CN101504969A - Production method for phase change memory with novel electrode structure - Google Patents
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- CN101504969A CN101504969A CNA2009100454412A CN200910045441A CN101504969A CN 101504969 A CN101504969 A CN 101504969A CN A2009100454412 A CNA2009100454412 A CN A2009100454412A CN 200910045441 A CN200910045441 A CN 200910045441A CN 101504969 A CN101504969 A CN 101504969A
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Abstract
The invention discloses a method for preparing a phase change storage device with a novel electrode structure, which comprises the following steps: preparing a SixN dielectric layer on a silicon chip by applying a chemical vapor deposition method; depositing a Al layer, a Ti layer and a TiN layer in turn, and using the layers as bottom layer electrodes; preparing a SixO as an insulating layer on the bottom layer electrodes by using an ultra-high vacuum electron beam evaporation method; spin-coating a negative resist; preparing an array of a set-length diameter circle and a subsequent photoetching alignment mark through electron beam exposure; etching the silicon oxide to form an array of silicon oxide columns; depositing a metallic material tungsten by using the chemical vapor deposition method so that the silicon oxide columns are evenly enwrapped by the tungsten; depositing a phase change material; depositing the silicon oxide as a dielectric protective layer; punching holes on the silicon oxide; and preparing a top layer electrode. The method can effectively reduce the heat conduction rate and reduce the loss of heat in the part of the volume; and simultaneously, the method can transfer the high temperature point to a phase change material layer, and is more advantageous for improving the performance of the device.
Description
Technical field
The invention belongs to microelectronic, relate to a kind of preparation method of phase transition storage, relate in particular to a kind of preparation method with phase transition storage of novel electrode structure.
Background technology
Phase-change random access memory (PCRAM) has been compared remarkable advantages with present dynamic random access memory (DRAM), flash memory (FLASH): its volume is little, and driving voltage is low, and power consumption is little, and read or write speed is fast, and is non-volatile.Phase transition storage is not only non-volatility memorizer, and might make the multimachine storage, and be useful for ultralow temperature and hot environment, anti-irradiation, anti-vibration, therefore not only will be widely applied to daily portable electronic products, and huge potential application be arranged in aerospace field.Especially, its high speed, the non-volatile deficiency that has just in time remedied flash memory (FLASH) and ferroelectric memory (FeRAM) in portable type electronic product.Intel Company just once foretold phase transition storage will replace FLASH, DRAM and static random access memory (SRAM) chip general very F.F. go into market.International semiconductor federation is predicted as phase transition storage equally and can realizes one of business-like memory at first in the route map of its calendar year 2001.
Although reported the method for a lot of raising phase transition storages at present, before real commercialization, also need reduce device power consumption effectively, improve the service speed of device.In device cell, improve the heat efficiency and can reduce device power consumption effectively.In the vertical structure, 60% to 70% heat dissipation is arranged in the bottom electrode material, the efficient heat that really is used for device operation is less than 1.5%.How to reduce the heat that scatters and disappears in the bottom electrode material effectively, also do not cause enough attention.Propose the utilization rate that a kind of novel bottom electrode structure will help to improve efficient heat herein, reduce the heat that scatters and disappears in the bottom electrode material.
Summary of the invention
Technical problem to be solved by this invention is: a kind of preparation method with phase transition storage of novel electrode structure is provided, helps to prepare novel high density low power consumption phase changing memory, promote the development of memory.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of preparation method with phase transition storage of novel electrode structure comprises the steps:
The method of steps A, applied chemistry vapour deposition on silicon chip prepares one deck SixN dielectric layer;
Step B, depositing Al layer, Ti layer, TiN layer successively make it as bottom electrode;
Step C, on above-mentioned bottom electrode, use the ultra vacuum electron beam evaporation legal system to be equipped with SixO as insulating barrier; The spin coating negative resist; Utilize electron beam exposure to prepare the array of preseting length diameter circle and the alignment mark of follow-up photoetching; The described silica of etching forms array of silicon oxide columns;
Step D, use chemical vapour deposition technique deposit metallic material tungsten make its evenly parcel silicon oxide column;
Step e, sediment phase change material;
Step F, utilize ion beam depositing method cvd silicon oxide as medium protective layer;
Step G, spin coating positive corrosion-resisting agent, the electron beam exposure perforate, careful accurate executing location is aimed at before the exposure, makes the hole be positioned at the position of silicon oxide column;
Step H, magnetron sputtering deposition are set the tungsten of thickness, and ultraviolet photolithographic is after reactive ion etching forms upper electrode.
