CN104342637A - 一种原子层沉积设备 - Google Patents
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Abstract
本发明提供一种原子层沉积设备，包括反应腔室和气源，反应腔室内包括设置在顶部的气体分配板、基盘和旋转驱动机构，基盘上表面与气体分配板的下表面相互叠置，且在二者之间形成有沿反应腔室的周向间隔且均匀分布多个子空间，多个子空间按工序的先后顺序排列，每个子空间用于对基片完成单次工艺中的其中一个工序；旋转驱动机构用于驱动基盘相对于气体分配板旋转，以使基盘带动置于其上的所有基片按工序的先后顺序依次置于各个子空间内进行工艺。本发明提供的原子层沉积设备，其可实现不同工序在同一时间加工多个基片，从而提高工艺效率，进而提高产能。
Description
技术领域
本发明属于微电子加工技术领域，具体涉及一种原子层沉积设备。
背景技术
在微电子加工技术领域，原子层沉积设备（ALD）是一种将物质以单原子膜的形式一层一层沉积在基底表面的设备。由于其沉积材料的多样性和沉积厚度的精准性已经得到越来越广泛的应用。
图1为现有的一种原子层沉积设备的结构简图。图2为原子层沉积过程的流程图。请一并参阅图1和图2，原子层沉积设备包括并行设置的装卸腔室11和反应腔室10，以及设置在二者之间且用于连通或隔离二者的门阀12。其中，在反应腔室10的顶部设置有气体分配板101，用以对经过的工艺气体向反应腔室10内的各个区域流动的流量进行分配，以使分布在反应腔室10内的工艺气体趋于均匀；在反应腔室10内，且与气体分配板101相对应的位置处设置有下电极板14，用以承载基片S，并将基片S加热至工艺所需的温度；在装卸腔室11内设置有机械手13，机械手13用于将基片S自装卸腔室11内经由门阀12传送至反应腔室10内的下电极板14上，以及自上电极板14经由门阀12传送至装卸腔室11内。
采用上述原子层沉积设备进行工艺具体包括以下步骤：如图2所示，步骤1，开启门阀12，机械手13将待加工的基片S经由门阀12传送至反应腔室10内的下电极板14上，空载的机械手13返回装卸腔室11内，关闭门阀12；下电极板14将待加工的基片S加热至工艺所需的温度。步骤2，向反应腔室10内输送定量的由反应源A提供的气体，该气体会与待加工的基片S表面的基团发生吸附直至达到饱和，从而在基片S表面上形成了只有一个原子层厚度的源A薄膜。步骤3，向反应腔室10内输送不与来自反应源A和反应源B的气体反应的吹扫气体，例如氩气，用以清除残留在反应腔室10内的来自反应源A的气体。步骤4，向反应腔室10内输送定量的由反应源B提供的气体，该气体会与沉积在基片S表面上的源A薄膜发生反应，从而在基片S表面上形成一个原子层厚度的薄膜，该薄膜即为工艺所需的薄膜。步骤5，再次向反应腔室10内输送上述吹扫气体，用以清除残留在反应腔室10内的来自反应源B的气体。步骤6，重复上述步骤2-5，以在基片S上重复沉积薄膜，直至该薄膜达到工艺所需的厚度（多个原子层厚度的叠加）。步骤7，打开门阀12，机械手13经由门阀12进入反应腔室10内，并将已加工的基片S移出反应腔室10；然后冷却已加工的基片S，并将其放置在基片盒内。
上述原子层沉积设备在实际应用中不可避免的存在以下问题：
其一，由于来自两种反应源的气体之间的反应具有自抑制性（即，二者无法持续发生反应），导致原子层的沉积速率很慢，从而完成上述所有工艺步骤需要耗费大量的时间，例如，沉积厚度为20nm的氧化铝薄膜至少需要300～400s的时间，这使得原子层沉积设备的产能很低，很难满足规模化生产的需要。
其二，在进行步骤4之前，即，在向反应腔室10内通入下一种气体之前，均需要进行借助吹扫气体清除残留在反应腔室10内的气体的步骤，这使得完成整个工艺的一大部分时间均消耗在该步骤上，从而进一步导致原子层沉积设备的产能降低。
发明内容
