CN104197917A - Piezoelectric driven and detected miniature hemispherical resonant gyroscope and manufacturing method thereof - Google Patents
Piezoelectric driven and detected miniature hemispherical resonant gyroscope and manufacturing method thereof Download PDFInfo
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- CN104197917A CN104197917A CN201410389959.9A CN201410389959A CN104197917A CN 104197917 A CN104197917 A CN 104197917A CN 201410389959 A CN201410389959 A CN 201410389959A CN 104197917 A CN104197917 A CN 104197917A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
- G01C19/5691—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially three-dimensional vibrators, e.g. wine glass-type vibrators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
Abstract
The invention provides a piezoelectric driven and detected miniature hemispherical resonant gyroscope and a manufacturing method thereof. The gyroscope comprises a monocrystalline silicon base, a center-fixed supporting column, a miniature hemispherical resonator, a common electrode, eight film piezoelectrics and eight uniformly-distributed signal electrodes, wherein the monocrystalline silicon base and the miniature hemispherical resonator are connected through the center-fixed supporting column; the common electrode has the same shape as that of the miniature hemispherical resonator and is located between the miniature hemispherical resonator and the piezoelectrics; the piezoelectrics have the same shapes as those of the signal electrodes and are located between the common electrode and the signal electrodes. The miniature hemispherical resonator is excited to work by adopting a piezoelectric driven manner, and a drive mode and a detection mode are matched with each other. The gyroscope is manufactured by combining an MEMS (Micro-Electromechanical Systems) bulk silicon processing process and a surface silicon processing process. According to the piezoelectric driven and detected miniature hemispherical resonant gyroscope and the manufacturing method thereof, the miniature gyroscope is driven and detected by using the inverse piezoelectric effect and the piezoelectric effect, so that the gyroscope has the characteristics of high degree of integration, low power consumption, convenience in mass production, and the like.
Description
Technical field
The present invention relates to the hemispherical resonant gyro of field of micro electromechanical technology, particularly, relate to miniature hemisphere resonant gyroscope instrument of a kind of Piezoelectric Driving and detection and preparation method thereof.
Background technology
Gyroscope is a kind of inertia device that can detect carrier angle or angular velocity, in fields such as attitude control and navigator fixs, has very important effect.Along with science and techniques of defence and Aeronautics and Astronautics industrial expansion, inertial navigation system for gyrostatic requirement also to low cost, small size, high precision, multiaxis detection, high reliability, can adapt to the future development of various rugged surroundings.Therefore, the gyrostatic importance of MEMS is self-evident.Especially, miniature resonant gyroscope, as the gyrostatic important research direction of MEMS, has become a study hotspot in this field.
Hemispherical resonant gyro utilizes hemispherical resonator to detect, and there is no high-speed rotary part, and the stability of material and the symmetry of structure, make it have many outstanding advantages in addition, is the mechanical vibration gyroscope that current precision is the highest.
Literature search through prior art is found, United States Patent (USP) " VIBRATORY ROTATION the SENSOR " (patent No.: 4951508) at length introduced principle and the signal detecting method of hemispherical resonant gyro, the research of hemispherical resonant gyro is had to directive significance.Yet above-mentioned gyro belongs to traditional hemispherical resonant gyro, size is relatively large, has limited its range of application.Miniature hemisphere resonant gyroscope instrument based on MEMS technology has been inherited the advantage of traditional hemispherical resonant gyro, has again the advantages such as volume is little, low in energy consumption, mass production concurrently, has important researching value.Common miniature hemisphere resonant gyroscope instrument all adopts static to drive and capacitance detecting at present, and this driving method need to be made minute sized capacitance gap, and applies the direct current biasing of high amplitude, thereby enough driving forces are provided; This detection method need to be made minute sized capacitance gap to improve accuracy of detection; The sharp gyroscope that drives in this way and detect is vulnerable to the impact of stray capacitance.
Based on this, in the urgent need to proposing a kind of new gyroscope arrangement, make the above-mentioned influence factor of its Avoids or reduces, expand its range of application simultaneously.
Summary of the invention
For defect of the prior art, the object of this invention is to provide miniature hemisphere resonant gyroscope instrument of a kind of Piezoelectric Driving and detection and preparation method thereof, without making minute sized capacitance gap, without the direct current biasing that applies high amplitude, can avoid the impact of stray capacitance simultaneously.
