CN104517899A - 晶片的加工方法 - Google Patents
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Abstract
本发明提供晶片的加工方法。包括:保护部件粘贴工序,在晶片的正面上粘贴保护部件;背面磨削工序,对晶片的背面进行磨削而形成规定的厚度;改质层形成工序,从晶片的背面侧使对晶片具有透过性的波长的激光光线的聚光点定位在与分割预定线对应的内部并沿着分割预定线进行照射,在晶片的内部沿着分割预定线形成改质层;晶片支撑工序,在晶片的背面安装具有绝缘功能的加强片,并在加强片侧粘贴切割带,利用环状框架支撑该切割带的外周部;加强片加热工序,通过对晶片进行加热并对安装在晶片的背面的加强片进行加热来使加强片固化;以及分割工序,对晶片施加外力,将晶片分割成一个个器件,并将加强片沿着一个个器件进行破断。
Description
技术领域
本发明涉及一种将在正面呈格子状形成有多个分割预定线并在由该多个分割预定线划分的多个区域内形成有器件的晶片沿着分割预定线分割的晶片的加工方法。
背景技术
在半导体器件制造工序中,利用呈格子状排列在大致圆板形状的半导体晶片的正面上的分割预定线划分多个区域,在该划分出的区域内形成IC、LSI等的器件。通过将这样形成的半导体晶片沿着分割预定线进行切断,分割形成有器件的区域来制造一个个器件。
上述的半导体晶片的沿着分割预定线的切断通常使用被称为切割器的切削装置进行。该切削装置具有:卡盘工作台,其保持半导体晶片、光器件晶片等的被加工物;切削单元,其用于切削保持在该卡盘工作台上的被加工物;以及切削进给单元,其使卡盘工作台和切削单元相对移动。切削单元包括主轴单元,该主轴单元具有旋转主轴和对安装在该主轴上的切削刀片和旋转主轴进行旋转驱动的驱动机构。切削刀片由圆盘状的基座和安装在该基座的侧面外周部的环状切刃构成,切刃例如将粒径3μm左右的金刚石磨粒通过电铸固定在基座上并形成为厚度20μm左右。
但是,由于切削刀片具有20μm左右的厚度,因而作为划分器件的分割预定线,其宽度需要50μm左右,分割预定线对晶片面积所占的面积比率大,存在生产性不良的问题。
另一方面,近年来,作为分割半导体晶片等的晶片的方法,还尝试了被称为内部加工的激光加工方法:使用对晶片具有透过性的波长的脉冲激光光线,在应分割的区域的内部定位聚光点并照射脉冲激光光线。使用被称为该内部加工的激光加工方法的分割方法是这样的技术:从晶片的一个面侧使聚光点对准内部,照射对晶片具有透过性的波长的脉冲激光光线,在晶片的内部沿着分割预定线连续地形成改质层,沿着通过形成该改质层而使强度下降的分割预定线施加外力,将晶片进行破断并分割(例如,参照专利文献1)。
【专利文献1】日本专利第3408805号公报
然而,由于在晶片的正面层叠有构成器件的多个功能层,因而在使脉冲激光光线定位于晶片的内部来实施内部加工时,有必要从晶片的背面侧照射激光光线。
但是,在上下层叠器件来形成层叠半导体装置的晶片中,预先在晶片的背面安装了具有绝缘性的加强片,由于该加强片遮断激光光线,因而存在不可以从晶片的背面侧实施内部加工的问题。
发明内容
本发明是鉴于上述情况而作成的,本发明的主要技术课题是提供一种即使在晶片的背面粘贴有具有绝缘性的加强片的情况下、也可以实施内部加工的晶片的加工方法。
