CN104086223A - Manufacturing method of efficient cooling ceramic substrate for LEDs - Google Patents
Manufacturing method of efficient cooling ceramic substrate for LEDs Download PDFInfo
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- CN104086223A CN104086223A CN201410352076.0A CN201410352076A CN104086223A CN 104086223 A CN104086223 A CN 104086223A CN 201410352076 A CN201410352076 A CN 201410352076A CN 104086223 A CN104086223 A CN 104086223A
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- ceramic substrate
- heat radiation
- high efficiency
- graphene powder
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Abstract
The invention provides a manufacturing method of an efficient cooling ceramic substrate for LEDs (Light Emitting Diodes). The manufacturing method comprises the following steps: (1) selecting a ceramic substrate as a manufacturing base material, wherein graphene powder is adsorbed on the surface of the ceramic substrate and distributed at the density of 5%-90%; vacuumizing till high vacuum degree which is greater than 4.0*10E-3Pa; (2) by taking an insert gas or a reactant gas or the mixed gas of the insert gas and the reactant gas as the carrier gas, depositing a thin film made of at least one material on the graphene powder adsorbed on the ceramic substrate and the surface of the ceramic substrate by use of a deposition method in a vacuum working environment having the vacuum degree of 1.0*10E-1Pa, wherein the deposition temperature is 25-125 DEG C and the deposition time is 1200-5000 seconds. The heat conductivity coefficient of the manufactured ceramic substrate is greater than 800-3600W/(m.K), and therefore, the ceramic substrate is good in thermal conductivity and also good in insulativity, and thus can be used as a cooling substrate for various semiconductor chips.
Description
Technical field
The present invention relates to the making method of high efficiency and heat radiation ceramic substrate for a kind of LED.
Background technology
LED illuminating product is because energy conversion efficiency is very high, energy consumption only has 10% of incandescent light in theory, compare luminescent lamp, can reach 50% energy-saving effect, thereby there is energy-saving and environmental protection and long-life advantage, can be widely used in the lighting fields such as Landscape Lighting, safety lighting, special lighting and general lighting light source, market potential is huge.
Generally, it is 0.2 ~ 0.3nm/ ℃ that the emission wavelength of LED varies with temperature, and spectral width increases thereupon, affects bright-colored degree.In addition, when flow through pn knot of forward current, when heat generation loss makes interface produce temperature rise, at near room temperature, 1 ℃ of the every rising of temperature, the luminous intensity of LED can correspondingly reduce by 1% left and right, and the reason of LED heating is because added electric energy is not all converted into luminous energy, but a part transforms into heat energy.The light efficiency of LED only has 100lm/W at present, and its electro-optical efficiency is 20 ~ 30% left and right approximately only, that is to say that about 70% electric energy has all become heat energy.Therefore the core breakthrough point that, affects high-power LED illumination is heat dissipation technology.
Almost most LED chip heat dispersion substrates is Al
2o
3pottery, silicon carbide, silicon chip, the compound Al of AlN
2o
3ceramic substrate.It is fine that one deck isolator requires its insulating property below, but also want heat conductivility fine.Yet these two performances are contradiction, be all the good heat conductivity of conductor conventionally, and the heat conductivility of isolator is poor.Not only met thermal conductivity well simultaneously but also good insulating be difficult to accomplish.
Summary of the invention
The object of the invention is to overcome the above-mentioned deficiency of prior art and the making method of the high LED of a kind of reliability with high efficiency and heat radiation ceramic substrate is provided, making ceramic substrate not only meet thermal conductivity well simultaneously but also good insulating.
Technical scheme of the present invention is: the making method of high efficiency and heat radiation ceramic substrate for a kind of LED, comprises the following steps:
(1) pumping high vacuum: select surface adsorption distribution density be the ceramic substrate of 5% ~ 90% graphene powder as processing base material, and pumping high vacuum is to vacuum tightness > 4.0 * 10E-3Pa;
(2) thin film deposition: using rare gas element or reactant gases or the mixed gas of the two as carrier gas, in vacuum tightness, be under working vacuum environment more than 1.0 * 10E-1Pa, adopt sedimentation that at least one material film is deposited on to the graphene powder that is adsorbed on ceramic substrate and the surface of ceramic substrate, depositing temperature is 25 ~ 125 ℃, depositing time is 1200 ~ 5000 seconds, obtains LED high efficiency and heat radiation ceramic substrate.
