CN102738377B - Superhigh heat conduction metal-based circuit board as well as preparation method and applications thereof - Google Patents
Superhigh heat conduction metal-based circuit board as well as preparation method and applications thereof Download PDFInfo
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Abstract
The invention provides a superhigh heat conduction metal-based circuit board as well as a preparation method thereof. A layer of AIN (aluminum nitride) ceramic coating or AIN+DLC (aluminum nitride+diamond like carbon) composite coating is coated on the surface of a metal-based plate material, such as aluminum, copper so as to form a superhigh heat conduction circuit board. The superhigh heat conduction metal-based circuit board is applied to the fields which need superhigh heat conduction, such as high-power LED (light-emitting diode) devices or modules, improves the heat conduction and heat radiation capability of a base plate as well as meets the requirements of heat conduction and dissipation of electric appliance.
Description
Technical field
The present invention relates to and a kind of there is metal base circuit board of super-high heat-conductive performance and preparation method thereof, belong to electronic technology field.
Background technology
Industrially, some thermals source or light source, such as emerging LED component or module, often need quick conductive and heat radiation.LED has the advantages such as energy-saving and environmental protection, becomes forth generation solid state lighting light fixture.LED develops into field of illuminating lamps from signal lamp to be needed to improve power, and namely research and develop high-power core grain, this needs to solve a lot of problem, and wherein the heat conduction and heat radiation of high-power core grain is a technical problem that must solve.The encapsulation adopting the circuit base plate with high heat conduction and heat radiation performance to carry out high-capacity LED is an effective technological approaches.
LED package substrate can comprise FR4, cover copper aluminium base, ceramic substrate, high-thermal conductive metal base plate.The radiating requirements that the above two can not meet high power core grain because conductive coefficient is very low, and ceramic substrate due to difficult forming, be difficult to obtain large area sheet material and cost and be difficult to reduce, can not meet extensive use, the emphasis of therefore LED package substrate development at present concentrates on metal substrate.
Adopt AIN(aluminium nitride) the high power LED device thermal resistance of ceramic substrate encapsulation is lower by 54.9% than the LED component of aluminium base substrate, alumina base substrate package, 40.2%.The heat transfer efficiency of aluminium itself is close with the thermal conductivity of AIN pottery, but the high power LED device thermal resistance of AIN ceramic substrate encapsulation is lower than aluminium base substrate by 54.9%, owing to the insulating barrier on aluminium base, this insulating barrier thermal conductivity is general all at below 3W/mK, therefore, compare and the aluminium base with insulating barrier, this high heat conduction of AIN ceramic coating substrate and the substrate insulated again can improve the bottleneck of restriction great power LED development effectively, especially for multi-chip LED integration module, its light extraction efficiency and functional reliability can be improved.
The manufacture of current most of AlN ceramic forms for adopting ceramic powders sintering, and it is comparatively large that the wiring board that this mode makes has material fragility, can not be made into the wiring board product of larger area and not easily machine-shaping; In addition, because sintering temperature is higher, AlN ceramic sintering cost is realized on metallic substrates high and product yield is low.
Also has a kind of way at present for adopting Al
2o
3(aluminium oxide) ceramic substrate packaged high-power LED device, but Al
2o
3the manufacture of ceramic substrate prepares Al by anodic oxidation on metallic substrates for adopting electrolysis tank
2o
3coating is as thermal insulation layer, and cost is higher, and unstable properties, manufacturing process consumes energy and contaminated environment.
Summary of the invention
The object of the invention is to solve above-mentioned technical problem, a kind of metal base circuit board with super-high heat-conductive performance is provided, namely at the super-high heat-conductive wiring board that Metal Substrate sheet material is formed as the surface application such as aluminium, copper one deck AlN ceramic coating or AlN+DLC composite coating, be applied in the field that high power LED device or module etc. need super-high heat-conductive, while meeting electrical apparatus insulation requirement, improve the heat conduction and heat radiation ability of substrate.
Object of the present invention is achieved through the following technical solutions:
A kind of super-high heat-conductive metal base circuit board, it is characterized in that: comprise sheet metal, the top of described sheet metal is provided with the AIN ceramic coating for insulating heat-conductive plated by PVD method and the Cu coating for conducting electricity successively.
Preferably, between described AIN ceramic coating and Cu coating, also plating is provided with one deck DLC coating.
