CN106498342A - Manufacture method of the LED illumination with high reflective substrate - Google Patents
Manufacture method of the LED illumination with high reflective substrate Download PDFInfo
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Abstract
The present invention relates to a kind of manufacture method of LED illumination with high reflective substrate.The manufacture method is comprised the following steps：(1) composite of pottery, metal or nonmetallic materials or more material is chosen as the base material of substrate, using nano-imprint process, produce ordered arrangement, nano-scale geometry stereochemical structure layer on the surface of substrate；(2) optical material is deposited on the surface of geometry stereochemical structure layer, realizes the total reflection to LED light and the orientation adjustable control to reflection light direction, to obtain high electro-optical efficiency using Film forming method.In addition, using the high thermal conductivity coefficient characteristic of single-layer sheet or multilayer tablet Graphene, radiating to LED is substantially improved, and made substrate has good electrical efficiency, weathering characteristics, high heat conductivity simultaneously, is a kind of LED core plate base of high effective green environmentally friendly.
Description
Technical field
The present invention relates to LED encapsulation technologies, manufacture method of more particularly to a kind of LED illumination with high reflective substrate.
Background technology
LED illumination product is very high due to energy conversion efficiency, energy consumption is theoretically smaller than the 10% of electric filament lamp, compare fluorescent lamp, more than 60% energy-saving effect can be reached, thus there is energy-saving and environmental protection and long-life advantage, the lighting fields such as Landscape Lighting, emergency lighting, special lighting and normal illumination sources are can be widely applied to, market potential is huge.
Generally, the emission wavelength of LED is varied with temperature as 0.02-0.3nm/ DEG C, and spectral width increases therewith, affects bright-colored degree.In addition, when forward current flows through pn-junction, heat generation loss makes interface produce temperature rise, in near room temperature, temperature often raises 1 DEG C, the luminous intensity of LED can correspondingly reduce 0.05-1% or so, be because that added electric energy is completely converted into luminous energy the reason for LED generates heat, but a part transforms into heat energy.The current about 100-160lm/W of commercially available white light LEDs light efficiency, makes after light fixture its electro-optical efficiency only about 20～30% or so.That is about more than 70% electric energy all becomes heat energy.Therefore, radiating and System design technology are the important core break-through points for affecting LED illumination.
The deflection substrate of future development:It is to expect to apply to develop in the LCD backlight module slimming demand of auto navigation, and high-capacity LED can complete three-dimensional encapsulation requirement, substantially deflection substrate is high thermal conductivity and lightweight characteristic using aluminum with aluminum as material, make high-density packages substrate, through reaching deflection characteristic after aluminum substrate thin plate, and can also have high thermal conduction characteristic, but be similarly subjected to the restriction of high-power LED encapsulation heat dissipation problem.
Content of the invention
It is an object of the invention to provide a kind of manufacture method of LED illumination with high reflective substrate, improves electro-optical efficiency.
For solving above-mentioned technical problem, the manufacture method that embodiments of the present invention provide a kind of high reflective substrate of LED illumination, the manufacture method are comprised the following steps：
Step (1), chooses the composite of pottery, metal or nonmetallic materials or more material as the base material of substrate, using nano-imprint process, produces ordered arrangement, nano-scale geometry stereochemical structure layer on the surface of substrate；
Step (2), the surface that optical material is deposited on using Film forming method for geometry stereochemical structure layer, to form high reflector layer, optical material is at least one metal and/or metal-oxide.
Alternatively, step (2) includes following sub-step：The substrate for producing geometry stereochemical structure layer is positioned in vacuum chamber, the first vacuum pressure is evacuated to, the first vacuum pressure is less than 4.0 × 10E-3Pa；The mixed gas of argon, nitrogen, oxygen, SiH4, CH4, C2H2, CF4, trimethyl aluminium, triethyl aluminum or more gas are passed through in a vacuum chamber as carrier gas, and are evacuated to the second vacuum pressure, the second vacuum pressure is more than 1.0 × 10E-1Pa；Under the protection of carrier gas, surface that optical material is deposited on geometry stereochemical structure layer, to form high reflector layer, optical material is at least one metal and/or metal-oxide.
