CN104205227B - 铁电随机存取存储器(fram)布局设备和方法 - Google Patents

铁电随机存取存储器(fram)布局设备和方法 Download PDF

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Publication number
CN104205227B
CN104205227B CN201380018336.4A CN201380018336A CN104205227B CN 104205227 B CN104205227 B CN 104205227B CN 201380018336 A CN201380018336 A CN 201380018336A CN 104205227 B CN104205227 B CN 104205227B
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coupled
bit line
circuit
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CN104205227A (zh
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D·J·托普斯
M·P·克林顿
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Texas Instruments Inc
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Texas Instruments Inc
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN201380018336.4A 2012-03-30 2013-04-01 铁电随机存取存储器(fram)布局设备和方法 Active CN104205227B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/435,718 2012-03-30
US13/435,718 US8756558B2 (en) 2012-03-30 2012-03-30 FRAM compiler and layout
PCT/US2013/034785 WO2013149235A1 (en) 2012-03-30 2013-04-01 Ferroelectric random access memory (fram) layout apparatus and method

Publications (2)

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CN104205227A CN104205227A (zh) 2014-12-10
CN104205227B true CN104205227B (zh) 2018-03-06

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CN201380018336.4A Active CN104205227B (zh) 2012-03-30 2013-04-01 铁电随机存取存储器(fram)布局设备和方法

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US (1) US8756558B2 (enExample)
JP (1) JP6247280B2 (enExample)
CN (1) CN104205227B (enExample)
WO (1) WO2013149235A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10283181B2 (en) 2016-03-01 2019-05-07 Texas Instruments Incorporated Time tracking circuit for FRAM
US9721639B1 (en) * 2016-06-21 2017-08-01 Micron Technology, Inc. Memory cell imprint avoidance
GB2557994B (en) 2016-12-21 2020-01-15 Subsea 7 Ltd Supporting saturation divers underwater using a UUV with ancillary electrical equipment
US10418085B2 (en) * 2017-07-20 2019-09-17 Micron Technology, Inc. Memory plate segmentation to reduce operating power
US11194947B2 (en) * 2017-09-27 2021-12-07 Intel Corporation Systems and methods for region-based error detection and management in integrated circuits
CN116114019A (zh) * 2020-09-22 2023-05-12 株式会社半导体能源研究所 半导体装置及电子设备
CN117980993A (zh) * 2021-11-30 2024-05-03 华为技术有限公司 铁电存储器、数据读取方法及电子设备
CN116312674B (zh) * 2021-12-21 2025-06-27 长鑫存储技术有限公司 存储阵列自动扩展方法、装置、设备及介质
CN118380038B (zh) * 2024-06-21 2024-09-17 晶铁半导体技术(广东)有限公司 一种铁电存储器纠错方法、系统、设备及产品

Citations (4)

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CN1211040A (zh) * 1997-09-08 1999-03-17 三星电子株式会社 具有改善可靠性的铁电随机存取存储器器件
KR20040040852A (ko) * 2002-11-08 2004-05-13 주식회사 하이닉스반도체 강유전체 메모리 장치
JP2004164815A (ja) * 2002-11-08 2004-06-10 Hynix Semiconductor Inc 強誘電体メモリ装置
WO2008029439A1 (fr) * 2006-09-04 2008-03-13 Renesas Technology Corp. Dispositif informatique de support à la conception et compilateur de mémoire

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JPH02264451A (ja) * 1989-04-05 1990-10-29 Mitsubishi Electric Corp フロアプラン設計支援装置
US6809949B2 (en) 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
US7073158B2 (en) * 2002-05-17 2006-07-04 Pixel Velocity, Inc. Automated system for designing and developing field programmable gate arrays
KR100448921B1 (ko) 2002-05-21 2004-09-16 삼성전자주식회사 고속 강유전체 메모리 장치 및 그것의 기입 방법
US7461371B2 (en) 2003-09-11 2008-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. General purpose memory compiler system and associated methods
US6930934B2 (en) 2003-10-28 2005-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. High efficiency redundancy architecture in SRAM compiler
KR100835468B1 (ko) 2006-07-27 2008-06-04 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그 리프레쉬 방법
US7561458B2 (en) 2006-12-26 2009-07-14 Texas Instruments Incorporated Ferroelectric memory array for implementing a zero cancellation scheme to reduce plateline voltage in ferroelectric memory
US8154938B2 (en) 2009-03-06 2012-04-10 Texas Instruments Incorporated Memory array power domain partitioning
US8081500B2 (en) 2009-03-31 2011-12-20 Ramtron International Corporation Method for mitigating imprint in a ferroelectric memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1211040A (zh) * 1997-09-08 1999-03-17 三星电子株式会社 具有改善可靠性的铁电随机存取存储器器件
KR20040040852A (ko) * 2002-11-08 2004-05-13 주식회사 하이닉스반도체 강유전체 메모리 장치
JP2004164815A (ja) * 2002-11-08 2004-06-10 Hynix Semiconductor Inc 強誘電体メモリ装置
WO2008029439A1 (fr) * 2006-09-04 2008-03-13 Renesas Technology Corp. Dispositif informatique de support à la conception et compilateur de mémoire

Also Published As

Publication number Publication date
US20130258751A1 (en) 2013-10-03
WO2013149235A1 (en) 2013-10-03
JP6247280B2 (ja) 2017-12-13
CN104205227A (zh) 2014-12-10
US8756558B2 (en) 2014-06-17
JP2015521336A (ja) 2015-07-27

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