KR101930579B1 - 순차적 전력 펄스를 제공하기 위한 방법 - Google Patents

순차적 전력 펄스를 제공하기 위한 방법 Download PDF

Info

Publication number
KR101930579B1
KR101930579B1 KR1020147014022A KR20147014022A KR101930579B1 KR 101930579 B1 KR101930579 B1 KR 101930579B1 KR 1020147014022 A KR1020147014022 A KR 1020147014022A KR 20147014022 A KR20147014022 A KR 20147014022A KR 101930579 B1 KR101930579 B1 KR 101930579B1
Authority
KR
South Korea
Prior art keywords
power
cathode
generator
interval
partial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147014022A
Other languages
English (en)
Korean (ko)
Other versions
KR20140097214A (ko
Inventor
시그프리드 크라스니트저
다니엘 렌디
마르쿠스 레히트하레르
Original Assignee
오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 filed Critical 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘
Publication of KR20140097214A publication Critical patent/KR20140097214A/ko
Application granted granted Critical
Publication of KR101930579B1 publication Critical patent/KR101930579B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Measuring Volume Flow (AREA)
  • Fluidized-Bed Combustion And Resonant Combustion (AREA)
  • Electrostatic Separation (AREA)
  • Plasma Technology (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
KR1020147014022A 2011-10-28 2012-10-08 순차적 전력 펄스를 제공하기 위한 방법 Active KR101930579B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011117177A DE102011117177A1 (de) 2011-10-28 2011-10-28 Verfahren zur Bereitstellung sequenzieller Leistungspulse
DE102011117177.4 2011-10-28
PCT/EP2012/004203 WO2013060415A1 (de) 2011-10-28 2012-10-08 Verfahren zur bereitstellung sequenzieller leistungspulse

Publications (2)

Publication Number Publication Date
KR20140097214A KR20140097214A (ko) 2014-08-06
KR101930579B1 true KR101930579B1 (ko) 2018-12-18

Family

ID=47177865

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147014022A Active KR101930579B1 (ko) 2011-10-28 2012-10-08 순차적 전력 펄스를 제공하기 위한 방법

Country Status (24)

Country Link
US (1) US9906210B2 (enExample)
EP (1) EP2771901B1 (enExample)
JP (1) JP6236651B2 (enExample)
KR (1) KR101930579B1 (enExample)
CN (1) CN104246967B (enExample)
AR (1) AR088318A1 (enExample)
BR (1) BR112014010115B1 (enExample)
CA (1) CA2853699C (enExample)
DE (1) DE102011117177A1 (enExample)
DK (1) DK2771901T3 (enExample)
ES (1) ES2705974T3 (enExample)
HU (1) HUE043149T2 (enExample)
IN (1) IN2014DN03385A (enExample)
MX (1) MX360116B (enExample)
MY (1) MY175563A (enExample)
PH (1) PH12014500941A1 (enExample)
PL (1) PL2771901T3 (enExample)
PT (1) PT2771901T (enExample)
RU (1) RU2631670C2 (enExample)
SG (1) SG11201401877QA (enExample)
SI (1) SI2771901T1 (enExample)
TR (1) TR201900589T4 (enExample)
TW (1) TWI564415B (enExample)
WO (1) WO2013060415A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011121770A1 (de) 2011-12-21 2013-06-27 Oerlikon Trading Ag, Trübbach Homogenes HIPIMS-Beschichtungsverfahren
MY187100A (en) 2013-07-03 2021-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Tixsi1-xn layers and their production
DE102013011072A1 (de) * 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach Targetpräparation
DE102013011075A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag TiB2 Schichten und ihre Herstellung
DE102013011071A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach TixSi1-xN Schichten mit CryAl1-yN Haftschicht und ihre Herstellung
DE102013011073A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach TlxSi1-xN Schichten und ihre Herstellung
KR102117739B1 (ko) 2016-09-30 2020-06-09 주식회사 엘지화학 음극지지체형 고체산화물 연료전지 제조방법
EP3406751A1 (en) 2017-05-24 2018-11-28 Walter Ag A coated cutting tool and a method for its production
EP3406761A1 (en) 2017-05-24 2018-11-28 Walter Ag A method for producing a coated cutting tool and a coated cutting tool

