CN112420638A - Diamond film copper-clad heat sink and preparation method thereof - Google Patents
Diamond film copper-clad heat sink and preparation method thereof Download PDFInfo
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- CN112420638A CN112420638A CN201910779060.0A CN201910779060A CN112420638A CN 112420638 A CN112420638 A CN 112420638A CN 201910779060 A CN201910779060 A CN 201910779060A CN 112420638 A CN112420638 A CN 112420638A
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- heat sink
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 63
- 239000010432 diamond Substances 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- 239000010949 copper Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000007781 pre-processing Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 86
- 239000011241 protective layer Substances 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 17
- 238000001035 drying Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000006731 degradation reaction Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
Abstract
The invention discloses a diamond film copper clad heat sink and a preparation method thereof. The preparation method comprises the following steps: providing a heat sink substrate and preprocessing the heat sink substrate; forming a barrier layer on the heat sink substrate; forming a bonding layer on the barrier layer; and forming a diamond heat conduction layer on the bonding layer. The heat sink includes: a heat sink substrate; a barrier layer disposed on the heat sink substrate; a bonding layer disposed on the barrier layer; and the diamond heat conduction layer is arranged on the bonding layer. The heat conducting layer of diamond with high compactness, high bonding and high heat conductivity is formed on the heat sink substrate, so that the heat conducting capability of the heat sink substrate is improved, the thermal expansion of the heat sink substrate can be restrained, the failure of the heat sink substrate after the heat sink substrate is welded with a chip can not be caused, and the practical application performance of the diamond film copper clad as a heat sink material is improved by forming the barrier layer and the bonding layer. The method has simple process and required equipment, is easy to operate, does not generate harmful substances, and can be used for industrial production.
Description
Technical Field
The invention belongs to the technical field of heat sinks for electronic device packaging, and particularly relates to a diamond film copper-clad base heat sink and a preparation method thereof.
Background
In a high-power electronic device, the product volume is increasingly reduced, so that the power density is higher, and the requirement on the heat dissipation capacity of a packaging material is increasingly high in order to prevent the electronic device from being damaged and losing efficacy due to overhigh temperature of the product. At present, a packaging shell of a high-power electronic device usually adopts a heat sink material, mainly a high-thermal-conductivity heat sink material such as tungsten-copper alloy, molybdenum-copper alloy, kovar alloy and the like, but a simple traditional heat sink material is difficult to meet the requirement of efficient heat dissipation, so that a new heat sink material needs to be developed to meet the requirement.
Disclosure of Invention
(I) technical problems to be solved by the invention
The technical problem to be solved by the invention is as follows: how to improve the thermal conductivity of the heat sink material.
(II) the technical scheme adopted by the invention
In order to achieve the purpose, the invention adopts the following technical scheme:
a preparation method of a diamond film copper clad base heat sink comprises the following steps:
providing a heat sink substrate and preprocessing the heat sink substrate;
forming a barrier layer on the heat sink substrate;
forming a bonding layer on the barrier layer;
and forming a diamond heat conduction layer on the bonding layer.
Preferably, the specific method for pretreating the heat sink substrate comprises the following steps:
cleaning and drying the heat sink substrate;
and carrying out plasma cleaning treatment on the heat sink substrate after cleaning and drying treatment.
Preferably, the preparation method further comprises:
and manufacturing and forming a protective layer on the diamond heat conduction layer.
Preferably, after the protective layer is formed, the preparation method further includes:
annealing the prepared diamond film copper-clad heat sink, wherein the degradation temperature is 400-600 ℃, and the annealing time is 2-6 h.
Preferably, a physical vapor deposition process is used to form a diamond thermal conductive layer on the bonding layer.
Preferably, the heat sink substrate is made of a copper-based heat sink substrate, the barrier layer is made of ruthenium or platinum or molybdenum, and the bonding layer is made of nickel or chromium.
Preferably, the thickness of the barrier layer is 50nm to 150nm, and/or the thickness of the bonding layer is 0.1 μm to 1 μm, and/or the thickness of the diamond heat conduction layer is 5 μm to 15 μm.
Preferably, the material of the protective layer is gold, and the thickness of the protective layer is 1-3 μm.
The invention also provides a diamond film copper clad base heat sink, which comprises:
a heat sink substrate;
a barrier layer disposed on the heat sink substrate;
a bonding layer disposed on the barrier layer;
and the diamond heat conduction layer is arranged on the bonding layer.
Preferably, the diamond film copper clad base heat sink further comprises:
and the protective layer is arranged on the diamond heat conduction layer.
