WO2016107295A1 - Method for removing film on leadless gilt plate - Google Patents

Method for removing film on leadless gilt plate Download PDF

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Publication number
WO2016107295A1
WO2016107295A1 PCT/CN2015/094366 CN2015094366W WO2016107295A1 WO 2016107295 A1 WO2016107295 A1 WO 2016107295A1 CN 2015094366 W CN2015094366 W CN 2015094366W WO 2016107295 A1 WO2016107295 A1 WO 2016107295A1
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Prior art keywords
dry film
circuit board
gold
film
etching
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PCT/CN2015/094366
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French (fr)
Chinese (zh)
Inventor
谢添华
卢汝烽
李志东
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广州兴森快捷电路科技有限公司
深圳市兴森快捷电路科技股份有限公司
宜兴硅谷电子科技有限公司
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Application filed by 广州兴森快捷电路科技有限公司, 深圳市兴森快捷电路科技股份有限公司, 宜兴硅谷电子科技有限公司 filed Critical 广州兴森快捷电路科技有限公司
Priority to KR1020167024536A priority Critical patent/KR20160141709A/en
Publication of WO2016107295A1 publication Critical patent/WO2016107295A1/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0023Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0076Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/281Applying non-metallic protective coatings by means of a preformed insulating foil
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0264Peeling insulating layer, e.g. foil, or separating mask
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0502Patterning and lithography
    • H05K2203/0508Flood exposure

Definitions

  • the invention relates to the technical field of printed circuit boards, in particular to a method for film unloading of leadless gold plate.
  • TLP Tailless Process
  • Conductive medium with the excellent plating resistance of special dry film, achieves the purpose of gold plating in gold fingers or other welding areas.
  • the vacuum film method is generally adopted, and the vacuum film has a strong fluidity for the dry film, and the dry film is subjected to temperature and pressure.
  • the function fully fills the line gap under vacuum and will also fill the micro-via.
  • the dry film flowing into the pores is sufficiently exposed to light after exposure, and is difficult to be removed at the time of film detachment, especially after secondary dry film attachment and double exposure, dry film polymerization is more sufficient, and it is difficult to perform a film detaching operation.
  • the dry film in the through hole is removed, and the through hole is not completely removed.
  • the embodiment of the invention is achieved by the method for unrolling a lead-free gold plate, the method comprising:
  • the circuit board after the line is fabricated is copper-plated
  • the exposure energy is lowered, and the first development and flashing are performed;
  • the circuit board is plated with gold
  • the reducing the exposure energy is specifically:
  • the exposure energy ranges from 30 to 40 mj
  • mj is the energy unit of millijoule.
  • the window opening above the through hole in the circuit board is specifically:
  • the copper plate of the circuit board after the line fabrication is specifically:
  • the thickness of the copper on the circuit board is 0.5 to 1 ⁇ m.
  • the attached resist dry film and the anti-gold plating dry film are performed under a vacuum environment.
  • the specific parameters of the vacuum environment are:
  • the vacuum laminating temperature is 60-90 ° C
  • the vacuuming time is 30 to 50 s
  • the pressure is 0.4 to 0.6 MPa
  • the pressing time is 20 to 50 s.
  • the TLP micro-via products are completely eliminated, which greatly improves the production efficiency and product yield.
  • the above-described film-removing method is applicable to through-hole wiring boards of all TLP processes.
  • FIG. 1 is a flow chart showing an implementation of a method for removing a lead-free gold-plated plate according to an embodiment of the present invention
  • FIG. 2 is a state diagram of a leadless gold plated ER film according to an embodiment of the present invention.
  • FIG. 3 is a state diagram of an ER exposure of a leadless gold-plated plate according to an embodiment of the present invention.
  • FIG. 4 is a state diagram of exposure and development of a leadless gold plated AR according to an embodiment of the present invention.
  • FIG. 5 is a state diagram of a lead-free gold plated plate after gold plating according to an embodiment of the present invention.
  • FIG. 6 is a state diagram of the leadless gold plate after the film is removed according to an embodiment of the present invention.
