CN105984179A - Heat sink material and preparation method thereof - Google Patents
Heat sink material and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a heat sink material, in particular to a heat sink material applied to micro-nano-scale power devices such as micro-nano optoelectronic devices and a preparation method of the heat sink material. The heat sink material comprises three or more copper film layers and three or more graphene layers, wherein the copper film layers and the graphene layers are combined together in an alternative mode. According to the heat sink material and the preparation method thereof, the multilayer stacking structure of copper/graphene is adopted, and the composite heat sink material with the multi-stacking layers of copper/graphene is obtained by preparing the copper films and graphene alternatively. The superhigh heat conductivity characteristic of graphene is utilized, graphene is directly grown on the copper film layers, the problem that graphene of a planar structure cannot be directly applied to heat sink materials is solved, and high heat conductivity can be achieved; meanwhile, the heat sink material has very high processibility through combination of graphene and copper.
Description
Technical field
The present invention relates to a kind of heat sink material, be specifically related to a kind of heat sink material being applied to the micro/nano-scale power devices such as micro-nano opto-electronic device, and preparation method thereof.
Background technology
In the past few decades, the microelectronic component direction being allowed to towards densification, high-power and high speed of constantly pursuing in function and performance is developed, and its volume the most just develops towards microminiature direction.Semiconductor feature sizes has trended towards 100nm at present, and this will imply that the structure that can complete chip with millions of microdevices.According to this trend development, the generation of heat will be continuously increased, and the heat flux of one chip will be considerably beyond 100W/cm2, multi-chip module will be more than 25 W/cm2, and printed circuit board (PCB) will be more than 10 W/cm2, this high density and powerful demand make microelectronics heat dissipation technology become one of problem urgently to be resolved hurrily.
The settling mode of heat dissipation from microelectronic devices is progressively to be delivered among other media or environment around by heat transfer element by heat produced by the device of work, the direct radiator higher in this heat radiation one thermal conductivity of needs is close to heat release device, then first radiator absorbs the device heat that distributed of work and then passes it to indirect radiator, and this direct radiator is heat sink material.
Along with miniaturization and the development of high density high-power of high performance electronics, the heat sink material of superior performance becomes the key technology in micro-electronic manufacturing.Carbon-based material diamond, graphite etc. have the heat conductivility of excellence it is considered to be preferable heat sink material.The thermal conductivity transverse thermal conductivity of high starch breeding is up to 1100-1700W/mK, but longitudinal thermal conductivity is only 10-25W/mK.Diamond has isotropic thermal conductivity and is up to 1100-1800W/mK.But diamond is expensive, difficulty of processing big, single diamond is difficult to be used directly to heat sink material.General employing diamond particles is combined with the metal material such as copper, aluminum prepares compound heat sink material, thermal conductivity is about 400-800 W/mK, but there is the biggest difficulty in this compound heat sink material miniaturization process, process extremely difficult, the preparation of mold straight forming also is difficult to realize, and therefore also cannot be applied to the heat sink material of micro-nano opto-electronic device at present.Graphene is monoatomic layer graphite, it it is a kind of novel Heat Conduction Material, there is the thermal conductivity (~ 5000W/mK) of superelevation, the crystal structure of its two-dimension single layer carbon atom gives the character of its flexibility, make it easier to processing, it is also easy to microstructure design and preparation, but monolayer carbon atom two-dimension plane structure makes it cannot directly apply heat sink material.
Summary of the invention
It is an object of the invention to for the deficiencies in the prior art, it is provided that a kind of heat sink material that can be applicable to the micro/nano-scale power devices such as micro-nano opto-electronic device, be provided simultaneously with higher thermal conductivity.
Another technical problem solved by the invention is to provide that a kind of technique is simple, the preparation method of the heat sink material of low cost.
For solving the problems referred to above, the technical solution used in the present invention is:
A kind of heat sink material, including copper film layer and graphene layer, and copper film layer and graphene layer alternately combine, and this copper film layer and graphene layer are respectively more than 3 layers.
