CN112593208A - 半导体工艺设备 - Google Patents

半导体工艺设备 Download PDF

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CN112593208A
CN112593208A CN202011340051.0A CN202011340051A CN112593208A CN 112593208 A CN112593208 A CN 112593208A CN 202011340051 A CN202011340051 A CN 202011340051A CN 112593208 A CN112593208 A CN 112593208A
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exhaust
base
gas
process chamber
flow guide
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CN112593208B (zh
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任晓艳
王勇飞
史小平
郑波
兰云峰
秦海丰
张文强
王昊
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202011340051.0A priority Critical patent/CN112593208B/zh
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Priority to TW110142779A priority patent/TWI806244B/zh
Priority to JP2023531592A priority patent/JP7370499B1/ja
Priority to EP21896855.0A priority patent/EP4253596A4/en
Priority to US18/254,049 priority patent/US20230411188A1/en
Priority to KR1020237016749A priority patent/KR102594599B1/ko
Priority to PCT/CN2021/131149 priority patent/WO2022111354A1/zh
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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Abstract

本申请实施例提供了一种半导体工艺设备。该半导体工艺设备包括：工艺腔室内包括工艺区及传片区；进气装置设置于工艺腔室的顶部，用于向工艺区内通入工艺气体；承载装置包括有基座及导流结构，基座可升降的设置于传片区内，用于承载待加工件；导流结构设置于基座内，与一供气源连接，用于在基座位于工艺位置时，沿基座的周向吹出气体，在基座外周与工艺腔室内壁之间形成气墙，以隔绝工艺气体进入传片区；工艺腔室传片区的内壁中设有排气结构，当基座位于工艺位置时，导流结构与排气结构相对，排气结构用于排出导流结构吹出的气体。本申请实施例实现了工艺区与传片区之间完全隔离，从而大幅缩短工艺腔室吹扫时间以提高半导体工艺设备的产能。

Description

半导体工艺设备
技术领域
本申请涉及半导体加工技术领域，具体而言，本申请涉及一种半导体工艺设备。
背景技术
目前，随着集成电路技术向着微型化、集成化、高效能的方向发展，应用原子层沉积(Atomic Layer Deposition，ALD)技术的半导体工艺设备由于其薄膜厚度高度可控、均匀性优良、台阶覆盖率高等多种优点而被广泛关注，并在某些领域替代传统的化学气相沉积(Chemical Vapor Deposition,CVD)技术，ALD技术具有自身逐层饱和吸附的特点，可以将物质以单原子膜形式逐层的镀在基底表面，形成超薄且厚度高度可控的膜层。对于ALD反应而言，如何能够快速的将一种反应前驱体从工艺腔室中吹扫干净，进而通入另一种反应前驱体，避免两者相遇在气相中发生CVD反应，是ALD设备在量产中不得不考虑的一个重要问题。两种反应前驱体的相遇，一是会导致薄膜在原子层级的生长速率不可控，二是CVD反应在气相中发生后会形成颗粒。在传统的原子层沉积技术中，会通过延长吹扫时间来赶走反应前驱体，但这样做同时又降低了半导体工艺设备的产能。