As a preferred embodiment of the present invention, in the steps A, the thickness of SixN dielectric layer is 300～500nm; Among the step B, use the thick bottom electrode material of method deposition 300nm of magnetron sputtering, the thickness of Al layer, Ti layer, TiN layer is respectively 150nm, 100nm, 50nm in the bottom electrode material; Among the step C, the SixO layer is 200nm, and the resist THICKNESS CONTROL is 200nm; Utilize the array of electron beam exposure preparation 40～60nm diameter circle and the alignment mark of follow-up photoetching, the array cycle is 100nm～1um; Use the described silica of ICP etching; Among the step D, the thick metal material tungsten of deposition 100nm; In the step e, utilize the phase-change material of magnetron sputtering method deposit thickness for 100nm; In the step F, the silica that utilizes ion beam depositing method deposition 200nm is as medium protective layer; Among the step G, described positive corrosion-resisting agent is PMMA, and the resist THICKNESS CONTROL is 200nm; Among the step H, the thickness of the tungsten of magnetron sputtering deposition is 150nm.
As a preferred embodiment of the present invention, described step G also comprises: utilize the reactive ion etching method to remove the silica of position of opening deposition, guaranteeing does not have remaining silica on the phase-change material; Etching is finished, and soaks by acetone and removes remaining resist;
As a preferred embodiment of the present invention, before steps A, also comprise the cleaning silicon chip step:
Silicon chip is put into first solution boiled 3-10 minute, cooling deionized water rinsing 1-5 minute, then dries up with nitrogen; Wherein, described first solution is the mixed liquor of ammoniacal liquor, hydrogen peroxide, deionized water, and the ratio of ammoniacal liquor, hydrogen peroxide, deionized water is 1:2:5.
Silicon chip is put into second solution boiled 3-10 minute, cooling deionized water rinsing 1-5 minute, then dries up with nitrogen; Wherein, described second solution is the mixed liquor of hydrochloric acid, hydrogen peroxide, deionized water, and the ratio of hydrochloric acid, hydrogen peroxide, deionized water is 1:2:5.
Behind the cleaning silicon chip, silicon chip is toasted the moisture that 10min-60min removes the surface in 100 ℃-200 ℃ baking oven.
As a preferred embodiment of the present invention, silicon chip surface utilizes the method for chemical vapour deposition (CVD) to prepare one deck SixN dielectric layer, and its THICKNESS CONTROL is 300～500nm; The THICKNESS CONTROL of lower electrode Al/Ti/TiN is 150nm/100nm/50nm; The THICKNESS CONTROL of insulating barrier SixO is 200nm; The THICKNESS CONTROL of the metal material tungsten of parcel silica cylinder is 100nm; The THICKNESS CONTROL of phase-change material is 100nm; The silica medium protective layer thickness that deposits on the phase-change material is controlled to be 100nm; The THICKNESS CONTROL of upper strata extraction electrode material of tungsten is 150nm.
As a preferred embodiment of the present invention, the lower electrode that contacts with phase-change material is the structure of tungsten parcel silicon oxide column, the preparation of silicon oxide column utilizes electron beam exposure to finish in conjunction with the method for ICP etching, finishes the preparation of alignment mark in the preparation silicon oxide column; The diameter of silicon oxide column is controlled to be 30～60nm, and the preparation method of tungsten is a magnetron sputtering method.
As a preferred embodiment of the present invention, the method normal temperature that adopts electron beam evaporation or ion beam depositing for preparing of the silica on the phase-change material layers deposits, do not influence the character of phase-change material when guaranteeing cvd silicon oxide, the THICKNESS CONTROL of silica is 200nm.
As a preferred embodiment of the present invention, during silica on the etching phase-change material, need perforate on the position of silicon oxide column, remainder is protected by the PMMA resist; When carrying out electron beam exposure, at first utilize the alignment mark of aforementioned formation to carry out the graphic structure aligning, the then careful accurate state of adjusting scanning electron microscopy makes it reach best graphics resolution, exposes at last; The etching of silica utilizes the reactive ion etching method to finish.