(III) advantageous effects
The diamond film copper clad base heat sink and the preparation method thereof can form a diamond heat conduction layer with high compactness, high combination and high heat conduction on the heat sink substrate, improve the heat conduction capability of the heat sink substrate, simultaneously can restrain the thermal expansion of the heat sink substrate, can not cause failure after being welded with a chip, and improve the practical application performance of the diamond film copper clad as the heat sink material by forming the barrier layer and the combination layer. The method has simple process and required equipment, is easy to operate, does not generate harmful substances, and can be used for industrial production.
Drawings
Fig. 1 is a flow chart of a method for manufacturing a diamond film copper clad heat sink according to a first embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a diamond film copper clad heat sink according to a second embodiment of the present invention;
fig. 3 is another schematic cross-sectional view of a diamond film copper clad heat sink according to a second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example one
The invention aims to provide a preparation method of a diamond film copper-clad heat sink, which is used for forming a DLC coating with high compactness, high bonding and high heat conductivity on the surface of a copper substrate heat sink flange so as to produce a novel high-performance heat sink material. Specifically, as shown in fig. 1 and fig. 2, the method for manufacturing a diamond film copper-clad heat sink according to the first embodiment includes the following steps:
step S10: a heatsink substrate 10 is provided and the heatsink substrate 10 is pre-processed.
Specifically, the heat sink substrate 10 is preferably a copper-based heat sink substrate, and the step of preprocessing the heat sink substrate 10 includes performing cleaning and drying processing on the heat sink substrate 10 and performing plasma cleaning processing on the heat sink substrate 10 after the cleaning and drying processing.
The specific steps of cleaning and drying the heat sink substrate 10 are as follows: firstly, placing a heat sink substrate 10 in an acetone solution, cleaning for 0.5h by ultrasonic oscillation, cleaning to remove hydrocarbons on the surface, then placing the heat sink substrate 10 in deionized water, cleaning for 0.5h by ultrasonic oscillation, taking out, and placing the copper-based heat sink substrate in an oven for drying.
The specific steps of performing plasma cleaning treatment on the heat sink substrate 10 after cleaning and drying treatment are as follows:
putting the heat sink substrate 10 after cleaning and drying treatment into a coating vacuum chamber of physical vapor deposition equipment, and vacuumizing the coating vacuum chamber to be lower than 10 DEG-3Pa, turning on the ion beam power supply, introducing high-purity Ar gas or mixed gas into the vacuum coating chamber, and maintaining the vacuum degree of the vacuum coating chamber at 1.2 × 10-1～2.0×10-1Pa, the direct current voltage applied on the ion beam is 1200V-1800V, the direct current power supply is 120 mA-200 mA, the bias voltage applied on the ceramic substrate is radio frequency RF voltage, the power is 50W-250W, and the ion cleaning time is 5-15 min. The heat sink substrate 10 is fully plasma-cleaned, impurities on the surface of the base material are removed, metal is favorably deposited on the surface of the base material, the film coating efficiency is increased, and the film coating quality is improved.
Step S20: a barrier layer 20 is formed on the heatsink substrate 10.
Specifically, under appropriate parameters, for example, the power is controlled to be 700W-1500W, and the heating temperature is controlled to be 200 ℃ to 500 ℃. A barrier layer 20 is deposited on the heatsink substrate 10. Wherein the material of the barrier layer 20 is ruthenium or platinum or molybdenum, and the deposition thickness of the barrier layer 20 is 50 nm-150 nm. The barrier layer 20 can prevent the copper-based heat sink substrate from diffusing to the welding layer during use, so that the welding quality is influenced, and the failure is caused.
Step S30: a bonding layer 30 is formed on the barrier layer 20.
Specifically, under proper parameters, the power is controlled to be 400W-900W, and the heating temperature is controlled to be 80-300 DEG C
A bonding layer 30 is formed on the barrier layer 20. Wherein the material of the bonding layer 30 is nickel or chromium, and the thickness of the bonding layer 30 is 0.1-1 μm. The bonding layer 30 can improve the bonding force between the heat sink substrate 10 and the DLC coating to be subsequently fabricated, and reduce the influence of the difference in thermal expansion coefficient.
Step S40: a diamond heat conductive layer 40 is formed on the bonding layer 30.
