CN103346241B - The encapsulating structure of white led lamps - Google Patents
The encapsulating structure of white led lamps Download PDFInfo
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- CN103346241B CN103346241B CN201310275154.7A CN201310275154A CN103346241B CN 103346241 B CN103346241 B CN 103346241B CN 201310275154 A CN201310275154 A CN 201310275154A CN 103346241 B CN103346241 B CN 103346241B
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Abstract
The present invention relates to a kind of encapsulating structure of white led lamps, comprise aluminum or aluminum alloy matrix, deposit thermal conductive ceramic layer on the matrix; Described thermal conductive ceramic layer deposits luminescent ceramic layer and copper conductive layer, and by mask, selective etch is carried out to described copper conductive layer and luminescent ceramic layer and form multiple conductive base, described conductive base is provided with LED chip.In the encapsulating structure of white led lamps of the present invention, the thermal conductivity of described thermal conductive ceramic layer is greater than 100W/mK, can effectively realize heat transfer and transfer, solve the heat dissipation problem of multiple blue-light LED chip.
Description
Technical field
The invention belongs to the technical field of electronic component, in particular, the present invention relates to a kind of encapsulating structure of white led lamps.
Background technology
LED is a kind of New Solid cold light source, it has, and structure is simple, lightweight, volume is little, power consumption less, fast response time and the advantage such as easy to use, and enjoy the favor of people.It is under same illumination, and power consumption and life-span all have obvious advantage than incandescent lamp and fluorescent lamp.Therefore, current people have defined a common recognition, and namely LED is the forth generation light source after incandescent lamp, fluorescent lamp and HID lamp, are acknowledged as 21 century electric light source most with prospects.
But described LED needs to utilize heat conducting material to conduct heat.Need to adopt metallic matrix (being generally aluminium) for this reason, and need electric isolution between LED chip and metallic matrix.And some ceramic material has higher heat conduction efficiency and to electricity be insulation.To use the ceramic material of high heat conduction as providing electric isolution and the still conductive intermediate materials of maintaining heat between described LED chip and metallic matrix through being everlasting for this reason.But in increasing application, need multiple LED chip to be coupled in the functional structure with electric isolution and heat conduction.And in order to hold multiple LED chip, need to use larger sized basis material, such as need to use larger metallic matrix and ceramic wafer.If but time on the ceramic component described LED chip being coupled to single interface, then the LED chip be coupled will cause difficult heat transfer, and may cause electrical conductivity and be short-circuited.
Summary of the invention
In order to overcome the above-mentioned technical problem existed in prior art, the object of the present invention is to provide a kind of encapsulating structure of white led lamps.
In order to overcome above-mentioned technical problem and realize goal of the invention, technical scheme of the present invention is as follows:
The encapsulating structure of white led lamps of the present invention, comprises aluminum or aluminum alloy matrix, deposits thermal conductive ceramic layer on the matrix; Described thermal conductive ceramic layer deposits luminescent ceramic layer and copper conductive layer, and by mask, selective etch is carried out to described copper conductive layer and luminescent ceramic layer and form multiple conductive base, described conductive base is provided with LED chip.
Wherein, described thermal conductive ceramic layer is AlN or AlON, and its thickness is 50-200 μm;
Wherein, described thermal conductive ceramic layer is AlN layer, and is prepared by PECVD method, and its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 300-320 DEG C, and operating pressure is 100-200Pa, wherein AlCl
3flow be 150-250 sccm, NH
3flow be 200-300 sccm, N
2flow 100-200 sccm, H
2flow be 1000-1200 sccm, rf frequency is 13.56MH
z, radio-frequency power is 50-100W.
Wherein, described thermal conductive ceramic layer is AlON, and is prepared by PECVD method, and its reaction system is AlCl
3-N
2o-N
2-H
2, reaction temperature is 250-280 DEG C, and operating pressure is 100-200Pa, wherein AlCl
3flow be 150-250 sccm, N
2the flow of O is 200-300 sccm, N
2flow 100-200 sccm, H
2flow be 1000-1200 sccm, rf frequency is 13.56MH
z, radio-frequency power is 50-100W.