为了解决上述主要的技术课题,根据本发明,提供了一种晶片的加工方法,所述晶片的加工方法将晶片沿着分割预定线分割成一个个器件,该晶片在正面格子状地形成有多个分割预定线并在由该多个分割预定线划分出的多个区域内形成有器件,该晶片的加工方法的特征在于,包括:保护部件粘贴工序,在晶片的正面上粘贴保护部件;背面磨削工序,将通过该保护部件粘贴工序在正面上粘贴有保护部件的晶片的保护部件侧保持在磨削装置的卡盘工作台上,对晶片的背面进行磨削,形成规定的厚度;改质层形成工序,将通过该背面磨削工序形成为规定的厚度的晶片的保护部件侧保持在激光加工装置的卡盘工作台上,从晶片的背面侧使对晶片具有透过性的波长的激光光线的聚光点定位在与分割预定线对应的内部并沿着分割预定线进行照射,在晶片的内部沿着分割预定线形成改质层;晶片支撑工序,在实施了该改质层形成工序的晶片的背面安装具有绝缘功能的加强片,并在加强片侧粘贴切割带,利用环状框架支撑该切割带的外周部;加强片加热工序,通过对实施了该晶片支撑工序的晶片进行加热并对安装在晶片的背面的加强片进行加热来使加强片固化;以及分割工序,对晶片施加外力,将晶片沿着形成有改质层的分割预定线分割成一个个器件,并将加强片沿着一个个器件进行破断。
在实施上述加强片加热工序之前实施上述分割工序,在实施分割工序之后实施加强片加热工序。
上述晶片支撑工序使用粘贴有具有绝缘功能的加强片的切割带来实施。
在实施上述加强片加热工序之前,实施将在晶片的正面上粘贴的保护部件剥离的保护部件剥离工序。
在实施上述分割工序之前,实施将在晶片的正面上粘贴的保护部件剥离的保护部件剥离工序。
在本发明中的晶片加工方法中,实施背面磨削工序:在晶片的正面上粘贴保护部件,将该保护部件侧保持在磨削装置的卡盘工作台上,对晶片的背面进行磨削,从而磨削成规定的厚度,并且实施改质层形成工序:将磨削成规定的厚度的晶片的保护部件侧保持在激光加工装置的卡盘工作台上,使对晶片具有透过性的波长的激光光线的聚光点定位在与分割预定线对应的内部并沿着分割预定线从晶片的背面侧进行照射,从而在晶片的内部沿着分割预定线形成改质层,之后实施晶片支撑工序:在晶片的背面安装具有绝缘功能的加强片,并在加强片侧粘贴切割带,利用环状框架支撑该切割带的外周部,因而即使在晶片的背面粘贴有加强片的情况下,也可以实施在晶片的内部沿着分割预定线形成改质层的作为内部加工的改质层形成工序。然后,通过对晶片施加外力,可以将晶片沿着形成有改质层的分割预定线分割成一个个器件,并将加强片沿着一个个器件进行破断。
附图说明
图1是使用本发明的晶片的加工方法分割的半导体晶片的立体图。
图2是示出保护部件粘贴工序的说明图。
图3是用于实施背面磨削工序的磨削装置的要部立体图。
图4是示出背面磨削工序的说明图。
图5是用于实施改质层形成工序的激光加工装置的要部立体图。
图6是示出改质层形成工序的说明图。
图7是示出晶片支撑工序的一个实施方式的说明图。
图8是示出晶片支撑工序的另一个实施方式的说明图。
图9是示出加强片加热工序的说明图。
图10是用于实施分割工序的带扩张装置的立体图。
图11是示出分割工序的说明图。
图12是示出拾取工序的说明图。
标号说明
2:半导体晶片;21:分割预定线;22:器件;210:改质层;3:保护带(保护部件);4:磨削装置;41:卡盘工作台;42:磨削单元;424:磨削轮;5:激光加工装置;51:卡盘工作台;52:激光光线照射单元;522:聚光器;6:加强片;7:加热装置;71:处理壳体;74:加热器;8:带扩张装置;81:框架保持单元;82:带扩张单元;83:拾取夹头;F:环状框架;T:切割带。
具体实施方式
以下,参照附图说明本发明的优选实施方式。
图1示出根据本发明加工的半导体晶片的立体图。图1所示的半导体晶片2由厚度例如500μm的硅晶片构成,在正面2a呈格子状形成有多个分割预定线21,并在由该多个分割预定线21划分的多个区域内形成有IC、LSI等的器件22。以下,对将该半导体晶片2沿着分割预定线21分割成一个个器件22的晶片的加工方法进行说明。
首先,为了保护形成在半导体晶片2的正面2a的器件22,实施在半导体晶片2的正面2a粘贴保护部件的保护部件粘贴工序。即,如图2所示在,半导体晶片2的正面2a粘贴作为保护部件的保护带3。另外,保护带3在本实施方式中在厚度100μm的由聚氯乙烯(PVC)构成的片状基材的正面涂布厚度5μm左右的丙烯酸树脂系的糊。
