The many ceramic layers pattern structure substrate that is used for optics and electronic device
Technical field
The invention belongs to electronic technology field, in particular, the present invention relates to a kind of many ceramic layers pattern structure substrate for optics and electronic device.
Background technology
Be used for the device of optics and/or electronics, all need to utilize heat conducting material to conduct heat such as integrated circuit or laser diode.Need to adopt metallic matrix for this reason, such as the copper matrix, and between the device of described optics and/or electronics and metallic matrix, often need the electricity isolation.And some ceramic material has higher heat conduction efficiency and electricity is insulated.The ceramic material that for this reason uses high heat conduction between the device of be everlasting optics and/or electronics and metallic matrix is as being used for providing electricity isolation and the conductive intermediate materials of maintaining heat still.For the efficient heat transfer from the device of optics and/or electronics to metallic matrix is provided, it is essential that good hot interface is provided between pottery and metallic matrix.
And in increasing the application, a plurality of optics and/or electronic device need to be coupled in the functional structure with electricity isolation and heat conduction.And in order to hold a plurality of optics and/or electronic device, need to use larger sized basis material, for example need to use larger metallic matrix and ceramic wafer.If yet when described a plurality of optics and/or electronic device being coupled on the ceramic component at single interface, will cause difficult heat transfer between the optics of each coupling and/or the electronic device, and may cause electrically conduction and be short-circuited.For this reason, need between a plurality of optics and/or electronic device, provide electricity isolation and heat isolation.
Summary of the invention
In order to solve above-mentioned technical problem of the prior art, the object of the present invention is to provide a kind of many ceramic layers pattern structure substrate for optics and electronic device.
To achieve these goals, the present invention has adopted following technical scheme:
Many ceramic layers pattern structure substrate for optics and electronic device of the present invention comprises metallic matrix, and is formed with successively withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating on described metallic matrix; Have transition zone between described withstand voltage ceramic layer and the highly heat-conductive carbon/ceramic enamel coating, and by mask described highly heat-conductive carbon/ceramic enamel coating and transition zone are carried out selective etch and form a plurality of isolation pedestals; And form the metallic circuit layer in the described many ceramic layers of the described isolation pedestal the superiors.
Wherein, the thickness of described withstand voltage ceramic layer is 10-500 um; Described withstand voltage ceramic layer is selected from aluminium oxide, one or more in aluminum oxynitride or the carborundum.Described withstand voltage ceramic layer can prevent the problem of high electrical breakdown, improves the safety and stability of described structure.
Wherein, described withstand voltage ceramic layer can prepare by sputter, evaporation, arc deposited, chemical vapour deposition (CVD), plasma reinforced chemical vapour deposition or powder sintering.Preferably prepare by powder sintering.
Wherein, the thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500 um; And be preferably AlN, AlON or SiN.Described highly heat-conductive carbon/ceramic enamel coating can be realized laterally and the conduction of heat radially, solves the heat dissipation problem of optics and/or electronic unit.
Wherein, described highly heat-conductive carbon/ceramic enamel coating can obtain by sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition legal system are standby.
Wherein, described transition zone can obtain by sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition legal system are standby.
Wherein, engage by active soldering between described metal substrate and the withstand voltage ceramic layer.
Wherein, the solder that uses of described active soldering contains the B of Ce, 0.1-0.2wt% of Ni, 0.5-0.7wt% of Mn, 1.8-2.1wt% of Al, 0.65-0.95wt% of Sn, 2.7-3.2 wt% of Si, 5.2-7.2 wt% of Ti, 1.2-1.5 wt% of In, 2.1-2.5 wt% of Ag, 0.8-1.0 wt% of 0.5-0.8wt% and the Cu of surplus.
Wherein, described metallic circuit layer is by sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition metal level, and obtains described metallic circuit layer by dry ecthing; Perhaps described metallic circuit layer is made by the mode of direct type metal slurry and sintering.
Technical scheme of the present invention has following beneficial effect compared to existing technology:
(1) the many ceramic layers pattern structure substrate for optics and electronic device of the present invention, has larger sized metal substrate, and can hold a plurality of optics and/or electronic device, and have good electricity isolation and heat isolation between described a plurality of optics and/or the electronic device.
(2) the many ceramic layers pattern structure substrate for optics and electronic device of the present invention, the thermal conductivity of described highly heat-conductive carbon/ceramic enamel coating is greater than 50 W/mK, can realize radially effectively heat conduction and transfer, solve the heat dissipation problem of optics and/or electronic unit; But also has high proof voltage breakdown performance.