  • FIG. 1 is a flowchart showing an implementation process of a method for removing a lead-free gold-plated plate provided by an embodiment of the present invention, and the details are as follows:
  • step S101 the circuit board after the line fabrication is made to sink copper
  • the copper is deposited by a chemical deposition method on the surface of the substrate to form a thin layer of copper.
  • the thickness of the whole plate of copper is between 0.5 and 1 ⁇ m, which ensures that the circuit is turned on without affecting the circuit of the board.
  • step S102 an anti-etching dry film pre-treatment is performed, and a resist dry film is attached to a surface portion corresponding to the anti-etching copper surface;
  • the anti-etching dry film is attached to a portion of the copper-clad layer that needs to be prevented from being etched.
  • the anti-etching dry film can protect the copper-plated layer that conducts in the TLP process, ensuring good continuity of the circuit.
  • Attaching ER (Etch Resist) to the board requires vacuuming.
  • the vacuum laminating temperature is 60 to 90 ° C
  • the vacuuming time is controlled to 30 to 50 s
  • the pressure is 0.4 to 0.6 MPa
  • the pressing time is 20 to 50 s.
  • the vacuum film gives the dry film a strong fluidity, so that the dry film sufficiently fills the line gap (see Fig. 2).
  • the vacuum film is widely used in the package substrate, and the dry film is fully filled into the line gap by vacuuming and hot pressing, and is also filled into the micro through hole, and the dry film will play a protective role in the resist process.
  • step S103 when the anti-etching dry film is exposed, the exposure energy is lowered, and the first development and flashing are performed;
  • the first development and flash erosion can be ER development and ER flashing.
  • flash etching is to expose the lines that need to be plated.
  • the flashing operation is the same as the existing etching operation, except that the etching time is relatively short, mainly due to the thin copper layer that needs to be etched away.
  • the exposure energy is typically 70 mj (milli-joule), where exposure energy ranges from 30 to 40 mj. Exposure in this range creates favorable conditions for the reaction between the dry film in the through-hole and the film-removing solution, so that the film-removing effect is better.
  • step S104 attaching a corresponding anti-gold plating portion of the circuit board to the anti-gold plating dry film
  • the AR Au Resist
  • the line gap including the micro through hole, by the vacuum filming method.
  • the through hole usually does not require gold plating, and the anti-gold plating dry film can prevent the gold plating from being applied to the through hole.
  • step S105 when the anti-gold plating dry film exposure is performed, a window is opened above the through hole in the circuit board;
  • the fenestration design above the through hole may prevent exposure at the corresponding through hole and avoid secondary polymerization of the dry film in the hole.
  • dry film polymerization is more sufficient, making it difficult to remove the dry film.
  • the exposure may be blocked in the design file corresponding to the circuit board, and the corresponding position of the through hole is not exposed; in other embodiments of the present invention, the exposure may be prevented by other conventional means in the industry. Alternative.
  • step S106 after performing the second development, the circuit board is plated with gold
  • the second development may be AR development (see Fig. 4(b)), and then the wiring board is plated with gold to resist oxidation (see Fig. 5).
  • step S107 the wiring board is peeled off and a second flash is performed.
  • the dry film of the surface is not completely polymerized, thereby reducing the difficulty of film detachment, thereby completely removing the dry film. purpose.
  • the method for removing the lead-free gold-plated plate is provided, and the production efficiency of the ER exposure is improved by reducing the exposure energy during the ER exposure, and the single-process production time is shortened by 30%, and then
  • the window opening design at the through hole during AR exposure completely solves the problem of unsatisfactory film removal of TLP micro-via products, greatly improving production efficiency and product yield, and is suitable for through-hole circuit boards of all TLP processes.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

A method for removing a film on a leadless gilt plate comprises: electrolessly plating copper on a circuit board after circuit manufacturing is performed; after an anti-etching dry film pretreatment is performed, attaching an anti-etching dry film to an anti-etching position on a surface layer of an anti-etching electroless plating copper; when the anti-etching dry film is exposed, reducing an exposure energy, and performing a first development and a first flash rusting; attaching an anti-gild dry film to an anti-gild position on the circuit board; when the anti-gild dry film is exposed, opening a window above a through hole in the circuit board; after the second development is performed, electrically plating gold on the circuit board; removing the film on the circuit board and performing a second flash rusting. By reducing the exposure energy when the anti-etching dry film (ER) is exposed, the production efficiency of the ER exposure is improved, and the production time is shortened by 30%. The design of opening a window above the through hole completely resolves a problem that film removal cannot be performed completely on a TLP micro-through hole product, and thereby greatly improving the production efficiency and the product defect-free rate. The method is suitable for all through hole circuit boards of the TLP procedure.