本发明旨在解决现有技术中存在的技术问题，提供了一种原子层沉积设备，其可以实现不同工序在同一时间加工多个基片，从而可以提高工艺效率，进而可以提高产能。
本发明提供了一种原子层沉积设备，包括反应腔室和气源，所述反应腔室包括气体分配板、基盘和旋转驱动机构，其中：所述气体分配板设置在所述反应腔室内的顶部，用于对来自所述气源的气体向所述反应腔室内的各个区域流动的流量进行分配；所述基盘设置在所述反应腔室内，用以承载基片，且所述基盘的上表面与所述气体分配板的下表面相互叠置，且在二者之间形成有沿反应腔室的周向间隔且均匀分布的多个子空间，所述多个子空间按工序的先后顺序排列，每个所述子空间用于对基片完成单次工艺中的其中一个工序；所述旋转驱动机构，用于驱动所述基盘相对于所述气体分配板旋转，以使所述基盘带动置于其上的所有基片按工序的先后顺序依次置于各个所述子空间内进行工艺。
其中，所述基盘的上表面和/或所述气体分配板的下表面设置有沿所述基盘的轴向环绕的环形凹部，用以使所述基盘的上表面与所述气体分配板的下表面之间形成环形空间；所述气体分配板的下表面上，且位于/对应所述环形空间内的位置均匀分布有多个工艺进气口和隔离进气口，其中，多个所述隔离进气口沿反应腔室的周向间隔且均匀设置，用以将多个所述工艺进气口分为沿反应腔室的周向间隔且均匀设置的多组，每组工艺进气口所在的部分环形空间形成工艺区域；且所述气体分配板的下表面上，且环绕/对应环绕所述环形空间的位置，设置有多个辅助进气口，所述辅助进气口和所述隔离进气口所在的部分环形空间形成隔离区域；并且所述气源包括隔离气源和工艺气源，位于隔离区域内的所述辅助进气口和所述隔离进气口均与所述隔离气源连通，所述隔离气源经由与之连通的所述辅助进气口和隔离进气口向所述环形空间提供不与所述工艺气体反应的隔离气体，该隔离气体形成环绕在各个工艺区域周围的气墙，所述气墙将所述环形空间划分形成多个所述子空间；位于各个工艺区域内的工艺进气口与所述工艺气源连通，所述工艺气源经由与之连通的工艺进气口向各个所述子空间内提供相应工序所需的气体。
其中，在所述基盘的上表面和/或所述气体分配板的下表面形成有沿所述基盘的轴向环绕的环形凹部，用以使所述基盘的上表面与所述气体分配板的下表面之间形成一环形空间；在所述气体分配板的下表面上，位于/对应所述环形空间内均匀分布有多个工艺进气口和隔离进气口，其中，所述隔离进气口沿反应腔室的周向间隔且均匀设置，用以将多个所述工艺进气口分为沿反应腔室的周向间隔且均匀设置的多组；每组工艺进气口所在的部分环形空间形成工艺区域；且所述隔离进气口所在的部分环形空间形成隔离区域；并且所述气源包括隔离气源和工艺气源，位于隔离区域内的隔离进气口与所述隔离气源连通；所述隔离气源经由与之连通的隔离进气口向所述环形空间内提供不与所述工艺气体反应的隔离气体，该隔离气体在所述环形空间内形成位于相邻的两个所述工艺区域之间的气墙，所述气墙将所述环形空间划分形成封闭的多个所述子空间；位于各个工艺区域内的工艺进气口与所述工艺气源连通，所述工艺气源经由与之连通的工艺进气口向各个所述子空间内提供相应工序所需的工艺气体。
其中，所述基盘的上表面和所述气体分配板的下表面可相对旋转地配合，且在二者之间设置有动密封件，用以密封所述环形空间。
其中，所述气体分配板的上表面与所述反应腔室的顶壁的下表面相互叠置，并且在所述气体分配板的上表面上，且与各个所述工艺区域相对应的位置处设置有第一凹部，所述第一凹部和与之相对的所述反应腔室的顶壁的下表面形成第一匀流空间，并且，位于每个所述工艺区域内的工艺进气口和与该工艺区域相对应的所述第一匀流空间连通；在所述气体分配板的上表面上，且与所述隔离区域相对应的位置处设置有第二凹部，所述第二凹部和与之相对的所述反应腔室的顶壁的下表面形成第二匀流空间，并且，位于所述隔离区域内的隔离进气口和与该隔离区域相对应的所述第二匀流空间连通。
