CN104355613B - 一种陶瓷组合物 - Google Patents

一种陶瓷组合物 Download PDF

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CN104355613B
CN104355613B CN201410568464.2A CN201410568464A CN104355613B CN 104355613 B CN104355613 B CN 104355613B CN 201410568464 A CN201410568464 A CN 201410568464A CN 104355613 B CN104355613 B CN 104355613B
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华文蔚
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5Elem Hi Tech Corp Technology Co Ltd
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Abstract

本发明提供了一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：B2O35～15.5、TiO25～15、Al2O33～15、MO20～35、SrTiO3或/和CaTiO325～45，M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。本发明通过采用上述技术方案可以得到容易控制煅烧时的陶瓷烧结体的收缩行为的同时介电特性提高的陶瓷组合物，可以得到能够同时实现上述收缩行为的控制和介电特性的陶瓷组合物。具体而言，可以得到具有相对介电常数εr为45以上、Q值为800以上、绝缘电阻logIR为12以上的特性、并且容易控制煅烧时的收缩行为的烧结性良好的陶瓷组合物。

Description

一种陶瓷组合物
技术领域
本发明涉及一种陶瓷组合物及其制备方法。
背景技术
高频率用电介体磁器，近年来广泛利用于例如电介体共振器和MIC用电介体基板等中。在该种类的高频率用电介体磁器中，为了实现小型化，要求相对介电常数εr和Q值大。
另一方面，在高频率用电介体磁器中，如果在导体材料中使用高熔点的钨和钼，则由于这些高熔点金属的比电阻大，因此，特别是存在在陶瓷多层基板的高频率特性上产生限界的缺点，而且价格高。因此，作为导体材料，要求使用Ag和Cu等低电阻并且廉价的低熔点金属。
但是，为了将导体材料和陶瓷材料同时煅烧而得到陶瓷烧结体，需要将陶瓷材料在比这些低熔点金属的熔点低的温度下进行煅烧。
因此，正在积极进行作为陶瓷成分与玻璃成分的复合材料的低温煅烧用陶瓷材料的研究，推进使用该材料的陶瓷多层基板的实用化。
例如，在专利文献1中，提出了一种陶瓷原料组合物，其中，包含：10～45重量％的由xBaO-yTiO2-zReO3/2(其中，x、y以及z表示摩尔％，8≤x≤18、52.5≤y≤65、以及20≤z≤40，x+y+z＝100，Re为稀土元素)表示的BaO-TiO2-ReO3/2类陶瓷组合物、5～40重量％的氧化铝、4～17.5重量％的B2O3、28～50重量％的SiO2、0～20重量％的Al2O3以及36～50重量％的MO(其中，MO为选自CaO、MgO、SrO以及BaO中的至少一种)，包含40～65重量％的硼硅酸玻璃组合物，并且所述BaO-TiO2-ReO3/2类陶瓷组合物与所 述氧化铝的合计量为35重量％以上。
在该专利文献1中，通过使其含有硼硅酸玻璃组合物，可以抑制煅烧时的陶瓷的收缩行为，另外，由于玻璃粘度高，因此，可以抑制与其他低温煅烧基板相互扩散。另外，通过使其含有上述陶瓷组合物，可以得到具有相对介电常数εr约为15的高相对介电常数的陶瓷原料组合物。
但是，上述专利文献1的陶瓷原料组合物，虽然相对介电常数εr比较高，约为15，但为了应对目前模块商品等更小型化的要求，需要更高的相对介电常数εr。
然而，为了提高相对介电常数εr，需要降低玻璃组合物的含量，提高由填料组成的陶瓷粉末的含量。另一方面，玻璃组合物的含量降低时，由于玻璃组合物的流动性降低，因此通过煅烧处理陶瓷烧结体变得容易收缩。因此，为了容易控制煅烧时的收缩行为，需要增加玻璃组合物的含量。即，存在难以实现煅烧时的陶瓷烧结体的收缩行为的控制和高相对介电常数的情况。
本发明是鉴于上述情况而进行的，其目的在于提供可以在控制煅烧时的收缩行为的同时使介电特性与以往相比显著提高、并且可以确保可靠性的陶瓷组合物、使用该陶瓷组合物的陶瓷生片、以及陶瓷电子部件。
