CN104086223B - The making method of a kind of LED high efficiency and heat radiation ceramic substrate - Google Patents
The making method of a kind of LED high efficiency and heat radiation ceramic substrate Download PDFInfo
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- CN104086223B CN104086223B CN201410352076.0A CN201410352076A CN104086223B CN 104086223 B CN104086223 B CN 104086223B CN 201410352076 A CN201410352076 A CN 201410352076A CN 104086223 B CN104086223 B CN 104086223B
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Abstract
The making method of a kind of LED high efficiency and heat radiation ceramic substrate, comprise the following steps: (1) select surface adsorption distribution density be the ceramic substrate of 5% ~ 90% Graphene powder body as processing base material, and pumping high vacuum is to vacuum tightness > 4.0 �� 10E-3Pa; (2) using rare gas element or reactant gases or the mixed gas of the two as carrier gas, under the working vacuum environment that vacuum tightness is 1.0 �� more than 10E-1Pa, adopt sedimentation that at least one material film is deposited on the surface of Graphene powder body and the ceramic substrate being adsorbed on ceramic substrate, depositing temperature is 25 ~ 125 DEG C, and depositing time is 1200 ~ 5000 seconds. The thermal conductivity of the ceramic substrate obtained by the present invention > 800 ~ 3600W/ (m K), not only meet thermal conductivity well simultaneously but also good insulating, it is applicable to the heat dispersion substrate of various semi-conductor chip.
Description
Technical field
The present invention relates to the making method of a kind of LED high efficiency and heat radiation ceramic substrate.
Background technology
LED illumination product due to energy conversion efficiency very high, energy consumption only has the 10% of incandescent light in theory, compare luminescent lamp, the energy-saving effect of 50% can be reached, thus there is energy-saving and environmental protection and long-life advantage, can being widely used in the lighting fields such as Landscape Lighting, safety lighting, special lighting and normal illumination sources, market potential is huge.
Generally, the emission wavelength of LED varies with temperature and is 0.2 ~ 0.3nm/ DEG C, and spectral width increases thereupon, affects color vividness. In addition, when forward current flows through pn knot, when heat generation loss makes interface produce temperature rise, near room temperature, temperature often raises 1 DEG C, it is that the electric energy owing to adding all is not converted into luminous energy that the luminous intensity of LED can correspondingly reduce the reason of about 1%, LED heating, but a part transforms into heat energy. The light effect at present only 100lm/W of LED, its electro-optical efficiency approximately only about 20 ~ 30%, that is the electric energy of about 70% all becomes heat energy. Therefore, the core breakthrough point affecting high-power LED illumination is heat dissipation technology.
Almost most LED chip heat dispersion substrates is Al2O3Pottery, silicon carbide, silicon chip, AlN compound Al2O3Ceramic substrate. One layer of isolator then requires that its insulating property are fine below, but also wants heat conductivility fine. But these two performances are contradiction, are all the good heat conductivity of conductor usually, and the heat conductivility of isolator is poor. Not only met thermal conductivity well simultaneously but also good insulating be difficult to accomplish.
Summary of the invention
The making method of the LED high efficiency and heat radiation ceramic substrate that it is an object of the invention to overcome the above-mentioned deficiency of prior art and provide a kind of reliability high so that ceramic substrate had not only met thermal conductivity well simultaneously but also good insulating.
The technical scheme of the present invention is: the making method of a kind of LED high efficiency and heat radiation ceramic substrate, comprises the following steps:
(1) pumping high vacuum: select surface adsorption distribution density be the ceramic substrate of 5% ~ 90% Graphene powder body as processing base material, and pumping high vacuum is to vacuum tightness > 4.0 �� 10E-3Pa;
(2) thin film deposition: using rare gas element or reactant gases or the mixed gas of the two as carrier gas, under the working vacuum environment that vacuum tightness is 1.0 �� more than 10E-1Pa, adopt sedimentation that at least one material film is deposited on the surface of Graphene powder body and the ceramic substrate being adsorbed on ceramic substrate, depositing temperature is 25 ~ 125 DEG C, depositing time is 1200 ~ 5000 seconds, obtains LED high efficiency and heat radiation ceramic substrate.
Further, described Graphene powder body is conduction or the insulation Graphene powder body of single-layer sheet or multilayer tablet, the conduction of described single-layer sheet or the thickness of insulation Graphene powder body are 0.33nm, and length is 3um ~ 5um, and the conduction of described multilayer tablet or the thickness of insulation Graphene powder body are 1nm ~ 3nm.
Further, described sedimentation selects one or more depositional modes in Magnetic filter multi-arc ion recombination film plating method (FCVA), electron cyclotron resonance chemical vapor deposition method (ECR-CVD), high energy ion beam sputtering method (IBD), intermediate frequency or radio frequency chemical Vapor deposition process (RF-CVD), organometallics chemical Vapor deposition process (MOCVD), Atomic layer deposition method (ALD) to combine.