Description of drawings
Fig. 1 is the schematic diagram of the described many ceramic layers pattern structure substrate for optics and electronic device of embodiment 1.
Fig. 2 is the schematic diagram of the described many ceramic layers pattern structure substrate for optics and electronic device of embodiment 2.
Embodiment
Many ceramic layers pattern structure substrate for optics and electronic device of the present invention comprises metallic matrix, and is formed with successively withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating on described metallic matrix; Have transition zone between described withstand voltage ceramic layer and the highly heat-conductive carbon/ceramic enamel coating, and by mask described highly heat-conductive carbon/ceramic enamel coating and transition zone are carried out selective etch and form a plurality of isolation pedestals; And form the metallic circuit layer in the described many ceramic layers of the described isolation pedestal the superiors.The thickness of described withstand voltage ceramic layer is 10-500 um; Described withstand voltage ceramic layer is selected from aluminium oxide, one or more in aluminum oxynitride or the carborundum.Described withstand voltage ceramic layer can prepare by powder sintering.The thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500 um; And be preferably AlN, AlON or SiN.Described highly heat-conductive carbon/ceramic enamel coating can obtain by sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition legal system are standby.Described transition zone can obtain by sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition legal system are standby.Engage by active soldering between described metal substrate and the withstand voltage ceramic layer, the solder that described active soldering uses contains the B of Ce, 0.1-0.2wt% of Ni, 0.5-0.7wt% of Mn, 1.8-2.1wt% of Al, 0.65-0.95wt% of Sn, 2.7-3.2 wt% of Si, 5.2-7.2 wt% of Ti, 1.2-1.5 wt% of In, 2.1-2.5 wt% of Ag, 0.8-1.0 wt% of 0.5-0.8wt% and the Cu of surplus.The solder that described active soldering uses prepares by water fog method, its preparation method may further comprise the steps: mix the metal dust raw material of said ratio and heat fused formation aluminium alloy (1), utilize the atomized water of pressure 〉=40MPa that described aluminium alloy is carried out the cooling crush processing, form alloy powder; (2) described alloy powder being carried out drying and reduced anneal processes and obtains described solder, wherein reduced anneal atmosphere adopts hydrogen annealing, annealing temperature is 250-300 ℃, and annealing time is 20-30 minute, oxygen content<2500 ppm in the described rare earth pre-alloyed powder after the reduced anneal.In the present invention, described solder changes filled a prescription by welding once lack of homogeneity after the simple substance powder mixing soldering in the past, the easy deviation of composition, brazing temperature is higher, the shortcomings such as grade that quality stability is poor, improve the wettability between brazing layer and metallic matrix and the ceramic layer, and improved the reliability of brazing layer metallurgical, bond.
Embodiment 1
As shown in Figure 1, the described many ceramic layers pattern structure substrate for optics and electronic device of the present embodiment comprises aluminum or aluminum alloy matrix 10, and is formed with successively the withstand voltage ceramic layer 20 of SiC and AlN highly heat-conductive carbon/ceramic enamel coating 40 on described metallic matrix; Described SiC is withstand voltage to have aluminium transition zone 30 between ceramic layer 20 and the AlN highly heat-conductive carbon/ceramic enamel coating 40, and by mask described AlN highly heat-conductive carbon/ceramic enamel coating 40 and aluminium transition zone 30 is carried out selective etch and form a plurality of isolation pedestals 50; And form metallic circuit layer (not shown) in the described many ceramic layers of the described isolation pedestal the superiors.The withstand voltage ceramic layer of described SiC is prepared into by the electric arc ion-plating deposition method, and thickness is 200 um.Wherein, the step of described aluminium transition zone adopts following technique: suction to 5.0 * 10
-4Pa is 99.99% Ar to the indoor purity that passes into of vacuum coating, flow 20sccm, and to keep the indoor working vacuum degree of vacuum coating be 50 Pa, opens a pair of intermediate frequency shielding power supply with aluminium target sputter cathode, power 10 kW; Open simultaneously grid bias power supply, grid bias power supply is the high-frequency impulse grid bias power supply, voltage 50V, and frequency 20kHz, duty ratio 90% replaces, and the substrate deposition temperature remains on 20 ℃, and sedimentation time 2 minutes, deposit thickness are 200 nm; Described transition zone is non-conductive structure, and thermal conductivity is good, adopts this transition zone not only can be so that have good caking property between described withstand voltage ceramic layer and the described thermal conductive ceramic layer, and can also further improve the thermal conductivity of described system.And the step of described AlN highly heat-conductive carbon/ceramic enamel coating adopts following technique, and its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 420-450 ℃, operating pressure is 1200Pa, wherein AlCl
3Flow be 50 ml/min, NH
3Flow be 15-35 ml/min, N
2Flow be 15-20 ml/min, H
2Flow be 500 ml/min, film thickness is 200 μ m.The structure that obtains by this embodiment breakdown voltage resistant greater than 5.0kV, the thermal conductivity of described ceramic coating is greater than 100 W/mK.The described structure of the present embodiment can be used for electronic devices such as the optics of LED etc. or wiring board, and can be on single metal substrate a plurality of optics of intensive laying and/or electronic device, and needn't worry heat conduction and conductivity between described a plurality of optics and/or the electronic device.
