CN104347320B - Mems开关设备和制造方法 - Google Patents
Mems开关设备和制造方法 Download PDFInfo
- Publication number
- CN104347320B CN104347320B CN201410367891.4A CN201410367891A CN104347320B CN 104347320 B CN104347320 B CN 104347320B CN 201410367891 A CN201410367891 A CN 201410367891A CN 104347320 B CN104347320 B CN 104347320B
- Authority
- CN
- China
- Prior art keywords
- mems
- switch
- insulating barrier
- micro
- electromechanical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00341—Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/092—Buried interconnects in the substrate or in the lid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Contacts (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/955,866 | 2013-07-31 | ||
US13/955,866 US9911563B2 (en) | 2013-07-31 | 2013-07-31 | MEMS switch device and method of fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104347320A CN104347320A (zh) | 2015-02-11 |
CN104347320B true CN104347320B (zh) | 2018-02-13 |
Family
ID=51211702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410367891.4A Active CN104347320B (zh) | 2013-07-31 | 2014-07-30 | Mems开关设备和制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9911563B2 (zh) |
EP (1) | EP2833388B1 (zh) |
CN (1) | CN104347320B (zh) |
TW (1) | TWI643231B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105575734B (zh) * | 2015-12-23 | 2018-11-06 | 北京时代民芯科技有限公司 | 一种射频mems开关及其制造方法 |
CN105621351B (zh) * | 2015-12-24 | 2017-11-07 | 中国电子科技集团公司第五十五研究所 | 一种rf mems开关的圆片级封装方法 |
US10529518B2 (en) | 2016-09-19 | 2020-01-07 | Analog Devices Global | Protection schemes for MEMS switch devices |
FI20185058A1 (en) * | 2018-01-22 | 2019-07-23 | Tikitin Oy | Packaged microelectronic component and method for its manufacture |
US11501928B2 (en) | 2020-03-27 | 2022-11-15 | Menlo Microsystems, Inc. | MEMS device built on substrate with ruthenium based contact surface material |
DE102021212369A1 (de) | 2021-11-03 | 2023-05-04 | Robert Bosch Gesellschaft mit beschränkter Haftung | Relais und Verfahren zum Betreiben eines Relais |
WO2023184375A1 (zh) * | 2022-03-31 | 2023-10-05 | 京东方科技集团股份有限公司 | 电子器件及制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010072431A1 (en) * | 2008-12-24 | 2010-07-01 | International Business Machines Corporation | Hybrid mems rf switch and method of fabricating same |
CN103011050A (zh) * | 2011-09-22 | 2013-04-03 | 矽品精密工业股份有限公司 | 半导体封装件及其制法 |
Family Cites Families (31)
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US5638946A (en) * | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
US6046659A (en) * | 1998-05-15 | 2000-04-04 | Hughes Electronics Corporation | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications |
US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
US6621390B2 (en) | 2001-02-28 | 2003-09-16 | Samsung Electronics Co., Ltd. | Electrostatically-actuated capacitive MEMS (micro electro mechanical system) switch |
WO2003041133A2 (en) * | 2001-11-09 | 2003-05-15 | Wispry, Inc. | Electrothermal self-latching mems switch and method |
US6624003B1 (en) * | 2002-02-06 | 2003-09-23 | Teravicta Technologies, Inc. | Integrated MEMS device and package |
GB0206509D0 (en) * | 2002-03-20 | 2002-05-01 | Qinetiq Ltd | Micro-Electromechanical systems |
JP2004006664A (ja) | 2002-04-10 | 2004-01-08 | Sanken Electric Co Ltd | 半導体素子の製造方法 |
US6686820B1 (en) * | 2002-07-11 | 2004-02-03 | Intel Corporation | Microelectromechanical (MEMS) switching apparatus |
US7042308B2 (en) * | 2004-06-29 | 2006-05-09 | Intel Corporation | Mechanism to prevent self-actuation in a microelectromechanical switch |
