CN101488556A - Preparation for high density phase-changing memory - Google Patents
Preparation for high density phase-changing memory Download PDFInfo
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- CN101488556A CN101488556A CNA2009100460894A CN200910046089A CN101488556A CN 101488556 A CN101488556 A CN 101488556A CN A2009100460894 A CNA2009100460894 A CN A2009100460894A CN 200910046089 A CN200910046089 A CN 200910046089A CN 101488556 A CN101488556 A CN 101488556A
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Abstract
The invention discloses a method for preparing a phase transition storage with high density, comprising the following steps: preparing a nanometer electrode array and preparing a photoetching alignment mark; wherein the nanometer electrode array is prepared by depositing and setting chemical elements by focused ion beam; the photoetching alignment mark is prepared by depositing and setting chemical elements by focused ion beam. In the invention, the electrode array is prepared by depositing platina by the focused ion beam, which leads the density of the electrode array to reach above 10<10>/cm<2>; on the basis, a feasible method for studying the mutual effect of adjacent units is provided.
Description
Technical field
The invention belongs to microelectronics technology, relate to a kind of preparation method of memory, relate in particular to a kind of preparation method of high-density phase-change memory.
Background technology
The phase transition storage technology is based on that conception that phase-change thin film that Ovshinsky proposes at beginning of the seventies late 1960s can be applied to the phase change memory medium sets up, and is the memory device of a kind of low price, stable performance.Phase transition storage can be made on the silicon wafer substrate, and its critical material is recordable phase-change thin film, heating electrode material, heat-insulating material and extraction electrode material etc.The basic principle of phase transition storage is to utilize electric impulse signal to act on the device cell, make phase-change material between amorphous state and polycrystalline attitude, reversible transition take place, low-resistance when high resistant during by the resolution amorphous state and polycrystalline attitude can realize writing, wipe and read operation of information.
Phase transition storage owing to have reads at a high speed, high erasable number of times, non-volatile, advantages such as component size is little, strong motion low in energy consumption, anti-and radioresistance, is thought flash memories that most possible replacement is present by international semiconductor TIA and becomes following memory main product and become the device of commercial product at first.
Now, the research of memory develops towards the direction of high speed, high density, low-power consumption always.Mechanism's great majority of being engaged at present the phase transition storage R﹠D work in the world are major companies of semicon industry, and the research focus launches around its device technology mostly: the physical mechanism research of device, comprise the operating current that how to reduce device, and promptly reduce power consumption; Device architecture design and the research of storage mechanism etc.; The manufacturing process research of high-density device array comprises the nanoscale problem that how to realize device cell, the technological problems of high-density device chip, the Problem of Failure of device cell etc.
In traditional semiconductor technology, the preparation of high density unit component depends on photoetching technique, and the limit index of photoetching has determined the minimum dimension of device cell; Because the restriction that is subjected on the preparation technology of influence for high-density device of proximity effect in the photoetching is more.
Summary of the invention
Technical problem to be solved by this invention is: a kind of preparation method of high-density phase-change memory is provided, and electrod-array density can reach 10
10/ cm
2More than.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of preparation method of high-density phase-change memory, this method comprise the step of preparation nano-electrode array; The method of utilizing focused ion beam deposition to set chemical element prepares the nano-electrode array.
As a preferred embodiment of the present invention, described method also comprises the preparation process of photoetching alignment mark; The method of utilizing focused ion beam deposition to set chemical element prepares photoetching alignment mark.Further, utilize the method for focused ion beam deposition platinum to prepare photoetching alignment mark.Four square compositions that are shaped as cross hairs and link to each other of described mark with cross hairs.
As a preferred embodiment of the present invention, utilize the method for focused ion beam deposition platinum to prepare the nano-electrode array.
As a preferred embodiment of the present invention, described method also comprises the deposition step of phase-change material; The deposition step of phase-change material utilizes magnetron sputtering to finish in conjunction with peeling off; The double-deck electron sensitive resist of spin coating on substrate, the resist THICKNESS CONTROL is 200～300nm; Carry out alignment procedure, then electron beam exposure forms the deposition region of phase-change material; Magnetron sputtering deposition is set the phase-change material of thickness; Soak setting-up time with acetone, and photoresist and the phase-change material that deposits above thereof are removed.