Wherein, described luminescent ceramic layer is cerium and boron doped YAG layer, adopt laser ablation technique to prepare, described laser ablation process conditions are as follows: after the boron of the YAG powder of 98wt%, the cerium powder of 1.5-1.75wt% and 0.25-0.50wt% mixes, be pressed into thin slice as target; Then adopt Nd:YAG laser, the laser pulse power power of described Nd:YAG laser is 10
6w/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and target is 70 cm, and depositing temperature is 550-650 DEG C, and thickness is 10-20 μm.Applicant finds, the cerium adulterated by the method for laser ablation and the inhomogeneities of boron are no more than 5%, luminous intensity is significantly improved with intensity of giving out light, and luminescence is also more even.
As preferably, between described aluminum or aluminum alloy matrix and described thermal conductive ceramic layer, also have amorphous aluminum transition zone, the thickness of described amorphous aluminum transition zone is 100-500 nm.
Further preferably, described amorphous aluminum transition zone is prepared by radio frequency sputtering technique, target to be purity be 99.99% aluminium target, sputter gas is Ar, and sputtering power is 0.5-1.2 kW, and rf frequency is 13.56MHz, and operating pressure is 3-5 × 10
-3torr, substrate temperature is 25-50 DEG C.Can caking property significantly between reinforced insulation thermal conductive ceramic layer and aluminum substrate by deposited amorphous state aluminium transition zone, and can significantly reduce the thermal stress caused because of expansion coefficient difference, improve the reliability of structural entity.
Wherein, described copper conductive layer is prepared by conventional sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
Wherein, described selective etch is prepared by dry-etching method.
Technical scheme of the present invention has following beneficial effect compared to existing technology:
(1) encapsulating structure of white led lamps of the present invention, has larger sized metal substrate, and can hold multiple blue-light LED chip, and has reliable electric isolution and heat isolation between described multiple blue-light LED chips.
(2), in the encapsulating structure of white led lamps of the present invention, the thermal conductivity of described thermal conductive ceramic layer is greater than 100 W/mK, can effectively realize heat transfer and transfer, solve the heat dissipation problem of multiple blue-light LED chip.
(3) in the present invention, applicant finds by laser ablation technique, and by suitable state modulator, described cerium and boron doped YAG layer can be made, composition doping is more even, and make 85% of described cerium and the luminous light intensity of boron doped YAG layer under cathode-ray exciting to concentrate on 520-560nm by composition and state modulator, thus under the exciting of blue-ray LED, significantly improve luminous efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the encapsulating structure of white led lamps of the present invention.
Embodiment
As shown in Figure 1, the encapsulating structure of white led lamps of the present invention, comprises aluminum or aluminum alloy matrix 1, and described matrix 1 deposits thermal conductive ceramic layer 2; Described thermal conductive ceramic layer 2 deposits luminescent ceramic layer 3 and copper conductive layer 4, and by mask, selective etch is carried out to described copper conductive layer 4 and luminescent ceramic layer 3 and form multiple conductive base 5, described conductive base 5 is provided with LED chip 6.
embodiment 1
The encapsulating structure of the white led lamps described in the present embodiment, comprises aluminum or aluminum alloy matrix, deposits thermal conductive ceramic layer on the matrix; Described thermal conductive ceramic layer deposits luminescent ceramic layer and copper conductive layer, and by mask, by selectivity dry ecthing, multiple conductive base is formed to described copper conductive layer and luminescent ceramic layer, described conductive base is provided with blue-light LED chip.Described thermal conductive ceramic layer is AlN, and thickness is 100 μm; And prepared by PECVD method, its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 320 DEG C, and operating pressure is 150Pa, wherein AlCl
3flow be 200 sccm, NH
3flow be 300 sccm, N
2flow 100 sccm, H
2flow be 1200 sccm, rf frequency is 13.56MH
z, radio-frequency power is 100W.Described luminescent ceramic layer is cerium and boron doped YAG layer, and adopt laser ablation technique to prepare, described laser ablation process conditions are as follows: after the boron of the YAG powder of 98wt%, the cerium powder of 1.5wt% and 0.50wt% mixes, be pressed into thin slice as target; Then adopt Nd:YAG laser, the laser pulse power power of described Nd:YAG laser is 10
