CN104282537B - 半导体器件及制造方法 - Google Patents

半导体器件及制造方法 Download PDF

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Publication number
CN104282537B
CN104282537B CN201410476272.9A CN201410476272A CN104282537B CN 104282537 B CN104282537 B CN 104282537B CN 201410476272 A CN201410476272 A CN 201410476272A CN 104282537 B CN104282537 B CN 104282537B
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region
jte
type
junction
semiconductor layer
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Chinese (zh)
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CN104282537A (zh
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P·A·罗西
A·V·博罗特尼科夫
S·J·肯纳利
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General Electric Co
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General Electric Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
CN201410476272.9A 2013-07-02 2014-07-02 半导体器件及制造方法 Active CN104282537B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/933366 2013-07-02
US13/933,366 US10347489B2 (en) 2013-07-02 2013-07-02 Semiconductor devices and methods of manufacture

Publications (2)

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CN104282537A CN104282537A (zh) 2015-01-14
CN104282537B true CN104282537B (zh) 2020-10-09

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US (1) US10347489B2 (enExample)
JP (1) JP6812087B2 (enExample)
CN (1) CN104282537B (enExample)
BR (1) BR102014016375A2 (enExample)
CA (1) CA2855304C (enExample)
FR (1) FR3008226B1 (enExample)
GB (1) GB2517285B (enExample)
IN (1) IN2014CH03234A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431654B2 (en) 2015-06-25 2019-10-01 International Business Machines Corporation Extrinsic base doping for bipolar junction transistors
JP6809330B2 (ja) * 2017-03-28 2021-01-06 豊田合成株式会社 半導体装置の製造方法
DE102018103550B4 (de) * 2018-02-16 2021-08-12 Infineon Technologies Ag Halbleitervorrichtung mit einem halbleiterkörper aus siliziumcarbid
CN111584623A (zh) * 2020-06-02 2020-08-25 吉林华微电子股份有限公司 一种双极结型晶体管器件及其制造方法、电子产品
DE112020007759T5 (de) * 2020-11-06 2023-08-17 Hitachi Energy Switzerland Ag Leistungshalbleitervorrichtung und betriebsverfahren
CN113437154B (zh) * 2021-06-24 2025-03-21 派恩杰半导体(浙江)有限公司 终端有源区同设计的SiC功率器件及其制备方法

Citations (2)

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US20100289032A1 (en) * 2009-05-12 2010-11-18 Qingchun Zhang Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
CN102479807A (zh) * 2010-11-26 2012-05-30 三菱电机株式会社 碳化硅半导体装置及其制造方法

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GB2131603B (en) 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices
US6002159A (en) 1996-07-16 1999-12-14 Abb Research Ltd. SiC semiconductor device comprising a pn junction with a voltage absorbing edge
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US7033950B2 (en) 2001-12-19 2006-04-25 Auburn University Graded junction termination extensions for electronic devices
US9515135B2 (en) 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US6927153B2 (en) 2003-02-25 2005-08-09 Xerox Corporation Ion implantation with multiple concentration levels
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2008010506A (ja) 2006-06-27 2008-01-17 Matsushita Electric Ind Co Ltd 半導体装置
US8377812B2 (en) 2006-11-06 2013-02-19 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
US8564088B2 (en) * 2008-08-19 2013-10-22 Infineon Technologies Austria Ag Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
US7800196B2 (en) 2008-09-30 2010-09-21 Northrop Grumman Systems Corporation Semiconductor structure with an electric field stop layer for improved edge termination capability
JP5601849B2 (ja) * 2010-02-09 2014-10-08 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2012064873A (ja) * 2010-09-17 2012-03-29 Rohm Co Ltd 半導体装置およびその製造方法
US8563988B2 (en) * 2010-10-29 2013-10-22 Panasonic Corporation Semiconductor element and manufacturing method therefor
JP5697744B2 (ja) 2011-04-04 2015-04-08 三菱電機株式会社 半導体装置およびその製造方法
US9318623B2 (en) 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
JP5845714B2 (ja) 2011-08-19 2016-01-20 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2013061433A1 (ja) 2011-10-26 2013-05-02 トヨタ自動車株式会社 半導体装置
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US20100289032A1 (en) * 2009-05-12 2010-11-18 Qingchun Zhang Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
CN102479807A (zh) * 2010-11-26 2012-05-30 三菱电机株式会社 碳化硅半导体装置及其制造方法
JP2012129492A (ja) * 2010-11-26 2012-07-05 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法

Also Published As

Publication number Publication date
GB2517285A (en) 2015-02-18
GB201411664D0 (en) 2014-08-13
BR102014016375A2 (pt) 2016-05-31
CA2855304C (en) 2021-09-28
FR3008226B1 (fr) 2019-05-31
IN2014CH03234A (enExample) 2015-09-18
CA2855304A1 (en) 2015-01-02
US10347489B2 (en) 2019-07-09
GB2517285B (en) 2017-03-29
JP6812087B2 (ja) 2021-01-13
JP2015015468A (ja) 2015-01-22
CN104282537A (zh) 2015-01-14
FR3008226A1 (fr) 2015-01-09
US20150008446A1 (en) 2015-01-08

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