Specifically, a physical vapor deposition process is used to form a diamond heat conducting layer 40 on the bonding layer 30. The heat sink substrate 10 with the bonding layer 30 formed thereon was placed in a vacuum chamber of a PVD apparatus, and high purity C was introduced into the vacuum chamber2H2Gas, and turning on the ion beam; applying DC voltage of 2000-2600V and DC power supply of 150-220 mA; applying radio frequency RF voltage with the power of 300-350W on the copper substrate; the deposition time of the diamond heat conduction layer 40 is 200-250 min, and the diamond heat conduction layer with the thickness of 5-15 mu m is obtained. The diamond heat conduction layer is manufactured, so that the heat conduction capability of the heat sink flange can be improved, and meanwhile, the thermal expansion of the heat sink substrate 10 is restrained, and the failure can not be caused after the heat sink substrate is welded with a chip.
Further, the preparation method also comprises the following steps:
step S50: and manufacturing and forming a protective layer 50 on the diamond heat conduction layer 40.
Specifically, the protective layer 50 is deposited on the diamond heat conductive layer 40 under appropriate parameters. The material of the protective layer 50 is preferably gold, the thickness of the protective layer 50 is preferably 1 μm to 3 μm, and the protective layer 50 has the functions of oxidation resistance and a welding layer, resists corrosion in a severe environment during use, and is also prepared for welding a patch.
Further, the preparation method also comprises the following steps:
step S60: and (4) annealing the diamond film copper-clad heat sink prepared in the step (S50), wherein the degradation temperature is 400-600 ℃, and the annealing time is 2-6 h. Through annealing treatment, diffusion among the coatings is promoted, and the coatings are crystallized in a columnar mode, so that higher binding force is kept.
It should be noted that the method described in the above embodiment can be used to make each coating layer on not only a single surface of the heat sink substrate 10, but also on two surfaces of the heat sink substrate 10, as shown in fig. 3, so as to further improve the heat conductivity of the heat sink substrate 10.
The preparation method of the diamond film copper-clad base heat sink provided by the embodiment of the invention can form the diamond heat conduction layer with high compactness, high combination and high heat conduction on the heat sink substrate, and improves the practical application performance of the diamond film copper-clad base heat sink material by forming the barrier layer and the combination layer. The method has simple process and required equipment, is easy to operate, does not generate harmful substances, and can be used for industrial production.
Example two
As shown in fig. 1, the diamond film copper clad heat sink according to the second embodiment of the present invention includes: the heat sink comprises a heat sink substrate 10, a barrier layer 20, a bonding layer 30 and a diamond heat conduction layer 40, wherein the barrier layer 20 is arranged on the heat sink substrate 10, the bonding layer 30 is arranged on the barrier layer 20, and the diamond heat conduction layer 40 is arranged on the bonding layer. Wherein the material of the barrier layer 20 is ruthenium, and the deposition thickness of the barrier layer 20 is 50nm to 150 nm. The barrier layer 20 can prevent the copper-based heat sink substrate from diffusing to the welding layer during use, so that the welding quality is influenced, and the failure is caused. The material of the bonding layer 30 is preferably nickel, and the thickness of the bonding layer 30 is 0.1 μm to 1 μm. The bonding layer 30 can improve the bonding force between the heat sink substrate 10 and the DLC coating to be subsequently fabricated, and reduce the influence of the difference in thermal expansion coefficient. The thickness of the diamond heat conduction layer is 5-15 microns, so that the heat conduction capability of the heat sink flange is improved, and meanwhile, the thermal expansion of the heat sink substrate 10 is restrained, and the failure cannot be caused after the heat sink substrate is welded with a chip.
Further, the diamond film copper-clad heat sink further comprises a protective layer 50, the material of the protective layer 50 is preferably gold, the thickness of the protective layer 50 is preferably 1-3 μm, and the protective layer 50 has the functions of oxidation resistance and a welding layer, resists corrosion in a severe environment in the using process and is also prepared for welding patches.
According to the diamond film copper-clad heat sink provided by the embodiment of the invention, the diamond heat conduction layer with high compactness, high bonding and high heat conduction is formed, so that the heat conduction capability of the heat sink substrate is improved, and meanwhile, the thermal expansion of the heat sink substrate can be restrained, so that the failure can not be caused after the heat sink substrate is welded with a chip.
It should be noted that the heat sink substrate 10 of the diamond film copper clad base heat sink may have the above-mentioned coatings formed on both surfaces thereof, as shown in fig. 3, so that the heat conductivity of the heat sink substrate 10 may be further improved.
Although the illustrative embodiments of the present invention have been described above to enable those skilled in the art to understand the present invention, the present invention is not limited to the scope of the embodiments, and it is apparent to those skilled in the art that all the inventive concepts using the present invention are protected as long as they can be changed within the spirit and scope of the present invention as defined and defined by the appended claims.