其中，在所述基盘的上表面上，且位于未承载所述基片的区域设置有多个出气口，并且，在所有所述出气口中，位于所述隔离区域内的所述隔离出气口用于将该隔离区域内的隔离气体排入所述反应腔室内；位于所述工艺区域的所述工艺出气口用于将所述子空间内的工艺气体排入所述反应腔室内；并且在所述反应腔室的腔室壁上设置有排气通道，用以将所述反应腔室内的气体排出。
其中，所述反应腔室还包括升降驱动机构，所述升降驱动机构用于驱动所述基盘上升或者下降，以使所述基盘的上表面和所述气体分配板的下表面相互叠置或者分离；并且所述旋转驱动机构在所述基盘和所述气体分配板相互分离时，驱动所述基盘相对于所述气体分配板旋转，并带动置于所述基盘上的所有所述基片沿所述基盘的周向旋转，以使每个所述基片自当前工序所在的子空间移动至下一工序所在的子空间。
其中，在所述基盘的上表面上和/或所述气体分配板的下表面上设置有密封件，以在所述基盘的上表面和所述气体分配板的下表面相互叠置时对各个所述子腔室进行密封。
其中，所述原子层沉积设备还包括装卸腔室和门阀，其中
所述门阀设置在所述装卸腔室与所述反应腔室之间，用于连通或隔离所述装卸腔室和反应腔室；在所述装卸腔室内设置有机械手，所述机械手用于将未加工的所述基片经由所述门阀传输至所述基盘上的与相应工艺区域相对应的位置处，以及，将完成所有工序的所述基片自所述基盘上经由所述门阀传输至所述装卸腔室。
其中，所述隔离气体包括氮气或氩气。
本发明具有下述有益效果：
本发明提供的原子层沉积设备，其通过在反应腔室内顶部设置的气体分配板的下表面与设置在反应腔室内的基盘的上表面相互叠置，且在二者之间形成有沿反应腔室的周向间隔且均匀分布的多个子空间，多个子空间按工序的先后顺序排列，每个子空间用于对基片完成单次工艺中的其中一个工序，可以对置于各个子空间内的基片同时进行不同的工序；并且，通过借助旋转驱动机构驱动基盘相对于气体分配板旋转，以使每个基片按工序的先后顺序被依次置于各个子空间内进行工艺，即，将完成当前工序的基片置于下一工序的子空间内，并通过重复上述“加工基片”和“旋转基片”两个过程，直至所有基片完成单次工艺所要进行的所有工序，可以实现不同工序在同一时间加工多个基片，从而可以提高工艺效率，进而可以提高产能。
附图说明
图1为现有的一种原子层沉积设备的结构简图；
图2为原子层沉积过程的流程图；
图3A为本发明第一实施例提供的原子层沉积设备的剖视图；
图3B为图3A中沿A-A’线的剖视图；
图3C为图3A中气体分配板的俯视图；
图3D为图3A中基盘的俯视图；
图3E为图3A中沿B-B’线的剖视图；
图4A为图3A中另一种基盘的俯视图；
图4B为图4A中沿A-A’线的剖视图；
图5为本发明第一实施例提供的原子层沉积设备的俯视图；
图6A为本发明第一实施例提供的另一种原子层沉积设备的剖视图；
图6B为图6A中沿A-A’线的剖视图；
图6C为图6A中气体分配板的俯视图；
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明提供的原子层沉积设备进行详细描述。
图3A为本发明第一实施例提供的原子层沉积设备的剖视图。图3B为图3A中沿A-A’线的剖视图。图3C为图3A中气体分配板的俯视图。图3D为图3A中基盘的俯视图。图3E为图3A中沿B-B’线的剖视图。请一并参阅图3A、图3B、图3C、图3D和图3E，原子层沉积设备包括反应腔室10、装卸腔室11、门阀12和气源。其中，反应腔室包括气体分配板101、基盘102和旋转驱动机构20，气体分配板101设置在反应腔室10内的顶部，用于对来自气源的气体向反应腔室10内的各个区域流动的流量进行分配；基盘102设置在反应腔室10内，用以承载基片S；基盘102的上表面与气体分配板101的下表面相互叠置，且在二者之间形成沿反应腔室10的周向间隔且均匀分布的多个子空间，并且，多个子空间按工序的先后顺序排列，每个子空间用于对基片S完成整个工艺中的其中一个工序，即，各个子空间可以同时对相应的基片S进行不同的工序。