Further, described graphene powder is conduction or the insulation graphene powder of single-layer sheet or multilayer tablet, the thickness of the conduction of described single-layer sheet or insulation graphene powder is 0.33nm, and length is 3um ~ 5um, and the thickness of the conduction of described multilayer tablet or insulation graphene powder is 1nm ~ 3nm.
Further, described sedimentation selects magnetic to filter one or more depositional mode combinations in multi-arc ion recombination film plating method (FCVA), electron cyclotron resonance chemical vapor deposition method (ECR-CVD), high energy ion beam sputtering method (IBD), intermediate frequency or radio frequency chemical Vapor deposition process (RF-CVD), organometallics chemical Vapor deposition process (MOCVD), Atomic layer deposition method (ALD).
Further, described material film is a kind of in SiC, TiAlN, AlN, Ag, Cu, Al, Sn, Au, DLC, GaN, InGaAsP, InAlGaAsP, InP.
Further, the deposit thickness of described material film is the preferred 0.25um ~ 0.5um of 0.1um ~ 2.0um().
Further, while adopting intermediate frequency or radio frequency chemical Vapor deposition process that at least one material film is deposited on to the graphene powder that is adsorbed on ceramic substrate and ceramic substrate surperficial, meet the following conditions: radio frequency power is the preferred 600W of 500W ~ 700W(), accelerating grid electrode voltage is the preferred 300V of 250V ~ 400V().
Further, while adopting high energy ion beam sputtering method that at least one material film is deposited on to the graphene powder that is adsorbed on ceramic substrate and ceramic substrate surperficial, meet the following conditions: ion source radio frequency power is the preferred 700W of 600W ~ 800W(), ion speed accelerating grid electrode voltage is the preferred 300V of 250V ~ 400V().
Further, in step (1), the distribution density of described graphene powder is 50% ~ 80%.
Further, in step (2), described depositing temperature is 26 ~ 45 ℃, and depositing time is 1250 ~ 1650 seconds.
The present invention compared with prior art has following features:
(1) utilize heat superconducting coefficient (5300 W/mK) characteristic of Graphene, by regulating the distribution density of graphene powder on ceramic substrate and the deposit thickness of deposit film, make to form between deposit film and graphene powder and ceramic substrate a kind of compound new texture material continuously, make ceramic substrate not only meet thermal conductivity well simultaneously but also good insulating;
(2) thermal conductivity > 800 ~ 3600 W/ (mK) of prepared high efficiency and heat radiation ceramic substrate, higher than the about 200 ~ 800W/mK of ceramic copper-clad plate DCB() and the thermal conductivity of AlN ceramic substrate (approximately 150 ~ 180 W/mK);
(3) the continuous compound new texture material forming between deposit film and graphene powder and ceramic substrate is a kind of high efficiency and heat radiation ceramic substrate, this substrate can be used for the heat dispersion substrate of various semi-conductor chips, if the heat dissipation ceramic substrate of great power LED, high-power semiconductor laser chip are with in heat dissipation ceramic substrate and various thermally sensitive device, applied widely.
Accompanying drawing explanation
Fig. 1 is the structural representation of ceramic substrate making equipment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1
As shown in Figure 1: it is as follows with high efficiency and heat radiation ceramic substrate that the present embodiment is made a kind of LED with ECR-CVD method:
The present embodiment is selected ECR-CVD deposition source 1 and is used the working gas CH in combination gas holder 7
4, C
2h
2, H
2complete the diamond-film-like (DLC) to processing base material 8 surface deposition 0.25um; Wherein, C
2h
2being mainly used in increasing sedimentation velocity, is a kind of gas that can choice for use.
One, system feeding and pumping high vacuum
By the single-layer sheet graphene powder of surface adsorption 50% distribution density (thickness is 0.33nm, and length is 3um ~ 5um)
Ceramic substrate as processing base material 8, be fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum degree reaches 2 * 10E-3Pa, start worktable 5 and be also warming up to 26 ℃, rotating speed 45r.p.m.