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7116596B2 (ja) * 2018-05-31 2022-08-10 川崎重工業株式会社 リード線挿入装置およびリード線挿入方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6141766A (ja) * 1984-08-06 1986-02-28 Hitachi Ltd スパツタリング方法およびスパツタ−装置
JPH07116596B2 (ja) * 1989-02-15 1995-12-13 株式会社日立製作所 薄膜形成方法、及びその装置
ES2202439T3 (es) * 1995-04-25 2004-04-01 Von Ardenne Anlagentechnik Gmbh Sistema de pulverizacion que utiliza un magnetron cilindrico rotativo alimentado electricamente utilizando corriente alterna.
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6878242B2 (en) * 2003-04-08 2005-04-12 Guardian Industries Corp. Segmented sputtering target and method/apparatus for using same
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
KR20080071973A (ko) * 2005-10-13 2008-08-05 엔.브이. 베카에르트 에스.에이. 스퍼터링에 의한 코팅 증착법
DE102006017382A1 (de) * 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen
CN101589450B (zh) * 2006-12-12 2013-08-28 Oc欧瑞康巴尔斯公司 生成靶溅射以在衬底上产生涂层的设备和在其上实施电压脉冲的方法
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
WO2009132822A2 (de) 2008-04-28 2009-11-05 Cemecon Ag Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern
JP5037475B2 (ja) * 2008-11-11 2012-09-26 株式会社神戸製鋼所 スパッタ装置
DE202010001497U1 (de) 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
DE102011018363A1 (de) 2011-04-20 2012-10-25 Oerlikon Trading Ag, Trübbach Hochleistungszerstäubungsquelle
DE102011121770A1 (de) * 2011-12-21 2013-06-27 Oerlikon Trading Ag, Trübbach Homogenes HIPIMS-Beschichtungsverfahren

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7116596B2 (ja) * 2018-05-31 2022-08-10 川崎重工業株式会社 リード線挿入装置およびリード線挿入方法

Also Published As

Publication number Publication date
BR112014010115A8 (pt) 2017-06-20
AR088318A1 (es) 2014-05-28
TW201337016A (zh) 2013-09-16
HUE043149T2 (hu) 2019-08-28
PL2771901T3 (pl) 2019-04-30
BR112014010115A2 (pt) 2017-06-13
US20140339917A1 (en) 2014-11-20
JP2015501383A (ja) 2015-01-15
MX360116B (es) 2018-10-23
TR201900589T4 (tr) 2019-02-21
EP2771901A1 (de) 2014-09-03
JP6236651B2 (ja) 2017-11-29
CN104246967A (zh) 2014-12-24
MY175563A (en) 2020-07-01
CA2853699C (en) 2019-08-06
RU2631670C2 (ru) 2017-09-26
PH12014500941A1 (en) 2014-06-30
DE102011117177A1 (de) 2013-05-02
RU2014121388A (ru) 2015-12-10
WO2013060415A1 (de) 2013-05-02
SG11201401877QA (en) 2014-09-26
US9906210B2 (en) 2018-02-27
KR20140097214A (ko) 2014-08-06
BR112014010115B1 (pt) 2021-11-16
SI2771901T1 (sl) 2019-05-31
ES2705974T3 (es) 2019-03-27
MX2014005134A (es) 2014-10-06
DK2771901T3 (en) 2019-02-18
IN2014DN03385A (enExample) 2015-06-05
CN104246967B (zh) 2017-04-19
CA2853699A1 (en) 2013-05-02
TWI564415B (zh) 2017-01-01
PT2771901T (pt) 2019-02-08
EP2771901B1 (de) 2018-12-12

Similar Documents

Publication Publication Date Title
KR101930579B1 (ko) 순차적 전력 펄스를 제공하기 위한 방법
KR101537883B1 (ko) 순차적 전력 펄스를 제공하기 위한 방법
RU2602571C2 (ru) Высокопроизводительный источник для процесса распыления
TWI748401B (zh) 從靶材泵出離子的新型脈動等離子體的電源及使用該電源之磁控濺射系統和空間推進器
EP2422352B1 (en) Rf-plasma glow discharge sputtering
Ozimek et al. HIPIMS Power Supply Requirements: Parameters and Breakthrough Arc Management Solution

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8