CN106449913A - 石墨烯/银量子点/氮化镓双向发光二极管及其制备方法 - Google Patents
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Abstract
本发明公开了一种石墨烯/银量子点/氮化镓双向发光二极管及其制备方法，该发光二极管是自下而上依次有蓝宝石衬底层或硅衬底层、p型的氮化镓层、银量子点层、石墨烯层，在氮化镓层上还设有侧面电极，在石墨烯层上设有正面电极，所述的氮化镓层为p型多晶材料，厚度为2～10μm；本发明的石墨烯/银量子点/氮化镓双向发光二极管利用银量子点表面等离子体增强发光，同时结合石墨烯材料的高透光性、高导电性和氮化镓优异的发光性能，正反偏压下均可发光且波段多样，亮度高，制备工艺简单，成本低。
Description
技术领域
本发明涉及一种发光二极管及其制造方法，尤其涉及一种石墨烯/银量子点/氮化镓双向发光二极管及其制造方法，属于发光二极管领域。
背景技术
发光二极管以其寿命长、重量轻、体积小和污染低的优点，有望取代日光灯成为第三代照明器件，现在已经被广泛应用到照明，显示等方面。氮化镓作为宽禁带直接带隙半导体，有较大的禁带宽度(3.5eV)十分适合制作短波长发光器件。石墨烯的电子迁移率是硅的100倍，高的电子迁移率有利于提高发光二极管的发光效率；银量子点的表面等离子体增强可大幅提高器件的发光强度。在此基础上，本发明提出了石墨烯/银量子点/氮化镓结构，并利用简单工艺实现了所述发光二极管的制备。且该发光二极管正反偏压下均可工作，石墨烯接正电压时发出黄绿光，石墨烯接负电压时发蓝光。
发明内容
本发明的目的在于提供一种亮度高，工艺简单的石墨烯/银量子点/氮化镓双向发光二极管及其制备方法，该发光二极管正反偏压下均可工作，石墨烯接正电压时发出黄绿光，石墨烯接负电压时发蓝光。
本发明的石墨烯/银量子点/氮化镓双向发光二极管，其特征在于，自下而上依次有蓝宝石衬底层或硅衬底层、p型的氮化镓层、银量子点层、石墨烯层，在氮化镓层上还设有侧面电极，在石墨烯层上设有正面电极，所述的氮化镓层为p型多晶材料，厚度为2～10μm。
上述技术方案中，所述的银量子点的直径为5～100nm。
所述的正面电极为金、钯、银、钛、铬、镍的一种或者几种的复合电极。
所述的侧面电极为镍金电极。
所述的石墨烯的厚度为1-5层。
制备上述的石墨烯/银量子点/氮化镓双向发光二极管的方法，包括如下步骤：
1)在蓝宝石或硅衬底上用金属化学气相沉积法生长P型氮化镓外延层；
2)在步骤1)所得氮化镓片上用电子束蒸发镀膜方法沉积侧面电极，并预留面积；
3)将步骤2)所得氮化镓片进行表面清洗并干燥表面；
4)将银量子点旋涂至步骤3)处理后的氮化镓片的预留面积处；
5)将石墨烯转移至步骤4)制备的银量子点层上；
6)在石墨烯上制作正面电极。
与现有技术相比，本发明具有的有益效果是：本发明的发光二极管通过独特的结构设计，使得其可以实现双向发光，单个器件可发出多种波长的光，即在正反偏压下均可工作，石墨烯接正电压时发出黄绿光，石墨烯接负电压时发蓝光，且该发光二极管亮度高；工艺简单，成本低。
附图说明
图1为石墨烯/银量子点/氮化镓双向发光二极管截面图；
图2为石墨烯/银量子点/氮化镓双向发光二极管俯视图；
图3为石墨烯/银量子点/氮化镓双向发光二极管的IV曲线图；
图4为石墨烯/银量子点/氮化镓双向发光二极管在石墨烯接正偏压时的发光谱；
图5为石墨烯/银量子点/氮化镓双向发光二极管在石墨烯接负偏压时的发光谱。
具体实施方式
下面结合附图进一步说明本发明。
参照图1、2，本发明的石墨烯/银量子点/氮化镓双向发光二极管自下而上依次有蓝宝石衬底层或硅衬底层1、p型的氮化镓层2、银量子点层4、石墨烯层5，在氮化镓层2上还设有侧面电极3，在石墨烯层5上设有正面电极6，所述的氮化镓层为p型多晶材料，厚度为2～10μm。图3、4、5分别为本发明制得的发光二极管的IV曲线图、石墨烯接正偏压时的发光谱及石墨烯接负偏压时的发光谱，可以看出该发光二极管可以实现双向发光，单个器件可发出多种波长的光，即在正反偏压下均可工作，石墨烯接正电压时发出黄绿光，石墨烯接负电压时发蓝光。
实施例1
1)在蓝宝石衬底上用金属化学气相沉积法生长P型多晶氮化镓外延层,厚度2μm；