Further, described material film is the one in SiC, TiAlN, AlN, Ag, Cu, Al, Sn, Au, DLC, GaN, InGaAsP, InAlGaAsP, InP.
Further, the deposit thickness of described material film is the preferred 0.25um ~ 0.5um of 0.1um ~ 2.0um().
Further, when adopting intermediate frequency or radio frequency chemical Vapor deposition process that at least one material film is deposited on the Graphene powder body being adsorbed on ceramic substrate and ceramic substrate surperficial, meet the following conditions: radio frequency power is the preferred 600W of 500W ~ 700W(), accelerating grid electrode voltage is the preferred 300V of 250V ~ 400V().
Further, when adopting high energy ion beam sputtering method that at least one material film is deposited on the Graphene powder body being adsorbed on ceramic substrate and ceramic substrate surperficial, meet the following conditions: ion source radio frequency power is the preferred 700W of 600W ~ 800W(), ion speed accelerating grid electrode voltage is the preferred 300V of 250V ~ 400V().
Further, in step (1), the distribution density of described Graphene powder body is 50% ~ 80%.
Further, in step (2), described depositing temperature is 26 ~ 45 DEG C, and depositing time is 1250 ~ 1650 seconds.
The present invention compared with prior art has following feature:
(1) super thermal conductivity (5300W/m K) characteristic of Graphene is utilized, by regulating the deposit thickness of the distribution density of Graphene powder body on ceramic substrate and deposit film, make the made of new structural material forming a kind of continuous compound between deposit film and Graphene powder body and ceramic substrate so that ceramic substrate had not only met thermal conductivity well simultaneously but also good insulating;
(2) thermal conductivity of the high efficiency and heat radiation ceramic substrate obtained by > 800 ~ 3600W/ (m K), higher than ceramic copper-clad plate DCB(about 200 ~ 800W/m K) and the thermal conductivity of AlN ceramic (about 150 ~ 180W/m K);
(3) made of new structural material of the continuous compound formed between deposit film and Graphene powder body and ceramic substrate is a kind of high efficiency and heat radiation ceramic substrate, this substrate can be used for the heat dispersion substrate of various semi-conductor chip, as in the heat dissipation ceramic substrate of great power LED, high-power semiconductor laser chip heat dissipation ceramic substrate and the various device to temperature sensitive, applied widely.
Accompanying drawing explanation
Fig. 1 is the structural representation of ceramic substrate making equipment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment 1
As shown in Figure 1: it is as follows that the present embodiment makes a kind of LED high efficiency and heat radiation ceramic substrate with ECR-CVD method:
The present embodiment is selected ECR-CVD deposition source 1 and is used the working gas CH in combination gas holder 74��C2H2��H2Complete the diamond-film-like (DLC) to processing base material 8 surface deposition 0.25um; Wherein, C2H2Be mainly used in increasing sedimentation velocity, be a kind of can the gas of choice for use.
One, system feeding and pumping high vacuum
By the single-layer sheet Graphene powder body (thickness is 0.33nm, and length is 3um ~ 5um) of surface adsorption 50% distribution density
Ceramic substrate as processing base material 8, be fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 �� 10E-3Pa, start worktable 5 and be also warming up to 26 DEG C, rotating speed 45r.p.m.
Two, substrate surface ECR-CVD thin film deposition
It is filled with CH to vacuum chamber4+H2It is 1.0 �� 10E-1Pa to vacuum tightness, with CH4+H2Use as DLC film deposition
Carrier gas, throughput ratio CH4:H2=9:1, adopts ECR-CVD deposition that DLC film is deposited on the surface of single-layer sheet Graphene powder body and the ceramic substrate being adsorbed on ceramic substrate, and wherein microwave power is 200W, and base material temperature is 26 DEG C, and depositing time is 1250 seconds.
The thermal conductivity of the high efficiency and heat radiation ceramic substrate three, obtained: > 2000 ~ 3000W/ (m K).
Embodiment 2
As shown in Figure 1: it is as follows that the present embodiment makes a kind of LED high efficiency and heat radiation ceramic substrate with RF-CVD method:
The present embodiment is selected RF-CVD deposition source 2 and is used the working gas CH in combination gas holder 74��C2H2��H2Complete the diamond-film-like (DLC) to processing base material 8 surface deposition 0.50um.
One, system feeding and pumping high vacuum
By the single-layer sheet Graphene powder body of surface adsorption 80% distribution density, (thickness is 0.33nm, length is 3um ~ 5um) ceramic substrate as processing base material 8, it is fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 �� 10E-3Pa, start worktable 5 and it is warming up to 45 DEG C, rotating speed 45r.p.m.
