CN105070827B - Level based on corrosion limits the autoregistration preparation method of phase transition storage entirely - Google Patents
Level based on corrosion limits the autoregistration preparation method of phase transition storage entirely Download PDFInfo
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Abstract
A kind of level based on corrosion limits the autoregistration preparation method of phase transition storage entirely, and this method includes：In the electric insulating material of Grown first layer, spin coating is simultaneously lithographically formed the first mask layer of longitudinal direction；The first function material layer is deposited on the first electric heating insulating barrier, and forms the first functional material layer gap；Prepare one layer of phase-change material layers thereon；Annealing, corrosion, phase-change material layers are removed, and form phase-change material layers nano wire；Photoetching, forms the phase-change material quantum dot of horizontally-opposed electrode layer localization；The second mask layer is removed, the second electric heating insulating barrier is deposited；Remove the 3rd mask layer；Deposit the 3rd electric insulating material layer；Make the 4th mask layer by lithography, corrode, the function material layer of thin-film deposition second, and peel off to form test electrode, complete device and prepare.It is of the invention to have the advantages that craft precision requires that low, preparation is simple, reliability is high, preparation yields is high, R＆D costs are low and economical and efficient.
Description
Technical field
The present invention relates to field of micro-Na manufacture, more particularly to a kind of level based on corrosion limits oneself of phase transition storage entirely
It is directed at preparation method.This method exceedes the physics of an order of magnitude using the corrosion rate of crystalline phase change material on different substrates
Rule, phase-change material is effectively limited in electrode material gap.This level with autoregistration filling characteristic is limited entirely
The preparation technology of phase transition storage, prepare precision, prepare difficulty, prepare yields, compatibility in terms of have it is very big excellent
More property.
Background technology
Phase transition storage PCRAM (phase change random access memory) is using chalcogenide compound as storage
Medium, converts between crystalline state (low-resistance) and amorphous state (high resistant) by the fuel factor control phase-change material of electric current and realizes information
Write-in and erasing, the reading of information is realized by the change of detection storage region resistance.PCRAM have it is non-volatile, it is and current
Most memory is compared, with device size is small, low in energy consumption, reading speed fast, Flouride-resistani acid phesphatase, can realize multistage store and
Many advantages, such as compatible with existing CMOS technology, be most possibly to replace current FLASH and stored as following main flow
One of semiconductor nonvolatile memory.It is main problem that current phase transition storage faces that operation electric current is excessive, is reduced effective
Phase variable volume can reduce storage power consumption.By the way that phase-change material is restricted between electrode gap, the efficiency of heating surface is improved, is reduced effective
Phase variable volume, is one of current study hotspot so as to reach the purpose for improving erasable speed and reduction power consumption.Phase-change material
GeSbTe alloys are the Typical Representatives of current technology maturation and widely used chalcogenide compound, are used as CD, PRAM more and deposit
Storage media.For horizontal structure, with regard to how by phase-change material between horizontally-opposed electrode gap being consistent property from right
Prepared by standard, be the problem for perplexing research staff always.But, " etch groove-thin-film deposition according to conventional and fill phase transformation material
Material-CMP is polished " thinking prepare the full limiting structure method of phase-change material need the litho machine of high-resolution precision, thin-film deposition and
Etching technics, while also facing, the lifting of technique yields is difficult and process costs remain high and wait predicament.In order to realize phase transformation
Prepared by autoregistration of the material between horizontally-opposed electrode gap, it is proposed that present inventive concept.
The content of the invention
It is an object of the present invention to provide a kind of level based on corrosion limits the autoregistration preparation side of phase transition storage entirely
Method, the preparation method requires low to craft precision, prepares simple, reliability height, preparation yields is high, R＆D costs are low, economy
Efficiently.The present invention is based on wet etching principle, the techniques such as electron beam exposure, dry etching, stripping of arranging in pairs or groups, and multiple material can be achieved
Between the autoregistration of full limitation quantum dot device architecture prepare.