As a preferred embodiment of the present invention, utilize the method for ultraviolet photolithographic association reaction ion etching to draw the top layer electrode; At first utilize the thick tungsten electrode material of magnetron sputtering method deposition 150nm, utilize electron beam exposure to form the top layer electrode pattern afterwards, final reaction ion etching transition diagram forms complete device architecture.
A kind of preparation method with phase transition storage of novel electrode structure, described method comprise the preparation of bottom electrode, the deposition of phase-change material, the preparation of top layer electrode and the deposition of dielectric layer; Wherein, the bottom electrode that contacts with phase-change material is the structure of tungsten parcel silicon oxide column.
Beneficial effect of the present invention is:
The first, the present invention can reduce effectively in the device operation process and to produce geothermal flow to lower floor's electrode material transmission.In the OUM structure, the heat that scatters and disappears in the bottom electrode material accounts for 60～70% of total amount of heat.Among the present invention bottom electrode is designed to the structure of tungsten parcel silica body, therefore the thermal conductivity far of silica can reduce thermal conduction rate effectively less than the thermal conductivity of electrode material.
The second, the electrode structure form among the present invention can reduce the volume of electrode material effectively, because of the oxidized silicon of electrode centers part replaces, greatly reduces the volume of electrode material, can reduce the loss of heat in this partial volume thus.
The 3rd, the electrode structure among the present invention can make heat utilization ratio higher so that the temperature peak in the device operation shifts to phase-change material layers.In device architecture, when the phase-change material layer thickness is certain, along with the reduction of electrode layers thickness will make the temperature peak shift to phase-change material layers, in the bottom electrode structure among the present invention, it is very thin that the electrode material thickness (less than 80nm) that is wrapped in the silicon oxide column top layer is compared with traditional thickness of electrode (500nm), therefore high temperature dot can be shifted to phase-change material layers, more help the lifting of device performance.
The preparation method of phase transition storage of the present invention helps to prepare novel high density low power consumption phase changing memory, promotes the development of memory.
Description of drawings
Fig. 1 is the structural representation of phase transition storage behind the step B.
Fig. 2 is the structural representation of phase transition storage behind the step C.
Fig. 3 A-3B is the structural representation of phase transition storage behind the step D.
Fig. 4 is the structural representation of phase transition storage after the step e.
Fig. 5 is the structural representation of phase transition storage after the step F.
Fig. 6 is the structural representation of phase transition storage behind the step G.
Fig. 7 A-7B is the structural representation of phase transition storage behind the step H.
Fig. 8 A-8B is the structural representation of phase transition storage behind the step I.
Embodiment
Describe the preferred embodiments of the present invention in detail below in conjunction with accompanying drawing.
Embodiment one
See also Fig. 1-Fig. 8, the present invention has disclosed a kind of preparation method with phase transition storage of novel electrode structure, specifically comprises the steps:
[steps A] silicon chip substrate is cleaned.
With silicon chip put into 1# liquid (ammoniacal liquor: hydrogen peroxide: deionized water=1:2:5) boiled 5 minutes, the cooling, deionized water rinsing 3 minutes, nitrogen dries up then.Main effect: greasy dirt and the bulky grain of removing silicon face.
Silicon chip is put into 2# liquid, and (hydrochloric acid: hydrogen peroxide: deionized water=1:2:5) clean, method are with 1# liquid, and main effect is a metal ion of removing silicon chip surface.
Then, silicon chip is toasted the moisture that 30min removes the surface in 120 ℃ baking oven.
The preparation of [step B] bottom dielectric layer.
The method of utilizing chemical vapour deposition (CVD) deposition one layer thickness on the clean silicon chip of aforementioned processing is the SixN (as shown in Figure 1) of 300～500nm.
The preparation of [step C] bottom electrode.
Utilize the method for magnetron sputtering to form bottom electrode Al/Ti/TiN, its corresponding thickness is controlled to be 150nm/100nm/50nm (as shown in Figure 2).
The preparation of [step D] silica cylinder.
Utilize the thick silica of CVD method deposition 200nm, spin coating SU8 resist, THICKNESS CONTROL is 200nm.Electron beam exposure forms resist figure, the alignment mark figure (as shown in Figure 3A) during comprising follow-up photoetching.Utilize the method for ICP etching, shift the resist figure on silicon oxide layer, guarantee not have the silica part of resist protection to remove (shown in Fig. 3 B) fully during etching.
The preparation of [step e] parcel silica cylinder metal material tungsten.
