CN106498342B - Manufacturing method of high-light-reflection substrate for LED illumination - Google Patents
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Abstract
The invention relates to a manufacturing method of a high-light-reflection substrate for LED illumination. The manufacturing method comprises the following steps: (1) selecting ceramic, metal or non-metal materials or composite materials of the materials as base materials of a substrate, and preparing a geometric three-dimensional structure layer with ordered arrangement and nanometer size on the surface of the substrate by adopting a nano-imprinting process; (2) the optical material is deposited on the surface of the geometric solid structure layer by adopting a thin film deposition method, so that the total reflection of the LED light and the directional adjustable control of the direction of the reflected light are realized, and the high electro-optic conversion efficiency is obtained. In addition, the heat dissipation of the LED is improved to the maximum extent by utilizing the high heat conductivity coefficient characteristic of the single-layer or multi-layer graphene, and the manufactured substrate has good electric light efficiency, weather resistance and high heat conductivity coefficient, and is an efficient green environment-friendly LED chip substrate.
Description
Technical Field
The invention relates to an LED packaging technology, in particular to a manufacturing method of a high-reflection substrate for LED illumination.
Background
The LED lighting product has the advantages of energy conservation, environmental protection and long service life because the energy conversion efficiency is very high, the energy consumption is theoretically less than 10% of that of an incandescent lamp, and compared with a fluorescent lamp, the energy-saving effect of more than 60% can be achieved, so that the LED lighting product can be widely applied to the lighting fields of landscape lighting, safety lighting, special lighting, common lighting sources and the like, and has huge market potential.
Generally, the light-emitting wavelength of the LED changes to 0.02-0.3 nm/DEG C along with the temperature, the spectral width increases along with the change, and the color vividness is influenced. In addition, when a forward current flows through a pn junction, the heat generation loss causes the junction area to generate temperature rise, and the luminous intensity of the LED is correspondingly reduced by about 0.05-1% when the temperature rises by 1 ℃ near the room temperature, and the reason of the heat generation of the LED is that the added electric energy is not completely converted into light energy, but part of the electric energy is converted into heat energy. The luminous efficiency of the commercial white light LED is about 100 lm/W, and the electro-optic conversion efficiency of the manufactured lamp is only about 20-30%. That is, more than about 70% of the electric energy is converted into heat energy. Therefore, heat dissipation and system design techniques are important core breakthrough points affecting LED lighting.
The flexible substrate is expected to be applied to the development of the thinning requirement of an LCD backlight module of automobile navigation, the high-power LED can meet the three-dimensional packaging requirement, basically the flexible substrate takes aluminum as a material, the high-heat conductivity and light-weight characteristic of the aluminum are utilized to manufacture the high-density packaging substrate, the flexible characteristic is achieved after the aluminum substrate is thinned, the high-heat conductivity characteristic can be achieved, and the high-heat conductivity characteristic is also achieved, but the high-power LED packaging heat dissipation problem is also limited.
Disclosure of Invention
The invention aims to provide a manufacturing method of a high-reflection substrate for LED illumination, which improves the electro-optic conversion efficiency.
In order to solve the above technical problems, an embodiment of the present invention provides a method for manufacturing a highly reflective substrate for LED lighting, including:
selecting ceramic, metal or non-metal materials or composite materials of the materials as base materials of a substrate, and preparing a geometric three-dimensional structure layer with ordered arrangement and nanometer size on the surface of the substrate by adopting a nano-imprinting process;
and (2) depositing an optical material on the surface of the geometric three-dimensional structure layer by adopting a thin film deposition method to form a high-reflection layer, wherein the optical material is at least one metal and/or metal oxide.
Optionally, the step (2) comprises the substeps of placing the substrate with the geometric three-dimensional structure layer in a vacuum chamber, vacuumizing to a first vacuum pressure, wherein the first vacuum pressure is less than 4.0 × 10E-3Pa, and introducing argon, nitrogen, oxygen and SiH into the vacuum chamber4、CH4、C2H2、CF4And under the protection of the carrier gas, depositing an optical material on the surface of the geometric three-dimensional structure layer to form a high-reflection layer, wherein the optical material is at least one metal and/or metal oxide.