在半导体晶片2的正面2a贴附了作为保护部件的保护带之后,实施背面磨削工序:将半导体晶片2的保护部件侧保持在磨削装置的卡盘工作台上,对半导体晶片2的背面进行磨削并磨削成规定的厚度。该背面磨削工序使用图3所示的磨削装置4来实施。图3所示的磨削装置4具有:卡盘工作台41,其保持被加工物;和磨削单元42,其对保持在该卡盘工作台41上的被加工物进行磨削。卡盘工作台41构成为将被加工物吸引保持在上表面,通过未图示的旋转驱动机构使被加工物在图3中箭头41a所示的方向上旋转。磨削单元42具有:主轴外壳421;旋转主轴422,其旋转自如地被支撑在该主轴外壳421上并通过未图示的旋转驱动机构来旋转;底座423,其安装在该旋转主轴422的下端;以及磨削轮424,其安装在该底座423的下表面。该磨削轮424由圆环状的基座425、和呈环状安装在该基座425的下表面的多个磨削磨石426构成,基座425利用紧固螺栓427安装在底座423的下表面。
在使用上述的磨削装置4实施上述背面磨削工序时,如图3所示,在卡盘工作台41的上表面(保持面)上放置实施了上述保护部件粘贴工序的半导体晶片2的保护带3侧。然后,利用未图示的吸引单元在卡盘工作台41上隔着保护带3吸附保持半导体晶片2(晶片保持工序)。因此,保持在卡盘工作台41上的半导体晶片2,其背面2b成为上侧。这样,在卡盘工作台41上隔着保护带3吸引保持了半导体晶片2之后,在使卡盘工作台41在图3中箭头41a所示的方向上以例如300rpm旋转的同时,使磨削单元42的磨削轮424在图3中箭头424a所示的方向上以例如6000rpm旋转,如图4所示,使磨削磨石426与被加工面即半导体晶片2的背面2b接触,使磨削轮424如图3和图4中箭头424b所示以例如1μm/秒的磨削进给速度朝下方(与卡盘工作台41的保持面垂直的方向)磨削进给规定的量。其结果,半导体晶片2的背面2b被磨削,半导体晶片2形成为规定的厚度(例如100μm)。
然后,实施改质层形成工序:将磨削成规定的厚度的半导体晶片2的保护部件侧保持在激光加工装置的卡盘工作台上,从半导体晶片2的背面侧使对半导体晶片2具有透过性的波长的激光光线的聚光点定位在与分割预定线对应的内部并沿着分割预定线进行照射,在半导体晶片2的内部沿着分割预定线形成改质层。该改质层形成工序使用图5所示的激光加工装置5来实施。图5所示的激光加工装置5具有:卡盘工作台51,其保持被加工物;激光光线照射单元52,其向保持在该卡盘工作台51上的被加工物照射激光光线;以及摄像单元53,其对保持在卡盘工作台51上的被加工物进行摄像。卡盘工作台51构成为吸引保持被加工物,通过未图示的移动机构在图5中箭头X所示的加工进给方向和箭头Y所示的分度进给方向上移动。
上述激光光线照射单元52从安装在实质上水平配置的圆筒形状的壳体521的前端的聚光器522照射脉冲激光光线。并且,安装在构成上述激光光线照射单元52的壳体521的前端部的摄像单元53在图示的实施方式中除了利用可见光线进行摄像的通常的摄像元件(CCD)以外,还由以下等构成:红外线照明单元,其向被加工物照射红外线;光学系统,其捕捉由该红外线照明单元照射的红外线;以及摄像元件(红外线CCD),其输出与由该光学系统捕捉的红外线对应的电信号,摄像单元53将所摄像的图像信号发送到后述的控制单元。
参照图5和图6对使用上述的激光加工装置5实施的改质层形成工序进行说明。
在该改质层形成工序中,首先,在上述的图5所示的激光加工装置5的卡盘工作台51上放置实施了上述磨削工序的半导体晶片2的保护带3侧。然后,利用未图示的吸引单元在卡盘工作台51上经由保护带3吸引保持半导体晶片2(晶片保持工序)。因此,保持在卡盘工作台51上的半导体晶片2,其背面2b成为上侧。这样,吸引保持了半导体晶片2的卡盘工作台51通过未图示的加工进给单元定位在摄像单元53的正下方。
