CN104303276B - 防止相邻器件的短路的方法 - Google Patents
防止相邻器件的短路的方法 Download PDFInfo
- Publication number
- CN104303276B CN104303276B CN201380025170.9A CN201380025170A CN104303276B CN 104303276 B CN104303276 B CN 104303276B CN 201380025170 A CN201380025170 A CN 201380025170A CN 104303276 B CN104303276 B CN 104303276B
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- fin
- sacrifice layer
- epitaxial film
- substrate
- silicon
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical class [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
- H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/471,487 US8586455B1 (en) | 2012-05-15 | 2012-05-15 | Preventing shorting of adjacent devices |
US13/471,487 | 2012-05-15 | ||
PCT/US2013/034576 WO2013172986A1 (en) | 2012-05-15 | 2013-03-29 | Preventing shorting of adjacent devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104303276A CN104303276A (zh) | 2015-01-21 |
CN104303276B true CN104303276B (zh) | 2018-01-26 |
Family
ID=49555727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380025170.9A Expired - Fee Related CN104303276B (zh) | 2012-05-15 | 2013-03-29 | 防止相邻器件的短路的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8586455B1 (zh) |
JP (1) | JP2015517737A (zh) |
KR (1) | KR101581153B1 (zh) |
CN (1) | CN104303276B (zh) |
DE (1) | DE112013001404B4 (zh) |
GB (1) | GB2516395B (zh) |
TW (1) | TWI529940B (zh) |
WO (1) | WO2013172986A1 (zh) |
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KR102045212B1 (ko) * | 2013-04-23 | 2019-11-15 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
KR102065973B1 (ko) * | 2013-07-12 | 2020-01-15 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US9054218B2 (en) * | 2013-08-07 | 2015-06-09 | International Business Machines Corporation | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same |
US9177805B2 (en) * | 2014-01-28 | 2015-11-03 | GlobalFoundries, Inc. | Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same |
US9299706B1 (en) * | 2014-09-25 | 2016-03-29 | International Business Machines Corporation | Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins |
KR102330757B1 (ko) | 2015-03-30 | 2021-11-25 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US10366988B2 (en) * | 2015-08-14 | 2019-07-30 | International Business Machines Corporation | Selective contact etch for unmerged epitaxial source/drain regions |
KR102502885B1 (ko) | 2015-10-06 | 2023-02-23 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9570555B1 (en) | 2015-10-29 | 2017-02-14 | International Business Machines Corporation | Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices |
US9601567B1 (en) | 2015-10-30 | 2017-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple Fin FET structures having an insulating separation plug |
US9425108B1 (en) | 2015-12-05 | 2016-08-23 | International Business Machines Corporation | Method to prevent lateral epitaxial growth in semiconductor devices |
US9496400B1 (en) * | 2015-12-29 | 2016-11-15 | International Business Machines Corporation | FinFET with stacked faceted S/D epitaxy for improved contact resistance |
KR102551349B1 (ko) | 2016-01-22 | 2023-07-04 | 삼성전자 주식회사 | 반도체 소자 및 그 제조 방법 |
US9837535B2 (en) * | 2016-03-03 | 2017-12-05 | International Business Machines Corporation | Directional deposition of protection layer |
CN106206689B (zh) * | 2016-07-27 | 2019-07-26 | 华东师范大学 | 适用于存储单元的具备独立三栅结构的FinFET器件 |
US10014303B2 (en) * | 2016-08-26 | 2018-07-03 | Globalfoundries Inc. | Devices with contact-to-gate shorting through conductive paths between fins and fabrication methods |
US9748245B1 (en) * | 2016-09-23 | 2017-08-29 | International Business Machines Corporation | Multiple finFET formation with epitaxy separation |
US10886268B2 (en) | 2016-11-29 | 2021-01-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device with separated merged source/drain structure |
US10998310B2 (en) * | 2018-07-09 | 2021-05-04 | Taiwan Semiconductor Manufacturing Company Ltd. | Fins with wide base in a FINFET |
KR102626334B1 (ko) * | 2018-07-27 | 2024-01-16 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US10811422B2 (en) | 2018-11-20 | 2020-10-20 | Globalfoundries Inc. | Semiconductor recess to epitaxial regions and related integrated circuit structure |
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-
2012
- 2012-05-15 US US13/471,487 patent/US8586455B1/en not_active Expired - Fee Related
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2013
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- 2013-03-29 DE DE112013001404.1T patent/DE112013001404B4/de not_active Expired - Fee Related
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Patent Citations (2)
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CN102194755A (zh) * | 2010-03-01 | 2011-09-21 | 台湾积体电路制造股份有限公司 | 鳍式场效晶体管及其制造方法 |
CN102194756A (zh) * | 2010-03-17 | 2011-09-21 | 台湾积体电路制造股份有限公司 | 鳍式场效晶体管及其制法 |
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JP2015517737A (ja) | 2015-06-22 |
TW201351650A (zh) | 2013-12-16 |
TWI529940B (zh) | 2016-04-11 |
GB201420180D0 (en) | 2014-12-31 |
KR101581153B1 (ko) | 2015-12-30 |
GB2516395A (en) | 2015-01-21 |
DE112013001404T5 (de) | 2014-12-11 |
WO2013172986A1 (en) | 2013-11-21 |
GB2516395B (en) | 2016-03-30 |
US20130309837A1 (en) | 2013-11-21 |
DE112013001404B4 (de) | 2016-12-29 |
CN104303276A (zh) | 2015-01-21 |
KR20150003806A (ko) | 2015-01-09 |
US8586455B1 (en) | 2013-11-19 |
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