Optionally, after the step (1) and before the step (2), the following steps are further included: and uniformly distributing the graphene powder on the surface of the geometric three-dimensional structure layer to form a heat dissipation layer. In the step (2), an optical material is deposited on the surface of the heat dissipation layer by using a thin film deposition method to form a high light reflection layer, wherein the optical material is at least one metal and/or metal oxide.
Optionally, the graphene powder includes a single-layer sheet or a plurality of layers of graphene, the thickness of the single-layer sheet of graphene is 0.33nm, the length of the single-layer sheet of graphene is 3 μm to 5 μm, and the distribution density of the graphene powder (i.e., the area percentage of the graphene powder to the substrate surface) is 35% to 96% (preferably 65% to 85%). The graphene powder may be conductive graphene powder or insulating graphene powder. The thickness of the multilayer graphene powder is 1 nm-3 nm.
Optionally, the selected ceramic material is alumina, aluminum nitride, silicon carbide or zirconia; the selected metal material is iron, steel, copper, aluminum-titanium alloy or aluminum-magnesium alloy; the selected non-metallic material is polystyrene, polycarbonate, organic glass, ABS plastic, quartz glass or optical glass. The thickness of the substrate is 0.05 mm-10 mm, and at least one surface of the substrate is a polished surface.
Optionally, the nano-size includes a nano-line width, the nano-line width being between 50nm and 500 nm. The length of the geometric three-dimensional structure layer is 200 nm-800 mu m, the width is 100 nm-900 mu m, and the height is 100 nm-600 nm.
Optionally, the thin film deposition method is one or more of magnetic filtration multi-arc ion composite coating (FCVA), Chemical Vapor Deposition (CVD), high energy ion beam sputtering deposition (IBD), magnetron sputtering deposition, single Atomic Layer Deposition (ALD), and evaporation coating. The chemical vapor deposition method may be electron cyclotron resonance chemical vapor deposition (ECR-CVD), intermediate frequency or radio frequency chemical vapor deposition (RF-CVD). The magnetron sputtering deposition method can be a direct current, intermediate frequency or radio frequency magnetron sputtering deposition method. The evaporation coating can be an electron gun or laser beam evaporation coating. In a preferred embodiment, when the optical material is deposited on the surface of the graphene powder or the geometric three-dimensional structure layer by using a thin film deposition method, the following deposition conditions are satisfied: the deposition temperature is 30-120 ℃ (preferably 40-80 ℃), and the deposition time is 500-3000 seconds (preferably 520-800 seconds).
In each preferred embodiment, the following conditions are satisfied by the electron cyclotron resonance chemical vapor deposition (ECR-CVD): the microwave power is 250W-400W (preferably 300W); the use of intermediate frequency or radio frequency chemical vapor deposition (RF-CVD) requires the following conditions: the radio frequency power is 500W-700W (preferably 600W), the accelerating grid voltage is 250V-400V (preferably 300V); the high-energy ion beam sputtering deposition (IBD) is adopted to meet the following conditions: the radio frequency power of the ion source is 600W-800W (preferably 700W), the voltage of the ion speed accelerating grid is 250V-400V (preferably 300V);
optionally, the optical material is a composition of one or more of diamond-like carbon, alumina, titania, silica, tantalum pentoxide, zirconia, silver, copper, gold, platinum, silicon, palladium, rhodium.
Optionally, the high light reflecting layer has a thickness of 0.005 μm to 5 μm. The high light reflection layer may be formed by single layer deposition or multiple layer alternate deposition.
Compared with the prior art, the invention has the following characteristics:
(1) by adopting a nano-imprinting process, a geometric three-dimensional structure layer which is orderly arranged and has a nano size is prepared on the surface of the substrate to adjust the light reflection direction of the LED substrate and deposit a high-reflection optical film to obtain high electro-optic conversion efficiency.
(2) By utilizing the comprehensive characteristics of the graphene, the high-reflection film has high light transmission, weather resistance and heat dissipation, and the optical reflection film with the structure can effectively control the light-emitting wavelength of the LED not to change along with the temperature change, so that the LED chip can work stably and efficiently for a long time and the color brightness is ensured.