Two, substrate surface ECR-CVD thin film deposition
To vacuum chamber, be filled with CH
4+ H
2to vacuum tightness be 1.0 * 10E-1Pa, with CH
4+ H
2as DLC thin film deposition, use
Carrier gas, throughput ratio CH
4: H
2=9:1, adopt ECR-CVD deposition by DLC thin film deposition in being adsorbed on single-layer sheet graphene powder on ceramic substrate and the surface of ceramic substrate, wherein microwave power is 200W, base material temperature is 26 ℃, depositing time is 1250 seconds.
Three, the thermal conductivity of resulting high efficiency and heat radiation ceramic substrate: > 2000 ~ 3000 W/ (mK).
Embodiment 2
As shown in Figure 1: it is as follows with high efficiency and heat radiation ceramic substrate that the present embodiment is made a kind of LED with RF-CVD method:
The present embodiment is selected RF-CVD deposition source 2 and is used the working gas CH in combination gas holder 7
4, C
2h
2, H
2complete the diamond-film-like (DLC) to processing base material 8 surface deposition 0.50um.
One, system feeding and pumping high vacuum
By the single-layer sheet graphene powder of surface adsorption 80% distribution density, (thickness is 0.33nm, length is 3um ~ 5um) ceramic substrate as processing base material 8, be fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 * 10E-3Pa, start worktable 5 and be warming up to 45 ℃, rotating speed 45r.p.m.
Two, substrate surface RF-CVD thin film deposition
To vacuum chamber, be filled with CH
4+ H
2to vacuum tightness be 1.0 * 10E-1Pa, with CH
4+ H
2as DLC thin film deposition carrier gas, throughput ratio CH
4: H
2=9:1, adopt RF-CVD deposition by DLC thin film deposition in being adsorbed on single-layer sheet graphene powder on ceramic substrate and the surface of ceramic substrate, wherein radio frequency power is 600W, accelerating grid electrode voltage is 300V, base material temperature is 45 ℃, depositing time is 1650 seconds.
Three, the thermal conductivity of resulting high efficiency and heat radiation ceramic substrate: > 2800 ~ 3600 W/ (mK)
Embodiment 3
As shown in Figure 1: it is as follows with high efficiency and heat radiation ceramic substrate that the present embodiment is made a kind of LED with RF-CVD method:
The present embodiment is selected RF-CVD deposition source 2 and is used the working gas CH in combination gas holder 7
4, C
2h
2, H
2complete the diamond-film-like (DLC) to processing base material 8 surface deposition 0.50um.
One, system feeding and pumping high vacuum
By the single-layer sheet graphene powder of surface adsorption 10% distribution density, (thickness is 0.33nm, length is 3um ~ 5um) ceramic substrate as processing base material 8, be fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 * 10E-3Pa, start worktable 5 and be warming up to 45 ℃, rotating speed 45r.p.m.
Two, substrate surface RF-CVD thin film deposition
To vacuum chamber, be filled with CH
4+ H
2to vacuum tightness be 1.0 * 10E-1Pa, with CH
4+ H
2as DLC thin film deposition carrier gas, throughput ratio CH
4: H
2=9:1, adopt RF-CVD deposition by DLC thin film deposition in being adsorbed on single-layer sheet graphene powder on ceramic substrate and the surface of ceramic substrate, wherein radio frequency power is 600W, accelerating grid electrode voltage is 300V, base material temperature is 45 ℃, depositing time is 1650 seconds.
Three, the thermal conductivity of resulting high efficiency and heat radiation ceramic substrate: > 800 ~ 1200 W/ (mK)
Embodiment 4
As shown in Figure 1: it is as follows with high efficiency and heat radiation ceramic substrate that the present embodiment is made a kind of LED with IBD method:
The present embodiment is selected IBD deposition source 3, magnetron sputtering target 4 and is used the working gas N in combination gas holder 7
2, Ar completes the aluminium nitride (AlN) to processing base material 8 surface deposition 1.5um.
One, system feeding and pumping high vacuum
By the single-layer sheet graphene powder of surface adsorption 50% distribution density, (thickness is 0.33nm, length is 3um ~ 5um) ceramic substrate as processing base material 8, be fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 * 10E-3Pa, start worktable 5 and be warming up to 120 ℃, rotating speed 45r.p.m.