Utilize the thick tungsten of CVD method deposition 100nm, make its evenly parcel silica cylinder (as shown in Figure 4).
The preparation of [step F] phase-change material.
Utilize the thick phase-change material (as shown in Figure 5) of magnetron sputtering method deposition 100nm.
The preparation of [step G] silica medium protective layer.
Utilize the ion beam depositing legal system to be equipped with the silica of thickness for 200nm, the normal temperature deposition guarantees not influence the character (as shown in Figure 6) of lower floor's phase-change material.
The perforate of [step H] silica.
Spin coating PMMA positive corrosion-resisting agent, when carrying out electron beam exposure, at first utilize the alignment mark of aforementioned formation to carry out the graphic structure aligning, the then careful accurate state of adjusting scanning electron microscopy, make it reach best graphics resolution, (shown in Fig. 7 A) at last exposes.The etching of silica utilizes the reactive ion etching method to finish, and guarantees during etching that the silica in the hole is removed fully, otherwise can cause the top layer electrode and can not effectively contact between the phase-change material (shown in Fig. 7 B).
The preparation of [step I] top layer electrode.
Utilize the thick tungsten of magnetron sputtering method deposition 150nm as the top layer electrode material, simultaneously electron beam exposure SU8 negative photoresist.Utilize the method for ultraviolet photolithographic to form the electrode structure figure, the photoresist THICKNESS CONTROL is 150～200nm, needs to carry out pattern alignment before photoetching, makes upper electrode be positioned at the position (shown in Fig. 8 A-8B) of silicon oxide column.Then, remove the SU8 photoresist that participates in.
In sum, by above-mentioned improvement, the preparation method of phase transition storage of the present invention helps to prepare novel high density low power consumption phase changing memory, promotes the development of memory.
The first, the present invention can reduce effectively in the device operation process and to produce geothermal flow to lower floor's electrode material transmission.In the OUM structure, the heat that scatters and disappears in the bottom electrode material accounts for 60～70% of total amount of heat.Among the present invention bottom electrode is designed to the structure of tungsten parcel silica body, therefore the thermal conductivity far of silica can reduce thermal conduction rate effectively less than the thermal conductivity of electrode material.
The second, the electrode structure form among the present invention can reduce the volume of electrode material effectively, because of the oxidized silicon of electrode centers part replaces, greatly reduces the volume of electrode material, can reduce the loss of heat in this partial volume thus.
The 3rd, the electrode structure among the present invention can make heat utilization ratio higher so that the temperature peak in the device operation shifts to phase-change material layers.In device architecture, when the phase-change material layer thickness is certain, along with the reduction of electrode layers thickness will make the temperature peak shift to phase-change material layers, in the bottom electrode structure among the present invention, it is very thin that the electrode material thickness (less than 80nm) that is wrapped in the silicon oxide column top layer is compared with traditional thickness of electrode (500nm), therefore high temperature dot can be shifted to phase-change material layers, more help the lifting of device performance.
Embodiment two
In the present embodiment, the preparation method of phase transition storage comprises the steps:
1, on the silicon chip of (100) orientation, the method for applied chemistry vapour deposition at first prepares one deck SixN dielectric layer, and its THICKNESS CONTROL is 300～500nm;
2, use the method for magnetron sputtering to deposit thick A1 (150nm)/Ti (the 100nm)/TiN (50nm) of 300nm then as the bottom electrode material;
3, on bottom electrode, use the ultra vacuum electron beam evaporation legal system to be equipped with the thick SixO of 200nm as insulating barrier;
4, spin coating SU8 negative resist afterwards, the resist THICKNESS CONTROL is 200nm;
5, utilize the array of electron beam exposure preparation 40～60nm diameter circle and the alignment mark of follow-up photoetching, the array cycle is 100nm～1um;
6, use the silica of ICP etching 200nm, form array of silicon oxide columns; Use the thick metal material tungsten of chemical vapour deposition technique deposition 100nm, make its evenly parcel silicon oxide column;
7, utilize the phase-change material of magnetron sputtering method deposit thickness for 100nm;
8, utilize the silica of ion beam depositing method deposition 200nm as medium protective layer;
9, spin coating positive corrosion-resisting agent PMMA950k, the resist THICKNESS CONTROL is 200nm, the electron beam exposure perforate, careful accurate executing location is aimed at before the exposure, makes the hole be positioned at the position of silicon oxide column; Utilize the reactive ion etching method to remove the silica of position of opening deposition, guaranteeing does not have remaining silica on the phase-change material; Etching is finished acetone and is soaked the PMMA resist of removing remnants;
10, magnetron sputtering deposition thickness is the tungsten of 150nm, and ultraviolet photolithographic is after reactive ion etching forms upper electrode.
