CN104197917B - A kind of Piezoelectric Driving and the micro hemispherical resonator gyro instrument of detection and preparation method thereof - Google Patents
A kind of Piezoelectric Driving and the micro hemispherical resonator gyro instrument of detection and preparation method thereof Download PDFInfo
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- CN104197917B CN104197917B CN201410389959.9A CN201410389959A CN104197917B CN 104197917 B CN104197917 B CN 104197917B CN 201410389959 A CN201410389959 A CN 201410389959A CN 104197917 B CN104197917 B CN 104197917B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
- G01C19/5691—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially three-dimensional vibrators, e.g. wine glass-type vibrators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
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Abstract
The invention provides a kind of Piezoelectric Driving and the micro hemispherical resonator gyro instrument of detection and preparation method thereof, including a monocrystal silicon substrate, center fix support column, miniature hemisphere harmonic oscillator, public electrode, eight film piezoelectrics, eight be uniformly distributed formula signal electrode, wherein：Monocrystal silicon substrate is fixed support column by center with miniature hemisphere harmonic oscillator and is connected；Public electrode is identical with the shape of miniature hemisphere, between miniature hemisphere harmonic oscillator and piezoelectrics；Piezoelectrics are identical with the shape of signal electrode, between public electrode and signal electrode.The present invention encourages miniature hemisphere harmonic oscillator to be operated by the way of Piezoelectric Driving, and driven-mode and sensed-mode are mutually matched.The present invention combines MEMS Bulk micro machinings and surface silicon process technology is made.The present invention using inverse piezoelectric effect and piezo-electric effect progress gyroscope driving and detection, with integrated degree it is high, low in energy consumption, be easy to the features such as mass makes.
Description
Technical field
The present invention relates to the hemispherical resonant gyro of field of micro electromechanical technology, in particular it relates to a kind of Piezoelectric Driving and inspection
Micro hemispherical resonator gyro instrument of survey and preparation method thereof.
Background technology
Gyroscope be it is a kind of can detect the inertia device of carrier angle or angular speed, in gesture stability and navigator fix etc.
There is very important effect in field.With science and techniques of defence and Aeronautics and Astronautics industrial expansion, inertial navigation system is for gyro
The requirement of instrument is also to low cost, small size, high accuracy, many shaft detections, high reliability, the direction hair for adapting to various adverse circumstances
Exhibition.Therefore, the importance of MEMS gyroscope is self-evident.Especially, miniature resonant gyroscope is used as one of MEMS gyroscope
Important research direction, has become a study hotspot in the field.
Hemispherical resonant gyro detected using hemispherical resonator, the stabilization without high-speed rotary part, in addition material
The symmetry of property and structure, makes it have the advantage of many protrusions, is current precision highest mechanical oscillation gyroscope.
Literature search discovery by prior art, United States Patent (USP) " VIBRATORY ROTATION SENSOR " (patents
Number：4951508) principle and signal detecting method of hemispherical resonant gyro are described in detail, to hemispherical resonant gyro
Research has directive significance.However, above-mentioned gyro belongs to traditional hemispherical resonant gyro, and it is relatively large sized, limit
Its application.Micro hemispherical resonator gyro instrument based on MEMS technology inherits the advantage of traditional hemispherical resonant gyro,
The advantage such as small volume, low in energy consumption, mass production is had concurrently again, with important researching value.Miniature hemisphere common at present is humorous
The gyroscope that shakes uses electrostatic drive and capacitance detecting, and this driving method needs to make the capacitance gap of microsize, and applies
Increase the direct current biasing of amplitude, so as to provide enough driving forces；This detection method is needed between the electric capacity of making microsize
Gap is to improve accuracy of detection；The gyroscope that profit drives and detected in this way is vulnerable to the influence of parasitic capacitance.
Based on this, in the urgent need to proposing a kind of new gyroscope arrangement, avoid it or reduce above-mentioned influence factor, simultaneously
Extend its application.
The content of the invention
For defect of the prior art, it is an object of the invention to provide the miniature hemisphere of a kind of Piezoelectric Driving and detection is humorous
Shake gyroscope and preparation method thereof, the capacitance gap without making microsize, the direct current biasing without applying amplitude, simultaneously
The influence of parasitic capacitance can be avoided.
