CN103354221B - For many ceramic layers pattern structure substrate of optics and electronic device - Google Patents
For many ceramic layers pattern structure substrate of optics and electronic device Download PDFInfo
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- CN103354221B CN103354221B CN201310238565.9A CN201310238565A CN103354221B CN 103354221 B CN103354221 B CN 103354221B CN 201310238565 A CN201310238565 A CN 201310238565A CN 103354221 B CN103354221 B CN 103354221B
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Abstract
The present invention relates to a kind of many ceramic layers pattern structure substrate for optics and electronic device, comprise metallic matrix, and on described metallic matrix, be formed with withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating successively; Between described withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, there is transition zone, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and transition zone and form multiple isolation pedestal; And on described isolation pedestal, form metal circuitry.Many ceramic layers pattern structure for optics and electronic device of the present invention, there is larger sized metal substrate, and multiple optics and/or electronic device can be held, and there is between described multiple optics and/or electronic device good electric isolution and heat isolation.
Description
Technical field
The invention belongs to electronic technology field, in particular, the present invention relates to a kind of many ceramic layers pattern structure substrate for optics and electronic device.
Background technology
For the device of optics and/or electronics, as integrated circuit or laser diode all need to utilize heat conducting material to conduct heat.Need to adopt metallic matrix for this reason, as Copper substrate, and often need electric isolution between the device and metallic matrix of described optics and/or electronics.And some ceramic material has higher heat conduction efficiency and to electricity be insulation.For this reason through using the ceramic material of high heat conduction as providing electric isolution and the still conductive intermediate materials of maintaining heat between the device and metallic matrix of be everlasting optics and/or electronics.In order to provide from the device of optics and/or electronics to the efficient heat transfer of metallic matrix, between pottery and metallic matrix, good hot interface is provided to be required.
And in increasing application, need multiple optics and/or electronic device in the functional structure with electric isolution and heat conduction.And in order to hold multiple optics and/or electronic device, need to use larger sized basis material, such as need to use larger metallic matrix and ceramic wafer.If but by described multiple optics and/or electronic device to the ceramic component at single interface time, then will cause difficult heat transfer between the optics of each coupling and/or electronic device, and may electrical conductivity be caused and be short-circuited.For this reason, need between multiple optics and/or electronic device, provide electric isolution and heat isolation.
Summary of the invention
In order to solve above-mentioned technical problem of the prior art, the object of the present invention is to provide a kind of many ceramic layers pattern structure substrate for optics and electronic device.
To achieve these goals, present invention employs following technical scheme:
Many ceramic layers pattern structure substrate for optics and electronic device of the present invention, comprises metallic matrix, and on described metallic matrix, is formed with withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating successively; Between described withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, there is transition zone, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and transition zone and form multiple isolation pedestal; And in many ceramic layers the superiors described in described isolation pedestal, form metal circuitry.
Wherein, the thickness of described withstand voltage ceramic layer is 10-500um; Described withstand voltage ceramic layer is selected from aluminium oxide, one or more in aluminum oxynitride or carborundum.Described withstand voltage ceramic layer can prevent the problem of high electrical breakdown, improves the safety and stability of described structure.
Wherein, described withstand voltage ceramic layer can be prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD), plasma reinforced chemical vapour deposition or powder sintering.Prepare preferably by powder sintering.
Wherein, the thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500um; And be preferably AlN, AlON or SiN.Described highly heat-conductive carbon/ceramic enamel coating can realize laterally and radial heat transfer, solves the heat dissipation problem of optics and/or electronic unit.
Wherein, described highly heat-conductive carbon/ceramic enamel coating can be prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
Wherein, described transition zone can be prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
Wherein, engaged by active soldering between described metal substrate with withstand voltage ceramic layer.
Wherein, the solder that described active soldering uses contains the B of Ce, 0.1-0.2wt% of Ni, 0.5-0.7wt% of Mn, 1.8-2.1wt% of Al, 0.65-0.95wt% of Sn, 2.7-3.2wt% of Si, 5.2-7.2wt% of Ti, 1.2-1.5wt% of In, 2.1-2.5wt% of Ag, 0.8-1.0wt% of 0.5-0.8wt% and the Cu of surplus.
Wherein, described metal circuitry by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition metal level, and obtains described metal circuitry by dry ecthing; Or the mode that described metal circuitry is also sintered by direct type metal slurry is made.