Here description of the invention and application is illustrative, is not to want with scope restriction of the present invention in the above-described embodiments.Here the distortion of disclosed embodiment and change are possible, and the various parts of the replacement of embodiment and equivalence are known for those those of ordinary skill in the art.Those skilled in the art are noted that under the situation that does not break away from spirit of the present invention or substantive characteristics, and the present invention can be with other forms, structure, layout, ratio, and realize with other elements, material and parts.Under the situation that does not break away from the scope of the invention and spirit, can carry out other distortion and change here to disclosed embodiment.
Claims (10)
1, a kind of preparation method with phase transition storage of novel electrode structure is characterized in that, comprises the steps:
Steps A, on silicon chip preparation one deck SixN dielectric layer;
Step B, depositing Al layer, Ti layer, TiN layer successively make it as bottom electrode;
Step C, on above-mentioned bottom electrode, use the ultra vacuum electron beam evaporation legal system to be equipped with SixO as insulating barrier; The spin coating negative resist; Utilize electron beam exposure to prepare the array of preseting length diameter circle and the alignment mark of follow-up photoetching; The described silica of etching forms array of silicon oxide columns;
Step D, use chemical vapour deposition technique deposit metallic material tungsten make its evenly parcel silicon oxide column;
Step e, sediment phase change material;
Step F, utilize ion beam depositing method cvd silicon oxide as medium protective layer;
Step G, spin coating positive corrosion-resisting agent, the electron beam exposure perforate, careful accurate executing location is aimed at before the exposure, makes the hole be positioned at the position of silicon oxide column;
Step H, magnetron sputtering deposition are set the tungsten of thickness, and ultraviolet photolithographic is after reactive ion etching forms upper electrode.
2, the preparation method with phase transition storage of novel electrode structure according to claim 1 is characterized in that:
In the steps A, the method for applied chemistry vapour deposition prepares one deck SixN dielectric layer, and the thickness of SixN dielectric layer is 300～500nm;
Among the step B, use the thick bottom electrode material of method deposition 300nm of magnetron sputtering, the thickness of Al layer, Ti layer, TiN layer is respectively 150nm, 100nm, 50nm in the bottom electrode material;
Among the step C, on above-mentioned bottom electrode, use the ultra vacuum electron beam evaporation legal system to be equipped with SixO as insulating barrier; The SixO layer is 200nm, and the resist THICKNESS CONTROL is 200nm; Utilize the array of electron beam exposure preparation 40～60nm diameter circle and the alignment mark of follow-up photoetching, the array cycle is 100nm～1um; Use the described silica of ICP etching;
Among the step D, the thick metal material tungsten of deposition 100nm;
In the step e, utilize the phase-change material of magnetron sputtering method deposit thickness for 100nm;
In the step F, the silica that utilizes ion beam depositing method deposition 200nm is as medium protective layer;
Among the step G, described positive corrosion-resisting agent is PMMA, and the resist THICKNESS CONTROL is 200nm;
Among the step H, the thickness of the tungsten of magnetron sputtering deposition is 150nm.
3, the preparation method with phase transition storage of novel electrode structure according to claim 1 is characterized in that:
Described step G also comprises:
Utilize the reactive ion etching method to remove the silica of position of opening deposition, guaranteeing does not have remaining silica on the phase-change material;
Etching is finished, and soaks by acetone and removes remaining resist.
4, the preparation method with phase transition storage of novel electrode structure according to claim 1 is characterized in that:
Before steps A, also comprise the cleaning silicon chip step:
Silicon chip is put into first solution boiled 3-10 minute, cooling deionized water rinsing 1-5 minute, then dries up with nitrogen; Wherein, described first solution is the mixed liquor of ammoniacal liquor, hydrogen peroxide, deionized water, and the ratio of ammoniacal liquor, hydrogen peroxide, deionized water is 1:2:5;
Silicon chip is put into second solution boiled 3-10 minute, cooling deionized water rinsing 1-5 minute, then dries up with nitrogen; Wherein, described second solution is the mixed liquor of hydrochloric acid, hydrogen peroxide, deionized water, and the ratio of hydrochloric acid, hydrogen peroxide, deionized water is 1:2:5;
Behind the cleaning silicon chip, silicon chip is toasted the moisture that 10min-60min removes the surface in 100 ℃-200 ℃ baking oven.