US7442570B2 (en) * | 2005-03-18 | 2008-10-28 | Invensence Inc. | Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom |
CN101228301A (zh) | 2005-05-19 | 2008-07-23 | Memc电子材料有限公司 | 高电阻率硅结构和用于制备该结构的方法 |
JP5188673B2 (ja) | 2005-06-09 | 2013-04-24 | 株式会社Sumco | Igbt用のシリコンウェーハ及びその製造方法 |
US7321275B2 (en) * | 2005-06-23 | 2008-01-22 | Intel Corporation | Ultra-low voltage capable zipper switch |
US7968364B2 (en) * | 2005-10-03 | 2011-06-28 | Analog Devices, Inc. | MEMS switch capping and passivation method |
US7956633B2 (en) * | 2006-03-06 | 2011-06-07 | Formfactor, Inc. | Stacked guard structures |
JP4265630B2 (ja) * | 2006-08-04 | 2009-05-20 | セイコーエプソン株式会社 | Memsスイッチ、電圧分割回路、利得調整回路、減衰器及びmemsスイッチの製造方法 |
US8194382B2 (en) * | 2006-12-22 | 2012-06-05 | Analog Devices, Inc. | Method and apparatus for driving a switch |
DE102006061386B3 (de) | 2006-12-23 | 2008-06-19 | Atmel Germany Gmbh | Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung |
US7692519B2 (en) * | 2007-12-21 | 2010-04-06 | General Electric Company | MEMS switch with improved standoff voltage control |
US7615845B1 (en) * | 2008-06-25 | 2009-11-10 | Infineon Technologies Sensonor As | Active shielding of conductors in MEMS devices |
JP2010056316A (ja) | 2008-08-28 | 2010-03-11 | Sumco Corp | シリコンウェーハ及びその製造方法 |
US8294539B2 (en) * | 2008-12-18 | 2012-10-23 | Analog Devices, Inc. | Micro-electro-mechanical switch beam construction with minimized beam distortion and method for constructing |
US20100156577A1 (en) * | 2008-12-22 | 2010-06-24 | General Electric Company | Micro-electromechanical system switch |
US8102637B2 (en) * | 2009-07-22 | 2012-01-24 | Analog Devices, Inc. | Control techniques for electrostatic microelectromechanical (MEM) structure |
US8569091B2 (en) * | 2009-08-27 | 2013-10-29 | International Business Machines Corporation | Integrated circuit switches, design structure and methods of fabricating the same |
JP2012079889A (ja) * | 2010-09-30 | 2012-04-19 | Toshiba Corp | 半導体装置 |
US8797127B2 (en) | 2010-11-22 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS switch with reduced dielectric charging effect |
WO2013033613A2 (en) * | 2011-09-02 | 2013-03-07 | Cavendish Kinetics, Inc | Rf mems isolation, series and shunt dvc, and small mems |
US10283582B2 (en) * | 2013-02-25 | 2019-05-07 | Analog Devices Global | Microelectronic circuits and integrated circuits including a non-silicon substrate |
US20150170911A1 (en) | 2013-12-16 | 2015-06-18 | Analog Devices Technology | Silicon substrate suitable for use with an rf component, and an rf component formed on such a silicon substrate |
-
2013
- 2013-07-31 US US13/955,866 patent/US9911563B2/en active Active
-
2014
- 2014-07-23 EP EP14178181.5A patent/EP2833388B1/en active Active
- 2014-07-28 TW TW103125617A patent/TWI643231B/zh active
- 2014-07-30 CN CN201410367891.4A patent/CN104347320B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010072431A1 (en) * | 2008-12-24 | 2010-07-01 | International Business Machines Corporation | Hybrid mems rf switch and method of fabricating same |
CN103011050A (zh) * | 2011-09-22 | 2013-04-03 | 矽品精密工业股份有限公司 | 半导体封装件及其制法 |
Also Published As
Publication number | Publication date |
---|---|
EP2833388A3 (en) | 2015-03-11 |
EP2833388B1 (en) | 2023-12-13 |
EP2833388A2 (en) | 2015-02-04 |
CN104347320A (zh) | 2015-02-11 |
TW201508801A (zh) | 2015-03-01 |
US9911563B2 (en) | 2018-03-06 |
TWI643231B (zh) | 2018-12-01 |
US20150035387A1 (en) | 2015-02-05 |
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