The preparation method of a kind of heat sink material, comprises the following steps:
A. chemism is used to be better than copper, it is easy to the material of acid or alkali reaction as substrate, first to use vacuum coating to deposit certain thickness copper film layer in substrate；
B. use transfer Graphene method or chemical vapour deposition technique on copper film layer direct growth Graphene thus form graphene layer；
C. vacuum coating is used to deposit certain thickness copper film layer on the graphene layer obtained in previous step；
The most then use direct growth graphite on transfer Graphene method or the copper film layer that obtains in previous step of chemical vapour deposition technique thus form graphene layer；
E. it is repeated in step c and step d, is repeated 1 times above；
The most last acid or alkali are removed substrate thus are obtained described heat sink material.
In the present invention, the thickness of the copper film layer that described vacuum coating obtains is not more than 10 μm.
In the present invention, described copper film layer uses chemical vapour deposition technique direct growth Graphene, with methane and hydrogen for growth presoma, methane flow is 15-30sccm, hydrogen flowing quantity 40-60sccm, growth temperature 800 DEG C-1080 degrees Celsius, growth time is more than 30 minutes.
In the present invention, described substrate is aluminum or nickel, and is removed by dilute hydrochloric acid or dilute sulfuric acid.
In the present invention, described substrate is silicon, and is removed by sodium hydroxide or potassium hydroxide.
The invention has the beneficial effects as follows:
The present invention uses many laminated construction of copper/Graphene, by alternately preparing Copper thin film and Graphene realizes the composite heat sink material of many laminations of copper/Graphene.This invention make use of the superelevation thermal conductivity characteristics of Graphene, is grown directly upon on copper film layer by Graphene, solves the problem that planar structure Graphene cannot be used directly for heat sink material, it is possible to achieve higher thermal conductivity；Make this heat sink material have good processability by the combination of Graphene Yu copper simultaneously.Good processability so that more high cooling efficiency can be realized, such as microflute radiator structure by design microstructure.This heat sink material can be applicable to the heat sink heat radiation of the micro/nano-scale power devices such as micro-nano opto-electronic device.And preparation technology flow process of the present invention is simple, processing ease, low cost, product quality is high.
Accompanying drawing explanation
Fig. 1 is the preparation flow schematic diagram of the heat sink material of the present invention.
The structural representation of the heat sink material of Fig. 2 present invention.
Fig. 3 is by the micro groove structure schematic diagram manufactured by the heat sink material of the present invention.
In figure: 1. graphene layer 2. layers of copper.
Detailed description of the invention
Disclosed is a kind of heat sink material, as in figure 2 it is shown, this heat sink material includes copper film layer and graphene layer, and copper film layer and graphene layer alternately combine, and this copper film layer and graphene layer are respectively 3 layers or more than 3 layers.
Present invention further teaches the preparation method of a kind of above-mentioned heat sink material, specific embodiment is as follows.
Embodiment 1
The preparation flow of the present invention is as it is shown in figure 1, comprise the following steps:
A. using aluminium foil as substrate, first use vacuum vapour deposition on aluminium foil and prepare copper film layer by vacuum coating equipment, controlling background vacuum is 10-2Pa, temperature is 1500 DEG C, and on aluminium foil, deposit thickness is the copper film layer of 500nm；
B. use chemical vapour deposition technique and utilize horizontal reacting furnace to grow Graphene at copper film layer, with methane and hydrogen for growth presoma, methane flow 20sccm, hydrogen flowing quantity 50sccm, growth temperature 1000 DEG C, growth time is 30 minutes, direct growth Graphene on Copper thin film thus form graphene layer；
C. after having grown, using vacuum vapour deposition and prepare copper film layer by vacuum coating equipment, controlling background vacuum is 10-2Pa, temperature is 1500 DEG C, and on the graphene layer obtained in previous step, deposit thickness is the copper film layer of 500nm；
D. use chemical vapour deposition technique and utilize horizontal reacting furnace to grow Graphene at this copper film layer, with methane and hydrogen for growth presoma, methane flow 20sccm, hydrogen flowing quantity 50sccm, growth temperature 1000 DEG C, growth time is 30 minutes, direct growth Graphene on the Copper thin film obtained in previous step thus form graphene layer；
E. it is repeated in step c and step d, is repeated 20 times, it is achieved the many laminated construction of copper/Graphene；
The most finally with dilute hydrochloric acid (10-30%) erosion removal aluminium foil thus obtain described heat sink material (Fig. 2).
The heat sink material that this method prepares can be processed into the preparation of micro groove structure, as shown in Figure 3.
