CN102738377A - Superhigh heat conduction metal-based circuit board as well as preparation method and applications thereof - Google Patents
Superhigh heat conduction metal-based circuit board as well as preparation method and applications thereof Download PDFInfo
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- CN102738377A CN102738377A CN2012101822112A CN201210182211A CN102738377A CN 102738377 A CN102738377 A CN 102738377A CN 2012101822112 A CN2012101822112 A CN 2012101822112A CN 201210182211 A CN201210182211 A CN 201210182211A CN 102738377 A CN102738377 A CN 102738377A
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Abstract
The invention provides a superhigh heat conduction metal-based circuit board as well as a preparation method thereof. A layer of AIN (aluminum nitride) ceramic coating or AIN+DLC (aluminum nitride+diamond like carbon) composite coating is coated on the surface of a metal-based plate material, such as aluminum, copper so as to form a superhigh heat conduction circuit board. The superhigh heat conduction metal-based circuit board is applied to the fields which need superhigh heat conduction, such as high-power LED (light-emitting diode) devices or modules, improves the heat conduction and heat radiation capability of a base plate as well as meets the requirements of heat conduction and dissipation of electric appliance.
Description
Technical field
The present invention relates to a kind of metal base circuit board and preparation method thereof, belong to electronic technology field with super-high heat-conductive performance.
Background technology
In industry, some thermals source or light source, for example emerging LED device or module often need quick conductive and heat radiation.LED has advantages such as energy-saving and environmental protection, become the 4th generation the solid state lighting light fixture.LED develops into field of illuminating lamps from signal lamp need improve power, promptly researches and develops high-power core grain, and this need solve a lot of problems, and the heat conduction and heat radiation of wherein high-power core grain is a technical problem that must solve.The encapsulation that the circuit base plate that employing has a high heat conduction and heat radiation performance carries out high-capacity LED is an otherwise effective technique approach.
The LED base plate for packaging can comprise FR4, cover copper aluminium base, ceramic substrate, high-thermal conductive metal base plate.The above two are because the very low radiating requirements that can not satisfy high power core grain of conductive coefficient; And ceramic substrate is owing to difficult forming, be difficult to obtain large tracts of land sheet material and cost and be difficult to reduce; Can not satisfy extensive use, therefore the emphasis of LED base plate for packaging development at present concentrates on metal substrate.
Adopt the LED device low 54.9%, 40.2% of the great power LED device thermal resistance of AIN (aluminium nitride) ceramic substrate encapsulation than aluminium base substrate, alumina base substrate package.The heat transfer efficiency of aluminium itself is close with the thermal conductivity of AIN pottery; But the great power LED device thermal resistance of AIN ceramic substrate encapsulation is than aluminium base substrate low 54.9%; Owing to the insulating barrier on the aluminium base, therefore this insulating barrier thermal conductivity is generally all below 3W/mK; Compare and the aluminium base that has insulating barrier; The substrate of this high heat conduction of AIN ceramic coating substrate and insulation again can improve the bottleneck of restriction great power LED development effectively, especially for the multi-chip LED integration module, can improve its light extraction efficiency and functional reliability.
The manufacture of present most of AlN ceramic substrates forms for adopting the ceramic powders sintering, and it is bigger that the wiring board that this mode is made has a material fragility, can not be made into larger area wiring board product and be difficult for machine-shaping; In addition, because sintering temperature is higher, realize that on metal substrate AlN ceramic post sintering cost height and product yield are low.
Also has a kind of way at present for adopting Al
2O
3(aluminium oxide) ceramic substrate packaged high-power LED device, but Al
2O
3The manufacture of ceramic substrate prepares Al through anodic oxidation for adopting electrolysis tank on metal substrate
2O
3Coating is as the insulating heat-conductive layer, and cost is higher, and unstable properties, manufacturing process power consumption and contaminated environment.