Technical scheme of the present invention has following beneficial effect compared to existing technology:
(1) the many ceramic layers pattern structure substrate for optics and electronic device of the present invention, there is larger sized metal substrate, and multiple optics and/or electronic device can be held, and there is between described multiple optics and/or electronic device good electric isolution and heat isolation.
(2) of the present invention in many ceramic layers pattern structure substrate of optics and electronic device, the thermal conductivity of described highly heat-conductive carbon/ceramic enamel coating is greater than 50W/mK, radial effective heat transfer and transfer can be realized, solve the heat dissipation problem of optics and/or electronic unit; But also there is high electric-breakdown resistance energy.
Accompanying drawing explanation
Fig. 1 for described in embodiment 1 for the schematic diagram of many ceramic layers pattern structure substrate of optics and electronic device.
Fig. 2 for described in embodiment 2 for the schematic diagram of many ceramic layers pattern structure substrate of optics and electronic device.
Embodiment
Many ceramic layers pattern structure substrate for optics and electronic device of the present invention, comprises metallic matrix, and on described metallic matrix, is formed with withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating successively; Between described withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, there is transition zone, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and transition zone and form multiple isolation pedestal; And in many ceramic layers the superiors described in described isolation pedestal, form metal circuitry.The thickness of described withstand voltage ceramic layer is 10-500um; Described withstand voltage ceramic layer is selected from aluminium oxide, one or more in aluminum oxynitride or carborundum.Described withstand voltage ceramic layer can be prepared by powder sintering.The thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500um; And be preferably AlN, AlON or SiN.Described highly heat-conductive carbon/ceramic enamel coating can be prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.Described transition zone can be prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.Engaged by active soldering between described metal substrate with withstand voltage ceramic layer, the solder that described active soldering uses contains the B of Ce, 0.1-0.2wt% of Ni, 0.5-0.7wt% of Mn, 1.8-2.1wt% of Al, 0.65-0.95wt% of Sn, 2.7-3.2wt% of Si, 5.2-7.2wt% of Ti, 1.2-1.5wt% of In, 2.1-2.5wt% of Ag, 0.8-1.0wt% of 0.5-0.8wt% and the Cu of surplus.The solder that described active soldering uses is prepared by water fog method, its preparation method comprises the following steps: (1) is by the mixing of the metal dust raw material of said ratio and heat fused forms aluminium alloy, utilize the atomized water of pressure >=40MPa to carry out cooling crush process to described aluminium alloy, form alloy powder; (2) drying is carried out to described alloy powder and reduced anneal process obtains described solder, wherein reduced anneal atmosphere adopts hydrogen annealing, annealing temperature is 250-300 DEG C, annealing time is 20-30 minute, oxygen content <2500ppm in described rare earth pre-alloyed powder after reduced anneal.In the present invention, described solder changes to fill a prescription in the past and welds once lack of homogeneity by after simple substance powder mixing soldering, the easy deviation of composition, brazing temperature is higher, the shortcomings such as grade of quality stability difference, improve the wettability between brazing layer and metallic matrix and ceramic layer, and improve the reliability of brazing layer metallurgical, bond.
embodiment 1
As shown in Figure 1, the many ceramic layers pattern structure substrate for optics and electronic device described in the present embodiment, comprises aluminum or aluminum alloy matrix 10, and on described metallic matrix, is formed with the withstand voltage ceramic layer 20 of SiC and AlN highly heat-conductive carbon/ceramic enamel coating 40 successively; Described SiC is withstand voltage has aluminium transition zone 30 between ceramic layer 20 and AlN highly heat-conductive carbon/ceramic enamel coating 40, and carries out selective etch by mask to described AlN highly heat-conductive carbon/ceramic enamel coating 40 and aluminium transition zone 30 and form multiple isolation pedestal 50; And in many ceramic layers the superiors described in described isolation pedestal, form metal circuitry (not shown).Described SiC is withstand voltage, and ceramic layer is prepared into by electric arc ion-plating deposition method, and thickness is 200um.Wherein, the step of described aluminium transition zone adopts following technique: suction to 5.0 × 10
-4pa, passes into the Ar that purity is 99.99%, flow 20sccm to vacuum coating indoor, and keeps the working vacuum degree of vacuum coating indoor to be 50Pa, open a pair mid frequency sputtering power supply with aluminium target sputter cathode, power 10kW; Open grid bias power supply, grid bias power supply is high-frequency impulse grid bias power supply, voltage 50V, frequency 20kHz, and duty ratio 90% replaces, and substrate deposition temperature remains on 20 DEG C simultaneously, sedimentation time 2 minutes, and deposit thickness is 200nm; Described transition zone is nonconductive structures, and thermal conductivity is good, adopts this transition zone can not only make to have good caking property between described withstand voltage ceramic layer and described thermal conductive ceramic layer, and can also improve the thermal conductivity of described system further.And the step of described AlN highly heat-conductive carbon/ceramic enamel coating adopts following technique, its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 420-450 DEG C, and operating pressure is 1200Pa, wherein AlCl
3flow be 50ml/min, NH
3flow be 15-35ml/min, N
2flow be 15-20ml/min, H
2flow be 500ml/min, film thickness is 200 μm.The breakdown voltage resistant of the structure obtained by this embodiment is greater than 5.0kV, and the thermal conductivity of described ceramic coating is greater than 100W/mK.Structure described in the present embodiment may be used for the electronic device such as optics or wiring board of such as LED etc., and can on single metal substrate the multiple optics of intensive laying and/or electronic device, and the heat transfer between described multiple optics and/or electronic device and conductivity need not be worried.