在本实施例中，在基盘102的上表面上设置有沿基盘102轴向环绕的环形凹部103，用以使基盘102的上表面与气体分配板101的下表面形成环形空间1030；并且，在气体分配板101的下表面上，且位于/对应环形空间1030内的位置均匀分布有多个工艺进气口1041和隔离进气口1042，其中，多个隔离进气口1042沿反应腔室10的周向间隔且均匀设置，用以将多个工艺进气口1041分为沿反应腔室10的周向间隔且均匀设置的多组，每组工艺进气口1041所在的部分环形空间1030形成工艺区域1031；且隔离进气口1042所在的部分环形空间1030形成隔离区域1032，并且，气源包括工艺气源和隔离气源，位于隔离区域1032内的隔离进气口1042与隔离气源连通，隔离气源经由与之连通的隔离进气口1042向环形空间1030提供不与工艺气体反应的隔离气体，该隔离气体形成环绕在各个工艺区域1031周围的气墙，气墙将环形空间1030划分形成多个子空间，隔离气体包括氮气或氩气；换言之，对应于每个工艺区域1031，相邻的两个气墙、位于这两个气墙之间的环形凹部103的内外侧壁、气体分配板101的下表面及环形凹部103的底面形成相对封闭的子空间；位于各个工艺区域内的工艺进气口1041与工艺气源连通，工艺气源经由与之连通的工艺进气口1041向各个子空间内提供相应工序所需的气体，以实现各个子空间可以同时对相应的基片S进行不同的工序。
在本实施例中，如图3D所示，在每个工艺区域所在位置处的子空间内，在基盘102上承载有三个基片S，在利用各个子空间进行相应的工序时，每个子空间能够同时加工三个基片S，从而可以进一步提高原子层沉积设备的产能，优选地，为了便于装、卸载基片S，三个基片S沿基盘102的周向间隔且均匀排列。当然，在实际应用中，还可以在每个子空间内放置一个、两个或四个以上的基片S，其数量可以根据反应腔室10的容积自由调整。
旋转驱动机构20用于驱动基盘102相对于气体分配板101旋转，以使基盘102带动置于其上的基片S按工序的先后顺序依次置于各个子空间内进行工艺，即，每个基片S自当前工序所在的子空间移动至下一工序所在的子空间。
通过重复上述两个过程，即：各个子空间同时对相应的基片S加工单次工艺中的其中一个工序的“加工基片过程”以及旋转驱动机构20驱动基片S自当前工序所在的子空间移动至下一工序所在的子空间的“旋转基片过程”，直至每个基片均被逐一置于四个子空间内，并完成单次工艺所要进行的所有工序，可以实现不同工序在同一时间加工多个基片S，从而可以提高工艺效率，进而可以提高产能。
容易理解，在基盘102的上表面和气体分配板101的下表面可相对旋转地配合，优选地，在二者之间设置有动密封件，用以在工艺过程中以及基盘102相对气体分配板101旋转时密封环形空间1030，防止环形空间1030内的气体泄漏。
在本实施例中，气体分配板101的上表面与反应腔室10的顶壁的下表面相互叠置，并且在气体分配板101的上表面上，且与各个工艺区域相对应的位置处设置有第一凹部106，第一凹部106和与之相对的反应腔室10的顶壁的下表面形成第一匀流空间，并且，位于每个工艺区域1031内的工艺进气口1041和与该工艺区域1031相对应的第一匀流空间连通；而且，在气体分配板101的上表面上，且与隔离区域1032相对应的位置处设置有第二凹部107，第二凹部107和与之相对的反应腔室10的顶壁的下表面形成第二匀流空间，并且，位于隔离区域1032内的隔离进气口1042和与该隔离区域1032相对应的第二匀流空间连通。
在本实施例中，在基盘102的上表面上，且位于未承载基片S的区域设置有多个出气口113，并且，在所有出气口113中，位于隔离区域1032内的隔离出气口1132用于将该隔离区域内的隔离气体通入反应腔室10内；位于工艺区域1031内的工艺出气口1131用于将子空间内的工艺气体通入反应腔室10内。而且，在反应腔室10的腔室底壁上设置有排气通道114，用以将反应腔室10内的气体排出。
作为一种可实施方式，反应腔室10的腔室底壁上设置的排气通道114与一真空装置连接，用于在工艺过程中持续抽出排放到反应腔室10内的气体。
