CN104195556A - Wet-method nickel etching solution - Google Patents
Wet-method nickel etching solution Download PDFInfo
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- CN104195556A CN104195556A CN201410474471.6A CN201410474471A CN104195556A CN 104195556 A CN104195556 A CN 104195556A CN 201410474471 A CN201410474471 A CN 201410474471A CN 104195556 A CN104195556 A CN 104195556A
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Abstract
The invention discloses a wet-method nickel etching solution in the manufacturing process of a film circuit substrate. The wet-method nickel etching solution comprises ferric trichloride, weak acid, a peroxide accelerant and deionized water. By adopting the nickel etching solution disclosed by the invention, the corrosion to the nickel etching side is less, and the solution has no etching action for a film ceramic substrate, an LTCC (Low Temperature Co-Fired Ceramic) substrate, a quartz substrate, a silicon substrate and the like, and almost has no influence on a titanium-tungsten film layer, a gold film layer and the like.
Description
Technical field
The present invention relates to the metallic diaphragm wet etching field in film circuit board manufacture, particularly a kind of wet method is carved nickel solution.
Background technology
Thin film circuit, owing to having the features such as high surface resistivity, low resistance temperature coefficient and high circuit stability, is particularly suitable for the high-speed high frequency circuit that reliability requirement is high.Along with the communication technology is to high frequencyization development, film circuit board is as the key part in signal equipment, and the application in microwave product is more and more extensive.
In order to improve the ability of the resistance to Sn/Au eutectic of film circuit board and the welding of resistance to slicker solder, metal conduction band often adopts titanium tungsten/nickel/golden membranous layer system.In thin film circuit manufacturing processed, the titanium tungsten beyond metal conduction band, nickel, the normal method that adopts wet etching of gold are removed.Existing wet method carves nickel solution or side corrosion is larger, or base material or titanium tungsten and golden membranous layer etc. are had to impact in various degree.
Summary of the invention
The object of the present invention is to provide a kind of side corrosion less, base material, titanium tungsten and golden membranous layer are almost carved to nickel solution without the wet method of impact.
The object of the present invention is achieved like this, and a kind of wet method is carved nickel solution, it is characterized in that comprising by weight percentage: iron trichloride 2%～8%, weak acid 5%～15%, peroxide accelerator 1%～5%, surplus is deionized water.
As to further improvement of the present invention, iron trichloride 3%～5%, weak acid 7%～12%, peroxide accelerator 1%～4%, surplus is deionized water.
Wherein, described weak acid is acetic acid or citric acid.
Wherein, described peroxide accelerator is Peracetic Acid or hydrogen peroxide.
The present invention compared with prior art obtained beneficial effect is:
Existing wet method is carved nickel solution and is mostly contained strong acid, and side corrosion is generally larger.And the nickel solution at quarter having has impact in various degree to quartz substrate, LTCC base material, titanium tungsten film layer, golden membranous layer etc.The wet method that can not meet titanium tungsten/nickel/golden membranous layer system on the material of different bases is carved nickel specification of quality.The present invention changes weak acid into the hydrochloric acid in iron trichloride and hydrochloric acid solution system, adds appropriate peroxide accelerator simultaneously, and the problems referred to above are effectively solved.Compared with prior art, the beneficial effect of obtaining is:
1, carving nickel side corrodes less;
2, solution to thin-film ceramics substrate, ltcc substrate, quartz base plate and silicon substrate without etching phenomenon;
3, solution on titanium tungsten film layer, golden membranous layer etc. almost without impact.
Embodiment
A kind of wet method of the present invention is carved nickel solution, it is characterized in that comprising by weight percentage: iron trichloride 2%～10%, weak acid 5%～15%, peroxide accelerator 1%～5%, surplus is deionized water.
Embodiment 1, carve nickel solution 1. by the formulated of weight percent iron trichloride 2%, acetic acid 5%, Peracetic Acid 5%: take 2.3g iron trichloride and put into quartz curette; Take 100g deionized water and add in quartz curette, stirred solution dissolves iron trichloride completely; Add 5.7g acetic acid and stir; Add 5.7g Peracetic Acid and stir.
In the test piece of spattering nickel thickness 1 μ m, process photoetching offset plate figure in advance, and the width of photoresist material lines is measured.Test piece is put into and carved nickel solution 1., after nickel dam etching beyond the photoresist material is clean, take out test piece, washing also dries up with nitrogen; Remove photoresist material, the width of nickel wire bar is measured, and calculated side etching extent.For the nickel dam of thickness 1 μ m, side corrosion≤1.2 μ m.