Summary of the invention
The objective of the invention is to solve above-mentioned technical problem; A kind of metal base circuit board with super-high heat-conductive performance is provided; The super-high heat-conductive wiring board that promptly constitutes at surface applied one deck AlN ceramic coating such as Metal Substrate sheet material such as aluminium, copper or AlN+DLC composite coating; Being applied in great power LED device or module etc. needs the field of super-high heat-conductive, when satisfying the electrical apparatus insulation requirement, improves the heat conduction and heat radiation ability of substrate.
The object of the invention is realized through following technical scheme:
A kind of super-high heat-conductive metal base circuit board is characterized in that: comprise sheet metal, the top of said sheet metal is provided with the AIN ceramic coating that is used for insulating heat-conductive through the plating of PVD method successively, and the Cu coating that is used to conduct electricity.
Preferably, between said AIN ceramic coating and the Cu coating also plating be provided with one deck DLC coating.
Preferably, when said sheet metal is non-aluminum metallic material, also plates between said sheet metal and the AIN ceramic coating and be provided with the Al coating that one deck plays a transition role.
Preferably, the thickness of said AIN ceramic coating is 30～40 microns; The thickness of said Cu coating is 30～60 microns; The thickness of said DLC coating is 2～4 microns; The thickness of said Al coating is 0.5～0.7 micron.
The present invention has also disclosed the preparation method of aforesaid super-high heat-conductive metal base circuit board, in turn includes the following steps,
The first, the sheet metal cleaning step: with ultrasonic equipment clean metal sheet material, and oven dry;
The second, the pre-treatment step of bleeding: said sheet metal is installed in the vacuum film coating chamber, and vacuum film coating chamber is pumped to 5.0 * 10
-3The vacuum degree that Pa is above;
The 3rd, ion cleaning step: the vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10
-4Pa, to the indoor feeding 99.999% above purity Ar of vacuum coating, and the indoor technology vacuum degree of maintenance vacuum coating is 0.3-0.7Pa; Open ion source power supply and grid bias power supply; Said grid bias power supply adopts high frequency pulse power supply, and voltage is-3kV, frequency 40kHz ~ 60kHz, and duty ratio 60 ~ 99%, the ion scavenging period is 20 minutes;
The 4th, AIN ceramic coating deposition step: vacuum degree is higher than 5.0 * 10
-4Pa, to the indoor feeding 99.999% above purity Ar of vacuum coating, flow 20sccm feeds 99.999% above purity N simultaneously
2, flow 80sccm, and to keep the indoor technology vacuum degree of vacuum coating be 2.0 ~ 5.0Pa, opens a pair of intermediate frequency shielding power supply that has aluminium target sputter cathode, power 20kW; And open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 1.0kW; Sedimentation time 240 minutes;
The 5th, Cu deposition step: the vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10
-4Pa feeds 99.999% above purity Ar, flow 20sccm, and to keep the indoor technology vacuum degree of vacuum coating be 2.0-5.0Pa, unlatching has the dc sputtering power of copper target sputter cathode, power 10kW; Sedimentation time 30 ~ 60 minutes.
Perhaps, in the said AIN ceramic coating deposition step, said grid bias power supply can adopt the high-frequency impulse grid bias power supply, voltage 50V ~ 70V, and frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.
Preferably, in order further to improve heat conductivility, also comprise a DLC deposition step between said AIN ceramic coating deposition step and the Cu deposition step:
After said AIN ceramic coating deposition step finishes, close and comprise Ar and N
2Process gas, the vacuum degree of vacuum film coating chamber be evacuated to be higher than 5.0 * 10
-4Pa feeds the C of purity more than 98%
2H
2Etc. hydrocarbon type of gas, and keep the indoor technology vacuum degree of vacuum coating at 0.4-2.0Pa;
Open the ion beam power supply, voltage control is at 1000-2000V, electric current 200 ~ 300mA, and open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 0.5kW; Sedimentation time 45 ~ 55 minutes.
Perhaps, in the said DLC deposition step, said grid bias power supply can adopt the high-frequency impulse grid bias power supply, voltage 2000V ~ 3000V, and frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.
