的部分，其上有印刷电路PC以及族群G1中的LED芯片120。在图8中，每个LED芯片120是以倒装的方式，固着于透明承载体CC上。两两LED芯片120之间的电连接，是由印刷电路PC跟各向异性导电膜132所提供。印刷电路PC可以传递电能，来使LED芯片120发光。
从图2到图8的实施例可知，不论暂时承载膜BB1上的LED芯片120有多少个，都可以一次性的一起贴附到透明承载体CC，也可以一次性的使LED芯片120一起脱离暂时承载膜BB1。相较于传统一次一个将LED芯片从承载膜移置到另一承载体上，图2到图8的实施例可以大幅度的简化制作步骤，增加生产量速度(throughput)。
尽管图8中的LED组件140是以倒装的方式，固着于透明承载体CC上，但是本发明并不限于此。图9显示LED芯片120粘着于暂时承载膜BB1上，且透明承载体CC上有粘着层134，但没有印刷电路PC。图9中，LED芯片120还没有附着于透明承载体CC上。
图10显示于图9后在制作过程中的一LED组件的剖视图。其中显示暂时承载膜BB1上的LED芯片120同时经由粘着层134粘着于透明承载体CC上。
图11显示于图10后在制作过程的一LED组件的剖视图，显示暂时承载膜BB1与LED芯片120相分离，而LED芯片120通过粘着层134粘着于透明承载体CC上。
如图9所显示在LED芯片120黏着于透明承载体CC之前的状态，或是如图10所显示在LED芯片120已黏着于透明承载体CC之后，可以再贴附一导电电极板138于图9或图10中的透明承载体CC上。接着在图11所示的情况下，暂时承载膜BB1与LED芯片120已经分离。如同图12所示，在LED芯片120上形成焊线136。焊线136不仅提供了LED芯片120之间的电连接也提供了LED芯片120到导电电极板138之间的电连接。如同图12所示，LED芯片120的电连接区域(也就是导电电极板138所在的区域)与LED芯片120黏着于透明承载体CC上的区域不相同；也就是在透明承载体CC上，导电电极板138所在的位置与LED芯片120所放置的位置并不重叠，而是通过焊线136使LED芯片120与导电电极板138电性连结。因此LED芯片120不是用倒装的方式固着于透明承载体CC上，而为了使LED芯片120是以正面朝上的方式粘着于透明承载体CC上，在图8中LED芯片120便是以倒装的方式，贴在透明承载体CC上。
图9到图12中的实施例与图2到图8的实施例类似，不论暂时承载膜BB1上的LED芯片120有多少个，都可以一次性的一起贴附到透明承载体CC，也可以一次性的使LED芯片120一起脱离暂时承载膜BB1。所以制作步骤可以大幅度的简化，生产量速度也能增加。
以上所述仅为本发明的数个实施例，但是各个实施例在彼此不相冲突下当可以彼此参照、合并或替换，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (10)

1.一种发光二极管组件的制造方法，包含有：
提供一第一载具，其上配置有数个LED芯片；
提供一第二载具；
使该多个LED芯片同时与该第二载具相接；以及
使该第一载具与该多个LED芯片相分离，遗留该多个LED芯片于该第二载具上。
2.如权利要求1所述的制造方法，其中，该第一载具为一蓝膜。
3.如权利要求1所述的制造方法，其中，该第二载具为透明玻璃或透明碳化硅。
4.如权利要求1所述的制造方法，还包含有：
切割一LED晶片，以产生数个未分类的LED芯片；以及
依据多个类别，对该多个未分类的LED芯片分类，其中于该第一载具上的该多个LED芯片为同一类别。
5.如权利要求1所述的制造方法，还包含有：
切割该第二载具，以独立出数个LED组件，每个该LED组件至少包含有该多个LED芯片其中之一。
6.如权利要求5所述的制造方法，其中，每一该LED组件包含有电路，用以提供电源，以使该LED组件中的该LED芯片发光。
7.如权利要求1所述的制造方法，其中，该多个LED芯片以倒装方式，固着于该第二载具上。
8.如权利要求7所述的制造方法，还包含有：
在该第二载具上，形成一印刷电路；以及
使该第一载具，通过该多个LED芯片，附着于该第二载具的该印刷电路上。
9.如权利要求8所述的制造方法，还包含有：
在该第二载具的该印刷电路上，形成一各向异性导电膜；
使该第一载具附着于该各向异性导电膜上；以及
使该第一载具脱离该多个LED芯片，保留该多个LED芯片于该各向异性导电膜上。
10.如权利要求1所述的制造方法，包含有：
在该第二载具上，形成一粘着层；
使该第一载具与该粘着层相连；以及
使该第一载具脱离该多个LED芯片，遗留该多个LED芯片于该粘着层上。
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