CN104246967B - 用于提供顺序的功率脉冲的方法 - Google Patents

用于提供顺序的功率脉冲的方法 Download PDF

Info

Publication number
CN104246967B
CN104246967B CN201280065357.7A CN201280065357A CN104246967B CN 104246967 B CN104246967 B CN 104246967B CN 201280065357 A CN201280065357 A CN 201280065357A CN 104246967 B CN104246967 B CN 104246967B
Authority
CN
China
Prior art keywords
power
generator
interval
negative electrode
output pulses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280065357.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN104246967A (zh
Inventor
S·克拉斯尼策尔
D·伦迪
M·莱希塔勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
Original Assignee
Oerlikon Surface Solutions AG Pfaeffikon
Oerlikon Trading AG Truebbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions AG Pfaeffikon, Oerlikon Trading AG Truebbach filed Critical Oerlikon Surface Solutions AG Pfaeffikon
Publication of CN104246967A publication Critical patent/CN104246967A/zh
Application granted granted Critical
Publication of CN104246967B publication Critical patent/CN104246967B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Measuring Volume Flow (AREA)
  • Fluidized-Bed Combustion And Resonant Combustion (AREA)
  • Plasma Technology (AREA)
  • Electrostatic Separation (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
CN201280065357.7A 2011-10-28 2012-10-08 用于提供顺序的功率脉冲的方法 Active CN104246967B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011117177.4 2011-10-28
DE102011117177A DE102011117177A1 (de) 2011-10-28 2011-10-28 Verfahren zur Bereitstellung sequenzieller Leistungspulse
PCT/EP2012/004203 WO2013060415A1 (de) 2011-10-28 2012-10-08 Verfahren zur bereitstellung sequenzieller leistungspulse

Publications (2)

Publication Number Publication Date
CN104246967A CN104246967A (zh) 2014-12-24
CN104246967B true CN104246967B (zh) 2017-04-19

Family

ID=47177865

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280065357.7A Active CN104246967B (zh) 2011-10-28 2012-10-08 用于提供顺序的功率脉冲的方法

Country Status (24)

Country Link
US (1) US9906210B2 (enExample)
EP (1) EP2771901B1 (enExample)
JP (1) JP6236651B2 (enExample)
KR (1) KR101930579B1 (enExample)
CN (1) CN104246967B (enExample)
AR (1) AR088318A1 (enExample)
BR (1) BR112014010115B1 (enExample)
CA (1) CA2853699C (enExample)
DE (1) DE102011117177A1 (enExample)
DK (1) DK2771901T3 (enExample)
ES (1) ES2705974T3 (enExample)
HU (1) HUE043149T2 (enExample)
IN (1) IN2014DN03385A (enExample)
MX (1) MX360116B (enExample)
MY (1) MY175563A (enExample)
PH (1) PH12014500941A1 (enExample)
PL (1) PL2771901T3 (enExample)
PT (1) PT2771901T (enExample)
RU (1) RU2631670C2 (enExample)
SG (1) SG11201401877QA (enExample)
SI (1) SI2771901T1 (enExample)
TR (1) TR201900589T4 (enExample)
TW (1) TWI564415B (enExample)
WO (1) WO2013060415A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011121770A1 (de) * 2011-12-21 2013-06-27 Oerlikon Trading Ag, Trübbach Homogenes HIPIMS-Beschichtungsverfahren
DE102013011073A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach TlxSi1-xN Schichten und ihre Herstellung
DE102013011075A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag TiB2 Schichten und ihre Herstellung
JP6122975B2 (ja) † 2013-07-03 2017-04-26 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン ＴｉｘＳｉ１−ｘＮ層を含んでなるコーティングによりワークピースをコーティングする方法
DE102013011072A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach Targetpräparation
DE102013011071A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach TixSi1-xN Schichten mit CryAl1-yN Haftschicht und ihre Herstellung
KR102117739B1 (ko) 2016-09-30 2020-06-09 주식회사 엘지화학 음극지지체형 고체산화물 연료전지 제조방법
EP3406751A1 (en) 2017-05-24 2018-11-28 Walter Ag A coated cutting tool and a method for its production
EP3406761A1 (en) 2017-05-24 2018-11-28 Walter Ag A method for producing a coated cutting tool and a coated cutting tool