在本实施例中，在反应腔室10的顶壁上设置有贯穿其厚度的多个通孔111，并且在所有通孔111中，位置与工艺区域1031相对应的通孔111的两端分别与工艺气源和第一匀流空间连通；位置与隔离区域1032相对应的通孔111的两端分别与隔离气源和第二匀流空间连通。
在进行工艺的过程中，由隔离气源提供的隔离气体经由位置与各个隔离区域1032相对应的通孔1112流入相应的第二匀流空间内，并经由位于各个隔离区域1032内的隔离进气口1042流入环形空间1030内，在此过程中，隔离气体在环形空间1030内，且在位于相邻的两个工艺区域之间形成气墙；然后，隔离气体经由位于各个隔离区域1032内的出气口1132排入反应腔室10内；最后经由排气通道114排出反应腔室10。
由工艺气源提供的工艺气体经由位置与各个工艺区域1031相对应的通孔1111流入相应的第一匀流空间内，并经由位于各个工艺区域1031内的进气口1041流入环形空间1030内；流入环形空间1030内的工艺气体位于相邻的两个由隔离气体形成的气墙之间，即，位于各个子空间内，并与置于该子空间内的基盘102上的基片S发生反应；然后，反应后的废气以及未反应的工艺气体经由位于各个工艺区域1031内的出气口1131排入反应腔室10内；最后经由排气通道114排出反应腔室10。
在实际应用中，可以在基盘102的上表面上，且在环形凹部103的外侧和内侧分别设置有与环形凹部103互为同心圆环的两个环形凹部（1101，1102），如图4A和图4B所示，这两个环形凹部（1101，1102）和与之相对的气体分配板101的下表面形成分别位于环形凹部103的外侧和内侧的两个环形隔离空间；而且，在气体分配板101的下表面上，且位于/对应该环形隔离空间内设置有进气口，并且进气口与隔离气源连通，以及在两个环形凹部（1101,1102）的底面上设置有贯穿其厚度的多个出气口1132，出气口1132用以将两个环形隔离空间与反应腔室10相连通。
而且，对应地分别在气体分配板101的上表面设置第三凹部，该第三凹部和与之相对的反应腔室10的顶壁的下表面形成第三匀流空间，并且，在反应腔室10的顶壁上，且位于第三匀流空间内设置有通孔111，该通孔111的两端分别与隔离气源和第三匀流空间连通。在进行工艺的过程中，由隔离气源提供的隔离气体经由上述通孔111流入相应的第三匀流空间内，并经由位于环形隔离空间内的进气口流入环形隔离空间内；然后，隔离气体经由位于环形隔离空间内的出气口1132排入反应腔室10内；最后经由排气通道114排出反应腔室10。在此过程中，环形隔离空间内的隔离气体会在基盘102的上表面与气体分配板101的下表面之间的密封失效时，起到二次密封的作用，以防止工艺气体的泄漏，从而可以提高工艺的稳定性。
门阀12设置在装卸腔室11与反应腔室10之间，用以使装卸腔室11与反应腔室10相互连通或隔离；并且在装卸腔室11内设置有机械手13，机械手13用于将未加工的基片S经由门阀12传输至相应的子空间内，以及，将完成所有工序的基片S自相应的子空间内经由门阀12传输至装卸腔室11。在本实施例中，机械手13采用双层机械手，其中，上层机械手可用于将完成所有工序的基片S自相应的子空间内卸载至装卸腔室11内，下层机械手可用于将未加工的基片S自装卸腔室11装载至相应的子空间内，这可以在一定程度上缩短装载和卸载基片S的时间，从而可以进一步提高工艺效率。当然，在实际应用中，还可以仅设置单层机械手，其同样可以完成对基片S的装载和卸载。
此外，为了实现将基盘102可相对于气体分配板101旋转地设置在反应腔室10内，反应腔室10还包括支撑部件，用以将基盘102与旋转驱动机构的驱动轴连接，并对基盘102进行支撑。
下面结合图5针对基片S完成单次工艺的所有工序的过程进行详细描述。具体地，在本实施例中，原子层沉积设备的单次工艺流程包括工艺过程、旋转过程和装卸过程。其中，工艺过程按工序的先后顺序依次包括以下四个工序，即：