The present invention provides the autoregistration preparation method that a kind of level based on corrosion limits phase transition storage entirely, this method bag
Include：
Step 1：In one layer of erosion-resisting first electric insulating material layer of Grown, in the first electric insulating material layer
Upper spin coating is simultaneously lithographically formed the first mask layer of longitudinal direction；
Step 2：The first function material layer is deposited in the upper surface of the first mask layer of the first electric heating insulating barrier and longitudinal direction, is being gone
Ionized water immersion auxiliary it is lower with cotton balls along the direction wipe samples surface vertical with first longitudinal direction mask layer, peel off and formed and the
The direction of one longitudinal mask layer, the first functional material layer gap consistent with size；
Step 3：On the first function material layer and in the first functional material layer gap, photoetching-thin-film deposition-stripping is utilized
From method prepare one layer of phase-change material layers；
Step 4：Anneal and corrode in alkaline solution, the phase-change material layers above the first function material layer are gone
Remove, form the phase-change material layers nano wire being filled in the first functional material layer gap；
Step 5：In the upper table of the first function material layer, the first functional material layer gap and phase-change material layers nano wire
Face, spin coating is simultaneously lithographically formed the second mask layer and received by second the first function material layer of mask layer dry etching and phase-change material
Rice noodles form the phase-change material quantum dot of horizontally-opposed electrode layer localization to the upper surface of the first electric insulating material layer；
Step 6：The second mask layer is removed, and in the first electric insulating material layer, the first function material layer and phase-change material
The upper surface of quantum dot, deposits the second electric heating insulating barrier；
Step 7：In the upper surface of the second electric insulating material layer, spin coating is simultaneously lithographically formed the 3rd mask layer and hides phase transformation
Material quantum dot, the second electric insulating material layer and the first function material layer to the first electric heating are sequentially etched by the 3rd mask layer
The upper surface of insulation material layer, and remove the 3rd mask layer；
Step 8：In the upper surface of the first electric insulating material layer and the second electric insulating material layer, the 3rd electric heating of deposit is exhausted
Edge material layer；
Step 9：Spin coating simultaneously makes the 4th mask layer by lithography, and it is exhausted by the 4th mask layer to corrode the three, the second electric heating successively
Edge material layer is peeled off to form test electrode to the upper surface of the first function material layer, the function material layer of thin-film deposition second, complete
Prepared into device.
The beneficial effects of the invention are as follows it is utilized under phase-change material GeSbTe alloy crystalline state in the different substrate of electric conductivity
Upper corrosion rate difference exceedes the physics law of an order of magnitude, by depositing one layer of phase-change material above electrode gap, and
Phase-change material is set with the mode of annealing and arrives crystalline state, and phase-change material is filled into electrode gap by wet etching, work
Skill required precision is low, simple to operate, and cost is low, and replicability is strong.
Brief description of the drawings
To further describe the particular technique content of the present invention, with reference to embodiments and after accompanying drawing detailed description such as, its
In：
Fig. 1 is the flow for the autoregistration preparation method that the level based on corrosion that the present invention is provided limits phase transition storage entirely
Figure；
Fig. 2-Fig. 8 is the structural representation of each step of the inventive method.
Embodiment
Referring to Fig. 1, and with reference to refering to shown in Fig. 2 to Fig. 8, the present invention provides a kind of level based on corrosion and limits phase entirely
The autoregistration preparation method of transition storage, this method includes：
Step 1：One layer of erosion-resisting first electric insulating material layer 101A is grown on the substrate 100, it is exhausted in the first electric heating
On edge material layer 101A spin coating and be lithographically formed longitudinal direction the first mask layer 102A.Wherein the material of substrate 100 be silicon, gallium nitride,
Sapphire, carborundum, GaAs or glass etc. is existing and the backing material that occurs later, and the Resistance states of substrate 100 can be with
It is high-impedance state or low resistance state, the thickness of substrate 100 is 1-103um.The material of the first electric insulating material layer 101A is nitrogen
Oxygen compound, nitride or oxide, or the mixture that this several compound is constituted, the first electric insulating material layer 101A
Thickness be 1-103nm, first electric insulating material layer 101A be by sputtering method, vapour deposition method, CVD method,
One or several kinds of preparations in laser-assisted deposition method, atomic layer deposition strategy, thermal oxidation method or metallo-organic decomposition process；