As a preferred embodiment of the present invention, before the step of preparation bottom dielectric layer, also comprise the cleaning silicon chip step:
Silicon chip is put into first solution boiled 3-10 minute, cooling deionized water rinsing 1-5 minute, then dries up with nitrogen; Wherein, described first solution is the mixed liquor of ammoniacal liquor, hydrogen peroxide, deionized water, and the ratio of ammoniacal liquor, hydrogen peroxide, deionized water is 1:2:5;
Silicon chip is put into second solution boiled 3-10 minute, cooling deionized water rinsing 1-5 minute, then dries up with nitrogen; Wherein, described second solution is the mixed liquor of hydrochloric acid, hydrogen peroxide, deionized water, and the ratio of hydrochloric acid, hydrogen peroxide, deionized water is 1:2:5;
Behind the cleaning silicon chip, silicon chip is toasted the moisture that 10min-60min removes the surface in 100 ℃-200 ℃ baking oven.
A kind of preparation method of high-density phase-change memory, these method following steps:
The step of preparation bottom dielectric layer;
The step of preparation bottom electrode;
The step of preparation marker graphic;
The step of preparation nano-electrode array, the method for utilizing focused ion beam deposition to set chemical element prepares the nano-electrode array;
The step of preparation phase-change material;
The top layer electrode draw step;
Top layer silica deposition step.
As a preferred embodiment of the present invention, utilize the method for focused ion beam deposition platinum to prepare the nano-electrode array.
As a preferred embodiment of the present invention, in the step of preparation marker graphic, utilize the method for focused ion beam deposition platinum to prepare photoetching alignment mark.
Beneficial effect of the present invention is: the present invention utilizes focused ion beam deposition platinum to prepare electrod-array, makes the density of electrod-array can reach 10
10/ cm
2More than; Provide a kind of feasible method for influencing each other between the research adjacent cells on this basis.
The scaled down cell size is the remarkable advantage of phase transition storage with respect to the other types memory, under the situation that cell size is constantly dwindled, to become particularly important to the interactional research between the adjacent cells, the present invention provides a kind of effective method for the research.In the preparation of unit component, learn through overtesting: in the time of the sediment phase change material, be the center with the platinum electrode, the growth phase of phase-change material is very fast for other zones; This explanation platinum electrode has facilitation for the growth of phase-change material, shows that also phase-change material is better than the contact of other electrode materials with the contact of platinum simultaneously; In the research of phase transition storage, be on the one hand on technology realizes, be the research of phase-change material performance on the other hand, for the research of the used material property of high-density phase-change memory, the present invention also provides a kind of effective means for it.
Description of drawings
Fig. 1 is the structural representation of bottom dielectric layer preparation back phase transition storage.
Fig. 2 is the structural representation of bottom electrode preparation back phase transition storage.
Fig. 3 is the structural representation of marker graphic preparation back phase transition storage.
Fig. 4 is the structural representation of electrod-array preparation back phase transition storage.
Fig. 5 is the structural representation of phase-change material deposition back phase transition storage.
Fig. 6 is the structural representation of drawing phase transition storage behind the top layer electrode.
Embodiment
Describe the preferred embodiments of the present invention in detail below in conjunction with accompanying drawing.
Embodiment one
See also Fig. 1 to Fig. 6, the present invention discloses a kind of preparation method of high-density phase-change memory, mainly comprises the steps:
[step 1] silicon chip substrate is cleaned.
With silicon chip put into 1# liquid (mixture of ammoniacal liquor, hydrogen peroxide, deionized water, ammoniacal liquor: hydrogen peroxide: boiled 5 minutes in the deionized water=1:2:5), cooling, deionized water rinsing 3 minutes, nitrogen dries up then.Main effect: greasy dirt and the bulky grain of removing silicon face.
With silicon chip put into 2# liquid (mixture of hydrochloric acid, hydrogen peroxide, deionized water, hydrochloric acid: hydrogen peroxide: clean in the deionized water=1:2:5), method is with the cleaning method of above-mentioned 1# liquid; Main effect is a metal ion of removing silicon chip surface.