Embodiment 2
The preparation flow of the present invention is as it is shown in figure 1, comprise the following steps:
A. using aluminium foil as substrate, first use vacuum vapour deposition on aluminium foil and prepare copper film layer by vacuum coating equipment, controlling background vacuum is 10-2Pa, temperature is 1500 DEG C, and on aluminium foil, deposit thickness is the copper film layer of 200nm；
B. use chemical vapour deposition technique and utilize horizontal reacting furnace to grow Graphene at copper film layer, with methane and hydrogen for growth presoma, methane flow 20sccm, hydrogen flowing quantity 50sccm, growth temperature 1000 DEG C, growth time is 30 minutes, direct growth Graphene on Copper thin film thus form graphene layer；
C. after having grown, using vacuum vapour deposition and prepare copper film layer by vacuum coating equipment, controlling background vacuum is 10-2Pa, temperature is 1500 DEG C, and on the graphene layer obtained in previous step, deposit thickness is the copper film layer of 200nm；
D. use chemical vapour deposition technique and utilize horizontal reacting furnace to grow Graphene at this copper film layer, with methane and hydrogen for growth presoma, methane flow 20sccm, hydrogen flowing quantity 50sccm, growth temperature 1000 DEG C, growth time is 30 minutes, direct growth Graphene on the Copper thin film obtained in previous step thus form graphene layer；
E. it is repeated in step c and step d, repeats 50 times, it is achieved the many laminated construction of copper/Graphene；
The most finally with dilute hydrochloric acid (10-30%) erosion removal aluminium foil thus obtain described heat sink material (Fig. 2).
The heat sink material that this method prepares can be processed into the preparation of micro groove structure, as shown in Figure 3.
Embodiment 3
The preparation flow of the present invention is as it is shown in figure 1, comprise the following steps:
A. using nickel foil as substrate, first use vacuum vapour deposition on nickel foil and prepare copper film layer by vacuum coating equipment, controlling background vacuum is 10-2Pa, temperature is 1500 DEG C, and on nickel foil, deposit thickness is the copper film layer of 200nm；
B. use Graphene transfer method to shift Graphene on copper film layer thus form graphene layer.The transfer flow of Graphene transfer method is as follows: 1) first by the long square piece having the Copper Foil of Graphene to be cut into 10 × 10cm；2) spin coater spin coating last layer lucite, rotating speed 3000 turns, time 1min are used again；3) drying and processing, temperature 100 DEG C, time 30min；4) upper surface spin coating have the length of lucite have the Copper Foil of Graphene to put into corrosion copper, time 30min in 20% salpeter solution；5) deionized water is used to clean 3 times；6) Graphene that lucite supports is transferred on Copper thin film, heat treated, temperature 80 DEG C, time 20min；7) it is finally putting into acetone soln and removes lucite, time 30min；
C. after having shifted, using vacuum vapour deposition and prepare copper film layer by vacuum coating equipment, controlling background vacuum is 10-2Pa, temperature is 1500 DEG C, and on the graphene layer obtained in previous step, deposit thickness is the copper film layer of 200nm；
D. the copper film layer using Graphene transfer method to obtain in previous step shifts Graphene thus forms graphene layer；
E. it is repeated in step c and step d, repeats 50 times, it is achieved the many laminated construction of copper/Graphene；
The most finally with dilute hydrochloric acid (10-30%) erosion removal nickel foil thus obtain described heat sink material (Fig. 2).
The heat sink material that this method prepares can be processed into the preparation of micro groove structure, as shown in Figure 3.
Embodiment 4
The preparation flow of the present invention is as it is shown in figure 1, comprise the following steps:
A. using silicon as substrate, first use vacuum vapour deposition on silicon and prepare copper film layer by vacuum coating equipment, controlling background vacuum is 10-2Pa, temperature is 1500 DEG C, and on silicon, deposit thickness is the copper film layer of 200nm；
B. using Graphene transfer method to shift Graphene on copper film layer thus form graphene layer, the transfer flow of Graphene transfer method is as follows: 1) first by the long square piece having the Copper Foil of Graphene to be cut into 10 × 10cm；2) spin coater spin coating last layer lucite, rotating speed 3000 turns, time 1min are used again；3) drying and processing, temperature 100 DEG C, time 30min；4) upper surface spin coating have the length of lucite have the Copper Foil of Graphene to put into corrosion copper, time 30min in 20% salpeter solution；5) deionized water is used to clean 3 times；6) Graphene that lucite supports is transferred on Copper thin film, heat treated, temperature 80 DEG C, time 20min；7) it is finally putting into acetone soln and removes lucite, time 30min；
C. after having shifted, using vacuum vapour deposition and prepare copper film layer by vacuum coating equipment, controlling background vacuum is 10-2Pa, temperature is 1500 DEG C, and on the graphene layer obtained in previous step, deposit thickness is the copper film layer of 200nm；
D. the copper film layer using Graphene transfer method to obtain in previous step shifts Graphene thus forms graphene layer；
E. it is repeated in step c and step d, repeats 50 times, it is achieved the many laminated construction of copper/Graphene；
The most finally with NaOH(20-40%) erosion removal silicon thus obtain described heat sink material (Fig. 2).
