CN102917534A - DLC (Diamond like Carbon) thin film coating-based ceramic substrate - Google Patents
DLC (Diamond like Carbon) thin film coating-based ceramic substrate Download PDFInfo
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- CN102917534A CN102917534A CN2012104095073A CN201210409507A CN102917534A CN 102917534 A CN102917534 A CN 102917534A CN 2012104095073 A CN2012104095073 A CN 2012104095073A CN 201210409507 A CN201210409507 A CN 201210409507A CN 102917534 A CN102917534 A CN 102917534A
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- ceramic substrate
- dlc
- film coating
- copper foil
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Abstract
The invention provides a DLC (Diamond like Carbon) thin film coating-based ceramic substrate. A DLC coating with excellent heat conductance is additionally arranged between a ceramic substrate and a copper foil; and according to the heat conductance performance being more than 800W/mK of the DLC coating, heat generated by a heating component on the ceramic substrate can be quickly spread in a line plane of the substrate and is conducted out through the self heat conductance performance of the ceramic substrate to achieve a favorable heat dissipation effect, so that the comprehensive heat conductance performance of a circuit board is greatly improved. The DLC thin film coating-based ceramic substrate does not contain high polymer materials, so that the flame resistance and the ageing resistance are excellent. Compared with the conventional ceramic substrates, the DLC thin film coating-based ceramic substrate has the excellent comprehensive heat conductance performance, and relatively high breakdown voltage resistance and is particularly suitable for the high-power devices, and the current carrying capability of the copper foil with a same section can be relatively high.
Description
Technical field
The present invention relates to a kind of ceramic substrate based on the DLC film coating, belong to electronic technology field.
Background technology
High-power wiring board need to have good heat conduction and heat radiation ability, and traditional FR4 base circuit board can not satisfy such requirement, and currently used ceramic substrate can be dealt with problems to a certain extent.Ceramic substrate refers to that Copper Foil at high temperature is bonded directly to aluminium oxide (AL
2Q
3) or the lip-deep special process plate of aluminium nitride (ALN) ceramic substrate.Made ultra-thin composite base plate has the good electric insulation property, high thermal conduction characteristic, and excellent solderability and high-adhesion, and can as pcb board, can etch various figures, have very large current capacity.Therefore, ceramic substrate has become the basic material of high-power electric and electronic circuit structure technology and interconnection technique.
But common Al in the market
2O
3Ceramic substrate or ALN ceramic substrate demonstrate its deficiency gradually in real use procedure: the heat conduction and heat radiation ability is subject to the restriction of material itself, makes its comprehensive heat conduction and heat radiation ability can not get better lifting.Al
2O
3The conductive coefficient of ceramic substrate and ALN ceramic substrate is usually in tens W/mK～200 W/mK scopes, because one of capacity of heat transmission characteristics of ceramic substrate are isotropism, that is to say substrate vertically and on the substrate circuit laterally have an identical heat conductivility, so the comprehensive heat conduction and heat radiation ability of above-mentioned ceramic substrate can not obtain fine performance.
Summary of the invention
The object of the invention is to solve above-mentioned technical problem, a kind of ceramic substrate based on the DLC film coating is provided, mainly be by between ceramic substrate and Copper Foil, increasing the splendid DLC coating (diamond-like coating) of one deck capacity of heat transmission, utilize the capacity of heat transmission characteristic of the W/mK more than 800 that this DLC coating has, so that the heat that produces of heating element rapidly diffusion in the base plate line plane on the ceramic substrate, and utilize ceramic substrate self capacity of heat transmission that heat is derived, reach the effect of good heat radiating, thereby improve greatly the comprehensive capacity of heat transmission of wiring board.
Purpose of the present invention is achieved through the following technical solutions:
Ceramic substrate based on the DLC film coating comprises ceramic substrate, and is deposited on successively on the described ceramic base plate surface by the DLC composite coating that is used for insulating heat-conductive of PVD technology preparation and the Copper Foil that is used for conduction.
Further, between described DLC composite coating and described Copper Foil, also be provided with intermediate metal.Described intermediate metal is Ti coating or Cr coating or Ni coating.
Further, the described DLC composite coating Si coating that comprises the DLC coating and play a transition role.
Further, described PVD technology prepares magnetically controlled sputter method, ion beam or thermal evaporation method.
Further, the thickness of described Si coating is 250nm～300nm, and the thickness of described DLC coating is 2.0um～2.5um, and the thickness of described intermediate metal is 0.5um～1.5um, and the thickness of described Copper Foil is 30um～70um.