为了解决以上问题，现有的技术方案中，一是通过增加隔离板将工艺腔室分成工艺区和传输区，通过在传输区通入惰性气体，避免工艺气体进入传输区造成颗粒，由于隔板与基座之间具有间隙，因此该方案并不能完全避免工艺气体扩散至传输区，从而导致吹扫时间并没有得到明显的降低。另一种改进方案具体的实现方式是在基座的底部增加一个凸台结构，且与隔离板之间通过波纹管、软材料、密封圈等形成封闭性接触，实现工艺区和传输区的完全物理隔离，从而减少气体吹扫的时间，但该方案所使用的物理接触方式，由于要满足运动及频繁接触等要求，密封部位易藏有颗粒及反应气体，从而对工艺腔室造成颗粒污染，并且可能伴有其他污染及运动部件的寿命问题；此外由于密封圈仅能在200℃左右及以下使用，不能满足多种工艺需求。
发明内容
本申请针对现有方式的缺点，提出一种半导体工艺设备，用以解决现有技术存在工艺腔室由于吹扫时间较长导致产能较低的技术问题，以及密封部件寿命较低且适用性较弱的技术问题。
第一个方面，本申请实施例提供了一种半导体工艺设备，包括：工艺腔室、进气装置及承载装置；所述工艺腔室内包括自上至下分布的工艺区及传片区；所述进气装置设置于所述工艺腔室的顶部，用于向所述工艺区内通入工艺气体；所述承载装置包括有基座及导流结构，所述基座可升降的设置于所述传片区内，用于承载待加工件；所述导流结构设置于所述基座内，与一供气源连接，用于在所述基座位于工艺位置时，沿所述基座的周向吹出气体，在所述基座外周与所述工艺腔室内壁之间形成气墙，以隔绝所述工艺气体进入所述传片区；所述工艺腔室传片区的内壁中设有排气结构，当所述基座位于所述工艺位置时，所述导流结构与所述排气结构相对，所述排气结构用于排出所述导流结构吹出的气体。
于本申请的一实施例中，所述基座包括基座本体和支撑轴，所述基座本体用于承载所述待加工件，所述支撑轴一端与所述基座本体连接，另一端穿过所述工艺腔室的底壁与一驱动源连接；所述导流结构包括导流缝及多个气流道，所述导流缝开设于所述基座本体的外周壁上，并且沿所述基座本体的周向延伸设置；所述气流道开设于所述基座本体和所述支撑轴中，其两端分别与所述导流缝及所述供气源连接，用于将所述气体导引至所述导流缝。
于本申请的一实施例中，所述导流结构还包括有环形的增压腔，所述增压腔形成于所述基座本体内且环绕所述基座本体的轴心设置，多个所述气流道均通过所述增压腔与所述导流缝连通。
于本申请的一实施例中，多个所述气流道位于所述基座本体中的部分均沿所述基座本体的径向延伸设置，并且沿所述基座本体的周向均匀排布；多个所述气流道位于所述支撑轴中的部分均沿所述支撑轴的轴向延伸设置，且围绕所述支撑轴的轴线均匀排布。
于本申请的一实施例中，所述排气结构包括排气腔和第一排气管路，所述排气腔呈环形，形成于所述工艺腔室传片区的侧壁中，沿所述侧壁的周向延伸设置，所述侧壁上开设有沿所述侧壁的周向延伸设置且连通所述排气腔的排气口，在所述基座位于工艺位置时，所述排气口与所述导流缝相对，所述排气口的高度大于所述导流缝的高度，所述第一排气管路一端与所述排气腔连通，另一端与第一抽气装置连通。
于本申请的一实施例中，所述半导体工艺设备还包括第二排气管路，所述第二排气管路的两端分别与所述传片区及所述第一抽气装置连接。
于本申请的一实施例中，所述工艺腔室工艺区的内壁上设有工艺排气结构，所述工艺排气结构用于排出所述工艺气体。
于本申请的一实施例中，所述工艺排气结构包括排气槽、排气栅及第三排气管路，所述排气槽呈环形，开设在所述工艺腔室工艺区的侧壁上，沿所述侧壁的周向延伸设置，所述排气栅呈环形，设置在所述排气槽的开口处，所述第三排气管路一端与所述排气槽连通，另一端与第二抽气装置连通。
于本申请的一实施例中，所述第一排气管路、第二排气管路上均设置有阀门，所述阀门用于导通或关闭所述第一排气管路、第二排气管路；所述第三排气管路上设置有所述阀门，所述阀门用于导通或关闭所述第一排气管路、第二排气管路。