Description

一种无引线镀金板退膜方法Lead-free gold-plated plate film-removing method 技术领域Technical field
本发明涉及印制线路板技术领域,特别是涉及一种无引线镀金板退膜方法。The invention relates to the technical field of printed circuit boards, in particular to a method for film unloading of leadless gold plate.
背景技术Background technique
随着电子产品向轻、薄、小的方向发展,电子元器件也向高密度、小型化方向进步,无引线镀金技术(Tailless Process,TLP)在封装基板应用广泛,该技术利用沉铜层作为导电介质,以专用干膜的优良抗镀性,达到在金手指或其他焊接区域镀金的目的。With the development of electronic products in the direction of light, thin and small, electronic components are also advancing toward high density and miniaturization. The Tailless Process (TLP) is widely used in package substrates, which utilizes a copper-clad layer. Conductive medium, with the excellent plating resistance of special dry film, achieves the purpose of gold plating in gold fingers or other welding areas.
无引线镀金板在贴附抗镀金干膜时,为了保证线路间隙的填充性避免渗金短路,通常采用真空贴膜法,真空贴膜使干膜具有较强的流动性,干膜受温度和压力的作用在真空状态下充分填充线路间隙,同时也将填入微通孔内。流入孔内的干膜经过曝光充分发生光聚合反应后,在退膜时难以褪除,特别是经过二次干膜贴附和二次曝光后,干膜聚合更加充分,进行退膜操作后,难以将通孔内的干膜退除,导致通孔退膜不尽。In the lead-free gold-plated plate, when the anti-gold plating dry film is attached, in order to ensure the filling of the line gap to avoid the short circuit of the gold leakage, the vacuum film method is generally adopted, and the vacuum film has a strong fluidity for the dry film, and the dry film is subjected to temperature and pressure. The function fully fills the line gap under vacuum and will also fill the micro-via. The dry film flowing into the pores is sufficiently exposed to light after exposure, and is difficult to be removed at the time of film detachment, especially after secondary dry film attachment and double exposure, dry film polymerization is more sufficient, and it is difficult to perform a film detaching operation. The dry film in the through hole is removed, and the through hole is not completely removed.
发明内容Summary of the invention
基于此,有必要针对无引线镀金板上的干膜在二次曝光后,聚合更加充分,难以将通孔内的干膜褪除,导致通孔退膜不尽,而提供一种无引线镀金板退膜方法。Based on this, it is necessary for the dry film of the lead-free gold-plated plate to be more fully polymerized after the double exposure, and it is difficult to remove the dry film in the through hole, resulting in the film being uncoated, and providing a leadless gold plating. Plate peeling method.
本发明实施例是这样实现的,一种无引线镀金板退膜方法,所述方法包括:The embodiment of the invention is achieved by the method for unrolling a lead-free gold plate, the method comprising:
将进行线路制作后的线路板沉铜;The circuit board after the line is fabricated is copper-plated;
进行抗蚀刻干膜前处理后,并在对应抗蚀刻沉铜表层部位贴附抗蚀干膜;After the anti-etching dry film pre-treatment, and attaching a resist dry film to the surface portion corresponding to the anti-etching copper;
在抗蚀刻干膜曝光时,降低曝光能量,并进行第一次显影和闪蚀;When the anti-etching dry film is exposed, the exposure energy is lowered, and the first development and flashing are performed;
将所述线路板中相应抗镀金的部位贴附抗镀金干膜;Attaching a corresponding anti-gold plating portion of the circuit board to the anti-gold plating dry film;
当进行抗镀金干膜曝光时,在所述线路板中通孔的上方开窗;When performing an anti-gold plating dry film exposure, opening a window above the through hole in the circuit board;
进行第二次显影后,将所述线路板电镀金; After performing the second development, the circuit board is plated with gold;
将所述线路板退膜并经行第二次闪蚀Depressing the circuit board and performing a second flash
在其中一个实施例中,所述降低曝光能量具体为:In one embodiment, the reducing the exposure energy is specifically:
曝光能量范围在30~40mj之间;The exposure energy ranges from 30 to 40 mj;
其中,mj为能量单位毫焦。Where mj is the energy unit of millijoule.
