CN104451797A - 一种碲化铋基体的镀锡加工方法及一种补充剂 - Google Patents
一种碲化铋基体的镀锡加工方法及一种补充剂 Download PDFInfo
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- CN104451797A CN104451797A CN201410704298.4A CN201410704298A CN104451797A CN 104451797 A CN104451797 A CN 104451797A CN 201410704298 A CN201410704298 A CN 201410704298A CN 104451797 A CN104451797 A CN 104451797A
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- 239000011159 matrix material Substances 0.000 title claims abstract description 41
- 239000013589 supplement Substances 0.000 title claims abstract description 20
- 229910002899 Bi2Te3 Inorganic materials 0.000 title abstract description 10
- 238000003672 processing method Methods 0.000 title abstract 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000005238 degreasing Methods 0.000 claims abstract description 13
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- TVDSBUOJIPERQY-UHFFFAOYSA-N prop-2-yn-1-ol Chemical compound OCC#C TVDSBUOJIPERQY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 6
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- 238000000034 method Methods 0.000 claims description 39
- 238000007747 plating Methods 0.000 claims description 28
- 239000004141 Sodium laurylsulphate Substances 0.000 claims description 7
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims description 7
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- 229910019142 PO4 Inorganic materials 0.000 claims description 6
- 238000005237 degreasing agent Methods 0.000 claims description 6
- 239000013527 degreasing agent Substances 0.000 claims description 6
- 239000010452 phosphate Substances 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 238000005554 pickling Methods 0.000 claims description 5
- 235000011149 sulphuric acid Nutrition 0.000 claims description 5
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- DITXJPASYXFQAS-UHFFFAOYSA-N nickel;sulfamic acid Chemical compound [Ni].NS(O)(=O)=O DITXJPASYXFQAS-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical compound [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 claims description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 150000003385 sodium Chemical class 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 74
- 229910052759 nickel Inorganic materials 0.000 abstract description 38
- 238000009713 electroplating Methods 0.000 abstract description 15
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- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 abstract 1
- 229940081974 saccharin Drugs 0.000 abstract 1
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- 239000002344 surface layer Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 18
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- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
- C25D3/14—Electroplating: Baths therefor from solutions of nickel or cobalt from baths containing acetylenic or heterocyclic compounds
- C25D3/16—Acetylenic compounds
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Abstract
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CN201410704298.4A CN104451797B (zh) | 2014-11-28 | 2014-11-28 | 一种碲化铋基体的镀锡加工方法及一种补充剂 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106676596A (zh) * | 2017-01-09 | 2017-05-17 | 鹏南科技(厦门)有限公司 | 一种碲化铋温差致冷芯片的选择电镀区域加工方法 |
CN107227475A (zh) * | 2017-05-22 | 2017-10-03 | 广东省稀有金属研究所 | 一种碲化铋基热电材料晶片的表面处理方法 |
CN107723767A (zh) * | 2017-09-29 | 2018-02-23 | 广东先导稀材股份有限公司 | 碲铋基晶片的表面处理方法 |
CN108193218A (zh) * | 2015-04-08 | 2018-06-22 | 天津大学 | 负载钴镍钼颗粒的碲化铋纳米片在氧还原领域中的应用 |
CN110093642A (zh) * | 2019-05-17 | 2019-08-06 | 哈尔滨工业大学 | 一种热电材料和金属材料表面合金化的方法及应用 |
CN110373693A (zh) * | 2019-08-30 | 2019-10-25 | 上海戴丰科技有限公司 | 一种晶圆级封装滤波器电极的制备方法 |
CN112979342A (zh) * | 2021-03-16 | 2021-06-18 | 郑州大学 | 一种热电材料碲化铋表面微孔道调节方法及表面镀镍的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101388350A (zh) * | 2008-10-30 | 2009-03-18 | 常州星海半导体器件有限公司 | Smd贴片二极管的镀锡方法 |
CN101409324A (zh) * | 2008-07-24 | 2009-04-15 | 中国科学院上海硅酸盐研究所 | 一种碲化铋基热电发电器件及其制造方法 |
CN101847685A (zh) * | 2010-04-16 | 2010-09-29 | 江西纳米克热电电子股份有限公司 | 一种耐高温稳定的碲化铋基热电半导体发电器件及其制备方法 |
CN102425879A (zh) * | 2011-09-21 | 2012-04-25 | 中国电子科技集团公司第十八研究所 | 高轨道空间用温差电致冷器的制备方法 |
-
2014
- 2014-11-28 CN CN201410704298.4A patent/CN104451797B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101409324A (zh) * | 2008-07-24 | 2009-04-15 | 中国科学院上海硅酸盐研究所 | 一种碲化铋基热电发电器件及其制造方法 |
CN101388350A (zh) * | 2008-10-30 | 2009-03-18 | 常州星海半导体器件有限公司 | Smd贴片二极管的镀锡方法 |
CN101847685A (zh) * | 2010-04-16 | 2010-09-29 | 江西纳米克热电电子股份有限公司 | 一种耐高温稳定的碲化铋基热电半导体发电器件及其制备方法 |
CN102425879A (zh) * | 2011-09-21 | 2012-04-25 | 中国电子科技集团公司第十八研究所 | 高轨道空间用温差电致冷器的制备方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108193218A (zh) * | 2015-04-08 | 2018-06-22 | 天津大学 | 负载钴镍钼颗粒的碲化铋纳米片在氧还原领域中的应用 |
CN108193218B (zh) * | 2015-04-08 | 2019-06-11 | 天津大学 | 负载钴镍钼颗粒的碲化铋纳米片在氧还原领域中的应用 |
CN106676596A (zh) * | 2017-01-09 | 2017-05-17 | 鹏南科技(厦门)有限公司 | 一种碲化铋温差致冷芯片的选择电镀区域加工方法 |
CN106676596B (zh) * | 2017-01-09 | 2019-01-29 | 鹏南科技(厦门)有限公司 | 一种碲化铋温差致冷芯片的选择电镀区域加工方法 |
CN107227475A (zh) * | 2017-05-22 | 2017-10-03 | 广东省稀有金属研究所 | 一种碲化铋基热电材料晶片的表面处理方法 |
CN107723767A (zh) * | 2017-09-29 | 2018-02-23 | 广东先导稀材股份有限公司 | 碲铋基晶片的表面处理方法 |
CN110093642A (zh) * | 2019-05-17 | 2019-08-06 | 哈尔滨工业大学 | 一种热电材料和金属材料表面合金化的方法及应用 |
CN110373693A (zh) * | 2019-08-30 | 2019-10-25 | 上海戴丰科技有限公司 | 一种晶圆级封装滤波器电极的制备方法 |
CN112979342A (zh) * | 2021-03-16 | 2021-06-18 | 郑州大学 | 一种热电材料碲化铋表面微孔道调节方法及表面镀镍的方法 |
CN112979342B (zh) * | 2021-03-16 | 2022-05-17 | 郑州大学 | 一种热电材料碲化铋表面微孔道调节方法及表面镀镍的方法 |
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