According to an aspect of the present invention, provide the miniature hemisphere resonant gyroscope instrument of a kind of Piezoelectric Driving and detection, comprising:
A monocrystal silicon substrate;
A miniature hemisphere harmonic oscillator;
A center fixed support post of fixing and support miniature hemisphere harmonic oscillator;
A public electrode;
Eight diaphragm type piezoelectrics that are uniformly distributed on public electrode;
Eight are uniformly distributed formula signal electrode;
Wherein, monocrystal silicon substrate is connected by center fixed support post with miniature hemisphere harmonic oscillator; Public electrode is identical with the shape of miniature hemisphere harmonic oscillator, and between miniature hemisphere harmonic oscillator and diaphragm type piezoelectrics; Diaphragm type piezoelectrics are identical with the shape of signal electrode, and between public electrode and signal electrode.
Described gyroscope adopts the mode of Piezoelectric Driving to encourage miniature hemisphere harmonic oscillator to carry out work, and driven-mode and sensed-mode mate mutually.Described gyroscope utilizes inverse piezoelectric effect and piezoelectric effect to carry out driving and the detection of gyroscope, than conventional static, drive and capacitance detecting, without making minute sized capacitance gap, without the direct current biasing that applies high amplitude, can avoid the impact of stray capacitance simultaneously, have integrated degree high, low in energy consumption, be convenient to the features such as mass making.
According to another aspect of the present invention, provide the preparation method of the miniature hemisphere resonant gyroscope instrument of a kind of Piezoelectric Driving and detection, described method comprises the steps:
The first step, monocrystal silicon substrate is cleaned, in monocrystal silicon substrate, carry out gluing, photoetching, development, sputter mask layer, remove photoresist, isotropic etching, removal mask layer, in monocrystal silicon substrate, obtain hemispherical groove;
Second step, on the basis of the first step, utilize thermal oxidation method growth silicon dioxide layer, gluing, photoetching, development, local etching silicon dioxide layer, obtain having the silicon dioxide sacrificial layer of circular groove;
The 3rd step, on the basis of second step, deposit un-doped polysilicon or non-doped diamond, and remove polysilicon or the adamas beyond hemispherical groove by chemically mechanical polishing, obtain the hemispherical dome structure layer with support column;
The 4th step, on the basis of the 3rd step splash-proofing sputtering metal aluminium or metal molybdenum, gluing, photoetching, development, etching, remove metallic aluminium or metal molybdenum beyond hemispherical groove, obtains semisphere public electrode;
The 5th step, on the basis of the 4th step sputter aluminium nitride or pzt thin film, obtain piezoelectric thin film layer;
The 6th step, on the basis of the 5th step splash-proofing sputtering metal aluminium or metal molybdenum, obtain signal electrode layer;
The 7th step, gluing, photoetching, development on the basis of the 6th step, carry out etching to signal electrode layer, obtains the signals layer after graphical and be uniformly distributed formula signal electrode;
The 8th step, on the basis of the 7th step, take signal electrode as mask, piezoelectric thin film layer is carried out to etching, obtain being uniformly distributed formula film piezoelectric;
The 9th step, on the basis of the 8th step, utilize BHF solution to corrode silicon dioxide sacrificial layer, from monocrystal silicon substrate, discharge miniature hemisphere harmonic oscillator.
Compared with prior art, the present invention has following beneficial effect:
(1) described gyroscope is made in conjunction with MEMS Bulk micro machining and surface silicon processing technology, is a kind of processing technology of novelty;
(2) described gyroscope, without making minute sized capacitance gap, without the direct current biasing that applies high amplitude, reduces processing request and energy consumption requirement;
(3) described gyroscope can be avoided the impact of stray capacitance, improves the accuracy detecting.
Accompanying drawing explanation
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Figure (a)-Fig. 1 (i) is the preparation flow figure of the present invention's one preferred embodiment;
Fig. 2 (a), Fig. 2 (b) are tomograph and the vertical view thereof of the present invention's one preferred embodiment;
In figure: 1 is monocrystal silicon substrate, fixed support post centered by 2,3 is miniature hemisphere harmonic oscillator, and 4 is public electrode, and 5 is diaphragm type piezoelectrics, and 6 is signal electrode.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art further to understand the present invention, but not limit in any form the present invention.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some distortion and improvement.These all belong to protection scope of the present invention.