Preferably, when said sheet metal is non-aluminum metal,, also comprise an Al deposition step between said ion cleaning step and the AIN ceramic coating deposition step in order to obtain better conjugation:
The vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10
-4Pa feeds 99.999% above purity Ar, flow 20sccm, and keeping the technology vacuum degree of vacuum film coating chamber is 2.0-5.0Pa, opens a pair of intermediate frequency shielding power supply that has aluminium target sputter cathode, power 20kW; And open grid bias power supply simultaneously, adopt the high-frequency impulse grid bias power supply, voltage 2500V ~ 3000V, frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%; Sedimentation time 10 minutes.
More than all super-high heat-conductive metal base circuit boards all can be used as the LED base plate for packaging.
Beneficial effect of the present invention is mainly reflected in:
(1) adopts physical gas phase deposition technology; Integrated application magnetron sputtering technique and ion beam technology; Depositing Al N ceramic coating and/or AlN+DLC composite coating on sheet metal, and be configured for the wiring board that great power LED etc. is used as the wiring board substrate with this.Because the good insulation thermal conductivity of AlN ceramic coating and the excellent heat conductivity of DLC coating have super-high heat-conductive and heat dispersion and have high insulation property with this wiring board that constitutes.
(2) with on aluminium base, prepare the compared with techniques of aluminium oxide at present as the insulating heat-conductive layer through anodic oxidation; The present invention adopts the AlN ceramic coating to have the advantage that the capacity of heat transmission is better, insulation property are higher as insulating barrier; And because with the ion beam source depositing operation of follow-up DLC coating and attach process for copper and all adopt the PVD technology; Several kinds of technologies can once be accomplished in a kind of equipment, thereby enhance productivity and the product yield, and have reduced production cost.
Description of drawings
Fig. 1 is the sketch map of the metal base circuit board of the preferred embodiment of the present invention.
Embodiment
In recent years, various coating technologies constantly develop, for industry manufacturing and daily life are brought many progress and facility.Rely on coating technology, can make product or parts obtain better surface property, thereby remedy some characteristic that material itself is not had.Diamond-like coating (Diamond-like Carbon), or abbreviation DLC coating is to contain diamond lattic structure (sp
3Key) and graphite-structure (sp
2Key) metastable amorphous substance.
In the coating technology, physical vapour deposition (PVD) is meant through processes such as evaporation, ionization or sputters, produces metallic and is deposited on surface of the work with reacting gas reaction formation compound, is called for short PVD.PVD coating technique commonly used at present mainly is divided three classes, and is vacuum evaporation coating membrane technology, vacuum sputtering coating technology and vacuum ionic bundle coating technique.Wherein, the vacuum magnetic-control sputtering coating technique is to make during with the high-energy particle bombardment surface of solids particle of the surface of solids obtain energy and the surface of overflowing, and is deposited on the substrate.Vacuum ionic bundle coating technique is meant that the gas that under vacuum environment, is introduced into is ionized under the electromagnetic field acting in conjunction of ion beam; Ionizable ion is accelerated under the electric field action between ion beam and the substrate, and with the bombardment of the form of high energy particle or be deposited on the substrate; The gas that is introduced into possibly be Ar, H according to the needs of technology
2Or C
2H
2Deng, thereby accomplish technologies such as ion etching cleaning and ion beam depositing.But for the selection of different-energy and different preparation technologies, prepared product just can obtain different performances.
As shown in Figure 1; The present invention has disclosed a kind of preferred super-high heat-conductive metal base circuit board, comprises sheet metal, and the top of said sheet metal is provided with the AIN ceramic coating that is used for insulating heat-conductive successively; Have the more DLC coating of excellent heat conducting performance, and the Cu coating that is used to conduct electricity.Certainly, iff plates on sheet metal establishes one deck AIN ceramic coating, also can reach heat-conducting effect of the present invention.
Preferably, when said sheet metal is non-aluminum metallic material (for example Cu), also can plates between said sheet metal and the AIN ceramic coating and be provided with the Al coating that one deck plays a transition role.Heat conduction composite coating of the present invention has multicoating, and the good binding ability is arranged between each plated film.
Introduce the preparation method of metal base circuit board of the present invention below in detail.
