CN104505386A - 一种侧向互连的堆叠封装结构 - Google Patents

一种侧向互连的堆叠封装结构 Download PDF

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Publication number
CN104505386A
CN104505386A CN201410838489.XA CN201410838489A CN104505386A CN 104505386 A CN104505386 A CN 104505386A CN 201410838489 A CN201410838489 A CN 201410838489A CN 104505386 A CN104505386 A CN 104505386A
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China
Prior art keywords
lower floor
interconnection
side direction
packaging body
upper strata
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CN201410838489.XA
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English (en)
Inventor
李君�
曹立强
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Institute of Microelectronics of CAS
National Center for Advanced Packaging Co Ltd
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Institute of Microelectronics of CAS
National Center for Advanced Packaging Co Ltd
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Priority to CN201410838489.XA priority Critical patent/CN104505386A/zh
Publication of CN104505386A publication Critical patent/CN104505386A/zh
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

本发明涉及半导体封装技术领域，公开了一种侧向互连的堆叠封装结构，包括上层封装体与下层封装体，该上层封装体与该下层封装体之间通过由多个层间焊球、再分布层与侧向互连结构构成的互连通道实现电气互连，其中，多个层间焊球形成于上层封装体与下层封装体之间，再分布层形成于下层封装体的下层塑封的顶部，侧向互连结构形成于下层封装体的下层塑封的四周。本发明利用侧向互连和塑封顶部的再分布层，提高了上封装体与下封装体之间互连通道的数量。本发明还将侧向互连结构与穿透模塑过孔技术结合，进一步提高了上封装体与下封装体之间互连通道的数量。

Description

一种侧向互连的堆叠封装结构
技术领域
本发明涉及半导体封装技术领域，尤其是一种侧向互连的堆叠封装结构。
背景技术
堆叠(Package on Package，PoP)封装是一种典型的3D封装技术，主要应用于处理器与内存系统集成，其典型产品为苹果的A7处理器。随着内存带宽需求不断提高，制约PoP封装应用的主要瓶颈为传统PoP结构上下层间互连焊球个数有限，即内存有效通道数有限。
以安靠(Amkor)，三星(Samsung)为代表的公司推出的可量产的PoP封装形式主要为两种：如图1所示的倒装芯片尺寸封装-堆叠封装(fcCSP-PoP)和如图2所示的穿透模塑过孔-倒装堆叠封装(TMV-fcPoP)。其中，上下层封装中芯片可以采用引线键合(Wire Bond，WB)、倒装焊接(Flip Chip，FC)或两者组合形式，可堆叠也可平铺。穿透模塑过孔(Through molding via，TMV)中用焊球填充实现上下层的互连。为了提高内存带宽，各个公司都致力于减少层间焊球(Solder ball)/TMV大小和间距，但是都要受到工艺和成品率的限制。
