CN1815363A - Wet-method etching liquid for making phase change storage and its wet-method etching process - Google Patents
Wet-method etching liquid for making phase change storage and its wet-method etching process Download PDFInfo
- Publication number
- CN1815363A CN1815363A CN 200610024251 CN200610024251A CN1815363A CN 1815363 A CN1815363 A CN 1815363A CN 200610024251 CN200610024251 CN 200610024251 CN 200610024251 A CN200610024251 A CN 200610024251A CN 1815363 A CN1815363 A CN 1815363A
- Authority
- CN
- China
- Prior art keywords
- etching
- phase
- wet
- acid
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 41
- 239000007788 liquid Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000008569 process Effects 0.000 title claims description 11
- 230000008859 change Effects 0.000 title claims description 9
- 238000003860 storage Methods 0.000 title description 17
- 239000012782 phase change material Substances 0.000 claims abstract description 18
- 230000015654 memory Effects 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 10
- 239000008139 complexing agent Substances 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004094 surface-active agent Substances 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 26
- 238000001039 wet etching Methods 0.000 claims description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 239000012774 insulation material Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 229910005872 GeSb Inorganic materials 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 4
- 239000011707 mineral Substances 0.000 claims description 4
- 150000007524 organic acids Chemical class 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229940095064 tartrate Drugs 0.000 claims description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 239000005864 Sulphur Substances 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 229920000768 polyamine Polymers 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 3
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
- Weting (AREA)
Abstract
Constitution of the etching liquid is as following wt%: 1-30% acid solution, 0.5%-10% oxidant, 0.05%- 10% complexing agent, 0.1-5% surfactant, and other as deionized water. Etching technique includes steps: (1) cleaning out chips of silicon oxide, depositing Ti or TiN, Pt or Au, and film of phase-change material; (2) etching pattern on film of phase-change; (3) depositing Pt or Au; (4) removing unexposed Pt or Au by using debonding technique; (5) etching phase-change material through etching liquid; (6) depositing SiO2 so as to form structure of device. Under condition of controlling etching speed effectively, taking full advantage of positive and lateral etch of etching liquid, the invention prepares Nano structure of phase-change memory through micro processing technique. Advantages are: not polluting device by ion so as to clean device easily, and low cost for treating waste liquor.
Description
Technical field
The present invention relates to make used wet etchant of phase transition storage and wet-etching technology thereof, belong to the microelectronic technique in the microelectronics.
Background technology
Phase change film material random access memory (PRAM) has been compared remarkable advantages with present dynamic RAM (DRAM), flash memory (FLASH): its volume is little, and driving voltage is low, and power consumption is little, and read or write speed is very fast, and is non-volatile.Phase transition storage is not only non-volatility memorizer, and might make multistage storage, and be useful for ultralow temperature and hot environment, anti-irradiation, anti-vibration, therefore not only will be widely applied to daily portable type electronic product, and huge potential application be arranged in fields such as Aero-Space.Especially, its high speed, the non-volatile deficiency that has just in time remedied flash memory (FLASH) and ferroelectric memory (FeRAM) in portable type electronic product.Intel Company just once foretold phase transition storage will replace FLASH, DARM and static RAM (SRAM) chip general very F.F. go into market.International semiconductor federation in the route map of its calendar year 2001 in, phase transition storage is predicted as can realizes one of business-like storer at first equally.In this case, development phase change film material random memory unit device just seems more urgent, phase-change memory unit element helps the rapid phase transition of reversible transition membraneous material under nanometer scale, help the storer integrated level simultaneously and improve low pressure, low-power consumption and high speed.Therefore the research of the nanometer scale preparation of phase-change devices structure and electricity and optical property seems by for important.