Drawings
Fig. 1 is a schematic flow chart illustrating a method for manufacturing a highly reflective substrate for LED lighting according to a first embodiment of the present invention;
fig. 2 is a schematic structural view of a highly reflective substrate for LED lighting according to a second embodiment of the present invention;
FIG. 3 is a schematic view of a vacuum chamber according to a second embodiment of the present invention.
Detailed Description
In the following description, numerous technical details are set forth in order to provide a better understanding of the present application. However, it will be understood by those skilled in the art that the technical solutions claimed in the present application can be implemented without these technical details and with various changes and modifications based on the following embodiments.
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The first embodiment of the invention relates to a method for manufacturing a high-reflectivity substrate for LED illumination. Fig. 1 is a schematic flow chart of a manufacturing method of the high-reflectivity substrate for LED illumination. As shown in fig. 1, the method for manufacturing the highly reflective substrate for LED lighting includes the following steps:
in step 101, a ceramic, metal or non-metal material or a composite material of the above materials is selected as a base material of a substrate, and a nano-imprinting process is adopted to prepare a geometric three-dimensional structure layer with ordered arrangement and nano-size on the surface of the substrate.
Then, step 102 is performed, an optical material is deposited on the surface of the geometric solid structure layer by using a thin film deposition method to form a high light reflection layer, wherein the optical material is at least one metal and/or metal oxide.
This flow ends thereafter.
As an alternative embodiment, the step 102 includes the following sub-steps:
placing the substrate with the geometric three-dimensional structure layer in a vacuum chamber, and vacuumizing to a first vacuum pressure, wherein the first vacuum pressure is less than 4.0 multiplied by 10E-3 Pa;
introducing argon, nitrogen, oxygen, SiH4, CH4, C2H2, CF4, trimethylaluminum, triethylaluminum or a mixed gas of the gases as a carrier gas into the vacuum chamber, and vacuumizing to a second vacuum pressure, wherein the second vacuum pressure is more than 1.0 × 10E-1 Pa;
and under the protection of a carrier gas, depositing an optical material on the surface of the geometric three-dimensional structure layer to form a high-reflection layer, wherein the optical material is at least one metal and/or metal oxide.
In other embodiments of the present invention, the high light reflection layer may be formed in other vacuum environments or by introducing other materials mixed with the optical material, and is not limited to the above sequence and parameter setting.
The second embodiment of the invention relates to a manufacturing method of a high-reflectivity substrate for LED illumination. The second embodiment is an improvement over the first embodiment. Specifically, the method comprises the following steps:
after step 101 and before step 102, the method further comprises the following steps:
and uniformly distributing the graphene powder on the surface of the geometric three-dimensional structure layer to form a heat dissipation layer.
In step 102, an optical material is deposited on the surface of the heat dissipation layer by using a thin film deposition method to form a high light reflection layer, wherein the optical material is at least one metal and/or metal oxide.
The above method will be described in detail in examples 1 to 4 below.
Fig. 2 is a schematic structural diagram of a preferred highly reflective substrate for LED lighting. As shown in fig. 2, the high-light-reflection substrate for LED lighting includes a substrate 1, a high-light-reflection layer 2, an insulating heat-dissipation coating 3, and an LED package chip 4. In a preferred embodiment, a heat dissipation layer formed by graphene powder is further included between the high light reflection layer 2 and the substrate 1. The substrate 1 may be rigid or flexible.
FIG. 3 is a schematic diagram of a preferred vacuum chamber. As shown in FIG. 3, the vacuum chamber includes an ECR-CVD deposition source 11, an RF-CVD deposition source 12, an IBD deposition source 13, a target 14, a table 15, a vacuum pump assembly 16, and a cluster gas box 17.
Examples 1 and 2 are mainly described by taking an ECR-CVD method and an RF-CVD method in CVD as examples. It is understood that in other embodiments of the present invention, other CVD methods may be used to deposit the optical material on the surface of the graphene powder or the geometric solid structure layer.