在其中一个实施例中,所述当进行抗镀金干膜曝光时,在所述线路板中的通孔上方开窗具体为:In one embodiment, when the anti-gold plating dry film exposure is performed, the window opening above the through hole in the circuit board is specifically:
在所述线路板中的通孔上方阻止曝光。Exposure is prevented above the vias in the board.
在其中一个实施例中,所述将进行线路制作后的线路板沉铜具体为:In one embodiment, the copper plate of the circuit board after the line fabrication is specifically:
对线路板沉铜厚度为0.5~1μm。The thickness of the copper on the circuit board is 0.5 to 1 μm.
在其中一个实施例中,所述贴附抗蚀干膜和抗镀金干膜在真空环境下进行。In one of the embodiments, the attached resist dry film and the anti-gold plating dry film are performed under a vacuum environment.
在其中一个实施例中,所述真空环境的具体参数为:In one of the embodiments, the specific parameters of the vacuum environment are:
真空压膜温度为60-90℃,抽真空时间为30~50s,压力为0.4~0.6MPa,加压时间为20~50s。The vacuum laminating temperature is 60-90 ° C, the vacuuming time is 30 to 50 s, the pressure is 0.4 to 0.6 MPa, and the pressing time is 20 to 50 s.
上述无引线镀金板退膜方法具有以下有益效果:The above method for stripping the gold-plated plate without lead wire has the following beneficial effects:
首先,通过降低ER(Etch Resist,抗蚀刻干膜)曝光时的曝光能量,提升了ER曝光的生产效率,单流程生产时间缩短30%。First, by reducing the exposure energy of ER (Etch Resist, anti-etch dry film) exposure, the production efficiency of ER exposure is improved, and the single-process production time is shortened by 30%.
其次,通过在AR(Au Resist,抗镀金干膜)曝光时通孔处开窗设计彻底解决了TLP微通孔产品的退膜不尽,大大提升了生产效率和产品良率。Secondly, through the opening window design of the AR (Au Resist, anti-gold plating dry film), the TLP micro-via products are completely eliminated, which greatly improves the production efficiency and product yield.
另外,上述退膜方法适用于所有TLP流程的通孔线路板。In addition, the above-described film-removing method is applicable to through-hole wiring boards of all TLP processes.
附图说明DRAWINGS
图1为本发明实施例提供的无引线镀金板退膜方法的实现流程图;FIG. 1 is a flow chart showing an implementation of a method for removing a lead-free gold-plated plate according to an embodiment of the present invention; FIG.
图2为本发明实施例提供的无引线镀金板ER贴膜的状态图;2 is a state diagram of a leadless gold plated ER film according to an embodiment of the present invention;
图3为本发明实施例提供的无引线镀金板ER曝光的状态图;3 is a state diagram of an ER exposure of a leadless gold-plated plate according to an embodiment of the present invention;
图4为本发明实施例提供的无引线镀金板AR曝光和显影的状态图;4 is a state diagram of exposure and development of a leadless gold plated AR according to an embodiment of the present invention;
图5为本发明实施例提供的无引线镀金板电镀金后的状态图;FIG. 5 is a state diagram of a lead-free gold plated plate after gold plating according to an embodiment of the present invention; FIG.
图6为本发明实施例提供的无引线镀金板退膜后的状态图。 FIG. 6 is a state diagram of the leadless gold plate after the film is removed according to an embodiment of the present invention.