embodiment 2
As shown in Figure 2, the many ceramic layers pattern structure substrate for optics and electronic device described in the present embodiment, comprises aluminum or aluminum alloy matrix 10, and on described metallic matrix, is formed with the withstand voltage ceramic layer 20 of SiC and AlN highly heat-conductive carbon/ceramic enamel coating 40 successively; Described SiC is withstand voltage has aluminium transition zone 30 between ceramic layer 20 and AlN highly heat-conductive carbon/ceramic enamel coating 40, is provided with active soldering layer 60 between described alloy matrix aluminum 10 and the withstand voltage ceramic layer 20 of described SiC; And by mask, selective etch is carried out to described AlN highly heat-conductive carbon/ceramic enamel coating 40 and aluminium transition zone 30 and form multiple isolation pedestal 50; And in many ceramic layers the superiors described in described isolation pedestal, form metal circuitry (not shown).Described SiC is withstand voltage, and ceramic layer is prepared by powder sintering, and SiC is withstand voltage, and ceramic layer thickness is 200 μm.Wherein, the step of described transition zone adopts following technique: suction to 5.0 × 10
-4pa, passes into the Ar that purity is 99.99%, flow 20sccm to vacuum coating indoor, and keeps the working vacuum degree of vacuum coating indoor to be 50Pa, open a pair mid frequency sputtering power supply with aluminium target sputter cathode, power 10kW; Open grid bias power supply, grid bias power supply is high-frequency impulse grid bias power supply, voltage 50V, frequency 20kHz, and duty ratio 90% replaces, and substrate deposition temperature remains on 20 DEG C simultaneously, sedimentation time 2 minutes, and deposit thickness is 200nm; Described transition zone is nonconductive structures, and thermal conductivity is good, adopts this transition zone can not only make to have good caking property between described withstand voltage ceramic layer and described thermal conductive ceramic layer, and can also improve the thermal conductivity of described system further.And the step of described AlN highly heat-conductive carbon/ceramic enamel coating adopts following technique, its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 420-450 DEG C, and operating pressure is 1200Pa, wherein AlCl
3flow be 50ml/min, NH
3flow be 15-35ml/min, N
2flow be 15-20ml/min, H
2flow be 500ml/min, film thickness is 200 μm.And described active soldering adopts above-mentioned water fog method to prepare, and in the solder used, contain the B of Ce, 0.1wt% and the Cu of surplus of Ni, 0.5wt% of Mn, 1.8wt% of Al, 0.65wt% of Sn, 2.7wt% of Si, 7.2wt% of Ti, 1.5wt% of In, 2.1wt% of Ag, 0.8wt% of 0.5wt%.The breakdown voltage resistant of the structure obtained by this embodiment is greater than 5.0kV, and the thermal conductivity of described ceramic coating is greater than 100W/mK.Structure described in the present embodiment may be used for the electronic device such as optics or wiring board of such as LED etc., and can on single metal substrate the multiple optics of intensive laying and/or electronic device, and the heat transfer between described multiple optics and/or electronic device and conductivity need not be worried.
For the ordinary skill in the art, be to be understood that and can without departing from the scope of the present disclosure, equivalent replacement or equivalent transformation form can be adopted to implement above-described embodiment.Protection scope of the present invention is not limited to the specific embodiment of embodiment part, as long as no the execution mode departing from invention essence, within the protection range being all interpreted as having dropped on application claims.