于本申请的一实施例中，所述工艺腔室内还设置有环形的分隔板，所述分隔板的外缘与所述工艺腔室的内壁连接，用于在所述工艺腔室分隔所述工艺区及所述传片区；当所述基座位于所述工艺位置时，所述基座的顶面与所述分隔板的顶面平齐。
本申请实施例提供的技术方案带来的有益技术效果是：
本申请实施例在基座内设置有导流结构，在工艺腔室的内壁上设置有排气结构，导流结构能沿基座的周向吹出气体，排气结构可以排出导流结构吹出的气体，以在基座外周与工艺腔室内壁之间形成气墙，实现了工艺区与传片区之间完全隔离，阻止工艺气体向传片区扩散形成颗粒污染，并且也不会因为长期工作带来其他污染或者采用密封部件发生损耗的问题等，从而大幅缩短工艺腔室吹扫时间以提高半导体工艺设备的产能。另外，由于本申请实施例无需设置密封部件，从而大幅提高适用性及适用范围，并且还可以避免由于密封部件损坏造成维护时间较长的问题。
本申请附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为本申请实施例提供的一种半导体工艺设备的基座位于工艺位置的剖视示意图；
图2为本申请实施例提供的一种半导体工艺设备的基座位于传片区内的剖视示意图；
图3为本申请实施例提供的一种承载装置的横向剖视示意图；
图4为本申请实施例提供的一种承载装置的纵向剖视示意图；
图5为本申请实施例提供的一种半导体工艺设备的局部剖视示意图。
具体实施方式
下面详细描述本申请，本申请的实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的部件或具有相同或类似功能的部件。此外，如果已知技术的详细描述对于示出的本申请的特征是不必要的，则将其省略。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能解释为对本申请的限制。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)，具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语，应该被理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样被特定定义，否则不会用理想化或过于正式的含义来解释。
下面以具体地实施例对本申请的技术方案以及本申请的技术方案如何解决上述技术问题进行详细说明。
本申请实施例提供了一种半导体工艺设备，该半导体工艺设备的结构示意图如图1所示，包括：工艺腔室1、进气装置2及承载装置3；工艺腔室1内包括自上至下分布的工艺区11及传片区12；进气装置2设置于工艺腔室1的顶部，用于向工艺区11内通入工艺气体；承载装置3包括有基座31及导流结构32，基座31可升降的设置于传片区12内，用于承载待加工件(图中未示出)；导流结构32设置于基座31内，与一供气源连接，用于在基座31位于工艺位置时，沿基座31的周向吹出气体，在基座31外周与工艺腔室1内壁之间形成气墙，以隔绝工艺气体进入传片区12；工艺腔室1传片区12的内壁中设有排气结构13，当基座31位于工艺位置时，导流结构32与排气结构13相对，排气结构13用于排出导流结构32吹出的气体。
如图1所示，该半导体工艺设备具体可以用于对待加工件执行原子层沉积工艺，该待加工件例如可以是硅片，但是本申请实施例并不以此为限。工艺腔室1具体可以采用金属材质制成的圆筒结构。工艺腔室1内可以自上至下的划分为工艺区11及传片区12。进气装置2具体可以设置于工艺腔室1的顶部，用于向工艺区11内通入工艺气体。基座31具体可以设置于传片区12内，基座31的顶面可以用于承载待加工件。导流结构32设置于基座31内，导流结构32可以与一供气源(图中未示出)连接，用于沿基座31的周向吹出气体，该供气源例如可以是惰性气体供给源，但是本申请实施例并不以此为限。工艺腔室1的内壁圆周方向上开设有排气结构13，排气结构13具体可以位于传片区12的顶部，以便于当基座31上升至工艺位置时，使得导流结构32能与排气结构13对齐，从而将导流结构32吹出的气体排出。