Embodiment 1
As shown in Fig. 2 (a) and Fig. 2 (b), the present embodiment provides the miniature hemisphere resonant gyroscope instrument of a kind of Piezoelectric Driving and detection, comprising:
A monocrystal silicon substrate 1;
Yi Ge center fixed support post 2;
A miniature hemisphere harmonic oscillator 3;
A public electrode 4;
Eight diaphragm type piezoelectrics 5;
Eight are uniformly distributed formula signal electrode 6;
Wherein, monocrystal silicon substrate 1 is connected by center fixed support post 2 with miniature hemisphere harmonic oscillator 3; Public electrode 4 is identical with the shape of miniature hemisphere harmonic oscillator 3, between miniature hemisphere harmonic oscillator 3 and diaphragm type piezoelectrics 5; Diaphragm type piezoelectrics 5 are identical with the shape of signal electrode 6, between public electrode 4 and signal electrode 6.
In the present embodiment, the material of described center fixed support post 2 is un-doped polysilicon or non-doped diamond, for fixing and support miniature hemisphere harmonic oscillator 3.
In the present embodiment, the material of described miniature hemisphere harmonic oscillator 3 is identical with the material of center fixed support post 2, is un-doped polysilicon or non-doped diamond, is the main supporting body of driven-mode and sensed-mode.
In the present embodiment, the material of described public electrode 4 is metallic aluminium or metal molybdenum, for different diaphragm type piezoelectrics 5 provide identical earth signal.
In the present embodiment, the material of described diaphragm type piezoelectrics 5 is aluminium nitride or lead zirconate titanate (PZT), is uniformly distributed on public electrode 4.Described diaphragm type piezoelectrics 5 are divided into and drive piezoelectrics and detect piezoelectrics, and both shapes are identical, spaced apart, and described driving piezoelectrics provide driving force for miniature hemisphere harmonic oscillator 3, and described detection piezoelectrics form detection signals by miniature hemisphere harmonic oscillator 3.
In the present embodiment, the material of described signal electrode 6 is identical with the material of public electrode 4, is metallic aluminium or metal molybdenum.Described signal electrode 6 is divided into drive electrode and detecting electrode, drive electrode is positioned at and drives on piezoelectrics, detecting electrode is positioned at and detects on piezoelectrics, and described drive electrode is for driving piezoelectrics that driving signal is provided, and described detecting electrode extracts detection signal from detecting piezoelectrics.
In the present embodiment, on described drive electrode in the described signal electrode 6 of miniature hemisphere resonant gyroscope instrument, apply driving voltage, on described public electrode 4, apply earth signal, thereby the both sides of the described driving piezoelectrics in described diaphragm type piezoelectrics 5 form electric potential difference, by inverse piezoelectric effect, miniature hemisphere harmonic oscillator 3 is operated under required driven-mode, vibration amplitude and the frequency of driven-mode remain unchanged; When there is additional angular velocity perpendicular to matrix direction, the vibration amplitude of sensed-mode can change, and cause that identical vibration occurs the described detection piezoelectrics in described diaphragm type piezoelectrics 5, the vibration amplitude size of described detection piezoelectrics is directly proportional to the size of additional angular velocity, by piezoelectric effect, detect the size of this vibration amplitude on can the described detecting electrode in described signal electrode 6, can calculate the size of additional angular velocity.