In order under low pressure, low-power consumption, to realize rapid phase transition, improve storage speed, embody the superiority bigger, phase change film material is prepared phase-change memory cell than existing memory technology, be made into two dimension or three-dimensional nanoscale, constitute the nanometer storage unit with electrode and seem particularly important.Current semi-conductive technology is 0.09,0.13 and 0.18 μ m.Now adopt the technology of optical exposure and etching, preparation nanometer electronic device difficulty is bigger, and cost is higher.Adopting at interval, graphics art (spacer) need pass through complicated preparation technology though can prepare two dimension or the device of the nanoscale of three-dimensional from 2 d-to-3 d.From the structure nano material preparation of etching selection ratio about 1: 100, and just can realize, and every step process all has certain degree of difficulty by repeatedly exposure, etching and glossing.Therefore there are unfavorable factors such as cost height, process cycle length, optimization technology.Adopt electron beam exposure,, can realize two dimension or three-dimensional nanostructured by ion beam etching.But at different materials, the selection of photoresist and the selection of thickness need a large amount of experiments to realize, just seem very important of the error control of the nano structure device that processes.Prepare phase-change memory unit element by wet-etching technology, be expected to explore a low-cost preparation approach that realizes phase transition storage.
Summary of the invention
Purpose of the present invention is exactly the shortcoming of complicacy of expensive and manufacturing process that will overcome the manufacture craft of existing phase transition storage, seek the wet etching liquid of superior performance and use wet-etching technology, make the phase transition storage of nanostructured by the control time with this with it.
Technical solution of the present invention is as follows:
Be used for the etching agent that the phase-change material wet etching of phase transition storage is used, its composition is by acid solution, oxygenant, and complexing agent, activating agent and deionized water are formed.Wherein acid solution is (wt%) 1～30%, and oxygenant is (wt%) 0.5%～10%, and complexing agent is (wt%) 0.05%～10%, surfactant 0.1～5%, and surplus is a deionized water.Described acid solution is a kind of in mineral acid or the organic acid, and described mineral acid is nitric acid, hydrochloric acid or sulfuric acid; Described organic acid is citric acid, acetic acid or tartrate; Described oxygenant, or be inorganics H
2O
2, KIO
3, FeCl
3And KMnO
4In any one, or be organism formaldehyde, any one in acetaldehyde and the Peracetic acid; Described complexing agent is ethylenediamine tetraacetic acid (EDTA) or many hydroxyls polyamines; Described surfactant is AEO (JFC) or acrylamide.
Realize making the wet-etching technology of phase-change random access memory with above-mentioned etching liquid, its processing step as shown in Figure 1:
(1) oxidized silicon chip is ultrasonic with acetone, add hydrogen peroxide at ammoniacal liquor successively, it is clean that hydrochloric acid adds in the cleaning fluid of hydrogen peroxide heated wash.On the oxidized silicon chip of cleaning, deposit Ti or the TiN film of 30～50nm, deposit Pt or the Au film of 100～200nm again, deposit the phase change film material of 200～300nm at last, be Ge
2Sb
2Te
5, GeSb
2Te
4Or Sb
2Te
3Sulphur is alloy material (Fig. 2);
(2) coat photoresist on phase change film material, stoving time is 30～60 minutes, and the time shutter is 5～10 seconds, and soaking the post bake time in chlorobenzene is 3～10 minutes, and development time is 3～8 seconds, forms figure (Fig. 3);
(3) Pt or the Au film (Fig. 4) of deposition 200～300nm;
(4) sample was soaked in acetone soln 20～50 minutes, make the photoresist dissolving, with metal Pt or the Au film (Fig. 5) outside the stripping technology removal exposure
(5) with etching liquid etching phase-change material provided by the invention, because the place of photoetching is the noncorroding metal film, so phase-change material herein is protected, etching time is 3～30 minutes, by the size (Fig. 6) of control time control device structure;
(6) deposition 200～300nm thermal insulation material surrounds the device nanostructured that forms.Described thermal insulation material is SiO
2Or polymkeric substance, in etching process, made full use of the forward and the side direction etching of wet etching liquid, under the condition of controlling etch rate effectively, formed the nanostructured of phase change memory device.Under micron-sized fabrication process condition, realized the unit component of nano phase transformation memory; Simultaneously, between phase-change material and thermal insulation material, stay immobilising air, strengthened heat-insulating property (Fig. 7).