Example 1
As shown in fig. 2 and 3: embodiment 1 a method for manufacturing a high reflective heat dissipation substrate for LED lighting by ECR-CVD in CVD is as follows:
example 1A single-side polished alumina ceramic substrate with a thickness of 0.2mm was used, and a nanoimprint process was used to prepare ordered arrays of spheres having a diameter of 160nm on the surface of the ceramic substrateThe distance between the nano hemisphere points and the points in the hemisphere structure layer is 200 nm. The length of the nano-hemispheroid structure is 700 mu m, the width of the nano-hemispheroid structure is 800 mu m, and the height of the nano-hemispheroid structure is 500 nm. Adsorbing single-layer graphene powder on the surface of the nano hemispherical structure layer, fixing the single-layer graphene powder on a workbench 15 along with a ceramic substrate, and using an ECR-CVD deposition source 11 and working gas CH in a combined gas holder 174、H2To complete the deposition of a 0.1 μm diamond-like carbon (DLC) film on the surface of the ceramic substrate.
Firstly, feeding and high vacuum pumping of the system
Fixing the ceramic substrate with the surface adsorbing the monolayer graphene powder with the distribution density of 60% on the workbench 15, closing the feeding door, and starting the vacuum air extractor set 16. When the vacuum degree of the system reaches 1 multiplied by 10E-3Pa, the workbench 15 is started and the temperature is raised to 40 ℃ and the rotating speed is 60 r.p.m.
Second, ECR-CVD film deposition on the surface of the substrate
CH for evacuating the working vacuum chamber4+H2Charging to 1.0 × 10E-1Pa, with CH4+H2As carrier gas for DLC film deposition, the flow ratio CH4:H22: 8. And depositing a DLC film on the surface of the single-layer graphene powder by ECR-CVD deposition to form a composite graphene powder film layer, and preparing the high-reflection heat-dissipation substrate for LED illumination under the deposition conditions of microwave power of 300W, deposition temperature of 40 ℃ and deposition time of 520 seconds.
Example 2
As shown in fig. 2 and 3: embodiment 2 a method for manufacturing a highly reflective substrate for LED lighting by RF-CVD method is as follows:
in example 2, a single-side polished aluminum-titanium alloy substrate with a thickness of 1.0mm is selected, and a 240nm thick three-dimensional structure layer consisting of concentric geometric rings which are orderly arranged, have a nano-wire width of 220nm and a wire-to-wire interval of 100nm to 500nm is prepared on the surface of the substrate by a nano-imprint process. The length of the three-dimensional structure layer is 300nm, and the width of the three-dimensional structure layer is 200 nm. The substrate is mounted on a stage 15 using an RF-CVD deposition source 12 and using a SiH working gas in a combination gas box 174、H2、O2To complete the deposition of 0.05 μm of alternating layers of Si/SiO2 on the surface of the substrateA film.
Firstly, feeding and high vacuum pumping of the system
And (3) fixing the aluminum-titanium alloy base material on the workbench 15, closing the feeding door, and starting the vacuum air extractor set 16. When the vacuum of the system reaches 2 multiplied by 10E-3Pa, the workbench 15 is started and the temperature is raised to 200 ℃ and the rotating speed is 45 r.p.m.
Second, RF-CVD film deposition on the surface of the substrate
SiH is used for the working vacuum of the vacuum chamber4+H2Charging to 1.0 × 10E-1Pa with SiH4+H2As carrier gas for Si film deposition, the flow ratio is SiH4:H22: 1. And depositing a Si film on the surface of the aluminum-titanium alloy substrate by adopting RF-CVD deposition, wherein the radio frequency power is 600W, the deposition temperature is 200 ℃, and the deposition time is 150 seconds. The reaction gas flow ratio SiH was switched under the same conditions4:O2Deposition of SiO 2:12The film layer was for 280 seconds. Repeatedly and alternately obtaining Si/SiO for two times2/Si/SiO2The highly reflective optical film of (1). For light with the wavelength of 500 nm-600 nm, the reflectivity of the film layer reaches 98.5% -99.2%.