发明内容
本发明人为了实现上述目的而进行了深入的研究，结果发现，除了特定组成的硼硅酸玻璃之外，在规定范围内添加相对介电常数εr高的SrTiO3或CaTiO3，另外在规定量以下的范围内使其含有特定的烧结助剂成分，由此，容易抑制烧结时的陶瓷烧结体的收缩行为的同时，可以得到相对介电常数εr为45以上、且Q值800以上的具有良好介电特性的低温煅烧用陶瓷组合物。
为了达到上述目的，本发明采用了如下技术方案：
一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
所述B2O3的含量例如为5.5、6、6.5、7、7.5、8、8.5、9、9.5、10、10.5、11、11.5、12、12.5、13、13.5、14、14.5或15。
所述TiO2的含量例如为5.5、6、6.5、7、7.5、8、8.5、9、9.5、10、10.5、11、11.5、12、12.5、13、13.5、14、14.5或15。
所述Al2O3的含量例如为3.5、4、4.5、5、5.5、6、6.5、7、7.5、8、8.5、9、9.5、10、10.5、11、11.5、12、12.5、13、13.5、14或14.5。
所述MO的含量例如为21、22、23、24、25、26、27、28、29、30、31、32、33或34。
所述SrTiO3或/和CaTiO3的含量例如为26、27、28、29、30、31、32、33％、34、35、36、37、38、40、41、42、43或44。
优选地，一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
优选地，一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
本发明中的陶瓷生片，上述陶瓷组合物成形为片状。
本发明中的陶瓷电子部件，具有由上述陶瓷组合物的烧结体构成的第1陶瓷层。
发明效果
本发明通过采用上述技术方案可以得到容易控制煅烧时的陶瓷烧结体的收缩行为的同时介电特性提高的陶瓷组合物，可以得到能够同时实现上述收缩行为的控制和介电特性的陶瓷组合物。具体而言，可以得到具有相对介电常数εr为45以上、Q值为800以上、绝缘电阻logIR为12以上的特性、并且容易控制煅烧时的收缩行为的烧结性良好的陶瓷组合物。
因此，可以实现应对目前模块商品等更小型化的高品质、且介电特性良好的陶瓷生片以及陶瓷电子部件。
具体实施方式
下面通过具体实施方式来进一步说明本发明的技术方案。
实施例1
一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
实施例2
一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
实施例3
一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
实施例4
一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
对比例1
其余与实施例1相同，除SrTiO3或/和CaTiO3的含量为50。
对比例2
其余与实施例1相同，除TiO2的含量为4。
对比例3
其余与实施例1相同，除TiO2的含量为17。
对实施例1～4的陶瓷组合物进行性能测试，实施例1～4的陶瓷组合物的相对介电常数εr为45以上且Q值800以上，而对比例1～3的陶瓷组合物的相对介电常数为40，且Q值为750，明显低于实施例1～4。
申请人声明，本发明通过上述实施例来说明本发明的详细方法，但本发明并不局限于上述详细方法，即不意味着本发明必须依赖上述详细方法才能实施。所属技术领域的技术人员应该明了，对本发明的任何改进，对本发明产品各原料的等效替换及辅助成分的添加、具体方式的选择等，均落在本发明的保护范围和公开范围之内。

Claims (5)

1.一种陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
2.如权利要求1所述的陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
3.如权利要求1或2所述的陶瓷组合物，所述陶瓷组合物按重量份数由如下组分组成：
M选自Ca、Mg、Sr以及Ba中的任意一种或者至少两种的组合。
4.陶瓷生片，权利要求1-3之一所述的陶瓷组合物成形为片状。
5.陶瓷电子部件，具有由权利要求1-3之一所述的陶瓷组合物的烧结体构成的第1陶瓷层。
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