一些专利和文章也根据PoP上下封装3D互连的概念，演化出很多的封装结构，或集成了更多的功能。比如：
Amkor公司在专利System and method for shielding of Package onPackage(PoP)assemblies，US7851834B1中，面向射频(RF)在TMV-fcPoP基础上，形成带有屏蔽结构的PoP结构，如图3所示。
图4中，导电涂层32与金属线16a(接地)连接形成屏蔽结构用于RF屏蔽。导电涂层32可以用电镀，真空印刷，真空沉积，插入成型，喷涂等工艺实现。同样，此专利也适用焊球填充实现TMV上下层的互连。
台湾的半导体制造公司，采用扇入型堆叠封装(Fan-in PoP)结构，下层封装主要由聚合物层和Si基基板以及包含在内的有源芯片组成，并在过孔中填充各种介质材料形成电阻/电容无源器件[Package-on-Package(PoP)Device with Integrated Passive Device，US7692311 B2]，如图5所示。该专利中的上下封装体主要采用前道工艺和材料体系，与安靠，三星提出的传统PoP封装有显著差别。
新加坡科技研究局(A*STAR)的学者将上下两层的埋入式圆片级封装(embedded wafer level Packaging，EWLP)堆叠在一起，采用了塑封材料上的TMV和塑封顶部的再分布层(Redistribution layer，RDL)技术，并由TMV组成了基片集成波导(SIW)谐振器，集成于封装结构中，如图6所示。EWLP堆叠封装主要采用了晶圆级封装方式，与传统具有有机基板结构的PoP封装有明显区别[Rui Li，Boo Yang Jung，et al.，Novel HighPerformance Millimeter-Wave Resonator and Filter Structures usingEmbedded Wafer Level Packaging(EWLP)Technology，Electronics PackagingTechnology Conference(EPTC 2013)，pp：844-847]。
后两种封装形式，即扇入型堆叠封装(Fan-in PoP)结构和埋入式圆片级封装(embedded wafer level Packaging，EWLP)堆叠结构，相比fcCSP-PoP和TMV-fcPoP两种主流的封装形式，尚处在研究阶段，应用面相对较窄。
发明内容
(一)要解决的技术问题
有鉴于此，本发明的主要目的是针对以Amkor，三星为代表主流的PoP封装形式，层间通道数受限问题，提出一种侧向互连的堆叠封装结构，以提高层间互连通道数的数量。
(二)技术方案
为达到上述目的，本发明提供了一种侧向互连的堆叠封装结构，包括上层封装体与下层封装体，其中，该上层封装体与该下层封装体之间通过由多个层间焊球、再分布层与侧向互连结构构成的互连通道实现电气互连，多个层间焊球形成于上层封装体与下层封装体之间，再分布层形成于下层封装体的下层塑封的顶部，侧向互连结构形成于下层封装体的下层塑封的四周。
上述方案中，所述侧向互连结构上接所述再分布层中的金属层，下接所述下层封装体的下层基板，是圆形过孔或圆形过孔连排形成的四边形过孔，在通孔中依次采用化学镀、电镀工艺填充铜等金属，切片后形成分立的半过孔、多半过孔结构或立方体结构。所述侧向互连结构中的金属材料被树脂、镊金或镊钯金全部包覆或大部分包覆，以防止金属材料被氧化。
上述方案中，所述再分布层由金属层和介质层构成，金属层用于实现电气互连，介质层用于实现互连线间隔离或层间隔离。所述再分布层包含单层金属或多层金属。
上述方案中，所述多个层间焊球采用的材料是各种成份的焊锡，并且在上层封装体与下层封装体之间采用满盘排布或外圈排布。