The first, the sheet metal cleaning step: clean sheet metals such as aluminium base sheet material or copper base material with ultrasonic equipment, and oven dry.
The second, the pre-treatment step of bleeding: said sheet metal is installed in the vacuum film coating chamber, and vacuum film coating chamber is pumped to 5.0 * 10
-3The vacuum degree that Pa is above.
The 3rd, ion cleaning step: the vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10
-4Pa, to the indoor feeding 99.999% above purity Ar of vacuum coating, and the indoor technology vacuum degree of maintenance vacuum coating is 0.3-0.7Pa; Open ion source power supply and grid bias power supply; Said grid bias power supply adopts high frequency pulse power supply, and voltage is-3kV, frequency 40kHz ~ 60kHz, and duty ratio 60 ~ 99%, the ion scavenging period is 20 minutes.
The 4th, AIN ceramic coating deposition step: vacuum degree is higher than 5.0 * 10
-4Pa, to the indoor feeding 99.999% above purity Ar of vacuum coating, flow 20sccm feeds 99.999% above purity N simultaneously
2, flow 80sccm, and to keep the indoor technology vacuum degree of vacuum coating be 2.0 ~ 5.0Pa, opens a pair of intermediate frequency shielding power supply that has aluminium target sputter cathode, power 20kW; And open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 1.0kW; Perhaps, said grid bias power supply can adopt the high-frequency impulse grid bias power supply, voltage 50V ~ 70V, and frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.Sedimentation time 240 minutes; 30 ~ 40 microns of AIN ceramic coating deposit thickness.
The 5th, DLC deposition step: after said AlN ceramic coating deposition step finishes, close process gas and (comprise Ar and N
2), the vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10
-4Pa feeds the hydrocarbon type gas of purity more than 98%, and keeps not 0.4-2.0Pa of the indoor technology vacuum degree of vacuum coating;
Open the ion beam power supply, voltage control is at 1000-2000V, electric current 200 ~ 300mA, and open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 0.5kW; Perhaps said grid bias power supply can adopt the high-frequency impulse grid bias power supply, voltage 2000V ~ 3000V, and frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.Sedimentation time 45 ~ 55 minutes, 2 ~ 4 microns of DLC coating deposit thickness.
The 6th, Cu deposition step: the vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10
-4Pa feeds 99.999% above purity Ar, flow 20sccm, and to keep the indoor technology vacuum degree of vacuum coating be 2.0-5.0Pa, unlatching has the dc sputtering power of copper target sputter cathode, power 10kW; Sedimentation time 30 ~ 60 minutes, 30 ~ 60 microns of Cu coating deposit thickness.
Preferably, when said sheet metal is non-aluminum metal,, also comprise an Al deposition step between said ion cleaning step and the AIN ceramic coating deposition step: the vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10 in order to obtain better conjugation
-4Pa feeds 99.999% above purity Ar, flow 20sccm; Keeping the technology vacuum degree of vacuum film coating chamber is 2.0-5.0Pa, opens a pair of shielding power supply that has aluminium target sputter cathode, power 20kW; And open grid bias power supply simultaneously, adopt the high-frequency impulse grid bias power supply, voltage 2500V ~ 3000V; Frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%; Sedimentation time 10 minutes, 0.5 ~ 0.7 micron of Al coating deposit thickness.
Certainly, when said sheet metal is aluminium, between said ion cleaning step and the AIN ceramic coating deposition step Al deposition step is set, also can.
Super-high heat-conductive metal base circuit board through above method preparation can be used as the LED base plate for packaging.
Like following table one, the present invention adopts the super-high heat-conductive metal base circuit board and the conventional aluminium base plate line plate of AlN+DLC composite coating and contains the following of DLC coated anode aluminum oxide substrate wiring board: the capacity of heat transmission obviously increases; The breakdown voltage resistant obvious lifting of wiring board.
Table one
AlN+DLC composite coating on the super-high heat-conductive metal base circuit board of the present invention can also be used to make other product, as making led light source heat conduction and heat radiation device etc.It has the wide industrial prospect, can be applied to the multiple occasion that needs high thermal conductivity and insulation property.