Embodiment 2
As shown in Figure 2, the described many ceramic layers pattern structure substrate for optics and electronic device of the present embodiment comprises aluminum or aluminum alloy matrix 10, and is formed with successively the withstand voltage ceramic layer 20 of SiC and AlN highly heat-conductive carbon/ceramic enamel coating 40 on described metallic matrix; Described SiC is withstand voltage to have aluminium transition zone 30 between ceramic layer 20 and the AlN highly heat-conductive carbon/ceramic enamel coating 40, is provided with active soldering layer 60 between the withstand voltage ceramic layer 20 of described alloy matrix aluminum 10 and described SiC; And by mask described AlN highly heat-conductive carbon/ceramic enamel coating 40 and aluminium transition zone 30 are carried out selective etch and form a plurality of isolation pedestals 50; And form metallic circuit layer (not shown) in the described many ceramic layers of the described isolation pedestal the superiors.The withstand voltage ceramic layer of described SiC prepares by powder sintering, and the withstand voltage ceramic layer thickness of SiC is 200 μ m.Wherein, the step of described transition zone adopts following technique: suction to 5.0 * 10
-4Pa is 99.99% Ar to the indoor purity that passes into of vacuum coating, flow 20sccm, and to keep the indoor working vacuum degree of vacuum coating be 50 Pa, opens a pair of intermediate frequency shielding power supply with aluminium target sputter cathode, power 10 kW; Open simultaneously grid bias power supply, grid bias power supply is the high-frequency impulse grid bias power supply, voltage 50V, and frequency 20kHz, duty ratio 90% replaces, and the substrate deposition temperature remains on 20 ℃, and sedimentation time 2 minutes, deposit thickness are 200 nm; Described transition zone is non-conductive structure, and thermal conductivity is good, adopts this transition zone not only can be so that have good caking property between described withstand voltage ceramic layer and the described thermal conductive ceramic layer, and can also further improve the thermal conductivity of described system.And the step of described AlN highly heat-conductive carbon/ceramic enamel coating adopts following technique, and its reaction system is AlCl
3-NH
3-N
2-H
2, reaction temperature is 420-450 ℃, operating pressure is 1200Pa, wherein AlCl
3Flow be 50 ml/min, NH
3Flow be 15-35 ml/min, N
2Flow be 15-20 ml/min, H
2Flow be 500 ml/min, film thickness is 200 μ m.And described active soldering adopts above-mentioned water fog method to prepare, and contains the B of Ce, 0.1wt% of Ni, 0.5wt% of Mn, 1.8wt% of Al, 0.65wt% of Sn, 2.7 wt% of Si, 7.2 wt% of Ti, 1.5 wt% of In, 2.1 wt% of Ag, 0.8 wt% of 0.5wt% and the Cu of surplus in the solder that uses.The structure that obtains by this embodiment breakdown voltage resistant greater than 5.0kV, the thermal conductivity of described ceramic coating is greater than 100 W/mK.The described structure of the present embodiment can be used for electronic devices such as the optics of LED etc. or wiring board, and can be on single metal substrate a plurality of optics of intensive laying and/or electronic device, and needn't worry heat conduction and conductivity between described a plurality of optics and/or the electronic device.
For the ordinary skill in the art, be to be understood that and do not breaking away from the scope disclosed by the invention, can adopt to be equal to and replace or equivalent transformation form enforcement above-described embodiment.Protection scope of the present invention is not limited to the specific embodiment of embodiment part, and the execution mode as long as no breaking away from invention essence all is interpreted as having dropped within the protection range of requirement of the present invention.