Alternatively, step (1) afterwards, before step (2) further comprising the steps of：The surface that graphene powder is uniformly distributed in geometry stereochemical structure layer, to form heat dissipating layer.In step (2), optical material is deposited on using Film forming method for above-mentioned heat dissipating layer surface, to form high reflector layer, optical material is at least one metal and/or metal-oxide.
Alternatively, graphene powder includes the Graphene of single-layer sheet or multilayer tablet, the Graphene thickness of single-layer sheet is 0.33nm, length is 3 μm～5 μm, and the distribution density (i.e. the area percentage of substrate surface shared by graphene powder) of graphene powder is 35%～96% (preferably 65%～85%).Graphene powder can be conductive graphene powder body or insulation graphene powder.The thickness of multilayer tablet graphene powder is 1nm～3nm.
Alternatively, selected ceramic material is aluminium oxide, aluminium nitride, carborundum or zirconium oxide；Selected metal material is ferrum, steel, copper, aluminum, aluminum titanium alloy or almag；Selected nonmetallic materials are polystyrene, Merlon, lucite, ABS plastic, quartz glass or optical glass.The thickness of substrate is 0.05mm～10mm, and substrate is at least simultaneously burnishing surface.
Alternatively, nano-scale includes nano-scale linewidth, and the nano-scale linewidth is 50nm～500nm.The length of geometry stereochemical structure layer is 200nm～800 μm, width is 100nm～900 μm, be highly 100nm～600nm.
Alternatively, Film forming method is Magnetic filter multi-arc ion recombination film plating method (FCVA), chemical vapour deposition technique (CVD), high energy ion beam sputtering method (IBD), magnetron sputtering deposition method, Atomic layer deposition method (ALD), one or more in evaporation coating of combination.Chemical vapour deposition technique can be electron cyclotron resonance chemical vapor deposition method (ECR-CVD), intermediate frequency or radio frequency chemical vapour deposition technique (RF-CVD).Magnetron sputtering deposition method can be direct current, intermediate frequency or r. f. magnetron sputtering method.Evaporation coating can be electron gun or laser beam evaporation plated film.In a preference, optical material is deposited on using Film forming method graphene powder or geometry stereochemical structure layer surface when, meet following sedimentary condition：Depositing temperature is 30～120 DEG C (preferably 40～80 DEG C), and sedimentation time is 500～3000 seconds (preferably 520～800 seconds).
In each preference, following condition need to be met using electron cyclotron resonance chemical vapor deposition method (ECR-CVD)：Microwave power is 250W～400W (preferably 300W)；Following condition need to be met using intermediate frequency or radio frequency chemical vapour deposition technique (RF-CVD)：Radio-frequency power is 500W～700W (preferably 600W), accelerating grid electrode voltage is 250V～400V (preferably 300V)；Following condition need to be met using high energy ion beam sputtering method (IBD)：Ion source radio-frequency power is 600W～800W (preferably 700W), and ion speed accelerating grid electrode voltage is 250V～400V (preferably 300V)；
Alternatively, optical material is diamond like carbon, aluminium sesquioxide, Titanium Dioxide, silicon dioxide, tantalum pentoxide, zirconium oxide, silver, copper, gold, platinum, silicon, palladium, one or more in rhodium of composition.
Alternatively, the thickness of high reflector layer is 0.005 μm～5 μm.High reflector layer can be formed by monolayer deposition or multilamellar alternating deposit.
The present invention has following features compared with prior art：
(1) by adopting nano-imprint process, produce ordered arrangement, nano-scale geometry stereochemical structure layer on the surface of substrate to adjust LED-baseplate to the reflection direction of light and deposit high reflection blooming to obtain high electro-optical efficiency.
(2) using the overall characteristic of Graphene, make high reflection thin film that there is high printing opacity, weatherability and radiating, the emission wavelength that this feature optical reflectance coating can efficiently control LED is not varied with temperature and changes, guarantees the vividness of LED chip long-term efficiently steady operation and color.