Step 2：The first function material is deposited in the first mask layer 102A of the first electric heating insulating barrier 101A and longitudinal direction upper surface
The bed of material 103, cotton balls is used along the direction wipe samples vertical with first longitudinal direction mask layer 102A under deionized water immersion auxiliary
Surface, peels off and forms the first functional material layer gap 1031 consistent with size with first longitudinal direction mask layer 102A direction, and
Morphology observations are carried out under a scanning electron microscope；First function material layer 103 can be tungsten, titanium nitride, nickel, aluminium, titanium,
Gold, silver, copper, platinum, tungsten nitride, or their alloy, the thickness of the first function material layer 103 is 1-103nm, first work(
Can material layer 103 be by one kind in sputtering method, CVD method, laser-assisted deposition method or atomic layer deposition strategy or
Person is several to be prepared；
Step 3：On the first function material layer 103 and in the first functional material layer gap 1031, " photoetching-thin is utilized
The method of film deposit-stripping " prepares one layer of phase-change material layers 104, and wherein phase-change material layers 104 (1041,1042) can be
GeSbTe alloys, the thickness of phase-change material layers 104 is 1-103nm, and the phase-change material layers 104 (1041,1042) are by splashing
Penetrate in method, CVD method, laser-assisted deposition method, atomic layer deposition strategy, thermal oxidation method, metallo-organic decomposition process
One or several kinds of preparations；
Step 4：Phase-change material is set to crystalline state by annealing, and is corroded in alkaline solution, the crystalline phases on various substrates
Corrosion rate of the change material in alkaline solution is different, and difference exceedes an order of magnitude, controls etching time, it is possible thereby to
Phase-change material positioned at the top of the first function material layer 103 is removed, formation is filled in the first functional material layer gap 1031
Phase-change material layers nano wire 1041；
Step 5：In the first function material layer 103, the first functional material layer gap 1031 and phase-change material layers nano wire
1041 upper surface, spin coating is simultaneously lithographically formed the second mask layer 102B and by second mask layer 102B the first functions of dry etching
The upper surface of material layer 103 and the electric insulating material of phase-change material nano wire 1041 to the first layer 101A, forms the phase of localization
Become material quantum dot 1042, realize prepared by the autoregistration of storeroom quantum dot；
Step 6：The second mask layer 102B is removed, and in the first electric insulating material layer 101A, the first function material layer 103
With the upper surface of phase-change material quantum dot 1042, the second electric heating insulating barrier (not shown) is deposited.The second electric heating insulating barrier can
To be oxide, nitride, nitrogen oxides, the polysilicon of silicon, the second electric heating insulating barrier is by sputtering method, chemical gaseous phase
It is a kind of or several in sedimentation, laser-assisted deposition method, atomic layer deposition strategy, thermal oxidation method, metallo-organic decomposition process
Plant and prepare；
Step 7：In the upper surface of the second electric insulating material layer, spin coating is simultaneously lithographically formed the 3rd mask layer 102C and hidden
Phase-change material quantum dot 1042, the second electric insulating material layer and the first functional material are sequentially etched by the 3rd mask layer 102C
Layer 103 to the first electric insulating materials layer 101A upper surface, and the 3rd mask layer 102C is removed, removing the 3rd mask layer can be with
Dry etching can also be used with organic solvent immersion；
Step 8：In the first electric insulating material layer 101A and the second electric insulating material layer upper surface, the electricity of deposit the 3rd
Heat insulator layer (not shown), the 3rd electric heating insulating barrier can be oxide, nitride, nitrogen oxides, the polycrystalline of silicon
Silicon, the thickness of the 3rd electric heating insulating layer material is 1-103nm, and the 3rd electric heating insulating barrier is by sputtering method, chemical gaseous phase
It is a kind of or several in sedimentation, laser-assisted deposition method, atomic layer deposition strategy, thermal oxidation method, metallo-organic decomposition process
Plant and prepare；
Step 9：Spin coating simultaneously makes the 4th mask layer by lithography, and corrodes by the 4th mask layer (not shown) the 3rd, successively
Two electric insulating materials layer is peeled off to be formed to the upper surface of the first function material layer 102, the function material layer of thin-film deposition second
Electrode 1051 is tested, device is completed and prepares.Second function material layer and test electrode 1051 can be tungsten, titanium nitride, nickel,
Aluminium, titanium, gold, silver, copper, platinum, tungsten nitride, or their alloy, the second function material layer thickness is in 1-103nm, and described second
Function material layer is by sputtering method, CVD method, laser-assisted deposition method, atomic layer deposition strategy, thermal oxidation method, gold
Belong to one or several kinds of preparations in organic matter thermal decomposition method.