Embodiment 2, carve nickel solution 2. by the formulated of weight percent iron trichloride 3%, acetic acid 8%, hydrogen peroxide 2%: take 3.5g iron trichloride and put into quartz curette; Take 100g deionized water and add in quartz curette, stirred solution dissolves iron trichloride completely; Add 9.2g acetic acid and stir; Add 2.3g hydrogen peroxide and stir.
In the test piece of spattering nickel thickness 1 μ m, process photoetching offset plate figure in advance, and the width of photoresist material lines is measured.Test piece is put into and carved nickel solution 2., after nickel dam etching beyond the photoresist material is clean, take out test piece, washing also dries up with nitrogen; Remove photoresist material, the width of nickel wire bar is measured, and calculated side etching extent.For the nickel dam of thickness 1 μ m, side corrosion≤0.7 μ m.
Embodiment 3, carve nickel solution 3. by the formulated of weight percent iron trichloride 8%, acetic acid 15%, hydrogen peroxide 1%: take 10.5g iron trichloride and put into quartz curette; Take 100g deionized water and add in quartz curette, stirred solution dissolves iron trichloride completely; Add 20g acetic acid and stir; Add 1.5g hydrogen peroxide and stir.
In the test piece of spattering nickel thickness 1 μ m, process photoetching offset plate figure in advance, and the width of photoresist material lines is measured.Test piece is put into and carved nickel solution 3., after nickel dam etching beyond the photoresist material is clean, take out test piece, washing also dries up with nitrogen; Remove photoresist material, the width of nickel wire bar is measured, and calculated side etching extent.For the nickel dam of thickness 1 μ m, side corrosion≤1.37 μ m.
Embodiment 4, carve nickel solution 4. by the formulated of weight percent iron trichloride 7.8%, citric acid 14.8%, hydrogen peroxide 3.7%: take 10g iron trichloride and put into quartz curette; Take 100g deionized water and add in quartz curette, stirred solution dissolves iron trichloride completely; Add 20g citric acid and stir; Add 1.5g hydrogen peroxide and stir.
In the test piece of spattering nickel thickness 1 μ m, process photoetching offset plate figure in advance, and the width of photoresist material lines is measured.Test piece is put into and carved nickel solution 4., after nickel dam etching beyond the photoresist material is clean, take out test piece, washing also dries up with nitrogen; Remove photoresist material, the width of nickel wire bar is measured, and calculated side etching extent.For the nickel dam of thickness 1 μ m, side corrosion≤1.5 μ m.
Embodiment 5, carve nickel solution 5. by the formulated of weight percent iron trichloride 4%, citric acid 12%, Peracetic Acid 2.4%: take 5g iron trichloride and put into quartz curette; Take 100g deionized water and add in quartz curette, stirred solution dissolves iron trichloride completely; Add 15g citric acid and stir; Add 3g Peracetic Acid and stir.
In the test piece of spattering nickel thickness 1 μ m, process photoetching offset plate figure in advance, and the width of photoresist material lines is measured.Test piece is put into and carved nickel solution 5., after nickel dam etching beyond the photoresist material is clean, take out test piece, washing also dries up with nitrogen; Remove photoresist material, the width of nickel wire bar is measured, and calculated side etching extent.For the nickel dam of thickness 1 μ m, side corrosion≤1.65 μ m.
Embodiment 6, soak respectively thin-film ceramics substrate, ltcc substrate, quartz base plate, silicon substrate, titanium tungsten film layer and the each 10min of golden membranous layer with the above-mentioned nickel solution of 1., 2., 3., 4., 5. carving, carve nickel solution 1., 2., 3., 4., 5. on thin-film ceramics substrate, ltcc substrate, quartz base plate, silicon substrate, titanium tungsten film layer and golden membranous layer almost without affecting.
Claims (4)
1. wet method is carved a nickel solution, it is characterized in that comprising by weight percentage: iron trichloride 2%～10%, weak acid 5%～15%, peroxide accelerator 1%～5%, surplus is deionized water.
2. a kind of wet method according to claim 1 is carved nickel solution, it is characterized in that: iron trichloride 3%～5%, weak acid 7%～12%, peroxide accelerator 1%～4%, surplus is deionized water.