当卡盘工作台51定位在摄像单元53的正下方时,利用摄像单元53和未图示的控制单元执行检测半导体晶片2的应进行激光加工的加工区域的对准作业。即,摄像单元53和未图示的控制单元执行用于形成在半导体晶片2的第1方向上的分割预定线21与沿着分割预定线21照射激光光线的激光光线照射单元52的聚光器522的位置对准的图案匹配等的图像处理,执行激光光线照射位置的对准。并且,对于形成在半导体晶片2上的在与上述第1方向正交的第2方向上延伸的分割预定线21,也同样执行激光光线照射位置的对准。此时,半导体晶片2的形成有分割预定线21的正面2a位于下侧,而由于摄像单元53如上所述具有由红外线照明单元、捕捉红外线的光学系统以及输出与红外线对应的电信号的摄像元件(红外线CCD)等构成的摄像单元,因而可以从背面2b透过来对分割预定线21进行摄像。
在如以上所述检测形成在保持于卡盘工作台51上的半导体晶片2上的分割预定线21、进行了激光光线照射位置的对准之后,如图6的(a)所示使卡盘工作台51移动到照射激光光线的激光光线照射单元52的聚光器522所在的激光光线照射区域,使规定的分割预定线21的一端(在图6的(a)中为左端)定位在激光光线照射单元52的聚光器522的正下方。然后,使从聚光器522照射的脉冲激光光线的聚光点P定位在半导体晶片2的厚度方向中间部。然后,在从聚光器522对硅晶片照射具有透过性的波长的脉冲激光光线的同时,使卡盘工作台51即半导体晶片2在图6的(a)中箭头X1所示的方向上以规定的进给速度移动。然后,如图6的(b)所示,当激光光线照射单元52的聚光器522的照射位置到达分割预定线21的另一端的位置之后,停止脉冲激光光线的照射,并停止卡盘工作台51即半导体晶片2的移动。其结果,在半导体晶片2的内部,沿着分割预定线21形成改质层210。
另外,上述改质层形成工序中的加工条件例如设定如下。
如上所述在沿着规定的分割预定线21实施了上述改质层形成工序之后,使卡盘工作台51在箭头Y所示的方向上以形成在半导体晶片2上的分割预定线21的间隔进行分度移动(分度工序),执行上述改质层形成工序。这样在沿着形成于第1方向上的全部分割预定线21实施了上述改质层形成工序之后,使卡盘工作台51旋转90度,沿着在与形成在上述第1方向上的分割预定线21正交的第2方向上延伸的分割预定线21执行上述改质层形成工序。
然后,实施晶片支撑工序:在实施了上述改质层形成工序的半导体晶片2的背面安装具有绝缘功能的加强片,并在加强片侧粘贴切割带,利用环状框架支撑该切割带的外周部。在该晶片支撑工序中的实施方式中,如图7的(a)和(b)所示,在半导体晶片2的背面2b安装具有绝缘功能的加强片6(加强片安装工序)。另外,加强片6具有粘着性,使用当加热时固化的树脂形成。这样在半导体晶片2的背面2b安装了加强片6之后,如图7的(c)所示,将安装有加强片6的半导体晶片2的加强片6侧粘贴在安装于环状框架F上的可伸张的切割带T上。然后,将粘贴在半导体晶片2的正面2a上的保护带3剥离(保护带剥离工序)。另外,在图7的(a)至(c)所示的实施方式中,示出在安装于环状框架F上的切割带T上粘贴安装有加强片6的半导体晶片2的加强片6侧的例子,然而可以在安装有加强片6的半导体晶片2的加强片6侧粘贴切割带T,并将切割带T的外周部同时安装在环状框架F上。
参照图8对上述的晶片支撑工序的另一实施方式进行说明。