Preferably, when described sheet metal is non-aluminum metal material, between described sheet metal and AIN ceramic coating, also plate the Al coating being provided with one deck and playing a transition role.
Preferably, the thickness of described AIN ceramic coating is 30 ~ 40 microns; The thickness of described Cu coating is 30 ~ 60 microns; The thickness of described DLC coating is 2 ~ 4 microns; The thickness of described Al coating is 0.5 ~ 0.7 micron.
Present invention further teaches the preparation method of aforesaid super-high heat-conductive metal base circuit board, in turn include the following steps,
The first, sheet metal cleaning step: with ultrasonic equipment clean metal sheet material, and dry;
The second, pre-treatment step of bleeding: described sheet metal is installed in vacuum film coating chamber, and vacuum film coating chamber is pumped to 5.0 × 10
-3the vacuum degree of more than Pa;
3rd, Ion Cleaning step: the vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar to vacuum coating indoor, and keeps the technique vacuum degree of vacuum coating indoor to be 0.3-0.7Pa; Open ion source power supply and grid bias power supply; Described grid bias power supply adopts high frequency pulse power supply, and voltage is-3kV, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%, and the Ion Cleaning time is 20 minutes;
Four, AIN ceramic coating deposition step: vacuum degree is higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar to vacuum coating indoor, and flow 20sccm passes into more than 99.999% purity N simultaneously
2, flow 80sccm, and keep the technique vacuum degree of vacuum coating indoor to be 2.0 ~ 5.0Pa, open a pair mid frequency sputtering power supply with aluminium target sputter cathode, power 20kW; And open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 1.0kW; Sedimentation time 240 minutes;
Five, Cu deposition step: the vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar, flow 20sccm, and the technique vacuum degree keeping vacuum coating indoor is 2.0-5.0Pa, opens the DC sputtering power with copper target sputter cathode, power 10kW; Sedimentation time 30 ~ 60 minutes.
Or in described AIN ceramic coating deposition step, described grid bias power supply can adopt high-frequency impulse grid bias power supply, voltage 50V ~ 70V, frequency 40kHz ~ 60kHz, and duty ratio 60 ~ 99% replaces.
Preferably, in order to improve heat conductivility further, between described AIN ceramic coating deposition step and Cu deposition step, also comprise a DLC deposition step:
After described AIN ceramic coating deposition step terminates, close and comprise Ar and N
2process gas, the vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, passes into the C of purity more than 98%
2h
2etc. hydrocarbon class gas, and keep the technique vacuum degree of vacuum coating indoor at 0.4-2.0Pa;
Open ion beam power supply, voltage control at 1000-2000V, electric current 200 ~ 300mA, and simultaneously open grid bias power supply, grid bias power supply adopts radio-frequency power supply, power 0.5kW; Sedimentation time 45 ~ 55 minutes.
Or in described DLC deposition step, described grid bias power supply can adopt high-frequency impulse grid bias power supply, voltage 2000V ~ 3000V, frequency 40kHz ~ 60kHz, and duty ratio 60 ~ 99% replaces.
Preferably, when described sheet metal is non-aluminum metal, in order to obtain better conjugation, between described Ion Cleaning step and AIN ceramic coating deposition step, also comprise an Al deposition step:
The vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar, flow 20sccm, and the technique vacuum degree keeping vacuum film coating chamber is 2.0-5.0Pa, opens a pair mid frequency sputtering power supply with aluminium target sputter cathode, power 20kW; And open grid bias power supply simultaneously, adopt high-frequency impulse grid bias power supply, voltage 2500V ~ 3000V, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%; Sedimentation time 10 minutes.
Super-high heat-conductive metal base circuit boards all above all can be used as LED package substrate.
Beneficial effect of the present invention is mainly reflected in:
(1) physical gas phase deposition technology is adopted, integrated application magnetron sputtering technique and ion beam technology, depositing Al N ceramic coating and/or AlN+DLC composite coating on sheet metal, and the wiring board being configured for the application such as great power LED in this, as circuit board substrate.Due to the good insulation thermal conductivity of AlN ceramic coating and the excellent heat conductivity of DLC coating, the wiring board formed with this has super-high heat-conductive and heat dispersion and has high insulation property.