Two, substrate surface IBD thin film deposition
To vacuum chamber, be filled with N
2to vacuum tightness be 1.0 * 10E-1Pa, using Ar as IBD thin film deposition carrier gas, flow is Ar=60sccm, adopt IBD deposition by AlN thin film deposition in being adsorbed on single-layer sheet graphene powder on ceramic substrate and the surface of ceramic substrate, wherein ion source radio frequency power is 700W, and ion speed accelerating grid electrode voltage is 300V, and magnetron sputtering target 4 is magnetic control aluminium target, base material temperature is 120 ℃, and depositing time is 5000 seconds.
Three, the thermal conductivity of resulting high efficiency and heat radiation ceramic substrate: > 1200 ~ 2000 W/ (mK).
Embodiment 5
As shown in Figure 1: it is as follows with high efficiency and heat radiation ceramic substrate that the present embodiment is made a kind of LED with IBD method:
The present embodiment is selected IBD deposition source 3, magnetron sputtering target 4 and is used the working gas N in combination gas holder 7
2, Ar completes the aluminium nitride (AlN) to processing base material 8 surface deposition 1.5um.
One, system feeding and pumping high vacuum
Using the ceramic substrate of the multilayer tablet graphene powder of surface adsorption 50% distribution density (thickness is 1nm ~ 3nm) as processing base material 8, be fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 * 10E-3Pa, start worktable 5 and be warming up to 120 ℃, rotating speed 45r.p.m.
Two, substrate surface IBD thin film deposition
To vacuum chamber, be filled with N
2to vacuum tightness be 1.0 * 10E-1Pa, using Ar as IBD thin film deposition carrier gas, flow is Ar=60sccm, adopt IBD deposition by AlN thin film deposition in being adsorbed on multilayer tablet graphene powder on ceramic substrate and the surface of ceramic substrate, wherein ion source radio frequency power is 650W, and ion speed accelerating grid electrode voltage is 350V, and magnetron sputtering target 4 is magnetic control aluminium target, base material temperature is 120 ℃, and depositing time is 3600 seconds.
Three, the thermal conductivity of resulting high efficiency and heat radiation ceramic substrate: > 1000 ~ 1500 W/ (mK).
By above-described embodiment diamond-film-like deposition or aluminium nitride, make to form between deposit film and graphene powder and ceramic substrate a kind of compound new texture material continuously, solve the poor difficult problem of isolator heat conductivility.Thermal conductivity > 800 ~ 3600 W/ (mK) of high efficiency and heat radiation ceramic substrate, higher than the about 200 ~ 800W/mK of ceramic copper-clad plate DCB() and the thermal conductivity of AlN ceramic substrate (approximately 150 ~ 180 W/mK).
These are only the preferred embodiments of the present invention, be not limited to the present invention, obviously, those skilled in the art can carry out various changes, modification and not depart from the spirit and scope of the present invention the present invention.If of the present invention these are revised and within modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, are all belonged to protection scope of the present invention.
Claims (10)
1. a making method for high efficiency and heat radiation ceramic substrate for LED, is characterized in that: comprise the following steps:
(1) pumping high vacuum: select surface adsorption distribution density be the ceramic substrate of 5% ~ 90% graphene powder as processing base material, and pumping high vacuum is to vacuum tightness > 4.0 * 10E-3Pa;
(2) thin film deposition: using rare gas element or reactant gases or the mixed gas of the two as carrier gas, in vacuum tightness, be under working vacuum environment more than 1.0 * 10E-1Pa, adopt sedimentation that at least one material film is deposited on to the graphene powder that is adsorbed on ceramic substrate and the surface of ceramic substrate, depositing temperature is 25 ~ 125 ℃, depositing time is 1200 ~ 5000 seconds, obtains LED high efficiency and heat radiation ceramic substrate.
2. the making method of high efficiency and heat radiation ceramic substrate for LED according to claim 1, it is characterized in that: described graphene powder is conduction or the insulation graphene powder of single-layer sheet or multilayer tablet, the thickness of the conduction of described single-layer sheet or insulation graphene powder is 0.33nm, length is 3um ~ 5um, and the thickness of the conduction of described multilayer tablet or insulation graphene powder is 1nm ~ 3nm.
3. the making method with high efficiency and heat radiation ceramic substrate according to LED described in claim 1 or 2, is characterized in that: described sedimentation selects magnetic to filter one or more depositional mode combinations in multi-arc ion recombination film plating method, electron cyclotron resonance chemical vapor deposition method, high energy ion beam sputtering method, intermediate frequency or radio frequency chemical Vapor deposition process, organometallics chemical Vapor deposition process, Atomic layer deposition method.