在实际应用时，参照图2所示，基座31位于传片区12内，半导体工艺设备的机械手(图中未示出)将待加工件传输至基座31上。然后基座31可以上升至工艺位置，参照图1所示，基座31可以带动待加工件进入工艺区11，即基座31的顶面位于工艺区11内，以便于工艺腔室1对待加工件执行原子层沉积工艺，此时导流结构32沿基座31的周向吹出气体，以在基座31外周与工艺腔室1内壁之间形成气墙，排气结构13能将导流结构32的吹出的气体沿水平方向导出，不仅能阻止工艺区11内的工艺气体向传片区12扩散以形成颗粒，而且还能避免气体在工艺腔室1内形成紊流影响对工艺气体的隔绝效果，从而避免对工艺腔室1造成污染。
本申请实施例在基座内设置有导流结构，在工艺腔室的内壁上设置有排气结构，导流结构能沿基座的周向吹出气体，排气结构可以排出导流结构吹出的气体，以在基座外周与工艺腔室内壁之间形成气墙，实现了工艺区与传片区之间完全隔离，阻止工艺气体向传片区扩散形成颗粒污染，并且也不会因为长期工作带来其他污染或者采用密封部件发生损耗的问题等，从而大幅缩短工艺腔室吹扫时间以提高半导体工艺设备的产能。另外，由于本申请实施例无需设置密封部件，从而大幅提高适用性及适用范围，并且还可以避免由于密封部件损坏造成维护时间较长的问题。
需要说明的是，本申请实施例并不限定工艺腔室1具体执行何种工艺，例如工艺腔室1也可以用于执行物理气相沉积或者化学气相沉积工艺。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1至图4所示，基座31包括基座本体311和支撑轴312，基座本体311用于承载待加工件，支撑轴312一端与基座本体311连接，另一端穿过工艺腔室1的底壁与一驱动源(图中未示出)连接；导流结构32包括导流缝33及多个气流道34，导流缝33开设于基座本体311的外周壁上，并且沿基座本体311的周向延伸设置；气流道34开设于基座本体311和支撑轴312中，其两端分别与导流缝33及供气源连接，用于将气体导引至导流缝33。
如图1至图4所示，基座本体311具体可以为采用金属材质制成的圆盘形结构，基座本体311的上表面用于承载待加工件。支撑轴312具体可以采用与基座本体311相同的材质且一体成型，两者也可以采用分体式结构，因此本申请实施例并不以此为限。支撑轴312的顶端位于基座本体311的底面中部，支撑轴312的底端穿过工艺腔室1的底壁后与一驱动源(图中未示出)连接，以用于通过支撑轴312带动基座本体311上升至工艺位置。驱动源具体可以采用丝杠机构或者伸缩气缸机构，但是本申请实施例并不以此为限。导流缝33具体可以为由基座本体311的外周壁向中心位置延伸设置的狭缝，并且导流缝33沿基座本体311的圆周方向延伸设置，以使得导流缝33内的气体沿水平方向吹出。多个气流道34均可以设置于在基座本体311及支撑轴312内，多个气流道34均与一供气源连接，以用于将气体导引至导流缝33内，以使得气体由导流缝33内吹出。具体来说，基座本体311可以采用两个叠置的圆盘，并且在两个圆盘相对的表面靠近边缘的位置设置圆形凹槽，并且在两个圆盘相对的表面上开设有多个沟槽，两个圆盘叠置以形成导流缝33及部分气流道34。采用上述设计，多个气流道34使得气体均匀的由导流缝33吹出，并且采用上述设计使得本申请实施例结构简单，从而大幅降低应用及维护成本。
需要说明的是，本申请实施例并不限定基座31及导流结构32的具体实施方式，例如基座本体311为一体结构并且在基座本体311上加工出导流缝33。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图3及图4所示，导流结构32还包括有环形的增压腔35，增压腔35形成于基座本体311内且环绕基座本体311的轴心设置，多个气流道34均通过增压腔35与导流缝33连通。
如图3及图4所示，增压腔35可以形成于基座本体311内，并且位于导流缝33的内侧，增压腔35具体为环形并且与基座本体311的同心设置。增压腔35的内侧与多个气流道34连接，外侧与导流缝33连接。由于增压腔35沿基座本体311的轴向高度远大于导流缝33沿基座本体311轴向高度，因此当气体经由增压腔35再进入导流缝33，使得导流缝33吹气压力较大，从而进一步提高工艺区11与传片区12之间的隔绝效果。在实际应用时，气体从气流道34进入增压腔35内，增压腔35能对气体在圆周方向进行平均分配，最后通过导流缝33均匀吹出，从而在基座本体311外周与工艺腔室1内壁之间形成一道气墙，阻止工艺气体向传片区12扩散，从而起到完全隔离的效果。采用上述设计，由于设置有增压腔35不仅能增加导流缝33吹出气体的压力，而且可以大幅提高吹出气体的均匀性。进一步的，基座本体311内的气流道34避开基座31内的升降组件设置，以避免气流道34与升降组件之间发生机械干涉，从而降低故障率以延长使用寿命。