6w/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and target is 70 cm, and depositing temperature is 650 DEG C, and thickness is 10 μm.The cerium adulterated by the method for described laser ablation and the inhomogeneities of boron are no more than 5%, luminous intensity is significantly improved with intensity of giving out light, and luminescence are also more even.And described copper conductive layer is prepared by conventional sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
embodiment 2
The encapsulating structure of the white led lamps described in the present embodiment, comprises aluminum or aluminum alloy matrix, deposits thermal conductive ceramic layer on the matrix; Described thermal conductive ceramic layer deposits luminescent ceramic layer and copper conductive layer, and by mask, by selectivity dry ecthing, multiple conductive base is formed to described copper conductive layer and luminescent ceramic layer, described conductive base is provided with blue-light LED chip.Described thermal conductive ceramic layer is AlON, and is prepared by PECVD method, and its reaction system is AlCl
3-N
2o-N
2-H
2, reaction temperature is 250 DEG C, and operating pressure is 180Pa, wherein AlCl
3flow be 200 sccm, N
2the flow of O is 200 sccm, N
2flow 200 sccm, H
2flow be 1200 sccm, rf frequency is 13.56MH
z, radio-frequency power is 100W.Described luminescent ceramic layer is cerium and boron doped YAG layer, and adopt laser ablation technique to prepare, described laser ablation process conditions are as follows: after the boron of the YAG powder of 98wt%, the cerium powder of 1.75wt% and 0.25wt% mixes, be pressed into thin slice as target; Then adopt Nd:YAG laser, the laser pulse power power of described Nd:YAG laser is 10
6w/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and target is 72.5cm, and depositing temperature is 600 DEG C, and thickness is 10 μm.The cerium adulterated by the method for described laser ablation and the inhomogeneities of boron are no more than 5%, luminous intensity is significantly improved with intensity of giving out light, and luminescence are also more even.And described copper conductive layer is prepared by conventional sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
embodiment 3
The encapsulating structure of the white led lamps described in the present embodiment, comprises aluminum or aluminum alloy matrix, on the matrix first deposited amorphous state aluminium transition zone, then deposits thermal conductive ceramic layer; Described thermal conductive ceramic layer deposits luminescent ceramic layer and copper conductive layer, and by mask, by selectivity dry ecthing, multiple conductive base is formed to described copper conductive layer and luminescent ceramic layer, described conductive base is provided with blue-light LED chip.The thickness of described amorphous aluminum transition zone is 100-500 nm.Described amorphous aluminum transition zone is prepared by radio frequency sputtering technique, target to be purity be 99.99% aluminium target, sputter gas is Ar, and sputtering power is 1.0kW, and rf frequency is 13.56MHz, and operating pressure is 3-5 × 10
-3torr, substrate temperature is 25 DEG C.Described thermal conductive ceramic layer is AlON, and is prepared by PECVD method, and its reaction system is AlCl
3-N
2o-N
2-H
2, reaction temperature is 250 DEG C, and operating pressure is 180Pa, wherein AlCl
3flow be 200 sccm, N
2the flow of O is 200 sccm, N
2flow 200 sccm, H
2flow be 1200 sccm, rf frequency is 13.56MH
z, radio-frequency power is 100W.Described luminescent ceramic layer is cerium and boron doped YAG layer, and adopt laser ablation technique to prepare, described laser ablation process conditions are as follows: after the boron of the YAG powder of 98wt%, the cerium powder of 1.75wt% and 0.25wt% mixes, be pressed into thin slice as target; Then adopt Nd:YAG laser, the laser pulse power power of described Nd:YAG laser is 10
6w/cm
2, frequency is 1000Hz, and pulse duration is 100 ns, and sweep speed is 5-10 cm/s, and the distance between substrate and target is 72.5cm, and depositing temperature is 600 DEG C, and thickness is 10 μm.The cerium adulterated by the method for described laser ablation and the inhomogeneities of boron are no more than 5%, luminous intensity is significantly improved with intensity of giving out light, and luminescence are also more even.And described copper conductive layer is prepared by conventional sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
For the ordinary skill in the art, be to be understood that and can without departing from the scope of the present disclosure, equivalent replacement or equivalent transformation form can be adopted to implement above-described embodiment.Protection scope of the present invention is not limited to the specific embodiment of embodiment part, as long as no the execution mode departing from invention essence, within the protection range being all interpreted as having dropped on application claims.