According to an aspect of the present invention there is provided a kind of Piezoelectric Driving and the micro hemispherical resonator gyro instrument of detection, including：
One monocrystal silicon substrate；
One miniature hemisphere harmonic oscillator；
One fixation simultaneously supports the center of miniature hemisphere harmonic oscillator to fix support column；
One public electrode；
Eight diaphragm type piezoelectrics for being uniformly distributed on public electrode；
Eight are uniformly distributed formula signal electrode；
Wherein, monocrystal silicon substrate is fixed support column by center with miniature hemisphere harmonic oscillator and is connected；Public electrode with it is miniature
The shape of hemispherical resonator is identical, and positioned between miniature hemisphere harmonic oscillator and diaphragm type piezoelectrics；Diaphragm type piezoelectrics and letter
The shape of number electrode is identical, and positioned between public electrode and signal electrode.
The gyroscope encourages miniature hemisphere harmonic oscillator to be operated by the way of Piezoelectric Driving, driven-mode and detection
Mode is mutually matched.The gyroscope carries out the driving and detection of gyroscope using inverse piezoelectric effect and piezo-electric effect, compares
In conventional electrostatic drive and capacitance detecting, the capacitance gap without making microsize, the direct current without applying amplitude is inclined
Put, while the influence of parasitic capacitance can be avoided, with integrated degree it is high, low in energy consumption, be easy to the features such as mass makes.
There is provided a kind of Piezoelectric Driving and the system of the micro hemispherical resonator gyro instrument of detection according to another aspect of the present invention
Preparation Method, methods described comprises the following steps：
The first step, monocrystal silicon substrate is cleaned, gluing, photoetching, development, sputtering mask are carried out in monocrystal silicon substrate
Layer, remove photoresist, isotropic etching, remove mask layer, hemispherical groove is obtained in monocrystal silicon substrate；
Second step, on the basis of the first step using thermal oxidation method grow silicon dioxide layer, gluing, photoetching, development, part
Etching silicon dioxide layer, obtains the silicon dioxide sacrificial layer with circular groove；
3rd step, deposition un-doped polysilicon or undoped diamond on the basis of second step, and pass through chemical machinery
Polishing removes the polysilicon or diamond beyond hemispherical groove, obtains the hemispherical dome structure layer with support column；
4th step, splash-proofing sputtering metal aluminium or metal molybdenum on the basis of the 3rd step, gluing, photoetching, development, etching remove half
Metallic aluminium or metal molybdenum beyond ball recess, obtain hemispherical public electrode；
5th step, sputtering aluminium nitride or pzt thin film on the basis of the 4th step, obtain piezoelectric thin film layer；
6th step, splash-proofing sputtering metal aluminium or metal molybdenum on the basis of the 5th step, obtain signal electrode layer；
7th step, gluing, photoetching, development on the basis of the 6th step, are performed etching to signal electrode layer, obtain graphical
Rear signal electrode layer and it is uniformly distributed formula signal electrode；
8th step, on the basis of the 7th step using signal electrode as mask, piezoelectric thin film layer is performed etching, obtains uniform
Distributed thin film formula piezoelectrics；
9th step, using BHF solution silicon dioxide sacrificial layer is corroded on the basis of the 8th step, from monocrystalline silicon substrate
Miniature hemisphere harmonic oscillator is discharged on bottom.
Compared with prior art, the present invention has following beneficial effect：
(1) the gyroscope combination MEMS Bulk micro machinings and surface silicon process technology are made, and are a kind of
Novel processing technology；
(2) gyroscope need not make the capacitance gap of microsize, the direct current biasing without applying amplitude, reduction
Processing request and horsepower requirements；
(3) gyroscope can avoid the influence of parasitic capacitance, improve the accuracy of detection.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, further feature of the invention,
Objects and advantages will become more apparent upon：
Fig. 1 (a)-Fig. 1 (i) is the preparation flow figure of a preferred embodiment of the invention；
Fig. 2 (a), Fig. 2 (b) are the tomograph and its top view of a preferred embodiment of the invention；
In figure：1 is that support column is fixed centered on monocrystal silicon substrate, 2, and 3 be miniature hemisphere harmonic oscillator, and 4 be public electrode, 5
It is signal electrode for diaphragm type piezoelectrics, 6.
Embodiment
With reference to specific embodiment, the present invention is described in detail.Following examples will be helpful to the technology of this area
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that to the ordinary skill of this area
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection domain.
Embodiment 1
As shown in Fig. 2 (a) and Fig. 2 (b), the present embodiment provides the micro hemispherical resonator gyro of a kind of Piezoelectric Driving and detection
Instrument, including：
One monocrystal silicon substrate 1；
Support column 2 is fixed at one center；
One miniature hemisphere harmonic oscillator 3；
One public electrode 4；
Eight diaphragm type piezoelectrics 5；
Eight are uniformly distributed formula signal electrode 6；
Wherein, monocrystal silicon substrate 1 is fixed support column 2 by center with miniature hemisphere harmonic oscillator 3 and is connected；Public electrode 4 with
The shape of miniature hemisphere harmonic oscillator 3 is identical, between miniature hemisphere harmonic oscillator 3 and diaphragm type piezoelectrics 5；Diaphragm type piezoelectrics
5 is identical with the shape of signal electrode 6, between public electrode 4 and signal electrode 6.