Wherein, the material of the first mask layer 102A, the second mask layer 102B, the 3rd mask layer 102C and the 4th mask layer
Material can be PMMA series, AZ series or Zep series, and the thickness and horizontal size of mask are in 1-103nm, first mask layer
102A, the second mask layer 102B, the 3rd mask layer 102C and the 4th mask layer are by after spin coating photoresist, being exposed by electron beam
It is prepared by one or several kinds of collocation in light, X-ray exposure, the exposure of 365nm mercury lamps
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand present disclosure and implement according to this, and it is not intended to limit the scope of the present invention.It is all according to the present invention
The equivalent change or modification that Spirit Essence is made, should all be included within the scope of the present invention.
Claims (9)
1. a kind of level based on corrosion limits the autoregistration preparation method of phase transition storage entirely, this method includes：
Step 1：In one layer of erosion-resisting first electric insulating material layer of Grown, revolved on the first electric insulating material layer
Apply and be lithographically formed the first mask layer of longitudinal direction, the material of the substrate is silicon, gallium nitride, sapphire, carborundum, GaAs or
Glass；
Step 2：The first function material layer is deposited in the upper surface of the first mask layer of the first electric heating insulating barrier and longitudinal direction, in deionization
Water immersion auxiliary is lower to use cotton balls along the direction wipe samples surface vertical with first longitudinal direction mask layer, peels off to be formed and is indulged with first
To the direction of the mask layer first functional material layer gap consistent with size；
Step 3：On the first function material layer and in the first functional material layer gap, photoetching-thin-film deposition-stripping is utilized
Method prepares one layer of phase-change material layers；
Step 4：Anneal and corrode in alkaline solution, phase-change material annealing is arranged to crystalline state, the first functional material will be located at
Phase-change material layers above layer are removed, and form the phase-change material layers nano wire being filled in the first functional material layer gap；
Step 5：In the upper surface of the first function material layer, the first functional material layer gap and phase-change material layers nano wire, rotation
Apply and be lithographically formed the second mask layer and by second the first function material layer of mask layer dry etching and phase-change material nano wire
To the upper surface of the first electric insulating material layer, the phase-change material quantum dot of horizontally-opposed electrode layer localization is formed；
Step 6：The second mask layer is removed, and in the first electric insulating material layer, the first function material layer and phase-change material quantum
The upper surface of point, deposits the second electric heating insulating barrier；
Step 7：In the upper surface of the second electric insulating material layer, spin coating is simultaneously lithographically formed the 3rd mask layer and hides phase-change material
Quantum dot, is sequentially etched the second electric insulating material layer by the 3rd mask layer and the first function material layer to the first electric heating insulate
The upper surface of material layer, and remove the 3rd mask layer；
Step 8：In the upper surface of the first electric insulating material layer and the second electric insulating material layer, the 3rd electric heating insulation material is deposited
The bed of material；
Step 9：Spin coating simultaneously makes the 4th mask layer by lithography, and corrode the three, the second electric heating insulation materials successively by the 4th mask layer
The bed of material is peeled off to form test electrode to the upper surface of the first function material layer, the function material layer of thin-film deposition second, completes device
It is prepared by part.
2. the level according to claim 1 based on corrosion limits the autoregistration preparation method of phase transition storage entirely, wherein
First electric insulating material layer, the second electric insulating material layer, the 3rd electric insulating material layer be oxynitrides, nitride or
Oxide, or oxynitrides, nitride and oxide combination.
3. the level according to claim 2 based on corrosion limits the autoregistration preparation method of phase transition storage entirely, wherein
First electric insulating material layer, the second electric insulating material layer, the 3rd electric insulating material layer be by sputtering method, vapour deposition method,
One in CVD method, laser-assisted deposition method, atomic layer deposition strategy, thermal oxidation method, metallo-organic decomposition process
Plant or several preparations.
4. the level according to claim 1 based on corrosion limits the autoregistration preparation method of phase transition storage entirely, wherein
First mask layer, the second mask layer, the material of the 3rd mask layer and the 4th mask layer are PMMA series, AZ series or Zep series.
5. the level according to claim 1 based on corrosion limits the autoregistration preparation method of phase transition storage entirely, wherein
The material of first function material layer is tungsten, titanium nitride, nickel, aluminium, titanium, gold, silver, copper, platinum or tungsten nitride, or tungsten, titanium nitride, nickel,
Aluminium, titanium, gold, silver, copper, the combination of platinum and tungsten nitride.
6. the level according to claim 5 based on corrosion limits the autoregistration preparation method of phase transition storage entirely, wherein
First function material layer be by sputtering method, vapour deposition method, CVD method, laser-assisted deposition method, atomic layer deposition strategy,
One or several kinds of preparations in thermal oxidation method, metallo-organic decomposition process.
