CN105387852A - Preparing method for micro hemisphere gyro harmonic oscillators through self-alignment technology - Google Patents
Preparing method for micro hemisphere gyro harmonic oscillators through self-alignment technology Download PDFInfo
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- CN105387852A CN105387852A CN201510671505.5A CN201510671505A CN105387852A CN 105387852 A CN105387852 A CN 105387852A CN 201510671505 A CN201510671505 A CN 201510671505A CN 105387852 A CN105387852 A CN 105387852A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
- G01C19/5691—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially three-dimensional vibrators, e.g. wine glass-type vibrators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00198—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
Abstract
The invention relates to a preparing method for micro hemisphere gyro harmonic oscillators through the self-alignment technology. The preparing method specifically comprises the steps that a silicon wafer etched with an annular groove and a circular groove serves as a silicon substrate, patterns needing to be prepared and wires are formed on glass slices through a metal sputtering method, the glass slices form a hollow spherical shell and a hollow annular shell through the property that glass can be easily blown in the melt state, the parts, without sputtered metal, of the hollow shells are etched away through a glass etching method, and finally the umbrella-like and Y-like micro hemisphere gyro harmonic oscillators, detection electrodes and exciting electrodes are formed, wherein the detection electrodes and the exciting electrodes are approximately parallel to the micro hemisphere gyro harmonic oscillators. The harmonic oscillators are smooth in surface and symmetric completely, metal on the glass is used as masks, the laser cutting technology is omitted, and precision is improved while cost is reduced. The harmonic oscillating frequency, quality factors and other parameters of the harmonic oscillators are better; meanwhile, the prepared detection electrodes and the prepared exciting electrodes can be parallel to the harmonic oscillators better, and technological steps are reduced.
Description
Technical field
The invention belongs to micromachining technology field, particularly the micro-half spherical top harmonic oscillator of a kind of method preparation and fabrication of corrosion, specifically a kind of self-aligned technology preparation method of micro-half spherical top harmonic oscillator.
Background technology
The mankind continue for more than 50 years to the research of hemispherical reso nance gyroscope.Hemispherical reso nance gyroscope, as a kind of device of novel inertial posture measuring unit, has very high measuring accuracy, superpower stability and reliability, is usually used in the equipments such as spacecraft, satellite, strategic arms.Develop the Delco company of the thing U.S. (being incorporated to NorthropGrumman company afterwards) of hemispherical reso nance gyroscope in the world the earliest, since nineteen ninety-six, after hemispherical resonant gyro is used in space by first, hemispherical reso nance gyroscope (HRG) becomes " preferred sensor " of high value task.Muscovite HRG is on gyrostatic design, signal transacting and system, and its theory is all quite leading.HRG Russia draws instrument manufacturing design bureau of Minsk to develop the hemispherical reso nance gyroscope that diameter is 90mm in early days, develops again the hemispherical reso nance gyroscope that diameter is 50mm.It is the hemispherical reso nance gyroscope of 30mm that Russia SIEMedicon studies diameter.In the long run, following gyroscope technology will be main to microminiaturized future development with HRG and MEMS (micro electro mechanical system) (MEMS) to hemispherical resonant gyro technology, and as the first-selected gyro of space mission and guidance system.
In recent years, along with the development of micro-processing technology, it is less that human use's MEMS technology has also produced volume, and quality is lighter, and cost is lower, is easy to the hemispherical reso nance gyroscope produced in batches.The hemispherical reso nance gyroscope of the harmonic oscillator 20mm that France researches and develops now, NorthropGrumman company of the U.S. was proposed micro hemispherical resonator gyro instrument in 2012, and started the research of superminiature hemispherical resonant gyro.The hemispherical resonant gyro that MEMS technology manufactures is just in develop rapidly, and the core of hemispherical resonant gyro is half spherical top harmonic oscillator, how when ensureing gyroscope quality, the harmonic oscillator preparing more reasonable structure by MEMS technology becomes present problems faced.For this reason, it is material with quartz that the A.M.Shkel etc. in California, USA university Irving branch school gives a kind of in article " TITANIASILICATE/FUSEDQUARTZGLASSBLOWINGFOR3-DFABRICATION OFLOWINTERNALLOSSWINEGLASSMICRO-STRUCTURES ", to utilize under high temperature quartz in molten condition easily by the characteristic blown afloat, produce half spherical top harmonic oscillator, and give and utilize the method for Lasercut half spherical top harmonic oscillator to be separated with silicon face.The advantage of this preparation method is that under passing through high temperature, fused quartz can be blown afloat uniformly under the effect of pressure differential, and surface roughness is very outstanding, but weak point is first to utilize Lasercut to need first to be aimed at half spherical top harmonic oscillator edge by laser instrument, this is just very high to the accuracy requirement of aiming at, if do not aim at cutting, the symmetry of half spherical top does not just ensure, directly can have influence on measuring accuracy and the life-span of hemispherical reso nance gyroscope like this; Secondly, the edge of model utilizing Lasercut to cut out is irregular, and this also can cause the symmetry of hemispherical resonator.