Claims (10)
1. super-high heat-conductive metal base circuit board is characterized in that: comprise sheet metal, the top of said sheet metal is provided with the AIN ceramic coating that is used for insulating heat-conductive through the plating of PVD method successively, and the Cu coating that is used to conduct electricity.
2. super-high heat-conductive metal base circuit board according to claim 1 is characterized in that: also plate between said AlN ceramic coating and the Cu coating and be provided with one deck DLC coating.
3. super-high heat-conductive metal base circuit board according to claim 2 is characterized in that: when said sheet metal is non-aluminum metallic material, also plates between said sheet metal and the AlN ceramic coating and be provided with the Al coating that one deck plays a transition role.
4. super-high heat-conductive metal base circuit board according to claim 3 is characterized in that: the thickness of said AlN ceramic coating is 30～40 microns; The thickness of said Cu coating is 30～60 microns; The thickness of said DLC coating is 2～4 microns; The thickness of said Al coating is 0.5～0.7 micron.
5. preparation method like the described arbitrary super-high heat-conductive metal base circuit board of claim 1-4 is characterized in that: in turn includes the following steps,
The first, the sheet metal cleaning step, with ultrasonic equipment clean metal sheet material, and oven dry;
The second, the pre-treatment step of bleeding is installed on said sheet metal in the vacuum film coating chamber, and vacuum film coating chamber is pumped to 5.0 * 10
-3The vacuum degree that Pa is above;
The 3rd, the ion cleaning step is evacuated to the vacuum degree of vacuum film coating chamber and is higher than 5.0 * 10
-4Pa, to the indoor feeding 99.999% above purity Ar of vacuum coating, and the indoor technology vacuum degree of maintenance vacuum coating is 0.3-0.7Pa; Open ion source power supply and grid bias power supply; Said grid bias power supply adopts high frequency pulse power supply, and voltage is-3kV, frequency 40kHz ~ 60kHz, and duty ratio 60 ~ 99%, the ion scavenging period is 20 minutes;
The 4th, AIN ceramic coating deposition step, vacuum degree is higher than 5.0 * 10
-4Pa, to the indoor feeding 99.999% above purity Ar of vacuum coating, flow 20sccm feeds 99.999% above purity N simultaneously
2, flow 80sccm, and to keep the indoor technology vacuum degree of vacuum coating be 2.0 ~ 5.0Pa, opens shielding power supply, power 20kW; And open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 1.0kW; Sedimentation time 240 minutes;
The 5th, the Cu deposition step is evacuated to the vacuum degree of vacuum film coating chamber and is higher than 5.0 * 10
-4Pa feeds 99.999% above purity Ar, flow 20sccm, and to keep the indoor technology vacuum degree of vacuum coating be 2.0-5.0Pa, unlatching has the dc sputtering power of copper target sputter cathode, power 10kW; Sedimentation time 30 ~ 60 minutes.
6. the preparation method of super-high heat-conductive metal base circuit board according to claim 5; It is characterized in that: in the said AIN ceramic coating deposition step, said grid bias power supply can adopt the high-frequency impulse grid bias power supply, voltage 50V ~ 70V; Frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.
7. the preparation method of super-high heat-conductive metal base circuit board according to claim 5 is characterized in that: also comprise a DLC deposition step between said AIN ceramic coating deposition step and the Cu deposition step,
After said AIN ceramic coating deposition step finishes, close process gas, the vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10
-4Pa feed the hydrocarbon type gas of purity more than 98%, and the indoor technology vacuum degree of maintenance vacuum coating is 0.4-2.0Pa;
Open the ion beam power supply, voltage control is at 1000-2000V, electric current 200 ~ 300mA, and open grid bias power supply simultaneously, grid bias power supply adopts radio-frequency power supply, power 0.5kW; Sedimentation time 45 ~ 55 minutes.
8. the preparation method of super-high heat-conductive metal base circuit board according to claim 6 is characterized in that: said grid bias power supply can adopt the high-frequency impulse grid bias power supply, voltage 2000V ~ 3000V, and frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99% replaces.