Test result shows that the threshold voltage current of unit component has all reached the purpose that realizes reversible transition.The present invention helps the method by etching, prepares the phase change film material memory unit component of new nanometer scale, thereby promotes the exploitation of phase transition storage.
The forward of this process makes full use etching liquid and side direction etching are effectively being controlled under the condition of etch rate, have made the nano phase transformation memory structure with a micron processing technology; The result shows that its electric current and voltage is all realized reversible transition.The ion pair device is pollution-free after making, and is convenient to cleaning, liquid waste processing, the low processing of cost and low-cost.
Description of drawings
Fig. 1 wet-etching technology flow process provided by the invention;
Fig. 2 deposits hearth electrode and phase-change material on the oxidation sheet;
Fig. 3 forms figure by photoetching development;
Fig. 4 deposits top electrode Pt;
Fig. 5 uses stripping technology, and Pt makees mask with metal;
Fig. 6 is to the phase-change material wet etching;
Fig. 7 deposits thermal insulation material;
The array structure that Fig. 8 wet etching forms;
The unit component structure of Fig. 9 (a) etching
Fig. 9 (b) EDS collection of illustrative plates
The I-V curve of Figure 10 unit component
Among the figure: 1. silicon chip; 2. silicon dioxide; 3.Ti or TiN; 4.Pt or Au; 5. phase-change material; 6. photoresist.
Embodiment
Describe below by specific embodiment, further illustrate substantive distinguishing features of the present invention and obvious improvement.
(1) configuration 50 gram wet etchant:
Get 10 gram hydrochloric acid solutions, add 3 gram 30%H
2O
2Solution adds 1 gram ethylenediamine tetraacetic acid (EDTA), 0.5 gram AEO (JFC), and all the other add deionized water.
(2) preparation is used for the wet etching sample:
Oxidized silicon chip is ultrasonic with acetone, add hydrogen peroxide at ammoniacal liquor successively respectively, hydrochloric acid adds in the cleaning fluid of hydrogen peroxide and cleans up, and cleans to dry up with nitrogen after finishing.With the metallic film Ti of magnetic control platform sputter 30nm, and then the metallic film Pt of sputter 100nm is as hearth electrode, the phase-change material Ge of last sputter 200nm on the oxidized silicon chip of cleaning
2Sb
2Te
5Coat photoresist on the sample that sputter is good, in constant temperature oven, place 35min, use photo-etching machine exposal 7s then, in chlorobenzene, soak the 5min post bake, use developing liquid developing 5s,, form figure.With magnetron sputtering deposition 200nm metal Pt film.Sample was soaked in acetone soln 30 minutes, make the photoresist dissolving, with the metal Pt film outside the stripping technology removal exposure.Pt is as the mask of wet etching simultaneously.
(3) etching phase-change material Ge
2Sb
2Te
5:
The etching sample of preparation was put into the etching liquid that disposed 5 minutes, agitating solution ceaselessly, etching liquid is rapidly to Ge
2Sb
2Te
5Film carries out forward and side direction etching, forms the nanostructured of phase transition storage.
(4) deposition thermal insulation material SiO
2, its thickness is 250nm, surrounds to form device architecture.
Embodiment 2
(1) configuration 50 gram etching agents
Get 10 gram tartrate, be dissolved in the 30 gram deionized waters, add 1 gram H
2O
2, add 1 gram ethylenediamine tetraacetic acid (EDTA), add 1 gram AEO (JFC), all the other add deionized water.
(2) preparation etching sample.