Claims (10)
1. A preparation method of a diamond film copper-clad heat sink is characterized by comprising the following steps:
providing a heat sink substrate and preprocessing the heat sink substrate;
forming a barrier layer on the heat sink substrate;
forming a bonding layer on the barrier layer;
and forming a diamond heat conduction layer on the bonding layer.
2. The preparation method of the diamond film copper clad base heat sink according to claim 1, wherein the specific method for preprocessing the heat sink substrate comprises the following steps:
cleaning and drying the heat sink substrate;
and carrying out plasma cleaning treatment on the heat sink substrate after cleaning and drying treatment.
3. The method for preparing the diamond film copper clad base heat sink according to claim 1, wherein the method further comprises the following steps:
and manufacturing and forming a protective layer on the diamond heat conduction layer.
4. The method for preparing the diamond film copper clad base heat sink according to claim 3, wherein after the protective layer is formed, the method further comprises:
annealing the prepared diamond film copper-clad heat sink, wherein the degradation temperature is 400-600 ℃, and the annealing time is 2-6 h.
5. The method for preparing the diamond film copper-clad base heat sink according to claim 1, wherein a diamond heat conduction layer is formed on the bonding layer by adopting a physical vapor deposition process.
6. The method for preparing the diamond film copper-clad heat sink according to claim 1, wherein the heat sink substrate is made of a copper-based heat sink substrate, the barrier layer is made of ruthenium, platinum or molybdenum, and the bonding layer is made of nickel or chromium.
7. The method for preparing the diamond film copper-clad base heat sink according to claim 1 or 6, wherein the thickness of the barrier layer is 50 nm-150 nm, and/or the thickness of the bonding layer is 0.1 μm-1 μm, and/or the thickness of the diamond heat conduction layer is 5 μm-15 μm.
8. The method for preparing the diamond film copper-clad base heat sink according to claim 3, wherein the material of the protective layer is gold, and the thickness of the protective layer is 1-3 μm.
9. A diamond film copper clad base heat sink is characterized by comprising:
a heat sink substrate;
a barrier layer disposed on the heat sink substrate;
a bonding layer disposed on the barrier layer;
and the diamond heat conduction layer is arranged on the bonding layer.
10. The diamond film copper clad base heat sink according to claim 9, wherein said diamond film copper clad base heat sink further comprises:
and the protective layer is arranged on the diamond heat conduction layer.
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| CN201910779060.0A CN112420638A (en) | 2019-08-22 | 2019-08-22 | Diamond film copper-clad heat sink and preparation method thereof |
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| CN201910779060.0A CN112420638A (en) | 2019-08-22 | 2019-08-22 | Diamond film copper-clad heat sink and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284857A (en) * | 2021-11-25 | 2022-04-05 | 佛山华智新材料有限公司 | Secondary heat sink and liquid cooling heat sink integration method, integrated heat sink and application |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990038057A (en) * | 1997-11-03 | 1999-06-05 | 구자홍 | Organic electroluminescent device and manufacturing method thereof |
| US20040157089A1 (en) * | 2002-09-23 | 2004-08-12 | Gunter Kneringer | Heat sink formed of diamond-containing composite material with a multilayer coating |
| US20050194690A1 (en) * | 2002-08-09 | 2005-09-08 | Sumitomo Electric Industries, Ltd. | Submount and semiconductor device |
| US20080157347A1 (en) * | 2006-12-28 | 2008-07-03 | A. L. M. T. Corp. | Heat spreader and semiconductor device using the same |
| US20090246507A1 (en) * | 2008-01-15 | 2009-10-01 | Georgia Tech Research Corporation | Systems and methods for fabrication and transfer of carbon nanotubes |