Embodiment 2
As shown in Fig. 1 (a)-Fig. 1 (i), the present embodiment provides the preparation method of the miniature hemisphere resonant gyroscope instrument of a kind of described Piezoelectric Driving and detection, comprises the steps:
The first step, as shown in Fig. 1 (a), monocrystal silicon substrate 1 is cleaned, in monocrystal silicon substrate 1, carry out gluing, photoetching, development, sputter mask layer, remove photoresist, isotropic etching, removal mask layer, in monocrystal silicon substrate 1, obtain the hemispherical groove that radius is 300-700 μ m;
Second step, as shown in Fig. 1 (b), on the basis of the first step, utilize thermal oxidation method growth silicon dioxide layer, gluing, photoetching, development, local etching silicon dioxide layer, obtaining with radius is the silicon dioxide sacrificial layer of 15-40 μ m circular groove;
The 3rd step, as shown in Fig. 1 (c), on the basis of second step, deposit un-doped polysilicon or non-doped diamond, and remove hemispherical groove polysilicon or adamas in addition by chemically mechanical polishing, the thickness obtaining with support column is the hemispherical dome structure layer of 1-5 μ m;
The 4th step, as shown in Fig. 1 (d), splash-proofing sputtering metal aluminium or metal molybdenum on the basis of the 3rd step, gluing, photoetching, development, etching, remove metallic aluminium or metal molybdenum beyond hemispherical groove, obtaining thickness is the semisphere public electrode 4 of 1-5 μ m;
The 5th step, as shown in Fig. 1 (e), sputter aluminium nitride or pzt thin film on the basis of the 4th step, obtain the piezoelectric thin film layer that thickness is 0.5-3.5 μ m;
The 6th step, as shown in Fig. 1 (f), splash-proofing sputtering metal aluminium or metal molybdenum on the basis of the 5th step, obtaining thickness is the signal electrode layer of 0.5-3.5 μ m;
The 7th step, as shown in Fig. 1 (g), gluing, photoetching, development on the basis of the 6th step, carry out etching to signal electrode layer, obtains the signals layer after graphical and be uniformly distributed formula signal electrode 6;
The 8th step, as shown in Fig. 1 (h), on the basis of the 7th step, take signal electrode 6 as mask, piezoelectric thin film layer is carried out to etching, obtain being uniformly distributed diaphragm type piezoelectrics 5;
The 9th step, as shown in Fig. 1 (i), on the basis of the 8th step, utilize BHF solution to corrode silicon dioxide sacrificial layer, from monocrystal silicon substrate 1, discharge miniature hemisphere harmonic oscillator 3.
Gyroscope described in the present embodiment adopts the mode of Piezoelectric Driving to encourage miniature hemisphere harmonic oscillator 3 to carry out work, and its driven-mode and sensed-mode mate respectively mutually.
Embodiment 3
Basic identical with embodiment 1 and embodiment 2, difference is:
Gyroscope prepared by the present embodiment: the material of described center fixed support post 2 and described miniature hemisphere harmonic oscillator 3 is doped polycrystalline silicon or doped diamond, can be simultaneously as miniature hemisphere harmonic oscillator 3 and public electrode 4, without the extra public electrode 4 of making;
So the 3rd step in the present embodiment preparation method: dopant deposition polysilicon or doped diamond on the basis of second step; The 4th step in preparation method described in removal embodiment 2, directly carries out the 5th step to the nine steps.Other operations are identical with embodiment 2.
Gyroscope in the present invention is made in conjunction with MEMS Bulk micro machining and surface silicon processing technology, is a kind of processing technology of novelty.
The present invention utilizes inverse piezoelectric effect and piezoelectric effect to carry out driving and the detection of gyroscope, than conventional static, drive and capacitance detecting, without making minute sized capacitance gap, without the direct current biasing that applies high amplitude, can reduce processing request and energy consumption requirement;
Gyroscope in the present invention can be avoided the impact of stray capacitance, improves the accuracy detecting.
Above specific embodiments of the invention are described.It will be appreciated that, the present invention is not limited to above-mentioned specific implementations, and those skilled in the art can make various distortion or modification within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (13)
1. a miniature hemisphere resonant gyroscope instrument for Piezoelectric Driving and detection, is characterized in that, comprising:
A monocrystal silicon substrate;
A miniature hemisphere harmonic oscillator;
A center fixed support post of fixing and support miniature hemisphere harmonic oscillator;
A public electrode;
Eight diaphragm type piezoelectrics that are uniformly distributed on public electrode;
Eight are uniformly distributed formula signal electrode;
Wherein, monocrystal silicon substrate is connected by center fixed support post with miniature hemisphere harmonic oscillator; Public electrode is identical with the shape of miniature hemisphere harmonic oscillator, and between miniature hemisphere harmonic oscillator and diaphragm type piezoelectrics; Diaphragm type piezoelectrics are identical with the shape of signal electrode, and between public electrode and signal electrode.
2. the miniature hemisphere resonant gyroscope instrument of Piezoelectric Driving according to claim 1 and detection, is characterized in that, the material of described center fixed support post and/or described miniature hemisphere harmonic oscillator is un-doped polysilicon or non-doped diamond.
3. the miniature hemisphere resonant gyroscope instrument of Piezoelectric Driving according to claim 1 and detection, it is characterized in that, described diaphragm type piezoelectrics are divided into driving piezoelectrics and detect piezoelectrics, both shapes are identical, spaced apart, wherein: described driving piezoelectrics provide driving force for miniature hemisphere harmonic oscillator, described detection piezoelectrics form detection signal by miniature hemisphere harmonic oscillator.