Claims (5)
1. an encapsulating structure for white led lamps, comprises aluminum or aluminum alloy matrix, it is characterized in that depositing thermal conductive ceramic layer on the matrix; Described thermal conductive ceramic layer deposits luminescent ceramic layer and copper conductive layer successively, and by mask, selective etch is carried out to described copper conductive layer and luminescent ceramic layer and form multiple conductive base, described conductive base is provided with blue-light LED chip; The thermal conductivity of described thermal conductive ceramic layer is greater than 100W/mK; Described luminescent ceramic layer is cerium and boron doped YAG layer, adopt laser ablation technique to prepare, described laser ablation process conditions are as follows: after the boron of the YAG powder of 98wt%, the cerium powder of 1.5-1.75wt% and 0.25-0.50wt% mixes, be pressed into thin slice as target; Then adopt Nd:YAG laser, the laser pulse power power of described Nd:YAG laser is 10
6w/cm
2, frequency is 1000Hz, and pulse duration is 100ns, and sweep speed is 5-10cm/s, and the distance between substrate and target is 70cm, and depositing temperature is 550-650 DEG C, and thickness is 10-20 μm.
2. the encapsulating structure of white led lamps according to claim 1, it is characterized in that described thermal conductive ceramic layer is AlN or AlON, and its thickness is 50-200 μm; Described thermal conductive ceramic layer is AlN layer, and is prepared by PECVD method, and its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 300-320 DEG C, and operating pressure is 100-200Pa, wherein AlCl
3flow be 150-250sccm, NH
3flow be 200-300sccm, N
2flow 100-200sccm, H
2flow be 1000-1200sccm, rf frequency is 13.56MH
z, radio-frequency power is 50-100W.
3. the encapsulating structure of white led lamps according to claim 1, it is characterized in that described thermal conductive ceramic layer is AlON, and its thickness is 50-200 μm; And prepared by PECVD method, its reaction system is AlCl
3-N
2o-N
2-H
2, reaction temperature is 250-280 DEG C, and operating pressure is 100-200Pa, wherein AlCl
3flow be 150-250sccm, N
2the flow of O is 200-300sccm, N
2flow 100-200sccm, H
2flow be 1000-1200sccm, rf frequency is 13.56MH
z, radio-frequency power is 50-100W.
4. the encapsulating structure of white led lamps according to claim 1, it is characterized in that also having amorphous aluminum transition zone between described aluminum or aluminum alloy matrix and described thermal conductive ceramic layer, and the thickness of described amorphous aluminum transition zone is 100-500nm.
5. the encapsulating structure of white led lamps according to claim 4, it is characterized in that described amorphous aluminum transition zone is prepared by radio frequency sputtering technique, target to be purity be 99.99% aluminium target, sputter gas is Ar, sputtering power is 0.5-1.2kW, rf frequency is 13.56MHz, and operating pressure is 3-5 × 10
-3torr, substrate temperature is 25-50 DEG C.
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| CN109388002B (en) * | 2017-08-03 | 2020-12-08 | 深圳光峰科技股份有限公司 | Fluorescent chip, method for manufacturing same, and light-emitting device |
| CN113228315B (en) | 2018-12-27 | 2024-11-05 | 电化株式会社 | Phosphor substrate, light-emitting substrate, and lighting device |
| CN113272976B (en) | 2018-12-27 | 2024-11-08 | 电化株式会社 | Phosphor substrate, light-emitting substrate, and lighting device |
| CN113228313A (en) | 2018-12-27 | 2021-08-06 | 电化株式会社 | Phosphor substrate, light-emitting substrate, and lighting device |
| CN113228316A (en) | 2018-12-27 | 2021-08-06 | 电化株式会社 | Phosphor substrate, light-emitting substrate, and lighting device |
| CN113228314A (en) | 2018-12-27 | 2021-08-06 | 电化株式会社 | Phosphor substrate, light-emitting substrate, and lighting device |
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| CN101076224A (en) * | 2006-05-16 | 2007-11-21 | 南京汉德森科技股份有限公司 | Aluminum-base printing circuit board and its production |
| CN201820781U (en) * | 2010-03-03 | 2011-05-04 | 徐健 | Novel high-power light-emitting diode (LED) ceramic heat dissipation integrated module |
| CN102569597A (en) * | 2011-08-20 | 2012-07-11 | 中国科学院福建物质结构研究所 | LED (Light Emitting Diode) packaging structure using rear earth element doped transparent ceramic as base |
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2013
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101076224A (en) * | 2006-05-16 | 2007-11-21 | 南京汉德森科技股份有限公司 | Aluminum-base printing circuit board and its production |
| CN201820781U (en) * | 2010-03-03 | 2011-05-04 | 徐健 | Novel high-power light-emitting diode (LED) ceramic heat dissipation integrated module |
| CN102569597A (en) * | 2011-08-20 | 2012-07-11 | 中国科学院福建物质结构研究所 | LED (Light Emitting Diode) packaging structure using rear earth element doped transparent ceramic as base |
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