CN104508803B - 等离子体处理方法 - Google Patents

等离子体处理方法 Download PDF

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Publication number
CN104508803B
CN104508803B CN201380039947.7A CN201380039947A CN104508803B CN 104508803 B CN104508803 B CN 104508803B CN 201380039947 A CN201380039947 A CN 201380039947A CN 104508803 B CN104508803 B CN 104508803B
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China
Prior art keywords
gas
plasma processing
plasma
processing space
fluoro
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CN201380039947.7A
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Chinese (zh)
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CN104508803A (zh
Inventor
原田彰俊
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201380039947.7A 2012-08-27 2013-08-07 等离子体处理方法 Active CN104508803B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012186344A JP5982223B2 (ja) 2012-08-27 2012-08-27 プラズマ処理方法、及びプラズマ処理装置
JP2012-186344 2012-08-27
US201261695630P 2012-08-31 2012-08-31
US61/695,630 2012-08-31
PCT/JP2013/071409 WO2014034396A1 (ja) 2012-08-27 2013-08-07 プラズマ処理方法、及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
CN104508803A CN104508803A (zh) 2015-04-08
CN104508803B true CN104508803B (zh) 2016-12-07

Family

ID=50183214

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380039947.7A Active CN104508803B (zh) 2012-08-27 2013-08-07 等离子体处理方法

Country Status (7)

Country Link
US (1) US9460896B2 (enExample)
EP (1) EP2879166B1 (enExample)
JP (1) JP5982223B2 (enExample)
KR (1) KR102114922B1 (enExample)
CN (1) CN104508803B (enExample)
TW (1) TWI571930B (enExample)
WO (1) WO2014034396A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6049527B2 (ja) * 2013-04-05 2016-12-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017045849A (ja) * 2015-08-26 2017-03-02 東京エレクトロン株式会社 シーズニング方法およびエッチング方法
CN108292601A (zh) * 2016-01-13 2018-07-17 应用材料公司 用于蚀刻硬件的基于氢等离子体的清洗工艺
CN107369603A (zh) * 2016-05-12 2017-11-21 中芯国际集成电路制造(上海)有限公司 去除含氧副产物、清洗刻蚀腔和形成半导体结构的方法
JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
JP6763750B2 (ja) * 2016-11-07 2020-09-30 東京エレクトロン株式会社 被処理体を処理する方法
JP6387198B1 (ja) * 2017-04-14 2018-09-05 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置の製造方法及び製造装置
US11123845B2 (en) * 2017-06-21 2021-09-21 Hp Indigo B.V. Vacuum tables
CN109962001A (zh) * 2017-12-26 2019-07-02 中微半导体设备(上海)股份有限公司 一种等离子体腔室的运行方法和等离子反应器
JP2025503638A (ja) * 2022-01-13 2025-02-04 ラム リサーチ コーポレーション 高選択比で均一な誘電体エッチング

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1725442A (zh) * 2004-07-22 2006-01-25 气体产品与化学公司 氮化钛去除方法
US20060118520A1 (en) * 2004-12-07 2006-06-08 Tokyo Electron Limited Plasma etching method
CN1787183A (zh) * 2004-12-07 2006-06-14 东京毅力科创株式会社 等离子体蚀刻方法
US20080194114A1 (en) * 2007-02-08 2008-08-14 Tokyo Electron Limited Plasma etching method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03239323A (ja) * 1990-02-16 1991-10-24 Yamaha Corp ドライエッチング方法
JP3117187B2 (ja) * 1995-12-20 2000-12-11 株式会社日立製作所 プラズマクリーニング処理方法
US5948702A (en) * 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
JPH10280151A (ja) * 1997-04-08 1998-10-20 Fujitsu Ltd Ｃｖｄ装置のクリーニング方法
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
JP4176365B2 (ja) * 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
JP5047504B2 (ja) 2005-02-05 2012-10-10 三星電子株式会社 ビアキャッピング保護膜を使用する半導体素子のデュアルダマシン配線の製造方法
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP4288252B2 (ja) * 2005-04-19 2009-07-01 パナソニック株式会社 半導体チップの製造方法
JP5705495B2 (ja) * 2010-10-07 2015-04-22 株式会社日立ハイテクノロジーズ プラズマの処理方法及びプラズマ処理装置
US20120094499A1 (en) * 2010-10-15 2012-04-19 Siu Tang Ng Method of performing an in situ chamber clean
JP6177601B2 (ja) * 2013-06-25 2017-08-09 東京エレクトロン株式会社 クリーニング方法及び基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1725442A (zh) * 2004-07-22 2006-01-25 气体产品与化学公司 氮化钛去除方法
US20060118520A1 (en) * 2004-12-07 2006-06-08 Tokyo Electron Limited Plasma etching method
CN1787183A (zh) * 2004-12-07 2006-06-14 东京毅力科创株式会社 等离子体蚀刻方法
US20080194114A1 (en) * 2007-02-08 2008-08-14 Tokyo Electron Limited Plasma etching method

Also Published As

Publication number Publication date
US9460896B2 (en) 2016-10-04
TW201413817A (zh) 2014-04-01
KR102114922B1 (ko) 2020-05-25
WO2014034396A1 (ja) 2014-03-06
JP5982223B2 (ja) 2016-08-31
CN104508803A (zh) 2015-04-08
EP2879166A4 (en) 2016-03-16
TWI571930B (zh) 2017-02-21
US20150228458A1 (en) 2015-08-13
EP2879166A1 (en) 2015-06-03
EP2879166B1 (en) 2019-10-09
JP2014045063A (ja) 2014-03-13
KR20150048134A (ko) 2015-05-06

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