In addition, after prepared by the harmonic oscillator of micro hemispherical resonator gyro, also need to prepare detecting electrode and exciting electrode, how to allow the distance of each detecting electrode, exciting electrode isotonic oscillator equal, and isotonic oscillator is parallel as far as possible becomes the next problem needing to solve.For this reason, SergeiA.Zotov, AlexanderA.Trusov and AndreiM.Shkel gives a kind of harmonic oscillator preparation method of spherical structure in article " Three-DimensionalSphericalShellResonatorGyroscopeFabrica tedUsingWafer-ScaleGlassblowing ", proposes preparation method exciting electrode and detecting electrode isotonic oscillator simultaneously blown afloat in article.Owing to preparing harmonic oscillator and electrode under the same conditions, so their shape size should be all identical.This method considerably increases the symmetry of harmonic oscillator and electrode, but it also has weak point, and first because the harmonic oscillator of blowout is close to empty spherical shell, and the harmonic oscillator of umbellate form, Y type has higher quality factor q relative to the harmonic oscillator of other shapes; Secondly, because exciting electrode and detecting electrode are all approximate spheres, the distance between they and harmonic oscillator is uneven.This two problems is influential to gyrostatic precision.
Summary of the invention
The object of the invention is to overcome above-mentioned problems of the prior art, and a kind of self-aligned technology preparation method of micro-half spherical top harmonic oscillator is provided.The half spherical top harmonic oscillator that the method prepares, combine " umbellate form " of harmonic oscillator, the high precision of " Y type " structure, exciting electrode and detecting electrode and harmonic oscillator connects subparallel feature, be expected to start new direction in superminiature half spherical top harmonic oscillator technology of preparing.
The present invention is achieved through the following technical solutions:
A self-aligned technology preparation method for the micro-half spherical top harmonic oscillator of umbellate form, comprises the steps:
1) select circular silicon chip as substrate and clean silicon substrate, and spin coating photoresist on the surface on a silicon substrate, photoetching forms follow-up dark silicon etching process the first mask used;
2) adopt dark silicon etching process and by the first mask on a silicon substrate surface etch formed circular groove structure, circular groove structure and center column structure, then remaining photoresist is removed: wherein, the periphery that circular groove structure is close to circular silicon chip is offered, circular groove structure is opened within circular groove structure, centered cylinder body structure is positioned at the center of circular groove structure, annular groove, circular groove and center column are positioned on same axis, and the height of the groove depth of annular groove, the groove depth of circular groove and center column is equal;
3) clean the silicon substrate after glass sheet and photoetching, glass sheet to be placed on silicon substrate upper surface and to carry out silicon on glass bonding, annular groove and form the cavity of sealing between circular groove and glass sheet respectively;
4) glass sheet good for bonding is carried out glass surface thinning, grinding and polishing, be thinned to 80-90 μm;
5) sputter layers of chrome, layers of copper and layer gold (layers of chrome, layers of copper and layer gold form the metal level on glass sheet jointly) successively in thinning glass sheet surface, alignment mark is protected simultaneously; Wherein, layers of chrome thickness is 50 nanometers, copper layer thickness is 600 nanometers, layer gold thickness is 400 nanometers;
6) spin coating photoresist on the surface of metal level, photoetching forms subsequent ion bundle etching technics the second mask used;
7) adopt ion beam etch process and etch formation circular metal synusia and some electrode metal synusia on the metal layer by the second mask, then removing residue photoresist; Wherein, circular metal synusia is positioned at the middle part of glass sheet and covers completely on the circular groove of silicon substrate, some electrode metal synusia be distributed in the periphery rim of glass sheet and each electrode metal synusia across the notch of the annular groove of its corresponding position;
8) sample is put into quick anneal oven and carry out pyroprocessing, temperature is risen to the softening point of glass, annular groove cavity on silicon substrate and the gas in circular groove cavity can expand under the effect of external and internal pressure difference, thus the glass sheet that circular groove covers and circular metal synusia are blown out approximate empty ball shape, the glass sheet that annular groove covers and some electrode metal synusia are blown out the shape of approximate arched door;
9) to the HF damping fluid corrosion of the sample of gained, the glass sheet not being covered, typically with metal layers covering is eroded, finally obtain the micro-half spherical top harmonic oscillator of umbellate form and detecting electrode thereof and exciting electrode.
