CN104409580A - 一种GaN基LED外延片及其制备方法 - Google Patents
一种GaN基LED外延片及其制备方法 Download PDFInfo
- Publication number
- CN104409580A CN104409580A CN201410634108.6A CN201410634108A CN104409580A CN 104409580 A CN104409580 A CN 104409580A CN 201410634108 A CN201410634108 A CN 201410634108A CN 104409580 A CN104409580 A CN 104409580A
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- layer
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- base led
- epitaxial wafer
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- 238000002360 preparation method Methods 0.000 title claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 20
- 239000010980 sapphire Substances 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003054 catalyst Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 13
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 9
- 229910021617 Indium monochloride Inorganic materials 0.000 claims description 8
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical group C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000004575 stone Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410634108.6A CN104409580B (zh) | 2014-11-12 | 2014-11-12 | 一种GaN基LED外延片及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410634108.6A CN104409580B (zh) | 2014-11-12 | 2014-11-12 | 一种GaN基LED外延片及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN104409580A true CN104409580A (zh) | 2015-03-11 |
CN104409580B CN104409580B (zh) | 2017-02-01 |
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CN201410634108.6A Active CN104409580B (zh) | 2014-11-12 | 2014-11-12 | 一种GaN基LED外延片及其制备方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105914272A (zh) * | 2016-05-19 | 2016-08-31 | 芜湖德豪润达光电科技有限公司 | 一种发光二极管外延片及其制备方法 |
CN106449913A (zh) * | 2016-10-20 | 2017-02-22 | 浙江大学 | 石墨烯/银量子点/氮化镓双向发光二极管及其制备方法 |
CN107083535A (zh) * | 2017-04-18 | 2017-08-22 | 大连理工大学 | 石墨烯改性图形化金属衬底上的氮化镓基薄膜及制备方法 |
CN108767079A (zh) * | 2018-05-31 | 2018-11-06 | 扬州乾照光电有限公司 | 基于石墨烯衬底的led外延结构及生长方法和led |
CN108807627A (zh) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | 一种大功率垂直结构led外延结构及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101931035A (zh) * | 2009-06-23 | 2010-12-29 | 日本冲信息株式会社 | 氮化物半导体层分离方法、半导体器件和晶片及制造方法 |
WO2012047068A2 (ko) * | 2010-10-07 | 2012-04-12 | 서울대학교산학협력단 | 발광소자 및 그 제조방법 |
CN102627274A (zh) * | 2012-04-23 | 2012-08-08 | 中国科学院上海微系统与信息技术研究所 | 一种制备石墨烯的方法 |
CN103258926A (zh) * | 2013-04-28 | 2013-08-21 | 西安交通大学 | 一种led垂直芯片结构及制作方法 |
US20140220764A1 (en) * | 2013-02-05 | 2014-08-07 | International Business Machines Corporation | Thin film wafer transfer and structure for electronic devices |
CN103981507A (zh) * | 2014-05-21 | 2014-08-13 | 电子科技大学 | 一种石墨烯制备方法 |
CN104045079A (zh) * | 2014-06-25 | 2014-09-17 | 无锡格菲电子薄膜科技有限公司 | 在蓝宝石与外延金属界面外延生长石墨烯的方法 |
-
2014
- 2014-11-12 CN CN201410634108.6A patent/CN104409580B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101931035A (zh) * | 2009-06-23 | 2010-12-29 | 日本冲信息株式会社 | 氮化物半导体层分离方法、半导体器件和晶片及制造方法 |
WO2012047068A2 (ko) * | 2010-10-07 | 2012-04-12 | 서울대학교산학협력단 | 발광소자 및 그 제조방법 |
CN102627274A (zh) * | 2012-04-23 | 2012-08-08 | 中国科学院上海微系统与信息技术研究所 | 一种制备石墨烯的方法 |
US20140220764A1 (en) * | 2013-02-05 | 2014-08-07 | International Business Machines Corporation | Thin film wafer transfer and structure for electronic devices |
CN103985628A (zh) * | 2013-02-05 | 2014-08-13 | 国际商业机器公司 | 用于晶片转移的方法 |
CN103258926A (zh) * | 2013-04-28 | 2013-08-21 | 西安交通大学 | 一种led垂直芯片结构及制作方法 |
CN103981507A (zh) * | 2014-05-21 | 2014-08-13 | 电子科技大学 | 一种石墨烯制备方法 |
CN104045079A (zh) * | 2014-06-25 | 2014-09-17 | 无锡格菲电子薄膜科技有限公司 | 在蓝宝石与外延金属界面外延生长石墨烯的方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105914272A (zh) * | 2016-05-19 | 2016-08-31 | 芜湖德豪润达光电科技有限公司 | 一种发光二极管外延片及其制备方法 |
CN105914272B (zh) * | 2016-05-19 | 2018-10-02 | 芜湖德豪润达光电科技有限公司 | 一种发光二极管外延片及其制备方法 |
CN106449913A (zh) * | 2016-10-20 | 2017-02-22 | 浙江大学 | 石墨烯/银量子点/氮化镓双向发光二极管及其制备方法 |
CN107083535A (zh) * | 2017-04-18 | 2017-08-22 | 大连理工大学 | 石墨烯改性图形化金属衬底上的氮化镓基薄膜及制备方法 |
CN108807627A (zh) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | 一种大功率垂直结构led外延结构及其制备方法 |
CN108767079A (zh) * | 2018-05-31 | 2018-11-06 | 扬州乾照光电有限公司 | 基于石墨烯衬底的led外延结构及生长方法和led |
Also Published As
Publication number | Publication date |
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CN104409580B (zh) | 2017-02-01 |
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Effective date of registration: 20190312 Address after: No. 518-5 Zhonghui Road, Standard Factory Building of Chang'an Industrial Park, Huishan Economic Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee after: Wuxi Sixth Element Electronic Film Technology Co., Ltd. Address before: No. 518-5 Zhonghui Road, Standard Factory Building of Chang'an Industrial Park, Huishan Economic Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee before: Wuxi Gefei Electronic Film Technology Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 213100 floor 1, building 4, No. 6, Xiangyun Road, West Taihu science and Technology Industrial Park, Changzhou City, Jiangsu Province Patentee after: Changzhou sixth element Semiconductor Co.,Ltd. Address before: No. 518-5 Zhonghui Road, Standard Factory Building of Chang'an Industrial Park, Huishan Economic Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee before: WUXI SIXTH ELEMENT ELECTRONIC FILM TECHNOLOGY Co.,Ltd. |