The present invention is based on the preparation method of the ceramic substrate of DLC film coating, comprise the DLC deposition step, it in turn includes the following steps:
1. open the ion beam power supply, introduce high-purity C to vacuum film coating chamber
2H
2Gas;
2. the vacuum degree 3.0～5.0 * 10 that keeps vacuum film coating chamber in the technical process
-1Pa;
3. apply direct voltage 1600V～2000V, DC power supply 150mA～220mA at ion beam; Apply radio frequency voltage at ceramic substrate, its power is 150W～250W, the beginning plated film;
4. the DLC coating deposits duration 120～150min, and obtaining thickness is the DLC coating of 2.0um～2.5um.
Beneficial effect of the present invention is mainly reflected in:
⒈ ceramic base plate surface thermal insulation layer is mainly ceramic substrate itself and DLC coating, not pbz polymer material, fire resistance and ageing resistace excellence.
⒉ and traditional ceramic substrate, be that Copper Foil at high temperature is bonded directly to aluminium oxide or the lip-deep ceramic substrate of aluminium nitride ceramic substrate is compared, the present invention is based on the comprehensive heat conductivility excellence of the ceramic substrate of DLC film coating, breakdown voltage resistant higher, the Copper Foil of same cross-sectional has higher current capacity, is particularly useful for the application of high power device.
Description of drawings
Fig. 1 is the ceramic substrate structure schematic diagram that the present invention is based on the DLC film coating.
Wherein: 1, ceramic substrate; 2, DLC composite coating; 3, intermediate metal; 4, Copper Foil.
Embodiment
Diamond-like coating (Diamond-like Carbon), or abbreviation DLC coating is to contain diamond lattic structure (sp
3Key) and graphite-structure (sp
2Key) metastable amorphous substance.The DLC coating is because himself characteristic has many excellent properties, such as high rigidity, high-wearing feature, stable chemical performance, high luminescence generated by light rate and high electroluminescence rate and excellent thermal transition efficient and heat conductivility etc.
In the coating technology, physical vapour deposition (PVD) refers to by processes such as evaporation, ionization or sputters, produces metallic and forms Compound deposition at surface of the work with the reacting gas reaction, is called for short PVD.PVD coating technique commonly used mainly is divided three classes at present, is vacuum evaporation coating membrane technology, vacuum sputtering coating technology and vacuum ionic bundle coating technique.Wherein, the vacuum magnetron sputtering coating film technology is to make during with the high-energy particle bombardment surface of solids particle of the surface of solids obtain energy and the surface of overflowing, and is deposited on the substrate.Vacuum ionic bundle coating technique refers to that the gas that is introduced into is ionized under the electromagnetic field acting in conjunction of ion beam under vacuum environment; Ionizable ion is accelerated under the electric field action between ion beam and the substrate, and with the bombardment of the form of high energy particle or be deposited on the substrate; The gas that is introduced into may be Ar, H according to the needs of technique
2Or C
2H
2Deng, thereby finish the techniques such as ion etching cleaning and ion beam depositing.But for the selection of different-energy and different preparation technologies, prepared product just can obtain different performances.
As shown in Figure 1, the present invention has disclosed a kind of preferably based on the ceramic substrate of DLC film coating, comprise ceramic substrate 1, and ceramic substrate 1 upper surface by the preparation of PVD technology the DLC composite coating 2 that is used for insulating heat-conductive and be attached to successively intermediate metal 3 and the Copper Foil 4 on described DLC composite coating 2 surfaces.DLC composite coating 2 comprises the Si coating that plays a transition role and DLC coating (on the picture for illustrating) from top to bottom successively.
The below introduces the preparation method of metal base circuit board of the present invention in detail:
Step 1, the ceramic substrate cleaning step in turn includes the following steps:
(1) with solvent-borne type cleansing medium cleaning ceramic substrate under ultrasonic environment, again ceramic substrate is put into the plated film vacuum chamber after the oven dry, be evacuated to vacuum degree 1 * 10
-3Under Pa, heating-up temperature to the 150 ℃ condition;
(2) ceramic substrate of step (1) carried out Ion Cleaning, open the ion beam power supply, introduce high-purity Ar gas to vacuum film coating chamber, keep the vacuum degree 1.2～2.0 * 10 of vacuum film coating chamber
-1Pa, the direct voltage that is applied on the ion beam is 1200V～1800V, DC power supply 120mA～200mA, and the bias voltage that is applied on the ceramic substrate is that radio frequency voltage, its power are 50W～250W, and the Ion Cleaning duration is 20～30min.