上述方案中，所述上层封装体包括上层基板、上层裸片、以及上层塑封，其中：所述上层裸片形成于上层基板之上，上层裸片与上层基板通过导电胶或贴片胶结合，或者采用引线键合或倒装焊方式结合；所述上层塑封围绕在上层裸片周围，用于保护上层裸片；所述下层封装体包括下层基板、下层裸片、下层塑封、再分布层、侧向互连结构、以及底层球栅阵列焊球，其中：所述下层裸片形成于下层基板之上，下层裸片与下层基板通过导电胶或贴片胶结合，或者采用引线键合或倒装焊方式结合；所述下层塑封围绕在下层裸片周围，用于保护下层裸片，并支撑侧向互连结构；所述底层球栅阵列焊球形成于下层基板之下，用于实现下层封装体与PCB基板之间的电气互连。
上述方案中，所述上层基板中含有多个上层导热孔，所述下层基板中含有多个下层导热孔，该上层导热孔依次与层间焊球、再分布层包含的单层金属或多层金属、侧向互连结构及下层导热孔，形成该堆叠封装结构的3D散热通道。
上述方案中，所述再分布层与所述侧向互连结构以及所述下层基板中的地层导通时，能够形成电磁屏蔽，用于下层裸片的电磁隔离。
上述方案中，所述下层封装体还包括多个穿透模塑过孔，该穿透模塑过孔形成于部分或全部所述层间焊球之下，贯穿再分布层和下层塑封。
上述方案中，在该穿透模塑过孔中依次采用化学镀、电镀铜满孔或电镀铜环，使层间焊球、再分布层与穿透模塑过孔构成互连通道，实现该上层封装体与该下层封装体之间的电气互连。
上述方案中，所述在该穿透模塑过孔中金属铜为电镀铜环时采用塞孔技术，起到支撑再分布层的作用。所述塞孔技术采用在穿透模塑过孔中进行焊锡或填充树脂。
上述方案中，所述上层裸片或所述下层裸片至少一个，当为多个时，所述上层裸片采用堆叠、平铺、内嵌或内埋的方式设置于上层基板之上，所述下层裸片采用堆叠、平铺、内嵌或内埋的方式设置于下层基板之上。
上述方案中，所述上层裸片采用金线、铜线或银线与上层基板中的互连线及过孔实现电气互连，所述下层裸片采用可控塌陷芯片连接凸点或铜柱凸点与下层基板中的互连线和过孔实现电气互连。
上述方案中，所述上层裸片或所述下层裸片采用分立器件替代。
(三)有益效果
相对于图1所示的fcCSP-PoP和图2所示的TMV-fcPoP封装形式，本发明提供的侧向互连的堆叠封装结构，主要有以下优势：
1、本发明提供的侧向互连的堆叠封装结构，侧向互连结构工艺上加工尺寸可小于solder焊球直径，上下层间通道数量可与传统封装形式相比拟。
2、本发明提供的侧向互连的堆叠封装结构，TMV可以使用Amkor传统的焊球填充方法实现上下封装，也可以依次采用化学镀、电镀填孔方式实现上下互连，填孔可以填满或电镀铜等金属后塞满树脂等材料实现。
3、本发明提供的侧向互连的堆叠封装结构，通过侧向互连技术和RDL技术，开辟了上下层间互连的另一种形式。与TMV技术相结合后，增加量远大于传统PoP结构的1/3，显著增加应用带宽。仍可采用减少层间焊球/TMV大小和间距方法进一步提高通道数量。
4、本发明提供的侧向互连的堆叠封装结构，塑封材料上的单层/多层RDL技术使得设计更为灵活，可结合上层基板中的导热孔(thermal via)与层间焊球以及侧向互连结构，形成PoP的3D散热通道。
5、本发明提供的侧向互连的堆叠封装结构，下层封装中塑封顶部的RDL层与侧向互连结构以及下层基板中的地层导通时，可形成电磁屏蔽效果，可用于底层RF芯片的电磁隔离。区别于专利US7851834B1中的屏蔽结构：专利US7851834B1中的位于下层封装中顶部的导电图层为大面积连续接地平面，仅用于屏蔽作用，而本发明中的RDL层除了可作为屏蔽结构一部分之外，主要是作为互连通道，可为多层，制备方案也不相同；专利US7851834B1中的位于下层封装中侧面的导电图层为连续平面，而本发明中的侧向互连结构为分立的半过孔、多半过孔结构或立方体结构，制备方案也不相同。
附图说明
图1是现有技术中倒装芯片尺寸封装-堆叠封装(fcCSP-PoP)的示意图；
图2是现有技术中穿透模塑过孔-倒装堆叠封装(TMV-fcPoP)的示意图；
图3是现有技术中带有屏蔽结构的PoP结构的截面图；
图4是现有技术中带有屏蔽结构的PoP底层封装的截面图；
图5是现有技术中采用扇入型堆叠封装(Fan-in PoP)结构的截面图；
图6是现有技术中将上下两层的埋入式圆片级封装(embedded waferlevel Packaging，EWLP)堆叠封装结构的截面图；
图7是本发明提供的侧向互连的PoP封装结构的剖面图；
图8是图7中上层封装体的截面图；
图9是图7中下层封装体的截面图；