在图8所示的实施方式中,使用在切割带T的正面预先粘贴有加强片6的带有加强片的切割带。即,如图8的(a)、(b)所示在以覆盖环状框架F的内侧开口部的方式粘贴于安装有外周部的切割带T的正面的加强片6上安装半导体晶片2的背面2b。这样在使用带有加强片的切割带的情况下,通过在粘贴于切割带T的正面上的加强片6上安装半导体晶片2的背面2b,使得安装有加强片6的半导体晶片2由安装在环状框架F上的切割带T支撑。然后,如图8的(b)所示,将粘贴在半导体晶片2的正面2a上的保护带3剥离(保护带剥离工序)。另外,在图8的(a)、(b)所示的实施方式中,示出在粘贴于在环状框架F上安装有外周部的切割带T的正面上的加强片6上安装半导体晶片2的背面2b的例子,然而可以在半导体晶片2的背面2b上安装粘贴于切割带T的加强片6,并将切割带T的外周部同时安装在环状框架F上。
如上所述,由于在半导体晶片2的背面安装具有绝缘功能的加强片6并在加强片6侧粘贴切割带T、利用环状框架F支撑该切割带T的外周部的晶片支撑工序是在实施了上述的改质层形成工序之后实施,因而即使在半导体晶片2的背面粘贴了具有绝缘性的加强片6的情况下,也可以实施在半导体晶片2的内部沿着分割预定线21形成改质层210的作为内部加工的改质层形成工序。
然后,实施加强片加热工序:通过对实施了晶片支撑工序的半导体晶片2进行加热并对安装在半导体晶片2的背面的加强片6进行加热来使加强片6固化。该加强片加热工序使用图9所示的加热装置7来实施。加热装置7由以下构成:上端开放的处理壳体71;壳体盖72,其闭塞盖处理壳体71的上端;被加工物放置台73,其配设在处理壳体71内并放置被加工物;以及加热器74,其配设在壳体盖72的内面。在使用这样构成的加热装置7来实施加强片加热工序时,开放壳体盖72,在被加工物放置台73上放置贴附有安装在半导体晶片2的背面的加强片6的、安装在环状框架F上的切割带T侧。因此,经由切割带T放置在被加工物放置台73上的半导体晶片2的正面2a成为上侧。这样在被加工物放置台73上放置了以半导体晶片2的正面2a为上安装在环状框架F上的切割带T侧之后,闭塞壳体盖72,之后使加热器74进行工作,对放置在被加工物放置台73上的半导体晶片2进行加热,对安装在半导体晶片2的背面的加强片6进行加热。在该加强片加热工序中,在130℃时加热2小时。其结果,安装在半导体晶片2的背面的加强片6被固化。
在实施了上述的加强片加热工序之后,实施分割工序:对半导体晶片2施加外力,将半导体晶片2沿着形成有改质层210的分割预定线21分割成一个个器件22,并将加强片6沿着一个个器件22进行破断。该分割工序使用图10所示的带扩张装置8来实施。图10所示的带扩张装置8具有:框架保持单元81,其保持上述环状框架F;带扩张单元82,其对安装在保持于该框架保持单元81上的环状框架F上的切割带T进行扩张;以及拾取夹头83。框架保持单元81由以下构成:环状的框架保持单元811;和作为固定单元的多个夹子812,其配设在该框架保持部件811的外周。框架保持部件811的上面形成放置环状框架F的放置面811a,在该放置面811a上放置环状框架F。然后,放置在放置面811a上的环状框架F利用夹子812固定在框架保持部件811上。这样构成的框架保持单元81通过带扩张单元82在上下方向上可进退地被支撑。
带扩张装置82具有配设在上述环状的框架保持部件811的内侧的扩张鼓821。该扩张鼓821具有比环状框架F的内径小、比粘贴在安装于该环状框架F上的切割带T上的半导体晶片2的外径大的内径和外径。并且,扩张鼓821在下端具有支撑法兰822。本实施方式中的带扩张单元82具有使上述环状的框架保持部件811在上下方向上可进退的支撑单元823。该支撑单元823由配设在上述支撑法兰822上的多个气缸823a构成,其活塞杆823b与上述环状的框架保持部件811的下面连结。这样由多个气缸823a构成的支撑单元823使如图11的(a)所示环状的框架保持部件811在放置面811a与扩张鼓821的上端大致相同高度的基准位置、和如图11的(b)所示与扩张鼓821的上端相比预订量下方的扩张位置之间在上下方向上移动。