A self-aligned technology preparation method for the micro-half spherical top harmonic oscillator of Y type, comprises the steps:
1) select circular silicon chip as substrate and clean silicon substrate, and spin coating photoresist on the surface on a silicon substrate, photoetching forms follow-up dark silicon etching process the 3rd mask used;
2) adopt dark silicon etching process and by the 3rd mask on a silicon substrate surface etch form circular groove structure and circular groove structure, then remaining photoresist is removed: wherein, the periphery that circular groove structure is close to circular silicon chip is offered, circular groove structure is opened within circular groove structure, annular groove and circular groove are positioned on same axis, and the groove depth of annular groove and circular groove is equal;
3) clean the silicon substrate after glass sheet and photoetching, glass sheet to be placed on silicon substrate upper surface and to carry out silicon on glass bonding, annular groove and form the cavity of sealing between circular groove and glass sheet respectively;
4) glass sheet good for bonding is carried out glass surface thinning, grinding and polishing, be thinned to 80-90 μm;
5) sputter layers of chrome, layers of copper and layer gold successively in thinning glass sheet surface, alignment mark is protected simultaneously; Wherein, layers of chrome thickness is 50 nanometers, copper layer thickness is 600 nanometers, layer gold thickness is 400 nanometers;
6) spin coating photoresist on the surface of metal level, photoetching forms subsequent ion bundle etching technics the 4th mask used;
7) adopt ion beam etch process and etch formation circular ring metal synusia and some electrode metal synusia on the metal layer by the 4th mask, then removing residue photoresist; Wherein, circular ring metal synusia be positioned at the middle part of glass sheet and to cover completely on the circular groove of silicon substrate, namely the external diameter of circular ring metal synusia be greater than the internal diameter of annular groove, some electrode metal synusia be distributed in the periphery rim of glass sheet and each electrode metal synusia across the notch of the annular groove of its corresponding position;
8) sample is put into quick anneal oven and carry out pyroprocessing, temperature is risen to the softening point of glass, annular groove cavity on silicon substrate and the gas in circular groove cavity can expand under the effect of external and internal pressure difference, thus the glass sheet that circular groove covers and circular metal synusia are blown out approximate empty ball shape, the glass sheet that annular groove covers and some electrode metal synusia are blown out the shape of approximate arched door;
9) to the HF damping fluid corrosion of the sample of gained, the glass sheet not being covered, typically with metal layers covering is eroded, finally obtain the micro-half spherical top harmonic oscillator of umbellate form and detecting electrode thereof and exciting electrode.
The present invention is the method utilizing splash-proofing sputtering metal on glass flake, form figure and the wire of required preparation, utilize high temperature lower-glass in molten condition easily by the characteristic blown afloat, it is made to form empty spherical shell and empty annular casing, by the method for etching glass, make not have the ghost part sputtering upper metal to be corroded, finally form class " umbellate form ", " Y type " half spherical top harmonic oscillator and detecting electrode approximately parallel with it and exciting electrode.
The invention provides a kind of self-aligned technology preparation method of half spherical top harmonic oscillator, utilize the ductility of patterned metallic film on melten glass, shape paired electrode on the glass blown afloat, metallic film is corroded not by plated region as mask, prepares harmonic oscillator, exciting electrode and detecting electrode simultaneously.Compared with prior art, there is following advantage: 1) adopt pressure differential to prepare harmonic oscillator, the smooth surface of harmonic oscillator and full symmetric; 2) utilize the metal on glass to do mask, eliminate laser cutting technique, reduce cost and improve precision simultaneously; 3) class " umbellate form " formed, " Y type " half parameter such as resonance frequency, quality factor of spherical top harmonic oscillator are more outstanding; 4) exciting electrode simultaneously prepared and detecting electrode more perfectly can be parallel to harmonic oscillator, and decrease processing step.