图10为侧向互连结构在下层封装体的位置的俯视图；
图11是依照本发明实施例TMV孔采用电镀铜环时PoP封装结构的截面图；
图12是依照本发明实施例TMV孔采用电镀铜满孔时PoP封装结构的截面图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明进一步详细说明。
为了进一步提高层间互连通道数，本发明利用侧向互连和塑封顶部的再分布层(Redistribution layer，RDL)，形成一种新型侧向互连的PoP封装结构。并且，将侧向互连结构与TMV技术结合后，会进一步提高上下封装的通道数量。其中，该侧向互连的PoP封装结构中的TMV依次采用化学镀、电镀铜等金属填充方式实现电气互连。
如图7所示，图7是本发明提供的侧向互连的PoP封装结构的剖面图。该PoP封装结构包括上层封装体100与下层封装体200，其中，该上层封装体100与该下层封装体200之间通过由多个层间焊球107、再分布层208与侧向互连结构206构成的互连通道实现电气互连，多个层间焊球107形成于上层封装体100与下层封装体200之间，再分布层208形成于下层封装体200的下层塑封201的顶部，侧向互连结构206形成于下层封装体200的下层塑封201的四周。
侧向互连结构206是圆形过孔或是由圆形过孔连排形成的四边形过孔，在过孔中依次采用化学镀、电镀工艺填充金属铜等金属材料，切片后形成分立的半过孔、多半过孔结构或立方体结构。侧向互连结构206中的金属材料被树脂、镊金或镊钯金等材料全部包覆或大部分包覆，以防止金属材料被氧化。侧向互连结构206上接再分布层208中的金属层，下接下层封装体200的下层基板205。再分布层208由金属层和介质层构成，金属层用于实现电气互连，介质层用于实现互连线间隔离或层间隔离。再分布层208可以包含单层金属或多层金属。多个层间焊球107采用的材料是焊锡，并且在上层封装体100与下层封装体200之间采用满盘排布或外圈排布。由于再分布层208的存在，层间焊球107的数量不受限制，可以满盘排布，也可以外圈排布。
图8是图7中上层封装体100的截面图。上层封装体100包括上层基板105、上层裸片103、以及上层塑封101。上层裸片103形成于上层基板105之上，上层裸片103与上层基板105通过导电胶或贴片胶结合，或者采用引线键合或倒装焊方式结合；上层塑封101围绕在上层裸片103周围，用于保护上层裸片103。
上层裸片103至少一个，当上层裸片103为多个时，采用堆叠、平铺、内嵌或内埋的方式设置于上层基板105之上。上层裸片103与上层基板105通过导电胶或贴片胶102结合，也可以采用引线键合或倒装焊方式结合。图8中上层裸片103采用金线、铜线或银线等键合线104与上层基板105中的互连线111及上层过孔112实现电气互连。上层裸片103也可以用分立器件替代。上层过孔112部分作为散热作用时又称过导热孔(thermal via)，导热孔的电气属性通常为接地。
图9为图7中下层封装体200的截面图。下层封装体200包括下层裸片203、下层基板205、下层塑封201、塑封顶部的再分布层(RDL)208(再分布层208包括金属层和介质层)、侧向互连结构206、以及底层球栅阵列(BGA)焊球207。下层裸片203形成于下层基板205之上，下层裸片203与下层基板205通过导电胶或贴片胶结合，或者采用引线键合或倒装焊方式结合；下层塑封201围绕在下层裸片203周围，用于保护下层裸片203，并支撑侧向互连结构206；底层球栅阵列焊球207形成于下层基板205之下，用于实现下层封装体200与PCB基板之间的电气互连。
下层裸片203至少一个，当下层裸片203为多个时，采用堆叠、平铺、内嵌或内埋的方式设置于下层基板205之上。下层裸片203与下层基板205通过导电胶或贴片胶202结合，也可以采用引线键合或倒装焊方式结合。图9中下层裸片203采用可控塌陷芯片连接凸点(Controlled Collapse ChipConnection，C4)或铜柱凸点等凸点210，与下层基板205中的互连线211和下层过孔212实现电气互连。下层裸片203也可以用分立器件替代。上层过孔112部分作为散热作用时又称过导热孔(thermal via)，导热孔的电气属性通常为接地。下层塑封201围绕在下层裸片203周围，起到保护下层裸片203和支撑垂直互连结构206的作用。