Example 3
As shown in fig. 2 and 3: example 3a method for manufacturing a highly reflective substrate for LED illumination by an IBD method is as follows:
example 3 the nanoimprinted substrate of example 2 was selected and mounted on a stage 15 using an IBD deposition source 13, magnetron sputtering SiO2And Ta2O5Target 14 and working gas O in combined gas holder 172Ar to finish the alternate deposition of 210nm SiO on the surface of the substrate2Film and 190nm of Ta2O5Combined film layer SiO of film2/Ta2O5/SiO2/Ta2O5。
Firstly, feeding and high vacuum pumping of the system
And (3) fixing the aluminum-titanium alloy base material on the workbench 15, closing the feeding door, and starting the vacuum air extractor set 16. When the vacuum of the system reaches 2 multiplied by 10E-3Pa, the workbench 15 is started and the temperature is raised to 250 ℃ and the rotating speed is 45 r.p.m.
Second, IBD film deposition on the substrate surface
O for evacuating the working vacuum chamber2Charging to 1.0 × 10E-1Pa, using Ar as carrier gas for IBD film deposition, wherein the flow rate of Ar is 60sccm2/Ta2O5Depositing a film on the surface of the aluminum-titanium alloy substrate, wherein the radio frequency power of an ion source is 650W, the voltage of an ion speed accelerating grid is 350V, and the magnetron sputtering target 14 is magnetron SiO2And Ta2O5The deposition temperature of the combined target is 250 ℃, and SiO is2Deposition time of 1000 seconds, Ta2O5The deposition time of (3) was 920 seconds. For light with the wavelength of 420 nm-600 nm, the reflectivity of the film layer reaches 98.5% -99.5%.
Example 4
As shown in fig. 2 and 3: embodiment 4 a method for manufacturing a high-reflective heat-dissipating substrate for LED lighting by an ion-assisted electron gun evaporation coating method is as follows:
example 4 a smooth Polycarbonate (PC) substrate with a high transparency and a thickness of 7.0mm is selected, and a nano-hemisphere structure layer with an orderly arranged sphere diameter of 160nm is prepared on the surface of the PC substrate by a nano-imprint process, wherein the distance between a nano-hemisphere point and a point is 200 nm; or single-layer graphene powder is adsorbed on the surface of the nano hemispherical structure layer and is fixed on the workbench 15 along with the base material, and SiO is respectively deposited by using ion assistance and an electron gun2And Ta2O5Optical film, and use of working gas O in combination gas holder 172To complete the alternate deposition of 210nm SiO on the substrate surface2And 190nm of Ta2O5A total reflection optical film.
Firstly, feeding and high vacuum pumping of the system
Fixing a mirror Polycarbonate (PC) substrate with the surface adsorbing 30% or 90% of distribution density of single-layer graphene powder and the high transparent thickness of 2.0mm on a workbench 15, closing a feeding door, and starting a vacuum air extractor set 16. When the vacuum degree of the system reaches 1 multiplied by 10E-3Pa, the workbench 15 is started and the temperature is kept at 60 ℃ and the rotating speed is 60 r.p.m.
Second, the deposition of the ion-assisted electron gun evaporation coating film on the surface of the substrate
CH for evacuating the working vacuum chamber4+H2Charging to 1.0 × 10E-1Pa, with O2As deposited SiO2And Ta2O5A carrier gas for the optical film. SiO evaporation using 15KW electron gun2And Ta2O5The deposition rate is controlled to be 2-3A/Sec, the power of the auxiliary ion source is adjusted to be 300-800 w, the deposition temperature is 60 ℃, and the deposition time is 900-1200 seconds, so that the high-reflection heat-dissipation substrate for LED illumination is manufactured. For 500 nm-600 nm light wavelength, the reflectivity of the film layer reaches 98.5% -99.2%.
Therefore, the method can make full use of the nanoimprint process to manufacture the high-reflection optical film layer and/or utilize the high thermal conductivity coefficient characteristic of the single-layer or multi-layer graphene to improve the electro-optic conversion efficiency and/or heat dissipation of the LED to the maximum extent. The manufactured substrate has good electric light efficiency, weather resistance and high heat conductivity coefficient, and is an efficient green environment-friendly LED chip substrate.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and it is apparent that those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. It is intended that all such modifications and variations fall within the scope of the invention, which is defined by the claims and their equivalents.