于本申请的一实施例中，如图3及图4所示，多个气流道34位于基座本体311中的部分均沿基座本体311径向延伸设置，并且沿基座本体311的周向均匀排布；多个气流道34位于支撑轴312中的部分均沿支撑轴312的轴向延伸设置，且围绕支撑轴312的轴线均匀排布。具体来说，多个气流道34可以设置三个，三个气流道34位于基座本体311内的部分均沿基座本体311的径向由中心向边缘延伸设置，并且三个气流道34沿基座本体311的周向均匀分布。三个气流道34位于支撑轴312内的部分沿支撑轴312的轴向延伸设置，并且三个气流道34可以围绕支撑轴312的轴线均布。采用上述设计，由于多个气流道34均匀设置，使得导流缝33吹出的气体更加均匀，从而进一步的提高气墙的隔绝效果。但是本申请实施例并不限定气流道34的具体数量，例如气流道34的具体数量可以为三个以上。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1至图4所示，排气结构13包括排气腔15和第一排气管路41，排气腔15呈环形，形成于工艺腔室1传片区12的侧壁中，沿侧壁的周向延伸设置，侧壁上开设有沿侧壁的周向延伸设置且连通排气腔15的排气口14，在基座31位于工艺位置时，排气口14与导流缝33相对，排气口14高度大于导流缝33的高度，第一排气管路41一端与排气腔15连通，另一端与第一抽气装置51连通。
如图1至图4所示，排气口14具体为开设于工艺腔室1传片区12的侧壁上的狭缝，该排气口14沿工艺腔室1的内壁的圆周方向延伸设置，并且排气口14的高度大于导流缝33高度，在基座31位于工艺位置且导流缝33吹出气体时，排气口14可以快速将气体导引至排气腔15内，从而提高气体的排出速率以减少产生气体紊流。排气腔15同样开设于工艺腔室1传片区12的侧壁内，并且位于排气口14的内侧设置，即排气腔15相对靠近工艺腔室1侧壁外侧设置。排气腔15具体沿工艺腔室1的圆周方向延伸的矩形空腔。第一排气管路41的部分形成于工艺腔室1的侧壁内且与排气结构13连接，第一排气管路41的其它部分可以采用金属管路或者其它耐腐蚀材质制成的管路。第一排气管路41的一端与排气腔15连接，另一端与第一抽气装置51连接，以用于将排气腔15内的气体抽出。采用该设计，第一排气管路41与排气腔15配合，不仅能提高排气效率减少气体紊流的产生，而且还可以将进入气墙区域的工艺气体直接抽出，避免工艺气体进入传片区12内形成颗粒，从而避免工艺腔室1内受到颗粒污染。
于本申请的一实施例中，如图1及图2所示，半导体工艺设备还包括有第二排气管路42，第二排气管路42的两端分别与传片区12及第一抽气装置51连接。
如图1及图2所示，第二排气管路42具体可以采用金属管路或者其它耐腐蚀材质制成的管路，第二排气管路42的一端位于工艺腔室1的底部，并且与传片区12连接，而第二排气管路42的另一端与第一抽气装置51连接，以用于抽出传片区12内的气体。采用上述设计，由于设置第二排气管路42，当基座本体311位于传片区12以进行传片时，工艺腔室1内的所有气体均可以由第二排气管路42排出，避免传片区12的颗粒上扬至工艺区11内对待加工件造成污染，从而大幅提高待加工件的工艺良率。
需要说明的是，本申请实施例并不限定第一排气管路41及第二排气管路42的具体实施方式，例如第一排气管路41及第二排气管路42均形成于工艺腔室1侧壁内。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1及图2所示，工艺腔室1工艺区11的内壁上设有工艺排气结构，工艺排气结构用于排出工艺气体。可选地，工艺排气结构包括排气槽71、排气栅72及第三排气管路43，排气槽71呈环形，开设在工艺腔室1工艺区11的侧壁上，沿侧壁的周向延伸设置，排气栅72呈环形，设置在排气槽71的开口处，第三排气管路43一端与排气槽71连通，另一端与第二抽气装置52连通。