Description of the drawings
Fig. 1 is the schematic flow sheet of the LED illumination manufacture method of high reflective substrate in first embodiment of the invention；
Fig. 2 is the structural representation of the high reflective substrate of LED illumination in second embodiment of the invention；
Fig. 3 is the structural representation of vacuum chamber in second embodiment of the invention.
Specific embodiment
In the following description, in order that reader more fully understands the application and proposes many ins and outs.But, even if it will be understood by those skilled in the art that there is no these ins and outs and many variations based on following embodiment and modification, it is also possible to realize each claim of the application technical scheme required for protection.
For making the object, technical solutions and advantages of the present invention clearer, embodiments of the present invention are described in further detail below in conjunction with accompanying drawing.
First embodiment of the invention is related to a kind of manufacture method of LED illumination with high reflective substrate.Fig. 1 is schematic flow sheet of the LED illumination with the manufacture method of high reflective substrate.As shown in figure 1, the LED illumination is comprised the following steps with the manufacture method of high reflective substrate：
In a step 101, the composite of pottery, metal or nonmetallic materials or more material is chosen as the base material of substrate, using nano-imprint process, produce ordered arrangement, nano-scale geometry stereochemical structure layer on the surface of substrate.
Then into step 102, the surface that optical material is deposited on geometry stereochemical structure layer using Film forming method, to form high reflector layer, optical material is at least one metal and/or metal-oxide.
Hereafter process ends.
Used as optional embodiment, above-mentioned steps 102 include following sub-step：
The substrate for producing geometry stereochemical structure layer is positioned in vacuum chamber, the first vacuum pressure is evacuated to, the first vacuum pressure is less than 4.0 × 10E-3Pa；
The mixed gas of argon, nitrogen, oxygen, SiH4, CH4, C2H2, CF4, trimethyl aluminium, triethyl aluminum or more gas are passed through in a vacuum chamber as carrier gas, and are evacuated to the second vacuum pressure, the second vacuum pressure is more than 1.0 × 10E-1Pa；
Under the protection of carrier gas, surface that optical material is deposited on geometry stereochemical structure layer, to form high reflector layer, optical material is at least one metal and/or metal-oxide.
In the other embodiment of the present invention, it is also possible to or be passed through the other materials that mixes with optical material to form high reflector layer under other vacuum environments, above-mentioned order and parameter setting is not limited to.
Second embodiment of the invention is related to a kind of manufacture method of LED illumination with high reflective substrate.Second embodiment is improved on the basis of first embodiment.Specifically：
Further comprising the steps of after step 101, before step 102：
The surface that graphene powder is uniformly distributed in geometry stereochemical structure layer, to form heat dissipating layer.
In a step 102, optical material is deposited on using Film forming method the surface of heat dissipating layer, to form high reflector layer, optical material is at least one metal and/or metal-oxide.
Hereinafter said method will be described in detail to embodiment 4 with embodiment 1.
Fig. 2 is the structural representation of the high reflective substrate of a preferred LED illumination.As shown in Fig. 2 the high reflective substrate of the LED illumination includes substrate 1, high reflector layer 2, insulating radiation coating 3 and LED encapsulation chip 4.In preference, also include the heat dissipating layer formed by graphene powder between the high reflector layer 2 and the substrate 1.The substrate 1 can be rigid or flexible.
Fig. 3 is the structural representation of a preferred vacuum chamber.As shown in figure 3, the vacuum chamber includes ECR-CVD sedimentary origins 11, RF-CVD sedimentary origins 12, IBD sedimentary origins 13, target 14, workbench 15, vacuum suction unit 16 and combination gas holder 17.
Embodiment 1 and embodiment 2 are mainly illustrated by taking ECR-CVD methods and RF-CVD methods in CVD as an example.It is appreciated that in other embodiments of the invention, it would however also be possible to employ optical material is deposited on other CVD methods the surface of graphene powder or geometry stereochemical structure layer.