Accompanying drawing explanation
Fig. 1 is the structural representation of the micro-half spherical top harmonic oscillator of umbellate form of the present invention.
Fig. 2 is the process sequence diagram of the self-aligned technology preparation method of the micro-half spherical top harmonic oscillator of umbellate form of the present invention.
Fig. 3 is the structural representation of the micro-half spherical top harmonic oscillator of Y type of the present invention.
Fig. 4 is the process sequence diagram of the self-aligned technology preparation method of the micro-half spherical top harmonic oscillator of Y type of the present invention.
In figure: 1-silicon substrate, 2-annular groove, 3-circular groove, 4-center column, 5-glass sheet, 6-metal level, 7-circular metal synusia, 8-electrode metal synusia, 9-circular ring metal synusia.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
A self-aligned technology preparation method for the micro-half spherical top harmonic oscillator of umbellate form, comprises the steps:
1) select circular silicon chip as substrate and clean silicon substrate 1, and on silicon substrate 1 upper surface spin coating photoresist, photoetching forms follow-up dark silicon etching process the first mask used, as shown in a in Fig. 2;
2) adopt dark silicon etching process and form annular groove 2 structure by the first mask in silicon substrate 1 upper surface etching, circular groove 3 structure and center column 4 structure, then remaining photoresist is removed: wherein, the periphery that annular groove 2 structure is close to circular silicon chip is offered, circular groove 3 structure is opened within annular groove 2 structure, central cylinder 4 structure is positioned at the center of circular groove 3 structure, annular groove 2, circular groove 3 and center column 4 are positioned on same axis, the groove depth of annular groove 2, the groove depth of circular groove 3 and the height of center column 4 equal, as shown in the b in Fig. 2,
3) clean the silicon substrate 1 after glass sheet 5 and photoetching, glass sheet 5 to be placed on silicon substrate 1 upper surface and to carry out silicon on glass bonding, annular groove 2 and form the cavity of sealing between circular groove 3 and glass sheet 5 respectively, as shown in the c in Fig. 2;
4) glass sheet 5 good for bonding is carried out glass surface thinning, grinding and polishing, be thinned to 80-90 μm;
5) sputter layers of chrome, layers of copper and layer gold successively on thinning glass sheet 5 surface, alignment mark is protected simultaneously; Wherein, layers of chrome thickness is 50 nanometers, copper layer thickness is 600 nanometers, layer gold thickness is 400 nanometers, as shown in the d in Fig. 2;
6) spin coating photoresist on the surface of metal level 6, photoetching forms subsequent ion bundle etching technics the second mask used;
7) adopt ion beam etch process and on metal level 6, etch formation circular metal synusia 7 and some electrode metal synusia 8 by the second mask, then removing residue photoresist; Wherein, circular metal synusia 7 is positioned at the middle part of glass sheet 5 and covers on the circular groove 3 of silicon substrate 1 completely, some electrode metal synusia 8 be distributed in the periphery rim of glass sheet 5 and each electrode metal synusia 8 across the notch of the annular groove 2 of its corresponding position, the shape of each electrode metal synusia 8 is a part for annular, its central angle is 15 °, as shown in the e in Fig. 2;
8) sample is put into quick anneal oven and carry out pyroprocessing, temperature is risen to the softening point of glass, gas in annular groove 2 cavity on silicon substrate 1 and circular groove 3 cavity can expand under the effect of external and internal pressure difference, thus the glass sheet 5 that circular groove 3 covers and circular metal synusia 7 are blown out approximate empty ball shape, the glass sheet 5 that annular groove 2 covers and some electrode metal synusia 8 are blown out the shape of approximate arched door, as shown in the f in Fig. 2;
9) to the HF damping fluid corrosion of the sample of gained, the glass sheet not being covered, typically with metal layers 6 coverings is eroded, finally obtain the micro-half spherical top harmonic oscillator of umbellate form and detecting electrode thereof and exciting electrode, as shown in g, the h in Fig. 1 and Fig. 2.