工序A，向子空间PM-A通入反应源A气体，以在基片S表面沉积反应源A薄膜；
工序B，向子空间PM-B通入吹扫气体，以吹扫基片S表面；
工序C，向子空间PM-C通入反应源B气体，反应源B气体与反应源A薄膜发生反应，以在基片S表面上形成一个原子层厚度的薄膜；
工序D，向子空间PM-D通入吹扫气体，以吹扫基片S表面。
并且，在进行上述四个工序的整个过程中，同时向环形空间1030通入隔离气体，以形成可将该环形空间1030划分为四个子空间（PM-A，PM-B，PM-C，PM-D）的气墙。
在上述四个子空间（PM-A，PM-B，PM-C，PM-D）同时对应完成一次上述四个工序（A，B，C，D）之后，并在同时进行下一次四个工序之前，进行旋转过程。该旋转过程的具体流程为：借助旋转驱动机构20驱动基盘102顺时针旋转90°，以使基盘102带动置于其上的基片S顺时针旋转90°，此时基片S由当前工序的工艺区域旋转至下一工序的工艺区域，例如，若四个基片S中的其中一个原先位于子空间PM-A所对应的工艺区域处，则其在顺时针旋转90°之后，位于子空间PM-B所对应的工艺区域处。
装卸过程包括装载工序和卸载工序，即：
卸载工序，在完成上述工艺旋转工序之后，若位于与卸载机械手131相对应的工艺区域处的子空间（如图5中子空间PM-D）内的基片S已完成单次工艺中的所有的工序，则借助卸载机械手131将该子空间内的所有基片S逐一经由门阀11传送至卸载腔室11内。容易理解，在逐一卸载基片S的过程中，需要旋转驱动机构20与机械手131配合使用，即，在卸载机械手131将子空间内、位置与卸载机械手131相对应的基片S卸载之后，旋转驱动机构20驱动基盘102旋转，以使该子空间内的下一基片S的位置与卸载机械手131的位置相对应；循环该过程，直至完成该子空间内的所有基片S的卸载。
装载工序，在完成上述卸载工序之后，位于与装载机械手132相对应的工艺区域处的子空间（如图5中子空间PM-A）处于空置状态。借助装载机械手132逐一将未加工的基片S自卸载腔室11传送至该子空间内，由于其传送方式与上述卸载工序中旋转驱动机构20与卸载机械手131配合使用的方式相类似，在此不再重复描述。
需要说明的是，在本实施例中，在基盘102的上表面上形成环形凹部103，但是，本发明并不局限于此，在实际应用中，也可以在气体分配板101的下表面形成环形凹部103，或者，还可以对应地分别在基盘102的上表面和气体分配板101的下表面上形成两个环形凹部103，且二者在基盘的上表面和气体分配板的下表面相互叠置时形成环形空间1030。此外，可以根据具体情况设定基盘102和/或气体分配板101上的环形凹部的深度，以调整环形空间1030的容积。
还需要说明的是，在实际应用中，反应腔室还可以包括升降驱动机构，用以驱动基盘102作升降运动，以使基盘102的上表面与气体分配板101的下表面相互接触或分离。在这种情况下，可以在上述旋转过程中增加上升工序和下降工序，即：
下降工序，在各个子空间同时完成单次工艺过程中的相应工序之后，并在同时进行下一工序之前，借助升降驱动机构驱动基盘102下降，以使基盘102的上表面和气体分配板101的下表面相互分离。
旋转工序，借助旋转驱动机构20驱动基盘102顺时针或逆时针旋转相应角度，以使基盘102带动置于其上的基片S旋转，此时基片S由当前工序的工艺区域旋转至下一工序的工艺区域。
上升工序，借助升降驱动机构驱动基盘102上升，以使基盘102的上表面和气体分配板101的下表面相互接触，以使二者之间形成封闭的环形空间1030。
容易理解，在上述情况下，由于基盘102的上表面和气体分配板101的下表面之间不会产生相对旋转，因而二者无需可相对旋转地配合。此外，优选地，在基盘102的上表面上和/或气体分配板101的下表面上设置有密封件，以在基盘102的上表面和气体分配板101的下表面相互叠置时对环形空间1030进行密封，从而可以防止工艺气体或者隔离气体的泄漏。