5, the preparation method with phase transition storage of novel electrode structure according to claim 1 is characterized in that:
Silicon chip surface utilizes the method for chemical vapour deposition (CVD) to prepare one deck SixN dielectric layer, and its THICKNESS CONTROL is 300～500nm.
6, the preparation method with phase transition storage of novel electrode structure according to claim 1 is characterized in that:
The lower electrode that contacts with phase-change material is the structure of tungsten parcel silicon oxide column, and the preparation of silicon oxide column utilizes electron beam exposure to finish in conjunction with the method for ICP etching, finishes the preparation of alignment mark in the preparation silicon oxide column;
The diameter of silicon oxide column is controlled to be 30～60nm, and the preparation method of tungsten is a magnetron sputtering method.
7, the preparation method with phase transition storage of novel electrode structure according to claim 1 is characterized in that:
The method normal temperature that adopts electron beam evaporation or ion beam depositing for preparing of the silica on the phase-change material layers deposits, and does not influence the character of phase-change material when guaranteeing cvd silicon oxide.
8, the preparation method with phase transition storage of novel electrode structure according to claim 1 is characterized in that:
During silica on the etching phase-change material, need perforate on the position of silicon oxide column, remainder is protected by the PMMA resist;
When carrying out electron beam exposure, at first utilize the alignment mark of aforementioned formation to carry out the graphic structure aligning, the then careful accurate state of adjusting scanning electron microscopy makes it reach best graphics resolution, exposes at last;
The etching of silica utilizes the reactive ion etching method to finish.
9, the preparation method with phase transition storage of novel electrode structure according to claim 1 is characterized in that:
Utilize the method for ultraviolet photolithographic association reaction ion etching to draw the top layer electrode;
At first utilize the tungsten electrode material of magnetron sputtering method depositing and setting thickness, utilize electron beam exposure to form the top layer electrode pattern afterwards, final reaction ion etching transition diagram forms complete device architecture.
10, a kind of preparation method with phase transition storage of novel electrode structure is characterized in that:
Described method comprises the preparation of bottom electrode, the deposition of phase-change material, the preparation of top layer electrode and the deposition of dielectric layer;
Wherein, the bottom electrode that contacts with phase-change material is the structure of tungsten parcel silicon oxide column.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101763452B (en) * | 2010-01-07 | 2011-12-21 | 中国科学院上海微系统与信息技术研究所 | Simulation method of phase-change memory |
| CN102447061A (en) * | 2011-12-12 | 2012-05-09 | 华中科技大学 | Preparation method of high-speed low-power-consumption phase change memory |
| CN112736197A (en) * | 2020-12-29 | 2021-04-30 | 西北工业大学 | Method for improving phase-change material |
| GB2589320A (en) * | 2019-11-22 | 2021-06-02 | Ucl Business Ltd | Method for manufacturing a memory resistor device |
-
2009
- 2009-01-23 CN CN2009100454412A patent/CN101504969B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101763452B (en) * | 2010-01-07 | 2011-12-21 | 中国科学院上海微系统与信息技术研究所 | Simulation method of phase-change memory |
| CN102447061A (en) * | 2011-12-12 | 2012-05-09 | 华中科技大学 | Preparation method of high-speed low-power-consumption phase change memory |
| CN102447061B (en) * | 2011-12-12 | 2014-08-27 | 华中科技大学 | Preparation method of high-speed low-power-consumption phase change memory |
| GB2589320A (en) * | 2019-11-22 | 2021-06-02 | Ucl Business Ltd | Method for manufacturing a memory resistor device |
| GB2589320B (en) * | 2019-11-22 | 2022-10-05 | Ucl Business Ltd | Method for manufacturing a memory resistor device |
| CN112736197A (en) * | 2020-12-29 | 2021-04-30 | 西北工业大学 | Method for improving phase-change material |
| CN112736197B (en) * | 2020-12-29 | 2023-10-31 | 西北工业大学 | Method for improving phase change material |
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| Publication number | Publication date |
|---|---|
| CN101504969B (en) | 2010-12-29 |
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