The heat sink material that this method prepares can be processed into the preparation of micro groove structure, as shown in Figure 3.
Claims (6)
1. a heat sink material, it is characterised in that: including copper film layer and graphene layer, and copper film layer and graphene layer alternately combine, this copper film layer and graphene layer are respectively more than 3 layers.
The preparation method of a kind of heat sink material the most according to claim 1, it is characterised in that comprise the following steps:
A. chemism is used to be better than copper, it is easy to the material of acid or alkali reaction as substrate, first to use vacuum coating to deposit certain thickness copper film layer in substrate；
B. use Graphene transfer method on copper film layer, shift Graphene thus formed graphene layer or use chemical vapour deposition technique on copper film layer direct growth Graphene thus form graphene layer；
C. vacuum coating is used to deposit certain thickness copper film layer on the graphene layer obtained in previous step；
The most then use direct growth graphite on transfer Graphene method or the copper film layer that obtains in previous step of chemical vapour deposition technique thus form graphene layer；
E. it is repeated in step c and step d, is repeated 1 times above；
The most last acid or alkali are removed substrate thus are obtained described heat sink material.
The preparation method of a kind of heat sink material the most according to claim 2, it is characterised in that: the thickness of the copper film layer that described vacuum coating obtains is not more than 10 μm.
The preparation method of a kind of heat sink material the most according to claim 2, it is characterized in that: on described copper film layer, use chemical vapour deposition technique direct growth Graphene, with methane and hydrogen for growth presoma, methane flow is 15-30sccm, hydrogen flowing quantity 40-60sccm, growth temperature 800 DEG C-1080 degrees Celsius, growth time is more than 30 minutes.
The preparation method of a kind of heat sink material the most according to claim 2, it is characterised in that: described substrate is aluminum or nickel, and is removed by dilute hydrochloric acid or dilute sulfuric acid.
The preparation method of a kind of heat sink material the most according to claim 2, it is characterised in that: described substrate is silicon, and is removed by sodium hydroxide or potassium hydroxide.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106684700A (en) * | 2017-03-02 | 2017-05-17 | 长春理工大学 | Semiconductor laser heat sink |
| CN108790368A (en) * | 2018-08-30 | 2018-11-13 | 兰州交通大学 | A kind of preparation method of bullet train IGBT encapsulation graphene/metallic composite |
| CN108899411A (en) * | 2018-07-06 | 2018-11-27 | 江苏心磁超导体有限公司 | Carbon electronics TES superconductive device and preparation method thereof |
| GB2562805A (en) * | 2017-05-26 | 2018-11-28 | Graphitene Ltd | Heat spreader and method of manufacture thereof |
| CN109244825A (en) * | 2018-09-26 | 2019-01-18 | 华南师范大学 | Edge-emission semiconductor laser and preparation method thereof with radiator structure |
| CN111069611A (en) * | 2019-12-23 | 2020-04-28 | 长飞光纤光缆股份有限公司 | Preparation method of graphite-graphene-metal composite material |
| CN112410750A (en) * | 2019-08-22 | 2021-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphene film copper-clad heat sink and preparation method thereof |
| CN112420638A (en) * | 2019-08-22 | 2021-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Diamond film copper-clad heat sink and preparation method thereof |
| CN114959697A (en) * | 2022-05-13 | 2022-08-30 | 中车工业研究院有限公司 | Preparation method of graphene/copper composite material combining physical vapor deposition and chemical vapor deposition |
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Application publication date: 20161005 |