4. the miniature hemisphere resonant gyroscope instrument of Piezoelectric Driving according to claim 3 and detection, is characterized in that, described public electrode provides identical earth signal for different diaphragm type piezoelectrics; Described signal electrode is divided into drive electrode and detecting electrode, and described drive electrode is positioned at and drives on piezoelectrics and for driving piezoelectrics that driving signal is provided; Described detecting electrode is positioned to detect on piezoelectrics and from detecting piezoelectrics and extracts detection signal.
5. according to the miniature hemisphere resonant gyroscope instrument of the Piezoelectric Driving described in claim 1-4 any one and detection, it is characterized in that, the material of described diaphragm type piezoelectrics is aluminium nitride or lead zirconate titanate; The material of described public electrode and described signal electrode is metallic aluminium or metal molybdenum.
6. according to a preparation method for the miniature hemisphere resonant gyroscope instrument of the Piezoelectric Driving described in claim 1-5 any one and detection, it is characterized in that, described method comprises the steps:
The first step, monocrystal silicon substrate is cleaned, in monocrystal silicon substrate, carry out gluing, photoetching, development, sputter mask layer, remove photoresist, isotropic etching, removal mask layer, in monocrystal silicon substrate, obtain hemispherical groove;
Second step, on the basis of the first step, utilize thermal oxidation method growth silicon dioxide layer, gluing, photoetching, development, local etching silicon dioxide layer, obtain having the silicon dioxide sacrificial layer of circular groove;
The 3rd step, on the basis of second step, deposit un-doped polysilicon or non-doped diamond, and remove polysilicon or the adamas beyond hemispherical groove by chemically mechanical polishing, obtain the hemispherical dome structure layer with support column;
The 4th step, on the basis of the 3rd step splash-proofing sputtering metal aluminium or metal molybdenum, gluing, photoetching, development, etching, remove metallic aluminium or metal molybdenum beyond hemispherical groove, obtains semisphere public electrode;
The 5th step, on the basis of the 4th step sputter aluminium nitride or pzt thin film, obtain piezoelectric thin film layer;
The 6th step, on the basis of the 5th step splash-proofing sputtering metal aluminium or metal molybdenum, obtain signal electrode layer;
The 7th step, gluing, photoetching, development on the basis of the 6th step, carry out etching to signal electrode layer, obtains the signals layer after graphical and be uniformly distributed formula signal electrode;
The 8th step, on the basis of the 7th step, take signal electrode as mask, piezoelectric thin film layer is carried out to etching, obtain being uniformly distributed formula film piezoelectric;
The 9th step, on the basis of the 8th step, utilize BHF solution to corrode silicon dioxide sacrificial layer, from monocrystal silicon substrate, discharge miniature hemisphere harmonic oscillator.
7. the preparation method of the miniature hemisphere resonant gyroscope instrument of Piezoelectric Driving according to claim 6 and detection, is characterized in that, in the first step, the radius of the described hemispherical groove obtaining in monocrystal silicon substrate is 300-700 μ m.
8. the preparation method of the miniature hemisphere resonant gyroscope instrument of Piezoelectric Driving according to claim 6 and detection, is characterized in that, in second step, the radius of the described circular groove obtaining in silicon dioxide sacrificial layer is 15-40 μ m.
9. the preparation method of the miniature hemisphere resonant gyroscope instrument of Piezoelectric Driving according to claim 6 and detection, is characterized in that, in the 3rd step, with the thickness of the described hemispherical dome structure layer of support column, is 1-5 μ m.
10. the preparation method of the miniature hemisphere resonant gyroscope instrument of Piezoelectric Driving according to claim 6 and detection, is characterized in that, in the 4th step, the thickness of described semisphere public electrode is 0.5-3.5 μ m.
The preparation method of the miniature hemisphere resonant gyroscope instrument of 11. Piezoelectric Driving according to claim 6 and detection, is characterized in that, in the 5th step, the thickness of described piezoelectric thin film layer is 0.5-3.5 μ m.
The preparation method of the miniature hemisphere resonant gyroscope instrument of 12. Piezoelectric Driving according to claim 6 and detection, is characterized in that, in the 6th step, the thickness of described signal electrode layer is 0.5-3.5 μ m.
