CN104241505A - Surface excitation LED lamp - Google Patents

Surface excitation LED lamp Download PDF

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Publication number
CN104241505A
CN104241505A CN201310244449.8A CN201310244449A CN104241505A CN 104241505 A CN104241505 A CN 104241505A CN 201310244449 A CN201310244449 A CN 201310244449A CN 104241505 A CN104241505 A CN 104241505A
Authority
CN
China
Prior art keywords
led
substrate
powder layer
wafer
led wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310244449.8A
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Chinese (zh)
Inventor
李愿
曹宇星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Refond Optoelectronics Co Ltd
Original Assignee
Shenzhen Refond Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Refond Optoelectronics Co Ltd filed Critical Shenzhen Refond Optoelectronics Co Ltd
Priority to CN201310244449.8A priority Critical patent/CN104241505A/en
Publication of CN104241505A publication Critical patent/CN104241505A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

The invention belongs to the field of daily lamps, and provides a surface excitation LED lamp. The surface excitation LED lamp comprises a metal wire, an LED wafer, a fluorescent powder layer, sealing glue and a substrate. The metal wire and the LED wafer are fixed on the substrate, the fluorescent powder layer covers the surface of the LED wafer, and the sealing glue is attached to the fluorescent powder layer and an LED substrate. According to the surface excitation LED lamp, the fluorescent powder layer covers the surface of the LED wafer, the using amount of fluorescent powder is lowered, the product manufacturing cost is lowered, a light spot phenomenon is also avoided, and light emitting is even. Moreover, the sealing glue is directly in contact with the substrate, it is guaranteed that ungluing and excessive glue do not happen between the substrate and the sealing glue, and the service life of the LED lamp is prolonged.

Description

A kind of LED of surface excitation
Technical field
The invention belongs to a kind of daily lamp, be specially a kind of LED of surface excitation.
Background technology
LED(Light Emitting Diode) be the english abbreviation of light-emitting diode, the solid-state semiconductor device of to be a kind of can be by electric energy conversion visible ray, it directly can be converted into light electricity.The heart of LED is the wafer of a semiconductor, and one end of wafer is on one substrate attached, and one end is negative pole, and the other end connects the positive pole of power supply, makes whole wafer by epoxy encapsulation.Semiconductor wafer is made up of two parts, and a part is P type semiconductor, and inside it, occupy an leading position in hole, and the other end is N type semiconductor, at this side mainly electronics.But time these two kinds of semiconductors couple together, between them, just form a P-N junction.When electric current acts on this wafer by wire time, electronics will be pushed to P district, and in P district, electronics is with hole-recombination, then will send energy with the form of photon, the principle of LED luminescence that Here it is.And the wavelength of light i.e. the color of light, be determined by the material forming P-N junction.Initial LED is used as the instruction light source of instrument and meter, and various photochromic LED was widely applied in traffic lights and large-area displays screen afterwards, created good economic benefit and social benefit.
LED has different applications according to the size of size.Daily LED mainly comprises gold thread, phosphor powder layer, LED wafer and substrate, and size is less, is widely used.But the phosphor powder layer of existing daily LED is coated on the whole space of a whole page of LED-baseplate, make LED in packaging technology, fluid sealant contact with fluorescent material instead of directly and LED-baseplate bind, easily cause the phenomenon of the hot spot that comes unstuck, occurs, make LED short for useful life, also result in a large amount of wastes of fluorescent material simultaneously.Specifically, see Fig. 3, phosphor powder layer skewness on LED-baseplate 1a, phosphor powder layer 5a large area covers gold thread 2a, LED wafer 4a and substrate, when encapsulating, covering superincumbent fluid sealant directly can not bind with LED-baseplate, but can only bind on the phosphor powder layer covering LED-baseplate, cause sealing property bad, and easily occur hot spot phenomenon.
Summary of the invention
The present invention is the defect overcoming above-mentioned prior art, provides the LED that a kind of novel surface excites, and its structure is simple, phosphor powder layer area coverage is little, light-out effect and sealing effectiveness good, long service life.
The present invention realizes like this, a kind of LED of surface excitation, comprise metal wire, LED wafer, phosphor powder layer and substrate, described metal wire and LED wafer are fixed on the substrate, described phosphor powder layer covers described LED wafer surface, and the area coverage of described phosphor powder layer is LED wafer surface area.Specifically, described phosphor powder layer only covers LED wafer surface, and can not be coated to other places except LED wafer.During LED sealant sealing, fluid sealant directly contacts with described substrate, closely sticks together, and enhances the bonding strength between fluid sealant and substrate.
Phosphor powder layer is only covered LED wafer surface by the present invention, has both reduced fluorescent material consumption, decreases production cost, turn avoid hot spot phenomenon, makes uniform in light emission.And fluid sealant is directly and substrate contacts, ensure that do not come unstuck between substrate and fluid sealant, do not overflow glue, extends the useful life of LED.
Accompanying drawing explanation
Fig. 1 is the front view of the LED of a kind of surface excitation that the embodiment of the present invention provides;
Fig. 2 is the vertical view of the LED of a kind of surface excitation that the embodiment of the present invention provides.
Fig. 3 is the LED front view also do not encapsulated that prior art provides.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
See Fig. 1 and Fig. 2, the front view of the LED of a kind of surface excitation that the embodiment of the present invention provides and vertical view, comprise metal wire 2, LED wafer 4, phosphor powder layer 5 and substrate 1, described metal wire 2 and LED wafer 4 are fixed on described substrate 1, described phosphor powder layer 5 covers described LED wafer 4 surface, and the area coverage of described phosphor powder layer 5 is LED wafer surface area.Specifically, described phosphor powder layer only covers LED wafer surface, substrate almost do not have fluorescent material, which reduce the area coverage of phosphor powder layer 5, simultaneously, only to cover in LED wafer 4 and to keep certain thickness, achieving good light-out effect, and avoiding common " hot spot " phenomenon that fluorescent material in prior art causes.
Further, described LED also comprises fluid sealant, and described fluid sealant and described substrate directly bind.Compared to existing technology, in prior art, phosphor powder layer covers the whole space of a whole page of substrate substantially, and fluid sealant directly contacts with phosphor powder layer, because centre exists powder, have impact on sealing, and bonding force is not enough, and easily come unstuck excessive glue.In embodiments of the invention, substrate does not almost have phosphor powder layer, fluid sealant and described substrate directly bind, and centre does not exist powder, the bonding strength between fluid sealant and substrate is increased, and ensure that good sealing property.
After coating fluid sealant, the outer surface of described fluid sealant 3 can be arbitrary shape, and preferably in circular arc, because the curve characteristic of circular arc, light LED wafer sent is converged by refraction, and bright dipping is concentrated, and therefore luminous intensity also strengthens.Because fluorescent glue is generally transparence, by the ingehious design of arc-shaped, illumination effect can be strengthened further.
Embodiments of the invention are prepared from by following spraying coating process: fixed L ED substrate; Place the first baffle plate being used for empty avoiding gold thread and wafer, from the effect in spraying hole, it is through hole; On described first baffle plate, place the second baffle being provided with spraying hole, simultaneously the height of described second baffle is higher than the peak of gold thread and wafer.Allow described spraying hole just to LED wafer, the described size and shape in spraying hole and the size and shape of wafer match, and so both protect gold thread and wafer, in turn ensure that spraying effect, according to existing wafer shape, the shape in spraying hole can be circle, square etc.; Finally adjust dust nozzle, allow dust nozzle just spray spraying hole, could be sprayed on wafer accurately like this.Certainly, when gold thread has the part be positioned at above LED wafer, this part of gold thread also can inevitably have a small amount of fluorescent material, but not impact effect.And existing spraying method sprays whole substrate often, because this kind of LED comprises exposed gold thread, whole substrate is sprayed, be conducive to the observation of spraying effect, gold thread also can be avoided to strike the beam.Conveniently can control the uniformity sprayed although it is so, but but cause fluid sealant to contact with the direct of phosphor particles, because there is space between them, so the LED on market is not long for useful life, coming unstuck and excessive glue phenomenon often appears in outward appearance, although and the convenient uniformity that controls of large area coating often can not reach accurate, good effective control.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.