Embodiment 1
As shown in Figures 2 and 3：Embodiment 1 with CVD in ECR-CVD methods to make a kind of LED illumination as follows with the manufacture method of high reflective heat-radiating substrate：
From the thick aluminium oxide ceramics base materials of the 0.2mm of single-sided polishing, the sphere diameter for producing ordered arrangement in the ceramic substrate surface nano-imprint process is the nano-hemisphere body structure sheaf of 160nm to embodiment 1, and nano-hemisphere body point is 200nm with spacing in point.The length of nano-hemisphere body structure is 700 μm, and width is 800 μm, is highly 500nm.The surface that single-layer sheet graphene powder is adsorbed in nano-hemisphere body structure sheaf, and be fixed on workbench 15 with ceramic base material, using ECR-CVD sedimentary origins 11 and using the working gas CH in combination gas holder 174、H2To complete to deposit ceramic substrate surface 0.1 μm of diamond like carbon (DLC) thin film.
First, system feeding and pumping high vacuum
The ceramic base material of the single-layer sheet graphene powder of 60% distribution density of surface adsorption is fixed on workbench 15, feeding gate is closed, starts vacuum suction unit 16.When system vacuum reaches 1 × 10E-3Pa, start workbench 15 and be warming up to 40 DEG C, rotating speed 60r.p.m.
2nd, substrate surface ECR-CVD thin film depositions
Working vacuum CH by vacuum chamber4+H21.0 × 10E-1Pa is charged to, with CH4+H2As DLC film deposition carrier gas, flow-rate ratio CH4:H2=8:2.The surface that DLC film is deposited on using ECR-CVD depositions for single-layer sheet graphene powder, form compound Graphene powder thin-film layers, under microwave power 300W, 40 DEG C of depositing temperature, the sedimentation time sedimentary condition of 520 seconds, that is, LED illumination is made with high reflective heat-radiating substrate.
Embodiment 2
As shown in Figures 2 and 3：It is as follows with the manufacture method of high reflective substrate that embodiment 2 makes a kind of LED illumination in RF-CVD methods：
Aluminum titanium alloy base material of the embodiment 2 from the thick single-sided polishings of 1.0mm, substrate surface nano-imprint process produce ordered arrangement, nano-scale linewidth be 220nm, line and line be spaced from 100nm to 500nm concentric geometric form ring group not etc. into the thick stereochemical structure layers of 240nm.The length of the stereochemical structure layer is 300nm, and width is 200nm.Base material is fixed on workbench 15, using RF-CVD sedimentary origins 12 and using the working gas SiH in combination gas holder 174、H2、O2Replace layer film to complete to deposit substrate surface 0.05 μm of Si/SiO2.
First, system feeding and pumping high vacuum
Aluminum titanium alloy base material is fixed on workbench 15, feeding gate is closed, starts vacuum suction unit 16.When system vacuum reaches 2 × 10E-3Pa, start workbench 15 and be warming up to 200 DEG C, rotating speed 45r.p.m.
2nd, substrate surface RF-CVD thin film depositions
Working vacuum SiH by vacuum chamber4+H21.0 × 10E-1Pa is charged to, with SiH4+H2As Si thin film deposition carrier gas, flow-rate ratio SiH4:H2=2:1.Using RF-CVD depositions by Si thin film depositions in the surface of aluminum titanium alloy base material, wherein radio-frequency power is 600W, and depositing temperature is 200 DEG C, and sedimentation time is 150 seconds.Under similarity condition, switching reaction gas flow compares SiH4:O2=2:1, deposit SiO2Film layer 280 seconds.Repeat the secondary acquisition Si/SiO of alternating2/Si/SiO2High reflection blooming.For the light of 500nm～600nm wavelength, the reflectance of the film layer reaches 98.5%～99.2%.
Embodiment 3
As shown in Figures 2 and 3：It is as follows with the manufacture method of high reflective substrate that embodiment 3 makes a kind of LED illumination in IBD methods：
Embodiment 3 is fixed on base material on workbench 15, using IBD sedimentary origins 13, magnetron sputtering SiO from the nano impression base material in embodiment 22And Ta2O5Working gas O in target 14 and use combination gas holder 172, Ar to be completing the SiO to substrate surface alternating deposit 210nm2Thin film and the Ta of 190nm2O5Combination film layer SiO of thin film2/Ta2O5/SiO2/Ta2O5.