进一步需要说明的是，在本实施例中，子空间的数量为四个，但是本发明并不局限于此，在实际应用中，子空间的数量还可以为上述工艺过程中工序A和工序C的数量之和的偶数倍。
另外需要说明的是，在实际应用中，如图6A、6B和6C所示，可以在气体分配板101的下表面上，且环绕/对应环绕环形空间1030的位置，设置有多个辅助进气口1043，辅助进气口1043和隔离进气口1042所在的部分环形空间1030形成隔离区域1032，位于隔离区域1032内的辅助进气口1043和隔离进气口1042均与隔离气源连通，在这种情况下，由隔离气源提供的隔离气体经由位于各个隔离区域1032的隔离进气口1042和，辅助进气口1043在环形空间1030内形成环绕在各个工艺区域周围的气墙，该气墙将环形空间1030划分形成封闭的各个子空间，换言之，每个子空间由环绕在该子空间所在的工艺区域四周的气墙、位于该气墙内的气体分配板101的下表面及环形凹部103的底面形成。容易理解，由于隔离区域1032与工艺区域1031的划分方式发生改变，因而应相应地改变形成第二匀流空间的第二凹部107、位于隔离区域1032内的隔离出气口1042以及位于隔离区域1032相对应的通孔1112的设置方式，以使隔离气体能够经由通孔1112、第二匀流空间和进气口1042流入环形空间1030内，并在每个工艺区域的四周形成气墙；然后，隔离气体经由隔离出气口1132流入反应腔室10内。
容易理解，由于隔离气体在各个工艺区域的四周形成气墙，这使得在基盘102的上表面和气体分配板101之间的密封失效时，可以借助该气墙对环形空间1030起到二次密封的作用，以防止工艺气体的泄漏，从而可以提高工艺的稳定性。而且，在这种情况下，可以省去在基盘102的上表面上，且在环形凹部103的外侧和内侧分别设置的互为同心圆环的两个环形凹部（1101,1102），从而不仅可以减小原子层沉积设备的体积，而且可以简化原子层沉积设备的结构。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的原理和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。
Claims (10)
1.一种原子层沉积设备，包括反应腔室和气源，其特征在于，所述反应腔室包括气体分配板、基盘和旋转驱动机构，其中：
所述气体分配板设置在所述反应腔室内的顶部，用于对来自所述气源的气体向所述反应腔室内的各个区域流动的流量进行分配；
所述基盘设置在所述反应腔室内，用以承载基片，且所述基盘的上表面与所述气体分配板的下表面相互叠置，且在二者之间形成有沿反应腔室的周向间隔且均匀分布的多个子空间，所述多个子空间按工序的先后顺序排列，每个所述子空间用于对基片完成单次工艺中的其中一个工序；
所述旋转驱动机构，用于驱动所述基盘相对于所述气体分配板旋转，以使所述基盘带动置于其上的所有基片按工序的先后顺序依次置于各个所述子空间内进行工艺。
2.根据权利要求1所述的原子层沉积设备，其特征在于，所述基盘的上表面和/或所述气体分配板的下表面设置有沿所述基盘的轴向环绕的环形凹部，用以使所述基盘的上表面与所述气体分配板的下表面之间形成环形空间；
所述气体分配板的下表面上，且位于/对应所述环形空间内的位置均匀分布有多个工艺进气口和隔离进气口，其中，多个所述隔离进气口沿反应腔室的周向间隔且均匀设置，用以将多个所述工艺进气口分为沿反应腔室的周向间隔且均匀设置的多组，每组工艺进气口所在的部分环形空间形成工艺区域；且所述气体分配板的下表面上，且环绕/对应环绕所述环形空间的位置，设置有多个辅助进气口，所述辅助进气口和所述隔离进气口所在的部分环形空间形成隔离区域；并且
所述气源包括隔离气源和工艺气源，位于隔离区域内的所述辅助进气口和所述隔离进气口均与所述隔离气源连通，所述隔离气源经由与之连通的所述辅助进气口和隔离进气口向所述环形空间提供不与所述工艺气体反应的隔离气体，该隔离气体形成环绕在各个工艺区域周围的气墙，所述气墙将所述环形空间划分形成多个所述子空间；