Step 2, DLC composite coating deposition step comprises Si deposition step and DLC deposition step successively, wherein:
Si deposition step: open the magnetron sputtering power supply, introduce high-purity Ar gas to vacuum film coating chamber, vacuum degree 1.2～the 3.0Pa that keeps vacuum film coating chamber, the power supply that is applied on the magnetic control sputtering cathode is that DC power supply, its power are 2～3kW, the bias voltage that is applied on the ceramic substrate is that radio frequency voltage, its power are 150W～250W, Si coating deposition duration 10～15min, the Si coating layer thickness that obtains is 250nm～300nm;
The DLC deposition step, it in turn includes the following steps:
1. open the ion beam power supply, introduce high-purity C to vacuum film coating chamber
2H
2Gas;
2. the vacuum degree 3.0～5.0 * 10 that keeps vacuum film coating chamber in the technical process
-1Pa;
3. apply direct voltage 1600V～2000V, DC power supply 150mA～220mA at ion beam; Apply radio frequency voltage at ceramic substrate, its power is 150W～250W, the beginning plated film;
4. the DLC coating deposits duration 120～150min, and obtaining thickness is the DLC coating of 2.0um～2.5um.
Step 3, the metal transfer deposition step adopts magnetron sputtering technique or thermal evaporation techniques or electron beam technology, deposits the excessive coating 3 of metal of 0.5um～1.5um at the DLC composite coating, and described intermediate metal 3 is Ti coating or Cr coating or Ni coating.
Step 4, the Copper Foil deposition step, adopting magnetron sputtering technique or thermal evaporation techniques or electron beam technology deposit thickness on described intermediate metal 3 is the Copper Foil of 30um～70um.
Because step 3 and four metal level deposition adopts prior art, therefore repeats no more.
In the said method, except between ceramic substrate and DLC coating, being provided with the Si coating that plays a transition role, also can between DLC coating and intermediate metal, be provided with again a Si coating that plays a transition role, then deposit Copper Foil.Above-mentioned Si coating Main Function is the adhesion that improves between its adjacent two layers, because the Si coating of transitional function is as thin as a wafer, only is nanoscale, its on the performance of ceramic substrate without impact.
As shown in table 1, be the ceramic substrate that the present invention is based on the DLC film coating and performance comparing data based on aluminium base printed substrate and the common ALN ceramic substrate of DLC film coating, its heat conduction and heat radiation performance of the lower expression of junction temperature is better, breakdown voltage resistant this substrate of higher expression more is applicable to adopt the LED illumination of non-insulating power supply, high-power IGBT device.The present invention is based on as can be seen from the table the excellent combination property of the ceramic substrate of DLC film coating, have preferably heat conductivility.
Table 1
| Performance | The ALN ceramic aluminum substrate | Aluminium base based on the DLC film | Ceramic substrate based on the DLC film |
| Breakdown voltage resistant | Greater than 5000V | About 2500V | Greater than 5000V |
| The identical LED wiring board same position junction temperature that relates to | 98 | 72 | 76 |
The above person of thought, only for the present invention's preferred embodiment, when the scope that can not limit with this invention process, the simple equivalence of namely generally being done according to the present patent application claim and invention description content changes and modifies, and all still belongs in the scope that patent of the present invention contains.
Claims (8)
1. based on the ceramic substrate of DLC film coating, it is characterized in that: comprise ceramic substrate (1), and be deposited on successively on described ceramic substrate (1) surface by the DLC composite coating (2) that is used for insulating heat-conductive of PVD technology preparation and the Copper Foil (4) that is used for conduction.
2. the ceramic substrate based on the DLC film coating according to claim 1 is characterized in that: also be provided with intermediate metal (3) between described DLC composite coating (2) and described Copper Foil (4).
3. the ceramic substrate based on the DLC film coating according to claim 2 is characterized in that: described intermediate metal (3) is Ti coating or Cr coating or Ni coating.
4. the ceramic substrate based on the DLC film coating according to claim 3 is characterized in that: the Si coating that described DLC composite coating (2) comprises the DLC coating and plays a transition role.
5. the ceramic substrate based on the DLC film coating according to claim 4 is characterized in that: described PVD technology preparation comprises magnetically controlled sputter method, ion beam or thermal evaporation method.
6. the ceramic substrate based on the DLC film coating according to claim 5, it is characterized in that: the thickness of described Si coating is 250nm～300nm, the thickness of described DLC coating is 2.0um～2.5um, the thickness of described intermediate metal (3) is 0.5um～1.5um, and the thickness of described Copper Foil (4) is 30um～70um.