In the present embodiment, the material that support column 2 is fixed at the center is un-doped polysilicon or undoped diamond, is used for
Fix and support miniature hemisphere harmonic oscillator 3.
In the present embodiment, the material of the miniature hemisphere harmonic oscillator 3 is identical with the material that support column 2 is fixed at center, is non-
DOPOS doped polycrystalline silicon or undoped diamond, are the main supporting bodies of driven-mode and sensed-mode.
In the present embodiment, the material of the public electrode 4 is metallic aluminium or metal molybdenum, is that different diaphragm type piezoelectrics 5 are carried
For identical earth signal.
In the present embodiment, the material of the diaphragm type piezoelectrics 5 is aluminium nitride or lead zirconate titanate (PZT), is uniformly distributed in
On public electrode 4.5 points of the diaphragm type piezoelectrics are driving piezoelectrics and detection piezoelectrics, and both shapes are identical, interval point
Cloth, the driving piezoelectrics are that miniature hemisphere harmonic oscillator 3 provides driving force, and the detection piezoelectrics pass through miniature hemisphere harmonic oscillator
3 form detection signal.
In the present embodiment, the material of the signal electrode 6 is identical with the material of public electrode 4, is metallic aluminium or metal molybdenum.
6 points of the signal electrode is driving electrodes and detecting electrode, and driving electrodes are located on driving piezoelectrics, and detecting electrode is located at detection
On piezoelectrics, the driving electrodes provide drive signal for driving piezoelectrics, and the detecting electrode extracts inspection from detection piezoelectrics
Survey signal.
In the present embodiment, apply in the driving electrodes in the signal electrode 6 of micro hemispherical resonator gyro instrument
Driving voltage, earth signal is applied on the public electrode 4, so that the driving piezoelectricity in the diaphragm type piezoelectrics 5
The both sides of body form electrical potential difference, miniature hemisphere harmonic oscillator 3 is operated under required driven-mode by inverse piezoelectric effect, driving
The vibration amplitude and frequency of mode keep constant；When there is additional angular speed perpendicular to matrix direction, the vibration of sensed-mode
Amplitude can change, and cause the detection piezoelectrics in the diaphragm type piezoelectrics 5 to occur identical vibration, the inspection
The vibration amplitude size for surveying piezoelectrics is directly proportional to the size of additional angular speed, can be in the signal electrode by piezo-electric effect
The size of the vibration amplitude is detected on the detecting electrode in 6, you can calculate the size for obtaining additional angular speed.
Embodiment 2
As shown in Fig. 1 (a)-Fig. 1 (i), the present embodiment provides the miniature hemisphere resonance of a kind of Piezoelectric Driving and detection
The preparation method of gyroscope, comprises the following steps：
Shown in the first step, such as Fig. 1 (a), monocrystal silicon substrate 1 is cleaned, gluing, light are carried out in monocrystal silicon substrate 1
Carve, development, sputtering mask layer, remove photoresist, isotropic etching, remove mask layer, radius is obtained in monocrystal silicon substrate 1 for 300-
700 μm of hemispherical groove；
Shown in second step, such as Fig. 1 (b), using thermal oxidation method growth silicon dioxide layer on the basis of the first step, gluing,
Photoetching, development, local etching silicon dioxide layer, are obtained with the silicon dioxide sacrificial layer that radius is 15-40 μm of circular groove；
Shown in 3rd step, such as Fig. 1 (c), un-doped polysilicon or undoped diamond are deposited on the basis of second step, and
By chemically-mechanicapolish polishing polysilicon or diamond beyond removal hemispherical groove, it is 1-5 μ to obtain the thickness with support column
M hemispherical dome structure layer；
Shown in 4th step, such as Fig. 1 (d), splash-proofing sputtering metal aluminium or metal molybdenum on the basis of the 3rd step are gluing, photoetching, aobvious
Shadow, etching, remove the metallic aluminium or metal molybdenum beyond hemispherical groove, obtain the hemispherical public electrode 4 that thickness is 1-5 μm；
Shown in 5th step, such as Fig. 1 (e), aluminium nitride or pzt thin film are sputtered on the basis of the 4th step, obtaining thickness is
0.5-3.5 μm of piezoelectric thin film layer；
Shown in 6th step, such as Fig. 1 (f), splash-proofing sputtering metal aluminium or metal molybdenum on the basis of the 5th step obtain thickness for 0.5-
3.5 μm of signal electrode layer；
Shown in 7th step, such as Fig. 1 (g), gluing, photoetching, development on the basis of the 6th step are carved to signal electrode layer
Erosion, obtain it is graphical after signal electrode layer and be uniformly distributed formula signal electrode 6；
Shown in 8th step, such as Fig. 1 (h), piezoelectric thin film layer is entered for mask with signal electrode 6 on the basis of the 7th step
Row etching, is evenly distributed diaphragm type piezoelectrics 5；
Shown in 9th step, such as Fig. 1 (i), corruption is carried out to silicon dioxide sacrificial layer using BHF solution on the basis of the 8th step
Erosion, discharges miniature hemisphere harmonic oscillator 3 from monocrystal silicon substrate 1.