4. the making method with high efficiency and heat radiation ceramic substrate according to LED described in claim 1 or 2, is characterized in that: described material film is a kind of in SiC, TiAlN, AlN, Ag, Cu, Al, Sn, Au, DLC, GaN, InGaAsP, InAlGaAsP, InP.
5. the making method of high efficiency and heat radiation ceramic substrate for LED according to claim 3, is characterized in that: described material film is a kind of in SiC, TiAlN, AlN, Ag, Cu, Al, Sn, Au, DLC, GaN, InGaAsP, InAlGaAsP, InP.
6. the making method of high efficiency and heat radiation ceramic substrate for LED according to claim 4, is characterized in that: the deposit thickness of described material film is 0.1um ~ 2.0um.
7. the making method of high efficiency and heat radiation ceramic substrate for LED according to claim 3, it is characterized in that: while adopting intermediate frequency or radio frequency chemical Vapor deposition process that at least one material film is deposited on to the graphene powder that is adsorbed on ceramic substrate and ceramic substrate surperficial, meet the following conditions: radio frequency power is 500W ~ 700W, accelerating grid electrode voltage is 250V ~ 400V.
8. the making method of high efficiency and heat radiation ceramic substrate for LED according to claim 3, it is characterized in that: while adopting high energy ion beam sputtering method that at least one material film is deposited on to the graphene powder that is adsorbed on ceramic substrate and ceramic substrate surperficial, meet the following conditions: ion source radio frequency power is 600W ~ 800W, ion speed accelerating grid electrode voltage is 250V ~ 400V.
9. the making method with high efficiency and heat radiation ceramic substrate according to LED described in claim 1 or 2, is characterized in that: in step (1), the distribution density of described graphene powder is 50% ~ 80%.
10. the making method with high efficiency and heat radiation ceramic substrate according to LED described in claim 1 or 2, is characterized in that: in step (2), described depositing temperature is 26 ~ 45 ℃, and depositing time is 1250 ~ 1650 seconds.
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| CN104086223B CN104086223B (en) | 2016-06-08 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105506624A (en) * | 2015-12-22 | 2016-04-20 | 北京大学东莞光电研究院 | Film plating method of aluminium nitride ceramic substrate |
| CN106498342A (en) * | 2015-09-08 | 2017-03-15 | 上海威廉照明电气有限公司 | Manufacture method of the LED illumination with high reflective substrate |
| CN107311666A (en) * | 2017-05-23 | 2017-11-03 | 福建华清电子材料科技有限公司 | The shaping of low-temperature co-fired ceramic substrate and sintering method |
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| US20080019133A1 (en) * | 2005-07-15 | 2008-01-24 | Korea Photonics Technology Institute | High power light-emitting diode package comprising substrate having beacon |
| CN103779292A (en) * | 2013-12-31 | 2014-05-07 | 中国科学院上海微系统与信息技术研究所 | Method for preparing graphene-based chip heat-radiating material |
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2014
- 2014-07-23 CN CN201410352076.0A patent/CN104086223B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080019133A1 (en) * | 2005-07-15 | 2008-01-24 | Korea Photonics Technology Institute | High power light-emitting diode package comprising substrate having beacon |
| CN103779292A (en) * | 2013-12-31 | 2014-05-07 | 中国科学院上海微系统与信息技术研究所 | Method for preparing graphene-based chip heat-radiating material |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106498342A (en) * | 2015-09-08 | 2017-03-15 | 上海威廉照明电气有限公司 | Manufacture method of the LED illumination with high reflective substrate |
| CN106498342B (en) * | 2015-09-08 | 2020-08-11 | 上海威廉照明电气有限公司 | Manufacturing method of high-light-reflection substrate for LED illumination |
| CN105506624A (en) * | 2015-12-22 | 2016-04-20 | 北京大学东莞光电研究院 | Film plating method of aluminium nitride ceramic substrate |
| CN105506624B (en) * | 2015-12-22 | 2018-01-16 | 北京大学东莞光电研究院 | A kind of film plating process of aluminum nitride ceramic substrate |
| CN107311666A (en) * | 2017-05-23 | 2017-11-03 | 福建华清电子材料科技有限公司 | The shaping of low-temperature co-fired ceramic substrate and sintering method |
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