Two, substrate surface RF-CVD thin film deposition
It is filled with CH to vacuum chamber4+H2It is 1.0 �� 10E-1Pa to vacuum tightness, with CH4+H2As DLC film deposition carrier gas, throughput ratio CH4:H2=9:1, adopts RF-CVD deposition that DLC film is deposited on the surface of single-layer sheet Graphene powder body and the ceramic substrate being adsorbed on ceramic substrate, and wherein radio frequency power is 600W, and accelerating grid electrode voltage is 300V, and base material temperature is 45 DEG C, and depositing time is 1650 seconds.
The thermal conductivity of the high efficiency and heat radiation ceramic substrate three, obtained: > 2800 ~ 3600W/ (m K)
Embodiment 3
As shown in Figure 1: it is as follows that the present embodiment makes a kind of LED high efficiency and heat radiation ceramic substrate with RF-CVD method:
The present embodiment is selected RF-CVD deposition source 2 and is used the working gas CH in combination gas holder 74��C2H2��H2Complete the diamond-film-like (DLC) to processing base material 8 surface deposition 0.50um.
One, system feeding and pumping high vacuum
By the single-layer sheet Graphene powder body of surface adsorption 10% distribution density, (thickness is 0.33nm, length is 3um ~ 5um) ceramic substrate as processing base material 8, it is fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 �� 10E-3Pa, start worktable 5 and it is warming up to 45 DEG C, rotating speed 45r.p.m.
Two, substrate surface RF-CVD thin film deposition
It is filled with CH to vacuum chamber4+H2It is 1.0 �� 10E-1Pa to vacuum tightness, with CH4+H2As DLC film deposition carrier gas, throughput ratio CH4:H2=9:1, adopts RF-CVD deposition that DLC film is deposited on the surface of single-layer sheet Graphene powder body and the ceramic substrate being adsorbed on ceramic substrate, and wherein radio frequency power is 600W, and accelerating grid electrode voltage is 300V, and base material temperature is 45 DEG C, and depositing time is 1650 seconds.
The thermal conductivity of the high efficiency and heat radiation ceramic substrate three, obtained: > 800 ~ 1200W/ (m K)
Embodiment 4
As shown in Figure 1: it is as follows that the present embodiment makes a kind of LED high efficiency and heat radiation ceramic substrate with IBD method:
The present embodiment is selected IBD deposition source 3, magnetron sputtering target 4 and is used the working gas N in combination gas holder 72, Ar complete to processing base material 8 surface deposition 1.5um aluminium nitride (AlN).
One, system feeding and pumping high vacuum
By the single-layer sheet Graphene powder body of surface adsorption 50% distribution density, (thickness is 0.33nm, length is 3um ~ 5um) ceramic substrate as processing base material 8, it is fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 �� 10E-3Pa, start worktable 5 and it is warming up to 120 DEG C, rotating speed 45r.p.m.
Two, substrate surface IBD thin film deposition
It is filled with N to vacuum chamber2It is 1.0 �� 10E-1Pa to vacuum tightness, using Ar as IBD thin film deposition carrier gas, flow is Ar=60sccm, adopt IBD deposition by AlN thin film deposition in the surface of the single-layer sheet Graphene powder body being adsorbed on ceramic substrate and ceramic substrate, wherein ion source radio frequency power is 700W, and ion speed accelerating grid electrode voltage is 300V, and magnetron sputtering target 4 is magnetic control aluminium target, base material temperature is 120 DEG C, and depositing time is 5000 seconds.
The thermal conductivity of the high efficiency and heat radiation ceramic substrate three, obtained: > 1200 ~ 2000W/ (m K).
Embodiment 5
As shown in Figure 1: it is as follows that the present embodiment makes a kind of LED high efficiency and heat radiation ceramic substrate with IBD method:
The present embodiment is selected IBD deposition source 3, magnetron sputtering target 4 and is used the working gas N in combination gas holder 72, Ar complete to processing base material 8 surface deposition 1.5um aluminium nitride (AlN).
One, system feeding and pumping high vacuum
Using the ceramic substrate of the multilayer tablet Graphene powder body (thickness is 1nm ~ 3nm) of surface adsorption 50% distribution density as processing base material 8, it is fixed on worktable 5, close feeding gate, start vacuum suction unit 6, when system vacuum reaches 2 �� 10E-3Pa, start worktable 5 and it is warming up to 120 DEG C, rotating speed 45r.p.m.