Claims (9)
1. A manufacturing method of a high-reflection substrate for LED illumination is characterized by comprising the following steps:
selecting ceramic, metal or non-metal materials or composite materials of the materials as base materials of a substrate, and preparing a geometric three-dimensional structure layer with ordered arrangement and nano size on the surface of the substrate by adopting a nano imprinting process;
depositing an optical material on the surface of the geometric three-dimensional structure layer by adopting a thin film deposition method to form a high-reflection layer, wherein the optical material is at least one metal and/or metal oxide;
the nanometer size comprises a nanometer line width which is 50 nm-500 nm;
the length of the geometric three-dimensional structure layer is 200 nm-800 mu m, the width is 100 nm-900 mu m, and the height is 100 nm-600 nm.
2. The method for manufacturing the highly reflective substrate for LED lighting according to claim 1, wherein the step (2) comprises the following substeps:
placing the substrate with the geometric three-dimensional structure layer in a vacuum chamber, and vacuumizing to a first vacuum pressure, wherein the first vacuum pressure is less than 4.0 multiplied by 10E-3 Pa;
introducing argon, nitrogen, oxygen and SiH into the vacuum chamber4、CH4、C2H2 、CF4Trimethyl aluminum, triethyl aluminum or the mixed gas of the above gases are taken as carrier gas, and the vacuum is pumped to a second vacuum pressure, wherein the second vacuum pressure is more than 1.0 × 10E-1 Pa;
and under the protection of the carrier gas, depositing the optical material on the surface of the geometric three-dimensional structure layer to form a high light reflection layer, wherein the optical material is at least one metal and/or metal oxide.
3. The method for manufacturing the highly reflective substrate for LED lighting according to claim 1, further comprising the following steps after the step (1) and before the step (2):
uniformly distributing graphene powder on the surface of the geometric three-dimensional structure layer to form a heat dissipation layer;
in the step (2), an optical material is deposited on the surface of the heat dissipation layer by using a thin film deposition method to form a high light reflection layer, wherein the optical material is at least one metal and/or metal oxide.
4. The method for manufacturing the highly reflective substrate for LED lighting according to claim 3, wherein the graphene powder comprises a single-layer sheet or a plurality of layers of graphene, the thickness of the single-layer sheet of graphene is 0.33nm, the length of the single-layer sheet of graphene is 3 μm to 5 μm, and the distribution density of the graphene powder is 35% to 96%.
5. The method for manufacturing the highly reflective substrate for LED lighting according to any one of claims 1 to 4, wherein the selected ceramic material is alumina, aluminum nitride, silicon carbide or zirconia;
the selected metal material is iron, steel, copper, aluminum-titanium alloy or aluminum-magnesium alloy;
the selected non-metallic material is polystyrene, polycarbonate, organic glass, ABS plastic, quartz glass or optical glass.
6. The method for manufacturing the highly reflective substrate for LED lighting according to any one of claims 1 to 4, wherein the substrate has a thickness of 0.05mm to 10mm, and at least one surface of the substrate is polished.
7. The method for manufacturing the highly reflective substrate for LED lighting according to any one of claims 1 to 4, wherein the thin film deposition method is one or more of a magnetic filtration multi-arc ion composite coating method, a chemical vapor deposition method, a high energy ion beam sputtering deposition method, a magnetron sputtering deposition method, a monoatomic layer deposition method, and an evaporation coating method.
8. The method for manufacturing the highly reflective substrate for LED lighting according to any one of claims 1 to 4, wherein the optical material is one or more of diamond-like carbon, aluminum oxide, titanium dioxide, silicon dioxide, tantalum pentoxide, zirconium oxide, silver, copper, gold, platinum, silicon, palladium, and rhodium.
9. The method for manufacturing the highly reflective substrate for LED lighting according to any one of claims 1 to 4, wherein the thickness of the highly reflective layer is 0.005 μm to 5 μm, and the highly reflective layer is formed by single-layer deposition or multi-layer alternate deposition.
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| CN104086223A (en) * | 2014-07-23 | 2014-10-08 | 湖南元素密码石墨烯研究院（有限合伙） | Manufacturing method of efficient cooling ceramic substrate for LEDs |
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