First, system feeding and pumping high vacuum
Aluminum titanium alloy base material is fixed on workbench 15, feeding gate is closed, starts vacuum suction unit 16.When system vacuum reaches 2 × 10E-3Pa, start workbench 15 and be warming up to 250 DEG C, rotating speed 45r.p.m.
2nd, substrate surface IBD thin film depositions
Working vacuum O by vacuum chamber21.0 × 10E-1Pa is charged to, using Ar as IBD thin film deposition carrier gas, flow is Ar=60sccm.Deposited SiO using IBD2/Ta2O5Thin film deposition is 650W in the surface of aluminum titanium alloy base material, wherein ion source radio-frequency power, and ion speed accelerating grid electrode voltage is 350V, and magnetic controlled sputtering target 14 is magnetic control SiO2And Ta2O5Combination target, depositing temperature are 250 DEG C, SiO2Sedimentation time be 1000 seconds, Ta2O5Sedimentation time be 920 seconds.For the light of 420nm～600nm wavelength, the reflectance of the film layer reaches 98.5%～99.5%.
Embodiment 4
As shown in Figures 2 and 3：It is as follows with the manufacture method of high reflective heat-radiating substrate that embodiment 4 makes a kind of LED illumination in ion auxiliary electron rifle evaporation coating method：
Embodiment 4 selects high transparency thickness in bright finish Merlon (PC) base material of 7.0mm, and in the nano-hemisphere body structure sheaf, nano-hemisphere body point that the sphere diameter that PC substrate surface nano-imprint process produces ordered arrangement is 160nm with point, spacing is 200nm；Or single-layer sheet graphene powder is adsorbed in the surface of nano-hemisphere body structure sheaf, and be fixed on workbench 15 with base material, SiO is deposited respectively using ion auxiliary and electron gun2And Ta2O5Blooming, and using the working gas O in combination gas holder 172To complete the SiO of the alternating deposit 210nm to substrate surface2Ta with 190nm2O5ATR Optical thin film.
First, system feeding and pumping high vacuum
Minute surface Merlon (PC) base material of the high transparency thickness of the single-layer sheet graphene powder of surface adsorption 30% or 90% distribution density in 2.0mm is fixed on workbench 15, feeding gate is closed, starts vacuum suction unit 16.When system vacuum reaches 1 × 10E-3Pa, start workbench 15 and be incubated to 60 DEG C, rotating speed 60r.p.m.
2nd, substrate surface ion auxiliary electron rifle evaporation plating thin film deposition
Working vacuum CH by vacuum chamber4+H21.0 × 10E-1Pa is charged to, with O2As deposition SiO2And Ta2O5Optical thin film carrier gas.Using 15KW electron gun evaporation SiO2And Ta2O5, in 2～3A/Sec, assisting ion source power is adjusted between 300w～800w, 60 DEG C of depositing temperature, sedimentation time 900～1200 seconds, that is, make LED illumination with high reflective heat-radiating substrate for sedimentation rate control.For 500nm～600nm optical wavelength, the reflectance of the film layer reaches 98.5%～99.2%.
Therefore, said method can make full use of high thermal conductivity coefficient characteristic of the nano-imprint process to make high reflection optical film and/or using single-layer sheet or multilayer tablet Graphene, substantially improve the electro-optical efficiency to LED and/or radiating.Made substrate has good electrical efficiency, weathering characteristics, high heat conductivity simultaneously, is a kind of LED core plate base of high effective green environmentally friendly.
The preferred embodiments of the present invention are these are only, the present invention is not limited to, it is clear that those skilled in the art can carry out various changes, modification without departing from the spirit and scope of the present invention to the present invention.If these modifications and modification to the present invention belong within the scope of the claims in the present invention and its equivalent technologies, protection scope of the present invention is belonged to.