具体实施方式detailed description
为了使本发明的上述特征及有益效果能够更加明显易懂,下面结合实施例对本发明做详细的阐述,需要说明的是,本文所使用的术语“第一”、“第二”、“第三”、“垂直”、“水平”、“上方”、“下方”以及类似的表述只是为了起说明目的,并不表示是唯一的实施方式。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the present invention will be described in detail below with reference to the embodiments, which are to be described herein, the terms "first", "second", "third" The words "vertical", "horizontal", "above", "below" and the like are for illustrative purposes only and are not meant to be the only embodiment.
为了说明本发明所述的技术方案,下面通过具体实施例来进行说明。In order to explain the technical solution described in the present invention, the following description will be made by way of specific embodiments.
图1示出了本发明实施例提供的无引线镀金板退膜方法的实现流程,具体详述如下:FIG. 1 is a flowchart showing an implementation process of a method for removing a lead-free gold-plated plate provided by an embodiment of the present invention, and the details are as follows:
在步骤S101中,将进行线路制作后的线路板沉铜;In step S101, the circuit board after the line fabrication is made to sink copper;
在本发明实施例中,沉铜采用化学沉积法在基材表面沉积一层薄铜,起线路导通作用。整版沉铜的厚度为0.5~1μm之间,即确保电路导通,又不会对板面的线路造成影响。In the embodiment of the present invention, the copper is deposited by a chemical deposition method on the surface of the substrate to form a thin layer of copper. The thickness of the whole plate of copper is between 0.5 and 1 μm, which ensures that the circuit is turned on without affecting the circuit of the board.
在步骤S102中,进行抗蚀刻干膜前处理,并在对应抗蚀刻沉铜表层部位贴附抗蚀干膜;In step S102, an anti-etching dry film pre-treatment is performed, and a resist dry film is attached to a surface portion corresponding to the anti-etching copper surface;
在本发明实施例中,将抗蚀刻干膜贴附于需要防止被蚀刻的沉铜层部位。抗蚀刻干膜,在TLP流程中能够保护起导通作用的沉铜层,保证线路良好的导通性。In the embodiment of the present invention, the anti-etching dry film is attached to a portion of the copper-clad layer that needs to be prevented from being etched. The anti-etching dry film can protect the copper-plated layer that conducts in the TLP process, ensuring good continuity of the circuit.
在线路板上贴附ER(Etch Resist,抗蚀刻干膜)需要在真空环境下进行。真空压膜温度为60~90℃,抽真空时间控制为30~50s,压力为0.4~0.6MPa,加压时间为20~50s。通过该温度和压力的作用,真空贴膜使该干膜具有较强的流动性,使该干膜充分填充线路间隙(参见图2)。真空贴膜广泛应用于封装基板,通过抽真空、热压的方式使该干膜充分填充线路间隙,同时也填入微通孔内,干膜将在抗蚀过程中起保护作用。Attaching ER (Etch Resist) to the board requires vacuuming. The vacuum laminating temperature is 60 to 90 ° C, the vacuuming time is controlled to 30 to 50 s, the pressure is 0.4 to 0.6 MPa, and the pressing time is 20 to 50 s. Through the action of the temperature and pressure, the vacuum film gives the dry film a strong fluidity, so that the dry film sufficiently fills the line gap (see Fig. 2). The vacuum film is widely used in the package substrate, and the dry film is fully filled into the line gap by vacuuming and hot pressing, and is also filled into the micro through hole, and the dry film will play a protective role in the resist process.
在步骤S103中,在抗蚀刻干膜曝光时,降低曝光能量,并进行第一次显影和闪蚀; In step S103, when the anti-etching dry film is exposed, the exposure energy is lowered, and the first development and flashing are performed;
ER曝光时降低曝光能量,能够使进入通孔内的干膜不充分聚合,为通孔内干膜与退膜药水反应创造有利的条件(参见图3)。第一次显影和闪蚀可以为ER显影和ER闪蚀。闪蚀的目的在于将需要镀金的线路露出,闪蚀操作与现有的蚀刻操作相同,区别仅在于蚀刻的时间相对较短,主要由于需要蚀刻掉的沉铜层较薄。When the ER is exposed, the exposure energy is lowered, and the dry film entering the through hole can be insufficiently polymerized, thereby creating favorable conditions for the reaction between the dry film in the through hole and the film release agent (see FIG. 3). The first development and flash erosion can be ER development and ER flashing. The purpose of flash etching is to expose the lines that need to be plated. The flashing operation is the same as the existing etching operation, except that the etching time is relatively short, mainly due to the thin copper layer that needs to be etched away.