Oxidized silicon chip is ultrasonic with acetone, add hydrogen peroxide at ammoniacal liquor successively respectively, hydrochloric acid adds wash clean in the cleaning fluid of hydrogen peroxide, cleans to dry up with nitrogen after finishing.With the metallic film Ti of magnetic control platform sputter 50nm, and then the metallic film Pt of sputter 100nm is as hearth electrode, the phase-change material Ge of last sputter 300nm on the oxidized silicon chip of cleaning
2Sb
2Te
5Coat photoresist on the sample that sputter is good, in constant temperature oven, place 30min, use photo-etching machine exposal 7s then, in chlorobenzene, soak the 5min post bake, use developing liquid developing 5s, form figure.With magnetron sputtering deposition 200nm metal Pt film.Sample is immersed in the acetone soln, makes the photoresist dissolving, with the metal Pt film outside the stripping technology removal exposure.Pt is as the mask of wet etching simultaneously.
(3) etching phase-change material GeSb
2Te
4
The etching sample of preparation was put into the etching liquid that disposed 8 minutes, agitating solution ceaselessly, etching liquid is rapidly to GeSb
2Te
4Film carries out forward and side direction etching, forms the nanostructured of phase transition storage.
(4) deposited polymer is a thermal insulation material, and its thickness is 350nm, surrounds to form device architecture, and stay not moving air between phase-change material and insulating material, has strengthened insulativity.
Result in example 1 and the example 2 is tested sign, the array structure that forms is analyzed with scanning electron microscope (SEM) and power spectrum (EDS), with digital source Keithley 2400, pulse producer 81104A, the electric property of test component.By wet etching, formed the array structure of phase transition storage, as (Fig. 8).Ge outside the unit component structure
2Sb
2Te
5Or GeSb
2Te
4All be etched away, and the Ge in the unit component
2Sb
2Te
5Or GeSb
2Te
4Be subjected to protection (Fig. 9) to a certain degree.To Ge
2Sb
2Te
5Phase-change material is in electrical performance testing, and current scanning is observed transformation curve for the first time.Apply pulse after being phase-changed into polycrystalline, become amorphous again, observe phase transition process once more.Test result shows that the threshold voltage current of the unit component of made has all reached the purpose that realizes reversible transition, as (Figure 10).
Claims (7)
1. wet etching liquid of making phase-change random access memory, the weight percent that it is characterized in that described etching liquid consists of: acid solution is 1～30%, and oxygenant is 0.5%～10%, and complexing agent is 0.05%～10%, surfactant 0.1～5%, surplus are deionized water; Described acid solution is a kind of in mineral acid or the organic acid; Described mineral acid is nitric acid, hydrochloric acid or sulfuric acid; Described organic acid is citric acid, acetic acid or tartrate;
Described oxygenant is inorganics H
2O
2, KIO
3, FeCl
3And KMnO
4In any one, or be organism formaldehyde, any one in acetaldehyde and the Peracetic acid;
Described complexing agent is ethylenediamine tetraacetic acid or many hydroxyls polyamines;
Described surfactant is AEO or acrylamide.
2. by the wet-etching technology of the wet etching liquid of the described making phase-change random access memory of claim 1, it is characterized in that the wet-etching technology step is:
(a) clean oxidized silicon chip, deposit Ti or the TiN of 30nm～50nm successively, the Pt of 100nm～200nm or Au deposit the phase-change material of 200nm～300nm at last;
(b) gluing on phase-change thin film, baking, exposure, post bake, developing forms figure;
(c) deposition 200nm～300nm metal Pt or Au;
(d) with metal Pt or Au film outside the stripping technology removal exposure;
(e) with etching liquid forward and side direction etching phase-change material;
(f) thermal insulation material of deposition 200nm～300nm, the nanostructured of formation device.
3. press the wet-etching technology of claims 2 described making phase-change random access memories, the phase change film material that it is characterized in that processing step (a) is Ge
2Sb
2Te
5, GeSb
2Te
4Or Sb
2Te
3Sulphur is alloy material.