13. according to the preparation method of the miniature hemisphere resonant gyroscope instrument of the Piezoelectric Driving described in claim 6-12 any one and detection, it is characterized in that, the material of described center fixed support post and described miniature hemisphere harmonic oscillator is doped polycrystalline silicon or doped diamond, can be simultaneously as miniature hemisphere harmonic oscillator and public electrode, without the extra public electrode of making; Now the 3rd step dopant deposition polysilicon or doped diamond on the basis of second step, omits the 4th step.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104457724A (en) * | 2014-12-25 | 2015-03-25 | 中国电子科技集团公司第二十六研究所 | Hemispherical resonant gyro reading base structure with high reliability and preparation method |
| CN104897146A (en) * | 2015-05-29 | 2015-09-09 | 上海交通大学 | Out-plane piezoelectric type hemispheric micro-gyroscope and preparation method thereof |
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| US11874112B1 (en) | 2022-10-04 | 2024-01-16 | Enertia Microsystems Inc. | Vibratory gyroscopes with resonator attachments |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951508A (en) * | 1983-10-31 | 1990-08-28 | General Motors Corporation | Vibratory rotation sensor |
| CN101236082A (en) * | 2007-01-09 | 2008-08-06 | 索尼株式会社 | Vibration gyro sensor, control circuit, and electronic apparatus |
| CN101308022A (en) * | 2007-05-16 | 2008-11-19 | 索尼株式会社 | Detection apparatus, detection method, and electronic apparatus |
| CN101476888A (en) * | 2009-02-05 | 2009-07-08 | 上海交通大学 | Inverse magnetic suspension vibrating micro-gyroscope |
| CN102506841A (en) * | 2010-05-30 | 2012-06-20 | 霍尼韦尔国际公司 | Hemitoroidal resonator gyroscope |
| CN103115616A (en) * | 2013-01-21 | 2013-05-22 | 西北工业大学 | Micro hemispherical resonator gyro and preparation method thereof |
| CN103344229A (en) * | 2013-07-05 | 2013-10-09 | 西北工业大学 | Miniature hemispherical resonant gyroscope based on SOI (Silicon on Insulator) silicon slice and manufacturing method of miniature hemispherical resonant gyroscope |
| CN103528576A (en) * | 2012-07-05 | 2014-01-22 | 苏州文智芯微系统技术有限公司 | Hemispherical resonance micro mechanical gyroscope and processing technology thereof |
| CN103688136A (en) * | 2011-08-01 | 2014-03-26 | 株式会社村田制作所 | Oscillator and oscillating gyroscope |
-
2014
- 2014-08-08 CN CN201410389959.9A patent/CN104197917B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951508A (en) * | 1983-10-31 | 1990-08-28 | General Motors Corporation | Vibratory rotation sensor |
| CN101236082A (en) * | 2007-01-09 | 2008-08-06 | 索尼株式会社 | Vibration gyro sensor, control circuit, and electronic apparatus |
| CN101308022A (en) * | 2007-05-16 | 2008-11-19 | 索尼株式会社 | Detection apparatus, detection method, and electronic apparatus |
| CN101476888A (en) * | 2009-02-05 | 2009-07-08 | 上海交通大学 | Inverse magnetic suspension vibrating micro-gyroscope |
| CN102506841A (en) * | 2010-05-30 | 2012-06-20 | 霍尼韦尔国际公司 | Hemitoroidal resonator gyroscope |
| CN103688136A (en) * | 2011-08-01 | 2014-03-26 | 株式会社村田制作所 | Oscillator and oscillating gyroscope |
| CN103528576A (en) * | 2012-07-05 | 2014-01-22 | 苏州文智芯微系统技术有限公司 | Hemispherical resonance micro mechanical gyroscope and processing technology thereof |
| CN103115616A (en) * | 2013-01-21 | 2013-05-22 | 西北工业大学 | Micro hemispherical resonator gyro and preparation method thereof |
| CN103344229A (en) * | 2013-07-05 | 2013-10-09 | 西北工业大学 | Miniature hemispherical resonant gyroscope based on SOI (Silicon on Insulator) silicon slice and manufacturing method of miniature hemispherical resonant gyroscope |
Non-Patent Citations (2)
| Title |
|---|
| 崔峰等: "《静电悬浮转子微陀螺及其关键技术 》", 《中国惯性技术学报》 * |
| 张霞: "《振动式微机械陀螺仪的研究现状与展望》", 《固体电子学研究与进展》 * |
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