2)在氮化镓外延片一侧利用电子束蒸发法沉积镍金电极；
3)将得到的样品依次浸入去离子水，丙酮和异丙醇中进行表面清洗；
4)将直径100nm银量子点匀涂至清洗干净的氮化镓单晶片上；
5)将单层石墨烯转移至银量子点上；
6)在石墨烯上利用热蒸发工艺沉积银电极得到石墨烯/银量子点/氮化镓双向发光二极管。
实施例2
1)在硅衬底上用金属化学气相沉积法生长P型多晶氮化镓外延层,厚度4μm；
2)在氮化镓外延片一侧利用电子束蒸发法沉积镍金电极；
3)将得到的样品依次浸入去离子水，丙酮和异丙醇中进行表面清洗；
4)将50nm直径银量子点匀涂至清洗干净的氮化镓单晶片上；
5)将双层石墨烯转移至银量子点上；
6)在石墨烯上利用热蒸发工艺沉积金电极得到石墨烯/银量子点/氮化镓双向发光二极管。
实施例3
1)在硅衬底上用金属化学气相沉积法生长P型多晶氮化镓外延层,厚度8μm；
2)在氮化镓外延片一侧利用电子束蒸发法沉积镍金电极；
3)将得到的样品依次浸入去离子水，丙酮和异丙醇中进行表面清洗；
4)将10nm直径银量子点匀涂至清洗干净的氮化镓单晶片上；
5)将三层石墨烯转移至银量子点上；
6)在石墨烯上利用热蒸发工艺沉积钛电极得到石墨烯/银量子点/氮化镓双向发光二极管。
实施例4
1)在硅衬底上用金属化学气相沉积法生长P型多晶氮化镓外延层,厚度10μm；
2)在氮化镓外延片一侧利用电子束蒸发法沉积镍金电极；
3)将得到的样品依次浸入去离子水，丙酮和异丙醇中进行表面清洗；
4)将5nm直径银量子点匀涂至清洗干净的氮化镓单晶片上；
5)将五层石墨烯转移至银量子点上；
6)在石墨烯上利用热蒸发工艺沉积银电极得到石墨烯/银量子点/氮化镓双向发光二极管。
Claims (6)
1.一种石墨烯/银量子点/氮化镓双向发光二极管，其特征在于，自下而上依次有蓝宝石衬底层或硅衬底层(1)、p型的氮化镓层(2)、银量子点层(4)、石墨烯层(5)，在氮化镓层(2)上还设有侧面电极(3)，在石墨烯层(5)上设有正面电极(6)，所述的氮化镓层为p型多晶材料，厚度为2～10μm。
2.根据权利要求1所述的石墨烯/银量子点/氮化镓双向发光二极管，其特征在于，所述的银量子点的直径为5～100nm。
3.根据权利要求1所述的石墨烯/银量子点/氮化镓双向发光二极管，其特征在于，所述的正面电极为金、钯、银、钛、铬、镍的一种或者几种的复合电极。
4.根据权利要求1所述的石墨烯/银量子点/氮化镓双向发光二极管，其特征在于，所述的侧面电极为镍金电极。
5.根据权利要求1所述的石墨烯/银量子点/氮化镓双向发光二极管，其特征在于，所述的石墨烯的厚度为1-5层。
6.制备如权利要求1-5任一项所述的石墨烯/银量子点/氮化镓双向发光二极管的方法，其特征在于，该方法包括如下步骤：
1)在蓝宝石或硅衬底上用金属化学气相沉积法生长P型氮化镓外延层；
2)在步骤1)所得氮化镓片上用电子束蒸发镀膜方法沉积侧面电极，并预留面积；
3)将步骤2)所得氮化镓片进行表面清洗并干燥表面；
4)将银量子点旋涂至步骤3)处理后的氮化镓片的预留面积处；
5)将石墨烯转移至步骤4)制备的银量子点层上；
6)在石墨烯上制作正面电极。
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| WO2020215441A1 (zh) * | 2019-04-25 | 2020-10-29 | 东南大学 | 一种基于N-ZnO/N-GaN/N-ZnO异质结的双向紫外发光二极管及制备方法 |
| US11575066B2 (en) | 2019-04-25 | 2023-02-07 | Southeast University | N-ZnO/N-GaN/N-ZnO heterojunction-based bidirectional ultraviolet light-emitting diode and preparation method therefor |
| CN113614933A (zh) * | 2020-03-03 | 2021-11-05 | 东莞市中麒光电技术有限公司 | 发光二极管及其制备方法 |
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