4. press the wet-etching technology of the described making phase-change random access memory of claim 2, it is characterized in that in the photoetching process of processing step (b) that stoving time is 30～60 minutes, the time shutter is 5～10 seconds, soaking the post bake time in chlorobenzene is 3～10 minutes, and development time is 3～8 seconds.
5. by the wet-etching technology of the described making phase-change random access memory of claim 2, it is characterized in that the stripping technology in the processing step (d) is to soak 20～50 minutes in acetone, the dissolving photoresist is removed exposure metallic film in addition.
6. by the wet-etching technology of the described making phase-change random access memory of claim 2, it is characterized in that the time of etching liquid etching process in the processing step (e) is 3～30 minutes, by the size of control time control device structure.
7. by the wet-etching technology of the described making phase-change random access memory of claim 2, it is characterized in that the thermal insulation material in the processing step (f) is SiO
2Or polymkeric substance, surround the device architecture that forms; Simultaneously, between phase-change material and thermal insulation material, stay immobilising air, strengthened heat-insulating property.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100242519A CN100517065C (en) | 2006-03-01 | 2006-03-01 | Wet-method etching liquid for making phase change storage and its wet-method etching process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100242519A CN100517065C (en) | 2006-03-01 | 2006-03-01 | Wet-method etching liquid for making phase change storage and its wet-method etching process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1815363A true CN1815363A (en) | 2006-08-09 |
| CN100517065C CN100517065C (en) | 2009-07-22 |
Family
ID=36907612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100242519A Expired - Fee Related CN100517065C (en) | 2006-03-01 | 2006-03-01 | Wet-method etching liquid for making phase change storage and its wet-method etching process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100517065C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101139713B (en) * | 2006-09-07 | 2010-06-09 | 台湾薄膜电晶体液晶显示器产业协会 | Etching liquid and method for manufacturing patterned conductive layer using the same |
| CN101373342B (en) * | 2008-10-23 | 2011-03-02 | 江阴江化微电子材料股份有限公司 | Acidic stripping liquid and preparing method thereof |
| CN104195556A (en) * | 2014-09-17 | 2014-12-10 | 中国电子科技集团公司第五十四研究所 | Wet-method nickel etching solution |
| CN104462711A (en) * | 2014-12-22 | 2015-03-25 | 东南大学 | Method for obtaining monocrystalline silicon holocrystalline face etching rate under action of surface active agents |
| CN109987575A (en) * | 2017-12-29 | 2019-07-09 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
| CN114068298A (en) * | 2020-08-03 | 2022-02-18 | 东莞新科技术研究开发有限公司 | Wafer surface processing method |
| CN114721230A (en) * | 2022-03-21 | 2022-07-08 | 中国科学院上海微系统与信息技术研究所 | Phase change memory photoetching process optimization method |
| WO2022262414A1 (en) * | 2021-06-16 | 2022-12-22 | 华为技术有限公司 | Phase change memory, electronic device, and preparation method for phase change memory |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100615586B1 (en) * | 2003-07-23 | 2006-08-25 | 삼성전자주식회사 | Phase change memory device including localized phase transition area in porous dielectric layer and method of forming the same |
| CN100342562C (en) * | 2003-11-26 | 2007-10-10 | 中国科学院上海微系统与信息技术研究所 | Method for preparing phase-changing film material nanometer wire |
| US7005665B2 (en) * | 2004-03-18 | 2006-02-28 | International Business Machines Corporation | Phase change memory cell on silicon-on insulator substrate |
| KR100604853B1 (en) * | 2004-05-15 | 2006-07-26 | 삼성전자주식회사 | Etching solution for removing oxide film, method of preparing the same, and method of manufacturing semiconductor device |
| CN1300839C (en) * | 2004-08-06 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | Process for preparing nano electronic phase change storage |
-
2006