| CN102917534A (en) * | 2012-10-24 | 2013-02-06 | 星弧涂层科技(苏州工业园区)有限公司 | DLC (Diamond like Carbon) thin film coating-based ceramic substrate |
| WO2014204204A1 (en) * | 2013-06-19 | 2014-12-24 | 일진머티리얼즈 주식회사 | Conductive heat-dissipating sheet, and electrical parts and electronic devices comprising same |
| US20160276242A1 (en) * | 2015-03-20 | 2016-09-22 | Raytheon Company | Thermal spreader having inter-metal diffusion barrier layer |
| CN105984179A (en) * | 2015-03-06 | 2016-10-05 | 兰州空间技术物理研究所 | Heat sink material and preparation method thereof |
| CN106854750A (en) * | 2016-12-06 | 2017-06-16 | 北京安泰钢研超硬材料制品有限责任公司 | A kind of diamond carbon/carbon-copper composite material and preparation method |
| CN107871722A (en) * | 2017-11-22 | 2018-04-03 | 华南理工大学 | A kind of copper-based embedded combination is heat sink and preparation method thereof |
| CN108715997A (en) * | 2018-06-07 | 2018-10-30 | 太原理工大学 | The preparation method of diamond film-copper heat sink compound |
| CN109764264A (en) * | 2019-01-14 | 2019-05-17 | 上海大学 | A kind of deep-sea LED light source for illuminating device and preparation method |
-
2019
- 2019-08-22 CN CN201910779060.0A patent/CN112420638A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990038057A (en) * | 1997-11-03 | 1999-06-05 | 구자홍 | Organic electroluminescent device and manufacturing method thereof |
| US20050194690A1 (en) * | 2002-08-09 | 2005-09-08 | Sumitomo Electric Industries, Ltd. | Submount and semiconductor device |
| US20040157089A1 (en) * | 2002-09-23 | 2004-08-12 | Gunter Kneringer | Heat sink formed of diamond-containing composite material with a multilayer coating |
| US20080157347A1 (en) * | 2006-12-28 | 2008-07-03 | A. L. M. T. Corp. | Heat spreader and semiconductor device using the same |
| US20090246507A1 (en) * | 2008-01-15 | 2009-10-01 | Georgia Tech Research Corporation | Systems and methods for fabrication and transfer of carbon nanotubes |
| CN102917534A (en) * | 2012-10-24 | 2013-02-06 | 星弧涂层科技(苏州工业园区)有限公司 | DLC (Diamond like Carbon) thin film coating-based ceramic substrate |
| WO2014204204A1 (en) * | 2013-06-19 | 2014-12-24 | 일진머티리얼즈 주식회사 | Conductive heat-dissipating sheet, and electrical parts and electronic devices comprising same |
| CN105984179A (en) * | 2015-03-06 | 2016-10-05 | 兰州空间技术物理研究所 | Heat sink material and preparation method thereof |
| US20160276242A1 (en) * | 2015-03-20 | 2016-09-22 | Raytheon Company | Thermal spreader having inter-metal diffusion barrier layer |
| CN106854750A (en) * | 2016-12-06 | 2017-06-16 | 北京安泰钢研超硬材料制品有限责任公司 | A kind of diamond carbon/carbon-copper composite material and preparation method |
| CN107871722A (en) * | 2017-11-22 | 2018-04-03 | 华南理工大学 | A kind of copper-based embedded combination is heat sink and preparation method thereof |
| CN108715997A (en) * | 2018-06-07 | 2018-10-30 | 太原理工大学 | The preparation method of diamond film-copper heat sink compound |
| CN109764264A (en) * | 2019-01-14 | 2019-05-17 | 上海大学 | A kind of deep-sea LED light source for illuminating device and preparation method |
Non-Patent Citations (5)
| Title |
|---|
| 田孟昆;余志明;刘学璋;葛婧萱;王玲;黄臣;: "过渡层对铜基金刚石薄膜的影响", 中国表面工程, no. 04, 15 August 2011 (2011-08-15) * |
| 程春晓, 姚宁, 马丙现, 杨仕娥, 赵永梅, 张兵临: "采用钛-铝-钼过渡层在铜基底上沉积金刚石薄膜的研究", 真空与低温, no. 01, 30 March 2005 (2005-03-30) * |
| 程春晓: "采用钛-铝-钼过渡层在铜基底上沉积金刚石薄膜的研究", 真空与低温, vol. 11, no. 1, 31 March 2005 (2005-03-31), pages 46 - 49 * |
| 董占民, КОПАНЪB.C., 谢志刚: "金刚石-铜复合薄膜热沉基底", 半导体学报, no. 09, 8 September 1999 (1999-09-08) * |
| 马志斌, 邬钦崇, 汪建华, 王传新, 黎向锋: "铜上采用镍过渡层化学气相沉积金刚石薄膜的研究", 无机材料学报, no. 05, 20 October 2000 (2000-10-20) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284857A (en) * | 2021-11-25 | 2022-04-05 | 佛山华智新材料有限公司 | Secondary heat sink and liquid cooling heat sink integration method, integrated heat sink and application |
| CN114284857B (en) * | 2021-11-25 | 2023-11-17 | 佛山华智新材料有限公司 | Method for integrating secondary heat sink and liquid cooling heat sink, integrated heat sink and application |
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