A self-aligned technology preparation method for the micro-half spherical top harmonic oscillator of Y type, comprises the steps:
1) select circular silicon chip as substrate and clean silicon substrate 1, and on silicon substrate 1 upper surface spin coating photoresist, photoetching forms follow-up dark silicon etching process the 3rd mask used, as shown in a in Fig. 4;
2) adopt dark silicon etching process and form annular groove 2 structure and circular groove 3 structure by the 3rd mask in silicon substrate 1 upper surface etching, then remaining photoresist is removed: wherein, the periphery that annular groove 2 structure is close to circular silicon chip is offered, circular groove 3 structure is opened within annular groove 2 structure, annular groove 2 and circular groove 3 are positioned on same axis, the groove depth of annular groove 2 and circular groove 3 is equal, as shown in the b in Fig. 4;
3) clean the silicon substrate 1 after glass sheet 5 and photoetching, glass sheet 5 to be placed on silicon substrate 1 upper surface and to carry out silicon on glass bonding, annular groove 2 and form the cavity of sealing between circular groove 3 and glass sheet 5 respectively, as shown in the c in Fig. 4;
4) glass sheet 5 good for bonding is carried out glass surface thinning, grinding and polishing, be thinned to 80-90 μm;
5) sputter layers of chrome, layers of copper and layer gold successively on thinning glass sheet 5 surface, alignment mark is protected simultaneously; Wherein, layers of chrome thickness is 50 nanometers, copper layer thickness is 600 nanometers, layer gold thickness is 400 nanometers, as shown in the d in Fig. 4;
6) spin coating photoresist on the surface of metal level 6, photoetching forms subsequent ion bundle etching technics the 4th mask used;
7) adopt ion beam etch process and on metal level 6, etch formation circular ring metal synusia 9 and some electrode metal synusia 8 by the 4th mask, then removing residue photoresist; Wherein, circular ring metal synusia 9 is positioned at the middle part of glass sheet 5 and covers on the circular groove 3 of silicon substrate 1 completely, some electrode metal synusia 8 be distributed in the periphery rim of glass sheet 5 and each electrode metal synusia 8 across the notch of the annular groove 2 of its corresponding position, the shape of each electrode metal synusia 8 is a part for annular, its central angle is 15 °, as shown in the e in Fig. 4;
8) sample is put into quick anneal oven and carry out pyroprocessing, temperature is risen to the softening point of glass, gas in annular groove 2 cavity on silicon substrate 1 and circular groove 3 cavity can expand under the effect of external and internal pressure difference, thus the glass sheet 5 that circular groove 3 covers and circular ring metal synusia 9 are blown out approximate empty ball shape, the glass sheet 5 that annular groove 2 covers and some electrode metal synusia 8 are blown out the shape of approximate arched door, as shown in the f in Fig. 4;
9) to the HF damping fluid corrosion of the sample of gained, the glass sheet 5 not being covered, typically with metal layers 6 coverings is eroded, finally obtain the micro-half spherical top harmonic oscillator of umbellate form and detecting electrode thereof and exciting electrode, as shown in g, the h in Fig. 3 and Fig. 4.
Claims (2)
1. a self-aligned technology preparation method for the micro-half spherical top harmonic oscillator of umbellate form, is characterized in that, comprise the steps:
1) select circular silicon chip as substrate and clean silicon substrate (1), and on silicon substrate (1) upper surface spin coating photoresist, photoetching forms follow-up dark silicon etching process the first mask used;
2) adopt dark silicon etching process and form annular groove (2) structure by the first mask in silicon substrate (1) upper surface etching, circular groove (3) structure and center column (4) structure, then remaining photoresist is removed: wherein, the periphery that annular groove (2) structure is close to circular silicon chip is offered, circular groove (3) structure is opened within annular groove (2) structure, central cylinder (4) structure is positioned at the center of circular groove (3) structure, annular groove (2), circular groove (3) and center column (4) are positioned on same axis, the groove depth of annular groove (2), the groove depth of circular groove (3) and the height of center column (4) equal,
3) clean the silicon substrate (1) after glass sheet (5) and photoetching, glass sheet (5) to be placed on silicon substrate (1) upper surface and to carry out silicon on glass bonding, annular groove (2) and form the cavity of sealing between circular groove (3) and glass sheet (5) respectively;
4) glass sheet (5) good for bonding is carried out glass surface thinning, grinding and polishing, be thinned to 80-90 μm;
5) sputter layers of chrome, layers of copper and layer gold successively on thinning glass sheet (5) surface, alignment mark is protected simultaneously; Wherein, layers of chrome thickness is 50 nanometers, copper layer thickness is 600 nanometers, layer gold thickness is 400 nanometers;