Claims (8)
1., for many ceramic layers pattern structure substrate of optics and electronic device, comprise metallic matrix, it is characterized in that on described metallic matrix, be formed with withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating successively, between described withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, there is transition zone, and by mask, selective etch is carried out to described highly heat-conductive carbon/ceramic enamel coating and transition zone and form multiple isolation pedestal, and in many ceramic layers the superiors described in described isolation pedestal, form metal circuitry, engaged by active soldering between described metal substrate with withstand voltage ceramic layer, the solder that described active soldering uses contains the Ag of 0.5-0.8wt%, the In of 0.8-1.0wt%, the Ti of 2.1-2.5wt%, the Si of 1.2-1.5wt%, the Sn of 5.2-7.2wt%, the Al of 2.7-3.2wt%, the Mn of 0.65-0.95wt%, the Ni of 1.8-2.1wt%, the Ce of 0.5-0.7wt%, the B of 0.1-0.2wt% and the Cu of surplus, the solder that described active soldering uses is prepared by water fog method, its preparation method comprises the following steps: (1) is by the mixing of the metal dust raw material of said ratio and heat fused forms aluminium alloy, the atomized water of pressure >=40MPa is utilized to carry out cooling crush process to described aluminium alloy, form alloy powder, (2) drying is carried out to described alloy powder and reduced anneal process obtains described solder, wherein reduced anneal atmosphere adopts hydrogen annealing, annealing temperature is 250-300 DEG C, annealing time is 20-30 minute, oxygen content <2500ppm in described alloy powder after reduced anneal.
2. the many ceramic layers pattern structure substrate for optics and electronic device according to claim 1, is characterized in that the thickness of described withstand voltage ceramic layer is 10-500um; Described withstand voltage ceramic layer is selected from aluminium oxide, one or more in aluminum oxynitride or carborundum.
3. the many ceramic layers pattern structure substrate for optics and electronic device according to claim 1 and 2, is characterized in that described withstand voltage ceramic layer is prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD), plasma reinforced chemical vapour deposition or powder sintering.
4. the many ceramic layers pattern structure substrate for optics and electronic device according to claim 1, is characterized in that the thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500um; And described highly heat-conductive carbon/ceramic enamel coating is AlN, AlON or SiN.
5. the many ceramic layers pattern structure substrate for optics and electronic device according to claim 4, is characterized in that described highly heat-conductive carbon/ceramic enamel coating is prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
6. the many ceramic layers pattern structure substrate for optics and electronic device according to claim 1, is characterized in that described transition zone is prepared by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition method.
7. the many ceramic layers pattern structure substrate for optics and electronic device according to claim 3, is characterized in that described withstand voltage ceramic layer is prepared by powder sintering.
8. the many ceramic layers pattern structure substrate for optics and electronic device according to claim 1 and 2, it is characterized in that described metal circuitry is by sputtering, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition metal level, and obtain described metal circuitry by dry ecthing; Or the mode that described metal circuitry is also sintered by direct type metal slurry is made.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569625A (en) * | 2012-01-05 | 2012-07-11 | 中国计量学院 | Copper line-clad aluminum silicon carbide ceramic substrate applicable to radiation of high-power LED |
| CN202753512U (en) * | 2012-07-11 | 2013-02-27 | 铜陵颐和泰新材料股份有限公司 | Copper-clad plate with aluminum base ceramic composite structure |
| CN103079339A (en) * | 2013-01-28 | 2013-05-01 | 深圳市泓亚光电子有限公司 | Metal ceramic composite substrate and manufacturing method for same |
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| EP1667508B1 (en) * | 2003-09-25 | 2012-07-11 | Kabushiki Kaisha Toshiba | Ceramic circuit board, method for making the same, and power module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569625A (en) * | 2012-01-05 | 2012-07-11 | 中国计量学院 | Copper line-clad aluminum silicon carbide ceramic substrate applicable to radiation of high-power LED |
| CN202753512U (en) * | 2012-07-11 | 2013-02-27 | 铜陵颐和泰新材料股份有限公司 | Copper-clad plate with aluminum base ceramic composite structure |
| CN103079339A (en) * | 2013-01-28 | 2013-05-01 | 深圳市泓亚光电子有限公司 | Metal ceramic composite substrate and manufacturing method for same |
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Address after: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee after: SUZHOU JINGPIN ADVANCED MATERIALS Co.,Ltd. Address before: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee before: SUZHOU JINGPIN OPTOELECTRONICS Inc. |
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