(2) with current on aluminium base by anodic oxidation prepare aluminium oxide as thermal insulation layer technology compared with, the present invention adopts AlN ceramic coating to have as insulating barrier the advantage that the capacity of heat transmission is better, insulation property are higher, and owing to all adopting PVD technology with the ion beam source depositing operation of follow-up DLC coating and attached process for copper, several technique once can complete in a kind of equipment, thus enhance productivity and product yield, and reduce production cost.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the metal base circuit board of the preferred embodiment of the present invention.
Embodiment
In recent years, various coating technology development, for industry manufacture and daily life bring many progress and facility.Rely on coating technology, product or parts can be made to obtain better surface property, thus make up some characteristic that material itself do not have.Diamond-like coating (Diamond-like Carbon), or abbreviation DLC coating is containing diamond lattic structure (sp
3key) and graphite-structure (sp
2key) metastable amorphous state material.
In coating technology, physical vapour deposition (PVD) refers to by processes such as evaporation, ionization or sputterings, produces metallic and react with reacting gas to form Compound deposition at surface of the work, is called for short PVD.PVD coating technique conventional at present is mainly divided three classes, and is vacuum evaporation coating membrane technology, vacuum sputtering coating technology and vacuum ionic bundle coating technique.Wherein, vacuum magnetron sputtering coating film technology is with the particle of the surface of solids being made during the high-energy particle bombardment surface of solids to obtain energy and surface of overflowing, be deposited on substrate.Vacuum ionic bundle coating technique refers to that the gas be introduced under vacuum conditions is ionized under the electromagnetic field acting in conjunction of ion beam; Accelerated under the electric field action of ionizable ion between ion beam and substrate, and bombard with the form of high energy particle or be deposited on substrate; The gas be introduced into, according to the needs of technique, may be Ar, H
2or C
2h
2deng, thus complete the techniques such as ion etching cleaning and ion beam depositing.But for selection and the different preparation technologies of different-energy, prepared product just can obtain different performances.
As shown in Figure 1, present invention is disclosed a kind of preferred super-high heat-conductive metal base circuit board, comprise sheet metal, the top of described sheet metal is provided with the AIN ceramic coating for insulating heat-conductive successively, there is the DLC coating of more excellent heat conducting performance, and the Cu coating for conducting electricity.Certainly, establish one deck AIN ceramic coating iff plating on sheet metal, also can reach heat-conducting effect of the present invention.
Preferably, when described sheet metal is non-aluminum metal material (such as Cu), between described sheet metal and AIN ceramic coating, also can plate the Al coating being provided with one deck and playing a transition role.Heat conduction composite coating of the present invention has multicoating, has good binding ability between each plated film.
Introduce the preparation method of metal base circuit board of the present invention below in detail.
The first, sheet metal cleaning step: clean the sheet metal such as aluminium base sheet material or copper base material with ultrasonic equipment, and dry.
The second, pre-treatment step of bleeding: described sheet metal is installed in vacuum film coating chamber, and vacuum film coating chamber is pumped to 5.0 × 10
-3the vacuum degree of more than Pa.
3rd, Ion Cleaning step: the vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar to vacuum coating indoor, and keeps the technique vacuum degree of vacuum coating indoor to be 0.3-0.7Pa; Open ion source power supply and grid bias power supply; Described grid bias power supply adopts high frequency pulse power supply, and voltage is-3kV, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%, and the Ion Cleaning time is 20 minutes.
Four, AIN ceramic coating deposition step: vacuum degree is higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar to vacuum coating indoor, and flow 20sccm passes into more than 99.999% purity N simultaneously
2, flow 80sccm, and keep the technique vacuum degree of vacuum coating indoor to be 2.0 ~ 5.0Pa, open a pair mid frequency sputtering power supply with aluminium target sputter cathode, power 20kW; And open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 1.0kW; Or described grid bias power supply can adopt high-frequency impulse grid bias power supply, voltage 50V ~ 70V, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.Sedimentation time 240 minutes; AIN ceramic coating deposition thickness 30 ~ 40 microns.