Claims (10)
1. manufacture method of a kind of LED illumination with high reflective substrate, it is characterised in that the manufacture method is comprised the following steps：
Step (1), chooses the base material of the composite as substrate of pottery, metal or nonmetallic materials or more material, adopts
Nano-imprint process, produces ordered arrangement, nano-scale geometry stereochemical structure layer on the surface of the substrate；
Step (2), the surface that optical material is deposited on the geometry stereochemical structure layer using Film forming method are high anti-to be formed
Photosphere, the optical material are at least one metal and/or metal-oxide.
2. manufacture method of the LED illumination according to claim 1 with high reflective substrate, it is characterised in that the step
(2) include following sub-step：
The substrate for producing the geometry stereochemical structure layer is positioned in vacuum chamber, the first vacuum pressure is evacuated to, this is first true
Pneumatics is less than 4.0 × 10E-3Pa；
Be passed through in the vacuum chamber argon, nitrogen, oxygen, SiH4, CH4, C2H2, CF4, trimethyl aluminium, three
The mixed gas of aluminium ethide or more gas are used as carrier gas, and are evacuated to the second vacuum pressure, second vacuum pressure more than 1.0 ×
10E-1Pa；
Under the protection of the carrier gas, the optical material is deposited on the geometry stereochemical structure layer surface is high anti-to be formed
Photosphere, the optical material are at least one metal and/or metal-oxide.
3. manufacture method of the LED illumination according to claim 1 with high reflective substrate, it is characterised in that in the step
Suddenly (1) afterwards, further comprising the steps of before the step (2)：
The surface that graphene powder is uniformly distributed in the geometry stereochemical structure layer, to form heat dissipating layer；
In the step (2), optical material is deposited on the heat dissipating layer using Film forming method surface is high anti-to be formed
Photosphere, the optical material are at least one metal and/or metal-oxide.
4. manufacture method of the LED illumination according to claim 3 with high reflective substrate, it is characterised in that the graphite
Alkene powder body includes the Graphene of single-layer sheet or multilayer tablet, and it is 3 μm～5 μm that the Graphene thickness of the single-layer sheet is 0.33nm, length,
The distribution density of the graphene powder is 35%～96%.
5. manufacture method of the LED illumination according to any one of claim 1 to 4 with high reflective substrate, its feature exist
In selected ceramic material is aluminium oxide, aluminium nitride, carborundum or zirconium oxide；
Selected metal material is ferrum, steel, copper, aluminum, aluminum titanium alloy or almag；
Selected nonmetallic materials are polystyrene, Merlon, lucite, ABS plastic, quartz glass or optics glass
Glass.
6. manufacture method of the LED illumination according to any one of claim 1 to 4 with high reflective substrate, its feature exist
In the thickness of the substrate is 0.05mm～10mm, and the substrate is at least simultaneously burnishing surface.
7. manufacture method of the LED illumination according to any one of claim 1 to 4 with high reflective substrate, its feature exist
In the nano-scale includes nano-scale linewidth, and the nano-scale linewidth is 50nm～500nm；
The length of the geometry stereochemical structure layer is 200nm～800 μm, width is 100nm～900 μm, is highly
100nm～600nm.
8. manufacture method of the LED illumination according to any one of claim 1 to 4 with high reflective substrate, its feature exist
In the Film forming method is Magnetic filter multi-arc ion recombination film plating method, chemical vapour deposition technique, energetic ion beam sputter-deposition
The combination of one or more in method, magnetron sputtering deposition method, Atomic layer deposition method, evaporation coating.
9. manufacture method of the LED illumination according to any one of claim 1 to 4 with high reflective substrate, its feature exist
In, the optical material be diamond like carbon, aluminium sesquioxide, Titanium Dioxide, silicon dioxide, tantalum pentoxide, zirconium oxide,
The composition of one or more in silver, copper, gold, platinum, silicon, palladium, rhodium.
10. manufacture method of the LED illumination according to any one of claim 1 to 4 with high reflective substrate, its feature exist
In the thickness of the high reflector layer is 0.005 μm～5 μm, and the high reflector layer is formed by monolayer deposition or multilamellar alternating deposit.
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