Two, substrate surface IBD thin film deposition
It is filled with N to vacuum chamber2It is 1.0 �� 10E-1Pa to vacuum tightness, using Ar as IBD thin film deposition carrier gas, flow is Ar=60sccm, adopt IBD deposition by AlN thin film deposition in the surface of the multilayer tablet Graphene powder body being adsorbed on ceramic substrate and ceramic substrate, wherein ion source radio frequency power is 650W, and ion speed accelerating grid electrode voltage is 350V, and magnetron sputtering target 4 is magnetic control aluminium target, base material temperature is 120 DEG C, and depositing time is 3600 seconds.
The thermal conductivity of the high efficiency and heat radiation ceramic substrate three, obtained: > 1000 ~ 1500W/ (m K).
By above-described embodiment diamond-film-like deposition or aluminium nitride, make the made of new structural material forming a kind of continuous compound between deposit film and Graphene powder body and ceramic substrate, solve a difficult problem for isolator heat conductivility difference. The thermal conductivity of high efficiency and heat radiation ceramic substrate > 800 ~ 3600W/ (m K), higher than ceramic copper-clad plate DCB(about 200 ~ 800W/m K) and the thermal conductivity of AlN ceramic (about 150 ~ 180W/m K).
These are only the preferred embodiments of the present invention, be not limited to the present invention, it is clear that the technician of this area the present invention can be carried out various change, modification and do not depart from the spirit and scope of the present invention. If these amendments and modification to the present invention belong within the scope of the claims in the present invention and equivalent technologies thereof, all belong to protection scope of the present invention.
Claims (10)
1. the LED making method of high efficiency and heat radiation ceramic substrate, it is characterised in that: comprise the following steps:
(1) pumping high vacuum: select surface adsorption distribution density be the ceramic substrate of 5% ~ 90% Graphene powder body as processing base material, and pumping high vacuum is to vacuum tightness > 4.0 �� 10E-3Pa;
(2) thin film deposition: using rare gas element or reactant gases or the mixed gas of the two as carrier gas, under the working vacuum environment that vacuum tightness is 1.0 �� more than 10E-1Pa, adopt sedimentation that at least one material film is deposited on the surface of Graphene powder body and the ceramic substrate being adsorbed on ceramic substrate, depositing temperature is 25 ~ 125 DEG C, depositing time is 1200 ~ 5000 seconds, obtains LED heat dissipation ceramic substrate.
2. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 1, it is characterized in that: described Graphene powder body is conduction or the insulation Graphene powder body of single-layer sheet or multilayer tablet, the conduction of described single-layer sheet or the thickness of insulation Graphene powder body are 0.33nm, length is 3um ~ 5um, and the conduction of described multilayer tablet or the thickness of insulation Graphene powder body are 1nm ~ 3nm.
3. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 1 or 2, it is characterised in that: described sedimentation selects one or more depositional modes in Magnetic filter multi-arc ion recombination film plating method, electron cyclotron resonance chemical vapor deposition method, high energy ion beam sputtering method, intermediate frequency or radio frequency chemical Vapor deposition process, organometallics chemical Vapor deposition process, Atomic layer deposition method to combine.
4. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 1 or 2, it is characterised in that: described material film is the one in SiC, TiAlN, AlN, Ag, Cu, Al, Sn, Au, DLC, GaN, InGaAsP, InAlGaAsP, InP.
5. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 3, it is characterised in that: described material film is the one in SiC, TiAlN, AlN, Ag, Cu, Al, Sn, Au, DLC, GaN, InGaAsP, InAlGaAsP, InP.
6. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 4, it is characterised in that: the deposit thickness of described material film is 0.1um ~ 2.0um.
7. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 3, it is characterized in that: when adopting intermediate frequency or radio frequency chemical Vapor deposition process that at least one material film is deposited on the Graphene powder body being adsorbed on ceramic substrate and ceramic substrate surperficial, meeting the following conditions: radio frequency power is 500W ~ 700W, accelerating grid electrode voltage is 250V ~ 400V.
8. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 3, it is characterized in that: when adopting high energy ion beam sputtering method that at least one material film is deposited on the Graphene powder body being adsorbed on ceramic substrate and ceramic substrate surperficial, meeting the following conditions: ion source radio frequency power is 600W ~ 800W, ion speed accelerating grid electrode voltage is 250V ~ 400V.
9. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 1 or 2, it is characterised in that: in step (1), the distribution density of described Graphene powder body is 50% ~ 80%.
10. the LED making method of high efficiency and heat radiation ceramic substrate according to claim 1 or 2, it is characterised in that: in step (2), described depositing temperature is 26 ~ 45 DEG C, and depositing time is 1250 ~ 1650 seconds.
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| CN105506624B (en) * | 2015-12-22 | 2018-01-16 | 北京大学东莞光电研究院 | A kind of film plating process of aluminum nitride ceramic substrate |
| CN107311666A (en) * | 2017-05-23 | 2017-11-03 | 福建华清电子材料科技有限公司 | The shaping of low-temperature co-fired ceramic substrate and sintering method |
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