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6141766A (ja) * 1984-08-06 1986-02-28 Hitachi Ltd スパツタリング方法およびスパツタ−装置
JPH07116596B2 (ja) * 1989-02-15 1995-12-13 株式会社日立製作所 薄膜形成方法、及びその装置
CA2218279A1 (en) * 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6878242B2 (en) * 2003-04-08 2005-04-12 Guardian Industries Corp. Segmented sputtering target and method/apparatus for using same
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
EP1935000A1 (en) * 2005-10-13 2008-06-25 NV Bekaert SA A method to deposit a coating by sputtering
DE102006017382A1 (de) 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen
EP2102888B1 (en) * 2006-12-12 2015-07-29 Oerlikon Advanced Technologies AG Arc suppression and pulsing in high power impulse magnetron sputtering (hipims)
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
WO2009132822A2 (de) * 2008-04-28 2009-11-05 Cemecon Ag Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern
JP5037475B2 (ja) * 2008-11-11 2012-09-26 株式会社神戸製鋼所 スパッタ装置
DE202010001497U1 (de) * 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
DE102011018363A1 (de) * 2011-04-20 2012-10-25 Oerlikon Trading Ag, Trübbach Hochleistungszerstäubungsquelle
DE102011121770A1 (de) * 2011-12-21 2013-06-27 Oerlikon Trading Ag, Trübbach Homogenes HIPIMS-Beschichtungsverfahren
JP7116596B2 (ja) * 2018-05-31 2022-08-10 川崎重工業株式会社 リード線挿入装置およびリード線挿入方法

Also Published As

Publication number Publication date
EP2771901A1 (de) 2014-09-03
MX2014005134A (es) 2014-10-06
MY175563A (en) 2020-07-01
CA2853699A1 (en) 2013-05-02
RU2014121388A (ru) 2015-12-10
CN104246967A (zh) 2014-12-24
EP2771901B1 (de) 2018-12-12
MX360116B (es) 2018-10-23
JP2015501383A (ja) 2015-01-15
PT2771901T (pt) 2019-02-08
AR088318A1 (es) 2014-05-28
SG11201401877QA (en) 2014-09-26
TW201337016A (zh) 2013-09-16
PL2771901T3 (pl) 2019-04-30
SI2771901T1 (sl) 2019-05-31
KR20140097214A (ko) 2014-08-06
BR112014010115A2 (pt) 2017-06-13
WO2013060415A1 (de) 2013-05-02
TWI564415B (zh) 2017-01-01
US20140339917A1 (en) 2014-11-20
IN2014DN03385A (enExample) 2015-06-05
DK2771901T3 (en) 2019-02-18
RU2631670C2 (ru) 2017-09-26
DE102011117177A1 (de) 2013-05-02
US9906210B2 (en) 2018-02-27
JP6236651B2 (ja) 2017-11-29
KR101930579B1 (ko) 2018-12-18
ES2705974T3 (es) 2019-03-27
BR112014010115B1 (pt) 2021-11-16
HUE043149T2 (hu) 2019-08-28
CA2853699C (en) 2019-08-06
TR201900589T4 (tr) 2019-02-21
BR112014010115A8 (pt) 2017-06-20
PH12014500941A1 (en) 2014-06-30

Similar Documents

Publication Publication Date Title
CN104246967A (zh) 用于提供顺序的功率脉冲的方法
CN103608893B (zh) 用于提供顺序功率脉冲的方法
RU2602571C2 (ru) Высокопроизводительный источник для процесса распыления
US7663319B2 (en) Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
JP2013112830A (ja) イオンボンバードメント装置及びこの装置を用いた基材表面のクリーニング方法
JP2011252193A (ja) イオンボンバードメント装置及びこの装置を用いた基材表面のクリーニング方法
US9881775B2 (en) Waveform for improved energy control of sputtered species
KR20140116102A (ko) 균질의 HiPIMS 코팅 방법
RU2741614C2 (ru) Компоновочная схема и способ ионно-плазменного распыления для оптимизированного распределения потока энергии
EP2422352B1 (en) Rf-plasma glow discharge sputtering
JP3785268B2 (ja) 金属イオン発生装置、金属イオン注入装置及び金属イオン発生方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: Swiss hole

Applicant after: OERLIKON SURFACE SOLUTIONS AG, PFAFFIKON

Address before: Swiss Te Lui Bach

Applicant before: OERLIKON TRADING AG, TRUBBACH

Address after: Swiss Te Lui Bach

Applicant after: OERLIKON TRADING AG, TRuBBACH

Address before: Swiss Te Lui Bach

Applicant before: Oerlikon Trading AG, Trubbach

GR01 Patent grant
GR01 Patent grant