参照图11对使用如以上构成的带扩张装置8实施的分割工序进行说明。即,将安装有半导体晶片2的粘贴有加强片6侧的切割带T的环状框架F如图11的(a)所示放置在构成框架保持单元81的框架保持部件811的放置面811a上,利用夹子812固定在框架保持部件811上(框架保持工序)。此时,框架保持部件811定位在图11的(a)所示的基准位置。然后,使作为构成带扩张单元82的支撑单元823的多个气缸823a进行工作,使环状的框架保持部件811下降到图11的(b)所示的扩张位置。因此,固定在框架保持部件811的放置面811a上的环状框架F也下降,因而如图11的(b)所示,安装在环状框架F上的切割带T与扩张鼓821的上端缘相接而被扩张(带扩张工序)。其结果,拉伸力呈放射状作用于粘贴在切割带T上的加强片6和安装有该加强片6的半导体晶片2。这样当拉伸力呈放射状作用于加强片6和半导体晶片2时,半导体晶片2沿着分割预定线21形成有成为破断起点的改质层210,因而沿着分割预定线21被分割成一个个器件22,并在一个个器件22之间形成有间隔(s),因而拉伸力作用于通过实施上述加强片加热工序而固化的加强片6,使其沿着一个个器件22破断。
在实施了上述的分割工序之后,如图12的(a)所示,使拾取夹头83进行工作并吸附器件22(在背面安装有加强片6),从切割带T剥离并拾取,从而得到如图12的(b)所示在背面安装有沿着器件22的外周缘正确破断的加强片6的半导体器件22(拾取工序)。另外,在拾取工序中,由于如上所述安装有加强片6的一个个器件22之间的间隙S被扩张,因而可以容易拾取而不与邻接的器件22接触。
以上,根据图示的实施方式说明了本发明,然而本发明不限定于仅实施方式,能够在本发明的宗旨范围内进行各种变型。例如,在上述的实施方式中,示出在实施了上述加强片加热工序之后实施上述分割工序的例子,然而可以在实施上述加强片加热工序之前实施上述分割工序,在实施了分割工序之后实施加强片加热工序。
Claims (5)
1.一种晶片的加工方法,将晶片沿着分割预定线分割成一个个器件,其中,该晶片在正面格子状地形成有多个分割预定线并在由该多个分割预定线划分出的多个区域内形成有器件,
该晶片的加工方法的特征在于,包括:
保护部件粘贴工序,在晶片的正面粘贴保护部件;
背面磨削工序,将通过该保护部件粘贴工序在正面粘贴有保护部件的晶片的保护部件侧保持在磨削装置的卡盘工作台上,对晶片的背面进行磨削,形成规定的厚度;
改质层形成工序,将通过该背面磨削工序形成为规定的厚度的晶片的保护部件侧保持在激光加工装置的卡盘工作台上,从晶片的背面侧使对晶片具有透过性的波长的激光光线的聚光点定位在与分割预定线对应的内部并沿着分割预定线进行照射,在晶片的内部沿着分割预定线形成改质层;
晶片支撑工序,在实施了该改质层形成工序后的晶片的背面安装具有绝缘功能的加强片,并在加强片侧粘贴切割带,利用环状框架支撑该切割带的外周部;
加强片加热工序,通过对实施了该晶片支撑工序后的晶片进行加热并对安装在晶片的背面的加强片进行加热来使加强片固化;以及
分割工序,对晶片施加外力,将晶片沿着形成有改质层的分割预定线分割成一个个器件,并将加强片沿着一个个器件进行破断。
2.根据权利要求1所述的晶片的加工方法,其中,在实施该加强片加热工序之前实施该分割工序,在实施该分割工序之后实施该加强片加热工序。
3.根据权利要求1或2所述的晶片的加工方法,其中,该晶片支撑工序使用粘贴了具有绝缘功能的加强片的切割带来实施。
4.根据权利要求1所述的晶片的加工方法,其中,在实施该加强片加热工序之前,实施保护部件剥离工序,在该保护部件剥离工序中,将在晶片的正面粘贴的保护部件剥离。
5.根据权利要求2所述的晶片的加工方法,其中,在实施该分割工序之前,实施保护部件剥离工序,在该保护部件剥离工序中,将在晶片的正面粘贴的保护部件剥离。
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