位于各个工艺区域内的工艺进气口与所述工艺气源连通，所述工艺气源经由与之连通的工艺进气口向各个所述子空间内提供相应工序所需的气体。
3.根据权利要求1所述的原子层沉积设备，其特征在于，在所述基盘的上表面和/或所述气体分配板的下表面形成有沿所述基盘的轴向环绕的环形凹部，用以使所述基盘的上表面与所述气体分配板的下表面之间形成一环形空间；
在所述气体分配板的下表面上，位于/对应所述环形空间内均匀分布有多个工艺进气口和隔离进气口，其中，所述隔离进气口沿反应腔室的周向间隔且均匀设置，用以将多个所述工艺进气口分为沿反应腔室的周向间隔且均匀设置的多组；每组工艺进气口所在的部分环形空间形成工艺区域；且所述隔离进气口所在的部分环形空间形成隔离区域；并且
所述气源包括隔离气源和工艺气源，位于隔离区域内的隔离进气口与所述隔离气源连通；所述隔离气源经由与之连通的隔离进气口向所述环形空间内提供不与所述工艺气体反应的隔离气体，该隔离气体在所述环形空间内形成位于相邻的两个所述工艺区域之间的气墙，所述气墙将所述环形空间划分形成封闭的多个所述子空间；
位于各个工艺区域内的工艺进气口与所述工艺气源连通，所述工艺气源经由与之连通的工艺进气口向各个所述子空间内提供相应工序所需的工艺气体。
4.根据权利要求2或3所述的原子层沉积设备，其特征在于，所述基盘的上表面和所述气体分配板的下表面可相对旋转地配合，且在二者之间设置有动密封件，用以密封所述环形空间。
5.根据权利要求2或3所述的原子层沉积设备，其特征在于，所述气体分配板的上表面与所述反应腔室的顶壁的下表面相互叠置，并且在所述气体分配板的上表面上，且与各个所述工艺区域相对应的位置处设置有第一凹部，所述第一凹部和与之相对的所述反应腔室的顶壁的下表面形成第一匀流空间，并且，位于每个所述工艺区域内的工艺进气口和与该工艺区域相对应的所述第一匀流空间连通；
在所述气体分配板的上表面上，且与所述隔离区域相对应的位置处设置有第二凹部，所述第二凹部和与之相对的所述反应腔室的顶壁的下表面形成第二匀流空间，并且，位于所述隔离区域内的隔离进气口和与该隔离区域相对应的所述第二匀流空间连通。
6.根据权利要求2或3所述的原子层沉积设备，其特征在于，在所述基盘的上表面上，且位于未承载所述基片的区域设置有多个出气口，并且，在所有所述出气口中，位于所述隔离区域内的所述隔离出气口用于将该隔离区域内的隔离气体排入所述反应腔室内；位于所述工艺区域的所述工艺出气口用于将所述子空间内的工艺气体排入所述反应腔室内；并且
在所述反应腔室的腔室壁上设置有排气通道，用以将所述反应腔室内的气体排出。
7.根据权利要求1所述的原子层沉积设备，其特征在于，所述反应腔室还包括升降驱动机构，所述升降驱动机构用于驱动所述基盘上升或者下降，以使所述基盘的上表面和所述气体分配板的下表面相互叠置或者分离；并且
所述旋转驱动机构在所述基盘和所述气体分配板相互分离时，驱动所述基盘相对于所述气体分配板旋转，并带动置于所述基盘上的所有所述基片沿所述基盘的周向旋转，以使每个所述基片自当前工序所在的子空间移动至下一工序所在的子空间。
8.根据权利要求7所述的原子层沉积设备，其特征在于，在所述基盘的上表面上和/或所述气体分配板的下表面上设置有密封件，以在所述基盘的上表面和所述气体分配板的下表面相互叠置时对各个所述子腔室进行密封。
9.根据权利要求1所述的原子层沉积设备，其特征在于，所述原子层沉积设备还包括装卸腔室和门阀，其中
所述门阀设置在所述装卸腔室与所述反应腔室之间，用于连通或隔离所述装卸腔室和反应腔室；
在所述装卸腔室内设置有机械手，所述机械手用于将未加工的所述基片经由所述门阀传输至所述基盘上的与相应工艺区域相对应的位置处，以及，将完成所有工序的所述基片自所述基盘上经由所述门阀传输至所述装卸腔室。
10.根据权利要求2或3所述的原子层沉积设备，所述隔离气体包括氮气或氩气。
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