Silicon chip is toasted the moisture that 30min removes the surface in 120 ℃ baking oven.
The preparation of [step 2] bottom dielectric layer.
The method of utilizing chemical vapour deposition (CVD) deposition one layer thickness on the clean silicon chip of aforementioned processing is the SixN (as shown in Figure 1) of 300～500nm.
The preparation of [step 3] bottom electrode.
Utilize the method for magnetron sputtering to form bottom electrode Al/Ti/TiN, its corresponding thickness is controlled to be 150nm/100nm/50nm (as shown in Figure 2).
The preparation of [step 4] marker graphic.
Utilize focused ion beam deposition platinum to prepare mark.Four square compositions that are shaped as cross hairs and are attached thereto of mark; The live width of cross hairs is 200nm, and length is 2 μ m; Square figure is that length is the square of 1 μ m; Mark layer thickness is 200nm (as shown in Figure 3).
The preparation of [step 5] nano-electrode array.
Utilize the focused ion beam deposition platinum electrode.The diameter of electrode is controlled to be below the 50nm, and electrode height is below the 150nm, and the cycle of electrod-array is below the 100nm, and the unit number of electrod-array was 10 * 10 (as shown in Figure 4).
The preparation of [step 6] phase-change material.
Utilize magnetron sputtering in conjunction with the method sediment phase change material of peeling off.The double-deck electron sensitive resist of spin coating positivity, THICKNESS CONTROL is 300nm, the careful accurate alignment procedure of carrying out, then electric lithography forms the deposition region of phase-change material, and area size is 2 * 2 μ m; Magnetron sputtering deposition thickness is the phase-change material of 100nm, the phase-change material (as shown in Figure 5) that acetone soaks 12 hours stripping photoresists and deposits above.
Drawing of [step 7] top layer electrode.
The deposition of top layer electrode utilizes the focused ion beam deposition alloy platinum material to finish.The live width of electrode is controlled to be below the 100nm, and the thickness of electrode material is 100nm (as shown in Figure 6).
[step 8] top layer silica deposition.
The deposition of top layer heat-insulating protective layer silica utilizes the ion beam depositing method to finish.The THICKNESS CONTROL of silica is 200nm.
In sum, the preparation method of high-density phase-change memory of the present invention utilizes focused ion beam deposition platinum to prepare electrod-array, makes the density of electrod-array can reach 10
10/ cm
2More than; Provide a kind of feasible method for influencing each other between the research adjacent cells on this basis.
The scaled down cell size is the remarkable advantage of phase transition storage with respect to the other types memory, under the situation that cell size is constantly dwindled, to become particularly important to the interactional research between the adjacent cells, the present invention provides a kind of effective method for the research.In the preparation of unit component, learn through overtesting: in the time of the sediment phase change material, be the center with the platinum electrode, the growth phase of phase-change material is very fast for other zones; This explanation platinum electrode has facilitation for the growth of phase-change material, shows that also phase-change material is better than the contact of other electrode materials with the contact of platinum simultaneously; In the research of phase transition storage, be on the one hand on technology realizes, be the research of phase-change material performance on the other hand, for the research of the used material property of high-density phase-change memory, the present invention also provides a kind of effective means for it.
Here description of the invention and application is illustrative, is not to want with scope restriction of the present invention in the above-described embodiments.Here the distortion of disclosed embodiment and change are possible, and the various parts of the replacement of embodiment and equivalence are known for those those of ordinary skill in the art.Those skilled in the art are noted that under the situation that does not break away from spirit of the present invention or substantive characteristics, and the present invention can be with other forms, structure, layout, ratio, and realize with other elements, material and parts.Under the situation that does not break away from the scope of the invention and spirit, can carry out other distortion and change here to disclosed embodiment.
Claims (10)
1, a kind of preparation method of high-density phase-change memory is characterized in that: this method comprises the step of preparation nano-electrode array;
The method of utilizing focused ion beam deposition to set chemical element prepares the nano-electrode array.