Five, DLC deposition step: after described AlN ceramic deposition step terminates, closes process gas and (comprises Ar and N
2), the vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, passes into the hydrocarbon class gas of purity more than 98%, and keeps the non-0.4-2.0Pa of technique vacuum degree of vacuum coating indoor;
Open ion beam power supply, voltage control at 1000-2000V, electric current 200 ~ 300mA, and simultaneously open grid bias power supply, grid bias power supply adopts radio-frequency power supply, power 0.5kW; Or described grid bias power supply can adopt high-frequency impulse grid bias power supply, voltage 2000V ~ 3000V, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.Sedimentation time 45 ~ 55 minutes, DLC coating deposit thickness 2 ~ 4 microns.
Six, Cu deposition step: the vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar, flow 20sccm, and the technique vacuum degree keeping vacuum coating indoor is 2.0-5.0Pa, opens the DC sputtering power with copper target sputter cathode, power 10kW; Sedimentation time 30 ~ 60 minutes, Cu coating deposit thickness 30 ~ 60 microns.
Preferably, when described sheet metal is non-aluminum metal, in order to obtain better conjugation, also comprise an Al deposition step between described Ion Cleaning step and AIN ceramic coating deposition step: be evacuated to the vacuum degree of vacuum film coating chamber higher than 5.0 × 10
-4pa, pass into more than 99.999% purity Ar, flow 20sccm, the technique vacuum degree keeping vacuum film coating chamber is 2.0-5.0Pa, opens a pair shielding power supply with aluminium target sputter cathode, power 20kW, and open grid bias power supply simultaneously, adopt high-frequency impulse grid bias power supply, voltage 2500V ~ 3000V, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%; Sedimentation time 10 minutes, Al coating deposit thickness 0.5 ~ 0.7 micron.
Certainly, when described sheet metal is aluminium, an Al deposition step is set between described Ion Cleaning step and AIN ceramic coating deposition step, also can.
The super-high heat-conductive metal base circuit board prepared by above method can be used as LED package substrate.
As following table one, the present invention adopts the super-high heat-conductive metal base circuit board of AlN+DLC composite coating and conventional aluminium base plate line plate and contains being compared as follows of DLC coated anode aluminum oxide substrate wiring board: the capacity of heat transmission obviously increases; The breakdown voltage resistant obvious lifting of wiring board.
Table one
AlN+DLC composite coating on super-high heat-conductive metal base circuit board of the present invention, can also for the manufacture of other product, as manufactured LED light source heat conduction and heat radiation device etc.It has industrial prospect widely, can be applied to the multiple occasion needing high thermal conductivity and insulation property.
Claims (4)
1. the preparation method of a super-high heat-conductive metal base circuit board, described super-high heat-conductive metal base circuit board, comprise sheet metal, the top of described sheet metal is provided with the AlN ceramic coating for insulating heat-conductive of being plated by PVD method and the Cu coating for conducting electricity successively, between described AlN ceramic coating and Cu coating, also plating is provided with one deck DLC coating, it is characterized in that: in turn include the following steps
The first, sheet metal cleaning step, with ultrasonic equipment clean metal sheet material, and dries;
The second, pre-treatment step of bleeding, is installed on described sheet metal in vacuum film coating chamber, and vacuum film coating chamber is pumped to 5.0 × 10
-3the vacuum degree of more than Pa;
3rd, Ion Cleaning step, is evacuated to the vacuum degree of vacuum film coating chamber higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar to vacuum coating indoor, and keeps the technique vacuum degree of vacuum coating indoor to be 0.3-0.7Pa; Open ion source power supply and grid bias power supply; Described grid bias power supply adopts high frequency pulse power supply, and voltage is-3kV, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%, and the Ion Cleaning time is 20 minutes;
4th, AlN ceramic deposition step, vacuum degree is higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar to vacuum coating indoor, and flow 20sccm passes into more than 99.999% purity N simultaneously
2, flow 80sccm, and keep the technique vacuum degree of vacuum coating indoor to be 2.0 ~ 5.0Pa, open shielding power supply, power 20kW; And open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 1.0kW; Sedimentation time 240 minutes;
Five, Cu deposition step, is evacuated to the vacuum degree of vacuum film coating chamber higher than 5.0 × 10
-4pa, passes into more than 99.999% purity Ar, flow 20sccm, and the technique vacuum degree keeping vacuum coating indoor is 2.0-5.0Pa, opens the DC sputtering power with copper target sputter cathode, power 10kW; Sedimentation time 30 ~ 60 minutes;
Also one is comprised between described AlN ceramic deposition step and Cu deposition step
dLCdeposition step,
After described AlN ceramic deposition step terminates, close process gas, the vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, passes into the hydrocarbon class gas of purity more than 98%, and keeps the technique vacuum degree of vacuum coating indoor to be 0.4-2.0Pa;
Open ion beam power supply, voltage control at 1000-2000V, electric current 200 ~ 300mA, and simultaneously open grid bias power supply, grid bias power supply adopts radio-frequency power supply, power 0.5kW; Sedimentation time 45 ~ 55 minutes.