下填料209填充于凸点210之间，用于保护凸点210。替代地，也可以采用模塑底部填充(MUF)工艺取代底部填充(underfill)和塑封的工序，从而去除消除下填料209。
多个层间焊球107、再分布层208与侧向互连结构206构成互连通道，该互连通道上接上层封装体100的上层基板105，下接下层封装体200的下层基板205，完成上封装体100与下封装体200之间的电气互连。最终，本发明提供的侧向互连的PoP封装结构通过下层封装体200的底层焊球207与PCB基板之间实现电气互连。
图9中，侧向互连结构206可依次采用化学镀、电镀铜等金属工艺，侧向互连结构206中金属材料外用化学镀镊金或镊钯金等材料包覆，以防止金属材料氧化。侧向互连结构206的俯视图可为半圆形、多半圆形或矩形等多种结构，即沿着封装单元最外圈圆形或矩形中心、或偏中心切片所得，如图10所示。偏中心切片的目的是为了增强侧向互连结构206中金属/树脂与下层塑封材料201的结合力。图10仅表示侧向互连结构206相对位置信息，其中虚线表示切片前垂直互连结构外形原貌的示意图，实际制造不限于图10所示的图形。
当下层封装体200的下层塑封201顶部再分布层208、侧向互连结构206与下层基板205中的互连线/层211(接地)导通时，可形成电磁屏蔽效果。再分布层208除了可作为屏蔽结构一部分之外，主要是作为互连通道，可为多层；侧向互连结构206为分立的半过孔、多半过孔结构或立方体结构。
上层基板105中含有多个上层导热孔112，下层基板205中含有多个下层导热孔212，该上层导热孔112依次与层间焊球107、再分布层208包含的单层金属或多层金属、侧向互连结构206及下层导热孔212，形成该堆叠封装结构的3D散热通道。
本发明提供的侧向互连的PoP封装结构还可以与穿透模塑过孔(TMV)技术相结合，如图11和图12所示，除了在下层封装体200使用侧向互连结构206增加PoP封装结构的上层封装体与下层封装体之间通道的数量之外，同样可以通过减少TMV尺寸/间距来提高互连通道的数量。在该穿透模塑过孔215中依次采用化学镀、电镀铜满孔或电镀铜环，使层间焊球、再分布层与穿透模塑过孔构成互连通道，实现该上层封装体与该下层封装体之间的电气互连。当在该穿透模塑过孔中金属铜采用电镀铜环时采用塞孔技术，如图11所示，，起到支撑再分布层的作用。塞孔技术采用在穿透模塑过孔215中进行焊锡或填充树脂。侧向互连结构206即沿着封装单元最外圈圆形或矩形中心、或偏中心切片所得。偏中心切片的目的是为了增强侧向互连结构206中金属/树脂与下层塑封材料201的结合力。图11中的侧向互连结构206中的树脂大部分包覆金属铜环，以防止金属铜环氧化。图12中侧向互连结构206中金属外用化学镀镊金或镊钯金等材料包覆，以防止金属氧化。
需要注意的是，由于侧向互连结构206与TMV孔215工艺步骤同步，由于回流工艺下焊锡容易成球特性，因此侧向互连结构206塞孔不能使用焊锡。图11和图12中，213表示表贴元器件，如电阻，电容，电感等。214表示焊锡，用于元器件与下层基板205电气互连。
如图11和图12所示，下层封装体200中除了包括下层裸片203、下层基板205、下层塑封201、塑封顶部的再分布层(RDL)208(再分布层208包括金属层和介质层)、侧向互连结构206、以及底层球栅阵列(BGA)焊球207，还包括多个穿透模塑过孔(TMV)215，该穿透模塑过孔215形成于部分或全部所述层间焊球107之下，并贯穿再分布层208和下层塑封201。在实际应用中，每个层间焊球107之下不必均设置一个TMV 215，层间焊球107的数量可以大于TMV 215的数量。
在该穿透模塑过孔215中依次采用化学镀、电镀铜或焊球填充，使层间焊球107、再分布层208与穿透模塑过孔215构成互连通道，实现该上层封装体100与该下层封装体200之间的电气互连。
在该穿透模塑过孔215中金属铜是依次采用化学镀、电镀铜满孔或电镀铜环的方式，当采用电镀铜环时采用塞孔技术，以防止层间焊球107塌陷或缺锡的工艺缺陷，塞孔技术采用在穿透模塑过孔215中进行焊锡或填充树脂。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (16)