- 2006-03-01 CN CNB2006100242519A patent/CN100517065C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101139713B (en) * | 2006-09-07 | 2010-06-09 | 台湾薄膜电晶体液晶显示器产业协会 | Etching liquid and method for manufacturing patterned conductive layer using the same |
| CN101373342B (en) * | 2008-10-23 | 2011-03-02 | 江阴江化微电子材料股份有限公司 | Acidic stripping liquid and preparing method thereof |
| CN104195556A (en) * | 2014-09-17 | 2014-12-10 | 中国电子科技集团公司第五十四研究所 | Wet-method nickel etching solution |
| CN104462711A (en) * | 2014-12-22 | 2015-03-25 | 东南大学 | Method for obtaining monocrystalline silicon holocrystalline face etching rate under action of surface active agents |
| CN104462711B (en) * | 2014-12-22 | 2017-10-10 | 东南大学 | The acquisition methods of monocrystalline silicon holocrystalline face etch rate under Action of Surfactant |
| CN109987575A (en) * | 2017-12-29 | 2019-07-09 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
| CN114068298A (en) * | 2020-08-03 | 2022-02-18 | 东莞新科技术研究开发有限公司 | Wafer surface processing method |
| WO2022262414A1 (en) * | 2021-06-16 | 2022-12-22 | 华为技术有限公司 | Phase change memory, electronic device, and preparation method for phase change memory |
| CN114721230A (en) * | 2022-03-21 | 2022-07-08 | 中国科学院上海微系统与信息技术研究所 | Phase change memory photoetching process optimization method |
| CN114721230B (en) * | 2022-03-21 | 2024-09-03 | 中国科学院上海微系统与信息技术研究所 | Phase-change memory photoetching process optimization method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100517065C (en) | 2009-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100517065C (en) | Wet-method etching liquid for making phase change storage and its wet-method etching process | |
| Jiang et al. | Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers | |
| Melianas et al. | High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene | |
| CN1819204A (en) | Nonvolatile nanochannel memory device using mesoporous material | |
| CN106953010A (en) | A kind of organic field effect tube memory based on polymer-doped semi-conductor nano particles | |
| CN108258116A (en) | A kind of semiconductor nano array organic field effect tube multi-bit memory and preparation method thereof | |
| CN110364429B (en) | Metal nanowire film, preparation method thereof and thin film transistor array | |
| CN110379922A (en) | A kind of flexibility Ag/MoS2The preparation method of/Cu resistive formula memory | |
| CN101521177B (en) | Method for preparing transverse phase transition memory by using single-walled carbon nanotube as electrode | |
| CN102832340A (en) | Phase transition storage unit and manufacture method thereof | |
| CN112490359B (en) | Sb single element nanoparticle phase change memory based on AAO template and preparation method thereof | |
| CN101488555A (en) | Manufacturing method for low power consumption phase changing memory | |
| CN102856434B (en) | Preparation method for square silicon nano-porous array | |
| CN110797458B (en) | Memristor and preparation method thereof | |
| CN100495683C (en) | A method for making resistor random memory unit array | |
| CN100397561C (en) | Process for preparing nano phase change storage device unit | |
| Pernel et al. | Copper in organic acid based cleaning solutions | |
| CN100379047C (en) | Method for producing nano phase transition storage unit | |
| CN101504969A (en) | Production method for phase change memory with novel electrode structure | |
| CN101764197B (en) | Method for manufacturing nano-sized phase change memory | |
| CN1866496A (en) | Method for preparing nanoelectronic memory by electron beam exposure and mechanochemical polishing process | |
| CN107768518B (en) | A kind of Al/Ge for phase transition storage10Sb90Class superlattices phase change film material and preparation method | |
| CN112331766A (en) | Memristor based on molybdenum telluride, preparation method thereof and nonvolatile memory | |
| CN1564337A (en) | Improved unit structure for reducing phase transition memory writing current, and method thereof | |
| CN1858922A (en) | Method for preparing phase shift storage by silicon wet etching and keying process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090722 |