2, the preparation method of high-density phase-change memory according to claim 1 is characterized in that:
Described method also comprises the preparation process of photoetching alignment mark;
The method of utilizing focused ion beam deposition to set chemical element prepares photoetching alignment mark.
3, the preparation method of high-density phase-change memory according to claim 2 is characterized in that:
Utilize the method for focused ion beam deposition platinum to prepare photoetching alignment mark.
4, according to the preparation method of claim 2 or 3 described high-density phase-change memories, it is characterized in that:
Four square compositions that are shaped as cross hairs and link to each other of described mark with cross hairs.
5, the preparation method of high-density phase-change memory according to claim 1 is characterized in that:
Utilize the method for focused ion beam deposition platinum to prepare the nano-electrode array.
6, the preparation method of high-density phase-change memory according to claim 1 is characterized in that:
Described method also comprises the deposition step of phase-change material;
The deposition step of phase-change material utilizes magnetron sputtering to finish in conjunction with peeling off;
The double-deck electron sensitive resist of spin coating on substrate, the resist THICKNESS CONTROL is 200～300nm;
Carry out alignment procedure, then electron beam exposure forms the deposition region of phase-change material;
Magnetron sputtering deposition is set the phase-change material of thickness;
Soak setting-up time with acetone, and photoresist and the phase-change material that deposits above thereof are removed.
7, the preparation method of high-density phase-change memory according to claim 1 is characterized in that:
Before the step of preparation bottom dielectric layer, also comprise the cleaning silicon chip step:
Silicon chip is put into first solution boiled 3-10 minute, cooling deionized water rinsing 1-5 minute, then dries up with nitrogen; Wherein, described first solution is the mixed liquor of ammoniacal liquor, hydrogen peroxide, deionized water, and the ratio of ammoniacal liquor, hydrogen peroxide, deionized water is 1:2:5;
Silicon chip is put into second solution boiled 3-10 minute, cooling deionized water rinsing 1-5 minute, then dries up with nitrogen; Wherein, described second solution is the mixed liquor of hydrochloric acid, hydrogen peroxide, deionized water, and the ratio of hydrochloric acid, hydrogen peroxide, deionized water is 1:2:5;
Behind the cleaning silicon chip, silicon chip is toasted the moisture that 10min-60min removes the surface in 100 ℃-200 ℃ baking oven.
8, a kind of preparation method of high-density phase-change memory is characterized in that: these method following steps:
The step of preparation bottom dielectric layer;
The step of preparation bottom electrode;
The step of preparation marker graphic;
The step of preparation nano-electrode array, the method for utilizing focused ion beam deposition to set chemical element prepares the nano-electrode array;
The step of preparation phase-change material;
The top layer electrode draw step;
Top layer silica deposition step.
9, the preparation method of high-density phase-change memory according to claim 8 is characterized in that:
Utilize the method for focused ion beam deposition platinum to prepare the nano-electrode array.
10, the preparation method of high-density phase-change memory according to claim 8 is characterized in that:
In the step of preparation marker graphic, utilize the method for focused ion beam deposition platinum to prepare photoetching alignment mark.
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|---|---|---|---|
| CNA2009100460894A CN101488556A (en) | 2009-02-11 | 2009-02-11 | Preparation for high density phase-changing memory |
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|---|---|---|---|
| CNA2009100460894A CN101488556A (en) | 2009-02-11 | 2009-02-11 | Preparation for high density phase-changing memory |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101763452B (en) * | 2010-01-07 | 2011-12-21 | 中国科学院上海微系统与信息技术研究所 | Simulation method of phase-change memory |
| CN101996935B (en) * | 2009-08-19 | 2012-11-28 | 中国科学院半导体研究所 | Production method of nano metal plug electrode array applied to conductive bridge memory |
-
2009
- 2009-02-11 CN CNA2009100460894A patent/CN101488556A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996935B (en) * | 2009-08-19 | 2012-11-28 | 中国科学院半导体研究所 | Production method of nano metal plug electrode array applied to conductive bridge memory |
| CN101763452B (en) * | 2010-01-07 | 2011-12-21 | 中国科学院上海微系统与信息技术研究所 | Simulation method of phase-change memory |
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Open date: 20090722 |