9. the preparation method of super-high heat-conductive metal base circuit board according to claim 5 is characterized in that: also comprise an Al deposition step between said ion cleaning step and the AIN ceramic coating deposition step,
The vacuum degree of vacuum film coating chamber is evacuated to is higher than 5.0 * 10
-4Pa feeds 99.999% above purity Ar, flow 20sccm; Keeping the technology vacuum degree of vacuum film coating chamber is 2.0-5.0Pa, opens shielding power supply, power 20kW; And open grid bias power supply simultaneously, adopt the high-frequency impulse grid bias power supply, voltage 2500V ~ 3000V; Frequency 40kHz ~ 60kHz, duty ratio 60 ~ 99%; Sedimentation time 10 minutes.
10. application like the described arbitrary super-high heat-conductive metal base circuit board of claim 1-4 is characterized in that: said super-high heat-conductive metal base circuit board is as the LED base plate for packaging.
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| CN102917534A (en) * | 2012-10-24 | 2013-02-06 | 星弧涂层科技(苏州工业园区)有限公司 | DLC (Diamond like Carbon) thin film coating-based ceramic substrate |
| CN103346242A (en) * | 2013-07-05 | 2013-10-09 | 苏州热驰光电科技有限公司 | LED device based on glass substrate and preparation method of LED device |
| CN103895281A (en) * | 2012-12-24 | 2014-07-02 | 北京有色金属研究总院 | High thermal conductive insulation layered composite material and preparation method thereof |
| CN104347782A (en) * | 2014-10-31 | 2015-02-11 | 华南理工大学 | High-performance insulation layer for AlSiC composite base plate |
| CN105774130A (en) * | 2014-12-25 | 2016-07-20 | 北京有色金属研究总院 | Composite material with high thermal conductivity and air impermeability and preparing method thereof |
| CN106134297A (en) * | 2014-04-04 | 2016-11-16 | 夏普株式会社 | Light-emitting device substrate and light-emitting device |
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| CN102917534A (en) * | 2012-10-24 | 2013-02-06 | 星弧涂层科技(苏州工业园区)有限公司 | DLC (Diamond like Carbon) thin film coating-based ceramic substrate |
| CN103895281A (en) * | 2012-12-24 | 2014-07-02 | 北京有色金属研究总院 | High thermal conductive insulation layered composite material and preparation method thereof |
| CN103895281B (en) * | 2012-12-24 | 2015-11-18 | 北京有色金属研究总院 | A kind of high heat conductive insulating laminar composite and preparation method thereof |
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| CN106134297A (en) * | 2014-04-04 | 2016-11-16 | 夏普株式会社 | Light-emitting device substrate and light-emitting device |
| CN106134297B (en) * | 2014-04-04 | 2019-08-06 | 夏普株式会社 | Light emitting device substrate, light emitting device and lighting device |
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| CN109881151A (en) * | 2019-03-25 | 2019-06-14 | 芜湖职业技术学院 | LED heat dissipation structure based on DLC film and preparation method thereof and LED structure |
| WO2021133853A1 (en) * | 2019-12-24 | 2021-07-01 | Nlight, Inc. | Corrosion resistant heatsink method, system, and apparatus |
| CN114150311A (en) * | 2020-08-17 | 2022-03-08 | 中国科学院金属研究所 | Ceramic/copper composite substrate and preparation method thereof |
| CN113715237A (en) * | 2021-09-01 | 2021-11-30 | 深圳市动盈先进材料有限公司 | Production process of electromagnetic shielding material based on 5G base station |
| CN113715237B (en) * | 2021-09-01 | 2023-08-04 | 卡帝德(深圳)科技集团有限公司 | Production process of electromagnetic shielding material for 5G base station |
| CN117303303A (en) * | 2023-10-27 | 2023-12-29 | 北京六知科技有限公司 | MEMS semiconductor chip and preparation method thereof |
| CN117303303B (en) * | 2023-10-27 | 2024-08-09 | 北京六知科技有限公司 | MEMS semiconductor chip and preparation method thereof |
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