Gyroscope described in the present embodiment encourages miniature hemisphere harmonic oscillator 3 to be operated by the way of Piezoelectric Driving, its
Driven-mode and sensed-mode are mutually matched respectively.
Embodiment 3
It is essentially identical with embodiment 1 and embodiment 2, except that：
Gyroscope manufactured in the present embodiment：Support column 2 and the material of described miniature hemisphere harmonic oscillator 3 are fixed in described center
Expect for DOPOS doped polycrystalline silicon or doped diamond, the miniature hemisphere harmonic oscillator 3 is used as miniature hemisphere harmonic oscillator 3 and common electrical simultaneously
Pole 4, public electrode 4 is made without extra；
So the 3rd step in the present embodiment preparation method：Depositing doped polysilicon or doping gold on the basis of second step
Hard rock；The 4th step in the preparation method described in embodiment 2 is removed, the 5th step to the 9th step is directly carried out.Other are operated and real
Apply example 2 identical.
Gyroscope combination MEMS Bulk micro machinings and surface silicon process technology in the present invention are made, and are a kind of new
The processing technology of grain husk.
The present invention using inverse piezoelectric effect and piezo-electric effect progress gyroscope driving and detection, it is quiet compared to conventional
Electric drive and capacitance detecting, the capacitance gap without making microsize, the direct current biasing without applying amplitude, it is possible to decrease plus
Work requirement and horsepower requirements；
Gyroscope in the present invention can avoid the influence of parasitic capacitance, improve the accuracy of detection.
The specific embodiment of the present invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring the substantive content of the present invention.
Claims (11)
1. the preparation method of a kind of Piezoelectric Driving and the micro hemispherical resonator gyro instrument of detection, it is characterised in that
The Piezoelectric Driving and the micro hemispherical resonator gyro instrument of detection, including：
One monocrystal silicon substrate；
One miniature hemisphere harmonic oscillator；
One fixation simultaneously supports the center of miniature hemisphere harmonic oscillator to fix support column；
One public electrode；
Eight diaphragm type piezoelectrics for being uniformly distributed on public electrode；
Eight are uniformly distributed formula signal electrode；
Wherein, monocrystal silicon substrate is fixed support column by center with miniature hemisphere harmonic oscillator and is connected；Public electrode and miniature hemisphere
The shape of harmonic oscillator is identical, and positioned between miniature hemisphere harmonic oscillator and diaphragm type piezoelectrics；Diaphragm type piezoelectrics and signal electricity
The shape of pole is identical, and positioned between public electrode and signal electrode；
Methods described comprises the following steps：
The first step, monocrystal silicon substrate is cleaned, carried out in monocrystal silicon substrate gluing, photoetching, development, sputtering mask layer,
Remove photoresist, isotropic etching, remove mask layer, hemispherical groove is obtained in monocrystal silicon substrate；
Second step, on the basis of the first step using thermal oxidation method grow silicon dioxide layer, gluing, photoetching, development, local etching
Silicon dioxide layer, obtains the silicon dioxide sacrificial layer with circular groove；
3rd step, deposition un-doped polysilicon or undoped diamond on the basis of second step, and pass through chemically mechanical polishing
The polysilicon or diamond beyond hemispherical groove are removed, the hemispherical dome structure layer with support column is obtained；
4th step, splash-proofing sputtering metal aluminium or metal molybdenum on the basis of the 3rd step, gluing, photoetching, development, etching remove hemispherical
Metallic aluminium or metal molybdenum beyond groove, obtain hemispherical public electrode；
5th step, sputtering aluminium nitride or pzt thin film on the basis of the 4th step, obtain piezoelectric thin film layer；
6th step, splash-proofing sputtering metal aluminium or metal molybdenum on the basis of the 5th step, obtain signal electrode layer；
7th step, gluing, photoetching, development on the basis of the 6th step, are performed etching to signal electrode layer, after obtaining graphically
Signal electrode layer and it is uniformly distributed formula signal electrode；
8th step, on the basis of the 7th step using signal electrode as mask, piezoelectric thin film layer is performed etching, is evenly distributed
Formula diaphragm type piezoelectrics；
9th step, using BHF solution silicon dioxide sacrificial layer is corroded on the basis of the 8th step, from monocrystal silicon substrate
Discharge miniature hemisphere harmonic oscillator.