6) spin coating photoresist on the surface of metal level (6), photoetching forms subsequent ion bundle etching technics the second mask used;
7) adopt ion beam etch process and form circular metal synusia (7) and some electrode metal synusia (8) by the second mask in the upper etching of metal level (6), then removing residue photoresist; Wherein, circular metal synusia (7) is positioned at the middle part of glass sheet (5) and covers on the circular groove (3) of silicon substrate (1) completely, some electrode metal synusia (8) be distributed in the periphery rim of glass sheet (5) and each electrode metal synusia (8) across the notch of the annular groove (2) of its corresponding position;
8) sample is put into quick anneal oven and carry out pyroprocessing, temperature is risen to the softening point of glass, annular groove (2) cavity on silicon substrate (1) and the gas in circular groove (3) cavity can expand under the effect of external and internal pressure difference, thus the glass sheet (5) of upper for circular groove (3) covering and circular metal synusia (7) are blown out approximate empty ball shape, the glass sheet (5) of upper for annular groove (2) covering and some electrode metal synusia (8) are blown out the shape being similar to arched door;
9) to the HF damping fluid corrosion of the sample of gained, eroding not being covered, typically with metal layers the glass sheet that (6) cover, finally obtaining the micro-half spherical top harmonic oscillator of umbellate form and detecting electrode thereof and exciting electrode.
2. a self-aligned technology preparation method for the micro-half spherical top harmonic oscillator of Y type, is characterized in that, comprise the steps:
1) select circular silicon chip as substrate and clean silicon substrate (1), and on silicon substrate (1) upper surface spin coating photoresist, photoetching forms follow-up dark silicon etching process the 3rd mask used;
2) adopt dark silicon etching process and form annular groove (2) structure and circular groove (3) structure by the 3rd mask in silicon substrate (1) upper surface etching, then remaining photoresist is removed: wherein, the periphery that annular groove (2) structure is close to circular silicon chip is offered, circular groove (3) structure is opened within annular groove (2) structure, annular groove (2) and circular groove (3) are positioned on same axis, and the groove depth of annular groove (2) and circular groove (3) is equal;
3) clean the silicon substrate (1) after glass sheet (5) and photoetching, glass sheet (5) to be placed on silicon substrate (1) upper surface and to carry out silicon on glass bonding, annular groove (2) and form the cavity of sealing between circular groove (3) and glass sheet (5) respectively;
4) glass sheet (5) good for bonding is carried out glass surface thinning, grinding and polishing, be thinned to 80-90 μm;
5) sputter layers of chrome, layers of copper and layer gold successively on thinning glass sheet (5) surface, alignment mark is protected simultaneously; Wherein, layers of chrome thickness is 50 nanometers, copper layer thickness is 600 nanometers, layer gold thickness is 400 nanometers;
6) spin coating photoresist on the surface of metal level (6), photoetching forms subsequent ion bundle etching technics the 4th mask used;
7) adopt ion beam etch process and form circular ring metal synusia (9) and some electrode metal synusia (8) by the 4th mask in the upper etching of metal level (6), then removing residue photoresist; Wherein, circular ring metal synusia (9) is positioned at the middle part of glass sheet (5) and covers on the circular groove (3) of silicon substrate (1) completely, some electrode metal synusia (8) be distributed in the periphery rim of glass sheet (5) and each electrode metal synusia (8) across the notch of the annular groove (2) of its corresponding position;
8) sample is put into quick anneal oven and carry out pyroprocessing, temperature is risen to the softening point of glass, annular groove (2) cavity on silicon substrate (1) and the gas in circular groove (3) cavity can expand under the effect of external and internal pressure difference, thus the glass sheet (5) of upper for circular groove (3) covering and circular ring metal synusia (9) are blown out approximate empty ball shape, the glass sheet (5) of upper for annular groove (2) covering and some electrode metal synusia (8) are blown out the shape being similar to arched door;
9) to the HF damping fluid corrosion of the sample of gained, eroding not being covered, typically with metal layers the glass sheet (5) that (6) cover, finally obtaining the micro-half spherical top harmonic oscillator of umbellate form and detecting electrode thereof and exciting electrode.
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| CN113514082A (en) * | 2021-07-14 | 2021-10-19 | 中国人民解放军国防科技大学 | Assembly fixture, assembly system and assembly method for micro-hemispherical resonant gyroscope structure |
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