如图1及图2所示，工艺腔室1的工艺区11的内壁上设置有排气槽71，该排气槽71具体可以为沿工艺腔室1周向延伸设置的矩形空腔，并且该排气槽71与工艺区11连通设置。排气栅72具体为环形板状结构，并且排气栅72的高度与排气槽71的开口高度相同，排气栅72设置为该排气槽71的开口处。第三排气管路43的部分可以形成于工艺腔室1的侧壁内，其它部分采用金属或其它耐腐蚀材料制成的管路，第三排气管路43的一端与排气槽71连接，另一端与第二抽气装置52连接，第二抽气装置52用于将工艺区11内工艺气体导出。在执行工艺过程中，第二抽气装置52直接将工艺气体导出，以便于对待加工件执行工艺。采用上述设计，由于工艺区11设置有单独的工艺排气结构，可以进一步防止工艺区11内的工艺气体扩散至传片区12内。但是本申请实施例并不限定工艺排气结构的具体实施方式，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1及图2所示，第一排气管路41及第二排气管路42上均设置有阀门6，阀门6用于导通或关闭第一排气管路41及第二排气管路42；第三排气管路43上设置有阀门6，阀门6用于导通或关闭第一排气管路41、第二排气管路42。具体来说，阀门6具体可以采用电磁阀，并且与半导体工艺设备的上位机连接，上位机可以根据实际需求通过阀门6来控制各排气管路的通断。例如在本申请的一实施例中，当第三排气管路43上的阀门6开启时，说明此时工艺腔室1处于工艺状态，因此上位机可以根据第三排气管路43的状态，控制第一排气管路41及第二排气管路42上的阀门开启，以使基座31与工艺腔室1的内壁之间形成气墙；当第三排气管路43上的阀门6关闭时，说明此时工艺腔室1处于传片状态，因此上位机可以根据第三排气管路43的状态，控制第一排气管路41上的阀门6关闭，并且控制第二排气管路42上的阀门6开启，以使工艺腔室1内的所有气体均由第二排气管路42排出，以避免传片区12内的颗粒上扬至工艺区，从而进一步防止污染待加工件。采用上述设计，不仅能提高待加工件的良率，而且还能大幅提高本申请实施例的自动化控制水平。
于本申请的一实施例中，如1及图5所示，工艺腔室1内还设置有环形的分隔板17，分隔板17的外缘与工艺腔室1的内壁连接，用于在工艺腔室1分隔工艺区11及传片区12；当基座本体311位于工艺位置时，基座本体311的顶面与分隔板17的顶面平齐。具体来说，分隔板17具体采用金属材质制成的环形板，分隔板17的外缘例如通过焊接方式与工艺腔室1的内壁连接，但是本申请实施例并不限定具体连接方式。基座本体311的外周壁可以形成有凸台，当基座本体311位于工艺位置时，基座本体311顶部伸入分隔板17内，基座本体311的顶面与分隔板17顶面平齐设置，且基座本体311的顶部的外周壁与分隔板17的内缘间隙设置，凸台的顶面可以与分隔板17的底面贴合设置或间隙设置。采用上述设计，分隔板17可以进一步防止工艺区11内的工艺气体扩散至传片区12。此外，采用上述设计还可以避免基座本体311与分隔板17之间发生机械干涉，从而降低本申请实施例的故障率。
在实际应用时，工艺气体从进气装置2喷出以进入到工艺区11内，并且对基座本体311上的待加工件执行工艺，然后经由第三排气管路43排出。在执行工艺的过程中，少量工艺气体会沿着分隔板17和基座本体311边缘之间的缝隙试图扩散到传片区12，此时由于导流缝33吹出的气体形成气墙，可以阻止工艺气体扩散到传片区12内，并且气墙可以带动工艺气体经由排气口14进入第一排气管路41后排出，以阻止了工艺气体扩散至传片区12，从而实现了工艺区11和传片区12的完全隔离，工艺气体走向具体可以参照如图5所示。
应用本申请实施例，至少能够实现如下有益效果：
本申请实施例在基座内设置有导流结构，在工艺腔室的内壁上设置有排气结构，导流结构能沿基座的周向吹出气体，排气结构可以排出导流结构吹出的气体，以在基座外周与工艺腔室内壁之间形成气墙，实现了工艺区与传片区之间完全隔离，阻止工艺气体向传片区扩散形成颗粒污染，并且也不会因为长期工作带来其他污染或者采用密封部件发生损耗的问题等，从而大幅缩短工艺腔室吹扫时间以提高半导体工艺设备的产能。另外，由于本申请实施例无需设置密封部件，从而大幅提高适用性及适用范围，并且还可以避免由于密封部件损坏造成维护时间较长的问题。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。