作为本发明的一个优选实施例,曝光能量通常为70mj(毫焦),此处采用曝光能量范围为30~40mj。在此范围内进行曝光,为通孔内干膜与退膜药水反应创造有利的条件,使退膜效果较好。As a preferred embodiment of the invention, the exposure energy is typically 70 mj (milli-joule), where exposure energy ranges from 30 to 40 mj. Exposure in this range creates favorable conditions for the reaction between the dry film in the through-hole and the film-removing solution, so that the film-removing effect is better.
在步骤S104中,将线路板中相应抗镀金的部位贴附抗镀金干膜;In step S104, attaching a corresponding anti-gold plating portion of the circuit board to the anti-gold plating dry film;
在本发明实施例中,采用真空贴膜法,使AR(Au Resist,抗镀金干膜)充分填充线路间隙,包括微通孔内。通孔通常不需要镀金,抗镀金干膜能够对通孔起到防止镀金的作用。In the embodiment of the present invention, the AR (Au Resist) is sufficiently filled with the line gap, including the micro through hole, by the vacuum filming method. The through hole usually does not require gold plating, and the anti-gold plating dry film can prevent the gold plating from being applied to the through hole.
在步骤S105中,当进行抗镀金干膜曝光时,在线路板中通孔的上方开窗;In step S105, when the anti-gold plating dry film exposure is performed, a window is opened above the through hole in the circuit board;
参见图4(a),在通孔上方进行开窗设计可以为在对应通孔处阻止曝光,避免孔内干膜发生二次聚合。尤其经过二次干膜贴附和二次曝光后,干膜聚合更加充分,使干膜难以褪除。Referring to FIG. 4(a), the fenestration design above the through hole may prevent exposure at the corresponding through hole and avoid secondary polymerization of the dry film in the hole. In particular, after secondary dry film attachment and double exposure, dry film polymerization is more sufficient, making it difficult to remove the dry film.
在本发明实施例中,阻止曝光可以为在线路板所对应的设计文件中,将通孔对应处设计为不曝光;在本发明其他实施例中,阻止曝光可以采用行业内其他惯用手段来进行替代。In the embodiment of the present invention, the exposure may be blocked in the design file corresponding to the circuit board, and the corresponding position of the through hole is not exposed; in other embodiments of the present invention, the exposure may be prevented by other conventional means in the industry. Alternative.
在步骤S106中,进行第二次显影后,将线路板电镀金;In step S106, after performing the second development, the circuit board is plated with gold;
在本发明实施例中,进行第二次显影可以为AR显影(参见图4(b)),然后将线路板镀金,抗氧化(参见图5)。In the embodiment of the present invention, the second development may be AR development (see Fig. 4(b)), and then the wiring board is plated with gold to resist oxidation (see Fig. 5).
在步骤S107中,将线路板退膜并进行第二次闪蚀。In step S107, the wiring board is peeled off and a second flash is performed.
参见图6,在退膜时通过退膜药水顺利去除掉表面的干膜后,与孔内未完全聚合的干膜单体反应,降低了退膜的难度,从而达到将干膜完全褪除的目的。Referring to Fig. 6, after the film is successfully removed by the film-removing syrup, the dry film of the surface is not completely polymerized, thereby reducing the difficulty of film detachment, thereby completely removing the dry film. purpose.