7. the level according to claim 1 based on corrosion limits the autoregistration preparation method of phase transition storage entirely, wherein
The material of phase-change material layers, phase-change material layers nano wire and phase-change material quantum dot is GeSbTe alloys.
8. the level according to claim 7 based on corrosion limits the autoregistration preparation method of phase transition storage entirely, wherein
Phase-change material layers are by sputtering method, CVD method, laser-assisted deposition method, atomic layer deposition strategy, thermal oxidation method, gold
Belong to one or several kinds of preparations in organic matter thermal decomposition method.
9. the level according to claim 1 based on corrosion limits the autoregistration preparation method of phase transition storage entirely, wherein
Second function material layer and test electrode are identical with the first function material layer, are tungsten, titanium nitride, nickel, aluminium, titanium, gold, silver, copper, platinum
Or tungsten nitride, or tungsten, titanium nitride, nickel, aluminium, titanium, gold, silver, copper, the combination of platinum and tungsten nitride.
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| CN105489756B (en) * | 2015-12-03 | 2018-01-12 | 中国科学院半导体研究所 | Preparation method based on the full limitation phase transition storage of level from selective etching |
| CN114854419B (en) * | 2022-04-13 | 2023-09-05 | 华中科技大学 | Alkaline etching solution for wet etching of phase-change material and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1507088A (en) * | 2002-12-13 | 2004-06-23 | ض� | Horizontal phase change memory and producing method thereof |
| CN1750289A (en) * | 2005-07-28 | 2006-03-22 | 复旦大学 | Method for producing nano phase transition storage unit |
| CN101764197A (en) * | 2008-12-24 | 2010-06-30 | 中国科学院半导体研究所 | Method for manufacturing nano-sized phase change memory |
| CN101764195A (en) * | 2008-12-24 | 2010-06-30 | 中国科学院半导体研究所 | Method for making nano-sized phase change memory |
| CN102593356A (en) * | 2012-03-29 | 2012-07-18 | 中国科学院半导体研究所 | Preparation method of horizontal phase change storage irrelevant to photoetching resolution ratio |
| CN103105325A (en) * | 2013-01-31 | 2013-05-15 | 中国科学院半导体研究所 | Method for detecting phase change mechanism of horizontal full-restriction phase change quantum dot |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6791102B2 (en) * | 2002-12-13 | 2004-09-14 | Intel Corporation | Phase change memory |
| US7161167B2 (en) * | 2003-08-04 | 2007-01-09 | Intel Corporation | Lateral phase change memory |
| FR2861887B1 (en) * | 2003-11-04 | 2006-01-13 | Commissariat Energie Atomique | MEMORY MEMBER WITH PHASE CHANGE WITH IMPROVED CYCLABILITY |
| TWI291745B (en) * | 2005-11-30 | 2007-12-21 | Ind Tech Res Inst | Lateral phase change memory with spacer electrodes and method of manufacturing the same |
-
2015
- 2015-07-15 CN CN201510416091.1A patent/CN105070827B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1507088A (en) * | 2002-12-13 | 2004-06-23 | ض� | Horizontal phase change memory and producing method thereof |
| CN1750289A (en) * | 2005-07-28 | 2006-03-22 | 复旦大学 | Method for producing nano phase transition storage unit |
| CN101764197A (en) * | 2008-12-24 | 2010-06-30 | 中国科学院半导体研究所 | Method for manufacturing nano-sized phase change memory |
| CN101764195A (en) * | 2008-12-24 | 2010-06-30 | 中国科学院半导体研究所 | Method for making nano-sized phase change memory |
| CN102593356A (en) * | 2012-03-29 | 2012-07-18 | 中国科学院半导体研究所 | Preparation method of horizontal phase change storage irrelevant to photoetching resolution ratio |
| CN103105325A (en) * | 2013-01-31 | 2013-05-15 | 中国科学院半导体研究所 | Method for detecting phase change mechanism of horizontal full-restriction phase change quantum dot |
Non-Patent Citations (2)
| Title |
|---|
| A self-aligned process for phase-change material nanowire confined within metal electrode nanogap;Huili Ma et al.;《Applied Physics Letters》;20111025;第99卷(第17期);第173107-(103)页 * |
| Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application;Jiayong Zhang et al.;《Applied Physics Letters》;20100524;第96卷(第21期);第213505-(1-3)页 * |
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