CN104299945A - 固态成像设备及其制造方法 - Google Patents

固态成像设备及其制造方法 Download PDF

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Publication number
CN104299945A
CN104299945A CN201410331473.XA CN201410331473A CN104299945A CN 104299945 A CN104299945 A CN 104299945A CN 201410331473 A CN201410331473 A CN 201410331473A CN 104299945 A CN104299945 A CN 104299945A
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CN
China
Prior art keywords
film layer
thin film
sealing resin
optical thin
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410331473.XA
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English (en)
Chinese (zh)
Inventor
前原正孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN104299945A publication Critical patent/CN104299945A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CN201410331473.XA 2013-07-19 2014-07-11 固态成像设备及其制造方法 Pending CN104299945A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-150480 2013-07-19
JP2013150480A JP6120075B2 (ja) 2013-07-19 2013-07-19 固体撮像装置および固体撮像装置の製造方法。

Publications (1)

Publication Number Publication Date
CN104299945A true CN104299945A (zh) 2015-01-21

Family

ID=52319615

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410331473.XA Pending CN104299945A (zh) 2013-07-19 2014-07-11 固态成像设备及其制造方法

Country Status (3)

Country Link
US (2) US9461082B2 (https=)
JP (1) JP6120075B2 (https=)
CN (1) CN104299945A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112341A (zh) * 2015-03-05 2017-08-29 索尼公司 半导体装置和制造方法以及电子设备
CN113660817A (zh) * 2020-05-12 2021-11-16 奥特斯奥地利科技与系统技术有限公司 部件承载件、部件承载件组件及其制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018011018A (ja) * 2016-07-15 2018-01-18 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
US11676929B2 (en) 2016-10-21 2023-06-13 Sony Semiconductor Solutions Corporation Electronic substrate and electronic apparatus
US10910289B2 (en) * 2016-10-21 2021-02-02 Sony Semiconductor Solutions Corporation Electronic substrate and electronic apparatus
US11217615B2 (en) 2017-01-30 2022-01-04 Sony Semiconductor Solutions Corporation Imaging element, fabrication method, and electronic equipment
JP7060835B2 (ja) * 2017-09-26 2022-04-27 カシオ計算機株式会社 回路基板、電子機器、および回路基板の製造方法
US11770627B1 (en) 2019-10-04 2023-09-26 Ball Aerospace & Technologies Corp. Systems and methods for direct measurement of photon arrival rate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110042797A1 (en) * 2009-08-19 2011-02-24 Samsung Electronics Co., Ltd Semiconductor package and method of manufacturing the same
US20110049557A1 (en) * 2009-09-02 2011-03-03 Hu Meng Optical device and method of manufacturing the same
CN102244068A (zh) * 2010-05-14 2011-11-16 索尼公司 半导体器件、半导体器件制造方法以及电子装置
US20120208697A1 (en) * 2011-02-16 2012-08-16 Ricoh Company, Ltd. Reversible thermosensitive recording medium and method for producing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124654A (ja) * 2000-10-13 2002-04-26 Mitsubishi Electric Corp 固体撮像装置
JP2003234362A (ja) * 2002-02-12 2003-08-22 Yokogawa Electric Corp 半導体装置
US7122874B2 (en) * 2004-04-12 2006-10-17 Optopac, Inc. Electronic package having a sealing structure on predetermined area, and the method thereof
JP2007067317A (ja) 2005-09-02 2007-03-15 Seiko Epson Corp 半導体装置の実装構造、及び半導体装置の実装方法
JP2009239258A (ja) * 2008-03-05 2009-10-15 Panasonic Corp 光学デバイス及びその製造方法
JP2009251249A (ja) * 2008-04-04 2009-10-29 Sharp Corp ウエハ状光学装置およびその製造方法、電子素子ウエハモジュール、センサウエハモジュール、電子素子モジュール、センサモジュール、電子情報機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110042797A1 (en) * 2009-08-19 2011-02-24 Samsung Electronics Co., Ltd Semiconductor package and method of manufacturing the same
US20110049557A1 (en) * 2009-09-02 2011-03-03 Hu Meng Optical device and method of manufacturing the same
CN102244068A (zh) * 2010-05-14 2011-11-16 索尼公司 半导体器件、半导体器件制造方法以及电子装置
US20120208697A1 (en) * 2011-02-16 2012-08-16 Ricoh Company, Ltd. Reversible thermosensitive recording medium and method for producing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112341A (zh) * 2015-03-05 2017-08-29 索尼公司 半导体装置和制造方法以及电子设备
CN107112341B (zh) * 2015-03-05 2020-12-18 索尼公司 半导体装置和制造方法以及电子设备
CN113660817A (zh) * 2020-05-12 2021-11-16 奥特斯奥地利科技与系统技术有限公司 部件承载件、部件承载件组件及其制造方法
US11612064B2 (en) 2020-05-12 2023-03-21 AT&SAustria Technologie & Systemtechnik AG Component carrier with a solid body protecting a component carrier hole from foreign material ingression

Also Published As

Publication number Publication date
JP6120075B2 (ja) 2017-04-26
US20170012073A1 (en) 2017-01-12
US10461111B2 (en) 2019-10-29
US9461082B2 (en) 2016-10-04
JP2015023163A (ja) 2015-02-02
US20150021729A1 (en) 2015-01-22

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