在本发明实施例中,提供的无引线镀金板退膜方法,通过降低ER曝光时的曝光能量,提升了ER曝光的生产效率,单流程生产时间缩短30%,再通过在 AR曝光时通孔处开窗设计彻底解决了TLP微通孔产品的退膜不尽,大大提升了生产效率和产品良率,适用于所有TLP流程的通孔线路板。In the embodiment of the present invention, the method for removing the lead-free gold-plated plate is provided, and the production efficiency of the ER exposure is improved by reducing the exposure energy during the ER exposure, and the single-process production time is shortened by 30%, and then The window opening design at the through hole during AR exposure completely solves the problem of unsatisfactory film removal of TLP micro-via products, greatly improving production efficiency and product yield, and is suitable for through-hole circuit boards of all TLP processes.
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。 The above-mentioned embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

Claims (6)

  1. 一种无引线镀金板退膜方法,其特征在于,所述方法包括:A method for unrolling a lead-free gold plate, characterized in that the method comprises:
    将进行线路制作后的线路板沉铜;The circuit board after the line is fabricated is copper-plated;
    进行抗蚀刻干膜前处理后,并在对应抗蚀刻沉铜表层部位贴附抗蚀干膜;After the anti-etching dry film pre-treatment, and attaching a resist dry film to the surface portion corresponding to the anti-etching copper;
    在抗蚀刻干膜曝光时,降低曝光能量,并进行第一次显影和闪蚀;When the anti-etching dry film is exposed, the exposure energy is lowered, and the first development and flashing are performed;
    将所述线路板中相应抗镀金的部位贴附抗镀金干膜;Attaching a corresponding anti-gold plating portion of the circuit board to the anti-gold plating dry film;
    当进行抗镀金干膜曝光时,在所述线路板中通孔的上方开窗;When performing an anti-gold plating dry film exposure, opening a window above the through hole in the circuit board;
    进行第二次显影后,将所述线路板电镀金;After performing the second development, the circuit board is plated with gold;
    将所述线路板退膜并经行第二次闪蚀。The circuit board is peeled off and a second flash is applied.
  2. 如权利要求1所述的无引线镀金板退膜方法,其特征在于,所述降低曝光能量具体为:The method for removing a lead-free gold-plated plate according to claim 1, wherein the reducing the exposure energy is specifically:
    曝光能量范围在30~40mj之间;The exposure energy ranges from 30 to 40 mj;
    其中,mj为能量单位毫焦。Where mj is the energy unit of millijoule.
  3. 如权利要求1所述的无引线镀金板退膜方法,其特征在于,所述当进行抗镀金干膜曝光时,在所述线路板中通孔的上方开窗具体为:The method for unwinding a lead-free gold-plated plate according to claim 1, wherein when the anti-gold plating dry film is exposed, the window opening above the through hole in the circuit board is:
    在所述线路板中通孔的上方阻止曝光。Exposure is prevented above the vias in the board.
  4. 如权利要求1所述的无引线镀金板退膜方法,其特征在于,所述将进行线路制作后的线路板沉铜具体为:The method for unwinding a lead-free gold-plated plate according to claim 1, wherein the copper plate of the circuit board after the line fabrication is specifically:
    对线路板沉铜厚度为0.5~1μm。The thickness of the copper on the circuit board is 0.5 to 1 μm.
  5. 如权利要求1所述的无引线镀金板退膜方法,其特征在于,所述贴附抗蚀干膜和抗镀金干膜在真空环境下进行。The lead-free gold-plated plate peeling method according to claim 1, wherein the attached dry resist film and the anti-gold plating dry film are performed in a vacuum environment.
  6. 如权利要求5所述的无引线镀金板退膜方法,其特征在于,所述真空环境的具体参数为:The method for stripping a lead-free gold-plated plate according to claim 5, wherein the specific parameters of the vacuum environment are:
    真空压膜温度为60-90℃,抽真空时间为30~50s,压力为0.4~0.6MPa,加压时间为20~50s。 The vacuum laminating temperature is 60-90 ° C, the vacuuming time is 30 to 50 s, the pressure is 0.4 to 0.6 MPa, and the pressing time is 20 to 50 s.
PCT/CN2015/094366 2014-12-31 2015-11-12 Method for removing film on leadless gilt plate WO2016107295A1 (en)

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