1.一种侧向互连的堆叠封装结构，包括上层封装体与下层封装体，其特征在于，该上层封装体与该下层封装体之间通过由多个层间焊球、再分布层与侧向互连结构构成的互连通道实现电气互连，其中，多个层间焊球形成于上层封装体与下层封装体之间，再分布层形成于下层封装体的下层塑封的顶部，侧向互连结构形成于下层封装体的下层塑封的四周。
2.根据权利要求1所述的侧向互连的堆叠封装结构，其特征在于，所述侧向互连结构上接所述再分布层中的金属层，下接所述下层封装体的下层基板，是圆形过孔或是由圆形过孔连排形成的四边形过孔，在过孔中依次采用化学镀、电镀工艺填充金属铜，切片形成分立的半过孔、多半过孔结构或立方体结构。
3.根据权利要求2所述的侧向互连的堆叠封装结构，其特征在于，所述侧向互连结构中的金属材料被树脂、镊金或镊钯金全部包覆或大部分包覆，以防止金属材料被氧化。
4.根据权利要求1所述的侧向互连的堆叠封装结构，其特征在于，所述再分布层由金属层和介质层构成，金属层用于实现电气互连，介质层用于实现互连线间隔离或层间隔离。
5.根据权利要求4所述的侧向互连的堆叠封装结构，其特征在于，所述再分布层包含单层金属或多层金属。
6.根据权利要求1所述的侧向互连的堆叠封装结构，其特征在于，所述多个层间焊球采用的材料是焊锡，并且在上层封装体与下层封装体之间采用满盘排布或外圈排布。
7.根据权利要求1所述的侧向互连的堆叠封装结构，其特征在于，
所述上层封装体包括上层基板、上层裸片、以及上层塑封，其中：所述上层裸片形成于上层基板之上，上层裸片与上层基板通过导电胶或贴片胶结合，或者采用引线键合或倒装焊方式结合；所述上层塑封围绕在上层裸片周围，用于保护上层裸片；
所述下层封装体包括下层基板、下层裸片、下层塑封、再分布层、侧向互连结构、以及底层球栅阵列焊球，其中：所述下层裸片形成于下层基板之上，下层裸片与下层基板通过导电胶或贴片胶结合，或者采用引线键合或倒装焊方式结合；所述下层塑封围绕在下层裸片周围，用于保护下层裸片，并支撑侧向互连结构；所述底层球栅阵列焊球形成于下层基板之下，用于实现下层封装体与PCB基板之间的电气互连。
8.根据权利要求7所述的侧向互连的堆叠封装结构，其特征在于，所述上层基板中含有多个上层导热孔，所述下层基板中含有多个下层导热孔，该上层导热孔依次与层间焊球、再分布层包含的单层金属或多层金属、侧向互连结构及下层导热孔，形成该堆叠封装结构的3D散热通道。
9.根据权利要求7所述的侧向互连的堆叠封装结构，其特征在于，所述再分布层与所述侧向互连结构以及所述下层基板中的地层导通时，能够形成电磁屏蔽，用于下层裸片的电磁隔离。
10.根据权利要求7所述的侧向互连的堆叠封装结构，其特征在于，所述下层封装体还包括多个穿透模塑过孔，该穿透模塑过孔形成于部分或全部所述层间焊球之下，贯穿再分布层和下层塑封。
11.根据权利要求10所述的侧向互连的堆叠封装结构，其特征在于，在该穿透模塑过孔中依次采用化学镀、电镀铜满孔或电镀铜环，使层间焊球、再分布层与穿透模塑过孔构成互连通道，实现该上层封装体与该下层封装体之间的电气互连。
12.根据权利要求11所述的侧向互连的堆叠封装结构，其特征在于，所述在该穿透模塑过孔中金属铜为电镀铜环时采用塞孔技术，起到支撑再分布层的作用。
13.根据权利要求12所述的侧向互连的堆叠封装结构，其特征在于，所述塞孔技术采用在穿透模塑过孔中进行焊锡或填充树脂。
14.根据权利要求7所述的侧向互连的堆叠封装结构，其特征在于，所述上层裸片或所述下层裸片至少一个，当为多个时，所述上层裸片采用堆叠、平铺、内嵌或内埋的方式设置于上层基板之上，所述下层裸片采用堆叠、平铺、内嵌或内埋的方式设置于下层基板之上。
15.根据权利要求14所述的侧向互连的堆叠封装结构，其特征在于，所述上层裸片采用金线、铜线或银线与上层基板中的互连线及过孔实现电气互连，所述下层裸片采用可控塌陷芯片连接凸点或铜柱凸点与下层基板中的互连线和过孔实现电气互连。
16.根据权利要求14所述的侧向互连的堆叠封装结构，其特征在于，所述上层裸片或所述下层裸片采用分立器件替代。
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