7. preparation method based on the ceramic substrate of DLC film coating is characterized in that:
Step 1, the ceramic substrate cleaning step in turn includes the following steps:
(1) with solvent-borne type cleansing medium cleaning ceramic substrate under ultrasonic environment, again ceramic substrate is put into the plated film vacuum chamber after the oven dry, be evacuated to vacuum degree 1 * 10
-3Pa, be heated under 150 ℃ of conditions of temperature;
(2) ceramic substrate of step (1) carried out Ion Cleaning, open the ion beam power supply, introduce high-purity Ar gas to vacuum film coating chamber, keep the vacuum degree 1.2～2.0 * 10 of vacuum film coating chamber
-1Pa, the direct voltage that is applied on the ion beam is 1200V～1800V, DC power supply 120mA～200mA, and the bias voltage that is applied on the ceramic substrate is that radio frequency voltage, its power are 50W～250W, and the Ion Cleaning duration is 20～30min;
Step 2, DLC composite coating deposition step comprises Si deposition step and DLC deposition step successively, wherein:
Si deposition step: open the magnetron sputtering power supply, introduce high-purity Ar gas to vacuum film coating chamber, vacuum degree 1.2～the 3.0Pa that keeps vacuum film coating chamber, the power supply that is applied on the magnetic control sputtering cathode is that DC power supply, its power are 2～3kW, the bias voltage that is applied on the ceramic substrate is that radio frequency voltage, its power are 150W～250W, Si coating deposition duration 10～15min, the Si coating layer thickness that obtains is 250nm～300nm;
The DLC deposition step, it in turn includes the following steps:
1. open the ion beam power supply, introduce high-purity C to vacuum film coating chamber
2H
2Gas;
2. the vacuum degree 3.0～5.0 * 10 that keeps vacuum film coating chamber in the technical process
-1Pa;
3. apply direct voltage 1600V～2000V, DC power supply 150mA～220mA at ion beam; Apply radio frequency voltage at ceramic substrate, its power is 150W～250W, the beginning plated film;
4. the DLC coating deposits duration 120～150min, and obtaining thickness is the DLC coating of 2.0um～2.5um;
Step 3, the Copper Foil deposition step adopts magnetron sputtering technique or thermal evaporation techniques or electron beam technology deposition Copper Foil.
8. preparation method according to claim 7, it is characterized in that: between step 2 and step 3, also comprise the metal transfer deposition step, adopt magnetron sputtering technique or thermal evaporation techniques or electron beam technology, the excessive coating of plated metal on the DLC composite coating, described intermediate metal are Ti coating or Cr coating or Ni coating.
Priority Applications (1)
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|---|---|---|---|
| CN2012104095073A CN102917534A (en) | 2012-10-24 | 2012-10-24 | DLC (Diamond like Carbon) thin film coating-based ceramic substrate |
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| CN2012104095073A CN102917534A (en) | 2012-10-24 | 2012-10-24 | DLC (Diamond like Carbon) thin film coating-based ceramic substrate |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103228101A (en) * | 2013-03-14 | 2013-07-31 | 苏州热驰光电科技有限公司 | FR4 circuit board enhanced by high-thermal-conductive nano DLC (diamond-like carbon) coating |
| CN103331968A (en) * | 2013-07-04 | 2013-10-02 | 苏州生益科技有限公司 | High thermal conductive fiberglass cloth base laminate |
| CN104113942A (en) * | 2013-04-19 | 2014-10-22 | 中环股份有限公司 | Electric heating assembly |
| CN105304504A (en) * | 2015-09-21 | 2016-02-03 | 杰群电子科技（东莞）有限公司 | Manufacturing method for substrate used for semiconductor device |
| CN108155162A (en) * | 2018-01-03 | 2018-06-12 | 梧州三和新材料科技有限公司 | A kind of three-dimensional high heat conduction highly exothermic of no glue laminating and preparation method thereof |
| CN108701663A (en) * | 2016-02-26 | 2018-10-23 | 国立研究开发法人产业技术综合研究所 | Heat-radiating substrate |
| CN112420638A (en) * | 2019-08-22 | 2021-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Diamond film copper-clad heat sink and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103228101A (en) * | 2013-03-14 | 2013-07-31 | 苏州热驰光电科技有限公司 | FR4 circuit board enhanced by high-thermal-conductive nano DLC (diamond-like carbon) coating |
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| CN112420638A (en) * | 2019-08-22 | 2021-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Diamond film copper-clad heat sink and preparation method thereof |
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Address after: 215022 No. 81, new road, Suzhou Industrial Park, Jiangsu, China Applicant after: New technology of star arc coating material (Suzhou) Limited by Share Ltd Address before: 215022 No. 81, new road, Suzhou Industrial Park, Jiangsu, China Applicant before: Stararc Coating Technologies (Suzhou) Co., Ltd. |
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Application publication date: 20130206 |