CN104124283A - 一种掺杂的肖特基势垒器件及其制备方法 - Google Patents
一种掺杂的肖特基势垒器件及其制备方法 Download PDFInfo
- Publication number
- CN104124283A CN104124283A CN201410384819.2A CN201410384819A CN104124283A CN 104124283 A CN104124283 A CN 104124283A CN 201410384819 A CN201410384819 A CN 201410384819A CN 104124283 A CN104124283 A CN 104124283A
- Authority
- CN
- China
- Prior art keywords
- doping
- schottky barrier
- layer
- phosphorus
- metal silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 89
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000011574 phosphorus Substances 0.000 claims abstract description 35
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 35
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 32
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910001199 N alloy Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Chemical group 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000002860 competitive effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410384819.2A CN104124283B (zh) | 2014-08-07 | 2014-08-07 | 一种掺杂的肖特基势垒器件及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410384819.2A CN104124283B (zh) | 2014-08-07 | 2014-08-07 | 一种掺杂的肖特基势垒器件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104124283A true CN104124283A (zh) | 2014-10-29 |
CN104124283B CN104124283B (zh) | 2018-10-26 |
Family
ID=51769632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410384819.2A Active CN104124283B (zh) | 2014-08-07 | 2014-08-07 | 一种掺杂的肖特基势垒器件及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104124283B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106409828A (zh) * | 2016-11-30 | 2017-02-15 | 上海芯石微电子有限公司 | 一种适用小型化封装的半桥整流肖特基器件及制造方法 |
CN107785250A (zh) * | 2016-08-31 | 2018-03-09 | 株洲中车时代电气股份有限公司 | 碳化硅基肖特基接触制作方法及肖特基二极管制造方法 |
CN113130626A (zh) * | 2021-03-26 | 2021-07-16 | 先之科半导体科技(东莞)有限公司 | 一种大功率肖特基二极管 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040211974A1 (en) * | 2003-04-24 | 2004-10-28 | Chip Integration Tech. Co., Ltd. | Two mask shottky barrier diode with locos structure |
CN101436614A (zh) * | 2008-12-19 | 2009-05-20 | 中国科学院上海微系统与信息技术研究所 | 基于含锑的肖特基二极管及自对准制造方法 |
CN101572233A (zh) * | 2008-04-28 | 2009-11-04 | 英飞凌科技奥地利有限公司 | 包括激光退火的半导体器件制造方法 |
CN101697357A (zh) * | 2009-05-12 | 2010-04-21 | 上海芯石微电子有限公司 | 一种肖特基势垒二极管及其制备方法 |
CN102983163A (zh) * | 2011-09-07 | 2013-03-20 | 中国科学院微电子研究所 | 低源漏接触电阻MOSFETs及其制造方法 |
CN103311316A (zh) * | 2012-03-08 | 2013-09-18 | 中国科学院微电子研究所 | 肖特基二极管及其制造方法 |
-
2014
- 2014-08-07 CN CN201410384819.2A patent/CN104124283B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040211974A1 (en) * | 2003-04-24 | 2004-10-28 | Chip Integration Tech. Co., Ltd. | Two mask shottky barrier diode with locos structure |
CN101572233A (zh) * | 2008-04-28 | 2009-11-04 | 英飞凌科技奥地利有限公司 | 包括激光退火的半导体器件制造方法 |
CN101436614A (zh) * | 2008-12-19 | 2009-05-20 | 中国科学院上海微系统与信息技术研究所 | 基于含锑的肖特基二极管及自对准制造方法 |
CN101697357A (zh) * | 2009-05-12 | 2010-04-21 | 上海芯石微电子有限公司 | 一种肖特基势垒二极管及其制备方法 |
CN102983163A (zh) * | 2011-09-07 | 2013-03-20 | 中国科学院微电子研究所 | 低源漏接触电阻MOSFETs及其制造方法 |
CN103311316A (zh) * | 2012-03-08 | 2013-09-18 | 中国科学院微电子研究所 | 肖特基二极管及其制造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107785250A (zh) * | 2016-08-31 | 2018-03-09 | 株洲中车时代电气股份有限公司 | 碳化硅基肖特基接触制作方法及肖特基二极管制造方法 |
CN107785250B (zh) * | 2016-08-31 | 2020-12-11 | 株洲中车时代半导体有限公司 | 碳化硅基肖特基接触制作方法及肖特基二极管制造方法 |
CN106409828A (zh) * | 2016-11-30 | 2017-02-15 | 上海芯石微电子有限公司 | 一种适用小型化封装的半桥整流肖特基器件及制造方法 |
CN106409828B (zh) * | 2016-11-30 | 2023-06-02 | 上海芯石微电子有限公司 | 一种适用小型化封装的半桥整流肖特基器件及制造方法 |
CN113130626A (zh) * | 2021-03-26 | 2021-07-16 | 先之科半导体科技(东莞)有限公司 | 一种大功率肖特基二极管 |
Also Published As
Publication number | Publication date |
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CN104124283B (zh) | 2018-10-26 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: 201605 room 1960, fragrant long highway 102, new town, Shanghai, Songjiang District Applicant after: SHANGHAI CORE-STONE MICROELECTRONICS CO.,LTD. Address before: 201102, room 56, No. 287, Lane 301, Gulong Road, Shanghai, Minhang District Applicant before: SHANGHAI CORE-STONE MICROELECTRONICS CO.,LTD. |
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COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201102 MINHANG, SHANGHAI TO: 201605 SONGJIANG, SHANGHAI |
|
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Guan Shiying Inventor after: Hong Xufeng Inventor before: Hong Xufeng |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231110 Address after: Room 503, No. 111, Yutian South Road, Jiading District, Shanghai 201800 Patentee after: SHANGHAI XINSHI SEMICONDUCTOR CO.,LTD. Address before: Room 102, No. 1960 Xiangchang Road, Xinbang Town, Songjiang District, Shanghai, May 2016 Patentee before: SHANGHAI CORE-STONE MICROELECTRONICS CO.,LTD. |