2. the preparation method of Piezoelectric Driving according to claim 1 and the micro hemispherical resonator gyro instrument of detection, its feature
It is, in the first step, the radius of the hemispherical groove obtained in monocrystal silicon substrate is 300-700 μm.
3. the preparation method of Piezoelectric Driving according to claim 1 and the micro hemispherical resonator gyro instrument of detection, its feature
It is, in second step, the radius of the circular groove obtained in silicon dioxide sacrificial layer is 15-40 μm.
4. the preparation method of Piezoelectric Driving according to claim 1 and the micro hemispherical resonator gyro instrument of detection, its feature
It is, in the 3rd step, the thickness of the hemispherical dome structure layer with support column is 1-5 μm.
5. the preparation method of Piezoelectric Driving according to claim 1 and the micro hemispherical resonator gyro instrument of detection, its feature
It is, in the 4th step, the thickness of the hemispherical public electrode is 0.5-3.5 μm.
6. the preparation method of Piezoelectric Driving according to claim 1 and the micro hemispherical resonator gyro instrument of detection, its feature
It is, in the 5th step, the thickness of the piezoelectric thin film layer is 0.5-3.5 μm.
7. the preparation method of Piezoelectric Driving according to claim 1 and the micro hemispherical resonator gyro instrument of detection, its feature
It is, in the 6th step, the thickness of the signal electrode layer is 0.5-3.5 μm.
8. the preparation side of the micro hemispherical resonator gyro instrument of Piezoelectric Driving and detection according to claim any one of 1-7
Method, it is characterised in that described center fix the material of support column and described miniature hemisphere harmonic oscillator for DOPOS doped polycrystalline silicon or
Doped diamond, the miniature hemisphere harmonic oscillator as miniature hemisphere harmonic oscillator and public electrode, makes public without extra simultaneously
Common electrode；Now the 3rd step depositing doped polysilicon or doped diamond on the basis of second step, omits the 4th step.
9. the preparation side of the micro hemispherical resonator gyro instrument of Piezoelectric Driving and detection according to claim any one of 1-7
Method, it is characterised in that the diaphragm type piezoelectrics are divided into driving piezoelectrics and detection piezoelectrics, both shapes are identical, interval point
Cloth, wherein：The driving piezoelectrics provide driving force for miniature hemisphere harmonic oscillator, and the detection piezoelectrics are humorous by miniature hemisphere
Oscillator formation detection signal.
10. the preparation side of the micro hemispherical resonator gyro instrument of Piezoelectric Driving and detection according to claim any one of 1-7
Method, it is characterised in that the extremely different diaphragm type piezoelectrics of common electrical provide identical earth signal；The signal electrode is divided into
Driving electrodes and detecting electrode, the driving electrodes are located on driving piezoelectrics and provide drive signal for driving piezoelectrics；Institute
Detecting electrode is stated to be located on detection piezoelectrics and extract detection signal from detection piezoelectrics.
11. the preparation side of the micro hemispherical resonator gyro instrument of Piezoelectric Driving and detection according to claim any one of 1-7
Method, it is characterised in that the material of the diaphragm type piezoelectrics is aluminium nitride or lead zirconate titanate；The public electrode and the signal
The material of electrode is metallic aluminium or metal molybdenum.
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| CN107389050B (en) * | 2017-07-04 | 2020-07-31 | 东南大学 | Micro-hemispherical resonator gyroscope with accurately controlled inner and outer electrode gaps and processing method thereof |
| CN108502843B (en) * | 2018-03-28 | 2019-07-19 | 中北大学 | A kind of silicon micro-cup shape resonant gyroscope processing method based on polycrystalline silicon growth method |
| CN112161617B (en) * | 2020-10-09 | 2024-01-19 | 中国电子科技集团公司第二十六研究所 | Axisymmetric resonator |
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