Claims (2)

1. the LED of a surface excitation, comprise metal wire, LED wafer, phosphor powder layer and substrate, described metal wire and LED wafer are fixed on the substrate, it is characterized in that, described phosphor powder layer covers described LED wafer surface, and the area coverage of described phosphor powder layer is LED wafer surface area.
2. the LED of surface excitation as claimed in claim 1, it is characterized in that, described LED also comprises fluid sealant, and described fluid sealant and described substrate directly bind.
CN201310244449.8A 2013-06-19 2013-06-19 Surface excitation LED lamp Pending CN104241505A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310244449.8A CN104241505A (en) 2013-06-19 2013-06-19 Surface excitation LED lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310244449.8A CN104241505A (en) 2013-06-19 2013-06-19 Surface excitation LED lamp

Publications (1)

Publication Number Publication Date
CN104241505A true CN104241505A (en) 2014-12-24

Family

ID=52229227

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310244449.8A Pending CN104241505A (en) 2013-06-19 2013-06-19 Surface excitation LED lamp

Country Status (1)

Country Link
CN (1) CN104241505A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193994A (en) * 2008-02-12 2009-08-27 Citizen Holdings Co Ltd Led light source and chromaticity adjustment method thereof
CN201590432U (en) * 2009-09-30 2010-09-22 红蝶科技(深圳)有限公司 Single-color LED encapsulation structure with high light-emitting rate and projection optical engine using same
CN202067831U (en) * 2011-04-20 2011-12-07 浙江英特来光电科技有限公司 LED white lamp florescent powder layer membrane structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193994A (en) * 2008-02-12 2009-08-27 Citizen Holdings Co Ltd Led light source and chromaticity adjustment method thereof
CN201590432U (en) * 2009-09-30 2010-09-22 红蝶科技(深圳)有限公司 Single-color LED encapsulation structure with high light-emitting rate and projection optical engine using same
CN202067831U (en) * 2011-04-20 2011-12-07 浙江英特来光电科技有限公司 LED white lamp florescent powder layer membrane structure

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Application publication date: 20141224