2. the preparation method of super-high heat-conductive metal base circuit board according to claim 1, it is characterized in that: in described AlN ceramic deposition step, described grid bias power supply can adopt high-frequency impulse grid bias power supply, voltage-50V ~-70V, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.
3. the preparation method of super-high heat-conductive metal base circuit board according to claim 1, is characterized in that: described in
dLCin deposition step, grid bias power supply can adopt high-frequency impulse grid bias power supply, voltage-2000V ~-3000V, frequency 40kHz ~ 60kHz, and duty ratio 60 ~ 99% replaces.
4. the preparation method of super-high heat-conductive metal base circuit board according to claim 1, is characterized in that: also comprise an Al deposition step between described Ion Cleaning step and AlN ceramic deposition step,
The vacuum degree of vacuum film coating chamber is evacuated to higher than 5.0 × 10
-4pa, pass into more than 99.999% purity Ar, flow 20sccm, the technique vacuum degree keeping vacuum film coating chamber is 2.0-5.0Pa, opens shielding power supply, power 20kW, and open grid bias power supply simultaneously, adopt high-frequency impulse grid bias power supply, voltage-2500V ~-3000V, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%; Sedimentation time 10 minutes.
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Families Citing this family (10)
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| CN102917534A (en) * | 2012-10-24 | 2013-02-06 | 星弧涂层科技(苏州工业园区)有限公司 | DLC (Diamond like Carbon) thin film coating-based ceramic substrate |
| CN103895281B (en) * | 2012-12-24 | 2015-11-18 | 北京有色金属研究总院 | A kind of high heat conductive insulating laminar composite and preparation method thereof |
| CN103346242A (en) * | 2013-07-05 | 2013-10-09 | 苏州热驰光电科技有限公司 | LED device based on glass substrate and preparation method of LED device |
| US9947850B2 (en) * | 2014-04-04 | 2018-04-17 | Sharp Kabushiki Kaisha | Substrate for light emitting devices and light emitting device |
| CN104347782A (en) * | 2014-10-31 | 2015-02-11 | 华南理工大学 | High-performance insulation layer for AlSiC composite base plate |
| CN105774130B (en) * | 2014-12-25 | 2018-01-12 | 北京有色金属研究总院 | A kind of high heat conduction high-air-tightness composite and preparation method thereof |
| CN109881151A (en) * | 2019-03-25 | 2019-06-14 | 芜湖职业技术学院 | LED heat dissipation structure based on DLC film and preparation method thereof and LED structure |
| WO2021133853A1 (en) * | 2019-12-24 | 2021-07-01 | Nlight, Inc. | Corrosion resistant heatsink method, system, and apparatus |
| CN114150311A (en) * | 2020-08-17 | 2022-03-08 | 中国科学院金属研究所 | Ceramic/copper composite substrate and preparation method thereof |
| CN113715237B (en) * | 2021-09-01 | 2023-08-04 | 卡帝德(深圳)科技集团有限公司 | Production process of electromagnetic shielding material for 5G base station |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101321428A (en) * | 2007-06-06 | 2008-12-10 | 钰衡科技股份有限公司 | High cooling circuit board and preparation thereof |
| CN101887942A (en) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | Metal baseplate provided with LED and manufacturing method thereof |
| CN101894762A (en) * | 2010-06-12 | 2010-11-24 | 深圳大学 | Metal heat-conducting substrate and manufacturing method thereof |
-
2012
- 2012-06-05 CN CN201210182211.2A patent/CN102738377B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101321428A (en) * | 2007-06-06 | 2008-12-10 | 钰衡科技股份有限公司 | High cooling circuit board and preparation thereof |
| CN101887942A (en) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | Metal baseplate provided with LED and manufacturing method thereof |
| CN101894762A (en) * | 2010-06-12 | 2010-11-24 | 深圳大学 | Metal heat-conducting substrate and manufacturing method thereof |
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