3. a kind of wet method according to claim 1 and 2 is carved nickel solution, it is characterized in that: described weak acid is acetic acid or citric acid.
4. a kind of wet method according to claim 1 and 2 is carved nickel solution, it is characterized in that: described peroxide accelerator is Peracetic Acid or hydrogen peroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410474471.6A CN104195556A (en) | 2014-09-17 | 2014-09-17 | Wet-method nickel etching solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410474471.6A CN104195556A (en) | 2014-09-17 | 2014-09-17 | Wet-method nickel etching solution |
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| CN104195556A true CN104195556A (en) | 2014-12-10 |
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| CN201410474471.6A Pending CN104195556A (en) | 2014-09-17 | 2014-09-17 | Wet-method nickel etching solution |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016041407A1 (en) * | 2014-09-15 | 2016-03-24 | 南通万德科技有限公司 | Etching solution and application thereof |
| CN107254679A (en) * | 2017-06-15 | 2017-10-17 | 中国电子科技集团公司第二十九研究所 | It is a kind of to improve the process of low-temperature co-fired ceramic substrate solderability |
| CN110016668A (en) * | 2019-05-28 | 2019-07-16 | 南昌航空大学 | A kind of environment-friendly type nickel plating lamp cap copper contact nickel layer decoating liquid and strip method |
| CN113774383A (en) * | 2021-08-05 | 2021-12-10 | 南京三乐集团有限公司 | Low-corrosion nickel-removing composition and method for nickel plating layer on surface of pure iron material |
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| CN1815363A (en) * | 2006-03-01 | 2006-08-09 | 中国科学院上海微系统与信息技术研究所 | Wet-method etching liquid for making phase change storage and its wet-method etching process |
| CN1946877A (en) * | 2004-04-14 | 2007-04-11 | 三菱化学株式会社 | Etching method and etchant |
| JP2009235438A (en) * | 2008-03-26 | 2009-10-15 | Toagosei Co Ltd | Etching liquid, etching method using the same, and substrate to be etched |
| TW201308627A (en) * | 2011-05-06 | 2013-02-16 | Advanced Tech Materials | Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications |
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2014
- 2014-09-17 CN CN201410474471.6A patent/CN104195556A/en active Pending
Patent Citations (4)
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| CN1946877A (en) * | 2004-04-14 | 2007-04-11 | 三菱化学株式会社 | Etching method and etchant |
| CN1815363A (en) * | 2006-03-01 | 2006-08-09 | 中国科学院上海微系统与信息技术研究所 | Wet-method etching liquid for making phase change storage and its wet-method etching process |
| JP2009235438A (en) * | 2008-03-26 | 2009-10-15 | Toagosei Co Ltd | Etching liquid, etching method using the same, and substrate to be etched |
| TW201308627A (en) * | 2011-05-06 | 2013-02-16 | Advanced Tech Materials | Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications |
Non-Patent Citations (2)
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| 杨为正: "丝网印刷与金属蚀刻技术", 《网印工业》 * |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016041407A1 (en) * | 2014-09-15 | 2016-03-24 | 南通万德科技有限公司 | Etching solution and application thereof |
| CN107254679A (en) * | 2017-06-15 | 2017-10-17 | 中国电子科技集团公司第二十九研究所 | It is a kind of to improve the process of low-temperature co-fired ceramic substrate solderability |
| CN107254679B (en) * | 2017-06-15 | 2019-04-30 | 中国电子科技集团公司第二十九研究所 | A kind of process improving low-temperature co-fired ceramic substrate solderability |
| CN110016668A (en) * | 2019-05-28 | 2019-07-16 | 南昌航空大学 | A kind of environment-friendly type nickel plating lamp cap copper contact nickel layer decoating liquid and strip method |
| CN110016668B (en) * | 2019-05-28 | 2021-03-23 | 南昌航空大学 | Environment-friendly nickel plating solution and method for stripping copper contact nickel layer of nickel-plated lamp cap |
| CN113774383A (en) * | 2021-08-05 | 2021-12-10 | 南京三乐集团有限公司 | Low-corrosion nickel-removing composition and method for nickel plating layer on surface of pure iron material |
| CN113774383B (en) * | 2021-08-05 | 2023-07-18 | 南京三乐集团有限公司 | Low-corrosion nickel removal composition and method for nickel plating layer on surface of pure iron material |
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Application publication date: 20141210 |