在本申请的描述中，需要理解的是，术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
在本说明书的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述仅是本申请的部分实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (10)

1.一种半导体工艺设备，其特征在于，包括：工艺腔室、进气装置及承载装置；
所述工艺腔室内包括自上至下分布的工艺区及传片区；所述进气装置设置于所述工艺腔室的顶部，用于向所述工艺区内通入工艺气体；
所述承载装置包括有基座及导流结构，所述基座可升降的设置于所述传片区内，用于承载待加工件；所述导流结构设置于所述基座内，与一供气源连接，用于在所述基座位于工艺位置时，沿所述基座的周向吹出气体，在所述基座外周与所述工艺腔室内壁之间形成气墙，以隔绝所述工艺气体进入所述传片区；
所述工艺腔室传片区的内壁中设有排气结构，当所述基座位于所述工艺位置时，所述导流结构与所述排气结构相对，所述排气结构用于排出所述导流结构吹出的气体。
2.如权利要求1所述的半导体工艺设备，其特征在于，所述基座包括基座本体和支撑轴，所述基座本体用于承载所述待加工件，所述支撑轴一端与所述基座本体连接，另一端穿过所述工艺腔室的底壁与一驱动源连接；
所述导流结构包括导流缝及多个气流道，所述导流缝开设于所述基座本体的外周壁上，并且沿所述基座本体的周向延伸设置；所述气流道开设于所述基座本体和所述支撑轴中，其两端分别与所述导流缝及所述供气源连接，用于将所述气体导引至所述导流缝。
3.如权利要求2所述的半导体工艺设备，其特征在于，所述导流结构还包括有环形的增压腔，所述增压腔形成于所述基座本体内且环绕所述基座本体的轴心设置，多个所述气流道均通过所述增压腔与所述导流缝连通。
4.如权利要求3所述的半导体工艺设备，其特征在于，多个所述气流道位于所述基座本体中的部分均沿所述基座本体的径向延伸设置，并且沿所述基座本体的周向均匀排布；多个所述气流道位于所述支撑轴中的部分均沿所述支撑轴的轴向延伸设置，且围绕所述支撑轴的轴线均匀排布。
5.如权利要求2所述的半导体工艺设备，其特征在于，所述排气结构包括排气腔和第一排气管路，所述排气腔呈环形，形成于所述工艺腔室传片区的侧壁中，沿所述侧壁的周向延伸设置，所述侧壁上开设有沿所述侧壁的周向延伸设置且连通所述排气腔的排气口，在所述基座位于工艺位置时，所述排气口与所述导流缝相对，所述排气口的高度大于所述导流缝的高度，所述第一排气管路一端与所述排气腔连通，另一端与第一抽气装置连通。
6.如权利要求5所述的半导体工艺设备，其特征在于，所述半导体工艺设备还包括第二排气管路，所述第二排气管路的两端分别与所述传片区及所述第一抽气装置连接。
7.如权利要求1所述的半导体工艺设备，其特征在于，所述工艺腔室工艺区的内壁上设有工艺排气结构，所述工艺排气结构用于排出所述工艺气体。
8.如权利要求7所述的半导体工艺设备，其特征在于，所述工艺排气结构包括排气槽、排气栅及第三排气管路，所述排气槽呈环形，开设在所述工艺腔室工艺区的侧壁上，沿所述侧壁的周向延伸设置，所述排气栅呈环形，设置在所述排气槽的开口处，所述第三排气管路一端与所述排气槽连通，另一端与第二抽气装置连通。
9.如权利要求6或8所述的半导体工艺设备，其特征在于，所述第一排气管路、第二排气管路上均设置有阀门，所述阀门用于导通或关闭所述第一排气管路、第二排气管路；所述第三排气管路上设置有所述阀门，所述阀门用于导通或关闭所述第一排气管路、第二排气管路。
10.如权利要求1至8的任一所述的半导体工艺设备，其特征在于，所述工艺腔室内还设置有环形的分隔板，所述分隔板的外缘与所述工艺腔室的内壁连接，用于在所述工艺腔室分隔所述工艺区及所述传片区；当所述基座位于所述工艺位置时，所述基座的顶面与所述分隔板的顶面平齐。
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